Honors & Awards

  • Stanford Graduate Fellowship Recipient, Stanford University (2020)
  • 2020 Fellow, Paul and Daisy Soros Fellowship for New Americans (2020)
  • NSF Graduate Research Fellowship Recipient, National Science Foundation (2020)

Education & Certifications

  • B.S., Massachusetts Institute of Technology, Materials Science and Engineering (2020)

All Publications

  • Versatile strain relief pathways in epitaxial films of (001)-oriented PbSe on III-V substrates PHYSICAL REVIEW MATERIALS Haidet, B. B., Meyer, J., Reddy, P., Hughes, E. T., Mukherjee, K. 2023; 7 (2)
  • Voltage control of magnetic order in RKKY coupled multilayers SCIENCE ADVANCES Kossak, A. E., Huang, M., Reddy, P., Wolf, D., Beach, G. D. 2023; 9 (1): eadd0548


    In the field of antiferromagnetic (AFM) spintronics, there is a substantial effort present to make AFMs viable active components for efficient and fast devices. Typically, this is done by manipulating the AFM Néel vector. Here, we establish a method of enabling AFM active components by directly controlling the magnetic order. We show that magneto-ionic gating of hydrogen enables dynamic control of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in solid-state synthetic AFM multilayer devices. Using a gate voltage, we tune the RKKY interaction to drive continuous transitions from AFM to FM and vice versa. The switching is submillisecond at room temperature and fully reversible. We validate the utility of this method by demonstrating that magneto-ionic gating of the RKKY interaction allows for 180° field-free deterministic switching. This dynamic method of controlling a fundamental exchange interaction can engender the manipulation of a broader array of spin textures, e.g., chiral domain walls and skyrmions.

    View details for DOI 10.1126/sciadv.add0548

    View details for Web of Science ID 000937027000016

    View details for PubMedID 36598984

    View details for PubMedCentralID PMC9812395