Stanford Advisors

Contact

  • Academic
    canwu@stanford.edu
    University - Scholar Department: Chemical Engineering Position: Postdoctoral Scholar

Additional Info

  • Mail Code: 4300

Links

All Publications

  • Shear-aligned large-area organic semiconductor crystals through extended pi-pi interaction JOURNAL OF MATERIALS CHEMISTRY C Zhang, S., Talnack, F., Jousselin-Oba, T., Bhat, V., Wu, Y., Lei, Y., Tomo, Y., Gong, H., Michalek, L., Zhong, D., Wu, C., Yassar, A., Mannsfeld, S., Risko, C., Frigoli, M., Bao, Z. 2023

    View details for DOI 10.1039/d3tc01311a

    View details for Web of Science ID 001006838400001

  • Cost-Effective, Transfer-Free, Flexible Resistive Random Access Memory Using Laser-Scribed Reduced Graphene Oxide Patterning Technology NANO LETTERS Tian, H., Chen, H., Ren, T., Li, C., Xue, Q., Mohammad, M. A., Wu, C., Yang, Y., Wong, H. P. 2014; 14 (6): 3214-3219

    Abstract

    Laser scribing is an attractive reduced graphene oxide (rGO) growth and patterning technology because the process is low-cost, time-efficient, transfer-free, and flexible. Various laser-scribed rGO (LSG) components such as capacitors, gas sensors, and strain sensors have been demonstrated. However, obstacles remain toward practical application of the technology where all the components of a system are fabricated using laser scribing. Memory components, if developed, will substantially broaden the application space of low-cost, flexible electronic systems. For the first time, a low-cost approach to fabricate resistive random access memory (ReRAM) using laser-scribed rGO as the bottom electrode is experimentally demonstrated. The one-step laser scribing technology allows transfer-free rGO synthesis directly on flexible substrates or non-flat substrates. Using this time-efficient laser-scribing technology, the patterning of a memory-array area up to 100 cm(2) can be completed in 25 min. Without requiring the photoresist coating for lithography, the surface of patterned rGO remains as clean as its pristine state. Ag/HfOx/LSG ReRAM using laser-scribing technology is fabricated in this work. Comprehensive electrical characteristics are presented including forming-free behavior, stable switching, reasonable reliability performance and potential for 2-bit storage per memory cell. The results suggest that laser-scribing technology can potentially produce more cost-effective and time-effective rGO-based circuits and systems for practical applications.

    View details for DOI 10.1021/nl5005916

    View details for Web of Science ID 000337337100037