Bio


Jarod is a PhD Candidate in Materials Science and Engineering advised by Professor Kunal Mukherjee. At Stanford, his research focuses on investigating the Molecular beam epitaxial growth and optoelectronic properties of IV-VI semiconductor alloys for mid-infrared light emitting diode applications. Prior to Stanford, he received his undergraduate degree in Materials Science and Engineering at the University of Illinois at Urbana-Champaign, where he worked in Professor Can Bayram’s lab on light emission in III-Nitride semiconductor materials

Honors & Awards


  • TomKat Graduate Fellowship for Translational Research, TomKat Center for Sustainable Energy (2023)
  • NSF-GRFP Honorable Mention, National Science Foundation (2022)

All Publications


  • Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared JOURNAL OF APPLIED PHYSICS Xiao, K., Wong, B., Meyer, J., Nordin, L., Mukherjee, K. 2025; 137 (14)

    View details for DOI 10.1063/5.0250085

    View details for Web of Science ID 001471646300001

  • Engineering PbSnSe Heterostructures for Luminescence Out to 8 μm at Room Temperature ADVANCED OPTICAL MATERIALS Meyer, J. E., Nordin, L., Carrasco, R. A., Webster, P. T., Dumont, M., Mukherjee, K. 2024
  • Mid-wave infrared photoluminescence from low-temperature-grown PbSe epitaxial films on GaAs after rapid thermal annealing APPLIED PHYSICS LETTERS Meyer, J. E., Nordin, L., Nguyen, T., Mukherjee, K. 2023; 123 (13)

    View details for DOI 10.1063/5.0160802

    View details for Web of Science ID 001078318100022

  • Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates PHYSICAL REVIEW MATERIALS Haidet, B. B., Meyer, J., Reddy, P., Hughes, E. T., Mukherjee, K. 2023; 7 (2)
  • Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs APL MATERIALS Meyer, J., Muhowski, A. J., Nordin, L., Hughes, E., Haidet, B., Wasserman, D., Mukherjee, K. 2021; 9 (11)

    View details for DOI 10.1063/5.0070555

    View details for Web of Science ID 000720009100002

  • Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Haidet, B. B., Nordin, L., Muhowski, A. J., Vallejo, K. D., Hughes, E. T., Meyer, J., Simmonds, P. J., Wasserman, D., Mukherjee, K. 2021; 39 (2)

    View details for DOI 10.1116/6.0000774

    View details for Web of Science ID 000629844400001

  • Systematic study of shockley-read-hall and radiative recombination in GaN on Al2O3, freestanding GaN, and GaN on Si JOURNAL OF PHYSICS-PHOTONICS Meyer, J., Liu, R., Schaller, R. D., Lee, H., Bayram, C. 2020; 2 (3)