Debbie Senesky

All Publications

• Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments APPLIED PHYSICS LETTERS Xie, Q., Niroula, J., Rajput, N. S., Yuan, M., Luo, S., Fu, K., Isamotu, M., Palash, R., Sikder, B., Eisner, S. R., Surdi, H., Belanger, A. J., Darmawi-Iskandar, P. K., Aksamija, Z., Nemanich, R. J., Goodnick, S. M., Senesky, D. G., Hunter, G. W., Chowdhury, N., Zhao, Y., Palacios, T. 2024; 124 (17)

  View details for DOI 10.1063/5.0186976

  View details for Web of Science ID 001206889200004

• Autoclave Design for Microgravity Hydrothermal Synthesis MICROGRAVITY SCIENCE AND TECHNOLOGY Frick, J. J., Ormsby, R., Li, Z., Ozbakir, Y., Liu, C., Cox, J. M., Carraro, C., Maboudian, R., Senesky, D. G. 2024; 36 (3)

  View details for DOI 10.1007/s12217-024-10109-9

  View details for Web of Science ID 001204632000001

• Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor IEEE TRANSACTIONS ON ELECTRON DEVICES Shetty, S., Eisner, S. R., Hassan, A., Lalwani, A., Baral, D., Mazur, Y. I., Senesky, D. G., Churchill, H. H., Chen, Z., Mantooth, H., Salamo, G. J. 2024

  View details for DOI 10.1109/TED.2024.3382643

  View details for Web of Science ID 001201914300001

• A DC to 25 MHz Current Sensing Interface for Hall-Effect Sensor IEEE SENSORS JOURNAL Hassan, A., Mahar, A., Shetty, S., Lalwani, A., Faruque, K., Paul, R., Senesky, D. G., Salamo, G. J., Mantooth, H. 2024; 24 (7): 10316-10325

  View details for DOI 10.1109/JSEN.2024.3360462

  View details for Web of Science ID 001245584800068

• Evidence for phonon hardening in laser-excited gold using x-ray diffraction at a hard x-ray free electron laser. Science advances Descamps, A., Ofori-Okai, B. K., Bistoni, O., Chen, Z., Cunningham, E., Fletcher, L. B., Hartley, N. J., Hastings, J. B., Khaghani, D., Mo, M., Nagler, B., Recoules, V., Redmer, R., Schörner, M., Senesky, D. G., Sun, P., Tsai, H. E., White, T. G., Glenzer, S. H., McBride, E. E. 2024; 10 (6): eadh5272

  Abstract

  Studies of laser-heated materials on femtosecond timescales have shown that the interatomic potential can be perturbed at sufficiently high laser intensities. For gold, it has been postulated to undergo a strong stiffening leading to an increase of the phonon energies, known as phonon hardening. Despite efforts to investigate this behavior, only measurements at low absorbed energy density have been performed, for which the interpretation of the experimental data remains ambiguous. By using in situ single-shot x-ray diffraction at a hard x-ray free-electron laser, the evolution of diffraction line intensities of laser-excited Au to a higher energy density provides evidence for phonon hardening.

  View details for DOI 10.1126/sciadv.adh5272

  View details for PubMedID 38335288

• Effect of Geometry on the Frequency Limit of GaAs/AlGaAs 2-D Electron Gas (2DEG) Hall Effect Sensors IEEE SENSORS LETTERS Lalwani, A., Giparakis, M., Arora, K., Maharaj, A., Levy, A., Strasser, G., Andrews, A., Koeck, H., Senesky, D. G. 2023; 7 (12)

  View details for DOI 10.1109/LSENS.2023.3320039

  View details for Web of Science ID 001105613800008

• Optimal sensor placement for permanent magnet synchronous motor condition monitoring using a digital twin-assisted fault diagnosis approach RELIABILITY ENGINEERING & SYSTEM SAFETY Kohtz, S., Zhao, J., Renteria, A., Lalwani, A., Xu, Y., Zhang, X., Haran, K., Senesky, D., Wang, P. 2024; 242

  View details for DOI 10.1016/j.ress.2023.109714

  View details for Web of Science ID 001110643400001

• THE RIGHT STUFF Materials grown in space are stronger and hardier than those created on the ground SCIENTIFIC AMERICAN Senesky, D. G. 2023; 329 (4): 40-47

  View details for Web of Science ID 001180327500010

• Thermal stability study of gallium nitride based magnetic field sensor JOURNAL OF APPLIED PHYSICS Shetty, S., Kuchuk, A., Zamani-Alavijeh, M., Hassan, A., Eisner, S. R., de Oliveira, F., Krone, A., Harris, J., Thompson, J. P., Eldose, N. M., Mazur, Y. I., Huitink, D., Senesky, D. G., Mantooth, H., Salamo, G. J. 2023; 134 (14)

  View details for DOI 10.1063/5.0156013

  View details for Web of Science ID 001082652600003

• Temperature and field dependencies of current leakage mechanisms in IrO_x contacts on InAlN/GaN heterostructures APPLIED PHYSICS LETTERS Eisner, S. R., Senesky, D. G. 2023; 123 (15)

  View details for DOI 10.1063/5.0171204

  View details for Web of Science ID 001083944200002

• Investigation of mechanical properties and structural integrity of graphene aerogels via molecular dynamics simulations. Physical chemistry chemical physics : PCCP Zheng, B., Liu, C., Li, Z., Carraro, C., Maboudian, R., Senesky, D. G., Gu, G. X. 2023

  Abstract

  Graphene aerogel (GA), a 3D carbon-based nanostructure built on 2D graphene sheets, is well known for being the lightest solid material ever synthesized. It also possesses many other exceptional properties, such as high specific surface area and large liquid absorption capacity, thanks to its ultra-high porosity. Computationally, the mechanical properties of GA have been studied by molecular dynamics (MD) simulations, which uncover nanoscale mechanisms beyond experimental observations. However, studies on how GA structures and properties evolve in response to simulation parameter changes, which provide valuable insights to experimentalists, have been lacking. In addition, the differences between the calculated properties via simulations and experimental measurements have rarely been discussed. To address the shortcomings mentioned above, in this study, we systematically study various mechanical properties and the structural integrity of GA as a function of a wide range of simulation parameters. Results show that during the in silico GA preparation, smaller and less spherical inclusions (mimicking the effect of water clusters in experiments) are conducive to strength and stiffness but may lead to brittleness. Additionally, it is revealed that a structurally valid GA in the MD simulation requires the number of bonds per atom to be at least 1.40, otherwise the GA building blocks are not fully interconnected. Finally, our calculation results are compared with experiments to showcase both the power and the limitations of the simulation technique. This work may shed light on the improvement of computational approaches for GA as well as other novel nanomaterials.

