Boris Murmann

All Publications

• A 0.6-1.8-mW 3.4-dB NF Mixer-First Receiver With an N-Path Harmonic-Rejection Transformer-Mixer IEEE JOURNAL OF SOLID-STATE CIRCUITS Weinreich, S., Murmann, B. 2023; 58 (6): 1508-1518

  View details for DOI 10.1109/JSSC.2022.3214226

  View details for Web of Science ID 000995902800002

• Low-voltage polymer transistors on hydrophobic dielectrics and surfaces JOURNAL OF PHYSICS-MATERIALS Kraft, U., Nikolka, M., Wang, G., Kim, Y., Pfattner, R., Alsufyani, M., McCulloch, I., Murmann, B., Bao, Z. 2023; 6 (2)

  View details for DOI 10.1088/2515-7639/acb7a1

  View details for Web of Science ID 000942472000001

• Linearity Performance of Derivative Superposition in GaN HEMTs: A Device-to-Circuit Perspective IEEE TRANSACTIONS ON ELECTRON DEVICES Martinez, R., Munzer, D. J., Shankar, B., Murmann, B., Chowdhury, S. 2023

  View details for DOI 10.1109/TED.2023.3259383

  View details for Web of Science ID 000967103700001

• Tailoring electrode surface charge to achieve discrimination and quantification of chemically similar small molecules with electrochemical aptamers. Advanced functional materials Kesler, V., Fu, K., Chen, Y., Park, C. H., Eisenstein, M., Murmann, B., Soh, H. T. 2023; 33 (1)

  Abstract

  Electrochemical biosensors based on structure-switching aptamers offer many advantages because they can operate directly in complex samples and offer the potential to integrate with miniaturized electronics. Unfortunately, these biosensors often suffer from cross-reactivity problems when measuring a target in samples containing other chemically similar molecules, such as precursors or metabolites. While some progress has been made in selecting highly specific aptamers, the discovery of these reagents remains slow and costly. In this work, we demonstrate a novel strategy to distinguish molecules with miniscule difference in chemical composition (such as a single hydroxyl group) - with cross reactive aptamer probes - by tuning the charge state of the surface on which the aptamer probes are immobilized. As an exemplar, we show that our strategy can distinguish between DOX and many structurally similar analytes, including its primary metabolite doxorubicinol (DOXol). We then demonstrate the ability to accurately quantify mixtures of these two molecules based on their differential response to sensors with different surface-charge properties. We believe this methodology is general and can be extended to a broad range of applications.

  View details for DOI 10.1002/adfm.202208534

  View details for PubMedID 36819738

  View details for PubMedCentralID PMC9937077

• High-Linearity High-Bandwidth (> 20 GHz) T&H Front Ends Using Active Bootstrapping and Heterogeneous SiGe/CMOS Circuit Co-Design Ramkaj, A., Perrott, M., Haroun, B., Murmann, B., IEEE IEEE. 2023

  View details for DOI 10.1109/ISCAS46773.2023.10181490

  View details for Web of Science ID 001038214600121

• Testbench on a Chip: A Yield Test Vehicle for Resistive Memory Devices Upton, L. R., Lallement, G., Scott, M. D., Taylor, J., Radway, R. M., Rich, D., Nelson, M., Mitra, S., Murmann, B., IEEE IEEE. 2023: 576-582

  View details for DOI 10.1109/ISQED57927.2023.10129298

  View details for Web of Science ID 001013619400081

• Capturing Layout Dependent Effects in MOSFET Circuit Sizing Using Precomputed Lookup Tables IEEE ACCESS Mohamed, K., Yasseen, K. Y., Murmann, B., Omran, H. 2023; 11: 41205-41217

  View details for DOI 10.1109/ACCESS.2023.3270106

  View details for Web of Science ID 000981878900001

• Tailoring Electrode Surface Charge to Achieve Discrimination and Quantification of Chemically Similar Small Molecules with Electrochemical Aptamers ADVANCED FUNCTIONAL MATERIALS Kesler, V., Fu, K., Chen, Y., Park, C., Eisenstein, M., Murmann, B., Soh, H. 2022

  View details for DOI 10.1002/adfm.202208534

  View details for Web of Science ID 000862066000001

• Fair and Comprehensive Benchmarking of Machine Learning Processing Chips IEEE DESIGN & TEST Burr, G. W., Lim, S., Murmann, B., Venkatesan, R., Verhelst, M. 2022; 39 (3): 18-27

  View details for DOI 10.1109/MDAT.2021.3063366

  View details for Web of Science ID 000803107400007

• CHIMERA: A 0.92-TOPS, 2.2-TOPS/W Edge AI Accelerator With 2-MByte On-Chip Foundry Resistive RAM for Efficient Training and Inference IEEE JOURNAL OF SOLID-STATE CIRCUITS Prabhu, K., Gural, A., Khan, Z. F., Radway, R. M., Giordano, M., Koul, K., Doshi, R., Kustin, J. W., Liu, T., Lopes, G. B., Turbiner, V., Khwa, W., Chih, Y., Chang, M., Lallement, G., Murmann, B., Mitra, S., Raina, P. 2022

  View details for DOI 10.1109/JSSC.2022.3140753

  View details for Web of Science ID 000750226200001

• A Single-Transistor Amplifier With Back-Gate Feedback in 22-nm FD-SOI IEEE SOLID-STATE CIRCUITS LETTERS Weinreich, S., Murmann, B. 2022; 5: 210-213

  View details for DOI 10.1109/LSSC.2022.3198547

  View details for Web of Science ID 000852211100002

• Adaptive Beamforming for Wireless Powering of a Network of Ultrasonic Implants Wang, M. L., Singhvi, A., Nyikayaramba, G., Murmann, B., Arbabian, A., IEEE IEEE. 2022

  View details for DOI 10.1109/IUS54386.2022.9958008

  View details for Web of Science ID 000896080400284

• A 56 GS/s 8-bit 0.011 mm(2) 4x Delta-Interleaved Switched-Capacitor DAC in 16 nm FinFET CMOS Caragiulo, P., Ramkaj, A., Arbabian, A., Murmann, B., IEEE IEEE. 2022: 329-332

  View details for DOI 10.1109/ESSCIRC55480.2022.9911426

  View details for Web of Science ID 000886608500078

• Analog and Mixed-Signal Layout Automation Using Digital Place-and-Route Tools IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS Wei, P., Murmann, B. 2021; 29 (11): 1838-1849

  View details for DOI 10.1109/TVLSI.2021.3105028

  View details for Web of Science ID 000712564000006

• Accelerated Electron Transfer in Nanostructured Electrodes Improves the Sensitivity of Electrochemical Biosensors. Advanced science (Weinheim, Baden-Wurttemberg, Germany) Fu, K., Seo, J., Kesler, V., Maganzini, N., Wilson, B. D., Eisenstein, M., Murmann, B., Soh, H. T. 2021: e2102495

  Abstract

  Electrochemical biosensors hold the exciting potential to integrate molecular detection with signal processing and wireless communication in a miniaturized, low-cost system. However, as electrochemical biosensors are miniaturized to the micrometer scale, their signal-to-noise ratio degrades and reduces their utility for molecular diagnostics. Studies have reported that nanostructured electrodes can improve electrochemical biosensor signals, but since the underlying mechanism remains poorly understood, it remains difficult to fully exploit this phenomenon to improve biosensor performance. In this work, electrochemical aptamer biosensors on nanoporous electrode are optimized to achieve improved sensitivity by tuning pore size, probe density, and electrochemical measurement parameters. Further, a novel mechanism in which electron transfer is physically accelerated within nanostructured electrodes due to reduced charge screening, resulting in enhanced sensitivity is proposed and experimentally validated. In concert with the increased surface areas achieved with this platform, this newly identified effect can yield an up to 24-fold increase in signal level and nearly fourfold lower limit of detection relative to planar electrodes with the same footprint. Importantly, this strategy can be generalized to virtually any electrochemical aptamer sensor, enabling sensitive detection in applications where miniaturization is a necessity, and should likewise prove broadly applicable for improving electrochemical biosensor performance in general.

