Fei Huang

All Publications

• Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors IEEE ELECTRON DEVICE LETTERS Huang, F., Passlack, M., Liew, S., Yu, Z., Lin, Q., Babadi, A., Hou, V., McIntyre, P. C., Wong, S. 2022; 43 (2): 212-215

  View details for DOI 10.1109/LED.2021.3136309

  View details for Web of Science ID 000748371400015

• Proton Radiation Effects on Y-Doped HfO2-Based Ferroelectric Memory IEEE ELECTRON DEVICE LETTERS Wang, Y., Huang, F., Hu, Y., Cao, R., Shi, T., Liu, Q., Bi, L., Liu, M. 2018; 39 (6): 823–26

  View details for DOI 10.1109/LED.2018.2831784

  View details for Web of Science ID 000437086800010

• Active macroscale visible plasmonic nanorod self-assembled monolayer PHOTONICS RESEARCH Li, Y., Li, J., Huang, T., Huang, F., Qin, J., Bi, L., Xie, J., Deng, L., Peng, B. 2018; 6 (5): 409–16

  View details for DOI 10.1364/PRJ.6.000409

  View details for Web of Science ID 000431307600027

• HfO2-Based Highly Stable Radiation-Immune Ferroelectric Memory IEEE ELECTRON DEVICE LETTERS Huang, F., Wang, Y., Liang, X., Qin, J., Zhang, Y., Yuan, X., Wang, Z., Peng, B., Deng, L., Liu, Q., Bi, L., Liu, M. 2017; 38 (3): 330–33

  View details for DOI 10.1109/LED.2017.2653848

  View details for Web of Science ID 000395878000011

• Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition PHYSICAL CHEMISTRY CHEMICAL PHYSICS Huang, F., Chen, X., Liang, X., Qin, J., Zhang, Y., Huang, T., Wang, Z., Peng, B., Zhou, P., Lu, H., Zhang, L., Deng, L., Liu, M., Liu, Q., Tian, H., Bi, L. 2017; 19 (5): 3486–97

  Abstract

  Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.

  View details for DOI 10.1039/c6cp07501k

  View details for Web of Science ID 000395328100007

  View details for PubMedID 27924320

• Study of the phase evolution, metal-insulator transition, and optical properties of vanadium oxide thin films OPTICAL MATERIALS EXPRESS Huang, T., Yang, L., Qin, J., Huang, F., Zhu, X., Zhou, P., Peng, B., Duan, H., Deng, L., Bi, L. 2016; 6 (11): 3609–21

  View details for DOI 10.1364/OME.6.003609

  View details for Web of Science ID 000387562700026