Bio


Debbie G. Senesky is an Assistant Professor at Stanford University in the Aeronautics and Astronautics Department and by courtesy, the Electrical Engineering Department. In addition, she is the Principal Investigator of the EXtreme Environment Microsystems Laboratory (XLab). Her research interests include the development of nanomaterials for extreme harsh environments, high-temperature electronics, and robust instrumentation for Venus exploration. In the past, she has held positions at GE Sensing (formerly known as NovaSensor), GE Global Research Center, and Hewlett Packard. She received the B.S. degree (2001) in mechanical engineering from the University of Southern California. She received the M.S. degree (2004) and Ph.D. degree (2007) in mechanical engineering from the University of California, Berkeley. Prof. Senesky recently chaired the 2018 Women in Aerospace Symposium (WIA2018) at Stanford University. She has served on the technical program committee of the IEEE International Electron Devices Meeting (IEEE IEDM), International Conference on Solid-State Sensors, Actuators, and Microsystems (Transducers), and International Symposium on Sensor Science (I3S). She is currently the co-editor of three technical journals: IEEE Electron Device Letters, Sensors, and Micromachines. In addition, she currently serves on the board of directors of the non-profit organization Scientific Adventures for Girls. In recognition of her research, she received the Emerging Leader Abie Award from AnitaB.org in 2018, Early Faculty Career Award from the National Aeronautics and Space Administration (NASA) in 2012, Gabilan Faculty Fellowship Award in 2012, and Sloan Ph.D. Fellowship from the Alfred P. Sloan Foundation in 2004.

Prof. Senesky's career path and research has been featured on the People Behind the Science podcast, the Future of Everything radio show, Space.com, and NPR's Tell Me More program. More information about Prof. Senesky can be found at https://xlab.stanford.edu, on Instagram (@debbiesenesky), and on Twitter (@debbiesenesky).

Academic Appointments


Honors & Awards


  • Emerging Leader Abie Award in Honor of Denice Denton, AnitaB.org (2018)
  • Selected Participant, US Frontiers of Engineering Symposium, National Academy of Engineering (2016)
  • Golden Reviewer, IEEE Electron Devices Letters (2015)
  • Early Faculty Career Award, National Aeronautics and Space Administration (NASA) (2012)
  • Frederick E. Terman Faculty Fellow, Stanford University (2012)
  • Gabilan Faculty Fellow, Stanford University (2012)
  • Sloan Ph.D. Fellowship, Alfred P. Sloan Foundation (2004-2006)

Boards, Advisory Committees, Professional Organizations


  • Faculty Advisor, Stanford Chapter, National Society of Women Engineers (SWE) (2018 - Present)
  • Editor, Micromachines (Journal) (2017 - Present)
  • Editor, IEEE Electron Devices Letters (2016 - Present)
  • Board Member, Scientific Adventures for Girls (2015 - Present)
  • Editor, Sensors (Journal) (2015 - Present)

Professional Education


  • B.S., University of Southern California, Mechanical Engineering (2001)
  • M.S., University of California, Berkeley, Mechanical Engineering (2004)
  • Ph.D., University of California, Berkeley, Mechanical Engineering (2007)

2018-19 Courses


Stanford Advisees


All Publications


  • Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure MATERIALS & DESIGN Hoang-Phuong Phan, Dowling, K. M., Tuan Khoa Nguyen, Toan Dinh, Senesky, D. G., Namazu, T., Dzung Viet Dao, Nam-Trung Nguyen 2018; 156: 16–21
  • Highly sensitive 4H-SiC pressure sensor at cryogenic and elevated temperatures MATERIALS & DESIGN Tuan-Khoa Nguyen, Hoang-Phuong Phan, Toan Dinh, Dowling, K. M., Foisal, A., Senesky, D. G., Nam-Trung Nguyen, Dzung Viet Dao 2018; 156: 441–45
  • A Single Input Multiple Output (SIMO) Variation-Tolerant Nanosensor. ACS sensors Moon, D., Kim, B., Peterson, R., Badokas, K., Seol, M., Senesky, D. G., Han, J., Meyyappan, M. 2018