  View details for DOI 10.1039/d3cp02585c

  View details for PubMedID 37580983

• Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation IEEE ELECTRON DEVICE LETTERS Yuan, M., Niroula, J., Xie, Q., Rajput, N. S., Fu, K., Luo, S., Das, S., Bin Iqbal, A., Sikder, B., Isamotu, M., Oh, M., Eisner, S. R., Senesky, D. G., Hunter, G. W., Chowdhury, N., Zhao, Y., Palacios, T. 2023; 44 (7): 1068-1071

  View details for DOI 10.1109/LED.2023.3279813

  View details for Web of Science ID 001021302800010

• Synthesis and characterization of UiO-66-NH2 incorporated graphene aerogel composites and their utilization for absorption of organic liquids CARBON Li, Z., Liu, C., Frick, J., Davey, A. K., Dods, M. N., Carraro, C., Senesky, D. G., Maboudian, R. 2023; 201: 561-567

  View details for DOI 10.1016/j.carbon.2022.09.015

  View details for Web of Science ID 000868746600002

• DATA-DRIVEN DESIGN OF HIGH ELECTRON MOBILITY TRANSISTOR DEVICES USING PHYSICS-INFORMED GAUSSIAN PROCESS MODELING Renteria, A., Xu, Y., Hamdan, B., Li, Z., Cordero, S., Senesky, D., Wang, P., AMER SOC MECHANICAL ENGINEERS AMER SOC MECHANICAL ENGINEERS. 2023

  View details for Web of Science ID 001221606700014

• SENSOR NETWORK DESIGN FOR PERMANENT MAGNET SYNCHRONOUS MOTOR FAULT DIAGNOSIS Kohtz, S., Zhao, J., Renteria, A., Lalwani, A., Zhang, X., Haran, K. S., Senesky, D., Wang, P., AMER SOC MECHANICAL ENGINEERS AMER SOC MECHANICAL ENGINEERS. 2023

  View details for Web of Science ID 001221579000050

• Hall-Effect Sensor Design With Physics-Informed Gaussian Process Modeling IEEE SENSORS JOURNAL Xu, Y., Lalwani, A., Arora, K., Zheng, Z., Renteria, A., Senesky, D. G., Wang, P. 2022; 22 (23): 22519-22528

  View details for DOI 10.1109/JSEN.2022.3216499

  View details for Web of Science ID 000893571900026

• Biological growth as an alternative approach to on and off-Earth construction FRONTIERS IN BUILT ENVIRONMENT Lipinska, M., Maurer, C., Cadogan, D., Head, J., Dade-Robertson, M., Paulino-Lima, I., Liu, C., Morrow, R., Senesky, D. G., Theodoridou, M., Rheinstadter, M. C., Zhang, M., Rothschild, L. J. 2022; 8

  View details for DOI 10.3389/fbuil.2022.965145

  View details for Web of Science ID 000863485200001

• Effects of Part Orientation, Printer Selection, and Infill Density on Mechanical Properties and Production Cost of 3D Printed Flexural MANUFACTURING LETTERS Chen, R., Baich, L., Lauer, J., Senesky, D. G., Manogharan, G. 2022; 33: 549-560

  View details for Web of Science ID 000880189100068

• Nanoindentation characterization of thin film stack structures by finite element analysis and experiments using acoustic emission testing MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING Liu, C., Nagler, O., Tremmel, F., Unterreitmeier, M., Frick, J. J., Gu, X., Senesky, D. G. 2022; 147

  View details for DOI 10.1016/j.mssp.2022.106737

  View details for Web of Science ID 000794109600002

• Effects of Part Orientation, Printer Selection, and Infill Density on Mechanical Properties and Production Cost of 3D Printed Flexural Specimens MANUFACTURING LETTERS Chen, R., Baich, L., Lauer, J., Senesky, D. G., Manogharan, G. 2022; 33: 549-560

  View details for Web of Science ID 000886542600007

• Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS Holliday, M., Heuser, T., Manchester, Z., Senesky, D. 2022; 58 (4): 3326-3336

  View details for DOI 10.1109/TAES.2022.3148974

  View details for Web of Science ID 000838710200052

• On-Orbit Implementation of Discrete Isolation Schemes for Improved Reliability of Serial Communication Buses IEEE TRANSACTIONS ON AEROSPACE AND ELECTRONIC SYSTEMS Holliday, M., Manchester, Z., Senesky, D. G. 2022; 58 (4): 2973-2982

  View details for DOI 10.1109/TAES.2022.3142713

  View details for Web of Science ID 000838710200027

• High Temperature Degradation Modes Observed in Gallium Nitride-Based Hall-Effect Sensors Magnetic field sensors JOURNAL OF ELECTRONIC PACKAGING Krone, A., Kasitz, J., Huitink, D., Alpert, H., Senesky, D. G., Shetty, S., Salamo, G. 2022; 144 (2)

  View details for DOI 10.1115/1.4053765

  View details for Web of Science ID 000789866100018

• Effect of proton irradiation temperature on persistent photoconductivity in zinc oxide metal-semiconductor-metal ultraviolet photodetectors JOURNAL OF APPLIED PHYSICS Heuser, T. A., Chapin, C. A., Holliday, M. A., Wang, Y., Senesky, D. G. 2022; 131 (15)

