Bio

Wong studies the fabrication and design of high-performance integrated circuits.

Academic Appointments

Honors & Awards

  • Fellow, IEEE

Boards, Advisory Committees, Professional Organizations

  • Adviser, Atheros Qualcomm (1998 - 2018)
  • Board Director, Pericom Semiconductor (2006 - 2015)

Professional Education

  • PhD, UC Berkeley (1983)

Contact

  • Academic
    sswong@stanford.edu
    University - Emeritus faculty Department: Electrical Engineering Position: Emeritus Faculty, Acad Council
    • Allen 202
    • Stanford,  California  94305-4070 

Additional Info

2024-25 Courses

Stanford Advisees

All Publications

  • An international study presenting a federated learning AI platform for pediatric brain tumors. Nature communications Lee, E. H., Han, M., Wright, J., Kuwabara, M., Mevorach, J., Fu, G., Choudhury, O., Ratan, U., Zhang, M., Wagner, M. W., Goetti, R., Toescu, S., Perreault, S., Dogan, H., Altinmakas, E., Mohammadzadeh, M., Szymanski, K. A., Campen, C. J., Lai, H., Eghbal, A., Radmanesh, A., Mankad, K., Aquilina, K., Said, M., Vossough, A., Oztekin, O., Ertl-Wagner, B., Poussaint, T., Thompson, E. M., Ho, C. Y., Jaju, A., Curran, J., Ramaswamy, V., Cheshier, S. H., Grant, G. A., Wong, S. S., Moseley, M. E., Lober, R. M., Wilms, M., Forkert, N. D., Vitanza, N. A., Miller, J. H., Prolo, L. M., Yeom, K. W. 2024; 15 (1): 7615

    Abstract

    While multiple factors impact disease, artificial intelligence (AI) studies in medicine often use small, non-diverse patient cohorts due to data sharing and privacy issues. Federated learning (FL) has emerged as a solution, enabling training across hospitals without direct data sharing. Here, we present FL-PedBrain, an FL platform for pediatric posterior fossa brain tumors, and evaluate its performance on a diverse, realistic, multi-center cohort. Pediatric brain tumors were targeted due to the scarcity of such datasets, even in tertiary care hospitals. Our platform orchestrates federated training for joint tumor classification and segmentation across 19 international sites. FL-PedBrain exhibits less than a 1.5% decrease in classification and a 3% reduction in segmentation performance compared to centralized data training. FL boosts segmentation performance by 20 to 30% on three external, out-of-network sites. Finally, we explore the sources of data heterogeneity and examine FL robustness in real-world scenarios with data imbalances.

    View details for DOI 10.1038/s41467-024-51172-5

    View details for PubMedID 39223133

    View details for PubMedCentralID PMC11368946

  • Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects. ACS nano Huang, F., Saini, B., Wan, L., Lu, H., He, X., Qin, S., Tsai, W., Gruverman, A., Meng, A. C., Wong, H. P., McIntyre, P. C., Wong, S. 2024

    Abstract

    Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor memories. However, a fundamental challenge that persists is the lack of understanding regarding dimensional scaling, including thickness scaling and area scaling, of the functional properties and their heterogeneity in these films. In this work, excellent ferroelectricity and switching endurance are demonstrated in 4 nm-thick Hf0.5Zr0.5O2 (HZO) capacitors with molybdenum electrodes in capacitors as small as 65 nm × 45 nm in size. The HZO layer in these capacitors can be crystallized into the ferroelectric orthorhombic phase at the low temperature of 400 °C, making them compatible for back-end-of-line (BEOL) FE memories. With the benefits of thickness scaling, low operation voltage (1.2 V) is achieved with high endurance (>1010 cycles); however, a significant fatigue regime is noted. We observed that the bottom electrode, rather than the top electrode, plays a dominant role in the thickness scaling of HZO ferroelectric behavior. Furthermore, ultrahigh switched polarization (remanent polarization 2Pr ∼ 108 μC cm-2) is observed in some nanoscale devices. This study advances the understanding of dimensional scaling effects in HZO capacitors for high-performance FE memories.