  View details for DOI 10.1002/advs.202102495

  View details for PubMedID 34668339

• A 2x Time-Interleaved 28-GS/s 8-Bit 0.03-mm(2) Switched-Capacitor DAC in 16-nm FinFET CMOS IEEE JOURNAL OF SOLID-STATE CIRCUITS Caragiulo, P., Mattia, O., Arbabian, A., Murmann, B. 2021; 56 (8): 2335-2346

  View details for DOI 10.1109/JSSC.2021.3057608

  View details for Web of Science ID 000678340400004

• Single-chip mixer-based subarray beamformer for sub-Nyquist sampling in ultrasound imaging JAPANESE JOURNAL OF APPLIED PHYSICS Kanemoto, D., Spaulding, J., Murmann, B. 2021; 60 (SB)

  View details for DOI 10.35848/1347-4065/abec8b

  View details for Web of Science ID 000644137500001

• An 800 nW Switched-Capacitor Feature Extraction Filterbank for Sound Classification IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Villamizar, D., Muratore, D., Wieser, J. B., Murmann, B. 2021; 68 (4): 1578–88

  View details for DOI 10.1109/TCSI.2020.3047035

  View details for Web of Science ID 000626527600018

• A 7-bit 2 GS/s Time-Interleaved SAR ADC With Timing Skew Calibration Based on Current Integrating Sampler IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Jiang, W., Zhu, Y., Chan, C., Murmann, B., Martins, R. 2021; 68 (2): 557–68

  View details for DOI 10.1109/TCSI.2020.3039252

  View details for Web of Science ID 000608691300001

• Mixed-Signal Computing for Deep Neural Network Inference IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS Murmann, B. 2021; 29 (1): 3–13

  View details for DOI 10.1109/TVLSI.2020.3020286

  View details for Web of Science ID 000616308800002

• TinyML: Current Progress, Research Challenges, and Future Roadmap Shafique, M., Theocharides, T., Reddy, V., Murmann, B., IEEE IEEE. 2021: 1303-1306

  View details for DOI 10.1109/DAC18074.2021.9586232

  View details for Web of Science ID 000766079700219

• A 4-bit Mixed-Signal MAC Array with Swing Enhancement and Local Kernel Memory Yu, W., Giordano, M., Doshi, R., Zhang, M., Mak, P., Martins, R. P., Murmann, B., IEEE IEEE. 2021: 326-329

  View details for DOI 10.1109/MWSCAS47672.2021.9531769

  View details for Web of Science ID 000784758700077

• Best Practices to Quantify Linearity Performance of GaN HEMTs for Power Amplifier Applications Martinez, R., Munzer, D. J., Zhou, X., Shankar, B., Schmidt, E., Wildnauer, K., Wu, B., Murmann, B., Chowdhury, S., IEEE IEEE. 2021: 85-89

  View details for DOI 10.1109/WiPDA49284.2021.9645120

  View details for Web of Science ID 000787172500017

• Going beyond the Debye Length: Overcoming Charge Screening Limitations in Next-Generation Bioelectronic Sensors. ACS nano Kesler, V., Murmann, B., Soh, H. T. 2020

  Abstract

  Electronic biosensors are a natural fit for field-deployable diagnostic devices because they can be miniaturized, mass produced, and integrated with circuitry. Unfortunately, progress in the development of such platforms has been hindered by the fact that mobile ions present in biological samples screen charges from the target molecule, greatly reducing sensor sensitivity. Under physiological conditions, the thickness of the resulting electric double layer is less than 1 nm, and it has generally been assumed that electronic detection beyond this distance is virtually impossible. However, a few recently described sensor design strategies seem to defy this conventional wisdom, exploiting the physics of electrical double layers in ways that traditional models do not capture. In the first strategy, charge screening is decreased by constraining the space in which double layers can form. The second strategy uses external stimuli to prevent double layers from reaching equilibrium, thereby effectively reducing charge screening. In this Perspective, we describe these relatively new concepts and offer theoretical insights into mechanisms that may enable electronic biosensing beyond the Debye length. If these concepts can be further developed and translated into practical electronic biosensors, we foresee exciting opportunities for the next generation of diagnostic technologies.

  View details for DOI 10.1021/acsnano.0c08622

  View details for PubMedID 33226776

• Stability of Gated Recurrent Unit Neural Networks: Convex Combination Formulation Approach JOURNAL OF OPTIMIZATION THEORY AND APPLICATIONS Stipanovic, D. M., Kapetina, M. N., Rapaic, M. R., Murmann, B. 2020

  View details for DOI 10.1007/s10957-020-01776-w

  View details for Web of Science ID 000587127400001

• Power-saving design opportunities for wireless intracortical brain-computer interfaces. Nature biomedical engineering Even-Chen, N., Muratore, D. G., Stavisky, S. D., Hochberg, L. R., Henderson, J. M., Murmann, B., Shenoy, K. V. 2020

  Abstract

  The efficacy of wireless intracortical brain-computer interfaces (iBCIs) is limited in part by the number of recording channels, which is constrained by the power budget of the implantable system. Designing wireless iBCIs that provide the high-quality recordings of today's wired neural interfaces may lead to inadvertent over-design at the expense of power consumption and scalability. Here, we report analyses of neural signals collected from experimental iBCI measurements in rhesus macaques and from a clinical-trial participant with implanted 96-channel Utah multielectrode arrays to understand the trade-offs between signal quality and decoder performance. Moreover, we propose an efficient hardware design for clinically viable iBCIs, and suggest that the circuit design parameters of current recording iBCIs can be relaxed considerably without loss of performance. The proposed design may allow for an order-of-magnitude power savings and lead to clinically viable iBCIs with a higher channel count.

  View details for DOI 10.1038/s41551-020-0595-9

  View details for PubMedID 32747834

• S-Parameter-Based Defect Localization for Ultrasonic Guided Wave SHM AEROSPACE Nyikayaramba, G., Murmann, B. 2020; 7 (3)

  View details for DOI 10.3390/aerospace7030033

  View details for Web of Science ID 000523497600015

• Distortion Analysis of RC Integrators With Wideband Input Signals IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Hammler, N., Murmann, B. 2020; 67 (1): 12–22

  View details for DOI 10.1109/TCSI.2019.2946974

  View details for Web of Science ID 000508385000002

• Design Considerations for External Compensation Approaches to OLED Display Degradation Kwon, J., Lee, C., Chae, Y., Murmann, B., IEEE IEEE. 2020

  View details for Web of Science ID 000706854700398

• Sensory Particles with Optical Telemetry Ganesan, K., Flores, T. A., Le, B. Q., Muratore, D. G., Patel, N., Mitra, S., Murmann, B., Palanker, D., IEEE IEEE. 2020

  View details for Web of Science ID 000706854700088

• Separating the Effects of Batch Normalization on CNN Training Speed and Stability Using Classical Adaptive Filter Theory Chai, E., Pilanci, M., Murmann, B., Matthews, M. B. IEEE. 2020: 1214-1221

  View details for DOI 10.1109/IEEECONF51394.2020.9443275

  View details for Web of Science ID 000681731800234

• A 32 Gb/s PAM-4 Optical Transceiver with Active Back Termination in 40 nm CMOS Technology Ho, W., Hsieh, Y., Murmann, B., Chen, W., IEEE IEEE. 2020

  View details for Web of Science ID 000696570700096

• Implications of Finite Clock Transition Time for LPTV Circuit Analysis Weinreich, S., Muratore, D., Chae, Y., McKay, T., Murmann, B., IEEE IEEE. 2020

  View details for Web of Science ID 000696570700304

• Wearable System Design Using Intrinsically Stretchable Temperature Sensor Zhu, C., Schell, E., Kim, M., Bao, Z., Murmann, B., IEEE IEEE. 2020

  View details for Web of Science ID 000696570700112

• A 10-Gbps Continuous-Time Linear Equalizer for mm-Wave Dielectric Waveguide Communication IEEE SOLID-STATE CIRCUITS LETTERS Mattia, O. E., Sawaby, M., Zheng, K., Arbabian, A., Murmann, B. 2020; 3: 266-269

  View details for DOI 10.1109/LSSC.2020.3014859

  View details for Web of Science ID 000723378200068

• Analog IC Design Using Precomputed Lookup Tables: Challenges and Solutions IEEE ACCESS Youssef, A. A., Murmann, B., Omran, H. 2020; 8: 134640–52

  View details for DOI 10.1109/ACCESS.2020.3010875

  View details for Web of Science ID 000554361900001

• A Compact 14 GS/s 8-bit Switched-Capacitor DAC in 16 nm FinFET CMOS Caragiulo, P., Mattia, O., Arbabian, A., Murmann, B., IEEE IEEE. 2020

  View details for Web of Science ID 000621657500004

• Ink Development and Printing of Conducting Polymers for Intrinsically Stretchable Interconnects and Circuits ADVANCED ELECTRONIC MATERIALS Kraft, U., Molina-Lopez, F., Son, D., Bao, Z., Murmann, B. 2020; 6 (1)

  View details for DOI 10.1002/aelm.201900681

  View details for Web of Science ID 000507306800041

• A Data-Compressive Wired-OR Readout for Massively Parallel Neural Recording Muratore, D., Tandon, P., Wootters, M., Chichilnisky, E. J., Mitra, S., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2019: 1128–40

  Abstract

  Neural interfaces of the future will be used to help restore lost sensory, motor, and other capabilities. However, realizing this futuristic promise requires a major leap forward in how electronic devices interface with the nervous system. Next generation neural interfaces must support parallel recording from tens of thousands of electrodes within the form factor and power budget of a fully implanted device, posing a number of significant engineering challenges. In this paper, we exploit sparsity and diversity of neural signals to achieve simultaneous data compression and channel multiplexing for neural recordings. The architecture uses wired-OR interactions within an array of single-slope A/D converters to obtain massively parallel digitization of neural action potentials. The achieved compression is lossy but effective at retaining the critical samples belonging to action potentials, enabling efficient spike sorting and cell type identification. Simulation results of the architecture using data obtained from primate retina ex-vivo with a 512-channel electrode array show average compression rates up to  ∼ 40× while missing less than 5% of cells. In principle, the techniques presented here could be used to design interfaces to other parts of the nervous system.

