Bio


Born April 26, 1930 in Flushing, New York. Grew up in Toledo, Ohio, then to Cornell University for Engineering Physics, B of EP in 1953. Married to Lucille Carley (Lucky) in 1954. PhD in Physics with Frederick Seitz as advisor, in 1956. Nine years in the Physical Metallurgy Section of the General Electric Research Laboratory. Four sons, Richard, John, William, and Robert. Professor of Ap[plied Physics at Stanford University from 1965 to 2001, then Emeritus. Employed by Acorn Technologies, Inc.

Academic Appointments


Honors & Awards


  • Fellow of the American Physical Society Guggenheim Award, Humboldt Fellow, APS

Current Research and Scholarly Interests


Theory of metal-semiconductor interfaces and field-effect transistors

2018-19 Courses


All Publications


  • Effective-mass theory of metal-semiconductor contact resistivity APPLIED PHYSICS LETTERS Harrison, W. A., Goebel, A., Clifton, P. A. 2013; 103 (8)

    View details for DOI 10.1063/1.4818265

    View details for Web of Science ID 000323788100012

  • Effects of matching conditions in effective-mass theory: Quantum wells, transmission, and metal-induced gap states JOURNAL OF APPLIED PHYSICS Harrison, W. A. 2011; 110 (11)

    View details for DOI 10.1063/1.3665716

    View details for Web of Science ID 000298254800065

  • Origin of Sr segregation at La1-xSrxMnO3 surfaces PHYSICAL REVIEW B Harrison, W. A. 2011; 83 (15)
  • Oxygen atoms and molecules at La1-xSrxMnO3 surfaces PHYSICAL REVIEW B Harrison, W. A. 2010; 81 (4)
  • Finding the Energy Bands of Silicon PHYSICS IN PERSPECTIVE Harrison, W. A. 2009; 11 (2): 198-208
  • Tight-binding theory of manganese and iron oxides PHYSICAL REVIEW B Harrison, W. A. 2008; 77 (24)
  • Heisenberg exchange in the magnetic monoxides PHYSICAL REVIEW B Harrison, W. A. 2007; 76 (5)
  • Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: Possibility of intrinsic doping PHYSICAL REVIEW LETTERS Siemons, W., Koster, G., Yamamoto, H., Harrison, W. A., Lucovsky, G., Geballe, T. H., Blank, D. H., Beasley, M. R. 2007; 98 (19)

    Abstract

    As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

    View details for DOI 10.1103/PhysRevLett.98.196802

    View details for Web of Science ID 000246413200040

    View details for PubMedID 17677645

  • A semiclassical model of dielectric relaxation in glasses JOURNAL OF APPLIED PHYSICS Jameson, J. R., Harrison, W., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 100 (12)

