Hugo "Jiun-Yu" Chen is currently pursuing his Ph.D. degree in the Department of Electrical Engineering at Stanford University. He earned his M.S. in Photonics and Optoelectronics from National Taiwan University in 2019 and his B.S. in Materials Science and Engineering from National Dong Hwa University in 2017.

Prior to joining Stanford, Hugo worked as an R&D engineer at Taiwan Semiconductor Manufacturing Company (TSMC) in the High Power Program and Analog Power/RF Specialty Technology from 2019 to 2022. His research experience includes investigating GaN high electron mobility transistors (HEMTs) for high power converter applications, oxide-based thin-film transistors (TFTs) for CMOS inverter applications, and III-V quantum dots molecular beam epitaxy (MBE) material growth.

As the first author, Hugo has published two peer-reviewed journal articles, six conference papers, and one US/KR/TW/CN/DE patent. He is currently advised by Professors H.-S. Philip Wong and Kwabena Boahen, and his research focuses on developing ferroelectric field-effect transistors (FeFETs) for dendritic-centric learning.

In his leisure time, Hugo enjoys biking, playing badminton, and watching dramas.

Education & Certifications

  • M.S., National Taiwan University, Photonics & Optoelectronics (2019)
  • B.S., National Dong Hwa University, Materials Science & Engineering (2017)


  • Jiun-Yu Chen. "United States Patent US20220375875A1 Crack stop ring trench to prevent epitaxy crack propagation", Taiwan Semiconductor Manufacturing Co, Nov 24, 2022

Work Experience

  • R&D Engineer, Taiwan Semiconductor Manufacturing Company (10/21/2019 - 9/1/2022)

    Analog Power and Specialty Technology
    High Power Program

    GaN Power HEMTs for 650 V applications

    High Power Program, Analog Power & Specialty Technology Division (More than Moore)

    • Working on the research and development of enhancement mode GaN high electron mobility transistors (HEMTs) for 650 V power applications.

    • Development of next-generation (TSMC GaN E650V Generation-2) 6” GaN-on-Si HEMTs for mass production by considering aspects such as novel structure design, reliability, system performance, and yield.

    • 8-inch GaN on Si project for GaN 650V Gen3 power HEMTs.


    Hsinchu City

All Publications

  • Effects of substrate pre-nitridation and post-nitridation processes on InN quantum dots with crystallinity by droplet epitaxy SURFACE & COATINGS TECHNOLOGY Chen, H., Su, Y., Yang, D., Huang, T., Yu, I. 2017; 324: 491-497
  • Formation and Temperature Effect of InN Nanodots by PA-MBE via Droplet Epitaxy Technique NANOSCALE RESEARCH LETTERS Chen, H., Yang, D., Huang, T., Yu, I. 2016; 11: 241


    In this report, self-organized indium nitride nanodots have been grown on Si (111) by droplet epitaxy method and their density can reach as high as 2.83 × 10(11) cm(-2) for the growth at low temperature of 250 °C. Based on the in situ reflection high-energy electron diffraction, the surface condition, indium droplets, and the formation of InN nanodots are identified during the epitaxy. The X-ray photoelectron spectroscopy and photoluminescence measurements have shown the formation of InN nanodots as well. The growth mechanism of InN nanodots could be described via the characterizations of indium droplets and InN nanodots using scanning electron microscopy, atomic force microscopy, and transmission electron microscopy. The density of the InN nanodots was less than that of the In droplets due to the surface diffusion and desorption of atoms during the nitridation and annealing process. The average size and density of InN nanodots can be controlled by the substrate temperatures during the growth. For the growth at lower temperature, we obtained the higher density and smaller average size of InN nanodots. To minimize the total surface energy, the coarsening and some preferred orientations of InN nanodots were observed for the growth at high temperature.

    View details for DOI 10.1186/s11671-016-1455-0

    View details for Web of Science ID 000375789000004

    View details for PubMedID 27142879

    View details for PubMedCentralID PMC4854854