  View details for DOI 10.1109/TBCAS.2019.2935468

  View details for Web of Science ID 000507321400002

  View details for PubMedID 31425051

• A Data-Compressive 1.5/2.75-bit Log-Gradient QVGA Image Sensor With Multi-Scale Readout for Always-On Object Detection IEEE JOURNAL OF SOLID-STATE CIRCUITS Young, C., Omid-Zohoor, A., Lajevardi, P., Murmann, B. 2019; 54 (11): 2932–46

  View details for DOI 10.1109/JSSC.2019.2937437

  View details for Web of Science ID 000493176300003

• Intrinsically Stretchable Temperature Sensor Based on Organic Thin-Film Transistors IEEE ELECTRON DEVICE LETTERS Zhu, C., Wu, H., Nyikayaramba, G., Bao, Z., Murmann, B. 2019; 40 (10): 1630–33

  View details for DOI 10.1109/LED.2019.2933838

  View details for Web of Science ID 000489740400016

• A Spectrum-Sensing DPD Feedback Receiver With 30x Reduction in ADC Acquisition Bandwidth and Sample Rate Hammler, N., Cathelin, A., Cathelin, P., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2019: 3340–51

  View details for DOI 10.1109/TCSI.2019.2920828

  View details for Web of Science ID 000484209900010

• Custom Sub-Systems and Circuits for Deep Learning: Guest Editorial Overview IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS Chen, C., Murmann, B., Seo, J., Yoo, H. 2019; 9 (2): 247–52

  View details for DOI 10.1109/JETCAS.2019.2918317

  View details for Web of Science ID 000471693500001

• Multi-scale ordering in highly stretchable polymer semiconducting films NATURE MATERIALS Xu, J., Wu, H., Zhu, C., Ehrlich, A., Shaw, L., Nikolka, M., Wang, S., Molina-Lopez, F., Gu, X., Luo, S., Zhou, D., Kim, Y., Wang, G., Gu, K., Feig, V., Chen, S., Kim, Y., Katsumata, T., Zheng, Y., Yan, H., Chung, J., Lopez, J., Murmann, B., Bao, Z. 2019; 18 (6): 594-+

  View details for DOI 10.1038/s41563-019-0340-5

  View details for Web of Science ID 000468511800018

• Multi-scale ordering in highly stretchable polymer semiconducting films. Nature materials Xu, J., Wu, H., Zhu, C., Ehrlich, A., Shaw, L., Nikolka, M., Wang, S., Molina-Lopez, F., Gu, X., Luo, S., Zhou, D., Kim, Y., Wang, G. N., Gu, K., Feig, V. R., Chen, S., Kim, Y., Katsumata, T., Zheng, Y., Yan, H., Chung, J. W., Lopez, J., Murmann, B., Bao, Z. 2019

  Abstract

  Stretchable semiconducting polymers have been developed as a key component to enable skin-like wearable electronics, but their electrical performance must be improved to enable more advanced functionalities. Here, we report a solution processing approach that can achieve multi-scale ordering and alignment of conjugated polymers in stretchable semiconductors to substantially improve their charge carrier mobility. Using solution shearing with a patterned microtrench coating blade, macroscale alignment of conjugated-polymer nanostructures was achieved along the charge transport direction. In conjunction, the nanoscale spatial confinement aligns chain conformation and promotes short-range pi-pi ordering, substantially reducing the energetic barrier for charge carrier transport. As a result, the mobilities of stretchable conjugated-polymer films have been enhanced up to threefold and maintained under a strain up to 100%. This method may also serve as the basis for large-area manufacturing of stretchable semiconducting films, as demonstrated by the roll-to-roll coating of metre-scale films.

  View details for PubMedID 30988452

• Global Asymptotic Stability and Stabilization of Long Short-Term Memory Neural Networks with Constant Weights and Biases JOURNAL OF OPTIMIZATION THEORY AND APPLICATIONS Deka, S. A., Stipanovic, D. M., Murmann, B., Tomlin, C. J. 2019; 181 (1): 231–43

  View details for DOI 10.1007/s10957-018-1447-6

  View details for Web of Science ID 000460754800012

• Low-Voltage, High-Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper ADVANCED ELECTRONIC MATERIALS Kraft, U., Zaki, T., Letzkus, F., Burghartz, J. N., Weber, E., Murmann, B., Klauk, H. 2019; 5 (2)

  View details for DOI 10.1002/aelm.201800453

  View details for Web of Science ID 000459622700006

• An Always-On 3.8 mu J/86% CIFAR-10 Mixed-Signal Binary CNN Processor With All Memory on Chip in 28-nm CMOS Bankman, D., Yang, L., Moons, B., Verhelst, M., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2019: 158–72

  View details for DOI 10.1109/JSSC.2018.2869150

  View details for Web of Science ID 000457637300015

• An Energy Harvester Using Image Sensor Pixels With Cold Start and Over 96% MPPT Efficiency Shah, N., Lajevardi, P., Wojciechowski, K., Lang, C., Murmann, B., IEEE IEEE. 2019: 207-+

  View details for DOI 10.1109/LSSC.2019.2933145

  View details for Web of Science ID 000520410000071

• Long-Short Term Memory Neural Network Stability and Stabilization using Linear Matrix Inequalities Deka, S. A., Stipanovic, D. M., Murmann, B., Tomlin, C. J., IEEE IEEE. 2019

  View details for Web of Science ID 000483076402096

• A Data-Compressive Wired-OR Readout for Massively Parallel Neural Recording Muratore, D. G., Tandon, P., Wootters, M., Chichilnisky, E. J., Mitra, S., Murmann, B., IEEE IEEE. 2019

  View details for Web of Science ID 000483076401065

• Toward Always-On Mobile Object Detection: Energy Versus Performance Tradeoffs for Embedded HOG Feature Extraction IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY Omid-Zohoor, A., Young, C., Ta, D., Murmann, B. 2018; 28 (5): 1102–15

  View details for DOI 10.1109/TCSVT.2017.2653187

  View details for Web of Science ID 000431955000005

• Skin electronics from scalable fabrication of an intrinsically stretchable transistor array NATURE Wang, S., Xu, J., Wang, W., Wang, G., Rastak, R., Molina-Lopez, F., Chung, J., Niu, S., Feig, V. R., Lopez, J., Lei, T., Kwon, S., Kim, Y., Foudeh, A. M., Ehrlich, A., Gasperini, A., Yun, Y., Murmann, B., Tok, J., Bao, Z. 2018; 555 (7694): 83-+

  Abstract

  Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable-like human skin-would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.

  View details for PubMedID 29466334

• BinarEye: An Always-On Energy-Accuracy-Scalable Binary CNN Processor With All Memory On Chip In 28nm CMOS Moons, B., Bankman, D., Yang, L., Murmann, B., Verhelst, M., IEEE IEEE. 2018

  View details for Web of Science ID 000434207400066

• A 7b 2 GS/s Time-Interleaved SAR ADC with Time Skew Calibration Based on Current Integrating Sampler Jiang, W., Zhu, Y., Chan, C., Murmann, B., U, S., Martins, R., IEEE IEEE. 2018: 235–38

  View details for Web of Science ID 000459847500071

• Clock Synchronous Reset and Skew Calibration of 65GS/s ADCs in A Multi-Lane Coherent Receiver Athreya, S., Hedayati, H., Kazemkhani, S., Chen, Y., Vats, S., Scott, M. D., Zeydel, B., Keller, P., Wang, J., Avula, B., Murmann, B., Iroaga, E., IEEE IEEE. 2018: 250–53

  View details for Web of Science ID 000448159800064

• TRIG: Hardware Accelerator for Inference-Based Applications and Experimental Demonstration Using Carbon Nanotube FETs Hills, G., Bankman, D., Moons, B., Yang, L., Hillard, J., Kahng, A., Park, R., Verhelst, M., Murmann, B., Shulaker, M. M., Wong, H., Mitra, S., IEEE IEEE. 2018

  View details for DOI 10.1145/3195970.3196132

  View details for Web of Science ID 000446034500096

• An Always-On 3.8 mu J/86% CIFAR-10 Mixed-Signal Binary CNN Processor with All Memory on Chip in 28nm CMOS Bankman, D., Yang, L., Moons, B., Verhelst, M., Murmann, B., IEEE IEEE. 2018: 222-+

  View details for Web of Science ID 000459205600088

• A New Figure of Merit Equation for Analog-to-Digital Converters in CMOS Image Sensors Kwon, M., Murmann, B., IEEE IEEE. 2018

  View details for Web of Science ID 000451218703044

• Some Local Stability Properties of an Autonomous Long Short-Term Memory Neural Network Model Stipanovic, D. M., Murmann, B., Causo, M., Lekic, A., Royo, V., Tomlin, C. J., Beigne, E., Thuries, S., Zarudniev, M., Lesecq, S., IEEE IEEE. 2018

  View details for Web of Science ID 000451218700072

• Bit Error Tolerance of a CIFAR-10 Binarized Convolutional Neural Network Processor Yang, L., Bankman, D., Moons, B., Verhelst, M., Murmann, B., IEEE IEEE. 2018

  View details for Web of Science ID 000451218701157

• A 56 Gb/s 6 mW 300 um(2) inverter-based CTLE for short-reach PAM2 applications in 16 nm CMOS Zheng, K., Frans, Y., Chang, K., Murmann, B., IEEE IEEE. 2018

  View details for Web of Science ID 000434207400071

• An Always-On 3.8 mu J/86% CIFAR-10 Mixed-Signal Binary CNN Processor with All Memory on Chip in 28nm CMOS Bankman, D., Yang, L., Moons, B., Verhelst, M., Murmann, B., IEEE IEEE. 2018

  View details for Web of Science ID 000432256300087

• A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI. IEEE journal of solid-state circuits Chen, M. C., Perez, A. P., Kothapalli, S. R., Cathelin, P., Cathelin, A., Gambhir, S. S., Murmann, B. 2017; 52 (11): 2843-2856

  Abstract

  This paper presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 µm by 250 µm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables an efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator's measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1-V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. The functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.

