All Publications


  • Thermal transport in MoS2 from molecular dynamics using different empirical potentials PHYSICAL REVIEW B Xu, K., Gabourie, A. J., Hashemi, A., Fan, Z., Wei, N., Farimani, A., Komsa, H., Krasheninnikov, A., Pop, E., Ala-Nissila, T. 2019; 99 (5)
  • Reduction of hysteresis in MoS2 transistors using pulsed voltage measurements 2D MATERIALS Datye, I. M., Gabourie, A. J., English, C. D., Smithe, K. H., McClellan, C. J., Wang, N. C., Pop, E. 2019; 6 (1)
  • Electronics. Nano letters Yalon, E., McClellan, C. J., Smithe, K. K., Muñoz Rojo, M., Xu, R. L., Suryavanshi, S. V., Gabourie, A. J., Neumann, C. M., Xiong, F., Farimani, A. B., Pop, E. 2017

    Abstract

    The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or multilayered processors, both being critical thermal bottlenecks. To shed light into fundamental aspects of this problem, here we report the first direct measurement of spatially resolved temperature in functioning 2D monolayer MoS2 transistors. Using Raman thermometry, we simultaneously obtain temperature maps of the device channel and its substrate. This differential measurement reveals the thermal boundary conductance of the MoS2 interface with SiO2 (14 ± 4 MW m(-2) K(-1)) is an order magnitude larger than previously thought, yet near the low end of known solid-solid interfaces. Our study also reveals unexpected insight into nonuniformities of the MoS2 transistors (small bilayer regions) which do not cause significant self-heating, suggesting that such semiconductors are less sensitive to inhomogeneity than expected. These results provide key insights into energy dissipation of 2D semiconductors and pave the way for the future design of energy-efficient 2D electronics.

    View details for DOI 10.1021/acs.nanolett.7b00252

    View details for PubMedID 28388845

  • Electronic, Thermal, and Unconventional Applications of 2D Materials Pop, E., Yalon, E., Munoz-Rojo, M., Mleczko, M., English, C., Wang, N., Smithe, K., Suryavanshi, S., Datye, I., McClellan, C., Gabourie, A., IEEE IEEE. 2017: 916–17
  • Thermal Boundary Conductance of the MoS2-SiO2 Interface Suryavanshi, S. V., Gabourie, A. J., Farimani, A., Yalon, E., Pop, E., IEEE IEEE. 2017: 26–29
  • Electrons. Phonons, and Unconventional Applications of 2D Materials Pop, E., Yalon, E., Munoz-Rojo, M., Mleczko, M., English, C., Wang, N., Smithe, K., Suryavanshi, S., Datye, I., McClellan, C., Gabourie, A., IEEE IEEE. 2017