    View details for DOI 10.1021/acsnano.4c01992

    View details for PubMedID 38916257

  • A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching Hsueh, Y. L., Lin, R. Q., Huang, Y. X., Lin, Y. H., Chang, K. H., Shen, T. H., Hsieh, E. R., Wong, S., IEEE IEEE. 2024: 103-105

    View details for DOI 10.1109/EDTM58488.2024.10512294

    View details for Web of Science ID 001223367200250

  • Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering. ACS applied materials & interfaces Huang, F., Saini, B., Yu, Z., Yoo, C., Thampy, V., He, X., Baniecki, J. D., Tsai, W., Meng, A. C., McIntyre, P. C., Wong, S. 2023

    Abstract

    Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal-oxide-semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors that are nearly free of polarization "wake-up"─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T-O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. These results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

    View details for DOI 10.1021/acsami.3c08895

    View details for PubMedID 37856882

  • First Observation of Ultra-high Polarization (~ 108 μC/cm2) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes IEEE Symposium on VLSI Technology and Circuits Huang, F., Saini, B., Wan, L., Lu, H., He, X., Qin, S., Tsai, W., Gruverman, A., Meng, A., Wong, H., McInytre, P., Wongf, S. 2023

    View details for DOI 10.23919/VLSITechnologyandCir57934.2023.10185240

  • Foundry Monolithic 3D BEOL Transistor + Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+RRAM vs. FEOL Silicon FET+RRAM IEEE Symposium on VLSI Technology and Circuits Srimani, T., Yu, C., Radway, R., Rich, D., Nelson, M., Wong, S., Murphy, D., Fuller, S., Hills, g., Mitra, S., Shulaker, M. 2023

    View details for DOI 10.23919/VLSITechnologyandCir57934.2023.10185414

  • Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors IEEE ELECTRON DEVICE LETTERS Huang, F., Passlack, M., Liew, S., Yu, Z., Lin, Q., Babadi, A., Hou, V., McIntyre, P. C., Wong, S. 2022; 43 (2): 212-215

    View details for DOI 10.1109/LED.2021.3136309

    View details for Web of Science ID 000748371400015

  • 4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory IEEE Symposium on VLSI Technology and Circuits Chen, W., Huang, F., Qin, S., Yu, Z., Lin, Q., McIntyre, P., Wong, S., Wong, H. 2022

    View details for DOI 10.1109/VLSITechnologyandCir46769.2022.9830242

  • 8-Layer 3D Vertical Ru/AlOxNy/TiN RRAM with Mega-Ω Level LRS for Low Power and Ultrahigh-density Memory IEEE Symposium on VLSI Technology and Circuits Qin, S., Tung, M., Belliveau, E., Liu, S., Kwon, J., Chen, W., Jiang, Z., Wong, S., Wong, H. 2022

    View details for DOI 10.1109/VLSITechnologyandCir46769.2022.9830164

  • RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays IEEE TRANSACTIONS ON ELECTRON DEVICES Le, B. Q., Levy, A., Wu, T. F., Radway, R. M., Hsieh, E., Zheng, X., Nelson, M., Raina, P., Wong, H., Wong, S., Mitra, S. 2021; 68 (9): 4397-4403

    View details for DOI 10.1109/TED.2021.3097975

    View details for Web of Science ID 000686761500038

  • 3-D Vertical via Nitrogen-Doped Aluminum Oxide Resistive Random-Access Memory IEEE TRANSACTIONS ON ELECTRON DEVICES Lien, Y., Wu, T., Wong, S. 2021; 68 (6): 2712-2716

    View details for DOI 10.1109/TED.2021.3075193

    View details for Web of Science ID 000652799800018

  • A FORMing-Free HfO2-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory With 3-Bit-Per-Cell Storage Capability IEEE TRANSACTIONS ON ELECTRON DEVICES Hsieh, E. R., Chen, K. T., Chen, P. Y., Wong, S. S., Chung, S. S. 2021; 68 (6): 2699-2704

