Bhawani Shankar

All Publications

• A discussion on various experimental methods of impact ionization coefficient measurement in GaN AIP ADVANCES Ji, D., Zeng, K., Bian, Z., Shankar, B., Gunning, B. P., Binder, A., Dickerson, J. R., Aktas, O., Anderson, T. J., Kaplar, R. J., Chowdhury, S. 2022; 12 (3)

  View details for DOI 10.1063/5.0083111

  View details for Web of Science ID 000772898200002

• Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization Shankar, B., Bian, Z., Zeng, K., Meng, C., Martinez, R., Chowdhury, S., Gunning, B., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., IEEE IEEE. 2022

  View details for DOI 10.1109/IRPS48227.2022.9764525

  View details for Web of Science ID 000922926400099

• Best Practices to Quantify Linearity Performance of GaN HEMTs for Power Amplifier Applications Martinez, R., Munzer, D. J., Zhou, X., Shankar, B., Schmidt, E., Wildnauer, K., Wu, B., Murmann, B., Chowdhury, S., IEEE IEEE. 2021: 85-89

  View details for DOI 10.1109/WiPDA49284.2021.9645120

  View details for Web of Science ID 000787172500017

• Design of Ka-Band Doherty Power Amplifier Using 0.15 mu m GaN on SiC Process Based on Novel Complex Load Modulation Zhou, X., Chowdhury, S., Martinez, R., Shankar, B., IEEE IEEE. 2021: 259-262

  View details for DOI 10.1109/WiPDA49284.2021.9645125

  View details for Web of Science ID 000787172500049

• On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress Shankar, B., Zeng, K., Gunning, B., Lee, K., Martinez, R., Meng, C., Zhou, X., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., Chowdhury, S., IEEE IEEE. 2021: 40-43

  View details for DOI 10.1109/WiPDA49284.2021.9645154

  View details for Web of Science ID 000787172500009

• Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Raghavan, S., Shrivastava, M. 2020; 67 (4): 1567–74

  View details for DOI 10.1109/TED.2020.2974508

  View details for Web of Science ID 000522559000027

• Time Dependent Shift in SOA Boundary and Early Breakdown of Epi-Stack in AlGaN/ GaN HEMTs Under Fast Cyclic Transient Stress IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY Shankar, B., Shikha, S., Singh, A., Kumar, J., Soni, A., Gupta, S. D., Raghavan, S., Shrivastava, M. 2020; 20 (3): 562-569

  View details for DOI 10.1109/TDMR.2020.3007128

• Electro-Thermo-Mechanical Reliability of Recessed Barrier AlGaN/GaN Schottky Diodes Under Pulse Switching Conditions IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Soni, A., Shrivastava, M. 2020; 67 (5): 2044-2051

  View details for DOI 10.1109/TED.2020.2981568

• Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Shrivastava, M. 2019; 66 (10): 4140–47

  View details for DOI 10.1109/TED.2019.2933362

  View details for Web of Science ID 000487477600004

• ESD Reliability of AlGaN/GaN HEMT Technology IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Raghavan, S., Shrivastava, M. 2019; 66 (9): 3756–63

  View details for DOI 10.1109/TED.2019.2926781

  View details for Web of Science ID 000482583200008

• First Observations on the Trap-Induced Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs IEEE TRANSACTIONS ON ELECTRON DEVICES Shankar, B., Soni, A., Chandrasekar, H., Raghavan, S., Shrivastava, M. 2019; 66 (8): 3433–40

  View details for DOI 10.1109/TED.2019.2919491

  View details for Web of Science ID 000477697400029

• ESD Behavior of AlGaN/GaN Schottky Diodes IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY Shankar, B., Gupta, S., Soni, A., Raghavan, S., Shrivastava, M. 2019; 19 (2): 437–44

  View details for DOI 10.1109/TDMR.2019.2916846

  View details for Web of Science ID 000471007800027

• Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By AlxTi1-xO Based Gate Stack Engineering IEEE TRANSACTIONS ON ELECTRON DEVICES Gupta, S., Soni, A., Joshi, V., Kumar, J., Sengupta, R., Khand, H., Shankar, B., Mohan, N., Raghavan, S., Bhat, N., Shrivastava, M. 2019; 66 (6): 2544–50

  View details for DOI 10.1109/TED.2019.2908960

  View details for Web of Science ID 000468228100012

• UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities Gupta, S., Joshi, V., Shankar, B., Shikha, S., Raghavan, S., Shrivastava, M., IEEE IEEE. 2019

