Bio


Boris Murmann is a Professor of Electrical Engineering at Stanford University. He joined Stanford in 2004 after completing his Ph.D. degree in electrical engineering at the University of California, Berkeley in 2003. From 1994 to 1997, he was with Neutron Microelectronics, Germany, where he developed low-power and smart-power ASICs in automotive CMOS technology. Since 2004, he has worked as a consultant with numerous Silicon Valley companies. Dr. Murmann’s research interests are in mixed-signal integrated circuit design, with special emphasis on sensor interfaces, data converters and custom circuits for machine learning. In 2008, he was a co-recipient of the Best Student Paper Award at the VLSI Circuits Symposium and a recipient of the Best Invited Paper Award at the IEEE Custom Integrated Circuits Conference (CICC). He received the Agilent Early Career Professor Award in 2009 and the Friedrich Wilhelm Bessel Research Award in 2012. He has served as an Associate Editor of the IEEE Journal of Solid-State Circuits, as well as the Data Converter Subcommittee Chair and the Technical Program Chair of the IEEE International Solid-State Circuits Conference (ISSCC). He is the founding faculty co-director of the Stanford SystemX Alliance and the faculty director of Stanford's System Prototyping Facility (SPF). He is a Fellow of the IEEE.

Academic Appointments


Honors & Awards


  • Best Invited Paper Award, IEEE CICC (2008)
  • Best Student Paper Award, IEEE VLSI Circuit Symposium (2008)
  • Outstanding Special-Topic Evening Award, International Solid-State Circuits Conference (ISSCC) (2008)
  • Meritorious Paper Award, Government Microcircuit & Critical Technology Conference (2005)
  • Robert N. Noyce Faculty Scholar, Stanford University (2004-2005)
  • Sony Faculty Scholar, Stanford University (2010)
  • Early Career Professor Award, Agilent Technologies (2009)
  • Friedrich Wilhelm Bessel Research Award, Alexander von Humboldt Foundation (2012)
  • Distinguished Lecturer, IEEE Solid-State Circuits Society (2011-2012)
  • Fellow, IEEE (2015)

Program Affiliations


  • Stanford SystemX Alliance

Professional Education


  • PhD, UC Berkeley (2003)

Stanford Advisees


All Publications


  • Custom Sub-Systems and Circuits for Deep Learning: Guest Editorial Overview IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS Chen, C., Murmann, B., Seo, J., Yoo, H. 2019; 9 (2): 247–52
  • Multi-scale ordering in highly stretchable polymer semiconducting films NATURE MATERIALS Xu, J., Wu, H., Zhu, C., Ehrlich, A., Shaw, L., Nikolka, M., Wang, S., Molina-Lopez, F., Gu, X., Luo, S., Zhou, D., Kim, Y., Wang, G., Gu, K., Feig, V., Chen, S., Kim, Y., Katsumata, T., Zheng, Y., Yan, H., Chung, J., Lopez, J., Murmann, B., Bao, Z. 2019; 18 (6): 594-+
  • Multi-scale ordering in highly stretchable polymer semiconducting films. Nature materials Xu, J., Wu, H., Zhu, C., Ehrlich, A., Shaw, L., Nikolka, M., Wang, S., Molina-Lopez, F., Gu, X., Luo, S., Zhou, D., Kim, Y., Wang, G. N., Gu, K., Feig, V. R., Chen, S., Kim, Y., Katsumata, T., Zheng, Y., Yan, H., Chung, J. W., Lopez, J., Murmann, B., Bao, Z. 2019

    Abstract

    Stretchable semiconducting polymers have been developed as a key component to enable skin-like wearable electronics, but their electrical performance must be improved to enable more advanced functionalities. Here, we report a solution processing approach that can achieve multi-scale ordering and alignment of conjugated polymers in stretchable semiconductors to substantially improve their charge carrier mobility. Using solution shearing with a patterned microtrench coating blade, macroscale alignment of conjugated-polymer nanostructures was achieved along the charge transport direction. In conjunction, the nanoscale spatial confinement aligns chain conformation and promotes short-range pi-pi ordering, substantially reducing the energetic barrier for charge carrier transport. As a result, the mobilities of stretchable conjugated-polymer films have been enhanced up to threefold and maintained under a strain up to 100%. This method may also serve as the basis for large-area manufacturing of stretchable semiconducting films, as demonstrated by the roll-to-roll coating of metre-scale films.

    View details for PubMedID 30988452

  • Global Asymptotic Stability and Stabilization of Long Short-Term Memory Neural Networks with Constant Weights and Biases JOURNAL OF OPTIMIZATION THEORY AND APPLICATIONS Deka, S. A., Stipanovic, D. M., Murmann, B., Tomlin, C. J. 2019; 181 (1): 231–43
  • Low-Voltage, High-Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper ADVANCED ELECTRONIC MATERIALS Kraft, U., Zaki, T., Letzkus, F., Burghartz, J. N., Weber, E., Murmann, B., Klauk, H. 2019; 5 (2)
  • Toward Always-On Mobile Object Detection: Energy Versus Performance Tradeoffs for Embedded HOG Feature Extraction IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS FOR VIDEO TECHNOLOGY Omid-Zohoor, A., Young, C., Ta, D., Murmann, B. 2018; 28 (5): 1102–15
  • Skin electronics from scalable fabrication of an intrinsically stretchable transistor array NATURE Wang, S., Xu, J., Wang, W., Wang, G., Rastak, R., Molina-Lopez, F., Chung, J., Niu, S., Feig, V. R., Lopez, J., Lei, T., Kwon, S., Kim, Y., Foudeh, A. M., Ehrlich, A., Gasperini, A., Yun, Y., Murmann, B., Tok, J., Bao, Z. 2018; 555 (7694): 83-+

    Abstract

    Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable-like human skin-would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy: such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.

