Bio


I am a Ph.D. student in the Department of Physics at Stanford University. Currently I am working in the group of Prof. Tony Heinz. I am interested in studying opto-electronic properties and emergent phenomena in novel two-dimensional van der Waals heterostructures. My current research focuses on transition metal dichalcogenide (TMD) homo- and heterobilayers. I completed my B.S. in Physics from Harvard University where I worked in the group of Prof. Philip Kim on interlayer excitons in WSe2/MoSe2 heterostructures and quantum transport in WSe2 mono- and twisted homobilayers.

Education & Certifications


  • Bachelor of Science, Harvard University, Physics (2018)

All Publications


  • Guided Modes of Anisotropic van der Waals Materials Investigated by near-Field Scanning Optical Microscopy ACS PHOTONICS Wintz, D., Chaudhary, K., Wang, K., Jauregui, L. A., Ambrosio, A., Tamagnone, M., Zhu, A. Y., Devlin, R. C., Crossno, J. D., Pistunova, K., Watanabe, K., Taniguchi, T., Kim, P., Capasso, F. 2018; 5 (4): 1196–1201
  • Probing dark excitons in atomically thin semiconductors via near-field coupling to surface plasmon polaritons NATURE NANOTECHNOLOGY Zhou, Y., Scuri, G., Wild, D. S., High, A. A., Dibos, A., Jauregui, L. A., Shu, C., De Greve, K., Pistunova, K., Joe, A. Y., Taniguchi, T., Watanabe, K., Kim, P., Lukin, M. D., Park, H. 2017; 12 (9): 856-+

    Abstract

    Transition metal dichalcogenide (TMD) monolayers with a direct bandgap feature tightly bound excitons, strong spin-orbit coupling and spin-valley degrees of freedom. Depending on the spin configuration of the electron-hole pairs, intra-valley excitons of TMD monolayers can be either optically bright or dark. Dark excitons involve nominally spin-forbidden optical transitions with a zero in-plane transition dipole moment, making their detection with conventional far-field optical techniques challenging. Here, we introduce a method for probing the optical properties of two-dimensional materials via near-field coupling to surface plasmon polaritons (SPPs). This coupling selectively enhances optical transitions with dipole moments normal to the two-dimensional plane, enabling direct detection of dark excitons in TMD monolayers. When a WSe2 monolayer is placed on top of a single-crystal silver film, its emission into near-field-coupled SPPs displays new spectral features whose energies and dipole orientations are consistent with dark neutral and charged excitons. The SPP-based near-field spectroscopy significantly improves experimental capabilities for probing and manipulating exciton dynamics of atomically thin materials, thus opening up new avenues for realizing active metasurfaces and robust optoelectronic systems, with potential applications in information processing and communication.

    View details for DOI 10.1038/NNANO.2017.106

    View details for Web of Science ID 000409361800009

    View details for PubMedID 28650440

  • Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes NANO LETTERS Cui, X., Shih, E., Jauregui, L. A., Chae, S., Kim, Y., Li, B., Seo, D., Pistunova, K., Yin, J., Park, J., Choi, H., Lee, Y., Watanabe, K., Taniguchi, T., Kim, P., Dean, C. R., Hone, J. C. 2017; 17 (8): 4781–86

    Abstract

    Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve low-temperature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kΩ.μm at a carrier density of 5.3 × 1012/cm2. This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work.

    View details for DOI 10.1021/acs.nanolett.7b01536

    View details for Web of Science ID 000407540300034

    View details for PubMedID 28691487