  View details for DOI 10.1063/5.0077210

  View details for Web of Science ID 000790988400006

• Cluster-based acoustic emission signal processing and loading rate effects study of nanoindentation on thin film stack structures MECHANICAL SYSTEMS AND SIGNAL PROCESSING Liu, C., Nagler, O., Tremmel, F., Unterreitmeier, M., Frick, J. J., Patil, R. P., Gu, X., Senesky, D. G. 2022; 165

  View details for DOI 10.1016/j.ymssp.2021.108301

  View details for Web of Science ID 000704878800002

• Hall-Effect Sensor Technique for No Induced Voltage in AC Magnetic Field Measurements Without Current Spinning IEEE SENSORS JOURNAL Lalwani, A., Yalamarthy, A., Alpert, H. S., Holliday, M., Eisner, S. R., Chapin, C. A., Senesky, D. G. 2022; 22 (2): 1245-1251

  View details for DOI 10.1109/JSEN.2021.3130527

  View details for Web of Science ID 000742717100002

• Selective aqueous ammonia sensors using electrochemical stripping and capacitive detection AIChE Journal Lalwani, A., Dong, H., Mu, L., Woo, K., Johnson, H. A., Holliday, M. A., Guo, J., Senesky, D. G., Tarpeh, W. A. 2021

  View details for DOI 10.1002/aic.17465

• Extended Exposure of Gallium Nitride Heterostructure Devices to a Simulated Venus Environment Eisner, S. R., Alpert, H. S., Chapin, C. A., Yalamarthy, A., Satterthwaite, P. F., Nasiri, A., Port, S., Ang, S., Senesky, D. G., IEEE IEEE. 2021

  View details for DOI 10.1109/AERO50100.2021.9438131

  View details for Web of Science ID 000681710100003

• Closed-form orthotropic constitutive model for aligned square array mesostructure ADDITIVE MANUFACTURING Chen, R., Kaplan, A. F., Senesky, D. G. 2020; 36

  View details for DOI 10.1016/j.addma.2020.101463

  View details for Web of Science ID 000600807800061

• Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring. Advanced science (Weinheim, Baden-Wurttemberg, Germany) Pham, T. A., Qamar, A., Dinh, T., Masud, M. K., Rais-Zadeh, M., Senesky, D. G., Yamauchi, Y., Nguyen, N. T., Phan, H. P. 2020; 7 (21): 2001294

  Abstract

  Semiconductor nanowires are widely considered as the building blocks that revolutionized many areas of nanosciences and nanotechnologies. The unique features in nanowires, including high electron transport, excellent mechanical robustness, large surface area, and capability to engineer their intrinsic properties, enable new classes of nanoelectromechanical systems (NEMS). Wide bandgap (WBG) semiconductors in the form of nanowires are a hot spot of research owing to the tremendous possibilities in NEMS, particularly for environmental monitoring and energy harvesting. This article presents a comprehensive overview of the recent progress on the growth, properties and applications of silicon carbide (SiC), group III-nitrides, and diamond nanowires as the materials of choice for NEMS. It begins with a snapshot on material developments and fabrication technologies, covering both bottom-up and top-down approaches. A discussion on the mechanical, electrical, optical, and thermal properties is provided detailing the fundamental physics of WBG nanowires along with their potential for NEMS. A series of sensing and electronic devices particularly for environmental monitoring is reviewed, which further extend the capability in industrial applications. The article concludes with the merits and shortcomings of environmental monitoring applications based on these classes of nanowires, providing a roadmap for future development in this fast-emerging research field.

  View details for DOI 10.1002/advs.202001294

  View details for PubMedID 33173726

  View details for PubMedCentralID PMC7640356

• Low Offset and Noise in High Biased GaN 2DEG Hall-Effect Plates Investigated With Infrared Microscopy JOURNAL OF MICROELECTROMECHANICAL SYSTEMS Dowling, K. M., Liu, T., Alpert, H. S., Chapin, C. A., Eisner, S. R., Yalamarthy, A., Satterthwaite, P. F., Kock, H., Ausserlechner, U., Asheghi, M., Goodson, K. E., Senesky, D. G. 2020; 29 (5): 669–76

  View details for DOI 10.1109/JMEMS.2020.3013187

  View details for Web of Science ID 000576466500008

• Self-powered monolithic accelerometer using a photonic gate NANO ENERGY Nguyen, T., Dinh, T., Phan, H., Dau, V., Nguyen, T., Joy, A., Bahreyni, B., Qamar, A., Rais-Zadeh, M., Senesky, D. G., Nguyen, N., Dao, D. 2020; 76

  View details for DOI 10.1016/j.nanoen.2020.104950

  View details for Web of Science ID 000573074100002

• Ultra-High-Q Gallium Nitride SAW Resonators for Applications With Extreme Temperature Swings JOURNAL OF MICROELECTROMECHANICAL SYSTEMS Qamar, A., Eisner, S. R., Senesky, D. G., Rais-Zadeh, M. 2020; 29 (5): 900–905

  View details for DOI 10.1109/JMEMS.2020.2999040

  View details for Web of Science ID 000576466500041

• Nanoarchitectonics for Wide Bandgap Semiconductor Nanowires: Toward the Next Generation of Nanoelectromechanical Systems for Environmental Monitoring ADVANCED SCIENCE Pham, T., Qamar, A., Dinh, T., Masud, M., Rais-Zadeh, M., Senesky, D. G., Yamauchi, Y., Nguyen, N., Phan, H. 2020

  View details for DOI 10.1002/advs.202001294

  View details for Web of Science ID 000572374800001

• Analysis of mobility-limiting mechanisms of the two-dimensional hole gas on hydrogen-terminated diamond PHYSICAL REVIEW B Peterson, R., Malakoutian, M., Xu, X., Chapin, C., Chowdhury, S., Senesky, D. G. 2020; 102 (7)