  View details for DOI 10.1109/JSSC.2017.2749425

  View details for PubMedID 31303662

  View details for PubMedCentralID PMC6625768

• A Mixer Front End for a Four-Channel Modulated Wideband Converter With 62-dB Blocker Rejection IEEE JOURNAL OF SOLID-STATE CIRCUITS Adams, D., Eldar, Y. C., Murmann, B. 2017; 52 (5): 1286-1294

  View details for DOI 10.1109/JSSC.2017.2647941

  View details for Web of Science ID 000399943800010

• A highly stretchable, transparent, and conductive polymer. Science advances Wang, Y., Zhu, C., Pfattner, R., Yan, H., Jin, L., Chen, S., Molina-Lopez, F., Lissel, F., Liu, J., Rabiah, N. I., Chen, Z., Chung, J. W., Linder, C., Toney, M. F., Murmann, B., Bao, Z. 2017; 3 (3)

  Abstract

  Previous breakthroughs in stretchable electronics stem from strain engineering and nanocomposite approaches. Routes toward intrinsically stretchable molecular materials remain scarce but, if successful, will enable simpler fabrication processes, such as direct printing and coating, mechanically robust devices, and more intimate contact with objects. We report a highly stretchable conducting polymer, realized with a range of enhancers that serve a dual function: (i) they change morphology and (ii) they act as conductivity-enhancing dopants in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The polymer films exhibit conductivities comparable to the best reported values for PEDOT:PSS, with over 3100 S/cm under 0% strain and over 4100 S/cm under 100% strain-among the highest for reported stretchable conductors. It is highly durable under cyclic loading, with the conductivity maintained at 3600 S/cm even after 1000 cycles to 100% strain. The conductivity remained above 100 S/cm under 600% strain, with a fracture strain of 800%, which is superior to even the best silver nanowire- or carbon nanotube-based stretchable conductor films. The combination of excellent electrical and mechanical properties allowed it to serve as interconnects for field-effect transistor arrays with a device density that is five times higher than typical lithographically patterned wavy interconnects.

  View details for DOI 10.1126/sciadv.1602076

  View details for PubMedID 28345040

• A 14-Bit 30-MS/s 38-mW SAR ADC Using Noise Filter Gear Shifting IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS Kramer, M., Janssen, E., Doris, K., Murmann, B. 2017; 64 (2): 116-120

  View details for DOI 10.1109/TCSII.2016.2554858

  View details for Web of Science ID 000395489200004

• Highly stretchable polymer semiconductor films through the nanoconfinement effect SCIENCE Xu, J., Wang, S., Wang, G. N., Zhu, C., Luo, S., Jin, L., Gu, X., Chen, S., Feig, V. R., To, J. W., Rondeau-Gagne, S., Park, J., Schroeder, B. C., Lu, C., Oh, J. Y., Wang, Y., Kim, Y., Yan, H., Sinclair, R., Zhou, D., Xue, G., Murmann, B., Linder, C., Cai, W., Tok, J. B., Chung, J. W., Bao, Z. 2017; 355 (6320): 59-?

  Abstract

  Soft and conformable wearable electronics require stretchable semiconductors, but existing ones typically sacrifice charge transport mobility to achieve stretchability. We explore a concept based on the nanoconfinement of polymers to substantially improve the stretchability of polymer semiconductors, without affecting charge transport mobility. The increased polymer chain dynamics under nanoconfinement significantly reduces the modulus of the conjugated polymer and largely delays the onset of crack formation under strain. As a result, our fabricated semiconducting film can be stretched up to 100% strain without affecting mobility, retaining values comparable to that of amorphous silicon. The fully stretchable transistors exhibit high biaxial stretchability with minimal change in on current even when poked with a sharp object. We demonstrate a skinlike finger-wearable driver for a light-emitting diode.

  View details for DOI 10.1126/science.aah4496

  View details for PubMedID 28059762

• LOGNET: ENERGY-EFFICIENT NEURAL NETWORKS USING LOGARITHMIC COMPUTATION Lee, E. H., Miyashita, D., Chai, E., Murmann, B., Wong, S., IEEE IEEE. 2017: 5900–5904

  View details for Web of Science ID 000414286206013

• Investigating Limiting Factors in Stretchable All-Carbon Transistors for Reliable Stretchable Electronics. ACS nano Chortos, A. n., Zhu, C. n., Oh, J. Y., Yan, X. n., Pochorovski, I. n., To, J. W., Liu, N. n., Kraft, U. n., Murmann, B. n., Bao, Z. n. 2017; 11 (8): 7925–37

  Abstract

  Stretchable form factors enable electronic devices to conform to irregular 3D structures, including soft and moving entities. Intrinsically stretchable devices have potential advantages of high surface coverage of active devices, improved durability, and reduced processing costs. This work describes intrinsically stretchable transistors composed of single-walled carbon nanotube (SWNT) electrodes and semiconductors and a dielectric that consists of a nonpolar elastomer. The use of a nonpolar elastomer dielectric enabled hysteresis-free device characteristics. Compared to devices on SiO2 dielectrics, stretchable devices with nonpolar dielectrics showed lower mobility in ambient conditions because of the absence of doping from water. The effect of a SWNT band gap on device characteristics was investigated by using different SWNT sources as the semiconductor. Large-band-gap SWNTs exhibited trap-limited behavior caused by the low capacitance of the dielectric. In contrast, high-current devices based on SWNTs with smaller band gaps were more limited by contact resistance. Of the tested SWNT sources, SWNTs with a maximum diameter of 1.5 nm performed the best, with a mobility of 15.4 cm2/Vs and an on/off ratio >103 for stretchable transistors. Large-band-gap devices showed increased sensitivity to strain because of a pronounced dependence on the dielectric thickness, whereas contact-limited devices showed substantially less strain dependence.

  View details for PubMedID 28745872

• Active control of probability amplitudes in a mesoscale system via feedback-induced suppression of dissipation and noise JOURNAL OF APPLIED PHYSICS Gupta, C., Perez, A. P., Fischer, S. R., Weinreich, S. B., Murmann, B., Howe, R. T. 2016; 120 (22)

  View details for DOI 10.1063/1.4971867

  View details for Web of Science ID 000391535900013

• The Successive Approximation Register ADC: A Versatile Building Block for Ultra-Low-Power to Ultra-High-Speed Applications IEEE COMMUNICATIONS MAGAZINE Murmann, B. 2016; 54 (4): 78-83

  View details for Web of Science ID 000375041600012

• A 14 b 35 MS/s SAR ADC Achieving 75 dB SNDR and 99 dB SFDR With Loop-Embedded Input Buffer in 40 nm CMOS IEEE JOURNAL OF SOLID-STATE CIRCUITS Kramer, M. J., Janssen, E., Doris, K., Murmann, B. 2015; 50 (12): 2891-2900

  View details for DOI 10.1109/JSSC.2015.2463110

  View details for Web of Science ID 000366659700010

• Passive charge redistribution digital-to-analogue multiplier ELECTRONICS LETTERS Bankman, D., Murmann, B. 2015; 51 (5): 387-388

  View details for DOI 10.1049/el.2014.3995

  View details for Web of Science ID 000350253300006

• A Closed-Loop Reconfigurable Switched-Capacitor DC-DC Converter for Sub-mW Energy Harvesting Applications IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Vaisband, I., Saadat, M., Murmann, B. 2015; 62 (2): 385-394

  View details for DOI 10.1109/TCSI.2014.2362971

  View details for Web of Science ID 000349399800006

• Mismatch Characterization of Small Metal Fringe Capacitors IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Tripathi, V., Murmann, B. 2014; 61 (8): 2236-2242

  View details for DOI 10.1109/TCSI.2014.2332264

  View details for Web of Science ID 000341593000004

• A Four-Channel, +/- 36 V, 780 kHz Piezo Driver Chip for Structural Health Monitoring IEEE JOURNAL OF SOLID-STATE CIRCUITS Guo, Y., Aquino, C., Zhang, D., Murmann, B. 2014; 49 (7): 1506-1513

  View details for DOI 10.1109/JSSC.2014.2315615

  View details for Web of Science ID 000338512700006

• Static Integral Nonlinearity Modeling and Calibration of Measured and Synthetic Pipeline Analog-to-Digital Converters IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT Medawar, S., Murmann, B., Handel, P., Bjorsell, N., Jansson, M. 2014; 63 (3): 502-511

  View details for DOI 10.1109/TIM.2013.2282002

  View details for Web of Science ID 000331445400001

• Design and Optimization of Continuous-Time Filters Using Geometric Programming IEEE International Symposium on Circuits and Systems (ISCAS) Seth, S., Murmann, B. IEEE. 2014: 2089–2092

  View details for Web of Science ID 000346488600524

• A 160 MS/s, 11.1 mW, Single-Channel Pipelined SAR ADC with 68.3 dB SNDR 36th Annual IEEE Custom Integrated Circuits Conference (CICC) - The Showcase for Integrated Circuit Design in the Heart of Silicon Valley Tripathi, V., Murmann, B. IEEE. 2014