    View details for PubMedID 29466334

  • TRIG: Hardware Accelerator for Inference-Based Applications and Experimental Demonstration Using Carbon Nanotube FETs Hills, G., Bankman, D., Moons, B., Yang, L., Hillard, J., Kahng, A., Park, R., Verhelst, M., Murmann, B., Shulaker, M. M., Wong, H., Mitra, S., IEEE IEEE. 2018
  • A 7b 2 GS/s Time-Interleaved SAR ADC with Time Skew Calibration Based on Current Integrating Sampler Jiang, W., Zhu, Y., Chan, C., Murmann, B., U, S., Martins, R., IEEE IEEE. 2018: 235–38
  • Clock Synchronous Reset and Skew Calibration of 65GS/s ADCs in A Multi-Lane Coherent Receiver Athreya, S., Hedayati, H., Kazemkhani, S., Chen, Y., Vats, S., Scott, M. D., Zeydel, B., Keller, P., Wang, J., Avula, B., Murmann, B., Iroaga, E., IEEE IEEE. 2018: 250–53
  • An Always-On 3.8 mu J/86% CIFAR-10 Mixed-Signal Binary CNN Processor with All Memory on Chip in 28nm CMOS Bankman, D., Yang, L., Moons, B., Verhelst, M., Murmann, B., IEEE IEEE. 2018: 222-+
  • A 56 Gb/s 6 mW 300 um(2) inverter-based CTLE for short-reach PAM2 applications in 16 nm CMOS Zheng, K., Frans, Y., Chang, K., Murmann, B., IEEE IEEE. 2018
  • BinarEye: An Always-On Energy-Accuracy-Scalable Binary CNN Processor With All Memory On Chip In 28nm CMOS Moons, B., Bankman, D., Yang, L., Murmann, B., Verhelst, M., IEEE IEEE. 2018
  • A New Figure of Merit Equation for Analog-to-Digital Converters in CMOS Image Sensors Kwon, M., Murmann, B., IEEE IEEE. 2018
  • Some Local Stability Properties of an Autonomous Long Short-Term Memory Neural Network Model Stipanovic, D. M., Murmann, B., Causo, M., Lekic, A., Royo, V., Tomlin, C. J., Beigne, E., Thuries, S., Zarudniev, M., Lesecq, S., IEEE IEEE. 2018
  • Bit Error Tolerance of a CIFAR-10 Binarized Convolutional Neural Network Processor Yang, L., Bankman, D., Moons, B., Verhelst, M., Murmann, B., IEEE IEEE. 2018
  • A Mixer Front End for a Four-Channel Modulated Wideband Converter With 62-dB Blocker Rejection IEEE JOURNAL OF SOLID-STATE CIRCUITS Adams, D., Eldar, Y. C., Murmann, B. 2017; 52 (5): 1286-1294
  • A highly stretchable, transparent, and conductive polymer. Science advances Wang, Y., Zhu, C., Pfattner, R., Yan, H., Jin, L., Chen, S., Molina-Lopez, F., Lissel, F., Liu, J., Rabiah, N. I., Chen, Z., Chung, J. W., Linder, C., Toney, M. F., Murmann, B., Bao, Z. 2017; 3 (3)

    Abstract

    Previous breakthroughs in stretchable electronics stem from strain engineering and nanocomposite approaches. Routes toward intrinsically stretchable molecular materials remain scarce but, if successful, will enable simpler fabrication processes, such as direct printing and coating, mechanically robust devices, and more intimate contact with objects. We report a highly stretchable conducting polymer, realized with a range of enhancers that serve a dual function: (i) they change morphology and (ii) they act as conductivity-enhancing dopants in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The polymer films exhibit conductivities comparable to the best reported values for PEDOT:PSS, with over 3100 S/cm under 0% strain and over 4100 S/cm under 100% strain-among the highest for reported stretchable conductors. It is highly durable under cyclic loading, with the conductivity maintained at 3600 S/cm even after 1000 cycles to 100% strain. The conductivity remained above 100 S/cm under 600% strain, with a fracture strain of 800%, which is superior to even the best silver nanowire- or carbon nanotube-based stretchable conductor films. The combination of excellent electrical and mechanical properties allowed it to serve as interconnects for field-effect transistor arrays with a device density that is five times higher than typical lithographically patterned wavy interconnects.

    View details for DOI 10.1126/sciadv.1602076

    View details for PubMedID 28345040

  • A 14-Bit 30-MS/s 38-mW SAR ADC Using Noise Filter Gear Shifting IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS Kramer, M., Janssen, E., Doris, K., Murmann, B. 2017; 64 (2): 116-120
  • Highly stretchable polymer semiconductor films through the nanoconfinement effect SCIENCE Xu, J., Wang, S., Wang, G. N., Zhu, C., Luo, S., Jin, L., Gu, X., Chen, S., Feig, V. R., To, J. W., Rondeau-Gagne, S., Park, J., Schroeder, B. C., Lu, C., Oh, J. Y., Wang, Y., Kim, Y., Yan, H., Sinclair, R., Zhou, D., Xue, G., Murmann, B., Linder, C., Cai, W., Tok, J. B., Chung, J. W., Bao, Z. 2017; 355 (6320): 59-?

    Abstract

    Soft and conformable wearable electronics require stretchable semiconductors, but existing ones typically sacrifice charge transport mobility to achieve stretchability. We explore a concept based on the nanoconfinement of polymers to substantially improve the stretchability of polymer semiconductors, without affecting charge transport mobility. The increased polymer chain dynamics under nanoconfinement significantly reduces the modulus of the conjugated polymer and largely delays the onset of crack formation under strain. As a result, our fabricated semiconducting film can be stretched up to 100% strain without affecting mobility, retaining values comparable to that of amorphous silicon. The fully stretchable transistors exhibit high biaxial stretchability with minimal change in on current even when poked with a sharp object. We demonstrate a skinlike finger-wearable driver for a light-emitting diode.

    View details for DOI 10.1126/science.aah4496

    View details for PubMedID 28059762

  • LOGNET: ENERGY-EFFICIENT NEURAL NETWORKS USING LOGARITHMIC COMPUTATION Lee, E. H., Miyashita, D., Chai, E., Murmann, B., Wong, S., IEEE IEEE. 2017: 5900–5904
  • A Pixel Pitch-Matched Ultrasound Receiver for 3-D Photoacoustic Imaging With Integrated Delta-Sigma Beamformer in 28-nm UTBB FD-SOI. IEEE journal of solid-state circuits Chen, M. C., Perez, A. P., Kothapalli, S. R., Cathelin, P., Cathelin, A., Gambhir, S. S., Murmann, B. 2017; 52 (11): 2843–56

    Abstract

    This paper presents a pixel pitch-matched readout chip for 3-D photoacoustic (PA) imaging, featuring a dedicated signal conditioning and delta-sigma modulation integrated within a pixel area of 250 µm by 250 µm. The proof-of-concept receiver was implemented in an STMicroelectronics's 28-nm Fully Depleted Silicon On Insulator technology, and interfaces to a 4 × 4 subarray of capacitive micromachined ultrasound transducers (CMUTs). The front-end signal conditioning in each pixel employs a coarse/fine gain tuning architecture to fulfill the 90-dB dynamic range requirement of the application. The employed delta-sigma beamforming architecture obviates the need for area-consuming Nyquist ADCs and thereby enables an efficient in-pixel A/D conversion. The per-pixel switched-capacitor ΔΣ modulator leverages slewing-dominated and area-optimized inverter-based amplifiers. It occupies only 1/4th of the pixel, and its area compares favorably with state-of-the-art designs that offer the same SNR and bandwidth. The modulator's measured peak signal-to-noise-and-distortion ratio is 59.9 dB for a 10-MHz input bandwidth, and it consumes 6.65 mW from a 1-V supply. The overall subarray beamforming approach improves the area per channel by 7.4 times and the single-channel SNR by 8 dB compared to prior art with similar delay resolution and power dissipation. The functionality of the designed chip was evaluated within a PA imaging experiment, employing a flip-chip bonded 2-D CMUT array.

