Bio

Haotian Su is a Ph.D. candidate in Electrical Engineering at Stanford University, co-advised by Prof. Eric Pop and Prof. Shan X. Wang. He received his B.S. in EE from National University of Singapore (2022). His research focuses on developing novel materials and thin films for energy-efficient memories and computing, including magnetic random-access memory (MRAM), oxide transistors, and other nanoscale devices.

Education & Certifications

  • B.S., National University of Singapore, Electrical Engineering (2022)
  • M.S., Stanford University, Electrical Engineering (2025)

Contact

  • Academic
    hsu007@stanford.edu
    University - Student Department: Electrical Engineering Position: Graduate

Additional Info

  • Mail Code: 9505

Links

All Publications

  • High-Field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors. ACS nano Su, H., Lee, Y., Pena, T., Fultz-Waters, S., Kang, J., Koroglu, C., Wahid, S., Newcomb, C. J., Song, Y. S., Wong, H. P., Wang, S. X., Pop, E. 2025

    Abstract

    Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (4 nm) amorphous indium tin oxide (ITO) transistors with scanning thermal microscopy (SThM) and multiphysics simulations. The ITO devices break irreversibly at channel temperatures of 180 and 340 °C on SiO2 and HfO2 substrates, respectively, with failure primarily caused by thermally-induced compressive strain near the device contacts. Combining SThM measurements with simulations allows us to estimate a thermal boundary conductance of 35 ± 12 MWm-2K-1 for ITO on SiO2 and 51 ± 14 MWm-2K-1 for ITO on HfO2. The latter also enables significantly higher breakdown power due to better heat dissipation and closer thermal expansion matching. These findings provide insights into the thermo-mechanical limitations of indium-based amorphous oxide transistors, which are important for more reliable and high-performance logic and memory applications.

    View details for DOI 10.1021/acsnano.5c01572

    View details for PubMedID 40259618

  • Enhanced spin-torque efficiency by metal insertion in the Pt/Co/MgO system PHYSICAL REVIEW B Xue, F., Hwang, W., Klewe, C., Song, M., Su, H., Shafer, P., Tsai, W., Bao, X., Wang, S. X. 2024; 110 (17)

    View details for DOI 10.1103/PhysRevB.110.174437

    View details for Web of Science ID 001373400200002

  • Thermal Characterization of Ultrathin MgO Tunnel Barriers. Nano letters Su, H., Kwon, H., Xue, F., Sato, N., Bhat, U., Tsai, W., Bosman, M., Asheghi, M., Goodson, K. E., Pop, E., Wang, S. X. 2024

    Abstract

    Magnetic tunnel junctions (MTJs) with ultrathin MgO tunnel barriers are at the heart of magnetic random-access memory (MRAM) and exhibit potential for spin caloritronics applications due to the tunnel magneto-Seebeck effect. However, the high programming current in MRAM can cause substantial heating which degrades the endurance and reliability of MTJs. Here, we report the thermal characterization of ultrathin CoFeB/MgO multilayers with total thicknesses of 4.4, 8.8, 22, and 44 nm, and with varying MgO thicknesses (1.0, 1.3, and 1.6 nm). Through time-domain thermoreflectance (TDTR) measurements and thermal modeling, we extract the intrinsic (3.6 W m-1 K-1) and effective (0.85 W m-1 K-1) thermal conductivities of annealed 1.0 nm thick MgO at room temperature. Our study reveals the thermal properties of ultrathin MgO tunnel barriers, especially the role of thermal boundary resistance, and contributes to a more precise thermal analysis of MTJs to improve the design and reliability of MRAM technologies.

    View details for DOI 10.1021/acs.nanolett.4c02571

    View details for PubMedID 39503294

  • Thermal optimization of two-terminal SOT-MRAM JOURNAL OF APPLIED PHYSICS Su, H., Kwon, H., Hwang, W., Xue, F., Koroglu, C., Tsai, W., Asheghi, M., Goodson, K. E., Wang, S. X., Pop, E. 2024; 136 (1)

    View details for DOI 10.1063/5.0211620

    View details for Web of Science ID 001260943300007