  View details for Web of Science ID 000349122300015

• Low-Rate Identification of Memory Polynomials IEEE International Symposium on Circuits and Systems (ISCAS) Hammler, N., Eldar, Y. C., Murmann, B. IEEE. 2014: 1034–1037

  View details for Web of Science ID 000346488600263

• Dynamic Calibration of Undersampled Pipelined ADCs by Frequency Domain Filtering IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT Medawar, S., Handel, P., Murmann, B., Bjorsell, N., Jansson, M. 2013; 62 (7): 1882-1891

  View details for DOI 10.1109/TIM.2013.2248289

  View details for Web of Science ID 000320129100002

• Settling Time and Noise Optimization of a Three-Stage Operational Transconductance Amplifier IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Seth, S., Murmann, B. 2013; 60 (5): 1168-1174

  View details for DOI 10.1109/TCSI.2013.2244325

  View details for Web of Science ID 000319601700008

• A 256 pixel magnetoresistive biosensor microarray in 0.18μm CMOS. IEEE journal of solid-state circuits Hall, D. A., Gaster, R. S., Makinwa, K., Wang, S. X., Murmann, B. 2013; 48 (5): 1290-1301

  Abstract

  Magnetic nanotechnologies have shown significant potential in several areas of nanomedicine such as imaging, therapeutics, and early disease detection. Giant magnetoresistive spin-valve (GMR SV) sensors coupled with magnetic nanotags (MNTs) possess great promise as ultra-sensitive biosensors for diagnostics. We report an integrated sensor interface for an array of 256 GMR SV biosensors designed in 0.18 μm CMOS. Arranged like an imager, each of the 16 column level readout channels contains an analog front- end and a compact ΣΔ modulator (0.054 mm2) with 84 dB of dynamic range and an input referred noise of 49 nT/√Hz. Performance is demonstrated through detection of an ovarian cancer biomarker, secretory leukocyte peptidase inhibitor (SLPI), spiked at concentrations as low as 10 fM. This system is designed as a replacement for optical protein microarrays while also providing real-time kinetics monitoring.

  View details for DOI 10.1109/JSSC.2013.2245058

  View details for PubMedID 24761029

  View details for PubMedCentralID PMC3993911

• A 256 Pixel Magnetoresistive Biosensor Microarray in 0.18 mu m CMOS IEEE Radio Frequency Integrated Circuits (RFIC) Symposium in Conjunction with the IEEE MTT-S International Microwave Symposium (IMS) / Microwave Week Hall, D. A., Gaster, R. S., Makinwa, K. A., Wang, S. X., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2013: 1290–1301

  Abstract

  Magnetic nanotechnologies have shown significant potential in several areas of nanomedicine such as imaging, therapeutics, and early disease detection. Giant magnetoresistive spin-valve (GMR SV) sensors coupled with magnetic nanotags (MNTs) possess great promise as ultra-sensitive biosensors for diagnostics. We report an integrated sensor interface for an array of 256 GMR SV biosensors designed in 0.18 μm CMOS. Arranged like an imager, each of the 16 column level readout channels contains an analog front- end and a compact ΣΔ modulator (0.054 mm2) with 84 dB of dynamic range and an input referred noise of 49 nT/√Hz. Performance is demonstrated through detection of an ovarian cancer biomarker, secretory leukocyte peptidase inhibitor (SLPI), spiked at concentrations as low as 10 fM. This system is designed as a replacement for optical protein microarrays while also providing real-time kinetics monitoring.

  View details for DOI 10.1109/JSSC.2013.2245058

  View details for Web of Science ID 000320936300016

  View details for PubMedCentralID PMC3993911

• A Delta Sigma Interface for MEMS Accelerometers Using Electrostatic Spring Constant Modulation for Cancellation of Bondwire Capacitance Drift IEEE International Solid-State Circuits Conference (ISSCC) Lajevardi, P., Petkov, V. P., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2013: 265–75

  View details for DOI 10.1109/JSSC.2012.2218721

  View details for Web of Science ID 000313362400023

• Mismatch Characterization of Small Metal Fringe Capacitors 35th Annual IEEE Custom Integrated Circuits Conference (CICC) - The Showcase for Circuit Design in the Heart of Silicon Valley Tripathi, V., Murmann, B. IEEE. 2013

  View details for Web of Science ID 000350887800030

• Energy Limits in A/D Converters IEEE Faible Tension Faible Consommation Conference (FTFC) Murmann, B. IEEE. 2013

  View details for Web of Science ID 000332574000035

• A/D Converter Circuit and Architecture Design for High-Speed Data Communication 35th Annual IEEE Custom Integrated Circuits Conference (CICC) - The Showcase for Circuit Design in the Heart of Silicon Valley Murmann, B. IEEE. 2013

  View details for Web of Science ID 000350887800108

• Integrated Piezo-Element Drive Electronics for Structural Health Monitoring 8th International Workshop on Structural Health Monitoring Guo, Y., Murmann, B. DESTECH PUBLICATIONS, INC. 2013: 1724–1731

  View details for Web of Science ID 000328194500046

• A Four-Channel, +/- 36 V Piezo Driver Chip for a Densely Integrated SHM System 9th International Workshop on Structural Health Monitoring (IWSHM) Guo, Y., Aquino, C., Zhang, D., Murmann, B. DESTECH PUBLICATIONS, INC. 2013: 1551–1558

  View details for Web of Science ID 000329292700189

• High-Performance Pipelined ADCs for Wireless Infrastructure Systems Advances in Analog and RF IC Design for Wireless Communication Systems Elliott, M., Murmann, B. edited by Manganaro, G., Leenaerts, D.M., W. Elsevier. 2013
• An 8-bit 450-MS/s Single-Bit/Cycle SAR ADC in 65-nm CMOS Tripathi, V., Murmann, B. 2013
• A Four-Channel, ±36 V, 780 kHz Piezo Driver Chip for Structural Health Monitoring Guo, Y., Aquino, C., Zhang, D., Murmann, B. 2013
• Static Integral Nonlinearity Modeling and Calibration of Measured and Synthetic Pipeline Analog-Digital Converters to appear, IEEE Trans. Instrum. Meas. Medawar, S., Murmann, B., Handel, P., Bjorsell, N., Jansson, M. 2013
• Dynamic Calibration of Undersampled Pipelined ADCs by Frequency Domain Filtering IEEE Trans. Instrum. Meas. Medawar, S., Händel, P., Murmann, B., Björsell, N., Jansson, M. 2013; 62 (7): 1882-1891
• A ΣΔ Interface for MEMS Accelerometers using Electrostatic Spring-Constant Modulation for Cancellation of Bondwire Capacitance Drift IEEE J. Solid-State Circuits Lajevardi, P., Petkov, V., P., Murmann, B. 2013; 48 (1): 265-275
• A 256 Pixel Magnetoresistive Biosensor Microarray in 0.18 µm CMOS IEEE J. Solid-State Circuits Hall, D., A., Gaster, R., S., Makinwa, K.A., A., Wang, S., X., Murmann, B. 2013; 48 (5): 1290-1301
• On the use of redundancy in successive approximation A/D converters Murmann, B. 2013
• Mismatch Characterization of Small Metal Fringe Capacitors Tripathi, V., Murmann, B. 2013
• Integrated Piezo-Element Drive Electronics for Structural Health Monitoring Guo, Y., Aquino, C., Zhang, D., Murmann, B. 2013
• Energy limits in A/D converters Murmann, B. 2013
• A/D Converter Circuit and Architecture Design for High-Speed Data Communication Murmann, B. 2013
• A 12-Bit, 200-MS/s, 11.5-mW Pipeline ADC Using a Pulsed Bucket Brigade Front-End Dolev, N., Kramer, M., Murmann, B. 2013
• A 0.11mm^2, 5.7-to-6.7GHz, Parametrically Pumped Quadrature LC-VCO with Digital Outputs Bhardwaj, K., Seth, S., Murmann, B., Lee, T., H. 2013
• Analysis and Design of Elementary MOS Amplifier Stages Murmann, B. NTS Press. 2013
• Digitally Assisted Data Converter Design Murmann, B. 2013
• A 12-b, 30-MS/s, 2.95-mW Pipelined ADC Using Single-Stage Class-AB Amplifiers and Deterministic Background Calibration IEEE JOURNAL OF SOLID-STATE CIRCUITS Kim, J. K., Murmann, B. 2012; 47 (9): 2141-2151

  View details for DOI 10.1109/JSSC.2012.2194191

  View details for Web of Science ID 000308007900016

• Engineering the metal gate electrode for controlling the threshold voltage of organic transistors APPLIED PHYSICS LETTERS Chung, Y., Johnson, O., Deal, M., Nishi, Y., Murmann, B., Bao, Z. 2012; 101 (6)

  View details for DOI 10.1063/1.4739511

  View details for Web of Science ID 000307862400089

• HermesE: A 96-Channel Full Data Rate Direct Neural Interface in 0.13 mu m CMOS IEEE JOURNAL OF SOLID-STATE CIRCUITS Gao, H., Walker, R. M., Nuyujukian, P., Makinwa, K. A., Shenoy, K. V., Murmann, B., Meng, T. H. 2012; 47 (4): 1043-1055

  View details for DOI 10.1109/JSSC.2012.2185338

  View details for Web of Science ID 000302494700023

• Area scaling analysis of CMOS ADCs ELECTRONICS LETTERS Verhelst, M., Murmann, B. 2012; 48 (6): 314-U70

