Kunal Mukherjee

All Publications

• Engineering PbSnSe Heterostructures for Luminescence Out to 8 μm at Room Temperature ADVANCED OPTICAL MATERIALS Meyer, J. E., Nordin, L., Carrasco, R. A., Webster, P. T., Dumont, M., Mukherjee, K. 2024

  View details for DOI 10.1002/adom.202401746

  View details for Web of Science ID 001312005000001

• Role of oxygen in laser-induced contamination at diamond-vacuum interfaces PHYSICAL REVIEW APPLIED Parthasarathy, S., Joos, M., Hughes, L. B., Meynell, S. A., Morrison, T. A., Risner-Jamtgaard, J. D., Weld, D. M., Mukherjee, K., Jayich, A. 2024; 22 (2)

  View details for DOI 10.1103/PhysRevApplied.22.024067

  View details for Web of Science ID 001299668900005

• Expanded Stability of Layered SnSe-PbSe Alloys and Evidence of Displacive Phase Transformation from Rocksalt in Heteroepitaxial Thin Films. ACS nano Reddy, P. D., Nordin, L. J., Hughes, L. B., Preidl, A. K., Mukherjee, K. 2024

  Abstract

  Bulk PbSnSe has a two-phase region, or miscibility gap, as the crystal changes from a van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related 3D-bonded rocksalt structure in PbSe-rich compositions. This structural transition drives a large contrast in the electrical, optical, and thermal properties. We realize low temperature direct growth of epitaxial PbSnSe thin films on GaAs via molecular beam epitaxy using an in situ PbSe surface treatment and show a significantly reduced two-phase region by stabilizing the Pnma layered structure out to Pb0.45Sn0.55Se, beyond the bulk limit around Pb0.25Sn0.75Se at low temperatures. Pushing further, we directly access metastable two-phase films of layered and rocksalt grains that are nearly identical in composition around Pb0.50Sn0.50Se and entirely circumvent the miscibility gap. We present microstructural and compositional evidence for an incomplete displacive transformation from a rocksalt to layered structure in these films, which we speculate occurs during the sample cooling to room temperature after synthesis. In situ temperature-cycling experiments on a Pb0.58Sn0.42Se rocksalt film reproduce characteristic attributes of a displacive transition and show a modulation in electronic properties. We find well-defined orientation relationships between the phases formed and reveal unconventional strain relief mechanisms involved in the crystal structure transformation using transmission electron microscopy. Overall, our work adds a scalable thin film integration route to harness the dramatic contrast in material properties in PbSnSe across a potentially ultrafast crystalline-crystalline structural transition.

  View details for DOI 10.1021/acsnano.4c04128

  View details for PubMedID 38717390

• Gradual degradation in InAs quantum dot lasers on Si and GaAs. Nanoscale Hughes, E. T., Shang, C., Selvidge, J., Jung, D., Wan, Y., Herrick, R. W., Bowers, J. E., Mukherjee, K. 2024

  Abstract

  Reliable quantum dot lasers on silicon are a key remaining challenge to successful integrated silicon photonics. In this work, quantum dot (QD) lasers on silicon with and without misfit dislocation trapping layers are aged for 12000 hours and are compared to QD lasers on native GaAs aged for 8400 hours. The non-trapping-layer (TL) laser on silicon degrades heavily during this time, but much more modest gradual degradation is observed for the other two devices. Electroluminescence imaging reveals relatively uniform gradual dimming for the aged TL laser on silicon. At the same time, we find nanoscale dislocation loop defects throughout the quantum dot-based active region of all three aged lasers via electron microscopy. The Burgers vector of these loops is consistent with . We suggest that the primary source of degradation, however, is the generation and migration of point defects that substantially enhance non-radiative recombination in the active region, the visible symptom of which is the formation of dislocation loops. To prevent this, we propose that laser fabrication should be switched from deeply etched to shallow etch ridges where the active region remains intact near the mesa. Additionally, post-growth annealing and altered growth conditions in the active region should be explored to minimize the grown-in point defect density.

