Minkyung Han

All Publications

• Superconductivity in compressed quasi-one-dimensional face-sharing hexagonal perovskite chalcogenides. Science advances Ke, F., Niu, S., Feng, J., Yin, K., Han, M., Yang, H., Wang, B. Y., Celeste, A., Jia, C., Chen, B., Wang, L., Hwang, H. Y., Tian, Y., Mao, W. L., Lin, Y. 2025; 11 (37): eadv1894

  Abstract

  Oxide perovskite superconductors typically feature stacks of metal-oxygen octahedra or planar blocks connected through corners, forming three-dimensional (3D) or 2D layered structures. Here, we find a group of quasi-1D superconducting materials among hexagonal perovskite chalcogenides with face-sharing connectivity. Resistance and magnetization measurements demonstrate anisotropic superconductivity in compressed barium titanium trisulfide (BaTiS3) at a low hole carrier concentration of (1.6 ± 0.1) × 1021 per cubic centimeter, with the highest superconducting temperature (Tc) reaching ~9.3 kelvin. Synchrotron x-ray diffraction indicates that the superconducting phase retains a hexagonal perovskite structure consisting of quasi-1D infinite titanium hexasulfide chains. Density functional theory calculations, combined with the observed decrease in the maximum Tc from ~9.3 to ~6.2 kelvin upon substituting sulfur with selenium, suggest that electron-phonon interactions play a key role in the pairing mechanism of superconducting BaTiX3 (X = sulfur and selenium). Our study offers a quasi-1D platform with face-sharing metal-chalcogen octahedra for understanding the mechanism of emerging electronic states in perovskite materials.

  View details for DOI 10.1126/sciadv.adv1894

  View details for PubMedID 40938990

  View details for PubMedCentralID PMC12429050

• Improving the creation of SiV centers in diamond via sub-μs pulsed annealing treatment. Nature communications Tzeng, Y. K., Ke, F., Jia, C., Liu, Y., Park, S., Han, M., Frost, M., Cai, X., Mao, W. L., Ewing, R. C., Cui, Y., Devereaux, T. P., Lin, Y., Chu, S. 2024; 15 (1): 7251

  Abstract

  Silicon-vacancy (SiV) centers in diamond are emerging as promising quantum emitters in applications such as quantum communication and quantum information processing. Here, we demonstrate a sub-μs pulsed annealing treatment that dramatically increases the photoluminescence of SiV centers in diamond. Using a silane-functionalized adamantane precursor and a laser-heated diamond anvil cell, the temperature and energy conditions required to form SiV centers in diamond were mapped out via an optical thermometry system with an accuracy of ±50 K and a 1 μs temporal resolution. Annealing scheme studies reveal that pulsed annealing can obviously minimize the migration of SiV centers out of the diamond lattice, and a 2.5-fold increase in the number of emitting centers was achieved using a series of 200-ns pulses at a 50 kHz repetition rate via acousto-optic modulation. Our study provides a novel pulsed annealing treatment approach to improve the efficiency of the creation of SiV centers in diamond.

  View details for DOI 10.1038/s41467-024-51523-2

  View details for PubMedID 39179592

  View details for PubMedCentralID 7097076

• Machine learning-empowered study of metastable γ-CsPbI₃ under pressure and strain JOURNAL OF MATERIALS CHEMISTRY A Han, M., Peng, C., Song, R., Ke, F., Nashed, Y. G., Mao, W. L., Jia, C., Lin, Y. 2024

  View details for DOI 10.1039/d4ta00174e

  View details for Web of Science ID 001199652300001