  View details for DOI 10.1049/el.2012.0253

  View details for Web of Science ID 000301439000010

• Mismatch of lateral field metal-oxide-metal capacitors in 180 nm CMOS process ELECTRONICS LETTERS Abusleme, A., Dragone, A., Haller, G., Murmann, B. 2012; 48 (5): 286-U1588

  View details for DOI 10.1049/el.2011.3804

  View details for Web of Science ID 000300881100026

• Micro-imprinted prism substrate for self-aligned short channel organic transistors on a flexible substrate APPLIED PHYSICS LETTERS Jeon, J., Tee, B. C., Murmann, B., Bao, Z. 2012; 100 (4)

  View details for DOI 10.1063/1.3679119

  View details for Web of Science ID 000300064500064

• Electrochemical quantum tunneling for electronic detection and characterization of biological toxins Conference on Micro- and Nanotechnology Sensors, Systems, and Applications IV Gupta, C., Walker, R. M., Gharpuray, R., Shulaker, M. M., Zhang, Z., Javanmard, M., Davis, R. W., Murmann, B., Howe, R. T. SPIE-INT SOC OPTICAL ENGINEERING. 2012

  View details for DOI 10.1117/12.920692

  View details for Web of Science ID 000306560400002

• Analog-Digital Interfaces CHIPS 2020 Keller, M., Murmann, B., Manoli, Y. edited by Hoefflinger, B. Springer. 2012
• A -131-dBc/Hz, 20-MHz MEMS Oscillator with a 6.9-mW, 69-kOhm, Gain-Tunable CMOS TIA Seth, S., Wang, S., Kenny, T., Murmann, B. 2012
• Thermal Noise in Track-and-Hold Circuits: Analysis and Simulation Techniques IEEE Solid-State Circuits Magazine Murmann, B. 2012; 4 (2): 46-54
• A ΣΔ Interface for MEMS Accelerometers using Electrostatic Spring-Constant Modulation for Cancellation of Bondwire Capacitance Drift in ISSCC Dig. Tech. Papers Lajevardi, P., Petkov, V., P., Murmann, B. 2012: 196-197
• A 12-bit, 30-MS/s, 2.95-mW Pipelined ADC Using Single-Stage Class-AB Amplifiers and Deterministic Background Calibration IEEE J. Solid-State Circuits Kim, J., Murmann, B. 2012; 47 (9): 2141-2151
• TOWARDS AN INTEGRATED CIRCUIT DESIGN OF A COMPRESSSED SAMPLING WIRELESS RECEIVER IEEE International Conference on Acoustics, Speech and Signal Processing Adams, D., Park, C. S., Eldar, Y. C., Murmann, B. IEEE. 2012: 5305–5308

  View details for Web of Science ID 000312381405095

• Settling Time and Noise Optimization of a Three-Stage Operational Transconductance Amplifier IEEE International Symposium on Circuits and Systems Seth, S., Murmann, B. IEEE. 2012: 205–208

  View details for Web of Science ID 000316903700050

• A 12-GS/s 81-mW 5-bit Time-Interleaved Flash ADC With Background Timing Skew Calibration IEEE JOURNAL OF SOLID-STATE CIRCUITS El-Chammas, M., Murmann, B. 2011; 46 (4): 838-847

  View details for DOI 10.1109/JSSC.2011.2108125

  View details for Web of Science ID 000288762800013

• Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors NANO LETTERS Chung, Y., Verploegen, E., Vailionis, A., Sun, Y., Nishi, Y., Murmann, B., Bao, Z. 2011; 11 (3): 1161-1165

  Abstract

  We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.

  View details for DOI 10.1021/nl104087u

  View details for Web of Science ID 000288061500043

  View details for PubMedID 21323381

• Design Optimization of High-Speed and Low-Power Operational Transconductance Amplifier Using g(m)/I-D Lookup Table Methodology IEICE TRANSACTIONS ON ELECTRONICS Konishi, T., Inazu, K., Lee, J. G., Natsui, M., Masui, S., Murmann, B. 2011; E94C (3): 334-345

  View details for DOI 10.1587/transele.E94.C.334

  View details for Web of Science ID 000290126400014

• Feedforward Interference Cancellation Architecture for Short-Range Wireless Communication IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS Hori, S., Murmann, B. 2011; 58 (1): 16-20

  View details for DOI 10.1109/TCSII.2010.2092828

  View details for Web of Science ID 000286519800004

• Low-Power Pipelined A/D Conversion Analog Circuit Design Murmann, B. edited by Steyaert, M., Roermund, A.H., M., Baschirotto, A. Springer. 2011
• A 256 Channel Magnetoresistive Biosensor Microarray for Quantitative Proteomics Hall, D., A., Gaster, R., S., Osterfeld, S., J., Makinwa, K., Wang, S., X., Murmann, B. 2011
• Integrated Piezo-element Drive Electronics for Structural Health Monitoring Guo, Y., Murmann, B. 2011
• A Continuous-Time, Jitter Insensitive ∑∆ Modulator Using a Digitally Linearized Gm-C Integrator with Embedded SC Feedback DAC Kim, D., Matsuura, T., Murmann, B. 2011
• A 96-Channel Full Data Rate Direct Neural Interface in 0.13µm CMOS Walker, R., M., Gao, H., Nuyujukian, P., Makinwa, K., Shenoy, K., V., Meng, T., Murmann, B. 2011
• A 6.7-ENOB, 500-MS/s, 5.1-mW Dynamic Pipeline ADC in 65-nm SOI CMOS Nguyen, R., Raynaud, C., Cathelin, A., Murmann, B. 2011
• Background Calibration of Timing Skew in Time-Interleaved A/D Converters International Conference on Sampling Theory and Applications (SampTA) Murmann, B., El-Chammas, M. 2011
• Introduction to the Special Issue on the 2010 IEEE International Solid-State Circuits Conference IEEE JOURNAL OF SOLID-STATE CIRCUITS Cho, G., Murmann, B., Halonen, K., Gharpurey, R., Sim, J. 2010; 45 (12): 2505-2509

  View details for DOI 10.1109/JSSC.2010.2091192

  View details for Web of Science ID 000285052300001

• Full-Swing and High-Gain Pentacene Logic Circuits on Plastic Substrate IEEE ELECTRON DEVICE LETTERS Jeon, J., Murmann, B., Bao, Z. 2010; 31 (12): 1488-1490

  View details for DOI 10.1109/LED.2010.2081336

  View details for Web of Science ID 000284541400044

• Portable Biomarker Detection with Magnetic Nanotags. The ... Midwest Symposium on Circuits and Systems conference proceedings : MWSCAS. Midwest Symposium on Circuits and Systems Hall, D. A., Wang, S. X., Murmann, B., Gaster, R. S. 2010: 1779-1782

  Abstract

  This paper presents a hand-held, portable biosensor platform for quantitative biomarker measurement. By combining magnetic nanoparticle (MNP) tags with giant magnetoresistive (GMR) spin-valve sensors, the hand-held platform achieves highly sensitive (picomolar) and specific biomarker detection in less than 20 minutes. The rapid analysis and potential low cost make this technology ideal for point-of-care (POC) diagnostics. Furthermore, this platform is able to detect multiple biomarkers simultaneously in a single assay, creating a promising diagnostic tool for a vast number of applications.

  View details for DOI 10.1109/ISCAS.2010.5537639

  View details for PubMedID 22495252

  View details for PubMedCentralID PMC3321410

• A 3-V, 6-Bit C-2C Digital-to-Analog Converter Using Complementary Organic Thin-Film Transistors on Glass IEEE JOURNAL OF SOLID-STATE CIRCUITS Xiong, W., Guo, Y., Zschieschang, U., Klauk, H., Murmann, B. 2010; 45 (7): 1380-1388

  View details for DOI 10.1109/JSSC.2010.2048083

  View details for Web of Science ID 000281832700011

• The Design of Fast-Settling Three-Stage Amplifiers Using the Open-Loop Damping Factor as a Design Parameter IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Nguyen, R., Murmann, B. 2010; 57 (6): 1244-1254

  View details for DOI 10.1109/TCSI.2009.2031763

  View details for Web of Science ID 000281783800013

• Trends in Low-Power, Digitally Assisted A/D Conversion IEICE TRANSACTIONS ON ELECTRONICS Murmann, B. 2010; E93C (6): 718-729

  View details for DOI 10.1587/transele.E93.C.718

  View details for Web of Science ID 000279250900002

• GMR biosensor arrays: Correction techniques for reproducibility and enhanced sensitivity BIOSENSORS & BIOELECTRONICS Hall, D. A., Gaster, R. S., Osterfeld, S. J., Murmann, B., Wang, S. X. 2010; 25 (9): 2177-2181

  Abstract

  Giant magnetoresistive biosensors possess great potential in biomedical applications for quantitatively detecting magnetically tagged biomolecules. Magnetic sensing does not suffer from the high background levels found in optical sensing modalities such as the enzyme linked immunosorbent assay translating into a technology with higher sensitivity. However, to reveal the full potential of these sensors and compensate for non-idealities such as temperature dependence, digital correction and calibration techniques are not only useful but imperative. Using these calibration techniques to correct for process variations and dynamic changes in the sensing environment (such as temperature and magnetic field), we are able to obtain extremely sensitive and, more importantly, reproducible results for quantifiable biomolecular reorganization. The reproducibility of the system was improved by over 3 x using digital correction techniques and the sensors are made temperature independent by using a novel background correction technique.

