Bio


Debbie G. Senesky is an Assistant Professor at Stanford University in the Aeronautics and Astronautics Department and by courtesy, the Electrical Engineering Department. In addition, she is the Principal Investigator of the EXtreme Environment Microsystems Laboratory (XLab). Her research interests include the development of micro- and nano-scale sensors, high-temperature electronics, and robust interface materials for operation within extreme harsh environments. In the past, she has held positions at GE Sensing (formerly known as NovaSensor), GE Global Research Center, and Hewlett Packard. She received the B.S. degree (2001) in mechanical engineering from the University of Southern California. She received the M.S. degree (2004) and Ph.D. degree (2007) in mechanical engineering from the University of California, Berkeley. She has served on the program committee of the IEEE International Electron Devices Meeting (IEDM), International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), and International Symposium on Sensor Science (I3S). She is currently co-editor for IEEE Electron Device Letters, Sensors (journal), and Micromachines (journal). She is a recipient of the NASA Early Faculty Career Award and Alfred P. Sloan Foundation Fellowship Award. More information about Prof. Senesky can be found at https://xlab.stanford.edu or on Instagram: @debbiesenesky.

Academic Appointments


Honors & Awards


  • Selected Participant, US Frontiers of Engineering Symposium, National Academy of Engineering (2016)
  • Golden Reviewer, IEEE Electron Devices Letters (2015)
  • Early Faculty Career Award, NASA (2012)
  • Frederick E. Terman Faculty Fellow, Stanford University (2012)
  • Gabilan Faculty Fellow, Stanford University (2012)
  • Alfred P. Sloan Foundation Ph.D. Fellowship, Sloan Foundation (2004-2006)

Boards, Advisory Committees, Professional Organizations


  • Editor, Micromachines (Journal) (2017 - Present)
  • Editor, IEEE Electron Devices Letters (2016 - Present)
  • Editor, Sensors (Journal) (2015 - Present)

Professional Education


  • B.S., University of Southern California, Mechanical Engineering (2001)
  • M.S., University of California, Berkeley, Mechanical Engineering (2004)
  • Ph.D., University of California, Berkeley, Mechanical Engineering (2007)

2017-18 Courses


Stanford Advisees


All Publications


  • Highly antireflective AlGaN/GaN ultraviolet photodetectors using ZnO nanorod arrays on inverted pyramidal surfaces APPLIED SURFACE SCIENCE So, H., Lim, J., Suria, A. J., Senesky, D. G. 2017; 409: 91-96
  • Lithography-free microfabrication of AlGaN/GaN 2DEG strain sensors using laser ablation and direct wire bonding MICROELECTRONIC ENGINEERING Dowling, K. M., So, H., Toor, A., Chapin, C. A., Senesky, D. G. 2017; 173: 54-57
  • Profile Evolution of High Aspect Ratio Silicon Carbide Trenches by Inductive Coupled Plasma Etching JOURNAL OF MICROELECTROMECHANICAL SYSTEMS Dowling, K. M., Ransom, E. H., Senesky, D. G. 2017; 26 (1): 135-142
  • Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating IEEE ELECTRON DEVICE LETTERS Hou, M., So, H., Suria, A. J., Yalamarthy, A. S., Senesky, D. G. 2017; 38 (1): 56-59
  • ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors APPLIED SURFACE SCIENCE So, H., Senesky, D. G. 2016; 387: 280-284
  • Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility AIP ADVANCES Xu, X., Zhong, J., So, H., Norvilas, A., Sommerhalter, C., Senesky, D. G., Tang, M. 2016; 6 (11)

    View details for DOI 10.1063/1.4967816

    View details for Web of Science ID 000392082600024

  • DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600 degrees C in air SEMICONDUCTOR SCIENCE AND TECHNOLOGY Suria, A. J., Yalamarthy, A. S., So, H., Senesky, D. G. 2016; 31 (11)
  • A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays REVIEW OF SCIENTIFIC INSTRUMENTS Miller, R. A., So, H., Chiamori, H. C., Suria, A. J., Chapin, C. A., Senesky, D. G. 2016; 87 (9)

    Abstract

    A miniature sensor for detecting the orientation of incident ultraviolet light was microfabricated using gallium nitride (GaN)-on-sapphire substrates and semi-transparent interdigitated gold electrodes for sun sensing applications. The individual metal-semiconductor-metal photodetector elements were shown to have a stable and repeatable response with a high sensitivity (photocurrent-to-dark current ratio (PDCR) = 2.4 at -1 V bias) and a high responsivity (3200 A/W at -1 V bias) under ultraviolet (365 nm) illumination. The 3 × 3 GaN-on-sapphire ultraviolet photodetector array was integrated with a gold aperture to realize a miniature sun sensor (1.35 mm × 1.35 mm) capable of determining incident light angles with a ±45° field of view. Using a simple comparative figure of merit algorithm, measurement of incident light angles of 0° and 45° was quantitatively and qualitatively (visually) demonstrated by the sun sensor, supporting the use of GaN-based sun sensors for orientation, navigation, and tracking of the sun within the harsh environment of space.