    Abstract

    Successful transition to commercialization and practical implementation of nanotechnology innovations may very well need device designs that are tolerant to the inherent variations and imperfections in all nanomaterials including carbon nanotubes, graphene, and others. As an example, a single-walled carbon nanotube network based gas sensor is promising for a wide range of applications such as environment, industry, and biomedical and wearable devices due to its high sensitivity, fast response, and low power consumption. However, a long-standing issue has been the production of extremely high purity semiconducting nanotubes, thereby contributing to the delay in the market adoption of those sensors. Inclusion of even less than 0.1% of metallic nanotubes, which is inevitable, is found to result in a significant deterioration of sensor-to-sensor uniformity. Acknowledging the coexistence of metallic and semiconducting nanotubes as well as all other possible imperfections, we herein present a novel variation-tolerant sensor design where the sensor response is defined by a statistical Gaussian measure in contrast to a traditional deterministic approach. The single input and multiple output data are attained using multiport electrodes fabricated over a relatively large area single nanotube ensemble. The data processing protocol discards outlier data points and the origin of the outliers is investigated. Both the experimental demonstration and complementary analytical modeling support the hypothesis that the statistical analysis of the device can strengthen the credibility of the sensor constructed using nanomaterials with any imperfections. The proposed strategy can also be applied to physical, radiation, and biosensors as well as other electronic devices.

    View details for DOI 10.1021/acssensors.8b00510

    View details for PubMedID 30146873

  • Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering ADVANCED FUNCTIONAL MATERIALS Yalamarthy, A., So, H., Rojo, M., Suria, A. J., Xu, X., Pop, E., Senesky, D. G. 2018; 28 (22)
  • Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation APPLIED PHYSICS LETTERS Miller, R. A., So, H., Chiamori, H. C., Dowling, K. M., Wang, Y., Senesky, D. G. 2017; 111 (24)

    View details for DOI 10.1063/1.5005797

    View details for Web of Science ID 000418098900015

  • In situ ultraviolet shock radiance measurements using GaN-on-sapphire photodetectors REVIEW OF SCIENTIFIC INSTRUMENTS Miller, R. A., Cruden, B. A., Martinez, R., Senesky, D. G. 2017; 88 (11): 115004

    Abstract

    Gallium nitride (GaN)-on-sapphire photodetectors are used to measure the ultraviolet (UV) radiance behind a shock wave in support of atmospheric entry sensing technologies. DC spectral response characterization of the GaN-based photodetectors shows a peak response around 365 nm with an UV/visible rejection of an order of magnitude. To conduct in situ measurements of UV shock-layer radiation, the GaN-based photodetectors were installed, without protective packaging, in the test section of a shock tube. The measured UV radiation, in terms of incident optical power on the photodetectors, is in excellent agreement with average UV radiation measured by the shock tube facility spectrometers. Furthermore, the device response after being subjected to the shock wave is unaltered, suggesting that the GaN-based material platform is suitable for implementation in aerospace and other harsh environment sensing applications.

    View details for DOI 10.1063/1.5009583

    View details for Web of Science ID 000416780600052

    View details for PubMedID 29195343

  • Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces APPLIED SURFACE SCIENCE So, H., Lim, J., Suria, A. J., Senesky, D. G. 2017; 409: 91-96
  • Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding MICROELECTRONIC ENGINEERING Dowling, K. M., So, H., Toor, A., Chapin, C. A., Senesky, D. G. 2017; 173: 54-57
  • Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching JOURNAL OF MICROELECTROMECHANICAL SYSTEMS Dowling, K. M., Ransom, E. H., Senesky, D. G. 2017; 26 (1): 135-142
  • Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating IEEE ELECTRON DEVICE LETTERS Hou, M., So, H., Suria, A. J., Yalamarthy, A. S., Senesky, D. G. 2017; 38 (1): 56-59
  • LOW-TEMPERATURE AND PRESSURE RESPONSE OF InAlN/GaN RING-SHAPED HIGH ELECTRON MOBILITY TRANSISTORS Chapin, C. A., Miller, R. A., Chen, R., Dowling, K. M., Senesky, D. G., IEEE IEEE. 2017: 786–89
  • ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors APPLIED SURFACE SCIENCE So, H., Senesky, D. G. 2016; 387: 280-284
  • DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 degrees C in air SEMICONDUCTOR SCIENCE AND TECHNOLOGY Suria, A. J., Yalamarthy, A. S., So, H., Senesky, D. G. 2016; 31 (11)
  • Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility AIP ADVANCES Xu, X., Zhong, J., So, H., Norvilas, A., Sommerhalter, C., Senesky, D. G., Tang, M. 2016; 6 (11)