  View details for DOI 10.1103/PhysRevB.102.075303

  View details for Web of Science ID 000557726800002

• Effective In-Plane Moduli of Fused Filament Fabrication Material with Aligned Mesostructure JOM Chen, R., Senesky, D. 2020; 72 (3): 1314–23

  View details for DOI 10.1007/s11837-019-03963-1

  View details for Web of Science ID 000515408600032

• Lithography and Etching-Free Microfabrication of Silicon Carbide on Insulator Using Direct UV Laser Ablation ADVANCED ENGINEERING MATERIALS Tuan-Khoa Nguyen, Hoang-Phuong Phan, Dowling, K. M., Yalamarthy, A., Toan Dinh, Balakrishnan, V., Liu, T., Chapin, C. A., Quoc-Dung Truong, Van Thanh Dau, Goodson, K. E., Senesky, D. G., Dzung Viet Dao, Nam-Trung Nguyen 2020

  View details for DOI 10.1002/adem.201901173

  View details for Web of Science ID 000511390300001

• Extreme Temperature Modeling of AlGaN/GaN HEMTs IEEE TRANSACTIONS ON ELECTRON DEVICES Albahrani, S., Mahajan, D., Kargarrazi, S., Schwantuschke, D., Gneiting, T., Senesky, D. G., Khandelwal, S. 2020; 67 (2): 430–37

  View details for DOI 10.1109/TED.2019.2960573

  View details for Web of Science ID 000510723400003

• Monolithic mtesla-level magnetic induction by self-rolled-up membrane technology. Science advances Huang, W., Yang, Z., Kraman, M. D., Wang, Q., Ou, Z., Rojo, M. M., Yalamarthy, A. S., Chen, V., Lian, F., Ni, J. H., Liu, S., Yu, H., Sang, L., Michaels, J., Sievers, D. J., Eden, J. G., Braun, P. V., Chen, Q., Gong, S., Senesky, D. G., Pop, E., Li, X. 2020; 6 (3): eaay4508

  Abstract

  Monolithic strong magnetic induction at the mtesla to tesla level provides essential functionalities to physical, chemical, and medical systems. Current design options are constrained by existing capabilities in three-dimensional (3D) structure construction, current handling, and magnetic material integration. We report here geometric transformation of large-area and relatively thick (~100 to 250 nm) 2D nanomembranes into multiturn 3D air-core microtubes by a vapor-phase self-rolled-up membrane (S-RuM) nanotechnology, combined with postrolling integration of ferrofluid magnetic materials by capillary force. Hundreds of S-RuM power inductors on sapphire are designed and tested, with maximum operating frequency exceeding 500 MHz. An inductance of 1.24 muH at 10 kHz has been achieved for a single microtube inductor, with corresponding areal and volumetric inductance densities of 3 muH/mm2 and 23 muH/mm3, respectively. The simulated intensity of the magnetic induction reaches tens of mtesla in fabricated devices at 10 MHz.

  View details for DOI 10.1126/sciadv.aay4508

  View details for PubMedID 32010770

• Deployment of InAlN/GaN Hall-effect Sensors for Bucket Transformer Monitoring and Forecasting Janowitz, J., Holliday, M., Dowling, K., Yeung, B., Kumar, S., Peterson, R., Alpert, H., Chapin, C., Lopez, J., Senesky, D. G., IEEE IEEE. 2020

  View details for Web of Science ID 000646236300282

• Deployment of InAlN/GaN Hall-effect Sensors for Bucket Transformer Monitoring and Forecasting 2020 IEEE SENSORS Janowitz, J., Holliday, M., Dowling, K., Yeung, B., Kumar, S., Peterson, R., Alpert, H., Chapin, C., Lopez, J., Senesky, D. G. 2020: 4

  View details for DOI 10.1109/SENSORS47125.2020.9278866

• A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500 °C in Air. Sensors (Basel, Switzerland) Eisner, S. R., Chapin, C. A., Lu, R. n., Yang, Y. n., Gong, S. n., Senesky, D. G. 2020; 21 (1)

  Abstract

  This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a -3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be -95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and -95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.

  View details for DOI 10.3390/s21010149

  View details for PubMedID 33383685

• Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas. Nano letters Yalamarthy, A. S., Munoz Rojo, M., Bruefach, A., Boone, D., Dowling, K. M., Satterthwaite, P. F., Goldhaber-Gordon, D., Pop, E., Senesky, D. G. 2019

  Abstract

  In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimensional electron gas (2DEG). We find that phonon drag does not contribute significantly to the thermoelectric behavior of devices with 100 nm GaN thickness, which suppresses the phonon mean free path. However, when the thickness is increased to 1.2 mum, up to 32% (88%) of the Seebeck coefficient at 300 K (50 K) can be attributed to the drag component. In turn, the phonon drag enables state-of-the-art thermoelectric power factor in the thicker GaN film, up to 40 mW m-1 K-2 at 50 K. By measuring the thermal conductivity of these AlGaN/GaN films, we show that the magnitude of the phonon drag can increase even when the thermal conductivity decreases. Decoupling of thermal conductivity and Seebeck coefficient could enable important advancements in thermoelectric power conversion with devices based on 2DEGs.

  View details for DOI 10.1021/acs.nanolett.9b00901

  View details for PubMedID 31088057

• Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-Effect Sensors IEEE SENSORS JOURNAL Alpert, H. S., Dowling, K. M., Chapin, C. A., Yalamarthy, A., Benbrook, S. R., Koeck, H., Ausserlechner, U., Senesky, D. G. 2019; 19 (10): 3640–46

  View details for DOI 10.1109/JSEN.2019.2895546

  View details for Web of Science ID 000465288100009

• Modeling of radiation-induced defect recovery in 3C-SiC under high field bias conditions COMPUTATIONAL MATERIALS SCIENCE Peterson, R., Senesky, D. 2019; 161: 10–15

  View details for DOI 10.1016/j.commatsci.2019.01.016

  View details for Web of Science ID 000462165100002

• 500 degrees C SiC PWM Integrated Circuit IEEE TRANSACTIONS ON POWER ELECTRONICS Kargarrazi, S., Elahipanah, H., Saggini, S., Senesky, D., Zetterling, C. 2019; 34 (3): 1997–2001