    View details for DOI 10.1109/TED.2021.3074354

    View details for Web of Science ID 000652799800016

  • Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array IEEE ELECTRON DEVICE LETTERS Hsieh, E. R., Zheng, X., Le, B. Q., Shih, Y. C., Radway, R. M., Nelson, M., Mitra, S., Wong, S. 2021; 42 (3): 335–38

    View details for DOI 10.1109/LED.2021.3055017

    View details for Web of Science ID 000622098100010

  • Deep COVID DeteCT: an international experience on COVID-19 lung detection and prognosis using chest CT. NPJ digital medicine Lee, E. H., Zheng, J. n., Colak, E. n., Mohammadzadeh, M. n., Houshmand, G. n., Bevins, N. n., Kitamura, F. n., Altinmakas, E. n., Reis, E. P., Kim, J. K., Klochko, C. n., Han, M. n., Moradian, S. n., Mohammadzadeh, A. n., Sharifian, H. n., Hashemi, H. n., Firouznia, K. n., Ghanaati, H. n., Gity, M. n., Doğan, H. n., Salehinejad, H. n., Alves, H. n., Seekins, J. n., Abdala, N. n., Atasoy, Ç. n., Pouraliakbar, H. n., Maleki, M. n., Wong, S. S., Yeom, K. W. 2021; 4 (1): 11

    Abstract

    The Coronavirus disease 2019 (COVID-19) presents open questions in how we clinically diagnose and assess disease course. Recently, chest computed tomography (CT) has shown utility for COVID-19 diagnosis. In this study, we developed Deep COVID DeteCT (DCD), a deep learning convolutional neural network (CNN) that uses the entire chest CT volume to automatically predict COVID-19 (COVID+) from non-COVID-19 (COVID-) pneumonia and normal controls. We discuss training strategies and differences in performance across 13 international institutions and 8 countries. The inclusion of non-China sites in training significantly improved classification performance with area under the curve (AUCs) and accuracies above 0.8 on most test sites. Furthermore, using available follow-up scans, we investigate methods to track patient disease course and predict prognosis.

    View details for DOI 10.1038/s41746-020-00369-1

    View details for PubMedID 33514852

  • Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks IEEE TRANSACTIONS ON ELECTRON DEVICES Jiang, Z., Wang, Z., Zheng, X., Fong, S. W., Qin, S., Chen, H., Ahn, E. C., Cao, J., Nishi, Y., Wong, S., Wong, H. 2020; 67 (11): 4904–10

    View details for DOI 10.1109/TED.2020.3025849

    View details for Web of Science ID 000584285700062

  • A shallow convolutional neural network predicts prognosis of lung cancer patients in multi-institutional computed tomography image datasets Nature Machine Intelligence Mukherjee, P., Zhou, M., Lee, E., Schicht, A., Balagurunathan, Y., Napel, S., Gillies, R., Wong, S., Thieme, A., Leung, A., Gevaert, O. 2020; 2 (5): 274–282

    View details for DOI 10.1038/s42256-020-0173-6

  • Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)-Part I: Accurate and Computationally Efficient Modeling IEEE TRANSACTIONS ON ELECTRON DEVICES Qin, S., Jiang, Z., Li, H., Fujii, S., Lee, D., Wong, S., Wong, H. 2019; 66 (12): 5139–46

    View details for DOI 10.1109/TED.2019.2950606

    View details for Web of Science ID 000502043000014

  • Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)-Part II: Design Guidelines for Device, Array, and Architecture IEEE TRANSACTIONS ON ELECTRON DEVICES Jiang, Z., Qin, S., Li, H., Fujii, S., Lee, D., Wong, S., Wong, H. 2019; 66 (12): 5147–54

