Akash Levy

All Publications

• 3-D coarse-grained reconfigurable array using multi-pole NEM relays for programmable routing INTEGRATION-THE VLSI JOURNAL Levy, A., Oduoza, M., Balasingam, A., Howe, R. T., Raina, P. 2023; 88: 249-261

  View details for DOI 10.1016/j.vlsi.2022.10.001

  View details for Web of Science ID 000882493600001

• Preparing Precollege Students for the Second Quantum Revolution with Core Concepts in Quantum Information Science PHYSICS TEACHER Singh, C., Levy, A., Levy, J. 2022; 60 (8): 639-641

  View details for DOI 10.1119/5.0027661

  View details for Web of Science ID 000878779300006

• SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge IEEE TRANSACTIONS ON ELECTRON DEVICES Li, H., Chen, W., Levy, A., Wang, C., Wang, H., Chen, P., Wan, W., Khwa, W., Chuang, H., Chih, Y., Chang, M., Wong, H., Raina, P. 2021; 68 (12): 6637-6643

  View details for DOI 10.1109/TED.2021.3110464

  View details for Web of Science ID 000724501000107

• RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays IEEE TRANSACTIONS ON ELECTRON DEVICES Le, B. Q., Levy, A., Wu, T. F., Radway, R. M., Hsieh, E., Zheng, X., Nelson, M., Raina, P., Wong, H., Wong, S., Mitra, S. 2021; 68 (9): 4397-4403

  View details for DOI 10.1109/TED.2021.3097975

  View details for Web of Science ID 000686761500038

• Monte Carlo Simulation of a Three-Terminal RRAM with Applications to Neuromorphic Computing Balasingam, A., Levy, A., Li, H., Raina, P., IEEE IEEE. 2020: 197–99

  View details for Web of Science ID 000636981000050

• Writing and Low-Temperature Characterization of Oxide Nanostructures JOVE-JOURNAL OF VISUALIZED EXPERIMENTS Levy, A., Bi, F., Huang, M., Lu, S., Tomczyk, M., Cheng, G., Irvin, P., Levy, J. 2014

  Abstract

  Oxide nanoelectronics is a rapidly growing field which seeks to develop novel materials with multifunctional behavior at nanoscale dimensions. Oxide interfaces exhibit a wide range of properties that can be controlled include conduction, piezoelectric behavior, ferromagnetism, superconductivity and nonlinear optical properties. Recently, methods for controlling these properties at extreme nanoscale dimensions have been discovered and developed. Here are described explicit step-by-step procedures for creating LaAlO3/SrTiO3 nanostructures using a reversible conductive atomic force microscopy technique. The processing steps for creating electrical contacts to the LaAlO3/SrTiO3 interface are first described. Conductive nanostructures are created by applying voltages to a conductive atomic force microscope tip and locally switching the LaAlO3/SrTiO3 interface to a conductive state. A versatile nanolithography toolkit has been developed expressly for the purpose of controlling the atomic force microscope (AFM) tip path and voltage. Then, these nanostructures are placed in a cryostat and transport measurements are performed. The procedures described here should be useful to others wishing to conduct research in oxide nanoelectronics.

  View details for DOI 10.3791/51886

  View details for Web of Science ID 000349296100080

  View details for PubMedID 25080268

  View details for PubMedCentralID PMC4220744