    View details for DOI 10.1109/JSSC.2017.2749425

    View details for PubMedID 31303662

    View details for PubMedCentralID PMC6625768

  • Investigating Limiting Factors in Stretchable All-Carbon Transistors for Reliable Stretchable Electronics. ACS nano Chortos, A., Zhu, C., Oh, J. Y., Yan, X., Pochorovski, I., To, J. W., Liu, N., Kraft, U., Murmann, B., Bao, Z. 2017; 11 (8): 7925–37

    Abstract

    Stretchable form factors enable electronic devices to conform to irregular 3D structures, including soft and moving entities. Intrinsically stretchable devices have potential advantages of high surface coverage of active devices, improved durability, and reduced processing costs. This work describes intrinsically stretchable transistors composed of single-walled carbon nanotube (SWNT) electrodes and semiconductors and a dielectric that consists of a nonpolar elastomer. The use of a nonpolar elastomer dielectric enabled hysteresis-free device characteristics. Compared to devices on SiO2 dielectrics, stretchable devices with nonpolar dielectrics showed lower mobility in ambient conditions because of the absence of doping from water. The effect of a SWNT band gap on device characteristics was investigated by using different SWNT sources as the semiconductor. Large-band-gap SWNTs exhibited trap-limited behavior caused by the low capacitance of the dielectric. In contrast, high-current devices based on SWNTs with smaller band gaps were more limited by contact resistance. Of the tested SWNT sources, SWNTs with a maximum diameter of 1.5 nm performed the best, with a mobility of 15.4 cm2/Vs and an on/off ratio >103 for stretchable transistors. Large-band-gap devices showed increased sensitivity to strain because of a pronounced dependence on the dielectric thickness, whereas contact-limited devices showed substantially less strain dependence.

    View details for PubMedID 28745872

  • Active control of probability amplitudes in a mesoscale system via feedback-induced suppression of dissipation and noise JOURNAL OF APPLIED PHYSICS Gupta, C., Perez, A. P., Fischer, S. R., Weinreich, S. B., Murmann, B., Howe, R. T. 2016; 120 (22)

    View details for DOI 10.1063/1.4971867

    View details for Web of Science ID 000391535900013

  • The Successive Approximation Register ADC: A Versatile Building Block for Ultra-Low-Power to Ultra-High-Speed Applications IEEE COMMUNICATIONS MAGAZINE Murmann, B. 2016; 54 (4): 78-83
  • A 14 b 35 MS/s SAR ADC Achieving 75 dB SNDR and 99 dB SFDR With Loop-Embedded Input Buffer in 40 nm CMOS IEEE JOURNAL OF SOLID-STATE CIRCUITS Kramer, M. J., Janssen, E., Doris, K., Murmann, B. 2015; 50 (12): 2891-2900
  • Passive charge redistribution digital-to-analogue multiplier ELECTRONICS LETTERS Bankman, D., Murmann, B. 2015; 51 (5): 387-388
  • A Closed-Loop Reconfigurable Switched-Capacitor DC-DC Converter for Sub-mW Energy Harvesting Applications IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Vaisband, I., Saadat, M., Murmann, B. 2015; 62 (2): 385-394
  • Mismatch Characterization of Small Metal Fringe Capacitors IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Tripathi, V., Murmann, B. 2014; 61 (8): 2236-2242
  • A Four-Channel, +/- 36 V, 780 kHz Piezo Driver Chip for Structural Health Monitoring IEEE JOURNAL OF SOLID-STATE CIRCUITS Guo, Y., Aquino, C., Zhang, D., Murmann, B. 2014; 49 (7): 1506-1513
  • Static Integral Nonlinearity Modeling and Calibration of Measured and Synthetic Pipeline Analog-to-Digital Converters IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT Medawar, S., Murmann, B., Handel, P., Bjorsell, N., Jansson, M. 2014; 63 (3): 502-511
  • Design and Optimization of Continuous-Time Filters Using Geometric Programming IEEE International Symposium on Circuits and Systems (ISCAS) Seth, S., Murmann, B. IEEE. 2014: 2089–2092
  • A 160 MS/s, 11.1 mW, Single-Channel Pipelined SAR ADC with 68.3 dB SNDR 36th Annual IEEE Custom Integrated Circuits Conference (CICC) - The Showcase for Integrated Circuit Design in the Heart of Silicon Valley Tripathi, V., Murmann, B. IEEE. 2014
  • Low-Rate Identification of Memory Polynomials IEEE International Symposium on Circuits and Systems (ISCAS) Hammler, N., Eldar, Y. C., Murmann, B. IEEE. 2014: 1034–1037
  • Dynamic Calibration of Undersampled Pipelined ADCs by Frequency Domain Filtering IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT Medawar, S., Handel, P., Murmann, B., Bjorsell, N., Jansson, M. 2013; 62 (7): 1882-1891
  • Settling Time and Noise Optimization of a Three-Stage Operational Transconductance Amplifier IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Seth, S., Murmann, B. 2013; 60 (5): 1168-1174
  • A 256 Pixel Magnetoresistive Biosensor Microarray in 0.18 mu m CMOS IEEE Radio Frequency Integrated Circuits (RFIC) Symposium in Conjunction with the IEEE MTT-S International Microwave Symposium (IMS) / Microwave Week Hall, D. A., Gaster, R. S., Makinwa, K. A., Wang, S. X., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2013: 1290–1301

    Abstract

    Magnetic nanotechnologies have shown significant potential in several areas of nanomedicine such as imaging, therapeutics, and early disease detection. Giant magnetoresistive spin-valve (GMR SV) sensors coupled with magnetic nanotags (MNTs) possess great promise as ultra-sensitive biosensors for diagnostics. We report an integrated sensor interface for an array of 256 GMR SV biosensors designed in 0.18 μm CMOS. Arranged like an imager, each of the 16 column level readout channels contains an analog front- end and a compact ΣΔ modulator (0.054 mm2) with 84 dB of dynamic range and an input referred noise of 49 nT/√Hz. Performance is demonstrated through detection of an ovarian cancer biomarker, secretory leukocyte peptidase inhibitor (SLPI), spiked at concentrations as low as 10 fM. This system is designed as a replacement for optical protein microarrays while also providing real-time kinetics monitoring.

