Professional Education


  • Doctor of Philosophy, KTH Royal Institute of Technology, Nanoelectronics (2016)
  • Master of Science, KTH Royal Institute of Technology, Nanotechnology (2011)
  • Master of Science, KNT University of Technology, Solid State Physics
  • Bachelor of Science, Shahid Beheshti University, Solid State Physics

Stanford Advisors


  • Eric Pop, Postdoctoral Faculty Sponsor

All Publications


  • Process-induced anomalous current transport in graphene/InAlN/GaN heterostructured diodes Satterthwaite, P. F., Yalamarthy, A., Vaziri, S., Rojo, M., Pop, E., Senesky, D. G., IEEE IEEE. 2019
  • Thermal transport across graphene step junctions 2D MATERIALS Rojo, M., Li, Z., Sievers, C., Bornstein, A. C., Yalon, E., Deshmukh, S., Vaziri, S., Bae, M., Xiong, F., Donadio, D., Pop, E. 2019; 6 (1)
  • Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved Thermometry Deshmukh, S., Rojo, M., Yalon, E., Vaziri, S., Pop, E., IEEE IEEE. 2018
  • Vertical Charge Transfer and Lateral Transport in Graphene/Germanium Heterostructures. ACS applied materials & interfaces Kazemi, A., Vaziri, S., Aguirre Morales, J. D., Frégonèse, S., Cavallo, F., Zamiri, M., Dawson, N., Artyushkova, K., Jiang, Y. B., Brueck, S. J., Krishna, S. 2017; 9 (18): 15830-15840

    Abstract

    Heterostructures consisting of two-dimensional (2D) materials and conventional semiconductors have attracted a lot of attention due to their application in novel device concepts. In this work, we investigated the lateral transport characteristics of graphene/germanium heterostructures and compared them with the transport properties of graphene on SiO2. The heterostructures were fabricated by transferring a single layer of graphene (Gr) onto a lightly doped germanium (Ge) (100) substrate. The field-effect measurements revealed a shift in the Dirac voltage of Gr on the Ge substrates compared to that of the Gr on SiO2. Transfer length model measurements show a significant difference in the sheet resistance of Gr on Ge compared to that of the Gr on SiO2. The results from the electrical and structural characterization suggest that a charge transfer in the order of 10(12) cm(-2) occurs between Gr and Ge resulting in a doping effect in the graphene sheet. A compact electrostatic model extracted the key electronic properties of the Gr/Ge interface. This study provides valuable insights into the electronic properties of Gr on Ge, which are vital to the development of novel devices based on mixed 2D and 3D structures.

    View details for DOI 10.1021/acsami.7b01424

    View details for PubMedID 28425287