    View details for DOI 10.1063/1.4962704

    View details for Web of Science ID 000385634500061

    View details for PubMedID 27782578

  • Rapid fabrication and packaging of AlGaN/GaN high-temperature ultraviolet photodetectors using direct wire bonding JOURNAL OF PHYSICS D-APPLIED PHYSICS So, H., Senesky, D. G. 2016; 49 (28)
  • Continuous V-Grooved AlGaN/GaN Surfaces for High-Temperature Ultraviolet Photodetectors IEEE SENSORS JOURNAL So, H., Lim, J., Senesky, D. G. 2016; 16 (10): 3633-3639
  • Interdigitated Pt-GaN Schottky interfaces for high-temperature soot-particulate sensing APPLIED SURFACE SCIENCE So, H., Hou, M., Jain, S. R., Lim, J., Senesky, D. G. 2016; 368: 104-109
  • Strain- and temperature-induced effects in AlGaN/GaN high electron mobility transistors SEMICONDUCTOR SCIENCE AND TECHNOLOGY Yalamarthy, A. S., Senesky, D. G. 2016; 31 (3)
  • Low-resistance gateless high electron mobility transistors using three-dimensional inverted pyramidal AlGaN/GaN surfaces APPLIED PHYSICS LETTERS So, H., Senesky, D. G. 2016; 108 (1)

    View details for DOI 10.1063/1.4939509

    View details for Web of Science ID 000374313000032

  • 4th International Symposium on Sensor Science (I3S2015): Conference Report. Sensors Seitz, P., Senesky, D. G., Schöning, M. J., Hauser, P. C., Moser, R., Herzig, H. P., Melesse, A. M., Broderick, P. A., Eugster, P. T. 2015; 15 (9): 24458-24465

    View details for DOI 10.3390/s150924458

    View details for PubMedID 26404306

  • 4H-SiC N-Channel JFET for Operation in High-Temperature Environments IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Lien, W., Damrongplasit, N., Paredes, J. H., Senesky, D. G., Liu, T. K., Pisano, A. P. 2014; 2 (6): 164-167
  • Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 degrees C in air APPLIED PHYSICS LETTERS Hou, M., Senesky, D. G. 2014; 105 (8)

    View details for DOI 10.1063/1.4894290

    View details for Web of Science ID 000342753500026

  • Temperature sensor based on 4H-silicon carbide pn diode operational from 20 degrees C to 600 degrees C APPLIED PHYSICS LETTERS Zhang, N., Lin, C., Senesky, D. G., Pisano, A. P. 2014; 104 (7)

    View details for DOI 10.1063/1.4865372

    View details for Web of Science ID 000332038500075

  • Characterization of gallium nitride microsystems within radiation and high-temperature environments Conference on Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII Chiamori, H. C., Hou, M., Chapin, C. A., Shankar, A., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

    View details for DOI 10.1117/12.2046690

    View details for Web of Science ID 000336038300005

  • Emerging GaN-based HEMTs for mechanical sensing within harsh environments Conference on Sensors for Extreme Harsh Environments Koeck, H., Chapin, C. A., Ostermaier, C., Haeberlen, O., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

    View details for DOI 10.1117/12.2051568

    View details for Web of Science ID 000343119800011

  • Characterization of Irradiated and Temperature-compensated Gallium Nitride Surface Acoustic Wave Resonators Conference on Sensors for Extreme Harsh Environments Shankar, A., Angadi, C., Bhattacharya, S., Lin, C., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

    View details for DOI 10.1117/12.2050838

    View details for Web of Science ID 000343119800009

  • Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors Conference on Sensors for Extreme Harsh Environments Chiamori, H. C., Angadi, C., Suria, A., Shankar, A., Hou, M., Bhattacharya, S., Senesky, D. G. SPIE-INT SOC OPTICAL ENGINEERING. 2014

    View details for DOI 10.1117/12.2050983

    View details for Web of Science ID 000343119800003

  • Solar-Blind Photodetectors for Harsh Electronics SCIENTIFIC REPORTS Tsai, D., Lien, W., Lien, D., Chen, K., Tsai, M., Senesky, D. G., Yu, Y., Pisano, A. P., He, J. 2013; 3

    View details for DOI 10.1038/srep02628

    View details for Web of Science ID 000324157500003

  • Advances in silicon carbide science and technology at the micro- and nanoscales JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Maboudian, R., Carraro, C., Senesky, D. G., Roper, C. S. 2013; 31 (5)

