Jarod Meyer
Ph.D. Student in Materials Science and Engineering, admitted Autumn 2020
Bio
Jarod is a PhD Candidate in Materials Science and Engineering advised by Professor Kunal Mukherjee. At Stanford, his research focuses on investigating the Molecular beam epitaxial growth and optoelectronic properties of IV-VI semiconductor alloys for mid-infrared light emitting diode applications. Prior to Stanford, he received his undergraduate degree in Materials Science and Engineering at the University of Illinois at Urbana-Champaign, where he worked in Professor Can Bayram’s lab on light emission in III-Nitride semiconductor materials
Honors & Awards
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TomKat Graduate Fellowship for Translational Research, TomKat Center for Sustainable Energy (2023)
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NSF-GRFP Honorable Mention, National Science Foundation (2022)
All Publications
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Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared
JOURNAL OF APPLIED PHYSICS
2025; 137 (14)
View details for DOI 10.1063/5.0250085
View details for Web of Science ID 001471646300001
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Engineering PbSnSe Heterostructures for Luminescence Out to 8 μm at Room Temperature
ADVANCED OPTICAL MATERIALS
2024
View details for DOI 10.1002/adom.202401746
View details for Web of Science ID 001312005000001
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Mid-wave infrared photoluminescence from low-temperature-grown PbSe epitaxial films on GaAs after rapid thermal annealing
APPLIED PHYSICS LETTERS
2023; 123 (13)
View details for DOI 10.1063/5.0160802
View details for Web of Science ID 001078318100022
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Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates
PHYSICAL REVIEW MATERIALS
2023; 7 (2)
View details for DOI 10.1103/PhysRevMaterials.7.024602
View details for Web of Science ID 000936582300003
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Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
APL MATERIALS
2021; 9 (11)
View details for DOI 10.1063/5.0070555
View details for Web of Science ID 000720009100002
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Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
2021; 39 (2)
View details for DOI 10.1116/6.0000774
View details for Web of Science ID 000629844400001
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Systematic study of shockley-read-hall and radiative recombination in GaN on Al2O3, freestanding GaN, and GaN on Si
JOURNAL OF PHYSICS-PHOTONICS
2020; 2 (3)
View details for DOI 10.1088/2515-7647/ab9072
View details for Web of Science ID 000572936900001