Jingyuan Linda Zhang is a PhD candidate in Applied Physics Department at Stanford University. She joined professor Jelena Vuckovic’s Nanoscale Quantum Photonics Lab in 2013, and is currently working on quantum optics and quantum information processing with solid-state defect centers. She obtained her undergraduate degree with highest honor in Physics from Princeton University, and is a recipient of Stanford Graduate Fellowship (SGF) at Stanford University (2013-2015).

Honors & Awards

  • Maiman Outstanding Student Paper Competition Grand Prize, The Optical Society (OSA) (2017)
  • Stanford Graduate Fellow, Gabilan Fellow, Stanford University (2013-2015)
  • Allen G. Shenstone Prize in Physics, Princeton University (2012)
  • Member, Phi Beta Kappa Society (2012)
  • Member, Society of Sigma Xi (2012)
  • Kusaka Memorial Prize in Physics, Princeton University (2011)
  • Allen G. Shenstone Prize in Physics, Princeton University (2010)

Education & Certifications

  • Bachelor of Arts, Princeton University, Physics (2012)

Service, Volunteer and Community Work

  • Outreach Committee co-chair, Stanford Optical Society (September 1, 2014 - June 1, 2016)


    Stanford, USA

  • SUPR Committee organizing committee member, Stanford Optical Society (September 2015 - April 2016)


    Stanford, USA

  • Speakers Committee member, Stanford Optical Society (September 2016 - Present)


    Stanford, USA

Current Research and Scholarly Interests

My current research interests include nanophotonics and quantum information processing with silicon-vacancy color center in diamond, silicon carbide photonics, and high harmonic generation in solids.

All Publications

  • Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth. Nano letters Tzeng, Y., Zhang, J. L., Lu, H., Ishiwata, H., Dahl, J., Carlson, R. M., Yan, H., Schreiner, P. R., Vuckovic, J., Shen, Z., Melosh, N., Chu, S. 2017


    Color center-containing nanodiamonds have many applications in quantum technologies and biology. Diamondoids, molecular-sized diamonds have been used as seeds in chemical vapor deposition (CVD) growth. However, optimizing growth conditions to produce high crystal quality nanodiamonds with color centers requires varying growth conditions that often leads to ad-hoc and time-consuming, one-at-a-time testing of reaction conditions. In order to rapidly explore parameter space, we developed a microwave plasma CVD technique using a vertical, rather than horizontally oriented stage-substrate geometry. With this configuration, temperature, plasma density, and atomic hydrogen density vary continuously along the vertical axis of the substrate. This variation allowed rapid identification of growth parameters that yield single crystal diamonds down to 10 nm in size and 75 nm diameter optically active center silicon-vacancy (Si-V) nanoparticles. Furthermore, this method may provide a means of incorporating a wide variety of dopants in nanodiamonds without ion irradiation damage.

    View details for DOI 10.1021/acs.nanolett.6b04543

    View details for PubMedID 28182433

  • Scalable Quantum Photonics with Single Color Centers in Silicon Carbide NANO LETTERS Radulaski, M., Widmann, M., Niethammer, M., Zhang, J. L., Lee, S., Rendler, T., Lagoudakis, K. G., Son, N. T., Janzén, E., Ohshima, T., Wrachtrup, J., Vuckovic, J. 2017; 17 (3): 1782-1786


    Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

    View details for DOI 10.1021/acs.nanolett.6b05102

  • Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond arXiv Zhang, J. 2017; arXiv:1708.05771
  • Photon blockade in two-emitter-cavity systems Physical Review A Radulaski, M., Fischer, K. A., Lagoudakis, K. G., Zhang, J., Vuckovic, J. 2017; 96 (011801(R))
  • Observation of Mollow Triplets with Tunable Interactions in Double Lambda Systems of Individual Hole Spins PHYSICAL REVIEW LETTERS Lagoudakis, K. G., Fischer, K. A., Sarmiento, T., McMahon, P. L., Radulaski, M., Zhang, J. L., Kelaita, Y., Dory, C., Mueller, K., Vuckovic, J. 2017; 118 (1): 013602
  • Tuning the Photon Statistics of a Strongly Coupled Nanophotonic System PHYSICAL REVIEW A Dory, C., Fischer, K. A., Müller, K., Lagoudakis, K. G., Sarmiento, T., Rundquist, A., Zhang, J. L., Kelaita, Y., Sapra, N. V., Vuckovic, J. 2017; 95: 023804
  • Hybrid Group IV Nanophotonic Structures Incorporating Diamond Silicon-Vacancy Color Centers NANO LETTERS Zhang, J. L., Ishiwata, H., Babinec, T. M., Radulaski, M., Mueller, K., Lagoudakis, K. G., Dory, C., Dahl, J., Edgington, R., Souliere, V., Ferro, G., Fokin, A. A., Schreiner, P. R., Shen, Z., Melosh, N. A., Vuckovic, J. 2016; 16 (1): 212-217


