Bio


Maritha Wang is a Ph.D. candidate in the Department of Materials Science and Engineering at Stanford University, advised by Prof. Eric Pop. She received her B.A. in Physics and B.S. in Chemistry with Honors from the University of Chicago in 2020. Her research focuses on elucidating the electronic transport properties of 2D materials using simulations towards next-generation electronics. She is a recipient of the NSF Graduate Research Fellowship and the Stanford Shoucheng Zhang Graduate Fellowship.

Honors & Awards


  • Biodesign NEXT, Stanford University (2025)
  • Graduate Public Service Fellowship, Stanford University (2024-2025)
  • Shoucheng Zhang Graduate Fellowship (Quantum Science and Engineering Fellowship), Stanford University (2020 - 2025)
  • NSF Graduate Research Fellowship, National Science Foundation (2020 - 2025)
  • Norman H. Nachtrieb Memorial Award, University of Chicago (2020)
  • Barry M. Goldwater Scholarship, Barry Goldwater Scholarship and Excellence in Education Foundation (2019)

Education & Certifications


  • M.S., Stanford University, Materials Science and Engineering (2024)
  • B.A., University of Chicago, Physics (2020)
  • B.S., University of Chicago, Chemistry (2020)

All Publications


  • Monte Carlo Simulation of Electrical Transport with Joule Heating and Strain in Monolayer MoS2 Devices. Nano letters Wang, M. A., Pop, E. 2025

    Abstract

    Two-dimensional (2D) semiconductors are candidates for future nanoscale (e.g., nanosheet) transistors, wherein high current densities and high-density integration cause self-heating, limiting performance and reliability. Here, we study the effects of self-heating and strain on electrical transport in monolayer MoS2 using electro-thermal Monte Carlo simulations. Incorporating Joule self-heating with a generalizable thermal resistance model reveals that at high lateral field (∼5 V/μm) and high charge carrier density (∼1013 cm-2), transistor temperatures can increase by more than 200 K in steady state. The electron saturation velocity decreases to 2.1 × 106 cm/s with self-heating but can reach 5.3 × 106 cm/s at room temperature if self-heating is mitigated and tensile strain is applied to reduce intervalley scattering. Simulations also reveal that electron mean free paths are just 2-3 nm in this high-field regime. These results provide fundamental insights showing that both self-heating and strain must be considered in emerging 2D transistors.

    View details for DOI 10.1021/acs.nanolett.4c05254

    View details for PubMedID 40237296

  • Stretchable transistors and functional circuits for human-integrated electronics NATURE ELECTRONICS Dai, Y., Hu, H., Wang, M., Xu, J., Wang, S. 2021; 4 (1): 17-29
  • Capillary Origami with Atomically Thin Membranes NANO LETTERS Reynolds, M. F., McGill, K. L., Wang, M. A., Gao, H., Mujid, F., Kang, K., Park, J., Miskin, M. Z., Cohen, I., McEuen, P. L. 2019; 19 (9): 6221-6226

    Abstract

    Small-scale optical and mechanical components and machines require control over three-dimensional structure at the microscale. Inspired by the analogy between paper and two-dimensional materials, origami-style folding of atomically thin materials offers a promising approach for making microscale structures from the thinnest possible sheets. In this Letter, we show that a monolayer of molybdenum disulfide (MoS2) can be folded into three-dimensional shapes by a technique called capillary origami, in which the surface tension of a droplet drives the folding of a thin sheet. We define shape nets by patterning rigid metal panels connected by MoS2 hinges, allowing us to fold micron-scale polyhedrons. Finally, we demonstrate that these shapes can be folded in parallel without the use of micropipettes or microfluidics by means of a microemulsion of droplets that dissolves into the bulk solution to drive folding. These results demonstrate controllable folding of the thinnest possible materials using capillary origami and indicate a route forward for design and parallel fabrication of more complex three-dimensional micron-scale structures and machines.

    View details for DOI 10.1021/acs.nanolett.9b02281

    View details for Web of Science ID 000486361900050

    View details for PubMedID 31430164