  View details for DOI 10.1039/d3nr05311c

  View details for PubMedID 38251961

• Sputtered SnTe Thin Films on Si and Ge as a Plasmonic Material ACS APPLIED ELECTRONIC MATERIALS Nguyen, T., Nordin, L., Mukherjee, K. 2024

  View details for DOI 10.1021/acsaelm.3c01449

  View details for Web of Science ID 001162282000001

• Direct Integration of GaSb with GaAs(111)A Using Interfacial Misfit Arrays CRYSTAL GROWTH & DESIGN Nordstrom, M. D., Garrett, T. A., Reddy, P., McElearney, J., Rushing, J. R., Vallejo, K. D., Mukherjee, K., Grossklaus, K. A., Vandervelde, T. E., Simmonds, P. J. 2023

  View details for DOI 10.1021/acs.cgd.3c00812

  View details for Web of Science ID 001096785700001

• Mid-wave infrared photoluminescence from low-temperature-grown PbSe epitaxial films on GaAs after rapid thermal annealing APPLIED PHYSICS LETTERS Meyer, J. E., Nordin, L., Nguyen, T., Mukherjee, K. 2023; 123 (13)

  View details for DOI 10.1063/5.0160802

  View details for Web of Science ID 001078318100022

• Dislocation-Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Hughes, E. T., Kusch, G., Selvidge, J., Bonef, B., Norman, J., Shang, C., Bowers, J. E., Oliver, R. A., Mukherjee, K. 2023

  View details for DOI 10.1002/pssa.202300114

  View details for Web of Science ID 001014670400001

• Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates PHYSICAL REVIEW MATERIALS Haidet, B. B., Meyer, J., Reddy, P., Hughes, E. T., Mukherjee, K. 2023; 7 (2)

  View details for DOI 10.1103/PhysRevMaterials.7.024602

  View details for Web of Science ID 000936582300003

• Two-dimensional spin systems in PECVD-grown diamond with tunable density and long coherence for enhanced quantum sensing and simulation APL MATERIALS Hughes, L. B., Zhang, Z., Jin, C., Meynell, S. A., Ye, B., Wu, W., Wang, Z., Davis, E. J., Mates, T. E., Yao, N. Y., Mukherjee, K., Jayich, A. C. 2023; 11 (2)

  View details for DOI 10.1063/5.0133501

  View details for Web of Science ID 000924668200001

• Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum JOURNAL OF APPLIED PHYSICS France, R. M., Selvidge, J., Mukherjee, K., Steiner, M. A. 2022; 132 (18)

  View details for DOI 10.1063/5.0125998

  View details for Web of Science ID 000882465900003

• Dislocation Formation and Filtering in III-V Regrowth on GaAs Bonded on Si CRYSTAL GROWTH & DESIGN Hughes, E. T., Dumont, M., Hu, Y., Liang, D., Beausoleil, R. G., Bowers, J. E., Mukherjee, K. 2022

  View details for DOI 10.1021/acs.cgd.2c00309

  View details for Web of Science ID 000854059600001

• Epitaxial Integration and Defect Structure of Layered SnSe Films on PbSe/III-V Substrates CRYSTAL GROWTH & DESIGN Haidet, B. B., Hughes, E., Mukherjee, K. 2022

  View details for DOI 10.1021/acs.cgd.2c00188

  View details for Web of Science ID 000822302100001

• Kinetically limited misfit dislocations formed during post-growth cooling in III-V lasers on silicon JOURNAL OF PHYSICS D-APPLIED PHYSICS Mukherjee, K., Selvidge, J., Hughes, E., Norman, J., Shang, C., Herrick, R., Bowers, J. 2021; 54 (49)

  View details for DOI 10.1088/1361-6463/ac24c9

  View details for Web of Science ID 000697650300001

• Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs APL MATERIALS Meyer, J., Muhowski, A. J., Nordin, L., Hughes, E., Haidet, B., Wasserman, D., Mukherjee, K. 2021; 9 (11)

  View details for DOI 10.1063/5.0070555

  View details for Web of Science ID 000720009100002

• Perspectives on Advances in Quantum Dot Lasers and Integration with Si Photonic Integrated Circuits ACS PHOTONICS Shang, C., Wan, Y., Selvidge, J., Hughes, E., Herrick, R., Mukherjee, K., Duan, J., Grillot, F., Chow, W. W., Bowers, J. E. 2021; 8 (9): 2555-2566