  View details for DOI 10.1016/j.bios.2010.01.039

  View details for Web of Science ID 000277930000029

  View details for PubMedID 20219342

  View details for PubMedCentralID PMC2881564

• GMR biosensor arrays: A system perspective BIOSENSORS & BIOELECTRONICS Hall, D. A., Gaster, R. S., Lin, T., Osterfeld, S. J., Han, S., Murmann, B., Wang, S. X. 2010; 25 (9): 2051-2057

  Abstract

  Giant magnetoresistive biosensors are becoming more prevalent for sensitive, quantifiable biomolecular detection. However, in order for magnetic biosensing to become competitive with current optical protein microarray technology, there is a need to increase the number of sensors while maintaining the high sensitivity and fast readout time characteristic of smaller arrays (1-8 sensors). In this paper, we present a circuit architecture scalable for larger sensor arrays (64 individually addressable sensors) while maintaining a high readout rate (scanning the entire array in less than 4s). The system utilizes both time domain multiplexing and frequency domain multiplexing in order to achieve this scan rate. For the implementation, we propose a new circuit architecture that does not use a classical Wheatstone bridge to measure the small change in resistance of the sensor. Instead, an architecture designed around a transimpedance amplifier is employed. A detailed analysis of this architecture including the noise, distortion, and potential sources of errors is presented, followed by a global optimization strategy for the entire system comprising the magnetic tags, sensors, and interface electronics. To demonstrate the sensitivity, quantifiable detection of two blindly spiked samples of unknown concentrations has been performed at concentrations below the limit of detection for the enzyme-linked immunosorbent assay. Lastly, the multiplexing capability and reproducibility of the system was demonstrated by simultaneously monitoring sensors functionalized with three unique proteins at different concentrations in real-time.

  View details for DOI 10.1016/j.bios.2010.01.038

  View details for Web of Science ID 000277930000009

  View details for PubMedID 20207130

  View details for PubMedCentralID PMC2855856

• Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks APPLIED PHYSICS LETTERS Chung, Y., Murmann, B., Selvarasah, S., Dokmeci, M. R., Bao, Z. 2010; 96 (13)

  View details for DOI 10.1063/1.3336009

  View details for Web of Science ID 000276275300063

• A 12-GS/s81-mW 5-bit Time-Interleaved Flash ADC with Background Timing Skew Calibration Symposium on VLSI Circuits El-Chammas, M., Murmann, B. IEEE. 2010: 157–158

  View details for Web of Science ID 000287508300061

• A 12-bit 800-MS/s switched-capacitor DAC with open-loop output driver and digital predistortion Daigle, C., Dastgheib, A., Murmann, B. 2010
• A 3V 6b successive-approximation ADC using complementary organic thin-film transistors on glass ISSCC Dig. Tech. Papers Xiong, W., Zschieschang, U., Murmann, B. 2010: 134-135
• A 12-bit, 30-MS/s, 2.95-mW pipelined ADC using single-stage class-AB amplifiers and deterministic background calibration Kim, J., Murmann, B. 2010
• Design of Analog Circuits Using Organic Field-Effect Transistors IEEE and ACM International Conference on Computer-Aided Design Murmann, B., Xiong, W. IEEE. 2010: 504–507

  View details for Web of Science ID 000287997600083

• Portable Biomarker Detection with Magnetic Nanotags International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010) Hall, D. A., Wang, S. X., Murmann, B., Gaster, R. S. IEEE. 2010: 1779–82

  Abstract

  This paper presents a hand-held, portable biosensor platform for quantitative biomarker measurement. By combining magnetic nanoparticle (MNP) tags with giant magnetoresistive (GMR) spin-valve sensors, the hand-held platform achieves highly sensitive (picomolar) and specific biomarker detection in less than 20 minutes. The rapid analysis and potential low cost make this technology ideal for point-of-care (POC) diagnostics. Furthermore, this platform is able to detect multiple biomarkers simultaneously in a single assay, creating a promising diagnostic tool for a vast number of applications.

  View details for Web of Science ID 000287216002001

  View details for PubMedCentralID PMC3321410

• Matrix-insensitive protein assays push the limits of biosensors in medicine NATURE MEDICINE Gaster, R. S., Hall, D. A., Nielsen, C. H., Osterfeld, S. J., Yu, H., Mach, K. E., Wilson, R. J., Murmann, B., Liao, J. C., Gambhir, S. S., Wang, S. X. 2009; 15 (11): 1327-U130

  Abstract

  Advances in biosensor technologies for in vitro diagnostics have the potential to transform the practice of medicine. Despite considerable work in the biosensor field, there is still no general sensing platform that can be ubiquitously applied to detect the constellation of biomolecules in diverse clinical samples (for example, serum, urine, cell lysates or saliva) with high sensitivity and large linear dynamic range. A major limitation confounding other technologies is signal distortion that occurs in various matrices due to heterogeneity in ionic strength, pH, temperature and autofluorescence. Here we present a magnetic nanosensor technology that is matrix insensitive yet still capable of rapid, multiplex protein detection with resolution down to attomolar concentrations and extensive linear dynamic range. The matrix insensitivity of our platform to various media demonstrates that our magnetic nanosensor technology can be directly applied to a variety of settings such as molecular biology, clinical diagnostics and biodefense.

  View details for DOI 10.1038/nm.2032

  View details for Web of Science ID 000271543700023

  View details for PubMedID 19820717

• Digital Compensation of Dynamic Acquisition Errors at the Front-End of High-Performance A/D Converters IEEE JOURNAL OF SELECTED TOPICS IN SIGNAL PROCESSING Nikaeen, P., Murmann, B. 2009; 3 (3): 499-508

  View details for DOI 10.1109/JSTSP.2009.2020575

  View details for Web of Science ID 000266252400014

• General Analysis on the Impact of Phase-Skew in Time-Interleaved ADCs IEEE International Symposium on Circuits and Systems El-Chammas, M., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2009: 902–10

  View details for DOI 10.1109/TCSI.2009.2015206

  View details for Web of Science ID 000266409000006

• A 9.4-bit, 50-MS/s, 1.44-mW Pipelined ADC Using Dynamic Source Follower Residue Amplification IEEE Symposium on VLSI Circuits Hu, J., Dolev, N., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2009: 1057–66

  View details for DOI 10.1109/JSSC.2009.2014705

  View details for Web of Science ID 000265092300004

• Power Dissipation Bounds for High-Speed Nyquist Analog-to-Digital Converters IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Sundstrom, T., Murmann, B., Svensson, C. 2009; 56 (3): 509-518

  View details for DOI 10.1109/TCSI.2008.2002548

  View details for Web of Science ID 000264397000001

• A 3-V, 6-bit C-2C Digital-to-Analog Converter using Complementary Organic Thin-Film Transistors on Glass 35th European Solid-State Circuits Conference (ESSCIRC 2009) Xiong, W., Guo, Y., Murmann, B., Zschieschang, U., Klauk, H. IEEE. 2009: 213–216

  View details for Web of Science ID 000276195800045

• PHASE LOCK LOOP BASED TEMPERATURE COMPENSATION FOR MEMS OSCILLATORS 22nd International Conference on Micro Electro Mechanical Systems (MEMS) Salvia, J., Melamud, R., Chandorkar, S., Lee, H. K., Qu, Y. Q., Lord, S. F., Murmann, B., Kenny, T. W. IEEE. 2009: 661–664

  View details for Web of Science ID 000341431500165

• Phase Lock Loop based Temperature Compensation for MEMS Oscillators Salvia, J., Melamud, R., Chandorkar, S., Lee, H., Qu, Y., Lord, S., Murmann, B. 2009
• A 3-V, 6-bit C-2C digital-to-analog converter using complementary organic thin-film transistors on glass Xiong, W., Guo, Y., Zschieschang, U., Klauk, H., Murmann, B. 2009
• A 56M Omega CMOS TIA for MEMS Applications IEEE Custom Integrated Circuits Conference Salvia, J., Lajevardi, P., Hekmat, M., Murmann, B. IEEE. 2009: 199–202

  View details for Web of Science ID 000275926300043

• Calculation of Total Integrated Noise in Analog Circuits IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Dastgheib, A., Murmann, B. 2008; 55 (10): 2988-2993

  View details for DOI 10.1109/TCSI.2008.923276

  View details for Web of Science ID 000261361300003

• A study of electrostatic force nonlinearities in resonant microstructures APPLIED PHYSICS LETTERS Agarwal, M., Chandorkar, S. A., Mehta, H., Candler, R. N., Kim, B., Hopcroft, M. A., Melamud, R., Jha, C. M., Bahl, G., Yama, G., Kenny, T. W., Murmann, B. 2008; 92 (10)

  View details for DOI 10.1063/1.2834707

  View details for Web of Science ID 000253989300168

• Characterizing the impact of substrate noise on high-speed flash ADCs 9th International Symposium on Quality Electronic Design Nikaeen, P., Murmann, B., Dutton, R. W. IEEE COMPUTER SOC. 2008: 396–400

  View details for DOI 10.1109/ISQED.2008.141

  View details for Web of Science ID 000255151700072

• Digital correction of dynamic track-and-hold errors providing SFDR > 83 dB up to fin = 470 MHz Nikaeen, P., Murmann, B. 2008
• General analysis on the impact of phase-skew in time-interleaved ADCs IEEE International Symposium on Circuits and Systems El-Chammas, M., Murmann, B. IEEE. 2008: 17–20