    View details for DOI 10.1063/1.4967816

    View details for Web of Science ID 000392082600024

  • A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays REVIEW OF SCIENTIFIC INSTRUMENTS Miller, R. A., So, H., Chiamori, H. C., Suria, A. J., Chapin, C. A., Senesky, D. G. 2016; 87 (9)

    Abstract

    A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

    View details for DOI 10.1063/1.4962704

    View details for Web of Science ID 000385634500061

    View details for PubMedID 27782578

  • Rapid fabrication and packaging of AlGaN/GaN high-temperature ultraviolet photodetectors using direct wire bonding JOURNAL OF PHYSICS D-APPLIED PHYSICS So, H., Senesky, D. G. 2016; 49 (28)
  • Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors IEEE SENSORS JOURNAL So, H., Lim, J., Senesky, D. G. 2016; 16 (10): 3633-3639
  • Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing APPLIED SURFACE SCIENCE So, H., Hou, M., Jain, S. R., Lim, J., Senesky, D. G. 2016; 368: 104-109
  • Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors SEMICONDUCTOR SCIENCE AND TECHNOLOGY Yalamarthy, A. S., Senesky, D. G. 2016; 31 (3)
  • Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces APPLIED PHYSICS LETTERS So, H., Senesky, D. G. 2016; 108 (1)

    View details for DOI 10.1063/1.4939509

    View details for Web of Science ID 000374313000032

  • 4th International Symposium on Sensor Science (I3S2015): Conference Report. Sensors Seitz, P., Senesky, D. G., Schöning, M. J., Hauser, P. C., Moser, R., Herzig, H. P., Melesse, A. M., Broderick, P. A., Eugster, P. T. 2015; 15 (9): 24458-24465

    View details for DOI 10.3390/s150924458

    View details for PubMedID 26404306

  • 4H-SiC N-Channel JFET for Operation in High-Temperature Environments IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Lien, W., Damrongplasit, N., Paredes, J. H., Senesky, D. G., Liu, T. K., Pisano, A. P. 2014; 2 (6): 164-167
  • Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 degrees C in air APPLIED PHYSICS LETTERS Hou, M., Senesky, D. G. 2014; 105 (8)

    View details for DOI 10.1063/1.4894290

    View details for Web of Science ID 000342753500026

  • Temperature sensor based on 4H-silicon carbide pn diode operational from 20 degrees C to 600 degrees C APPLIED PHYSICS LETTERS Zhang, N., Lin, C., Senesky, D. G., Pisano, A. P. 2014; 104 (7)

    View details for DOI 10.1063/1.4865372

    View details for Web of Science ID 000332038500075

  • Characterization of gallium nitride microsystems within radiation and high-temperature environments Conference on Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII Chiamori, H. C., Hou, M., Chapin, C. A., Shankar, A., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

    View details for DOI 10.1117/12.2046690

    View details for Web of Science ID 000336038300005

  • Characterization of Irradiated and Temperature-compensated Gallium Nitride Surface Acoustic Wave Resonators Conference on Sensors for Extreme Harsh Environments Shankar, A., Angadi, C., Bhattacharya, S., Lin, C., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

    View details for DOI 10.1117/12.2050838

    View details for Web of Science ID 000343119800009

  • Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors Conference on Sensors for Extreme Harsh Environments Chiamori, H. C., Angadi, C., Suria, A., Shankar, A., Hou, M., Bhattacharya, S., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

    View details for DOI 10.1117/12.2050983

    View details for Web of Science ID 000343119800003

  • Emerging GaN-based HEMTs for mechanical sensing within harsh environments Conference on Sensors for Extreme Harsh Environments Koeck, H., Chapin, C. A., Ostermaier, C., Haeberlen, O., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

    View details for DOI 10.1117/12.2051568

    View details for Web of Science ID 000343119800011

  • Solar-Blind Photodetectors for Harsh Electronics SCIENTIFIC REPORTS Tsai, D., Lien, W., Lien, D., Chen, K., Tsai, M., Senesky, D. G., Yu, Y., Pisano, A. P., He, J. 2013; 3

    View details for DOI 10.1038/srep02628

    View details for Web of Science ID 000324157500003

  • Advances in silicon carbide science and technology at the micro- and nanoscales JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Maboudian, R., Carraro, C., Senesky, D. G., Roper, C. S. 2013; 31 (5)

