Hugo (Jiun-Yu) Chen received his B.S. in Materials Science and Engineering from National Dong Hwa University in 2017 and M.S. in Photonics and Optoelectronics from National Taiwan University in 2019. He was an R&D engineer with Taiwan Semiconductor Manufacturing Company (TSMC) in High Power Program, Analog Power/RF Specialty Technology from 2019 to 2022. His previous research experience includes Group-III nitride growth by molecular beam epitaxy (MBE), multi-channel nanowires oxide-based thin-film transistors (TFTs), and 6” enhancement mode GaN power HEMTs for 650V power conversion applications. Hugo is pursuing a Ph.D. in Electrical Engineering at Stanford University since September 2022.
Education & Certifications
M.S., National Taiwan University, Photonics & Optoelectronics (2019)
B.S., National Dong Hwa University, Materials Science & Engineering (2017)
R&D Engineer, Taiwan Semiconductor Manufacturing Company (10/21/2019 - 9/1/2022)
Analog Power and Specialty Technology
High Power Program
GaN Power HEMTs for 650 V applications
High Power Program, Analog Power & Specialty Technology Division (More than Moore)
• Working on the research and development of enhancement mode GaN high electron mobility transistors (HEMTs) for 650 V power applications.
• Development of next-generation (TSMC GaN E650V Generation-2) 6” GaN-on-Si HEMTs for mass production by considering aspects such as novel structure design, reliability, system performance, and yield.
• 8-inch GaN on Si project for GaN 650V Gen3 power HEMTs.
Effects of substrate pre-nitridation and post-nitridation processes on InN quantum dots with crystallinity by droplet epitaxy
SURFACE & COATINGS TECHNOLOGY
2017; 324: 491-497
View details for DOI 10.1016/j.surfcoat.2017.06.025
View details for Web of Science ID 000406988200056
Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique
NANOSCALE RESEARCH LETTERS
2016; 11: 241
In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 10(11) cm(-2) for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface condition, indium droplets, and the formation of InN nanodots are identified during the epitaxy. The X-ray photoelectron spectroscopy and photoluminescence measurements have shown the formation of InN nanodots as well. The growth mechanism of InN nanodots could be described via the characterizations of indium droplets and InN nanodots using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The density of the InN nanodots was less than that of the In droplets due to the surface diffusion and desorption of atoms during the nitridation and annealing process. The average size and density of InN nanodots can be controlled by the substrate temperatures during the growth. For the growth at lower temperature, we obtained the higher density and smaller average size of InN nanodots. To minimize the total surface energy, the coarsening and some preferred orientations of InN nanodots were observed for the growth at high temperature.
View details for DOI 10.1186/s11671-016-1455-0
View details for Web of Science ID 000375789000004
View details for PubMedID 27142879
View details for PubMedCentralID PMC4854854