All Publications


  • A Multiresonant Gate Driver for High-Frequency Resonant Converters IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS Gu, L., Tong, Z., Liang, W., Rivas-Davila, J. 2020; 67 (2): 1405–14
  • On the Techniques to Utilize SiC Power Devices in High- and Very High-Frequency Power Converters IEEE TRANSACTIONS ON POWER ELECTRONICS Tong, Z., Gu, L., Ye, Z., Surakitbovorn, K., Rivas-Davila, J. 2019; 34 (12): 12181–92
  • Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS Tong, Z., Zulauf, G., Xu, J., Plummer, A. D., Rivas-Davila, J. 2019; 7 (2): 865–78
  • Empirical Circuit Model for Output Capacitance Losses in Silicon Carbide Power Devices Tong, Z., Park, S., Rivas-Davila, J., IEEE IEEE. 2019: 998–1003
  • Gate Drive for Very Fast Resonant Conversion using SiC Switch Tong, Z., Gu, L., Surakitbovorn, K., Rivas-Davila, J. M., IEEE IEEE. 2019: 6647–54
  • 3-D Printed Air-Core Toroidal Transformer for High-Frequency Power Conversion Tong, Z., Braun, W. D., Rivas-Davila, J. M., IEEE IEEE. 2019
  • Active Power Device Selection in High- and Very-High-Frequency Power Converters IEEE Transactions on Power Electronics Zulauf, G. D., Tong, Z., Plummer, J. D., Rivas-Davila, J. M. 2018: 1
  • A Study on Off-State Losses in Silicon-Carbide Schottky Diodes Tong, Z., Zulauf, G., Rivas-Davila, J., IEEE IEEE. 2018
  • Considerations for Active Power Device Selection in High- and Very-High-Frequency Power Converters Zulauf, G., Tong, Z., Rivas-Davila, J., IEEE IEEE. 2018