  View details for DOI 10.1109/TPEL.2018.2859430

  View details for Web of Science ID 000458179200003

• Process-induced anomalous current transport in graphene/InAlN/GaN heterostructured diodes Satterthwaite, P. F., Yalamarthy, A., Vaziri, S., Rojo, M., Pop, E., Senesky, D. G., IEEE IEEE. 2019

  View details for Web of Science ID 000474762500053

• Gallium Nitride Photodetector Measurements of UV Emission from a Gaseous CH4/O-2 Hybrid Rocket Igniter Plume Alpert, H. S., Yalamarthy, A., Satterthwaite, P. F., Jens, E., Rabinovitch, J., Scandrette, N., Newaz, A. M., Karp, A. C., Senesky, D. G., IEEE IEEE. 2019

  View details for Web of Science ID 000481648201013

• Stable Operation of AlGaN/GaN HEMTs for 25 h at 400C in air IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Kargarrazi, S., Yalamarthy, A., Satterthwaite, P. F., Blankenberg, S., Chapin, C., Senesky, D. G. 2019; 7 (1): 931–35

  View details for DOI 10.1109/JEDS.2019.2937008

  View details for Web of Science ID 000495118900003

• Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE Hoang-Phuong Phan, Tuan-Khoa Nguyen, Toan Dinh, Cheng, H., Mu, F., Iacopi, A., Hold, L., Dzung Viet Dao, Suga, T., Senesky, D. G., Nam-Trung Nguyen 2018; 215 (24)

  View details for DOI 10.1002/pssa.201800288

  View details for Web of Science ID 000453917000007

• High Responsivity, Low Dark Current Ultraviolet Photodetectors Based on Two-Dimensional Electron Gas Interdigitated Transducers ACS PHOTONICS Satterthwaite, P. F., Yalamarthy, A., Scandrette, N. A., Newaz, A. M., Senesky, D. G. 2018; 5 (11): 4277–82

  View details for DOI 10.1021/acsphotonics.8b01169

  View details for Web of Science ID 000451496500013

• Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure MATERIALS & DESIGN Hoang-Phuong Phan, Dowling, K. M., Tuan Khoa Nguyen, Toan Dinh, Senesky, D. G., Namazu, T., Dzung Viet Dao, Nam-Trung Nguyen 2018; 156: 16–21

  View details for DOI 10.1016/j.matdes.2018.06.031

  View details for Web of Science ID 000441422300002

• Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures MATERIALS & DESIGN Tuan-Khoa Nguyen, Hoang-Phuong Phan, Toan Dinh, Dowling, K. M., Foisal, A., Senesky, D. G., Nam-Trung Nguyen, Dzung Viet Dao 2018; 156: 441–45

  View details for DOI 10.1016/j.matdes.2018.07.014

  View details for Web of Science ID 000441422300042

• A Single Input Multiple Output (SIMO) Variation-Tolerant Nanosensor. ACS sensors Moon, D., Kim, B., Peterson, R., Badokas, K., Seol, M., Senesky, D. G., Han, J., Meyyappan, M. 2018

  Abstract

  Successful transition to commercialization and practical implementation of nanotechnology innovations may very well need device designs that are tolerant to the inherent variations and imperfections in all nanomaterials including carbon nanotubes, graphene, and others. As an example, a single-walled carbon nanotube network based gas sensor is promising for a wide range of applications such as environment, industry, and biomedical and wearable devices due to its high sensitivity, fast response, and low power consumption. However, a long-standing issue has been the production of extremely high purity semiconducting nanotubes, thereby contributing to the delay in the market adoption of those sensors. Inclusion of even less than 0.1% of metallic nanotubes, which is inevitable, is found to result in a significant deterioration of sensor-to-sensor uniformity. Acknowledging the coexistence of metallic and semiconducting nanotubes as well as all other possible imperfections, we herein present a novel variation-tolerant sensor design where the sensor response is defined by a statistical Gaussian measure in contrast to a traditional deterministic approach. The single input and multiple output data are attained using multiport electrodes fabricated over a relatively large area single nanotube ensemble. The data processing protocol discards outlier data points and the origin of the outliers is investigated. Both the experimental demonstration and complementary analytical modeling support the hypothesis that the statistical analysis of the device can strengthen the credibility of the sensor constructed using nanomaterials with any imperfections. The proposed strategy can also be applied to physical, radiation, and biosensors as well as other electronic devices.

  View details for PubMedID 30146873

• Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures. RSC advances Phan, H. P., Dowling, K. M., Nguyen, T. K., Chapin, C. A., Dinh, T., Miller, R. A., Han, J., Iacopi, A., Senesky, D. G., Dao, D. V., Nguyen, N. T. 2018; 8 (52): 29976-29979

  Abstract

  This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cryogenic conditions. Nanothin 3C-SiC films with a carrier concentration of 2 × 1019 cm-3 were epitaxially grown on a Si substrate using the LPCVD process, followed by photolithography and UV laser engraving processes to form SiC-on-Si pressure sensors. The magnitude of the piezoresistive effect was measured by monitoring the change of the SiC conductance subjected to pressurizing/depressurizing cycles at different temperatures. Experimental results showed a relatively stable piezoresistive effect in the highly doped 3C-SiC film with the gauge factor slightly increased by 20% at 150 K with respect to that at room temperature. The data was also in good agreement with theoretical analysis obtained based on the charge transfer phenomenon. This finding demonstrates the potential of 3C-SiC for MEMS sensors used in a large range of temperatures from cryogenic to high temperatures.

