Bio

Anton Persson is a postdoctoral researcher in the Electrical Engineering Department at Stanford University, supervised by Professor Eric Pop. Prior to joining Stanford, he received his PhD in Electrical Engineering from Lund University, Sweden, in 2023 and his M.Sc. in Engineering Physics from Chalmers University of Technology, Sweden, in 2018. At Stanford, he researches emerging memristor technologies for in-memory computing applications, including phase change materials and ferroelectrics integrated onto 2D-materials.

Professional Education

  • Doctor of Philosophy, Lunds Universitet (2023)
  • PhD, Lund University, Electrical Engineering (2023)
  • M.Sc., Chalmers University of Technology, Engineering Physics (2018)

Stanford Advisors

  • Eric Pop, Postdoctoral Faculty Sponsor

Contact

  • Academic
    antonper@stanford.edu
    University - Scholar Department: Electrical Engineering Position: Postdoctoral Scholar

Additional Info

Links

All Publications

  • Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor NATURE COMMUNICATIONS Zhu, Z., Persson, A. O., Wernersson, L. 2023; 14 (1): 2530

    Abstract

    Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits.

    View details for DOI 10.1038/s41467-023-38242-w

    View details for Web of Science ID 001025174300001

    View details for PubMedID 37137907

    View details for PubMedCentralID PMC10156808

  • Sensing single domains and individual defects in scaled ferroelectrics SCIENCE ADVANCES Zhu, Z., Persson, A. O., Wernersson, L. 2023; 9 (5): eade7098

    Abstract

    Ultra-scaled ferroelectrics are desirable for high-density nonvolatile memories and neuromorphic computing; however, for advanced applications, single domain dynamics and defect behavior need to be understood at scaled geometries. Here, we demonstrate the integration of a ferroelectric gate stack on a heterostructure tunnel field-effect transistor (TFET) with subthermionic operation. On the basis of the ultrashort effective channel created by the band-to-band tunneling process, the localized potential variations induced by single domains and individual defects are sensed without physical gate-length scaling required for conventional transistors. We electrically measure abrupt threshold voltage shifts and quantify the appearance of new individual defects activated by the ferroelectric switching. Our results show that ferroelectric films can be integrated on heterostructure devices and indicate that the intrinsic electrostatic control within ferroelectric TFETs provides the opportunity for ultrasensitive scale-free detection of single domains and defects in ultra-scaled ferroelectrics. Our approach opens a previously unidentified path for investigating the ultimate scaling limits of ferroelectronics.

    View details for DOI 10.1126/sciadv.ade7098

    View details for Web of Science ID 000960602300017

    View details for PubMedID 36735784

    View details for PubMedCentralID PMC9897661

  • Ferroelectric-Antiferroelectric Transition of Hf1-XZrXO2 on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf0.2Zr0.8O2 ACS APPLIED ELECTRONIC MATERIALS Dahlberg, H., Persson, A. O., Athle, R., Wernersson, L. 2022; 4 (12): 6357-6363

    Abstract

    The ferroelectric (FE)-antiferroelectric (AFE) transition in Hf1-x Zr x O2 (HZO) is for the first time shown in a metal-ferroelectric-semiconductor (MFS) stack based on the III-V material InAs. As InAs displays excellent electron mobility and a narrow band gap, the integration of ferroelectric thin films for nonvolatile operations is highly relevant for future electronic devices and motivates further research on ferroelectric integration. When increasing the Zr fraction x from 0.5 to 1, the stack permittivity increases as expected, and the transition from FE to AFE-like behavior is observed by polarization and current-voltage characteristics. At x = 0.8 the polarization of the InAs-based stacks shows a larger FE-contribution as a more open hysteresis compared to both literature and reference metal-ferroelectric-metal (MFM) devices. By field-cycling the devices, the switching domains are studied as a function of the cycle number, showing that the difference in FE-AFE contributions for MFM and MFS devices is stable over switching and not an effect of wake-up. The FE contribution of the switching can be accessed by successively lowering the bias voltage in a proposed pulse train. The possibility of enhanced nonvolatility in Zr-rich HZO is relevant for device stacks that would benefit from an increase in permittivity and a lower operating voltage. Additionally, an interfacial layer (IL) is introduced between the HZO film and the InAs substrate. The interfacial quality is investigated as frequency-dependent capacitive dispersion, showing little change for varying ZrO2 concentrations and with or without included IL. This suggests material processing that is independently limiting the interfacial quality. Improved endurance of the InAs-Hf1-x Zr x O2 devices with x = 0.8 was also observed compared to x = 0.5, with further improvement with the additional IL for Zr-rich HZO on InAs.