    View details for DOI 10.1109/JSSC.2013.2245058

    View details for Web of Science ID 000320936300016

    View details for PubMedCentralID PMC3993911

  • A Delta Sigma Interface for MEMS Accelerometers Using Electrostatic Spring Constant Modulation for Cancellation of Bondwire Capacitance Drift IEEE International Solid-State Circuits Conference (ISSCC) Lajevardi, P., Petkov, V. P., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2013: 265–75
  • A 256 pixel magnetoresistive biosensor microarray in 0.18μm CMOS. IEEE journal of solid-state circuits Hall, D. A., Gaster, R. S., Makinwa, K., Wang, S. X., Murmann, B. 2013; 48 (5): 1290–1301

    Abstract

    Magnetic nanotechnologies have shown significant potential in several areas of nanomedicine such as imaging, therapeutics, and early disease detection. Giant magnetoresistive spin-valve (GMR SV) sensors coupled with magnetic nanotags (MNTs) possess great promise as ultra-sensitive biosensors for diagnostics. We report an integrated sensor interface for an array of 256 GMR SV biosensors designed in 0.18 μm CMOS. Arranged like an imager, each of the 16 column level readout channels contains an analog front- end and a compact ΣΔ modulator (0.054 mm2) with 84 dB of dynamic range and an input referred noise of 49 nT/√Hz. Performance is demonstrated through detection of an ovarian cancer biomarker, secretory leukocyte peptidase inhibitor (SLPI), spiked at concentrations as low as 10 fM. This system is designed as a replacement for optical protein microarrays while also providing real-time kinetics monitoring.

    View details for PubMedID 24761029

  • Mismatch Characterization of Small Metal Fringe Capacitors 35th Annual IEEE Custom Integrated Circuits Conference (CICC) - The Showcase for Circuit Design in the Heart of Silicon Valley Tripathi, V., Murmann, B. IEEE. 2013
  • Energy Limits in A/D Converters IEEE Faible Tension Faible Consommation Conference (FTFC) Murmann, B. IEEE. 2013
  • A/D Converter Circuit and Architecture Design for High-Speed Data Communication 35th Annual IEEE Custom Integrated Circuits Conference (CICC) - The Showcase for Circuit Design in the Heart of Silicon Valley Murmann, B. IEEE. 2013
  • Integrated Piezo-Element Drive Electronics for Structural Health Monitoring 8th International Workshop on Structural Health Monitoring Guo, Y., Murmann, B. DESTECH PUBLICATIONS, INC. 2013: 1724–1731
  • A Four-Channel, +/- 36 V Piezo Driver Chip for a Densely Integrated SHM System 9th International Workshop on Structural Health Monitoring (IWSHM) Guo, Y., Aquino, C., Zhang, D., Murmann, B. DESTECH PUBLICATIONS, INC. 2013: 1551–1558
  • High-Performance Pipelined ADCs for Wireless Infrastructure Systems Advances in Analog and RF IC Design for Wireless Communication Systems Elliott, M., Murmann, B. edited by Manganaro, G., Leenaerts, D.M., W. Elsevier. 2013
  • A Four-Channel, ±36 V, 780 kHz Piezo Driver Chip for Structural Health Monitoring Guo, Y., Aquino, C., Zhang, D., Murmann, B. 2013
  • Static Integral Nonlinearity Modeling and Calibration of Measured and Synthetic Pipeline Analog-Digital Converters to appear, IEEE Trans. Instrum. Meas. Medawar, S., Murmann, B., Handel, P., Bjorsell, N., Jansson, M. 2013
  • Dynamic Calibration of Undersampled Pipelined ADCs by Frequency Domain Filtering IEEE Trans. Instrum. Meas. Medawar, S., Händel, P., Murmann, B., Björsell, N., Jansson, M. 2013; 62 (7): 1882-1891
  • A ΣΔ Interface for MEMS Accelerometers using Electrostatic Spring-Constant Modulation for Cancellation of Bondwire Capacitance Drift IEEE J. Solid-State Circuits Lajevardi, P., Petkov, V., P., Murmann, B. 2013; 48 (1): 265-275
  • A 256 Pixel Magnetoresistive Biosensor Microarray in 0.18 µm CMOS IEEE J. Solid-State Circuits Hall, D., A., Gaster, R., S., Makinwa, K.A., A., Wang, S., X., Murmann, B. 2013; 48 (5): 1290-1301
  • On the use of redundancy in successive approximation A/D converters Murmann, B. 2013
  • Mismatch Characterization of Small Metal Fringe Capacitors Tripathi, V., Murmann, B. 2013
  • Integrated Piezo-Element Drive Electronics for Structural Health Monitoring Guo, Y., Aquino, C., Zhang, D., Murmann, B. 2013
  • Energy limits in A/D converters Murmann, B. 2013
  • A/D Converter Circuit and Architecture Design for High-Speed Data Communication Murmann, B. 2013
  • A 12-Bit, 200-MS/s, 11.5-mW Pipeline ADC Using a Pulsed Bucket Brigade Front-End Dolev, N., Kramer, M., Murmann, B. 2013
  • A 0.11mm^2, 5.7-to-6.7GHz, Parametrically Pumped Quadrature LC-VCO with Digital Outputs Bhardwaj, K., Seth, S., Murmann, B., Lee, T., H. 2013
  • Analysis and Design of Elementary MOS Amplifier Stages Murmann, B. NTS Press. 2013
  • An 8-bit 450-MS/s Single-Bit/Cycle SAR ADC in 65-nm CMOS Tripathi, V., Murmann, B. 2013
  • Digitally Assisted Data Converter Design Murmann, B. 2013
  • A 12-b, 30-MS/s, 2.95-mW Pipelined ADC Using Single-Stage Class-AB Amplifiers and Deterministic Background Calibration IEEE JOURNAL OF SOLID-STATE CIRCUITS Kim, J. K., Murmann, B. 2012; 47 (9): 2141-2151
  • Engineering the metal gate electrode for controlling the threshold voltage of organic transistors APPLIED PHYSICS LETTERS Chung, Y., Johnson, O., Deal, M., Nishi, Y., Murmann, B., Bao, Z. 2012; 101 (6)

