Honors & Awards


  • Stanford Graduate Fellowship - STMicroelectronics Fellow, Stanford University (2018-2021)
  • Kwanjeong Educational Foundation Overseas Scholarship, Kwanjeong Educational Foundation (2018-2022)
  • Timothy B. Campbell Innovation Award in Electrical Engineering and Computer Sciences, University of California, Berkeley (2018)
  • Haas Scholars Fellowship, University of California, Berkeley (2017-2018)
  • James H. Eaton Memorial Scholarship in Electrical Engineering and Computer Sciences, University of California, Berkeley (2017)

Education & Certifications


  • Bachelor of Science, University of California, Berkeley, Electrical Engineering and Computer Sciences (2018)

All Publications


  • Large-area and bright pulsed electroluminescence in monolayer semiconductors NATURE COMMUNICATIONS Lien, D., Amani, M., Desai, S. B., Ahn, G., Han, K., He, J., Ager, J. W., Wu, M. C., Javey, A. 2018; 9: 1229

    Abstract

    Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS2, WS2, MoSe2, and WSe2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

    View details for DOI 10.1038/s41467-018-03218-8

    View details for Web of Science ID 000428237700008

    View details for PubMedID 29581419

    View details for PubMedCentralID PMC5955902

  • Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature NATURE PHOTONICS Bullock, J., Amani, M., Cho, J., Chen, Y., Ahn, G., Adinolfi, V., Shrestha, V. R., Gao, Y., Crozier, K. B., Chueh, Y., Javey, A. 2018; 12 (601–607)
  • Strain-engineered growth of two-dimensional materials NATURE COMMUNICATIONS Ahn, G., Amani, M., Rasool, H., Lien, D., Mastandrea, J. P., Ager, J. W., Dubey, M., Chrzan, D. C., Minor, A. M., Javey, A. 2017; 8: 608

    Abstract

    The application of strain to semiconductors allows for controlled modification of their band structure. This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. For two-dimensional (2D) semiconductors, this is not feasible as they typically do not interact epitaxially with the substrate. Here, we demonstrate controlled strain engineering of 2D semiconductors during synthesis by utilizing the thermal coefficient of expansion mismatch between the substrate and semiconductor. Using WSe2 as a model system, we demonstrate stable built-in strains ranging from 1% tensile to 0.2% compressive on substrates with different thermal coefficient of expansion. Consequently, we observe a dramatic modulation of the band structure, manifested by a strain-driven indirect-to-direct bandgap transition and brightening of the dark exciton in bilayer and monolayer WSe2, respectively. The growth method developed here should enable flexibility in design of more sophisticated devices based on 2D materials.Strain engineering is an essential tool for modifying local electronic properties in silicon-based electronics. Here, Ahn et al. demonstrate control of biaxial strain in two-dimensional materials based on the growth substrate, enabling more complex low-dimensional electronics.

    View details for DOI 10.1038/s41467-017-00516-5

    View details for Web of Science ID 000411315800001

    View details for PubMedID 28931806

    View details for PubMedCentralID PMC5606995

  • MoS2 transistors with 1-nanometer gate lengths SCIENCE Desai, S. B., Madhvapathy, S. R., Sachid, A. B., Llinas, J. P., Wang, Q., Ahn, G. H., Pitner, G., Kim, M. J., Bokor, J., Hu, C., Wong, H. P., Javey, A. 2016; 354 (6308): 99-102

    Abstract

    Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~10(6) Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.

    View details for DOI 10.1126/science.aah4698

    View details for Web of Science ID 000387777900038

    View details for PubMedID 27846499