Stanford Advisors


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All Publications


  • Retraction Note: Quantized Majorana conductance (vol 581, E4, 2020) NATURE Zhang, H., Liu, C., Gazibegovic, S., Xu, D., Logan, J. A., Wang, G., van Loo, N., Bommer, J. S., de Moor, M. A., Car, D., Veld, R., van Veldhoven, P. J., Koelling, S., Verheijen, M. A., Pendharkar, M., Pennachio, D. J., Shojaei, B., Lee, J., Palmstrom, C. J., Bakkers, E. M., Das Sarma, S., Kouwenhoven, L. P. 2021; 591 (7851): E30

    View details for DOI 10.1038/s41586-021-03373-x

    View details for Web of Science ID 000751894400001

    View details for PubMedID 33686283

  • In-plane selective area InSb-Al nanowire quantum networks (vol 3, 59, 2020) COMMUNICATIONS PHYSICS Op Het Veld, R. M., Xu, D., Schaller, V., Verheijen, M. A., Peters, S. E., Jung, J., Tong, C., Wang, Q., de Moor, M. A., Hesselmann, B., Vermeulen, K., Bommer, J. S., Lee, J., Sarikov, A., Pendharkar, M., Marzegalli, A., Koelling, S., Kouwenhoven, L. P., Miglio, L., Palmstrom, C. J., Zhang, H., Bakkers, E. M. 2021; 4 (1)
  • Mechanism for embedded in-plane self-assembled nanowire formation PHYSICAL REVIEW MATERIALS Wilson, N. S., Kraemer, S., Pennachio, D. J., Callahan, P., Pendharkar, M., Palmstrom, C. J. 2020; 4 (6)
  • In-plane selective area InSb-Al nanowire quantum networks COMMUNICATIONS PHYSICS Veld, R., Xu, D., Schaller, V., Verheijen, M. A., Peters, S. E., Jung, J., Tong, C., Wang, Q., de Moor, M. A., Hesselmann, B., Vermeulen, K., Bommer, J. S., Lee, J., Sarikov, A., Pendharkar, M., Marzegalli, A., Koelling, S., Kouwenhoven, L. P., Miglio, L., Palmstrom, C. J., Zhang, H., Bakkers, E. M. 2020; 3 (1)
  • Transport studies in a gate-tunable three-terminal Josephson junction PHYSICAL REVIEW B Graziano, G., Lee, J., Pendharkar, M., Palmstrom, C., Pribiag, V. S. 2020; 101 (5)
  • Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces PHYSICAL REVIEW MATERIALS Lee, J., Choi, S., Pendharkar, M., Pennachio, D. J., Markman, B., Seas, M., Koelling, S., Verheijen, M. A., Casparis, L., Petersson, K. D., Petkovic, I., Schaller, V., Rodwell, M. W., Marcus, C. M., Krogstrup, P., Kouwenhoven, L. P., Bakkers, E. M., Palmstrom, C. J. 2019; 3 (8)
  • Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001) PHYSICAL REVIEW MATERIALS Lee, J., Shojaei, B., Pendharkar, M., Feldman, M., Mukherjee, K., Palmstrom, C. J. 2019; 3 (1)
  • Parity transitions in the superconducting ground state of hybrid InSb-Al Coulomb islands NATURE COMMUNICATIONS Shen, J., Heedt, S., Borsoi, F., van Heck, B., Gazibegovic, S., Veld, R., Car, D., Logan, J. A., Pendharkar, M., Ramakers, S. J., Wang, G., Xu, D., Bouman, D., Geresdi, A., Palmstrom, C. J., Bakkers, E. M., Kouwenhoven, L. P. 2018; 9: 4801

    Abstract

    The number of electrons in small metallic or semiconducting islands is quantised. When tunnelling is enabled via opaque barriers this number can change by an integer. In superconductors the addition is in units of two electron charges (2e), reflecting that the Cooper pair condensate must have an even parity. This ground state (GS) is foundational for all superconducting qubit devices. Here, we study a hybrid superconducting-semiconducting island and find three typical GS evolutions in a parallel magnetic field: a robust 2e-periodic even-parity GS, a transition to a 2e-periodic odd-parity GS, and a transition from a 2e- to a 1e-periodic GS. The 2e-periodic odd-parity GS persistent in gate-voltage occurs when a spin-resolved subgap state crosses zero energy. For our 1e-periodic GSs we explicitly show the origin being a single zero-energy state gapped from the continuum, i.e., compatible with an Andreev bound states stabilized at zero energy or the presence of Majorana zero modes.

    View details for DOI 10.1038/s41467-018-07279-7

    View details for Web of Science ID 000450161100001

    View details for PubMedID 30442935

    View details for PubMedCentralID PMC6237907

  • Electric field tunable superconductor-semiconductor coupling in Majorana nanowires NEW JOURNAL OF PHYSICS de Moor, M. A., Bommer, J. S., Xu, D., Winkler, G. W., Antipov, A. E., Bargerbos, A., Wang, G., van Loo, N., Veld, R., Gazibegovic, S., Car, D., Logan, J. A., Pendharkar, M., Lee, J., Bakkers, E. M., Palmstrom, C. J., Lutchyn, R. M., Kouwenhoven, L. P., Zhang, H. 2018; 20
  • Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS McFadden, A., Wilson, N., Brown-Heft, T., Pennachio, D., Pendharkar, M., Logan, J. A., Palmstrom, C. J. 2017; 444: 383-389
  • Ultrawide thermal free-carrier tuning of dielectric antennas coupled to epsilon-near-zero substrates NATURE COMMUNICATIONS Iyer, P. P., Pendharkar, M., Palmstrom, C. J., Schuller, J. A. 2017; 8: 472

    Abstract

    The principal challenge for achieving reconfigurable optical antennas and metasurfaces is the need to generate continuous and large tunability of subwavelength, low-Q resonators. We demonstrate continuous and steady-state refractive index tuning at mid-infrared wavelengths using temperature-dependent control over the low-loss plasma frequency in III-V semiconductors. In doped InSb we demonstrate nearly two-fold increase in the electron effective mass leading to a positive refractive index shift (Δn > 1.5) that is an order of magnitude greater than conventional thermo-optic effects. In undoped films we demonstrate more than 10-fold change in the thermal free-carrier concentration producing a near-unity negative refractive index shift. Exploiting both effects within a single resonator system-intrinsic InSb wires on a heavily doped (epsilon-near-zero) InSb substrate-we demonstrate dynamically steady-state tunable Mie resonances. The observed line-width resonance shifts (Δλ > 1.7 μm) suggest new avenues for highly tunable and steady-state mid-infrared semiconductor antennas.Achieving large tunability of subwavelength resonators is a central challenge in nanophotonics. Here the authors demonstrate refractive index tuning at mid-infrared wavelengths using temperature-dependent control over the low loss plasma frequency in III-V semiconductors.

    View details for DOI 10.1038/s41467-017-00615-3

    View details for Web of Science ID 000409997500006

    View details for PubMedID 28883391

    View details for PubMedCentralID PMC5589832

  • Electrically Reconfigurable Metasurfaces Using Heterojunction Resonators ADVANCED OPTICAL MATERIALS Iyer, P. P., Pendharkar, M., Schuller, J. A. 2016; 4 (10): 1582-1588