Professional Education

  • Doctor of Philosophy, Universiteit Van Amsterdam (2015)
  • Bachelor of Science, Universiteit Utrecht (2009)
  • Master of Science, Universiteit Utrecht (2011)
  • PhD, FOM Institute AMOLF, University of Amsterdam (2015)

Stanford Advisors

All Publications

  • Probing the Band Structure of Topological Silicon Photonic Lattices in the Visible Spectrum PHYSICAL REVIEW LETTERS Peng, S., Schilder, N. J., Ni, X., van de Groep, J., Brongersma, M. L., Alu, A., Khanikaev, A. B., Atwater, H. A., Polman, A. 2019; 122 (11)
  • Antireflection High-Index Metasurfaces Combining Mie and Fabry-Perot Resonances ACS PHOTONICS Cordaro, A., van de Groep, J., Raza, S., Pecora, E., Priolo, F., Brongersma, M. L. 2019; 6 (2): 453–59
  • Spatiotemporal light control with frequency-gradient metasurfaces. Science (New York, N.Y.) Shaltout, A. M., Lagoudakis, K. G., van de Groep, J., Kim, S. J., Vučković, J., Shalaev, V. M., Brongersma, M. L. 2019; 365 (6451): 374–77


    The capability of on-chip wavefront modulation has the potential to revolutionize many optical device technologies. However, the realization of power-efficient phase-gradient metasurfaces that offer full-phase modulation (0 to 2π) and high operation speeds remains elusive. We present an approach to continuously steer light that is based on creating a virtual frequency-gradient metasurface by combining a passive metasurface with an advanced frequency-comb source. Spatiotemporal redirection of light naturally occurs as optical phase-fronts reorient at a speed controlled by the frequency gradient across the virtual metasurface. An experimental realization of laser beam steering with a continuously changing steering angle is demonstrated with a single metasurface over an angle of 25° in just 8 picoseconds. This work can support integrated-on-chip solutions for spatiotemporal optical control, directly affecting emerging applications such as solid-state light detection and ranging (LIDAR), three-dimensional imaging, and augmented or virtual systems.

    View details for DOI 10.1126/science.aax2357

    View details for PubMedID 31346064

  • Probing the Band Structure of Topological Silicon Photonic Lattices in the Visible Spectrum. Physical review letters Peng, S., Schilder, N. J., Ni, X., van de Groep, J., Brongersma, M. L., Alù, A., Khanikaev, A. B., Atwater, H. A., Polman, A. 2019; 122 (11): 117401


    We study two-dimensional hexagonal photonic lattices of silicon Mie resonators with a topological optical band structure in the visible spectral range. We use 30 keV electrons focused to nanoscale spots to map the local optical density of states in topological photonic lattices with deeply subwavelength resolution. By slightly shrinking or expanding the unit cell, we form hexagonal superstructures and observe the opening of a band gap and a splitting of the double-degenerate Dirac cones, which correspond to topologically trivial and nontrivial phases. Optical transmission spectroscopy shows evidence of topological edge states at the domain walls between topological and trivial lattices.

    View details for PubMedID 30951323

  • Reversible and selective ion intercalation through the top surface of few-layer MoS2. Nature communications Zhang, J., Yang, A., Wu, X., van de Groep, J., Tang, P., Li, S., Liu, B., Shi, F., Wan, J., Li, Q., Sun, Y., Lu, Z., Zheng, X., Zhou, G., Wu, C., Zhang, S., Brongersma, M. L., Li, J., Cui, Y. 2018; 9 (1): 5289


    Electrochemical intercalation of ions into the van der Waals gap of two-dimensional (2D) layered materials is a promising low-temperature synthesis strategy to tune their physical and chemical properties. It is widely believed that ions prefer intercalation into the van der Waals gap through the edges of the 2D flake, which generally causes wrinkling and distortion. Here we demonstrate that the ions can also intercalate through the top surface of few-layer MoS2 and this type of intercalation is more reversible and stable compared to the intercalation through the edges. Density functional theory calculations show that this intercalation is enabled by the existence of natural defects in exfoliated MoS2 flakes. Furthermore, we reveal that sealed-edge MoS2 allows intercalation of small alkali metal ions (e.g., Li+ and Na+) and rejects large ions (e.g., K+). These findings imply potential applications in developing functional 2D-material-based devices with high tunability and ion selectivity.

    View details for PubMedID 30538249

  • Metasurface Mirrors for External Control of Mie Resonances. Nano letters van de Groep, J., Brongersma, M. L. 2018


    The ability to control and structurally tune the optical resonances of semiconductor nanostructures has far-reaching implications for a wide range of optical applications, including photodetectors, (bio)sensors, and photovoltaics. Such control is commonly obtained by tailoring the nanostructure's geometry, material, or dielectric environment. Here, we combine insights from the field of coherent optics and metasurface mirrors to effectively turn Mie resonances on and off with high spatial control and in a polarization-dependent fashion. We illustrate this in an integrated device by manipulating the photocurrent spectra of a single-nanowire photodetector placed on a metasurface mirror. This approach can be generalized to control spectral, angle-dependent, absorption, and scattering properties of semiconductor nanostructures with an engineered metasurface and without a need to alter their geometric or materials properties.

    View details for PubMedID 29787285

  • Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics NATURE NANOTECHNOLOGY Gong, Y., Yuan, H., Wu, C., Tang, P., Yang, S., Yang, A., Li, G., Liu, B., van de Groep, J., Brongersma, M. L., Chisholm, M. F., Zhang, S., Zhou, W., Cui, Y. 2018; 13 (4): 294-+


    Doped semiconductors are the most important building elements for modern electronic devices 1 . In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface2,3. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits4-9. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development 10 . Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturally grown n-type S-vacancy SnS2, Cu intercalated bilayer SnS2 obtained by this technique displays a hole field-effect mobility of ~40 cm2 V-1 s-1, and the obtained Co-SnS2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene 5 . Combining this intercalation technique with lithography, an atomically seamless p-n-metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.

    View details for PubMedID 29483599