    View details for DOI 10.1109/TED.2019.2950595

    View details for Web of Science ID 000502043000015

  • DATASET CULLING: TOWARDS EFFICIENT TRAINING OF DISTILLATION-BASED DOMAIN SPECIFIC MODELS Yoshioka, K., Lee, E., Wong, S., Horowitz, M., IEEE IEEE. 2019: 3237–41

    View details for Web of Science ID 000521828603075

  • A Novel Architecture to Build Ideal-linearity Neuromorphic Synapses on a Pure Logic FinFET Platform Featuring 2.5ns PGM-time and 10(12) Endurance Hsieh, E. R., Chang, H. Y., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J., Cheng, O., Wong, S., IEEE IEEE. 2019: T138–T139

    View details for Web of Science ID 000555822600012

  • High-Density Multiple Bits-per-Cell 1T4R RRAM Array with Gradual SET/RESET and its Effectiveness for Deep Learning Hsieh, E. R., Giordano, M., Hodson, B., Levy, A., Osekowsky, S. K., Radway, R. M., Shih, Y. C., Wan, W., Wu, T. F., Zheng, X., Nelson, M., Le, B. Q., Wong, H. P., Mitra, S., Wong, S., IEEE IEEE. 2019

    View details for Web of Science ID 000553550000083

  • Deep learning to predict survival prognosis for patients with non-small cell lung cancer using images and clinical data Lee, E. H., Zhou, M., Gamboa, N., Brennan, K., Itakura, H., Nair, V., Napel, S., Wong, S., Gevaert, O. AMER ASSOC CANCER RESEARCH. 2018

    View details for DOI 10.1158/1538-7445.AM2018-3048

    View details for Web of Science ID 000468819500411

  • Selector Requirements for Tera-Bit Ultra-High-Density 3D Vertical RRAM Jiang, Z., Qin, S., Li, H., Fujii, S., Lee, D., Wong, S., Wong, H., IEEE IEEE. 2018: 107–8

    View details for Web of Science ID 000465075200039

  • Fault-Tolerant FPGA with Column-Based Redundancy and Power Gating Using RRAM IEEE TRANSACTIONS ON COMPUTERS Lee, K., Wong, S. S. 2017; 66 (6): 946-956

    View details for DOI 10.1109/TC.2016.2634533

    View details for Web of Science ID 000401084600003

  • Analysis and Design of a Passive Switched-Capacitor Matrix Multiplier for Approximate Computing IEEE JOURNAL OF SOLID-STATE CIRCUITS Lee, E. H., Wong, S. S. 2017; 52 (1): 261-271

    View details for DOI 10.1109/JSSC.2016.2599536

    View details for Web of Science ID 000395641800023

  • LOGNET: ENERGY-EFFICIENT NEURAL NETWORKS USING LOGARITHMIC COMPUTATION Lee, E. H., Miyashita, D., Chai, E., Murmann, B., Wong, S., IEEE IEEE. 2017: 5900–5904

    View details for Web of Science ID 000414286206013

  • TPAD: Hardware Trojan Prevention and Detection for Trusted Integrated Circuits IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS Wu, T. F., Ganesan, K., Hu, Y. A., Wong, H. P., Wong, S., Mitra, S. 2016; 35 (4): 521-534

    View details for DOI 10.1109/TCAD.2015.2474373

    View details for Web of Science ID 000372995000001

  • A Deep Learning Framework to Predict Survival from Medical Images of Lung Cancer Patients Conference on Neural Information Processing Systems, Workshop on Machine Learning for Health Lee, E., Zhou, M., Grove, O., Balagurunathan, Y., Echegaray, S., Gillies, R., Gamboa, N., Murmann, B., Napel, S., Wong, S., Gevaert, O. 2016
  • Switch Application in FPGA RESISTIVE SWITCHING: FROM FUNDAMENTALS OF NANOIONIC REDOX PROCESSES TO MEMRISTIVE DEVICE APPLICATIONS Sakamoto, T., Wong, S., Liauw, Y., Ielmini, D., Waser, R. 2016: 695-713