  View details for DOI 10.1021/acsphotonics.1c00707

  View details for Web of Science ID 000697319600001

• Pipe-diffusion-enriched dislocations and interfaces in SnSe/PbSe heterostructures PHYSICAL REVIEW MATERIALS Hughes, E. T., Haidet, B. B., Bonef, B., Cai, W., Mukherjee, K. 2021; 5 (7)

  View details for DOI 10.1103/PhysRevMaterials.5.073402

  View details for Web of Science ID 000679200500001

• High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters OPTICA Shang, C., Hughes, E., Wan, Y., Dumont, M., Koscica, R., Selvidge, J., Herrick, R., Gossard, A. C., Mukherjee, K., Bowers, J. E. 2021; 8 (5): 749-754

  View details for DOI 10.1364/OPTICA.423360

  View details for Web of Science ID 000654252200023

• Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures APPLIED PHYSICS LETTERS Selvidge, J., Hughes, E. T., Norman, J. C., Shang, C., Kennedy, M. J., Dumont, M., Netherton, A. M., Zhang, Z., Herrick, R. W., Bowers, J. E., Mukherjee, K. 2021; 118 (19)

  View details for DOI 10.1063/5.0052316

  View details for Web of Science ID 000649073600021

• Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Haidet, B. B., Nordin, L., Muhowski, A. J., Vallejo, K. D., Hughes, E. T., Meyer, J., Simmonds, P. J., Wasserman, D., Mukherjee, K. 2021; 39 (2)

  View details for DOI 10.1116/6.0000774

  View details for Web of Science ID 000629844400001

• Ferroelastic Hysteresis in Thin Films of Methylammonium Lead Iodide CHEMISTRY OF MATERIALS Kennard, R. M., Dahlman, C. J., DeCrescent, R. A., Schuller, J. A., Mukherjee, K., Seshadri, R., Chabinyc, M. L. 2021; 33 (1): 298–309

  View details for DOI 10.1021/acs.chemmater.0c03776

  View details for Web of Science ID 000610984700028

• High temperature reliable epitaxially grown quantum dot lasers on (001) Si with record performance Shang, C., Hughes, E., Wan, Y., Dumont, M., Koscica, R., Selvidge, J., Herrick, R., Gossard, A. C., Mukherjee, K., Bowers, J. E., IEEE IEEE. 2021

  View details for Web of Science ID 000831479803019

• Degradation Behaviors in InAs Quantum Dot Lasers on Silicon using Misfit Dislocation Trapping Layers Selvidge, J., Hughes, E. T., Shang, C., Herrick, R. W., Bowers, J. E., Mukherjee, K., IEEE IEEE. 2021

  View details for DOI 10.1109/IPC48725.2021.9593088

  View details for Web of Science ID 000866488100244

• Controlling facets and defects of InP nanostructures in confined epitaxial lateral overgrowth PHYSICAL REVIEW MATERIALS Goswami, A., Brunelli, S., Markman, B., Taylor, A. A., Tseng, H., Mukherjee, K., Rodwell, M., Klamkin, J., Palmstrom, C. J. 2020; 4 (12)

  View details for DOI 10.1103/PhysRevMaterials.4.123403

  View details for Web of Science ID 000600107000002

• Engineering quantum-coherent defects: The role of substrate miscut in chemical vapor deposition diamond growth APPLIED PHYSICS LETTERS Meynell, S. A., McLellan, C. A., Hughes, L. B., Wang, W., Mates, T. E., Mukherjee, K., Jayich, A. 2020; 117 (19)

  View details for DOI 10.1063/5.0029715

  View details for Web of Science ID 000594750600001

• Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon APPLIED PHYSICS LETTERS Selvidge, J., Norman, J., Hughes, E. T., Shang, C., Jung, D., Taylor, A. A., Kennedy, M. J., Herrick, R., Bowers, J. E., Mukherjee, K. 2020; 117 (12)

  View details for DOI 10.1063/5.0023378

  View details for Web of Science ID 000574437300001

• A Pathway to Thin GaAs Virtual Substrate on On-Axis Si (001) with Ultralow Threading Dislocation Density PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Shang, C., Selvidge, J., Hughes, E., Norman, J. C., Taylor, A. A., Gossard, A. C., Mukherjee, K., Bowers, J. E. 2020