    View details for DOI 10.1116/1.4807902

    View details for Web of Science ID 000324388800006

  • Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures JOURNAL OF MICROMECHANICS AND MICROENGINEERING Lin, C., Chen, Y., Felmetsger, V. V., Lien, W., Riekkinen, T., Senesky, D. G., Pisano, A. P. 2013; 23 (2)
  • Characterization of Gallium Nitride Heterostructures for Strain Sensing at Elevated Temperatures 9th International Workshop on Structural Health Monitoring (IWSHM) CHAPIN, C. A., Chiamori, H. C., Hou, M., Senesky, D. G. DESTECH PUBLICATIONS, INC. 2013: 1621–1628
  • MEMS Piezoelectric Energy Harvesters for Harsh Environment Sensing Lai, Y., J., Li, W., C., Lin, C., M., Felmetsger, V., V., Senesky, D., G., Pisano, A., P. 2013
  • Robust Sensors for Structural Health Monitoring within Harsh Environments 9th International Workshop on Structural Health Monitoring (IWSHM) Senesky, D. G. DESTECH PUBLICATIONS, INC. 2013: 45–50
  • 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 degrees C IEEE ELECTRON DEVICE LETTERS Lien, W., Tsai, D., Lien, D., Senesky, D. G., He, J., Pisano, A. P. 2012; 33 (11): 1586-1588
  • AlN/3C-SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators ADVANCED MATERIALS Lin, C., Chen, Y., Felmetsger, V. V., Senesky, D. G., Pisano, A. P. 2012; 24 (20): 2722-2727

    Abstract

    An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb wave resonator utilizing the QS(3) mode exhibits a low motional impedance of 91 Ω and a high Q of 5510 at a series resonance frequency (f(s)) of 2.92 GHz, resulting in the highest f(s)·Q product of 1.61 × 10(13) Hz among the suspended piezoelectric thin film resonators reported to date.