  View details for DOI 10.1039/c8ra05797d

  View details for PubMedID 35547286

  View details for PubMedCentralID PMC9085268

• Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering ADVANCED FUNCTIONAL MATERIALS Yalamarthy, A., So, H., Rojo, M., Suria, A. J., Xu, X., Pop, E., Senesky, D. G. 2018; 28 (22)

  View details for DOI 10.1002/adfm.201705823

  View details for Web of Science ID 000434030800001

• Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation APPLIED PHYSICS LETTERS Miller, R. A., So, H., Chiamori, H. C., Dowling, K. M., Wang, Y., Senesky, D. G. 2017; 111 (24)

  View details for DOI 10.1063/1.5005797

  View details for Web of Science ID 000418098900015

• In situ ultraviolet shock radiance measurements using GaN-on-sapphire photodetectors REVIEW OF SCIENTIFIC INSTRUMENTS Miller, R. A., Cruden, B. A., Martinez, R., Senesky, D. G. 2017; 88 (11): 115004

  Abstract

  Gallium nitride (GaN)-on-sapphire photodetectors are used to measure the ultraviolet (UV) radiance behind a shock wave in support of atmospheric entry sensing technologies. DC spectral response characterization of the GaN-based photodetectors shows a peak response around 365 nm with an UV/visible rejection of an order of magnitude. To conduct in situ measurements of UV shock-layer radiation, the GaN-based photodetectors were installed, without protective packaging, in the test section of a shock tube. The measured UV radiation, in terms of incident optical power on the photodetectors, is in excellent agreement with average UV radiation measured by the shock tube facility spectrometers. Furthermore, the device response after being subjected to the shock wave is unaltered, suggesting that the GaN-based material platform is suitable for implementation in aerospace and other harsh environment sensing applications.

  View details for PubMedID 29195343

• Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces APPLIED SURFACE SCIENCE So, H., Lim, J., Suria, A. J., Senesky, D. G. 2017; 409: 91-96

  View details for DOI 10.1016/j.apsusc.2017.02.139

  View details for Web of Science ID 000400223900014

• Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding MICROELECTRONIC ENGINEERING Dowling, K. M., So, H., Toor, A., Chapin, C. A., Senesky, D. G. 2017; 173: 54-57

  View details for DOI 10.1016/j.mee.2017.03.012

  View details for Web of Science ID 000401387400009

• Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching JOURNAL OF MICROELECTROMECHANICAL SYSTEMS Dowling, K. M., Ransom, E. H., Senesky, D. G. 2017; 26 (1): 135-142

  View details for DOI 10.1109/JMEMS.2016.2621131

  View details for Web of Science ID 000397049500014

• Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating IEEE ELECTRON DEVICE LETTERS Hou, M., So, H., Suria, A. J., Yalamarthy, A. S., Senesky, D. G. 2017; 38 (1): 56-59

  View details for DOI 10.1109/LED.2016.2626388

  View details for Web of Science ID 000393765800014

• LOW-TEMPERATURE AND PRESSURE RESPONSE OF InAlN/GaN RING-SHAPED HIGH ELECTRON MOBILITY TRANSISTORS Chapin, C. A., Miller, R. A., Chen, R., Dowling, K. M., Senesky, D. G., IEEE IEEE. 2017: 786–89

  View details for Web of Science ID 000426701400194

• ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors APPLIED SURFACE SCIENCE So, H., Senesky, D. G. 2016; 387: 280-284

  View details for DOI 10.1016/j.apsusc.2016.06.166

  View details for Web of Science ID 000381251100034

• Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility AIP ADVANCES Xu, X., Zhong, J., So, H., Norvilas, A., Sommerhalter, C., Senesky, D. G., Tang, M. 2016; 6 (11)

  View details for DOI 10.1063/1.4967816

  View details for Web of Science ID 000392082600024

• DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 degrees C in air SEMICONDUCTOR SCIENCE AND TECHNOLOGY Suria, A. J., Yalamarthy, A. S., So, H., Senesky, D. G. 2016; 31 (11)

  View details for DOI 10.1088/0268-1242/31/11/115017

  View details for Web of Science ID 000386372800001

• A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays REVIEW OF SCIENTIFIC INSTRUMENTS Miller, R. A., So, H., Chiamori, H. C., Suria, A. J., Chapin, C. A., Senesky, D. G. 2016; 87 (9)

  Abstract

  A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

  View details for DOI 10.1063/1.4962704

  View details for Web of Science ID 000385634500061

  View details for PubMedID 27782578

• Rapid fabrication and packaging of AlGaN/GaN high-temperature ultraviolet photodetectors using direct wire bonding JOURNAL OF PHYSICS D-APPLIED PHYSICS So, H., Senesky, D. G. 2016; 49 (28)

  View details for DOI 10.1088/0022-3727/49/28/285109

  View details for Web of Science ID 000383675600010

• Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors IEEE SENSORS JOURNAL So, H., Lim, J., Senesky, D. G. 2016; 16 (10): 3633-3639

  View details for DOI 10.1109/JSEN.2016.2531181

  View details for Web of Science ID 000374239600038

• Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing APPLIED SURFACE SCIENCE So, H., Hou, M., Jain, S. R., Lim, J., Senesky, D. G. 2016; 368: 104-109

  View details for DOI 10.1016/j.apsusc.2016.01.178

  View details for Web of Science ID 000373949000015

• Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors SEMICONDUCTOR SCIENCE AND TECHNOLOGY Yalamarthy, A. S., Senesky, D. G. 2016; 31 (3)

  View details for DOI 10.1088/0268-1242/31/3/035024

  View details for Web of Science ID 000372423200028

• Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces APPLIED PHYSICS LETTERS So, H., Senesky, D. G. 2016; 108 (1)

  View details for DOI 10.1063/1.4939509

  View details for Web of Science ID 000374313000032

• 4th International Symposium on Sensor Science (I3S2015): Conference Report. Sensors Seitz, P., Senesky, D. G., Schöning, M. J., Hauser, P. C., Moser, R., Herzig, H. P., Melesse, A. M., Broderick, P. A., Eugster, P. T. 2015; 15 (9): 24458-24465

