Professional Education


  • Ph.D, Indian Institute of Science (IISc), Bangalore, GaN Power Device Reliability (2019)
  • M.E, Birla Institute of Technology and Science (BITS), Pilani, Power Electronics and Drives (2013)
  • B.E, Jai Narain Vyas University, Jodhpur, Electronics Engineering (2011)

Stanford Advisors


Current Research and Scholarly Interests


GaN Based Power Devices And Circuits

Lab Affiliations


All Publications


  • Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Raghavan, S., Shrivastava, M. 2020; 67 (4): 1567–74
  • Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY Shankar, B., Shikha, S., Singh, A., Kumar, J., Soni, A., Gupta, S. D., Raghavan, S., Shrivastava, M. 2020; 20 (3): 562-569
  • Electro-Thermo-Mechanical Reliability of Recessed Barrier AlGaN/GaN Schottky Diodes Under Pulse Switching Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Soni, A., Shrivastava, M. 2020; 67 (5): 2044-2051

    View details for DOI 10.1109/TED.2020.2981568

  • Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Shrivastava, M. 2019; 66 (10): 4140–47
  • ESD Reliability of AlGaN/GaN HEMT Technology IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Raghavan, S., Shrivastava, M. 2019; 66 (9): 3756–63
  • First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Soni, A., Chandrasekar, H., Raghavan, S., Shrivastava, M. 2019; 66 (8): 3433–40
  • ESD Behavior of AlGaN/GaN Schottky Diodes IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY Shankar, B., Gupta, S., Soni, A., Raghavan, S., Shrivastava, M. 2019; 19 (2): 437–44
  • Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering IEEE TRANSACTIONS ON ELECTRON DEVICES Gupta, S., Soni, A., Joshi, V., Kumar, J., Sengupta, R., Khand, H., Shankar, B., Mohan, N., Raghavan, S., Bhat, N., Shrivastava, M. 2019; 66 (6): 2544–50
  • UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities Gupta, S., Joshi, V., Shankar, B., Shikha, S., Raghavan, S., Shrivastava, M., IEEE IEEE. 2019
  • On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs Shankar, B., Soni, A., Gupta, S., Sengupta, R., Khand, H., Mohan, N., Raghavan, S., Shrivastava, M., IEEE IEEE. 2018
  • Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs Shankar, B., Soni, A., Gupta, S., Shrivastava, M., IEEE IEEE. 2018
  • Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Shankar, B., Singh, R., Sengupta, R., Khand, H., Soni, A., Gupta, S. D., Raghavan, S., Gossner, H., Shrivastava, M. IEEE. 2018: 1–6
  • (Invited) Design and Reliability of GaN Power HEMT Technology Americas International Meeting on Electrochemistry and Solid State Science Shankar, B., Soni, A., Gupta, S. D., Sengupta, R., Khand, H., Mohan, N., Raghavan, S., Bhat, N., Shrivastava, M. 2018: 1–2

    View details for DOI 10.1149/ma2018-02/16/713

  • What All We Understand About SOA Reliability of GaN HEMT GaN Marathon 2.0 Shankar, B., Soni, A., Gupta, S. D., Shrivastava, M. University of Padua. 2018: 1
  • Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs Shankar, B., Soni, A., Singh, M., Soman, R., Chandrasekar, H., Mohan, N., Mohta, N., Ramesh, N., Prabhu, S., Kulkarni, A., Nath, D., Muralidharan, R., Bhat, K. N., Raghavan, S., Bhat, N., Shrivastava, M., IEEE IEEE. 2017
  • Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs Joshi, V., Shankar, B., Tiwari, S., Shrivastava, M., IEEE IEEE. 2017: 109–12
  • ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis Shankar, B., Soni, A., Singh, M., Soman, R., Bhat, K. N., Raghavan, S., Bhat, N., Shrivastava, M., IEEE IEEE. 2017: 361–65
  • On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism Shankar, B., Sengupta, R., Gupta, S., Soni, A., Mohan, N., Bhat, N., Raghavan, S., Shrivastava, M., IEEE IEEE. 2017
  • High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode INTERNATIONAL JOURNAL OF ELECTRONICS Shankar, B., Gupta, S. K., Taube, W. R., Akhtar, J. 2016; 103 (12): 2064–74
  • Unique ESD Behavior and Failure Modes of AlGaN/GaN HEMTs Shankar, B., Shrivastava, M., IEEE IEEE. 2016
  • Capacitance-conductance spectroscopic investigation of interfacial oxide layer in Ni/4H-SiC (0001) Schottky diode PHYSICA B-CONDENSED MATTER Gupta, S. K., Shankar, B., Taube, W. R., Singh, J., Akhtar, J. 2014; 434: 44–50
  • Dependence of Field Plate Parameters on Dielectric Constant in a 4H-SiC Schottky Diode Shankar, B., Gupta, S. K., Taube, W. R., Akhtar, J., IEEE IEEE. 2014
  • A Quick Method to Realize and Characterize Bimorph Cantilevers Prajesh, R., Shankar, B., Jain, N., Agarwal, A., Prajesh, R., Agarwal, A., IEEE IEEE. 2014