    View details for DOI 10.1063/1.4739511

    View details for Web of Science ID 000307862400089

  • HermesE: A 96-Channel Full Data Rate Direct Neural Interface in 0.13 mu m CMOS IEEE JOURNAL OF SOLID-STATE CIRCUITS Gao, H., Walker, R. M., Nuyujukian, P., Makinwa, K. A., Shenoy, K. V., Murmann, B., Meng, T. H. 2012; 47 (4): 1043-1055
  • Area scaling analysis of CMOS ADCs ELECTRONICS LETTERS Verhelst, M., Murmann, B. 2012; 48 (6): 314-U70
  • Mismatch of lateral field metal-oxide-metal capacitors in 180 nm CMOS process ELECTRONICS LETTERS Abusleme, A., Dragone, A., Haller, G., Murmann, B. 2012; 48 (5): 286-U1588
  • Micro-imprinted prism substrate for self-aligned short channel organic transistors on a flexible substrate APPLIED PHYSICS LETTERS Jeon, J., Tee, B. C., Murmann, B., Bao, Z. 2012; 100 (4)

    View details for DOI 10.1063/1.3679119

    View details for Web of Science ID 000300064500064

  • Electrochemical quantum tunneling for electronic detection and characterization of biological toxins Conference on Micro- and Nanotechnology Sensors, Systems, and Applications IV Gupta, C., Walker, R. M., Gharpuray, R., Shulaker, M. M., Zhang, Z., Javanmard, M., Davis, R. W., Murmann, B., Howe, R. T. SPIE-INT SOC OPTICAL ENGINEERING. 2012

    View details for DOI 10.1117/12.920692

    View details for Web of Science ID 000306560400002

  • Analog-Digital Interfaces CHIPS 2020 Keller, M., Murmann, B., Manoli, Y. edited by Hoefflinger, B. Springer. 2012
  • A -131-dBc/Hz, 20-MHz MEMS Oscillator with a 6.9-mW, 69-kOhm, Gain-Tunable CMOS TIA Seth, S., Wang, S., Kenny, T., Murmann, B. 2012
  • Thermal Noise in Track-and-Hold Circuits: Analysis and Simulation Techniques IEEE Solid-State Circuits Magazine Murmann, B. 2012; 4 (2): 46-54
  • A ΣΔ Interface for MEMS Accelerometers using Electrostatic Spring-Constant Modulation for Cancellation of Bondwire Capacitance Drift in ISSCC Dig. Tech. Papers Lajevardi, P., Petkov, V., P., Murmann, B. 2012: 196-197
  • A 12-bit, 30-MS/s, 2.95-mW Pipelined ADC Using Single-Stage Class-AB Amplifiers and Deterministic Background Calibration IEEE J. Solid-State Circuits Kim, J., Murmann, B. 2012; 47 (9): 2141-2151
  • TOWARDS AN INTEGRATED CIRCUIT DESIGN OF A COMPRESSSED SAMPLING WIRELESS RECEIVER IEEE International Conference on Acoustics, Speech and Signal Processing Adams, D., Park, C. S., Eldar, Y. C., Murmann, B. IEEE. 2012: 5305–5308
  • Settling Time and Noise Optimization of a Three-Stage Operational Transconductance Amplifier IEEE International Symposium on Circuits and Systems Seth, S., Murmann, B. IEEE. 2012: 205–208
  • A 12-GS/s 81-mW 5-bit Time-Interleaved Flash ADC With Background Timing Skew Calibration IEEE JOURNAL OF SOLID-STATE CIRCUITS El-Chammas, M., Murmann, B. 2011; 46 (4): 838-847
  • Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors NANO LETTERS Chung, Y., Verploegen, E., Vailionis, A., Sun, Y., Nishi, Y., Murmann, B., Bao, Z. 2011; 11 (3): 1161-1165

    Abstract

    We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.

    View details for DOI 10.1021/nl104087u

    View details for Web of Science ID 000288061500043

    View details for PubMedID 21323381

  • Design Optimization of High-Speed and Low-Power Operational Transconductance Amplifier Using g(m)/I-D Lookup Table Methodology IEICE TRANSACTIONS ON ELECTRONICS Konishi, T., Inazu, K., Lee, J. G., Natsui, M., Masui, S., Murmann, B. 2011; E94C (3): 334-345
  • Feedforward Interference Cancellation Architecture for Short-Range Wireless Communication IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS Hori, S., Murmann, B. 2011; 58 (1): 16-20
  • Low-Power Pipelined A/D Conversion Analog Circuit Design Murmann, B. edited by Steyaert, M., Roermund, A.H., M., Baschirotto, A. Springer. 2011
  • A 256 Channel Magnetoresistive Biosensor Microarray for Quantitative Proteomics Hall, D., A., Gaster, R., S., Osterfeld, S., J., Makinwa, K., Wang, S., X., Murmann, B. 2011
  • Integrated Piezo-element Drive Electronics for Structural Health Monitoring Guo, Y., Murmann, B. 2011
  • A Continuous-Time, Jitter Insensitive ∑∆ Modulator Using a Digitally Linearized Gm-C Integrator with Embedded SC Feedback DAC Kim, D., Matsuura, T., Murmann, B. 2011
  • A 96-Channel Full Data Rate Direct Neural Interface in 0.13µm CMOS Walker, R., M., Gao, H., Nuyujukian, P., Makinwa, K., Shenoy, K., V., Meng, T., Murmann, B. 2011
  • A 6.7-ENOB, 500-MS/s, 5.1-mW Dynamic Pipeline ADC in 65-nm SOI CMOS Nguyen, R., Raynaud, C., Cathelin, A., Murmann, B. 2011
  • Background Calibration of Timing Skew in Time-Interleaved A/D Converters International Conference on Sampling Theory and Applications (SampTA) Murmann, B., El-Chammas, M. 2011
  • Introduction to the Special Issue on the 2010 IEEE International Solid-State Circuits Conference IEEE JOURNAL OF SOLID-STATE CIRCUITS Cho, G., Murmann, B., Halonen, K., Gharpurey, R., Sim, J. 2010; 45 (12): 2505-2509
  • Full-Swing and High-Gain Pentacene Logic Circuits on Plastic Substrate IEEE ELECTRON DEVICE LETTERS Jeon, J., Murmann, B., Bao, Z. 2010; 31 (12): 1488-1490
  • A 3-V, 6-Bit C-2C Digital-to-Analog Converter Using Complementary Organic Thin-Film Transistors on Glass IEEE JOURNAL OF SOLID-STATE CIRCUITS Xiong, W., Guo, Y., Zschieschang, U., Klauk, H., Murmann, B. 2010; 45 (7): 1380-1388
  • The Design of Fast-Settling Three-Stage Amplifiers Using the Open-Loop Damping Factor as a Design Parameter IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Nguyen, R., Murmann, B. 2010; 57 (6): 1244-1254
  • Trends in Low-Power, Digitally Assisted A/D Conversion IEICE TRANSACTIONS ON ELECTRONICS Murmann, B. 2010; E93C (6): 718-729
  • GMR biosensor arrays: Correction techniques for reproducibility and enhanced sensitivity BIOSENSORS & BIOELECTRONICS Hall, D. A., Gaster, R. S., Osterfeld, S. J., Murmann, B., Wang, S. X. 2010; 25 (9): 2177-2181