    View details for DOI 10.1063/1.2397323

    View details for Web of Science ID 000243157900069

  • Valence-skipping compounds as positive-U electronic systems PHYSICAL REVIEW B Harrison, W. A. 2006; 74 (24)
  • Tight-binding theory of the dielectric susceptibilities and transverse charges of insulators PHYSICAL REVIEW B Harrison, W. A. 2006; 74 (20)
  • Simple calculation of Madelung constants PHYSICAL REVIEW B Harrison, W. A. 2006; 73 (21)
  • STRUCTURAL STABILITY AND INTERATOMIC INTERACTIONS IN COVALENT SYSTEMS 20TH INTERNATIONAL CONF ON THE PHYSICS OF SEMICONDUCTORS Harrison, W. A. WORLD SCIENTIFIC PUBL CO PTE LTD. 1990: 1731–1734
  • TIGHT-BINDING THEORY OF MOLECULES AND SOLIDS PURE AND APPLIED CHEMISTRY Harrison, W. A. 1989; 61 (12): 2161-2169
  • CONSEQUENCES OF FERMI-SURFACE GEOMETRY INTERNATIONAL CONF ON MATERIALS AND MECHANISMS OF SUPERCONDUCTIVITY : HIGH TEMPERATURE SUPERCONDUCTORS 2 Harrison, W. A. ELSEVIER SCIENCE BV. 1989: 769–770
  • LATTICE-RELAXATION AROUND SUBSTITUTIONAL DEFECTS IN SEMICONDUCTORS PHYSICAL REVIEW B Bechstedt, F., Harrison, W. A. 1989; 39 (8): 5041-5050
  • SUPERCONDUCTIVITY ON A YBA2CU3O7 LATTICE PHYSICAL REVIEW B Harrison, W. A. 1988; 38 (1): 270-283
  • CITATION CLASSIC - PSEUDOPOTENTIALS IN THE THEORY OF METALS CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES Harrison, W. A. 1988: 18-18
  • CITATION CLASSIC - PSEUDOPOTENTIALS IN THE THEORY OF METALS CURRENT CONTENTS/PHYSICAL CHEMICAL & EARTH SCIENCES Harrison, W. A. 1988: 18-18
  • DIELECTRIC SCREENING IN SEMICONDUCTORS PHYSICAL REVIEW B Harrison, W. A., Klepeis, J. E. 1988; 37 (2): 864-873
  • OVERLAP INTERACTIONS AND BONDING IN IONIC SOLIDS PHYSICAL REVIEW B Harrison, W. A. 1986; 34 (4): 2787-2793
  • THEORY OF THE MULTICENTER BOND PHYSICAL REVIEW B VANSCHILFGAARDE, M., Harrison, W. A. 1986; 33 (4): 2653-2659
  • THEORY OF BAND LINE-UPS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Harrison, W. A. 1985; 3 (4): 1231-1238
  • ELECTRONIC-STRUCTURE OF BORON JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS VANSCHILFGAARDE, M., Harrison, W. A. 1985; 46 (9): 1093-1100
  • COULOMB INTERACTIONS IN SEMICONDUCTORS AND INSULATORS PHYSICAL REVIEW B Harrison, W. A. 1985; 31 (4): 2121-2132
  • ELECTRONIC-STRUCTURE AND THE PROPERTIES OF INTERFACES ULTRAMICROSCOPY Harrison, W. A. 1984; 14 (1-2): 85-87
  • THE BONDING PROPERTIES OF MERCURY CADMIUM TELLURIDE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Harrison, W. A. 1983; 1 (3): 1672-1673
  • INTERIONIC INTERACTIONS IN TRANSITION-METALS PHYSICAL REVIEW B Wills, J. M., Harrison, W. A. 1983; 28 (8): 4363-4373
  • NEW TIGHT-BINDING PARAMETERS FOR COVALENT SOLIDS OBTAINED USING LOUIE PERIPHERAL STATES PHYSICAL REVIEW B Harrison, W. A. 1981; 24 (10): 5835-5843
  • TOTAL ENERGIES IN THE TIGHT-BINDING THEORY PHYSICAL REVIEW B Harrison, W. A. 1981; 23 (10): 5230-5245
  • SEMICONDUCTOR PROPERTIES BASED UPON UNIVERSAL TIGHT-BINDING PARAMETERS PHYSICAL REVIEW B Ren, S. Y., Harrison, W. A. 1981; 23 (2): 762-770
  • UNIVERSAL LINEAR-COMBINATION-OF-ATOMIC-ORBITALS PARAMETERS FOR D-STATE SOLIDS PHYSICAL REVIEW B Harrison, W. A., FROYEN, S. 1980; 21 (8): 3214-3221
  • THEORY OF POLAR SEMICONDUCTOR SURFACES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY Harrison, W. A. 1979; 16 (5): 1492-1496
  • 2-DIMENSIONAL ECHOCARDIOGRAPHIC QUANTIFICATION OF INFARCT SIZE ALTERATION BY PHARMACOLOGIC AGENTS AMERICAN JOURNAL OF CARDIOLOGY Meltzer, R. S., WOYTHALER, J. N., Buda, A. J., Griffin, J. C., Harrison, W. D., Martin, R. P., HARRISON, D. C., Popp, R. L. 1979; 44 (2): 257-262
  • ELEMENTARY PREDICTION OF LINEAR COMBINATION OF ATOMIC ORBITALS MATRIX-ELEMENTS PHYSICAL REVIEW B FROYEN, S., Harrison, W. A. 1979; 20 (6): 2420-2422
  • ELEMENTARY THEORY OF HETEROJUNCTIONS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY Harrison, W. A. 1977; 14 (4): 1016-1021
  • SURFACE RECONSTRUCTION ON SEMICONDUCTORS SURFACE SCIENCE Harrison, W. A. 1976; 55 (1): 1-19
  • EXTENSION OF GORDON-KIM OVERLAP INTERACTION TO OPEN-SHELL SYSTEMS JOURNAL OF CHEMICAL PHYSICS Harrison, W. A., SOKEL, R. 1976; 65 (1): 379-381
  • PSEUDOPOTENTIAL THEORY OF COVALENT BONDING PHYSICAL REVIEW B Harrison, W. A. 1976; 14 (2): 702-711
  • SCHOTTKY BARRIERS WITHOUT MIDGAP STATES PHYSICAL REVIEW LETTERS Harrison, W. A. 1976; 37 (5): 312-313
  • STRUCTURE OF VALENCE BANDS OF ZINCBLENDE-TYPE SEMICONDUCTORS PHYSICAL REVIEW B Pantelides, S. T., Harrison, W. A. 1975; 11 (8): 3006-3021
  • ANGULAR FORCES IN TETRAHEDRAL SOLIDS PHYSICAL REVIEW LETTERS Harrison, W. A., Phillips, J. C. 1974; 33 (7): 410-411
  • BOND-ORBITAL MODEL .2. PHYSICAL REVIEW B Harrison, W. A., Ciraci, S. 1974; 10 (4): 1516-1527
  • MULTI-ION INTERACTIONS AND STRUCTURES IN SIMPLE METALS PHYSICAL REVIEW B Harrison, W. A. 1973; 7 (6): 2408-2415
  • ORBITAL-CORRECTION METHOD PHYSICAL REVIEW A Harrison, W. A. 1973; 7 (6): 1876-1888
  • BOND-ORBITAL MODEL AND PROPERTIES OF TETRAHEDRALLY COORDINATED SOLIDS PHYSICAL REVIEW B Harrison, W. A. 1973; 8 (10): 4487-4498