  View details for DOI 10.1002/pssa.202000402

  View details for Web of Science ID 000559453100001

• Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon JOURNAL OF APPLIED PHYSICS Mukherjee, K., Selvidge, J., Jung, D., Norman, J., Taylor, A. A., Salmon, M., Liu, A. Y., Bowers, J. E., Herrick, R. W. 2020; 128 (2)

  View details for DOI 10.1063/1.5143606

  View details for Web of Science ID 000553055500001

• Nucleation control and interface structure of rocksalt PbSe on (001) zincblende III-V surfaces PHYSICAL REVIEW MATERIALS Haidet, B. B., Hughes, E. T., Mukherjee, K. 2020; 4 (3)

  View details for DOI 10.1103/PhysRevMaterials.4.033402

  View details for Web of Science ID 000517972500001

• Development of Lattice-Mismatched GaInAsP for Radiation Hardness IEEE JOURNAL OF PHOTOVOLTAICS France, R. M., Espinet-Gonzalez, P., Haidet, B. B., Mukherjee, K., Guthrey, H. L., Atwater, H. A., Walker, D. 2020; 10 (1): 103–8

  View details for DOI 10.1109/JPHOTOV.2019.2947555

  View details for Web of Science ID 000535673700013

• Defects in Cd3As2 epilayers via molecular beam epitaxy and strategies for reducing them PHYSICAL REVIEW MATERIALS Rice, A. D., Park, K., Hughes, E. T., Mukherjee, K., Alberi, K. 2019; 3 (12)

  View details for DOI 10.1103/PhysRevMaterials.3.121201

  View details for Web of Science ID 000501530000002

• III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template LIGHT-SCIENCE & APPLICATIONS Hu, Y., Liang, D., Mukherjee, K., Li, Y., Zhang, C., Kurczveil, G., Huang, X., Beausoleil, R. G. 2019; 8: 93

  Abstract

  Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade. Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correlated root causes, i.e., lattice, thermal, and domain mismatches, which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p-i-n diode laser structure shows a significantly low dislocation density of 9.5 × 104 cm-2, two orders of magnitude lower than the state-of-the-art conventional monolithic growth on Si. This low dislocation density would eliminate defect-induced laser lifetime concerns for practical applications. The fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31 μm, with a minimal threshold current density of 813 A/cm2. This generic concept can be applied to other material systems to provide higher integration density, more functionalities and lower total cost for photonics as well as microelectronics, MEMS, and many other applications.

  View details for DOI 10.1038/s41377-019-0202-6

  View details for Web of Science ID 000489749400002

  View details for PubMedID 31645936

  View details for PubMedCentralID PMC6804852

• Growth and Magnetotransport in Thin-Film alpha-Sn on CdTe PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Vail, O., Taylor, P., Folkes, P., Nichols, B., Haidet, B., Mukherjee, K., de Coster, G. 2020; 257 (1)

  View details for DOI 10.1002/pssb.201800513

  View details for Web of Science ID 000488060000001

• Non-radiative recombination at dislocations in InAs quantum dots grown on silicon APPLIED PHYSICS LETTERS Selvidge, J., Norman, J., Salmon, M. E., Hughes, E. T., Bowers, J. E., Herrick, R., Mukherjee, K. 2019; 115 (13)

  View details for DOI 10.1063/1.5113517

  View details for Web of Science ID 000487997400031

• Phase Stability and Diffusion in Lateral Heterostructures of Methyl Ammonium Lead Halide Perovskites ACS APPLIED MATERIALS & INTERFACES Kennard, R. M., Dahlman, C. J., Nakayama, H., DeCrescent, R. A., Schuller, J. A., Seshadri, R., Mukherjee, K., Chabinyc, M. L. 2019; 11 (28): 25313–21

  Abstract

  Mixed halide hybrid organic-inorganic perovskites have band gaps that span the visible spectrum making them candidates for optoelectronic devices. Transport of the halide atoms in methyl ammonium lead iodide (MAPbI3) and its alloys with bromine has been observed in both dark and under illumination. While halide transport upon application of electric fields has received much attention, less is known regarding bromide and iodide interdiffusion down concentration gradients. This work provides an upper bound on the bromide-iodide interdiffusion coefficient Di in thin films of MAPb(Br x I1-x)3 using a diffusion couples of lateral heterostructures. The upper bound of Di was extracted from changes in the interface profiles of the heterostructures upon exposure to heat. The stability of thoroughly heated interfacial profiles suggests that the miscibility gap extends to higher temperatures and to a higher fractional composition of bromine than predicted by theory. The results of this work provide guidance for compositions of thermally stable heterostructures of hybrid halide perovskites.