    Abstract

    Giant magnetoresistive biosensors possess great potential in biomedical applications for quantitatively detecting magnetically tagged biomolecules. Magnetic sensing does not suffer from the high background levels found in optical sensing modalities such as the enzyme linked immunosorbent assay translating into a technology with higher sensitivity. However, to reveal the full potential of these sensors and compensate for non-idealities such as temperature dependence, digital correction and calibration techniques are not only useful but imperative. Using these calibration techniques to correct for process variations and dynamic changes in the sensing environment (such as temperature and magnetic field), we are able to obtain extremely sensitive and, more importantly, reproducible results for quantifiable biomolecular reorganization. The reproducibility of the system was improved by over 3 x using digital correction techniques and the sensors are made temperature independent by using a novel background correction technique.

    View details for DOI 10.1016/j.bios.2010.01.039

    View details for Web of Science ID 000277930000029

    View details for PubMedID 20219342

    View details for PubMedCentralID PMC2881564

  • GMR biosensor arrays: A system perspective BIOSENSORS & BIOELECTRONICS Hall, D. A., Gaster, R. S., Lin, T., Osterfeld, S. J., Han, S., Murmann, B., Wang, S. X. 2010; 25 (9): 2051-2057

    Abstract

    Giant magnetoresistive biosensors are becoming more prevalent for sensitive, quantifiable biomolecular detection. However, in order for magnetic biosensing to become competitive with current optical protein microarray technology, there is a need to increase the number of sensors while maintaining the high sensitivity and fast readout time characteristic of smaller arrays (1-8 sensors). In this paper, we present a circuit architecture scalable for larger sensor arrays (64 individually addressable sensors) while maintaining a high readout rate (scanning the entire array in less than 4s). The system utilizes both time domain multiplexing and frequency domain multiplexing in order to achieve this scan rate. For the implementation, we propose a new circuit architecture that does not use a classical Wheatstone bridge to measure the small change in resistance of the sensor. Instead, an architecture designed around a transimpedance amplifier is employed. A detailed analysis of this architecture including the noise, distortion, and potential sources of errors is presented, followed by a global optimization strategy for the entire system comprising the magnetic tags, sensors, and interface electronics. To demonstrate the sensitivity, quantifiable detection of two blindly spiked samples of unknown concentrations has been performed at concentrations below the limit of detection for the enzyme-linked immunosorbent assay. Lastly, the multiplexing capability and reproducibility of the system was demonstrated by simultaneously monitoring sensors functionalized with three unique proteins at different concentrations in real-time.

    View details for DOI 10.1016/j.bios.2010.01.038

    View details for Web of Science ID 000277930000009

    View details for PubMedID 20207130

    View details for PubMedCentralID PMC2855856

  • Low-voltage and short-channel pentacene field-effect transistors with top-contact geometry using parylene-C shadow masks APPLIED PHYSICS LETTERS Chung, Y., Murmann, B., Selvarasah, S., Dokmeci, M. R., Bao, Z. 2010; 96 (13)

    View details for DOI 10.1063/1.3336009

    View details for Web of Science ID 000276275300063

  • Portable Biomarker Detection with Magnetic Nanotags International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010) Hall, D. A., Wang, S. X., Murmann, B., Gaster, R. S. IEEE. 2010: 1779–82

    Abstract

    This paper presents a hand-held, portable biosensor platform for quantitative biomarker measurement. By combining magnetic nanoparticle (MNP) tags with giant magnetoresistive (GMR) spin-valve sensors, the hand-held platform achieves highly sensitive (picomolar) and specific biomarker detection in less than 20 minutes. The rapid analysis and potential low cost make this technology ideal for point-of-care (POC) diagnostics. Furthermore, this platform is able to detect multiple biomarkers simultaneously in a single assay, creating a promising diagnostic tool for a vast number of applications.

    View details for Web of Science ID 000287216002001

    View details for PubMedCentralID PMC3321410

  • Portable Biomarker Detection with Magnetic Nanotags. The ... Midwest Symposium on Circuits and Systems conference proceedings : MWSCAS. Midwest Symposium on Circuits and Systems Hall, D. A., Wang, S. X., Murmann, B., Gaster, R. S. 2010: 1779–82

    Abstract

    This paper presents a hand-held, portable biosensor platform for quantitative biomarker measurement. By combining magnetic nanoparticle (MNP) tags with giant magnetoresistive (GMR) spin-valve sensors, the hand-held platform achieves highly sensitive (picomolar) and specific biomarker detection in less than 20 minutes. The rapid analysis and potential low cost make this technology ideal for point-of-care (POC) diagnostics. Furthermore, this platform is able to detect multiple biomarkers simultaneously in a single assay, creating a promising diagnostic tool for a vast number of applications.