    View details for Web of Science ID 000459595300025

  • Fault-tolerant FPGA with Column-based Redundancy and Power Gating Using RRAM Lee, K., Wong, S., IEEE IEEE. 2016: 409–14

    View details for DOI 10.1109/ISVLSI.2016.86

    View details for Web of Science ID 000389508400070

  • A 2.5GHz 7.7TOPS/W Switched-Capacitor Matrix Multiplier with Co-designed Local Memory in 40nm Lee, E. H., Wong, S., IEEE IEEE. 2016: 418–U587

    View details for Web of Science ID 000382151400173

  • Monolithic 3-D FPGAs PROCEEDINGS OF THE IEEE Zhang, Z., Liauw, Y. Y., Chen, C., Wong, S. S. 2015; 103 (7): 1197-1210

    View details for DOI 10.1109/JPROC.2015.2433954

    View details for Web of Science ID 000356806900012

  • Compact One-Transistor-N-RRAM Array Architecture for Advanced CMOS Technology IEEE JOURNAL OF SOLID-STATE CIRCUITS Yeh, C. S., Wong, S. S. 2015; 50 (5): 1299-1309

    View details for DOI 10.1109/JSSC.2015.2402217

    View details for Web of Science ID 000354186300020

  • All-Metal-Nitride RRAM Devices IEEE ELECTRON DEVICE LETTERS Zhang, Z., Gao, B., Fang, Z., Wang, X., Tang, Y., Sohn, J., Wong, H. P., Wong, S. S., Lo, G. 2015; 36 (1): 29-31

    View details for DOI 10.1109/LED.2014.2367542

    View details for Web of Science ID 000347045200011

  • FACTORIZATION FOR ANALOG-TO-DIGITAL MATRIX MULTIPLICATION Lee, E. H., Udell, M., Wong, S., IEEE IEEE. 2015: 1061–65

    View details for Web of Science ID 000427402901036

  • The Role of Ti Capping Layer in HfOx-Based RRAM Devices IEEE ELECTRON DEVICE LETTERS Fang, Z., Wang, X. P., Sohn, J., Weng, B. B., Zhang, Z. P., Chen, Z. X., Tang, Y. Z., Lo, G., Provine, J., Wong, S. S., Wong, H. P., Kwong, D. 2014; 35 (9): 912-914

    View details for DOI 10.1109/LED.2014.2334311

    View details for Web of Science ID 000341574200007

  • Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM IEEE TRANSACTIONS ON ELECTRON DEVICES Kim, W., Park, S. I., Zhang, Z., Wong, S. 2014; 61 (6): 2158-2163

    View details for DOI 10.1109/TED.2014.2319074

    View details for Web of Science ID 000338026200081

  • Low-Temperature Monolithic Three-Layer 3-D Process for FPGA IEEE ELECTRON DEVICE LETTERS Zhang, Z., Chen, C., Crnogorac, F., Chen, S., Griffin, P. B., Pease, R. F., Plummer, J. D., Wong, S. S. 2013; 34 (8): 1044-1046

    View details for DOI 10.1109/LED.2013.2266111

    View details for Web of Science ID 000323911800037

  • Nanometer-Scale HfOx RRAM IEEE ELECTRON DEVICE LETTERS Zhang, Z., Wu, Y., Wong, H. P., Wong, S. S. 2013; 34 (8): 1005-1007

    View details for DOI 10.1109/LED.2013.2265404

    View details for Web of Science ID 000323911800024

  • Impact of III-V and Ge Devices on Circuit Performance IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS Park, J., Oh, S., Kim, S., Wong, H. P., Wong, S. S. 2013; 21 (7): 1189-1200

    View details for DOI 10.1109/TVLSI.2012.2210450

    View details for Web of Science ID 000320946200002

  • Effect of Wordline/Bitline Scaling on the Performance, Energy Consumption, and Reliability of Cross-Point Memory Array ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS Liang, J., Yeh, S., Wong, S. S., Wong, H. P. 2013; 9 (1)