  View details for DOI 10.1021/acsami.9b06069

  View details for Web of Science ID 000476684900051

  View details for PubMedID 31268293

• Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering JOURNAL OF APPLIED PHYSICS Hughes, E. T., Shah, R. D., Mukherjee, K. 2019; 125 (16)

  View details for DOI 10.1063/1.5088844

  View details for Web of Science ID 000466779900048

• Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges JOURNAL OF CRYSTAL GROWTH Mukherjee, K., Vaisman, M., Callahan, P. G., Lee, M. 2019; 512: 169–75

  View details for DOI 10.1016/j.jcrysgro.2019.01.044

  View details for Web of Science ID 000460040600030

• Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures NANO LETTERS Bonef, B., Shah, R. D., Mukherjee, K. 2019; 19 (3): 1428–36

  Abstract

  Heterogeneous integration of semiconductors combines the functionality of different materials, enabling technologies such as III-V lasers and solar cells on silicon and GaN LEDs on sapphire. However, threading dislocations generated during the epitaxy of these dissimilar materials remain a key obstacle to the success of this approach due to reduced device efficiencies and reliability. Strategies to alleviate this and understand charge carrier recombination at threading dislocations now need an accurate description of the structure of threading dislocations in semiconductor heterostructures. We show that the composition around threading dislocations in technologically important InGaAs/GaAs/Ge/Si heterostructures are indeed different from that of the matrix. Site-specific atom probe tomography enabled by electron channeling contrast imaging reveals this at individual dislocations. We present evidence for the simultaneous fast diffusion of germanium and indium up and down a dislocation, respectively, leading to unique compositional profiles. We also detect the formation of clusters of metastable composition at the interface between Ge and GaAs, driven by intermixing in these two nearly immiscible materials. Together, our results have important implications for the properties of dislocations and interfaces in semiconductors and provide new tools for their study.

  View details for DOI 10.1021/acs.nanolett.8b03734

  View details for Web of Science ID 000461537600003

  View details for PubMedID 30742447

• Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001) PHYSICAL REVIEW MATERIALS Lee, J., Shojaei, B., Pendharkar, M., Feldman, M., Mukherjee, K., Palmstrom, C. J. 2019; 3 (1)

  View details for DOI 10.1103/PhysRevMaterials.3.014603

  View details for Web of Science ID 000455689900003

• Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Jung, D., Norman, J., Wan, Y., Liu, S., Herrick, R., Selvidge, J., Mukherjee, K., Gossard, A. C., Bowers, J. E. 2019; 216 (1)

  View details for DOI 10.1002/pssa.201800602

  View details for Web of Science ID 000455254300011

• Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon PHYSICAL REVIEW MATERIALS Callahan, P. G., Haidet, B. B., Jung, D., Seward, G. E., Mukherjee, K. 2018; 2 (8)

  View details for DOI 10.1103/PhysRevMaterials.2.081601

  View details for Web of Science ID 000441240600001

• Recombination activity of threading dislocations in GaInP influenced by growth temperature JOURNAL OF APPLIED PHYSICS Mukherjee, K., Reilly, C. H., Callahan, P. G., Seward, G. E. 2018; 123 (16)

  View details for DOI 10.1063/1.5018849

  View details for Web of Science ID 000431147200155

• Low threading dislocation density GaAs growth on on-axis GaP/Si (001) JOURNAL OF APPLIED PHYSICS Jung, D., Callahan, P. G., Shin, B., Mukherjee, K., Gossard, A. C., Bowers, J. E. 2017; 122 (22)

  View details for DOI 10.1063/1.5001360

  View details for Web of Science ID 000418349300058

• Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast APPLIED PHYSICS LETTERS Mukherjee, K., Wacaser, B. A., Bedell, S. W., Sadana, D. K. 2017; 110 (23)

  View details for DOI 10.1063/1.4984210

  View details for Web of Science ID 000403347700011

• Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure. ACS applied materials & interfaces Mukherjee, K., Hayamizu, Y., Kim, C. S., Kolchina, L. M., Mazo, G. N., Istomin, S. Y., Bishop, S. R., Tuller, H. L. 2016; 8 (50): 34295-34302