    We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV(-)) color centers in diamond as quantum emitters. Hybrid diamond-SiC structures are realized by combining the growth of nano- and microdiamonds on silicon carbide (3C or 4H polytype) substrates, with the subsequent use of these diamond crystals as a hard mask for pattern transfer. SiV(-) color centers are incorporated in diamond during its synthesis from molecular diamond seeds (diamondoids), with no need for ion-implantation or annealing. We show that the same growth technique can be used to grow a diamond layer controllably doped with SiV(-) on top of a high purity bulk diamond, in which we subsequently fabricate nanopillar arrays containing high quality SiV(-) centers. Scanning confocal photoluminescence measurements reveal optically active SiV(-) lines both at room temperature and low temperature (5 K) from all fabricated structures, and, in particular, very narrow line widths and small inhomogeneous broadening of SiV(-) lines from all-diamond nanopillar arrays, which is a critical requirement for quantum computation. At low temperatures (5 K) we observe in these structures the signature typical of SiV(-) centers in bulk diamond, consistent with a double lambda. These results indicate that high quality color centers can be incorporated into nanophotonic structures synthetically with properties equivalent to those in bulk diamond, thereby opening opportunities for applications in classical and quantum information processing.

    View details for DOI 10.1021/acs.nanolett.5b03515

    View details for Web of Science ID 000368322700034

  • Complete Coherent Control of a Quantum Dot Strongly Coupled to a Nanocavity. Scientific reports Dory, C., Fischer, K. A., Müller, K., Lagoudakis, K. G., Sarmiento, T., Rundquist, A., Zhang, J. L., Kelaita, Y., Vuckovic, J. 2016; 6: 25172-?


    Strongly coupled quantum dot-cavity systems provide a non-linear configuration of hybridized light-matter states with promising quantum-optical applications. Here, we investigate the coherent interaction between strong laser pulses and quantum dot-cavity polaritons. Resonant excitation of polaritonic states and their interaction with phonons allow us to observe coherent Rabi oscillations and Ramsey fringes. Furthermore, we demonstrate complete coherent control of a quantum dot-photonic crystal cavity based quantum-bit. By controlling the excitation power and phase in a two-pulse excitation scheme we achieve access to the full Bloch sphere. Quantum-optical simulations are in good agreement with our experiments and provide insight into the decoherence mechanisms.

    View details for DOI 10.1038/srep25172

    View details for PubMedID 27112420

    View details for PubMedCentralID PMC4845032

  • Visible Photoluminescence from Cubic (3C) Silicon Carbide Microdisks Coupled to High Quality Whispering Gallery Modes ACS PHOTONICS Radulaski, M., Babinec, T. M., Mueller, K., Lagoudakis, K. G., Zhang, J. L., Buckley, S., Kelaita, Y. A., Alassaad, K., Ferro, G., Vuckovic, J. 2015; 2 (1): 14-19

    View details for DOI 10.1021/ph500384p

    View details for Web of Science ID 000348339400004

  • Multimode nanobeam cavities for nonlinear optics: high quality resonances separated by an octave OPTICS EXPRESS Buckley, S., Radulaski, M., Zhang, J. L., Petykiewicz, J., Biermann, K., Vuckovic, J. 2014; 22 (22): 26498-26509
  • Nonlinear frequency conversion using high-quality modes in GaAs nanobeam cavities OPTICS LETTERS Buckley, S., Radulaski, M., Zhang, J. L., Petykiewicz, J., Biermann, K., Vuckovic, J. 2014; 39 (19): 5673-5676
  • Same-wavelength cascaded-transition quantum cascade laser APPLIED PHYSICS LETTERS Huang, X., Zhang, J. L., Tokranov, V., Oktyabrsky, S., Gmachl, C. F. 2013; 103 (5)

    View details for DOI 10.1063/1.4817737

    View details for Web of Science ID 000322723000013

  • Cascaded-transition Quantum Cascade Laser 2012 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) Zhang, J. L., Huang, X., Gmachl, C. F., Tokranov, V., Oktyabrsky, S. 2012