    View details for DOI 10.1145/2422094.2422103

    View details for Web of Science ID 000315457200009

  • Trusted Integrated Chips Integrating Non-Volatile Memory with CMOS Provine, J., Wong, H., Wong, S., Mitra, S. 2013
  • First Demonstration of RRAM Patterned by Block Copolymer Self-Assembly IEEE International Electron Devices Meeting (IEDM) Wu, Y., Yi, H., Zhang, Z., Jiang, Z., Sohn, J., Wong, S., Wong, H. P. IEEE. 2013

    View details for Web of Science ID 000346509500136

  • Characterization of Geometric Leakage Current of GeO2 Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions IEEE ELECTRON DEVICE LETTERS Jung, W., Park, J., Lin, J. J., Wong, S., Saraswat, K. C. 2012; 33 (11): 1520-1522

    View details for DOI 10.1109/LED.2012.2211856

    View details for Web of Science ID 000310387100003

  • A superheterodyne receiver front-end with on-chip automatically Q-tuned notch filters ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING Chi, B., Wang, Z., Wong, S. S. 2012; 71 (3): 453-463

    View details for DOI 10.1007/s10470-011-9771-x

    View details for Web of Science ID 000304101200011

  • Nonvolatile 3D-FPGA with Monolithically Stacked RRAM-Based Configuration Memory Yang-Liauw, Y., Zhang, Z., Kim, W., El-Gamal, A., Wong, S. 2012
  • Scaling Challenges for the Cross-point Resistive Memory Array to Sub-10nm Node - An Interconnect Perspective 4th IEEE International Memory Workshop (IMW) Liang, J., Yeh, S., Wong, S. S., Wong, H. P. IEEE. 2012

    View details for Web of Science ID 000332985300029

  • Scaling Challenges for the Cross-point Resistive Memory Array to the Single-digit-nm Node – An Interconnect Perspective Liang, S., Yip, S., Wong, H., S., Wong, P. 2012
  • Array Architecture for a Nonvolatile 3-Dimensional Cross-Point Resistance-Change Memory IEEE JOURNAL OF SOLID-STATE CIRCUITS Ou, E., Wong, S. S. 2011; 46 (9): 2158-2170

    View details for DOI 10.1109/JSSC.2011.2148430

    View details for Web of Science ID 000294169700018

  • A 65 nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands MICROELECTRONICS JOURNAL Chi, B., Omid-Zohoor, K., Wang, Z., Wong, S. S. 2011; 42 (6): 855-862

    View details for DOI 10.1016/j.mejo.2011.04.004

    View details for Web of Science ID 000292408100005

  • A 60GHz Digitally Controlled RF Beamforming Array in 65nm CMOS with Off-Chip Antennas Lin, S., Ng, K., Wong, H., Luk, K., Wong, S., Poon, A. 2011
  • Forming-Free Nitrogen-Doped AlOx RRAM with Sub-μA Programming Current Kim, W., Park, S., I., Zhang, Z., Yang-Liauw, Y., Sekar, D., Wong, H., S. P. 2011
  • 3D Field Programmable Gate Array Yang-Liauw, Y., Crnororac, F., Chen, E., Jung, W., Kim, W., Park, S., Wong, S. S. 2011
  • Semiconductor crystal islands for three-dimensional integration 54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication Crnogorac, F., Wong, S., Pease, R. F. A V S AMER INST PHYSICS. 2010: C6P53-C6P58

