Education & Certifications

  • B.S., Villanova University Honors Program, Mechanical Engineering:Thermal-Fluid Systems (2016)

All Publications

  • The Role of Bicarbonate-Based Electrolytes in H2O2 Production through Two-Electron Water Oxidation ACS ENERGY LETTERS Gill, T., Vallez, L., Zheng, X. 2021; 6 (8): 2854-2862
  • Electrochemical Synthesis of H2O2 by Two-Electron Water Oxidation Reaction CHEM Shi, X., Back, S., Gill, T., Siahrostami, S., Zheng, X. 2021; 7 (1): 38–63
  • Enhancing combustion performance of nano-Al/PVDF composites with beta-PVDF COMBUSTION AND FLAME Huang, S., Hong, S., Su, Y., Jiang, Y., Fukushima, S., Gill, T., Yilmaz, N., Tiwari, S., Nomura, K., Kalia, R. K., Nakano, A., Shimojo, F., Vashishta, P., Chen, M., Zheng, X. 2020; 219: 467–77
  • Comparing Methods for Quantifying Electrochemically Accumulated H2O2 CHEMISTRY OF MATERIALS Gill, T., Zheng, X. 2020; 32 (15): 6285–94
  • Effect of Adventitious Carbon on Pit Formation of Monolayer MoS2. Advanced materials (Deerfield Beach, Fla.) Park, S., Siahrostami, S., Park, J., Mostaghimi, A. H., Kim, T. R., Vallez, L., Gill, T. M., Park, W., Goodson, K. E., Sinclair, R., Zheng, X. 2020: e2003020


    Forming pits on molybdenum disulfide (MoS2 ) monolayers is desirable for (opto)electrical, catalytic, and biological applications. Thermal oxidation is a potentially scalable method to generate pits on monolayer MoS2 , and pits are assumed to preferentially form around undercoordinated sites, such as sulfur vacancies. However, studies on thermal oxidation of MoS2 monolayers have not considered the effect of adventitious carbon (C) that is ubiquitous and interacts with oxygen at elevated temperatures. Herein, the effect of adventitious C on the pit formation on MoS2 monolayers during thermal oxidation is studied. The in situ environmental transmission electron microscopy measurements herein show that pit formation is preferentially initiated at the interface between adventitious C nanoparticles and MoS2 , rather than only sulfur vacancies. Density functional theory (DFT) calculations reveal that the C/MoS2 interface favors the sequential adsorption of oxygen atoms with facile kinetics. These results illustrate the important role of adventitious C on pit formation on monolayer MoS2 .

    View details for DOI 10.1002/adma.202003020

    View details for PubMedID 32743836

  • On-demand production of hydrogen by reacting porous silicon nanowires with water NANO RESEARCH Ning, R., Jiang, Y., Zeng, Y., Gong, H., Zhao, J., Weisse, J., Shi, X., Gill, T. M., Zheng, X. 2020
  • A Zn: BiVO4/ Mo: BiVO4 homojunction as an efficient photoanode for photoelectrochemical water splitting JOURNAL OF MATERIALS CHEMISTRY A Lee, J., Baek, J., Gill, T., Shi, X., Lee, S., Cho, I., Jung, H., Zheng, X. 2019; 7 (15): 9019–24

    View details for DOI 10.1039/c9ta00205g

    View details for Web of Science ID 000465152700032

  • Selective and Efficient Gd-Doped BiVO4 Photoanode for Two-Electron Water Oxidation to H2O2 ACS ENERGY LETTERS Baek, J., Gill, T., Abroshan, H., Park, S., Shi, X., Norskoy, J., Jung, H., Siahrostami, S., Zheng, X. 2019; 4 (3): 720–28
  • Conformal Electroless Nickel Plating on Silicon Wafers, Convex and Concave Pyramids, and Ultralong Nanowires ACS APPLIED MATERIALS & INTERFACES Gill, T., Zhao, J., Berenschot, E. W., Tas, N., Zheng, X. 2018; 10 (26): 22834-22840
  • Enabling silicon photoanodes for efficient solar water splitting by electroless-deposited nickel NANO RESEARCH Zhao, J., Gill, T., Zheng, X. 2018; 11 (6): 3499–3508
  • Conformal Electroless Nickel Plating on Silicon Wafers, Convex & Concave Pyramids, and Ultralong Nanowires. ACS applied materials & interfaces Gill, T. n., Zhao, J. n., Berenschot, E. J., Tas, N. n., Zheng, X. n. 2018


    Nickel (Ni) plating has garnered great commercial interest, as it provides excellent hardness, corrosion resistance, and electrical conductivity. Though Ni plating on conducting substrates is commonly employed via electrodeposition, plating on semiconductors and insulators often necessitates electroless approaches. Corresponding plating theory for deposition on planar substrates was developed as early as 1946, but for substrates with micro and nanoscale features, very little is known of the relationships between plating conditions, Ni deposition quality, and substrate morphology. Herein, we describe the general theory of the mechanisms of electroless Ni deposition on semiconducting silicon (Si) substrates, detailing plating bath failures and establishing relationships between critical plating bath parameters and the deposited Ni film quality. Through this theory, we develop two different plating recipes: galvanic displacement (GD) and autocatalytic deposition (ACD). Neither recipe requires pretreatment of the Si substrate and both methods are capable of depositing uniform Ni films on planar Si substrates and convex Si pyramids. In comparison, ACD has better tunability than GD, and it provides more conformal Ni coating on complex and high-aspect ratio Si structures, such as inverse fractal Si pyramids and ultralong Si nanowires. Our methodology and theoretical analyses can be leveraged to develop electroless plating processes for other metals and metal alloys and to generally provide direction for the adaptation of electroless deposition to modern applications.

    View details for PubMedID 29882649