All Publications

  • Link between Gas Phase Reaction Chemistry and the Electronic Conductivity of Atomic Layer Deposited Titanium Oxide Thin Films. The journal of physical chemistry letters Babadi, A. S., Tang-Kong, R., McIntyre, P. C. 2021: 3625–32


    In situ monitoring of gas phase composition reveals the link between the changing gas phase chemistry during atomic layer deposition (ALD) half-cycle reactions and the electronic conductivity of ALD-TiO2 thin films. Dimethylamine ((CH3)2NH, DMA) is probed as the main product of both the TDMAT and water vapor half-reactions during the TDMAT/H2O ALD process. In-plane electronic transport characterization of the ALD grown films demonstrates that the presence of DMA, a reducing agent, in the ALD chamber throughout each half-cycle is correlated with both an increase in the films' electronic conductivity, and observation of titanium in the 3+ oxidation state by ex situ X-ray photoelectron spectroscopy analysis of the films. DMA annealing of as-grown TiO2 films in the ALD chamber produces a similar effect on their electronic characteristics, indicating the importance of DMA-induced oxygen deficiency of ALD-TiO2 in dictating the electronic conductivity of as-grown films.

    View details for DOI 10.1021/acs.jpclett.1c00115

    View details for PubMedID 33825465

  • Interfacing Low-Temperature Atomic Layer Deposited TiO2 Electron Transport Layers with Metal Electrodes ADVANCED MATERIALS INTERFACES Tan, W., Bowring, A. R., Babadi, A. S., Meng, A. C., Tang-Kong, R., McGehee, M. D., McIntyre, P. C. 2020; 7 (8)
  • Development of new Mg-Zn-Sr alloys for medical purpose Sulikova, M., Molcanova, Z., Ballokova, B., Durisin, J., Martinkova, S., Varcholova, D., Michalik, S., Tang-Kong, R., Ward, L., Mehta, A., Sulova, K., Fejercak, M., Lachova, A., Dzunda, R., Saksl, K. INDERSCIENCE ENTERPRISES LTD. 2020: 573–82
  • Reversible Decay of Oxygen Evolution Activity of Iridium Catalysts JOURNAL OF THE ELECTROCHEMICAL SOCIETY Tang-Kong, R., Chidsey, C. D., McIntyre, P. C. 2019; 166 (14): H712–H717
  • Atomic Layer Deposited TiO2-IrOx Alloys Enable Corrosion Resistant Water Oxidation on Silicon at High Photovoltage CHEMISTRY OF MATERIALS Hendricks, O. L., Tang-Kong, R., Babadi, A. S., McIntyre, P. C., Chidsey, C. D. 2019; 31 (1): 90–100
  • Silicon Photoanodes for Solar-Driven Oxidation of Brine: A Nanoscale, Photo-Active Analog of the Dimensionally-Stable Anode JOURNAL OF THE ELECTROCHEMICAL SOCIETY Tang-Kong, R., O'Rourke, C., Mills, A., McIntyre, P. C. 2018; 165 (16): H1072–H1079
  • The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes ACS APPLIED MATERIALS & INTERFACES Tang-Kong, R., Winter, R., Brock, R., Tracy, J., Eizenberg, M., Dauskardt, R. H., McIntyre, P. C. 2018; 10 (43): 37103-37109
  • The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes. ACS applied materials & interfaces Tang-Kong, R., Winter, R., Brock, R., Tracy, J., Eizenberg, M., Dauskardt, R. H., McIntyre, P. C. 2018


    Atomic layer deposited titanium dioxide (ALD-TiO2) has emerged as an effective protection layer for highly efficient semiconductor anodes which are normally unstable under the potential and pH conditions used to oxidize water in a photoelectrochemical cell. The failure modes of silicon anodes coated with an Ir/IrO x oxygen evolution catalyst layer are investigated, and poor catalyst/substrate adhesion is found to be a key factor in failed anodes. Quantitative measurements of interfacial adhesion energy show that the addition of TiO2 significantly improves reliability of anodes, yielding an adhesion energy of 6.02 ± 0.5 J/m2, more than double the adhesion energy measured in the absence of an ALD-TiO2 protection layer. These results indicate the importance of catalyst adhesion to an interposed protection layer in promoting operational stability of high efficiency semiconducting anodes during solar-driven water splitting.

    View details for PubMedID 30346686