    View details for DOI 10.1116/1.4807902

    View details for Web of Science ID 000324388800006

  • Surface acoustic wave devices on AlN/3C-SiC/Si multilayer structures JOURNAL OF MICROMECHANICS AND MICROENGINEERING Lin, C., Chen, Y., Felmetsger, V. V., Lien, W., Riekkinen, T., Senesky, D. G., Pisano, A. P. 2013; 23 (2)
  • Characterization of Gallium Nitride Heterostructures for Strain Sensing at Elevated Temperatures 9th International Workshop on Structural Health Monitoring (IWSHM) CHAPIN, C. A., Chiamori, H. C., Hou, M., Senesky, D. G. DESTECH PUBLICATIONS, INC. 2013: 1621–1628
  • MEMS Piezoelectric Energy Harvesters for Harsh Environment Sensing Lai, Y., J., Li, W., C., Lin, C., M., Felmetsger, V., V., Senesky, D., G., Pisano, A., P. 2013
  • Robust Sensors for Structural Health Monitoring within Harsh Environments 9th International Workshop on Structural Health Monitoring (IWSHM) Senesky, D. G. DESTECH PUBLICATIONS, INC. 2013: 45–50
  • 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetectors in Operation of 450 degrees C IEEE ELECTRON DEVICE LETTERS Lien, W., Tsai, D., Lien, D., Senesky, D. G., He, J., Pisano, A. P. 2012; 33 (11): 1586-1588
  • AlN/3C-SiC Composite Plate Enabling High-Frequency and High-Q Micromechanical Resonators ADVANCED MATERIALS Lin, C., Chen, Y., Felmetsger, V. V., Senesky, D. G., Pisano, A. P. 2012; 24 (20): 2722-2727

    Abstract

    An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb wave resonator utilizing the QS(3) mode exhibits a low motional impedance of 91 Ω and a high Q of 5510 at a series resonance frequency (f(s)) of 2.92 GHz, resulting in the highest f(s)·Q product of 1.61 × 10(13) Hz among the suspended piezoelectric thin film resonators reported to date.

