All Publications

  • Unusual magnetotransport in twisted bilayer graphene from strain-induced open Fermi surfaces. Proceedings of the National Academy of Sciences of the United States of America Wang, X., Finney, J., Sharpe, A. L., Rodenbach, L. K., Hsueh, C. L., Watanabe, K., Taniguchi, T., Kastner, M. A., Vafek, O., Goldhaber-Gordon, D. 2023; 120 (34): e2307151120


    Anisotropic hopping in a toy Hofstadter model was recently invoked to explain a rich and surprising Landau spectrum measured in twisted bilayer graphene away from the magic angle. Suspecting that such anisotropy could arise from unintended uniaxial strain, we extend the Bistritzer-MacDonald model to include uniaxial heterostrain and present a detailed analysis of its impact on band structure and magnetotransport. We find that such strain strongly influences band structure, shifting the three otherwise-degenerate van Hove points to different energies. Coupled to a Boltzmann magnetotransport calculation, this reproduces previously unexplained nonsaturating [Formula: see text] magnetoresistance over broad ranges of density near filling [Formula: see text] and predicts subtler features that had not been noticed in the experimental data. In contrast to these distinctive signatures in longitudinal resistivity, the Hall coefficient is barely influenced by strain, to the extent that it still shows a single sign change on each side of the charge neutrality point-surprisingly, this sign change no longer occurs at a van Hove point. The theory also predicts a marked rotation of the electrical transport principal axes as a function of filling even for fixed strain and for rigid bands. More careful examination of interaction-induced nematic order versus strain effects in twisted bilayer graphene could thus be in order.

    View details for DOI 10.1073/pnas.2307151120

    View details for PubMedID 37579169

  • Low-damage electron beam lithography for nanostructures on Bi2Se3-class topological insulator thin films JOURNAL OF APPLIED PHYSICS Andersen, M. P., Rodenbach, L. K., Rosen, I. T., Lin, S. C., Pan, L., Zhang, P., Tai, L., Wang, K. L., Kastner, M. A., Goldhaber-Gordon, D. 2023; 133 (24)

    View details for DOI 10.1063/5.0144726

    View details for Web of Science ID 001031342700006

  • Measured Potential Profile in a Quantum Anomalous Hall System Suggests Bulk-Dominated Current Flow. Physical review letters Rosen, I. T., Andersen, M. P., Rodenbach, L. K., Tai, L., Zhang, P., Wang, K. L., Kastner, M. A., Goldhaber-Gordon, D. 2022; 129 (24): 246602


    Ideally, quantum anomalous Hall systems should display zero longitudinal resistance. Yet in experimental quantum anomalous Hall systems elevated temperature can make the longitudinal resistance finite, indicating dissipative flow of electrons. Here, we show that the measured potentials at multiple locations within a device at elevated temperature are well described by solution of Laplace's equation, assuming spatially uniform conductivity, suggesting nonequilibrium current flows through the two-dimensional bulk. Extrapolation suggests that at even lower temperatures current may still flow primarily through the bulk rather than, as had been assumed, through edge modes. An argument for bulk current flow previously applied to quantum Hall systems supports this picture.

    View details for DOI 10.1103/PhysRevLett.129.246602

    View details for PubMedID 36563259

  • Metrological Assessment of Quantum Anomalous Hall Properties PHYSICAL REVIEW APPLIED Rodenbach, L. K., Panna, A. R., Payagala, S. U., Rosen, I. T., Andersen, M. P., Zhang, P., Tai, L., Wang, K. L., Jarrett, D. G., Elmquist, R. E., Newell, D. B., Goldhaber-Gordon, D., Rigosi, A. F. 2022; 18 (3)
  • Nanoscale Electronic Transparency of Wafer-Scale Hexagonal Boron Nitride. Nano letters Zerger, C. Z., Rodenbach, L. K., Chen, Y., Safvati, B., Brubaker, M. Z., Tran, S., Chen, T., Li, M., Li, L., Goldhaber-Gordon, D., Manoharan, H. C. 2022


    Monolayer hexagonal boron nitride (hBN) has attracted interest as an ultrathin tunnel barrier or environmental protection layer. Recently, wafer-scale hBN growth on Cu(111) was developed for semiconductor chip applications. For basic research and technology, understanding how hBN perturbs underlying electronically active layers is critical. Encouragingly, hBN/Cu(111) has been shown to preserve the Cu(111) surface state (SS), but it was unknown how tunneling into this SS through hBN varies spatially. Here, we demonstrate that the Cu(111) SS under wafer-scale hBN is homogeneous in energy and spectral weight over nanometer length scales and across atomic terraces. In contrast, a new spectral feature─not seen on bare Cu(111)─varies with atomic registry and shares the spatial periodicity of the hBN/Cu(111) moire. This work demonstrates that, for some 2D electron systems, an hBN overlayer can act as a protective yet remarkably transparent window on fragile low-energy electronic structure below.

    View details for DOI 10.1021/acs.nanolett.1c04274

    View details for PubMedID 35536749

  • Bulk dissipation in the quantum anomalous Hall effect APL MATERIALS Rodenbach, L. K., Rosen, I. T., Fox, E. J., Zhang, P., Pan, L., Wang, K. L., Kastner, M. A., Goldhaber-Gordon, D. 2021; 9 (8)

    View details for DOI 10.1063/5.0056796

    View details for Web of Science ID 000687351800002