Ke Zeng's Profile | Stanford Profiles

Bio

Ke Zeng received his Ph.D. and MS degree in the Electrical Engineering Department of SUNY-Buffalo. His current research is focused on fabricating various high power/performance electronic devices based on GaN and Ga2O3, especially utilizing various novel edge termination techniques and device structures, as well as understanding the fundamental physics underlying these devices.

Stanford Advisors

Srabanti Chowdhury, Postdoctoral Faculty Sponsor

Contact

Academic
kzeng2@stanford.edu

University - Scholar Department: Electrical Engineering Position: Postdoctoral Scholar

Additional Info

Mail Code: 9505

Lab Affiliations

Srabanti Chowdhury, WBG-Lab (9/1/2019)

All Publications

Vertical Ga2O3 MOSFET With Magnesium Diffused Current Blocking Layer IEEE ELECTRON DEVICE LETTERS Zeng, K., Soman, R., Bian, Z., Jeong, S., Chowdhury, S. 2022; 43 (9): 1527-1530

View details for DOI 10.1109/LED.2022.3196035

View details for Web of Science ID 000845067200038
2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer IEEE ELECTRON DEVICE LETTERS Bian, Z., Zeng, K., Chowdhury, S. 2022; 43 (4): 596-599

View details for DOI 10.1109/LED.2022.3149748

View details for Web of Science ID 000792918100027
A discussion on various experimental methods of impact ionization coefficient measurement in GaN AIP ADVANCES Ji, D., Zeng, K., Bian, Z., Shankar, B., Gunning, B. P., Binder, A., Dickerson, J. R., Aktas, O., Anderson, T. J., Kaplar, R. J., Chowdhury, S. 2022; 12 (3)

View details for DOI 10.1063/5.0083111

View details for Web of Science ID 000772898200002
On-Wafer Investigation of Avalanche Robustness in 1.3 kV GaN-on-GaN P-N Diode Under Unclamped Inductive Switching Stress Shankar, B., Zeng, K., Gunning, B., Lee, K., Martinez, R., Meng, C., Zhou, X., Flicker, J., Binder, A., Dickerson, J., Kaplar, R., Chowdhury, S., IEEE IEEE. 2021: 40-43

View details for DOI 10.1109/WiPDA49284.2021.9645154

View details for Web of Science ID 000787172500009
Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination Zeng, K., Chowdhury, S., Gunning, B., Kaplar, R., Anderson, T., IEEE IEEE. 2021

View details for DOI 10.1109/IRPS46558.2021.9405165

View details for Web of Science ID 000672563100076
Designing Beveled Edge Termination in GaN Vertical p-i-n Diode-Bevel Angle, Doping, and Passivation IEEE TRANSACTIONS ON ELECTRON DEVICES Zeng, K., Chowdhury, S. 2020; 67 (6): 2457–62

View details for DOI 10.1109/TED.2020.2987040

View details for Web of Science ID 000538163700037
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage IEEE ELECTRON DEVICE LETTERS Sharma, S., Zeng, K., Saha, S., Singisetti, U. 2020; 41 (6): 836–39

View details for DOI 10.1109/LED.2020.2991146

View details for Web of Science ID 000541155300011

Ke Zeng

Postdoctoral Scholar, Electrical Engineering

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Stanford Advisors

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