    View details for PubMedID 22495252

  • A 12-bit 800-MS/s switched-capacitor DAC with open-loop output driver and digital predistortion Daigle, C., Dastgheib, A., Murmann, B. 2010
  • A 3V 6b successive-approximation ADC using complementary organic thin-film transistors on glass ISSCC Dig. Tech. Papers Xiong, W., Zschieschang, U., Murmann, B. 2010: 134-135
  • A 12-bit, 30-MS/s, 2.95-mW pipelined ADC using single-stage class-AB amplifiers and deterministic background calibration Kim, J., Murmann, B. 2010
  • Design of Analog Circuits Using Organic Field-Effect Transistors IEEE and ACM International Conference on Computer-Aided Design Murmann, B., Xiong, W. IEEE. 2010: 504–507
  • A 12-GS/s81-mW 5-bit Time-Interleaved Flash ADC with Background Timing Skew Calibration Symposium on VLSI Circuits El-Chammas, M., Murmann, B. IEEE. 2010: 157–158
  • Matrix-insensitive protein assays push the limits of biosensors in medicine NATURE MEDICINE Gaster, R. S., Hall, D. A., Nielsen, C. H., Osterfeld, S. J., Yu, H., Mach, K. E., Wilson, R. J., Murmann, B., Liao, J. C., Gambhir, S. S., Wang, S. X. 2009; 15 (11): 1327-U130

    Abstract

    Advances in biosensor technologies for in vitro diagnostics have the potential to transform the practice of medicine. Despite considerable work in the biosensor field, there is still no general sensing platform that can be ubiquitously applied to detect the constellation of biomolecules in diverse clinical samples (for example, serum, urine, cell lysates or saliva) with high sensitivity and large linear dynamic range. A major limitation confounding other technologies is signal distortion that occurs in various matrices due to heterogeneity in ionic strength, pH, temperature and autofluorescence. Here we present a magnetic nanosensor technology that is matrix insensitive yet still capable of rapid, multiplex protein detection with resolution down to attomolar concentrations and extensive linear dynamic range. The matrix insensitivity of our platform to various media demonstrates that our magnetic nanosensor technology can be directly applied to a variety of settings such as molecular biology, clinical diagnostics and biodefense.

    View details for DOI 10.1038/nm.2032

    View details for Web of Science ID 000271543700023

    View details for PubMedID 19820717

  • Digital Compensation of Dynamic Acquisition Errors at the Front-End of High-Performance A/D Converters IEEE JOURNAL OF SELECTED TOPICS IN SIGNAL PROCESSING Nikaeen, P., Murmann, B. 2009; 3 (3): 499-508
  • General Analysis on the Impact of Phase-Skew in Time-Interleaved ADCs IEEE International Symposium on Circuits and Systems El-Chammas, M., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2009: 902–10
  • A 9.4-bit, 50-MS/s, 1.44-mW Pipelined ADC Using Dynamic Source Follower Residue Amplification IEEE Symposium on VLSI Circuits Hu, J., Dolev, N., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2009: 1057–66
  • Power Dissipation Bounds for High-Speed Nyquist Analog-to-Digital Converters IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Sundstrom, T., Murmann, B., Svensson, C. 2009; 56 (3): 509-518
  • PHASE LOCK LOOP BASED TEMPERATURE COMPENSATION FOR MEMS OSCILLATORS 22nd International Conference on Micro Electro Mechanical Systems (MEMS) Salvia, J., Melamud, R., Chandorkar, S., Lee, H. K., Qu, Y. Q., Lord, S. F., Murmann, B., Kenny, T. W. IEEE. 2009: 661–664
  • Phase Lock Loop based Temperature Compensation for MEMS Oscillators Salvia, J., Melamud, R., Chandorkar, S., Lee, H., Qu, Y., Lord, S., Murmann, B. 2009
  • A 3-V, 6-bit C-2C digital-to-analog converter using complementary organic thin-film transistors on glass Xiong, W., Guo, Y., Zschieschang, U., Klauk, H., Murmann, B. 2009
  • A 56M Omega CMOS TIA for MEMS Applications IEEE Custom Integrated Circuits Conference Salvia, J., Lajevardi, P., Hekmat, M., Murmann, B. IEEE. 2009: 199–202
  • A 3-V, 6-bit C-2C Digital-to-Analog Converter using Complementary Organic Thin-Film Transistors on Glass 35th European Solid-State Circuits Conference (ESSCIRC 2009) Xiong, W., Guo, Y., Murmann, B., Zschieschang, U., Klauk, H. IEEE. 2009: 213–216
  • Calculation of Total Integrated Noise in Analog Circuits IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Dastgheib, A., Murmann, B. 2008; 55 (10): 2988-2993
  • A study of electrostatic force nonlinearities in resonant microstructures APPLIED PHYSICS LETTERS Agarwal, M., Chandorkar, S. A., Mehta, H., Candler, R. N., Kim, B., Hopcroft, M. A., Melamud, R., Jha, C. M., Bahl, G., Yama, G., Kenny, T. W., Murmann, B. 2008; 92 (10)

    View details for DOI 10.1063/1.2834707

    View details for Web of Science ID 000253989300168

  • A 9.4-bit, 50-MS/s, 1.44-mW pipelined ADC using dynamic residue amplification IEEE Symposium on VLSI Circuits Hu, J., Dolev, N., Murmann, B. IEEE. 2008: 169–170
  • Digital correction of dynamic track-and-hold errors providing SFDR > 83 dB up to fin = 470 MHz Nikaeen, P., Murmann, B. 2008
  • Hybrid integration of bandgap reference circuits using silicon ICs and germanium devices 9th International Symposium on Quality Electronic Design Kim, J. W., Murmann, B., Dutton, R. W. IEEE COMPUTER SOC. 2008: 429–432
  • A/D Converter Trends: Power Dissipation, Scaling and Digitally Assisted Architectures IEEE Custom Integrated Circuits Conference Murmann, B. IEEE. 2008: 105–112
  • Characterizing the impact of substrate noise on high-speed flash ADCs 9th International Symposium on Quality Electronic Design Nikaeen, P., Murmann, B., Dutton, R. W. IEEE COMPUTER SOC. 2008: 396–400
  • General analysis on the impact of phase-skew in time-interleaved ADCs IEEE International Symposium on Circuits and Systems El-Chammas, M., Murmann, B. IEEE. 2008: 17–20
  • A 9.4-bit, 50-MS/s, 1.44-mW pipelined ADC using dynamic residue amplification IEEE Symposium on VLSI Circuits Hu, J., Dolev, N., Murmann, B. IEEE. 2008: 216–217
  • Predictive control algorithm for phase-locked loops IEEE International Symposium on Circuits and Systems Abusleme, A., Murmann, B. IEEE. 2008: 1528–1531
  • Digitally enhanced analog circuits: System aspects IEEE International Symposium on Circuits and Systems Murmann, B., Vogel, C., Koeppl, H. IEEE. 2008: 560–563
  • Exploring the Limits and Practicality of Q-based Temperature Compensation for Silicon Resonators IEEE International Electron Devices Meeting Salvia, J., Messana, M., Ohline, M., Hopcroft, M. A., Melamud, R., Chandorkar, S., Lee, H. K., Bahl, G., Murmann, B., Kenny, T. W. IEEE. 2008: 671–674
  • Digital domain measurement and cancellation of residue amplifier nonlinearity in pipelined ADCs IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT Murmann, B., Boser, B. E. 2007; 56 (6): 2504-2514
  • Scaling of amplitude-frequency-dependence nonlinearities in electrostatically transduced microresonators JOURNAL OF APPLIED PHYSICS Agarwal, M., Mehta, H., Candler, R. N., Chandorkar, S. A., Kim, B., Hopcroft, M. A., Melamud, R., Bahl, G., Yama, G., Kenny, T. W., Murmann, B. 2007; 102 (7)