    View details for DOI 10.1116/1.3511473

    View details for Web of Science ID 000285015200113

  • Leakage Current Analysis of Lateral p+/n Ge Based Diode Activated at Low Temperature for Three-Dimensional Integrated Circuit (3D-ICs) Jung, W., Park, J., Kuzum, D., Kim, W., Wong, S., Saraswat, K. 2010
  • Leakage Current Analysis of Lateral p+/n Ge Based Diode Activated at Low Temperature for Three-Dimensional Integrated Circuit (3D-ICs) Symposium on Processing, Materials, and Integration of Damascene and 3D Interconnects held during the 218th Meeting of the Electrochemical-Society Jung, W. S., Park, J., Kuzum, D., Kim, W., Wong, S., Saraswat, K. C. ELECTROCHEMICAL SOC INC. 2010: 35–39

    View details for DOI 10.1149/1.3501032

    View details for Web of Science ID 000315439100003

  • Optimization of Driver Preemphasis for On-Chip Interconnects IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Bai, Y., Wong, S. S. 2009; 56 (9): 2033-2041

    View details for DOI 10.1109/TCSI.2008.2011593

    View details for Web of Science ID 000269841000001

  • RESET Mechanism of TiOx Resistance-Change Memory Device IEEE ELECTRON DEVICE LETTERS Wang, W., Fujita, S., Wong, S. S. 2009; 30 (7): 733-735

    View details for DOI 10.1109/LED.2009.2021001

    View details for Web of Science ID 000267607900012

  • Elimination of Forming Process for TiOx Nonvolatile Memory Devices IEEE ELECTRON DEVICE LETTERS Wang, W., Fujita, S., Wong, S. S. 2009; 30 (7): 763-765

    View details for DOI 10.1109/LED.2009.2021003

    View details for Web of Science ID 000267607900022

  • Reduction of Inductive Crosstalk Using Quadrupole Inductors IEEE JOURNAL OF SOLID-STATE CIRCUITS Poon, A., Chang, A., Samavati, H., Wong, S. S. 2009; 44 (6): 1756-1764

    View details for DOI 10.1109/JSSC.2009.2020525

    View details for Web of Science ID 000266723400010

  • Pi Coil: A New Element for Bandwidth Extension IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS Lin, S., Huang, D., Wong, S. 2009; 56 (6): 454-458

    View details for DOI 10.1109/TCSII.2009.2020943

    View details for Web of Science ID 000267438500006

  • A 60-GHz LOW-NOISE AMPLIFIER FOR 60-GHz DUAL-CONVERSION RECEIVER MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Lin, Y., Wong, S. S. 2009; 51 (4): 885-891

    View details for DOI 10.1002/mop.24200

    View details for Web of Science ID 000264111800004

  • The Prospect of 3D-IC IEEE Custom Integrated Circuits Conference Wong, S. S., El Gamal, A. IEEE. 2009: 445–448

    View details for Web of Science ID 000275926300095

  • Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver 2009 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PROGRAM Lin, Y., Chang, T., Chen, C., Chen, C., Yang, H., Wong, S. S. 2009: 88-?

    View details for Web of Science ID 000271941200023

  • Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver Lin, Y., Chang, T., Chen, C., Chen, C., Yang, H., Wong, S. 2009
  • Performance Comparison between Capacitively Driven Low Swing and Conventional Interconnects for Cu and Carbon Nanotube Wire Technologies IEEE International Interconnect Technology Conference Koo, K., Kapur, P., Park, J., Noh, H., Wong, S. S., Saraswat, K. C. IEEE. 2009: 23–25

    View details for Web of Science ID 000272206600007

  • A High-Performance 3D-SRAM Architecture Wong, S., Nho, H. 2009
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    View details for DOI 10.1109/TCSII.2008.923411

    View details for Web of Science ID 000258950800016

  • High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts IEEE ELECTRON DEVICE LETTERS Feng, J., Thareja, G., Kobayashi, M., Chen, S., Poon, A., Bai, Y., Griffin, P. B., Wong, S. S., Nishi, Y., Plummer, J. D. 2008; 29 (7): 805-807

    View details for DOI 10.1109/LED.2008.2000613

    View details for Web of Science ID 000257626000047

  • A High-speed, Low-power 3D-SRAM Architecture IEEE Custom Integrated Circuits Conference Nho, H. H., Horowitz, M., Wong, S. S. IEEE. 2008: 201–204