  View details for Web of Science ID 000474762500156

• On the Trap Assisted Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs Shankar, B., Soni, A., Gupta, S., Sengupta, R., Khand, H., Mohan, N., Raghavan, S., Shrivastava, M., IEEE IEEE. 2018

  View details for Web of Science ID 000468959600057

• Safe Operating Area (SOA) Reliability of Polarization Super Junction (PSJ) GaN FETs Shankar, B., Soni, A., Gupta, S., Shrivastava, M., IEEE IEEE. 2018

  View details for Web of Science ID 000468959600056

• Trap Assisted Stress Induced ESD Reliability of GaN Schottky Diodes 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Shankar, B., Singh, R., Sengupta, R., Khand, H., Soni, A., Gupta, S. D., Raghavan, S., Gossner, H., Shrivastava, M. IEEE. 2018: 1–6

  View details for DOI 10.23919/EOS/ESD.2018.8509745

• (Invited) Design and Reliability of GaN Power HEMT Technology Americas International Meeting on Electrochemistry and Solid State Science Shankar, B., Soni, A., Gupta, S. D., Sengupta, R., Khand, H., Mohan, N., Raghavan, S., Bhat, N., Shrivastava, M. 2018: 1–2

  View details for DOI 10.1149/ma2018-02/16/713

• What All We Understand About SOA Reliability of GaN HEMT GaN Marathon 2.0 Shankar, B., Soni, A., Gupta, S. D., Shrivastava, M. University of Padua. 2018: 1
• Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs Under Fast Cyclic Transient Stress IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) Shankar, B., Soni, A., Gupta, S. D., Shikha, S., Singh, S., Raghavan, S., Shrivastava, M. 2018: 34.6.1–34.6.4

  View details for DOI 10.1109/IEDM.2018.8614690

• Trap Assisted Avalanche Instability and Safe Operating Area Concerns in AlGaN/GaN HEMTs Shankar, B., Soni, A., Singh, M., Soman, R., Chandrasekar, H., Mohan, N., Mohta, N., Ramesh, N., Prabhu, S., Kulkarni, A., Nath, D., Muralidharan, R., Bhat, K. N., Raghavan, S., Bhat, N., Shrivastava, M., IEEE IEEE. 2017

  View details for Web of Science ID 000416068500162

• Dependence of Avalanche Breakdown on Surface & Buffer Traps in AlGaN/GaN HEMTs Joshi, V., Shankar, B., Tiwari, S., Shrivastava, M., IEEE IEEE. 2017: 109–12

  View details for Web of Science ID 000426983300028

• ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis Shankar, B., Soni, A., Singh, M., Soman, R., Bhat, K. N., Raghavan, S., Bhat, N., Shrivastava, M., IEEE IEEE. 2017: 361–65

  View details for DOI 10.1109/VLSID.2017.57

  View details for Web of Science ID 000403391200055

• On the ESD Behavior of AlGaN/GaN Schottky Diodes and Trap Assisted Failure Mechanism Shankar, B., Sengupta, R., Gupta, S., Soni, A., Mohan, N., Bhat, N., Raghavan, S., Shrivastava, M., IEEE IEEE. 2017

  View details for Web of Science ID 000427261500010

• High-k dielectrics based field plate edge termination engineering in 4H-SiC Schottky diode INTERNATIONAL JOURNAL OF ELECTRONICS Shankar, B., Gupta, S. K., Taube, W. R., Akhtar, J. 2016; 103 (12): 2064–74

  View details for DOI 10.1080/00207217.2016.1178340

  View details for Web of Science ID 000384310200009

• Unique ESD Behavior and Failure Modes of AlGaN/GaN HEMTs Shankar, B., Shrivastava, M., IEEE IEEE. 2016

  View details for Web of Science ID 000387121900105

• Capacitance-conductance spectroscopic investigation of interfacial oxide layer in Ni/4H-SiC (0001) Schottky diode PHYSICA B-CONDENSED MATTER Gupta, S. K., Shankar, B., Taube, W. R., Singh, J., Akhtar, J. 2014; 434: 44–50

  View details for DOI 10.1016/j.physb.2013.10.042

  View details for Web of Science ID 000329116900008

• Dependence of Field Plate Parameters on Dielectric Constant in a 4H-SiC Schottky Diode Shankar, B., Gupta, S. K., Taube, W. R., Akhtar, J., IEEE IEEE. 2014

  View details for Web of Science ID 000410587300028

• A Quick Method to Realize and Characterize Bimorph Cantilevers Prajesh, R., Shankar, B., Jain, N., Agarwal, A., Prajesh, R., Agarwal, A., IEEE IEEE. 2014

  View details for Web of Science ID 000410587300012