    View details for DOI 10.1002/adma.201104842

    View details for Web of Science ID 000304043000011

    View details for PubMedID 22495881

  • Micromachined aluminum nitride acoustic resonators with an epitaxial silicon carbide layer utilizing high-order Lamb wave modes Lin, C., M., Chen, Y., Y., Felmetsger, V., V., Vigevani, G., Senesky, D., G., Pisano, A., P. 2012
  • Wide Bandgap Semiconductors for Sensing within Extreme Harsh Environments Symposia on Low-Dimensional Nanoscale Elect and Photonic Devices 5 and State-of-the-Art Program on Cpd Semicond 54 (SOTAPOCS) Senesky, D. G. ELECTROCHEMICAL SOC INC. 2012: 233–38
  • MEMS Sensors for Down-Hole Monitoring of Geothermal Energy Systems Wodin-Schwartz, S., Chan, M., W., Mansukhani, K., Pisano, A., P., Senesky, D., G. 2011
  • Active Materials for New Energy Efficient Window Glazing Technology: Feasibility Study Technical Report for Lawrence Berkeley National Laboratory and Department of Energy Senesky, D., G., Lee, E., Selkowitz, S. 2011
  • Epitaxial Graphene Growth on 3C-SiC(111)/AlN(0001)/Si(100) Electrochemical and Solid-State Letters Hsia, B., Ferralis, N., Senesky, D., G., Pisano, A., P., Carraro, C., Maboudian, R. 2011; 14 (2): K13-K15
  • MEMS Strain Sensors for Intelligent Structural Systems. New Developments in Sensing Technology for Structural Health Monitoring Senesky, D., G., Jamshidi, B. edited by Mukhopadhyay, S. Springer-Verlag. 2011: 63–74
  • High-Q aluminum nitride Lamb wave resonators with biconvex edges Applied Physics Letters Lin, C., M., lai, Y., J., Hsu, J., C., Chen, Y., Y., Senesky, D., G., Pisano, A., P. 2011; 99: 143501
  • Low-Temperature, Ion Beam-Assisted SiC Thin Films With Antireflective ZnO Nanorod Arrays for High-Temperature Photodetection IEEE Electron Device Letters Lien, W., C., Tsai, D., S., Chiu, S., H., Senesky, D., G., Maboudian, R., Pisano, A., P. 2011; 32: 1564 - 1566
  • Quality factor enhancement in Lamb wave resonators utilizing AlN plates with convex edges Lin, C., M., Lai, Y., J., Yen, T., T., Hsu, J., C., Chen, Y., Y., Senesky, D., G. 2011
  • Nanocrystalline SiC Metal-Semiconductor-Metal Photodetector with ZnO Nanorod Arrays for High-Temperature Applications. Lien, W., C., Tsai, D., S., Chiu, S., H., Senesky, D., G., Maboudian, R., Pisano, A., P. 2011
  • Aluminum Nitride as a Masking Material for the Plasma Etching of Silicon Carbide Structures Senesky, D., G., Pisano, A., P. 2010
  • Growth of Highly C-Axis Oriented AlN Films on 3C-SiC/Si Substrate Lin, C., M., Lien, W., C, Felmetsger, V., Senesky, D., G., Hopcroft, M., A., Pisano, A., P. 2010
  • Surface acoustic wave propagation properties in AlN/3C-SiC/Si composite structure Lin, C., M., Chen, Y., Y., Felmetsger, V., V., Yen, T., T., Lien, W., C., Senesky, D., G. 2010
  • Genetic Algorithm Optimization for MEMS Cantilevered Piezoelectric Energy Harvesters Lai, Y., J., Senesky, D., G., Pisano, A., P. 2010
  • Growth of 3C-SiC/AlN/Si(100) layered structure with atomically abrupt interface via modified precursor feeding procedure Electrochemical and Solid-State Letters Lien, W., C., Cheng, K., B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2010; 13 (7): D53-D56
  • AlN thin films grown on epitaxial 3C–SiC (100) for piezoelectric resonant devices Applied Physics Letters Lin, C., M., Lien, W., C, Felmetsger, V., Hopcroft, M., A., Senesky, D., G., Pisano, A., P. 2010; 97: 141907
  • Synthesis of narrowband AlN Lamb wave ladder-type filters based on overhang adjustment Yen, T., T., Lin, C., M., Hoprcoft, M., A., Kuypers, J., H., Senesky, D., G., Pisano, A., P. 2010
  • Characterization of Aluminum Nitride Lamb Wave Resonators Operating At 600°C For Harsh Environment RF Applications Yen, T., T., Lin, C., M., Zhao, X., Senesky, D., G., Hopcroft, M., A., Pisano, A., P. 2010
  • Ohmic Contact With Enhanced Stability to Polycrystalline Silicon Carbide Via Carbon Interfacial Layer Liu, F., Hsia, B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2010
  • MEMS Sensing in an In-Cylinder Combustion Environment Wodin-Schwartz, S., Hopcroft, M., A., Senesky, D., G., Pisano, A., P. 2010
  • A Silicon Carbide Resonant Tuning Fork for Micro-Sensing Applications in High Temperature and High G-Shock Environments Journal of Micro/Nanolithography, MEMS, and MOEMS Myers, D., R., Cheng, K., B., Jamshidi, B., Azevedo, R., G., Senesky, D., G., Chen, L. 2009; 8 (2): 21116
  • Epitaxial Growth of 3C-SiC on AlN/Si (100) via Methyltrichlorosilane-based Chemical Vapor Deposition Lien, W., C., Cheng, K., B., Senesky, D., G., Carraro, C., Pisano, A., P., Maboudian, R. 2009
  • Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: a Review IEEE Sensors Journal Senesky, D., G., Jamshidi, B., Cheng, K., B., Pisano, A., P. 2009; 9 (11): 1472-1478
  • Electrodeposition of Permalloy in Deep Silicon Trenches without Edge-Overgrowth Utilizing Dry Film Photoresist Park, S., W., Senesky, D., G., Pisano, A., P. 2009
  • High Resolution Silicon Carbide Strain Gauge at 600oC Cheng, K., B., Myers, D., R., Jamshidi, B., Azevedo, R., G., Jones (aka Senesky), D., G., Mehregany, M. 2008
  • Low Temperature Ion Beam Sputter Deposition of Amorphous Silicon Carbide for Vacuum Encapsulation Jones (aka Senesky), D., G., Azevedo, R., G., Chan, M., W., Pisano, A., P., Wijesundara, M., B. J. 2007
  • Ion Beam Sputter Deposition of Silicon Carbide for Vacuum Encapsulation Jones (aka Senesky), D., G., Pisano, A., P. 2007
  • A SiC MEMS Resonant Strain Sensor for Harsh Environment Applications IEEE Sensors Journal Azevedo, R., G., Jones (aka Senesky), D., G., Jog, A., V., Jamshidi, B., Myers, D., R., Chen, L. 2007; 7 (4): 568-576
  • Silicon Carbide Coated MEMS Strain Sensor for Harsh Environment Applications Azevedo, R., G., Zhang, J., Jones (aka Senesky), D., G., Myers, D., R., Jog, A., V., Jamshidi, B. 2007
  • Fabrication of Ultra Thick Ferromagnetic Structures in Silicon Jones (aka Senesky), D., G., Pisano, A., P. 2004
  • MEMS Rotary Engine Power System Fernandez-Pello, A., C., Pisano, A., P., Fu, K., Walther, D., Knobloch, A., Martinez, F. 2002