    View details for DOI 10.1021/acsaelm.2c01483

    View details for Web of Science ID 000898905900001

    View details for PubMedID 36588621

    View details for PubMedCentralID PMC9798826

  • Improved Endurance of Ferroelectric HfxZr1-xO2 Integrated on InAs Using Millisecond Annealing ADVANCED MATERIALS INTERFACES Athle, R., Blom, T., Irish, A., Persson, A. O., Wernersson, L., Timm, R., Borg, M. 2022; 9 (27)

    View details for DOI 10.1002/admi.202201038

    View details for Web of Science ID 000843733100001

  • As-deposited ferroelectric HZO on a III-V semiconductor APPLIED PHYSICS LETTERS Andersen, A., Persson, A. O., Wernersson, L. 2022; 121 (1)

    View details for DOI 10.1063/5.0097462

    View details for Web of Science ID 000822955800005

  • Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon IEEE ELECTRON DEVICE LETTERS Persson, A. O., Zhu, Z., Athle, R., Wernersson, L. 2022; 43 (6): 854-857

    View details for DOI 10.1109/LED.2022.3171597

    View details for Web of Science ID 000800191500009

  • Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1-xZrxO2 ACS APPLIED ELECTRONIC MATERIALS Athle, R., Persson, A. O., Troian, A., Borg, M. 2022; 4 (3): 1002-1009

    View details for DOI 10.1021/acsaelm.1c01181

    View details for Web of Science ID 000795896500013

  • Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1-xZrxO2 ACS APPLIED MATERIALS & INTERFACES Athle, R., Persson, A. O., Irish, A., Menon, H., Timm, R., Borg, M. 2021; 13 (9): 11089-11095

    Abstract

    Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf1-xZrxO2. By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization (Pr). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf1-xZrxO2 film. These results help explain the large Pr variation reported in the literature for Hf1-xZrxO2/TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.

    View details for DOI 10.1021/acsami.1c01734

    View details for Web of Science ID 000629054100040

    View details for PubMedID 33625827

    View details for PubMedCentralID PMC8027987

  • A method for estimating defects in ferroelectric thin film MOSCAPs APPLIED PHYSICS LETTERS Persson, A. O., Athle, R., Svensson, J., Borg, M., Wernersson, L. 2020; 117 (24)

    View details for DOI 10.1063/5.0029210

    View details for Web of Science ID 000599762900002

  • Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization APPLIED PHYSICS LETTERS Persson, A. O., Athle, R., Littow, P., Persson, K., Svensson, J., Borg, M., Wernersson, L. 2020; 116 (6)

    View details for DOI 10.1063/1.5141403

    View details for Web of Science ID 000538719400002

  • Multidimensional Hybridization of Dark Surface Plasmons ACS NANO Yankovich, A. B., Verre, R., Olsen, E., Persson, A. O., Trinh, V., Dovner, G., Kall, M., Olsson, E. 2017; 11 (4): 4265-4274

    Abstract

    Synthetic three-dimensional (3D) nanoarchitectures are providing more control over light-matter interactions and rapidly progressing photonic-based technology. These applications often utilize the strong synergy between electromagnetic fields and surface plasmons (SPs) in metallic nanostructures. However, many of the SP interactions hosted by complex 3D nanostructures are poorly understood because they involve dark hybridized states that are typically undetectable with far-field optical spectroscopy. Here, we use experimental and theoretical electron energy loss spectroscopy to elucidate dark SPs and their interactions in layered metal-insulator-metal disc nanostructures. We go beyond the established dipole SP hybridization analysis by measuring breathing and multipolar SP hybridization. In addition, we reveal multidimensional SP hybridization that simultaneously utilizes in-plane and out-of-plane SP coupling. Near-field classic electrodynamics calculations provide excellent agreement with all experiments. These results advance the fundamental understanding of SP hybridization in 3D nanostructures and provide avenues to further tune the interaction between electromagnetic fields and matter.

    View details for DOI 10.1021/acsnano.7b01318

    View details for Web of Science ID 000400233200088

    View details for PubMedID 28350962

https://orcid.org/0000-0003-0895-096X