    View details for DOI 10.1063/1.2785018

    View details for Web of Science ID 000250147700148

  • A 12-bit 75-MS/s pipelined ADC using incomplete settling Symposium on VLSI Circuits Iroaga, E., Murmann, B. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2007: 748–56
  • Impact of miniaturization on the current handling of electrostatic MEMS resonators 20th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2007) Agarwal, M., Mehta, H., Candler, R. N., Chandorkar, S. A., Kim, B., Hopicroft, M. A., Melamud, R., Bahl, G., Yama, G., Kenny, T. W., Murmann, B. IEEE. 2007: 530–533
  • A High-Density Magnetoresistive Biosensor Array with Drift-Compensation Mechanism ISSCC Dig. Tech. Papers Han, S., Yu, H., Murmann, B., Pourmand, N., Wang, S. 2007: 168-594
  • A low-power, 6-bit time-interleaved SAR ADC using OFDM pilot tone calibration IEEE Custom Integrated Circuits Conference Oh, Y., Murmann, B. IEEE. 2007: 193–196
  • Acceleration sensitivity in beam-type electrostatic microresonators APPLIED PHYSICS LETTERS Agarwal, M., Park, K. K., Chandorkar, S. A., Candler, R. N., Kim, B., Hopcroft, M. A., Melamud, R., Kenny, T. W., Murmann, B. 2007; 90 (1)

    View details for DOI 10.1063/1.2426884

    View details for Web of Science ID 000243379900112

  • An analysis of latch comparator offset due to load capacitor mismatch IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS Nikoozadeh, A., Murmann, B. 2006; 53 (12): 1398-1402
  • Optimal drive condition for nonlinearity reduction in electrostatic microresonators APPLIED PHYSICS LETTERS Agarwal, M., Chandorkar, S. A., Candler, R. N., Kim, B., Hopcroft, M. A., Melamud, R., Jha, C. M., Kenny, T. W., Murmann, B. 2006; 89 (21)

    View details for DOI 10.1063/1.2388886

    View details for Web of Science ID 000242220000087

  • Analysis and measurement of signal distortion due to ESD protection circuits IEEE JOURNAL OF SOLID-STATE CIRCUITS Chun, J., Murmann, B. 2006; 41 (10): 2354-2358
  • Impact of scaling on analog performance and associated modeling needs IEEE TRANSACTIONS ON ELECTRON DEVICES Murmann, B., Nikaeen, P., Connelly, D. J., Dutton, R. W. 2006; 53 (9): 2160-2167
  • System embedded ADC calibration for OFDM receivers IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Oh, Y., Murmann, B. 2006; 53 (8): 1693-1703
  • Digitally assisted analog circuits Hot Chips 17 Conference Murmann, B. IEEE COMPUTER SOC. 2006: 38–47
  • Nonlinear characterization of electrostatic MEMS resonators IEEE International Frequency Control Symposium and Exposition Agarwal, M., Park, K. K., Candler, R. N., Kim, B., Hopcroft, M. A., Chandorkar, S. A., Jha, C. M., Melamud, R., Kenny, T. W., Murmann, B. IEEE. 2006: 209–212
  • A 12b, 75MS/s Pipelined ADC Using Incomplete Settling Iroaga, E., Murmann, B. 2006
  • 4.25 Gb/s laser driver: Design challenges and EDA tool limitations 43rd Design Automation Conference Sheahan, B., Fattaruso, J. W., Wong, J., Muth, K., Murmann, B. ASSOC COMPUTING MACHINERY. 2006: 863–866
  • Limits on ADC power dissipation 14th Workshop on Advances in Analog Circuit Design Murmann, B. SPRINGER. 2006: 351–367
  • Effects of mechanical vibrations and bias voltage noise on phase noise of MEMS resonator based oscillators 19th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2006) Agarwal, M., Park, K. K., Hopcroft, M., Chandorkar, S., Candler, R. N., Kim, B., Melamud, R., Yama, G., Murmann, B., Kenny, T. W. IEEE. 2006: 154–157
  • Temperature compensation of a MEMS resonator using quality factor as a thermometer 19th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2006) Hopcroft, M. A., Agarwal, M., Park, K. K., Kim, B., Jha, C. M., Candler, R. N., Yama, G., Murmann, B., Kenny, T. W. IEEE. 2006: 222–225
  • Non-linearity cancellation in MEMS resonators for improved power-handling IEEE International Electron Devices Meeting Agarwal, M., Park, K., Candler, R., Hopcroft, M., Jha, C., Melamud, R., Kim, B., Murmann, B., Kenny, T. W. IEEE. 2005: 295–298
  • A background correction technique for timing errors in time-interleaved analog-to-digital converters. IEEE International Symposium on Circuits and Systems (ISCAS) Iroaga, E., Murmann, B., Nathawad, L. IEEE. 2005: 5557–5560
  • A low-power distributed wide-band LNA in 0.18 mu m CMOS IEEE International Symposium on Circuits and Systems (ISCAS) Arekapudi, S., Iroaga, E., Murmann, B. IEEE. 2005: 5055–5058
  • A/D Conversion gets a Digital Assist EE Times Murmann, B. 2004
  • Digitally Assisted Analog Integrated Circuits ACM Queue Murmann, B., Boser, B. 2004; 2 (1): 64-71
  • A 12-bit 75-MS/s pipelined ADC using open-loop residue amplification IEEE International Solid-State Circuits Conference Murmann, B., Boser, B. E. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 2040–50
  • A 12b 75MS/s pipelined ADC using open-loop residue amplification IEEE International Solid-State Circuits Conference Murmann, B., Boser, B. E. IEEE. 2003: 328-?