Bio

Since his master’s and PhD at ETH, Nicolò D’Anna’s research has been dedicated to understanding and controlling quantum states of matter in low-dimensional solid-state systems. During his PhD he specialized in ultra-low-temperature magneto-transport to study dopant layers and structures in silicon for quantum computing. During his postdoc at UCSD, he focused on utilizing advanced coherent X-ray diffraction techniques to investigate metal-to-insulator transition switching in metal-oxides for neuromorphic applications. Currently, as an Urbanek-Chodorow postdoctoral fellow, he aims to achieve ultra-fast time-resolved optical interrogation and control of low-temperature quantum phases in synthetic stacked van-der-Waals systems, with a particular focus on magic-angle twisted bilayer graphene.

Stanford Advisors

Contact

  • Academic
    ndanna@stanford.edu
    University - Scholar Department: Applied Physics Position: Postdoctoral Scholar

Additional Info

All Publications

  • Self-Strain Suppression of the Metal-to-Insulator Transition in Phase-Change Oxide Devices SMALL D'Anna, N., Ghazikhanian, N., Lamb, E. S., Zatterin, E., Wan, M., Thorshov, A., Schuller, I. K., Shpyrko, O. 2026; 22 (5): e09287

    Abstract

    Strongly correlated materials exhibiting phase transitions which can be controlled through external stimuli, such as electric fields, are promising for future computing technologies beyond conventional semiconductor transistors. Devices that take advantage of structural phase transitions have inherent built-in memory, reminiscent of synapses and neurons, and are thus natural candidates for neuromorphic computing. Of particular interest are phase-change oxides, which allow for control over the metal-to-insulator transition. Here, X-ray nano-diffraction structural imaging of micro-devices fabricated with the archetypal phase-change material vanadium sesquioxide (V2O3) is reported. The devices contain a Ga ion-irradiated region where the metal-to-insulator transition critical temperature is lowered, a useful feature for controlling neuron-like spiking behavior. Results show that strain, induced by crystal lattice mismatch between the pristine and irradiated material, leads to a suppression of the metal-to-insulator-transition. Suppression occurs within the irradiated region or along its edges, depending on the defect-distribution and the size of the region. The observed self-straining effect can extend to other phase-change oxides and dominate as device dimensions are reduced and become too small to dissipate strain within the irradiated region. The findings are important for phase engineering in phase-change devices and highlight the necessity to study phase transitions at the nanoscale.

    View details for DOI 10.1002/smll.202509287

    View details for Web of Science ID 001630025500001

    View details for PubMedID 41340420

https://orcid.org/0000-0001-5953-7521