  View details for DOI 10.3390/s150924458

  View details for PubMedID 26404306

• 4H-SiC N-Channel JFET for Operation in High-Temperature Environments IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Lien, W., Damrongplasit, N., Paredes, J. H., Senesky, D. G., Liu, T. K., Pisano, A. P. 2014; 2 (6): 164-167

  View details for DOI 10.1109/JEDS.2014.2355132

  View details for Web of Science ID 000209607000006

• Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 degrees C in air APPLIED PHYSICS LETTERS Hou, M., Senesky, D. G. 2014; 105 (8)

  View details for DOI 10.1063/1.4894290

  View details for Web of Science ID 000342753500026

• Temperature sensor based on 4H-silicon carbide pn diode operational from 20 degrees C to 600 degrees C APPLIED PHYSICS LETTERS Zhang, N., Lin, C., Senesky, D. G., Pisano, A. P. 2014; 104 (7)

  View details for DOI 10.1063/1.4865372

  View details for Web of Science ID 000332038500075

• Characterization of gallium nitride microsystems within radiation and high-temperature environments Conference on Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII Chiamori, H. C., Hou, M., Chapin, C. A., Shankar, A., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

  View details for DOI 10.1117/12.2046690

  View details for Web of Science ID 000336038300005

• Emerging GaN-based HEMTs for mechanical sensing within harsh environments Conference on Sensors for Extreme Harsh Environments Koeck, H., Chapin, C. A., Ostermaier, C., Haeberlen, O., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

  View details for DOI 10.1117/12.2051568

  View details for Web of Science ID 000343119800011

• Characterization of Irradiated and Temperature-compensated Gallium Nitride Surface Acoustic Wave Resonators Conference on Sensors for Extreme Harsh Environments Shankar, A., Angadi, C., Bhattacharya, S., Lin, C., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

  View details for DOI 10.1117/12.2050838

  View details for Web of Science ID 000343119800009

• Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors Conference on Sensors for Extreme Harsh Environments Chiamori, H. C., Angadi, C., Suria, A., Shankar, A., Hou, M., Bhattacharya, S., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

  View details for DOI 10.1117/12.2050983

  View details for Web of Science ID 000343119800003

• Solar-Blind Photodetectors for Harsh Electronics SCIENTIFIC REPORTS Tsai, D., Lien, W., Lien, D., Chen, K., Tsai, M., Senesky, D. G., Yu, Y., Pisano, A. P., He, J. 2013; 3

  View details for DOI 10.1038/srep02628

  View details for Web of Science ID 000324157500003

• Advances in silicon carbide science and technology at the micro- and nanoscales JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Maboudian, R., Carraro, C., Senesky, D. G., Roper, C. S. 2013; 31 (5)

  View details for DOI 10.1116/1.4807902

  View details for Web of Science ID 000324388800006

• Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures JOURNAL OF MICROMECHANICS AND MICROENGINEERING Lin, C., Chen, Y., Felmetsger, V. V., Lien, W., Riekkinen, T., Senesky, D. G., Pisano, A. P. 2013; 23 (2)

  View details for DOI 10.1088/0960-1317/23/2/025019

  View details for Web of Science ID 000313752800019

• Characterization of Gallium Nitride Heterostructures for Strain Sensing at Elevated Temperatures 9th International Workshop on Structural Health Monitoring (IWSHM) CHAPIN, C. A., Chiamori, H. C., Hou, M., Senesky, D. G. DESTECH PUBLICATIONS, INC. 2013: 1621–1628

  View details for Web of Science ID 000329292700198

• MEMS Piezoelectric Energy Harvesters for Harsh Environment Sensing Lai, Y., J., Li, W., C., Lin, C., M., Felmetsger, V., V., Senesky, D., G., Pisano, A., P. 2013
• Robust Sensors for Structural Health Monitoring within Harsh Environments 9th International Workshop on Structural Health Monitoring (IWSHM) Senesky, D. G. DESTECH PUBLICATIONS, INC. 2013: 45–50

  View details for Web of Science ID 000329292700005

• 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 degrees C IEEE ELECTRON DEVICE LETTERS Lien, W., Tsai, D., Lien, D., Senesky, D. G., He, J., Pisano, A. P. 2012; 33 (11): 1586-1588

  View details for DOI 10.1109/LED.2012.2214759

  View details for Web of Science ID 000310387100025

• AlN/3C-SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators ADVANCED MATERIALS Lin, C., Chen, Y., Felmetsger, V. V., Senesky, D. G., Pisano, A. P. 2012; 24 (20): 2722-2727

  Abstract

  An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb wave resonator utilizing the QS(3) mode exhibits a low motional impedance of 91 Ω and a high Q of 5510 at a series resonance frequency (f(s)) of 2.92 GHz, resulting in the highest f(s)·Q product of 1.61 × 10(13) Hz among the suspended piezoelectric thin film resonators reported to date.

  View details for DOI 10.1002/adma.201104842

  View details for Web of Science ID 000304043000011

  View details for PubMedID 22495881

• Micromachined aluminum nitride acoustic resonators with an epitaxial silicon carbide layer utilizing high-order Lamb wave modes Lin, C., M., Chen, Y., Y., Felmetsger, V., V., Vigevani, G., Senesky, D., G., Pisano, A., P. 2012
• Wide Bandgap Semiconductors for Sensing within Extreme Harsh Environments Symposia on Low-Dimensional Nanoscale Elect and Photonic Devices 5 and State-of-the-Art Program on Cpd Semicond 54 (SOTAPOCS) Senesky, D. G. ELECTROCHEMICAL SOC INC. 2012: 233–38

