Carlo Gilardi

All Publications

• Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors. ACS nano Lin, Q., Gilardi, C., Su, S. K., Zhang, Z., Chen, E., Bandaru, P., Kummel, A., Radu, I., Mitra, S., Pitner, G., Wong, H. P. 2023

  Abstract

  Carbon nanotube (CNT) transistors demonstrate high mobility but also experience off-state leakage due to the small effective mass and band gap. The lower limit of off-current (IMIN) was measured in electrostatically doped CNT metal-oxide-semiconductor field-effect transistors (MOSFETs) across a range of band gaps (0.37 to 1.19 eV), supply voltages (0.5 to 0.7 V), and extension doping levels (0.2 to 0.8 carriers/nm). A nonequilibrium Green's function (NEGF) model confirms the dependence of IMIN on CNT band gap, supply voltage, and extension doping level. A leakage current design space across CNT band gap, supply voltage, and extension doping is projected based on the validated NEGF model for long-channel CNT MOSFETs to identify the appropriate device design choices. The optimal extension doping and CNT band gap design choice for a target off-current density are identified by including on-current projection in the leakage current design space. An extension doping level >0.5 carrier/nm is required for optimized on-current.

  View details for DOI 10.1021/acsnano.3c04346

  View details for PubMedID 37910857

• Ultra-Dense 3D Physical Design Unlocks New Architectural Design Points with Large Benefits Srimani, T., Radway, R. M., Kim, J., Prabhu, K., Rich, D., Gilardi, C., Raina, P., Shulaker, M., Lim, S., Mitra, S., IEEE IEEE. 2023

  View details for Web of Science ID 001027444200118

• Extended Scale Length Theory for Low-Dimensional Field-Effect Transistors IEEE TRANSACTIONS ON ELECTRON DEVICES Gilardi, C., Bennett, R. A., Yoon, Y., Pop, E., Wong, H., Mitra, S. 2022

  View details for DOI 10.1109/TED.2022.3190464

  View details for Web of Science ID 000829075200001

• Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs IEEE ELECTRON DEVICE LETTERS Lin, Q., Pitner, G., Gilardi, C., Su, S., Zhang, Z., Chen, E., Bandaru, P., Kummel, A., Wang, H., Passlack, M., Mitra, S., Wong, H. 2022; 43 (3): 490-493

  View details for DOI 10.1109/LED.2022.3141692

  View details for Web of Science ID 000761656500042

• Extended Scale Length Theory Targeting Low-Dimensional FETs for Carbon Nanotube FET Digital Logic Design-Technology Co-optimization Gilardi, C., Chehab, B., Sisto, G., Schuddinck, P., Ahmed, Z., Zografos, O., Lin, Q., Hellings, G., Ryckaert, J., Wong, H. P., Mitra, S., IEEE IEEE. 2021

  View details for DOI 10.1109/IEDM19574.2021.9720672

  View details for Web of Science ID 000812325400173