Lauren Hoang

All Publications

• Understanding the Impact of Contact-Induced Strain on the Electrical Performance of Monolayer WS2 Transistors. Nano letters Hoang, L., Jaikissoon, M., Köroğlu, Ç., Zhang, Z., Bennett, R. K., Song, J. H., Yang, J. A., Ko, J. S., Brongersma, M. L., Saraswat, K. C., Pop, E., Mannix, A. J. 2024

  Abstract

  Two-dimensional (2D) electronics require low contact resistance (RC) to approach their fundamental limits. WS2 is a promising 2D semiconductor that is often paired with Ni contacts, but their operation is not well understood considering the nonideal alignment between the Ni work function and the WS2 conduction band. Here, we investigate the effects of contact size on nanoscale monolayer WS2 transistors and uncover that Ni contacts impart stress, which affects the WS2 device performance. The strain applied to the WS2 depends on contact size, where long (1 μm) contacts (RC ≈ 1.7 kΩ·μm) show a 78% reduction in RC compared to shorter (0.1 μm) contacts (RC ≈ 7.8 kΩ·μm). We also find that thermal annealing can relax the WS2 strain in long-contact devices, increasing RC to 8.5 kΩ·μm. These results reveal that thermo-mechanical phenomena can significantly influence 2D semiconductor-metal contacts, presenting opportunities to optimize device performance through nanofabrication and thermal budget.

  View details for DOI 10.1021/acs.nanolett.4c02616

  View details for PubMedID 39365938

• Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition. ACS nano Zhang, Z., Hoang, L., Hocking, M., Peng, Z., Hu, J., Zaborski, G., Reddy, P. D., Dollard, J., Goldhaber-Gordon, D., Heinz, T. F., Pop, E., Mannix, A. J. 2024

  Abstract

  Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS2 growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO2, and Au. These WS2 films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm2 V-1 s-1. Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS2, MoxW1-xS2 alloys, and in-plane WS2-MoS2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.

  View details for DOI 10.1021/acsnano.4c02164

  View details for PubMedID 39230253

• Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides. ACS nano Yang, J. A., Bennett, R. K., Hoang, L., Zhang, Z., Thompson, K. J., Michail, A., Parthenios, J., Papagelis, K., Mannix, A. J., Pop, E. 2024

  Abstract

  Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS2, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well characterized in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe electron transport in monolayer WS2 and MoS2 transistors. This approach experimentally achieves 2* higher on-state current and mobility with 0.3% applied biaxial strain in WS2, the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering in 2D semiconductors for flexible electronics, sensors, integrated circuits, and other optoelectronic applications.

  View details for DOI 10.1021/acsnano.3c08996

  View details for PubMedID 38921699

• Effect of Back-Gate Dielectric on Indium Tin Oxide (ITO) Transistor Performance and Stability IEEE TRANSACTIONS ON ELECTRON DEVICES Daus, A., Hoang, L., Gilardi, C., Wahid, S., Kwon, J., Qin, S., Ko, J., Islam, M., Kumar, A., Neilson, K. M., Saraswat, K. C., Mitra, S., Wong, H., Pop, E. 2023; 70 (11): 5685-5689

  View details for DOI 10.1109/TED.2023.3319300

  View details for Web of Science ID 001202577500026

• Thiol-based defect healing of WSe2 and WS2 NPJ 2D MATERIALS AND APPLICATIONS Schwarz, A., Alon-Yehezkel, H., Levi, A., Yadav, R., Majhi, K., Tzuriel, Y., Hoang, L., Bailey, C. S., Brumme, T., Mannix, A. J., Cohen, H., Yalon, E., Heine, T., Pop, E., Cheshnovsky, O., Naveh, D. 2023; 7 (1)

  View details for DOI 10.1038/s41699-023-00421-0

  View details for Web of Science ID 001053706300001