Stanford Advisors


All Publications


  • An electronic microemulsion phase emerging from a quantum crystal-to-liquid transition NATURE PHYSICS Sung, J., Wang, J., Esterlis, I., Volkov, P. A., Scuri, G., Zhou, Y., Brutschea, E., Taniguchi, T., Watanabe, K., Yang, Y., Morales, M. A., Zhang, S., Millis, A. J., Lukin, M. D., Kim, P., Demler, E., Park, H. 2025
  • Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond PHYSICAL REVIEW X Rosenthal, E. I., Biswas, S., Scuri, G., Lee, H., Stein, A. J., Kleidermacher, H. C., Grzesik, J., Rugar, A. E., Aghaeimeibodi, S., Riedel, D., Titze, M., Bielejec, E. S., Choi, J., Anderson, C. P., Vu, J. 2024; 14 (4)
  • Controlled interlayer exciton ionization in an electrostatic trap in atomically thin heterostructures. Nature communications Joe, A. Y., Mier Valdivia, A. M., Jauregui, L. A., Pistunova, K., Ding, D., Zhou, Y., Scuri, G., De Greve, K., Sushko, A., Kim, B., Taniguchi, T., Watanabe, K., Hone, J. C., Lukin, M. D., Park, H., Kim, P. 2024; 15 (1): 6743

    Abstract

    Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above 2 × 1012 cm-2 can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.

    View details for DOI 10.1038/s41467-024-51128-9

    View details for PubMedID 39112505

    View details for PubMedCentralID PMC11306233

  • An Inverse-Designed Nanophotonic Interface for Excitons in Atomically Thin Materials. Nano letters Gelly, R. J., White, A. D., Scuri, G., Liao, X., Ahn, G. H., Deng, B., Watanabe, K., Taniguchi, T., Vučković, J., Park, H. 2023

    Abstract

    Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with a photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenide (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.

    View details for DOI 10.1021/acs.nanolett.3c02931

    View details for PubMedID 37695253

  • Microwave Spin Control of a Tin-Vacancy Qubit in Diamond PHYSICAL REVIEW X Rosenthal, E. I., Anderson, C. P., Kleidermacher, H. C., Stein, A. J., Lee, H., Grzesik, J., Scuri, G., Rugar, A. E., Riedel, D., Aghaeimeibodi, S., Ahn, G., Van Gasse, K., Vuekovie, J. 2023; 13 (3)