    View details for DOI 10.1002/adma.201104842

    View details for Web of Science ID 000304043000011

    View details for PubMedID 22495881

  • Wide Bandgap Semiconductors for Sensing within Extreme Harsh Environments Symposia on Low-Dimensional Nanoscale Elect and Photonic Devices 5 and State-of-the-Art Program on Cpd Semicond 54 (SOTAPOCS) Senesky, D. G. ELECTROCHEMICAL SOC INC. 2012: 233–38
  • Micromachined aluminum nitride acoustic resonators with an epitaxial silicon carbide layer utilizing high-order Lamb wave modes Lin, C., M., Chen, Y., Y., Felmetsger, V., V., Vigevani, G., Senesky, D., G., Pisano, A., P. 2012
  • Epitaxial Graphene Growth on 3C-SiC(111)/AlN(0001)/Si(100) Electrochemical and Solid-State Letters Hsia, B., Ferralis, N., Senesky, D., G., Pisano, A., P., Carraro, C., Maboudian, R. 2011; 14 (2): K13-K15
  • MEMS Sensors for Down-Hole Monitoring of Geothermal Energy Systems Wodin-Schwartz, S., Chan, M., W., Mansukhani, K., Pisano, A., P., Senesky, D., G. 2011
  • Active Materials for New Energy Efficient Window Glazing Technology: Feasibility Study Technical Report for Lawrence Berkeley National Laboratory and Department of Energy Senesky, D., G., Lee, E., Selkowitz, S. 2011
  • MEMS Strain Sensors for Intelligent Structural Systems. New Developments in Sensing Technology for Structural Health Monitoring Senesky, D., G., Jamshidi, B. edited by Mukhopadhyay, S. Springer-Verlag. 2011: 63–74
  • High-Q aluminum nitride Lamb wave resonators with biconvex edges Applied Physics Letters Lin, C., M., lai, Y., J., Hsu, J., C., Chen, Y., Y., Senesky, D., G., Pisano, A., P. 2011; 99: 143501
  • Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection IEEE Electron Device Letters Lien, W., C., Tsai, D., S., Chiu, S., H., Senesky, D., G., Maboudian, R., Pisano, A., P. 2011; 32: 1564 - 1566
  • Quality factor enhancement in Lamb wave resonators utilizing AlN plates with convex edges Lin, C., M., Lai, Y., J., Yen, T., T., Hsu, J., C., Chen, Y., Y., Senesky, D., G. 2011
  • Nanocrystalline SiC Metal-Semiconductor-Metal Photodetector with ZnO Nanorod Arrays for High-Temperature Applications. Lien, W., C., Tsai, D., S., Chiu, S., H., Senesky, D., G., Maboudian, R., Pisano, A., P. 2011
  • AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices Applied Physics Letters Lin, C., M., Lien, W., C, Felmetsger, V., Hopcroft, M., A., Senesky, D., G., Pisano, A., P. 2010; 97: 141907
  • Aluminum Nitride as a Masking Material for the Plasma Etching of Silicon Carbide Structures Senesky, D., G., Pisano, A., P. 2010
  • Synthesis of narrowband AlN Lamb wave ladder-type filters based on overhang adjustment Yen, T., T., Lin, C., M., Hoprcoft, M., A., Kuypers, J., H., Senesky, D., G., Pisano, A., P. 2010
  • Growth of Highly C-Axis Oriented AlN Films on 3C-SiC/Si Substrate Lin, C., M., Lien, W., C, Felmetsger, V., Senesky, D., G., Hopcroft, M., A., Pisano, A., P. 2010
  • Characterization of Aluminum Nitride Lamb Wave Resonators Operating At 600°C For Harsh Environment RF Applications Yen, T., T., Lin, C., M., Zhao, X., Senesky, D., G., Hopcroft, M., A., Pisano, A., P. 2010
  • Ohmic Contact With Enhanced Stability to Polycrystalline Silicon Carbide Via Carbon Interfacial Layer Liu, F., Hsia, B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2010
  • MEMS Sensing in an In-Cylinder Combustion Environment Wodin-Schwartz, S., Hopcroft, M., A., Senesky, D., G., Pisano, A., P. 2010
  • Growth of 3C-SiC/AlN/Si(100) layered structure with atomically abrupt interface via modified precursor feeding procedure Electrochemical and Solid-State Letters Lien, W., C., Cheng, K., B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2010; 13 (7): D53-D56
  • Genetic Algorithm Optimization for MEMS Cantilevered Piezoelectric Energy Harvesters Lai, Y., J., Senesky, D., G., Pisano, A., P. 2010
  • Surface acoustic wave propagation properties in AlN/3C-SiC/Si composite structure Lin, C., M., Chen, Y., Y., Felmetsger, V., V., Yen, T., T., Lien, W., C., Senesky, D., G. 2010
  • Epitaxial Growth of 3C-SiC on AlN/Si (100) via Methyltrichlorosilane-based Chemical Vapor Deposition Lien, W., C., Cheng, K., B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2009
  • A Silicon Carbide Resonant Tuning Fork for Micro-Sensing Applications in High Temperature and High G-Shock Environments Journal of Micro/Nanolithography, MEMS, and MOEMS Myers, D., R., Cheng, K., B., Jamshidi, B., Azevedo, R., G., Senesky, D., G., Chen, L. 2009; 8 (2): 21116
  • Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: a Review IEEE Sensors Journal Senesky, D., G., Jamshidi, B., Cheng, K., B., Pisano, A., P. 2009; 9 (11): 1472-1478
  • Electrodeposition of Permalloy in Deep Silicon Trenches without Edge-Overgrowth Utilizing Dry Film Photoresist Park, S., W., Senesky, D., G., Pisano, A., P. 2009
  • High Resolution Silicon Carbide Strain Gauge at 600oC Cheng, K., B., Myers, D., R., Jamshidi, B., Azevedo, R., G., Jones (aka Senesky), D., G., Mehregany, M. 2008
  • Silicon Carbide Coated MEMS Strain Sensor for Harsh Environment Applications Azevedo, R., G., Zhang, J., Jones (aka Senesky), D., G., Myers, D., R., Jog, A., V., Jamshidi, B. 2007
  • Ion Beam Sputter Deposition of Silicon Carbide for Vacuum Encapsulation Jones (aka Senesky), D., G., Pisano, A., P. 2007
  • Low Temperature Ion Beam Sputter Deposition of Amorphous Silicon Carbide for Vacuum Encapsulation Jones (aka Senesky), D., G., Azevedo, R., G., Chan, M., W., Pisano, A., P., Wijesundara, M., B. J. 2007
  • A SiC MEMS Resonant Strain Sensor for Harsh Environment Applications IEEE Sensors Journal Azevedo, R., G., Jones (aka Senesky), D., G., Jog, A., V., Jamshidi, B., Myers, D., R., Chen, L. 2007; 7 (4): 568-576
  • Fabrication of Ultra Thick Ferromagnetic Structures in Silicon Jones (aka Senesky), D., G., Pisano, A., P. 2004
  • MEMS Rotary Engine Power System Fernandez-Pello, A., C., Pisano, A., P., Fu, K., Walther, D., Knobloch, A., Martinez, F. 2002