Dr. Jun Xiao received a Ph.D. degree in Applied Physics from UC Berkeley (2018) and a B.S. degree in Physics from Nanjing University (2012).

Jun’s research has centered on the exploration of the emerging properties of two-dimensional materials through the application of a wide range of optical spectroscopy, scanning probe microscopy and electrical measurements. More specifically, he conducted experimental investigation in how crystal symmetry and symmetry breaking substantially influence on optoelectronic properties, polar structures and phase transitions in two-dimensional systems. Along this line, Jun is also interested in visualizing the ultrafast dynamics and driving nonequilibrium phase transition in quantum materials.

Dr. Jun Xiao has published over 10 high-impact journal papers including publications in Science, Nature, Nature Nanotechnology, Physical Review Letters and Nature Communications.

Professional Education

  • Doctor of Philosophy, University of California Berkeley (2018)

All Publications

  • Enhanced ferroelectricity in ultrathin films grown directly on silicon. Nature Cheema, S. S., Kwon, D., Shanker, N., Dos Reis, R., Hsu, S., Xiao, J., Zhang, H., Wagner, R., Datar, A., McCarter, M. R., Serrao, C. R., Yadav, A. K., Karbasian, G., Hsu, C., Tan, A. J., Wang, L., Thakare, V., Zhang, X., Mehta, A., Karapetrova, E., Chopdekar, R. V., Shafer, P., Arenholz, E., Hu, C., Proksch, R., Ramesh, R., Ciston, J., Salahuddin, S. 2020; 580 (7804): 478–82


    Ultrathin ferroelectric materials could potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memories1,2. As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides-the archetypal ferroelectric system3. Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes4. Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO2), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems-that is, from perovskite-derived complex oxides to fluorite-structure binary oxides-in which 'reverse' size effects counterintuitively stabilize polar symmetry in the ultrathin regime.

    View details for DOI 10.1038/s41586-020-2208-x

    View details for PubMedID 32322080

  • Strain-induced room-temperature ferroelectricity in SrTiO3 membranes. Nature communications Xu, R., Huang, J., Barnard, E. S., Hong, S. S., Singh, P., Wong, E. K., Jansen, T., Harbola, V., Xiao, J., Wang, B. Y., Crossley, S., Lu, D., Liu, S., Hwang, H. Y. 2020; 11 (1): 3141


    Advances in complex oxide heteroepitaxy have highlighted the enormous potential of utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film heterostructures. This approach, however, lacks the ability to produce large and continuously variable strain states, thus limiting the potential for designing and tuning the desired properties of ferroelectric films. Here, we observe and explore dynamic strain-induced ferroelectricity in SrTiO3 by laminating freestanding oxide films onto a stretchable polymer substrate. Using a combination of scanning probe microscopy, optical second harmonic generation measurements, and atomistic modeling, we demonstrate robust room-temperature ferroelectricity in SrTiO3 with 2.0% uniaxial tensile strain, corroborated by the notable features of 180° ferroelectric domains and an extrapolated transition temperature of 400 K. Our work reveals the enormous potential of employing oxide membranes to create and enhance ferroelectricity in environmentally benign lead-free oxides, which hold great promise for applications ranging from non-volatile memories and microwave electronics.

    View details for DOI 10.1038/s41467-020-16912-3

    View details for PubMedID 32561835

  • Structural phase transition in monolayer MoTe2 driven by electrostatic doping NATURE Wang, Y., Xiao, J., Zhu, H., Li, Y., Alsaid, Y., Fong, K., Zhou, Y., Wang, S., Shi, W., Wang, Y., Zettl, A., Reed, E. J., Zhang, X. 2017; 550 (7677): 487-+


    Monolayers of transition-metal dichalcogenides (TMDs) exhibit numerous crystal phases with distinct structures, symmetries and physical properties. Exploring the physics of transitions between these different structural phases in two dimensions may provide a means of switching material properties, with implications for potential applications. Structural phase transitions in TMDs have so far been induced by thermal or chemical means; purely electrostatic control over crystal phases through electrostatic doping was recently proposed as a theoretical possibility, but has not yet been realized. Here we report the experimental demonstration of an electrostatic-doping-driven phase transition between the hexagonal and monoclinic phases of monolayer molybdenum ditelluride (MoTe2). We find that the phase transition shows a hysteretic loop in Raman spectra, and can be reversed by increasing or decreasing the gate voltage. We also combine second-harmonic generation spectroscopy with polarization-resolved Raman spectroscopy to show that the induced monoclinic phase preserves the crystal orientation of the original hexagonal phase. Moreover, this structural phase transition occurs simultaneously across the whole sample. This electrostatic-doping control of structural phase transition opens up new possibilities for developing phase-change devices based on atomically thin membranes.

    View details for PubMedID 29019982