  View details for Web of Science ID 000258532100006

• A/D Converter Trends: Power Dissipation, Scaling and Digitally Assisted Architectures IEEE Custom Integrated Circuits Conference Murmann, B. IEEE. 2008: 105–112

  View details for Web of Science ID 000262643900023

• A 9.4-bit, 50-MS/s, 1.44-mW pipelined ADC using dynamic residue amplification IEEE Symposium on VLSI Circuits Hu, J., Dolev, N., Murmann, B. IEEE. 2008: 216–217

  View details for Web of Science ID 000259094300083

• Hybrid integration of bandgap reference circuits using silicon ICs and germanium devices 9th International Symposium on Quality Electronic Design Kim, J. W., Murmann, B., Dutton, R. W. IEEE COMPUTER SOC. 2008: 429–432

  View details for DOI 10.1109/ISQED.2008.160

  View details for Web of Science ID 000255151700078

• Predictive control algorithm for phase-locked loops IEEE International Symposium on Circuits and Systems Abusleme, A., Murmann, B. IEEE. 2008: 1528–1531

  View details for Web of Science ID 000258532101113

• Digitally enhanced analog circuits: System aspects IEEE International Symposium on Circuits and Systems Murmann, B., Vogel, C., Koeppl, H. IEEE. 2008: 560–563

  View details for Web of Science ID 000258532100143

• Exploring the Limits and Practicality of Q-based Temperature Compensation for Silicon Resonators IEEE International Electron Devices Meeting Salvia, J., Messana, M., Ohline, M., Hopcroft, M. A., Melamud, R., Chandorkar, S., Lee, H. K., Bahl, G., Murmann, B., Kenny, T. W. IEEE. 2008: 671–674

  View details for Web of Science ID 000265829300156

• A 9.4-bit, 50-MS/s, 1.44-mW pipelined ADC using dynamic residue amplification IEEE Symposium on VLSI Circuits Hu, J., Dolev, N., Murmann, B. IEEE. 2008: 169–170

  View details for Web of Science ID 000259442400083

• Digital domain measurement and cancellation of residue amplifier nonlinearity in pipelined ADCs IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT Murmann, B., Boser, B. E. 2007; 56 (6): 2504-2514

  View details for DOI 10.1109/TIM.2007.907950

  View details for Web of Science ID 000251745500050

• Scaling of amplitude-frequency-dependence nonlinearities in electrostatically transduced microresonators JOURNAL OF APPLIED PHYSICS Agarwal, M., Mehta, H., Candler, R. N., Chandorkar, S. A., Kim, B., Hopcroft, M. A., Melamud, R., Bahl, G., Yama, G., Kenny, T. W., Murmann, B. 2007; 102 (7)

  View details for DOI 10.1063/1.2785018

  View details for Web of Science ID 000250147700148

• A 12-bit 75-MS/s pipelined ADC using incomplete settling Symposium on VLSI Circuits Iroaga, E., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2007: 748–56

  View details for DOI 10.1109/JSSC.2007.892154

  View details for Web of Science ID 000245600200005

• A low-power, 6-bit time-interleaved SAR ADC using OFDM pilot tone calibration IEEE Custom Integrated Circuits Conference Oh, Y., Murmann, B. IEEE. 2007: 193–196

  View details for Web of Science ID 000252233200042

• A High-Density Magnetoresistive Biosensor Array with Drift-Compensation Mechanism ISSCC Dig. Tech. Papers Han, S., Yu, H., Murmann, B., Pourmand, N., Wang, S. 2007: 168-594
• Acceleration sensitivity in beam-type electrostatic microresonators APPLIED PHYSICS LETTERS Agarwal, M., Park, K. K., Chandorkar, S. A., Candler, R. N., Kim, B., Hopcroft, M. A., Melamud, R., Kenny, T. W., Murmann, B. 2007; 90 (1)

  View details for DOI 10.1063/1.2426884

  View details for Web of Science ID 000243379900112

• Impact of miniaturization on the current handling of electrostatic MEMS resonators 20th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2007) Agarwal, M., Mehta, H., Candler, R. N., Chandorkar, S. A., Kim, B., Hopicroft, M. A., Melamud, R., Bahl, G., Yama, G., Kenny, T. W., Murmann, B. IEEE. 2007: 530–533

  View details for Web of Science ID 000255867800133

• An analysis of latch comparator offset due to load capacitor mismatch IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS Nikoozadeh, A., Murmann, B. 2006; 53 (12): 1398-1402

  View details for DOI 10.1109/TCSII.2006.883204

  View details for Web of Science ID 000242948500014

• Optimal drive condition for nonlinearity reduction in electrostatic microresonators APPLIED PHYSICS LETTERS Agarwal, M., Chandorkar, S. A., Candler, R. N., Kim, B., Hopcroft, M. A., Melamud, R., Jha, C. M., Kenny, T. W., Murmann, B. 2006; 89 (21)

  View details for DOI 10.1063/1.2388886

  View details for Web of Science ID 000242220000087

• Analysis and measurement of signal distortion due to ESD protection circuits IEEE JOURNAL OF SOLID-STATE CIRCUITS Chun, J., Murmann, B. 2006; 41 (10): 2354-2358

  View details for DOI 10.1109/JJSC.2006.881550

  View details for Web of Science ID 000240697600019

• Impact of scaling on analog performance and associated modeling needs IEEE TRANSACTIONS ON ELECTRON DEVICES Murmann, B., Nikaeen, P., Connelly, D. J., Dutton, R. W. 2006; 53 (9): 2160-2167

  View details for DOI 10.1109/TED.2006.880372

  View details for Web of Science ID 000240076500021

• System embedded ADC calibration for OFDM receivers IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Oh, Y., Murmann, B. 2006; 53 (8): 1693-1703

  View details for DOI 10.1109/TCSI.2006.879063

  View details for Web of Science ID 000239768900007

• Digitally assisted analog circuits Hot Chips 17 Conference Murmann, B. IEEE COMPUTER SOC. 2006: 38–47

  View details for Web of Science ID 000236796200006

• Nonlinear characterization of electrostatic MEMS resonators IEEE International Frequency Control Symposium and Exposition Agarwal, M., Park, K. K., Candler, R. N., Kim, B., Hopcroft, M. A., Chandorkar, S. A., Jha, C. M., Melamud, R., Kenny, T. W., Murmann, B. IEEE. 2006: 209–212

  View details for Web of Science ID 000243684700037

• A 12b, 75MS/s Pipelined ADC Using Incomplete Settling Iroaga, E., Murmann, B. 2006
• 4.25 Gb/s laser driver: Design challenges and EDA tool limitations 43rd Design Automation Conference Sheahan, B., Fattaruso, J. W., Wong, J., Muth, K., Murmann, B. ASSOC COMPUTING MACHINERY. 2006: 863–866

  View details for Web of Science ID 000240104100169

• Limits on ADC power dissipation 14th Workshop on Advances in Analog Circuit Design Murmann, B. SPRINGER. 2006: 351–367

  View details for Web of Science ID 000236859900016

• Effects of mechanical vibrations and bias voltage noise on phase noise of MEMS resonator based oscillators 19th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2006) Agarwal, M., Park, K. K., Hopcroft, M., Chandorkar, S., Candler, R. N., Kim, B., Melamud, R., Yama, G., Murmann, B., Kenny, T. W. IEEE. 2006: 154–157

  View details for Web of Science ID 000236994500039

• Temperature compensation of a MEMS resonator using quality factor as a thermometer 19th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2006) Hopcroft, M. A., Agarwal, M., Park, K. K., Kim, B., Jha, C. M., Candler, R. N., Yama, G., Murmann, B., Kenny, T. W. IEEE. 2006: 222–225

  View details for Web of Science ID 000236994500056

• Non-linearity cancellation in MEMS resonators for improved power-handling IEEE International Electron Devices Meeting Agarwal, M., Park, K., Candler, R., Hopcroft, M., Jha, C., Melamud, R., Kim, B., Murmann, B., Kenny, T. W. IEEE. 2005: 295–298

  View details for Web of Science ID 000236225100066

• A background correction technique for timing errors in time-interleaved analog-to-digital converters. IEEE International Symposium on Circuits and Systems (ISCAS) Iroaga, E., Murmann, B., Nathawad, L. IEEE. 2005: 5557–5560

  View details for Web of Science ID 000232002405052

• A low-power distributed wide-band LNA in 0.18 mu m CMOS IEEE International Symposium on Circuits and Systems (ISCAS) Arekapudi, S., Iroaga, E., Murmann, B. IEEE. 2005: 5055–5058

  View details for Web of Science ID 000232002404220

• A/D Conversion gets a Digital Assist EE Times Murmann, B. 2004
• Digitally Assisted Analog Integrated Circuits ACM Queue Murmann, B., Boser, B. 2004; 2 (1): 64-71
• A 12-bit 75-MS/s pipelined ADC using open-loop residue amplification IEEE International Solid-State Circuits Conference Murmann, B., Boser, B. E. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 2040–50

  View details for DOI 10.1109/JSSC.2003.819167

  View details for Web of Science ID 000187569900004

• A 12b 75MS/s pipelined ADC using open-loop residue amplification IEEE International Solid-State Circuits Conference Murmann, B., Boser, B. E. IEEE. 2003: 328-?

  View details for Web of Science ID 000185583300139