  View details for DOI 10.1149/05006.0233ecst

  View details for Web of Science ID 000338190200034

• Epitaxial Graphene Growth on 3C-SiC(111)/AlN(0001)/Si(100) Electrochemical and Solid-State Letters Hsia, B., Ferralis, N., Senesky, D., G., Pisano, A., P., Carraro, C., Maboudian, R. 2011; 14 (2): K13-K15
• Active Materials for New Energy Efficient Window Glazing Technology: Feasibility Study Technical Report for Lawrence Berkeley National Laboratory and Department of Energy Senesky, D., G., Lee, E., Selkowitz, S. 2011
• MEMS Strain Sensors for Intelligent Structural Systems. New Developments in Sensing Technology for Structural Health Monitoring Senesky, D., G., Jamshidi, B. edited by Mukhopadhyay, S. Springer-Verlag. 2011: 63–74
• High-Q aluminum nitride Lamb wave resonators with biconvex edges Applied Physics Letters Lin, C., M., lai, Y., J., Hsu, J., C., Chen, Y., Y., Senesky, D., G., Pisano, A., P. 2011; 99: 143501
• Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection IEEE Electron Device Letters Lien, W., C., Tsai, D., S., Chiu, S., H., Senesky, D., G., Maboudian, R., Pisano, A., P. 2011; 32: 1564 - 1566
• Quality factor enhancement in Lamb wave resonators utilizing AlN plates with convex edges Lin, C., M., Lai, Y., J., Yen, T., T., Hsu, J., C., Chen, Y., Y., Senesky, D., G. 2011
• Nanocrystalline SiC Metal-Semiconductor-Metal Photodetector with ZnO Nanorod Arrays for High-Temperature Applications. Lien, W., C., Tsai, D., S., Chiu, S., H., Senesky, D., G., Maboudian, R., Pisano, A., P. 2011
• MEMS Sensors for Down-Hole Monitoring of Geothermal Energy Systems Wodin-Schwartz, S., Chan, M., W., Mansukhani, K., Pisano, A., P., Senesky, D., G. 2011
• AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices Applied Physics Letters Lin, C., M., Lien, W., C, Felmetsger, V., Hopcroft, M., A., Senesky, D., G., Pisano, A., P. 2010; 97: 141907
• Synthesis of narrowband AlN Lamb wave ladder-type filters based on overhang adjustment Yen, T., T., Lin, C., M., Hoprcoft, M., A., Kuypers, J., H., Senesky, D., G., Pisano, A., P. 2010
• Growth of Highly C-Axis Oriented AlN Films on 3C-SiC/Si Substrate Lin, C., M., Lien, W., C, Felmetsger, V., Senesky, D., G., Hopcroft, M., A., Pisano, A., P. 2010
• Characterization of Aluminum Nitride Lamb Wave Resonators Operating At 600°C For Harsh Environment RF Applications Yen, T., T., Lin, C., M., Zhao, X., Senesky, D., G., Hopcroft, M., A., Pisano, A., P. 2010
• Ohmic Contact With Enhanced Stability to Polycrystalline Silicon Carbide Via Carbon Interfacial Layer Liu, F., Hsia, B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2010
• MEMS Sensing in an In-Cylinder Combustion Environment Wodin-Schwartz, S., Hopcroft, M., A., Senesky, D., G., Pisano, A., P. 2010
• Aluminum Nitride as a Masking Material for the Plasma Etching of Silicon Carbide Structures Senesky, D., G., Pisano, A., P. 2010
• Growth of 3C-SiC/AlN/Si(100) layered structure with atomically abrupt interface via modified precursor feeding procedure Electrochemical and Solid-State Letters Lien, W., C., Cheng, K., B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2010; 13 (7): D53-D56
• Genetic Algorithm Optimization for MEMS Cantilevered Piezoelectric Energy Harvesters Lai, Y., J., Senesky, D., G., Pisano, A., P. 2010
• Surface acoustic wave propagation properties in AlN/3C-SiC/Si composite structure Lin, C., M., Chen, Y., Y., Felmetsger, V., V., Yen, T., T., Lien, W., C., Senesky, D., G. 2010
• Epitaxial Growth of 3C-SiC on AlN/Si (100) via Methyltrichlorosilane-based Chemical Vapor Deposition Lien, W., C., Cheng, K., B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2009
• Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: a Review IEEE Sensors Journal Senesky, D., G., Jamshidi, B., Cheng, K., B., Pisano, A., P. 2009; 9 (11): 1472-1478
• Electrodeposition of Permalloy in Deep Silicon Trenches without Edge-Overgrowth Utilizing Dry Film Photoresist Park, S., W., Senesky, D., G., Pisano, A., P. 2009
• A Silicon Carbide Resonant Tuning Fork for Micro-Sensing Applications in High Temperature and High G-Shock Environments Journal of Micro/Nanolithography, MEMS, and MOEMS Myers, D., R., Cheng, K., B., Jamshidi, B., Azevedo, R., G., Senesky, D., G., Chen, L. 2009; 8 (2): 21116
• High Resolution Silicon Carbide Strain Gauge at 600oC Cheng, K., B., Myers, D., R., Jamshidi, B., Azevedo, R., G., Jones (aka Senesky), D., G., Mehregany, M. 2008
• Low Temperature Ion Beam Sputter Deposition of Amorphous Silicon Carbide for Vacuum Encapsulation Jones (aka Senesky), D., G., Azevedo, R., G., Chan, M., W., Pisano, A., P., Wijesundara, M., B. J. 2007
• A SiC MEMS Resonant Strain Sensor for Harsh Environment Applications IEEE Sensors Journal Azevedo, R., G., Jones (aka Senesky), D., G., Jog, A., V., Jamshidi, B., Myers, D., R., Chen, L. 2007; 7 (4): 568-576
• Ion Beam Sputter Deposition of Silicon Carbide for Vacuum Encapsulation Jones (aka Senesky), D., G., Pisano, A., P. 2007
• Silicon Carbide Coated MEMS Strain Sensor for Harsh Environment Applications Azevedo, R., G., Zhang, J., Jones (aka Senesky), D., G., Myers, D., R., Jog, A., V., Jamshidi, B. 2007
• Fabrication of Ultra Thick Ferromagnetic Structures in Silicon Jones (aka Senesky), D., G., Pisano, A., P. 2004
• MEMS Rotary Engine Power System Fernandez-Pello, A., C., Pisano, A., P., Fu, K., Walther, D., Knobloch, A., Martinez, F. 2002