All Publications


  • Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory IEEE ELECTRON DEVICE LETTERS Wang, Y., Huang, F., Hu, Y., Cao, R., Shi, T., Liu, Q., Bi, L., Liu, M. 2018; 39 (6): 823–26
  • Active macroscale visible plasmonic nanorod self-assembled monolayer PHOTONICS RESEARCH Li, Y., Li, J., Huang, T., Huang, F., Qin, J., Bi, L., Xie, J., Deng, L., Peng, B. 2018; 6 (5): 409–16
  • HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory IEEE ELECTRON DEVICE LETTERS Huang, F., Wang, Y., Liang, X., Qin, J., Zhang, Y., Yuan, X., Wang, Z., Peng, B., Deng, L., Liu, Q., Bi, L., Liu, M. 2017; 38 (3): 330–33
  • Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition PHYSICAL CHEMISTRY CHEMICAL PHYSICS Huang, F., Chen, X., Liang, X., Qin, J., Zhang, Y., Huang, T., Wang, Z., Peng, B., Zhou, P., Lu, H., Zhang, L., Deng, L., Liu, M., Liu, Q., Tian, H., Bi, L. 2017; 19 (5): 3486–97

    Abstract

    Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

    View details for DOI 10.1039/c6cp07501k

    View details for Web of Science ID 000395328100007

    View details for PubMedID 27924320

  • Study of the phase evolution, metal-insulator transition, and optical properties of vanadium oxide thin films OPTICAL MATERIALS EXPRESS Huang, T., Yang, L., Qin, J., Huang, F., Zhu, X., Zhou, P., Peng, B., Duan, H., Deng, L., Bi, L. 2016; 6 (11): 3609–21