  Abstract

  Highly textured thin films of undoped, Ce-doped, and Sr-doped Pr2CuO4 were synthesized on single crystal YSZ substrates using pulsed laser deposition to investigate their area-specific resistance (ASR) as cathodes in solid-oxide fuel cells (SOFCs). The effects of T' and T* crystal structures, donor and acceptor doping, and a-axis and c-axis orientation on ASR were systematically studied using electrochemical impedance spectroscopy on half cells. The addition of both Ce and Sr dopants resulted in improvements in ASR in c-axis oriented films, as did the T* crystal structure with the a-axis orientation. Pr1.6Sr0.4CuO4 is identified as a potential cathode material with nearly an order of magnitude faster oxygen reduction reaction kinetics at 600 °C compared to thin films of the commonly studied cathode material La0.6Sr0.4Co0.8Fe0.2O3-δ. Orientation control of the cuprate films on YSZ was achieved using seed layers, and the anisotropy in the ASR was found to be less than an order of magnitude. The rare-earth doped cuprate was found to be a versatile system for study of relationships between bulk properties and the oxygen reduction reaction, critical for improving SOFC performance.

  View details for DOI 10.1021/acsami.6b08977

  View details for PubMedID 27998143

• Direct-Gap 2.1-2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers IEEE JOURNAL OF PHOTOVOLTAICS Vaisman, M., Mukherjee, K., Masuda, T., Yaung, K., Fitzgerald, E. A., Lee, M. 2016; 6 (2): 571–77

  View details for DOI 10.1109/JPHOTOV.2015.2506401

  View details for Web of Science ID 000372012100028

• Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence JOURNAL OF APPLIED PHYSICS Mukherjee, K., Norman, A. G., Akey, A. J., Buonassisi, T., Fitzgerald, E. A. 2015; 118 (11)

  View details for DOI 10.1063/1.4930990

  View details for Web of Science ID 000361843300046

• Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures APPLIED PHYSICS LETTERS Mukherjee, K., Deotare, P. B., Fitzgerald, E. A. 2015; 106 (14)

  View details for DOI 10.1063/1.4917254

  View details for Web of Science ID 000352820700019

• Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers JOURNAL OF CRYSTAL GROWTH Mukherjee, K., Beaton, D. A., Mascarenhas, A., Bulsara, M. T., Fitzgerald, E. A. 2014; 392: 74–80

  View details for DOI 10.1016/j.jcrysgro.2014.01.058

  View details for Web of Science ID 000335771300012

• Determination of the direct to indirect bandgap transition composition in AlxIn1-xP JOURNAL OF APPLIED PHYSICS Beaton, D. A., Christian, T., Alberi, K., Mascarenhas, A., Mukherjee, K., Fitzgerald, E. A. 2013; 114 (20)

  View details for DOI 10.1063/1.4833540

  View details for Web of Science ID 000327697600010

• Amber-green light-emitting diodes using order-disorder AlxIn1-xP heterostructures JOURNAL OF APPLIED PHYSICS Christian, T. M., Beaton, D. A., Mukherjee, K., Alberi, K., Fitzgerald, E. A., Mascarenhas, A. 2013; 114 (7)

  View details for DOI 10.1063/1.4818477

  View details for Web of Science ID 000323510900075

• Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates JOURNAL OF APPLIED PHYSICS Mukherjee, K., Beaton, D. A., Christian, T., Jones, E. J., Alberi, K., Mascarenhas, A., Bulsara, M. T., Fitzgerald, E. A. 2013; 113 (18)

  View details for DOI 10.1063/1.4804264

  View details for Web of Science ID 000319294100026

• Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Pacella, N. Y., Mukherjee, K., Bulsara, M. T., Fitzgerald, E. A. 2013; 2 (7): P324–P331

  View details for DOI 10.1149/2.015307jss

  View details for Web of Science ID 000320306300005

• Electron transport in electrospun TiO2 nanofiber dye-sensitized solar cells APPLIED PHYSICS LETTERS Mukherjee, K., Teng, T., Jose, R., Ramakrishna, S. 2009; 95 (1)

  View details for DOI 10.1063/1.3167298

  View details for Web of Science ID 000267983200033