Nicolo Danna

All Publications

• Dynamic Nanoscale Spatial Heterogeneity in a Perovskite-to-Brownmillerite Topotactic Phase Transformation ACS APPLIED MATERIALS & INTERFACES D'Anna, N., Lamb, E. S., Glefke, R., Ham, D., Nihal, I., Lee, S., Takamura, Y., Shpyrko, O. G. 2026

  Abstract

  Phase transitions are omnipresent in modern condensed matter physics and its applications. In solids, first-order phase transformations typically occur by nucleation and growth under nonequilibrium conditions. Under constant external conditions, e.g., constant annealing temperature and pressure, the nucleation and growth dynamics are often thought of as spatially and temporally independent. Here, in situ Bragg X-ray photon correlation spectroscopy (XPCS) reveals nanoscale spatial and dynamical heterogeneity in the perovskite-to-brownmillerite topotactic phase transformation in La0.7Sr0.3CoO3 thin films annealed under constant reducing conditions over a time span of multiple hours. Specifically, a time scale associated with domain growth remains stable, with a corresponding domain wall speed of vd = 6 ± 0.5 × 10-4 nm/s (2 ± 0.2 nm/h), while a slower time scale, associated with temperature-driven depinning of domains, leads to accelerating dynamics with time scales following an aging power law with exponent -2.2 ± 0.5. This experiment demonstrates that Bragg XPCS is a powerful tool to study nanoscale dynamics in structural phase transformations, with the ability to extract quantitative average values related to nanodomain motion in situ. The results are relevant for phase engineering of phase-change devices, as they show that nanoscale dynamics, linked to domain and domain-wall motion, can continuously evolve and speed up with time, even hours after the initiation of the phase transformation, with potential repercussions on electrical performance.

  View details for DOI 10.1021/acsami.6c01097

  View details for Web of Science ID 001786442000001

  View details for PubMedID 42247683

• Advancing Battery Manufacturing: Synchrotron Characterization for Industry CHEMICAL REVIEWS Koh, H., Burrow, J. N., D'anna, N., Zhang, H., Beatriceveena, T., Wang, J., Lai, J., Chen, Y., Cabana, J., Chan, M. K. Y., Crumlin, E. J., Fenter, P. A., Fister, T. T., Liu, D., Meng, Y., Shpyrko, O., Wiaderek, K., Hatzell, K. B. 2026; 126 (5): 3089-3124

  Abstract

  Large-scale battery manufacturing requires understanding the fundamental principles of materials and interfaces and relies on advanced techniques for detailed interrogation. Despite advancements in the industrial scale production and their associated quality control tools, challenges such as electrode heterogeneity, internal defects, and large-scale material waste (e.g., scrap) can hamper manufacturing. Synchrotron X-ray characterization techniques offer spatial, temporal, and chemical resolution that can provide diagnostic insights for metrology across various manufacturing steps. This review examines the use of synchrotron tools to advance understanding of key steps in the battery manufacturing process. Recent examples demonstrate how synchrotron methods resolve manufacturing challenges and uncover degradation pathways that are otherwise inaccessible. Future directions for advancing battery manufacturing emphasize collaboration between academia and industry through the use of synchrotron X-ray techniques.

  View details for DOI 10.1021/acs.chemrev.5c00772

  View details for Web of Science ID 001703274200001

  View details for PubMedID 41759497

  View details for PubMedCentralID PMC12983208

• Self-Strain Suppression of the Metal-to-Insulator Transition in Phase-Change Oxide Devices SMALL D'Anna, N., Ghazikhanian, N., Lamb, E. S., Zatterin, E., Wan, M., Thorshov, A., Schuller, I. K., Shpyrko, O. 2026; 22 (5): e09287

  Abstract

  Strongly correlated materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built-in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase-change oxides, which allow for control over the metal-to-insulator transition. Here, X-ray nano-diffraction structural imaging of micro-devices fabricated with the archetypal phase-change material vanadium sesquioxide (V2O3) is reported. The devices contain a Ga ion-irradiated region where the metal-to-insulator transition critical temperature is lowered, a useful feature for controlling neuron-like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal-to-insulator-transition. Suppression occurs within the irradiated region or along its edges, depending on the defect-distribution and the size of the region. The observed self-straining effect can extend to other phase-change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase-change devices and highlight the necessity to study phase transitions at the nanoscale.

  View details for DOI 10.1002/smll.202509287

  View details for Web of Science ID 001630025500001

  View details for PubMedID 41340420