All Publications


  • Lossless Phonon Transition Through GaN-Diamond and Si-Diamond Interfaces ADVANCED ELECTRONIC MATERIALS Malakoutian, M., Woo, K., Rich, D., Mandia, R., Zheng, X., Kasperovich, A., Saraswat, D., Soman, R., Jo, Y., Pfeifer, T., Hwang, T., Aller, H., Kim, J., Lyu, J., Mabrey, J., Rodriguez, T., Pomeroy, J., Hopkins, P. E., Graham, S., Smith, D. J., Mitra, S., Cho, K., Kuball, M., Chowdhury, S. 2024
  • EMBER: Efficient Multiple-Bits-Per-Cell Embedded RRAM Macro for High-Density Digital Storage IEEE JOURNAL OF SOLID-STATE CIRCUITS Levy, A., Upton, L. R., Scott, M. D., Rich, D., Khwa, W., Chih, Y., Chang, M., Mitra, S., Murmann, B., Raina, P. 2024
  • Efficient Ultra-Dense 3D IC Power Delivery and Cooling Using 3D Thermal Scaffolding Rich, D., Srimani, T., Malakoutian, M., Chowdhury, S., Mitra, S., ACM ASSOC COMPUTING MACHINERY. 2024
  • Cooling future system-on-chips with diamond inter-tiers CELL REPORTS PHYSICAL SCIENCE Malakoutian, M., Kasperovich, A., Rich, D., Woo, K., Perez, C., Soman, R., Saraswat, D., Kim, J., Noshin, M., Chen, M., Vaziri, S., Bao, X., Shih, C., Woon, W., Asheghi, M., Goodson, K. E., Liao, S., Mitra, S., Chowdhury, S. 2023; 4 (12)
  • Testbench on a Chip: A Yield Test Vehicle for Resistive Memory Devices Upton, L. R., Lallement, G., Scott, M. D., Taylor, J., Radway, R. M., Rich, D., Nelson, M., Mitra, S., Murmann, B., IEEE IEEE. 2023: 576-582
  • Ultra-Dense 3D Physical Design Unlocks New Architectural Design Points with Large Benefits Srimani, T., Radway, R. M., Kim, J., Prabhu, K., Rich, D., Gilardi, C., Raina, P., Shulaker, M., Lim, S., Mitra, S., IEEE IEEE. 2023
  • EMBER: A 100 MHz, 0.86 mm<SUP>2</SUP>, Multiple-Bits-per-Cell RRAM Macro in 40 nm CMOS with Compact Peripherals and 1.0 pJ/bit Read Circuitry Upton, L. R., Levy, A., Scott, M. D., Rich, D., Khwa, W., Chih, Y., Chang, M., Mitra, S., Raina, P., Murmann, B., IEEE IEEE. 2023: 469-472