- Discovering exceptionally hard and wear-resistant metallic glasses by combining machine-learning with high throughput experimentation APPLIED PHYSICS REVIEWS 2022; 9 (1)
Link between Gas Phase Reaction Chemistry and the Electronic Conductivity of Atomic Layer Deposited Titanium Oxide Thin Films.
The journal of physical chemistry letters
In situ monitoring of gas phase composition reveals the link between the changing gas phase chemistry during atomic layer deposition (ALD) half-cycle reactions and the electronic conductivity of ALD-TiO2 thin films. Dimethylamine ((CH3)2NH, DMA) is probed as the main product of both the TDMAT and water vapor half-reactions during the TDMAT/H2O ALD process. In-plane electronic transport characterization of the ALD grown films demonstrates that the presence of DMA, a reducing agent, in the ALD chamber throughout each half-cycle is correlated with both an increase in the films' electronic conductivity, and observation of titanium in the 3+ oxidation state by ex situ X-ray photoelectron spectroscopy analysis of the films. DMA annealing of as-grown TiO2 films in the ALD chamber produces a similar effect on their electronic characteristics, indicating the importance of DMA-induced oxygen deficiency of ALD-TiO2 in dictating the electronic conductivity of as-grown films.
View details for DOI 10.1021/acs.jpclett.1c00115
View details for PubMedID 33825465
- Interfacing Low-Temperature Atomic Layer Deposited TiO2 Electron Transport Layers with Metal Electrodes ADVANCED MATERIALS INTERFACES 2020; 7 (8)
- Development of new Mg-Zn-Sr alloys for medical purpose INDERSCIENCE ENTERPRISES LTD. 2020: 573–82
- Reversible Decay of Oxygen Evolution Activity of Iridium Catalysts JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2019; 166 (14): H712–H717
- Atomic Layer Deposited TiO2-IrOx Alloys Enable Corrosion Resistant Water Oxidation on Silicon at High Photovoltage CHEMISTRY OF MATERIALS 2019; 31 (1): 90–100
- Silicon Photoanodes for Solar-Driven Oxidation of Brine: A Nanoscale, Photo-Active Analog of the Dimensionally-Stable Anode JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2018; 165 (16): H1072–H1079
- The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes ACS APPLIED MATERIALS & INTERFACES 2018; 10 (43): 37103-37109
The Role of Catalyst Adhesion in ALD-TiO2 Protection of Water Splitting Silicon Anodes.
ACS applied materials & interfaces
Atomic layer deposited titanium dioxide (ALD-TiO2) has emerged as an effective protection layer for highly efficient semiconductor anodes which are normally unstable under the potential and pH conditions used to oxidize water in a photoelectrochemical cell. The failure modes of silicon anodes coated with an Ir/IrO x oxygen evolution catalyst layer are investigated, and poor catalyst/substrate adhesion is found to be a key factor in failed anodes. Quantitative measurements of interfacial adhesion energy show that the addition of TiO2 significantly improves reliability of anodes, yielding an adhesion energy of 6.02 ± 0.5 J/m2, more than double the adhesion energy measured in the absence of an ALD-TiO2 protection layer. These results indicate the importance of catalyst adhesion to an interposed protection layer in promoting operational stability of high efficiency semiconducting anodes during solar-driven water splitting.
View details for PubMedID 30346686