    View details for Web of Science ID 000262643900045

  • A low-power V-band CMOS low-noise amplifier using current-sharing technique Yang, H., Lin, Y., Chen, C., Wong, S. S., IEEE IEEE. 2008: 964-+

    View details for DOI 10.1109/ISCAS.2008.4541580

    View details for Web of Science ID 000258532100245

  • A Low-Power V-Band CMOS Low Noise Amplifier using Current Sharing Technique Yang, H., Lin, Y., Chen, C., Wong, S. 2008
  • Monolithic 3D Integrated Circuits Wong, S., El-Gamal, A., Griffin, P., Nishi, Y., Pease, F., Plummer, J. 2008
  • An on-chip dipole antenna for millimeter-wave transmitters IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Park, P. H., Wong, S. S. IEEE. 2008: 571–574

    View details for Web of Science ID 000258748700143

  • Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films APPLIED PHYSICS LETTERS Reifenberg, J. P., Panzer, M. A., Kim, S., Gibby, A. M., Zhang, Y., Wong, S., Wong, H. P., Pop, E., Goodson, K. E. 2007; 91 (11)

    View details for DOI 10.1063/1.2784169

    View details for Web of Science ID 000249474000022

  • Closed-form RC and RLC delay models considering input rise time IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS Kim, S., Wong, S. S. 2007; 54 (9): 2001-2010

    View details for DOI 10.1109/TCSI.2007.902539

    View details for Web of Science ID 000249730800013

  • Statistical simulation methodology for sub100 nm memory design ELECTRONICS LETTERS Nho, H., Yoon, S., Wong, S., Jung, S. 2007; 43 (16): 869-870

    View details for DOI 10.1049/el:20070394

    View details for Web of Science ID 000248833900016

  • Performance benefits of monolithically stacked 3-D FPGA International Symposium on Field-Programmable Gate Arrays Lin, M., El Gamal, A., Lu, Y., Wong, S. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2007: 216–29

    View details for DOI 10.1109/TCAD.2006.887920

    View details for Web of Science ID 000243953000003

  • Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices IEEE ELECTRON DEVICE LETTERS Wang, Z., Griffin, P. B., McVittie, J., Wong, S., McIntyre, P. C., Nishi, Y. 2007; 28 (1): 14-16

    View details for DOI 10.1109/LED.2006.887640

    View details for Web of Science ID 000243280900006

  • A superheterodyne receiver front-end with on-chip automatically Q-tuned notch filters 2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS Chi, B., Wang, Z., Wong, S. S. 2007: 21-?

    View details for Web of Science ID 000248148800004

  • A Fully Integrated RF Front-End with Independent RX/TX Matching and +20dbm Output Power for WLAN Applications Chang, R., Weber, D., Lee, M., Su, D., Vleugels, K., Wong, S. 2007
  • Integrated transformer baluns for RF low noise and power amplifiers IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Gan, H., Wong, S. S. IEEE. 2006: 85–88

    View details for Web of Science ID 000239086300021

  • Nonvolatile SRAM Cell Wang, W., Gibby, A., Wang, Z., Fujita, S., Griffin, P., Nishi, Y., Wong, S. S. 2006
  • Performance Benefits of Monolithically Stacked 3D-FPGA Lin, M., El Gamal, A., Lu, Y., Wong, S. 2006
  • Multiphysics modeling and impact of thermal boundary resistance in phase change memory devices 10th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems Reifenberg, J., Pop, E., Gibby, A., Wong, S., Goodson, K. IEEE. 2006: 106–113

    View details for Web of Science ID 000243624500013

  • Integrated transformer baluns for RF low noise and power amplifiers IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Gan, H., Wong, S. S. IEEE. 2006: 69–72

    View details for Web of Science ID 000245137400018

  • Analysis and synthesis of on-chip spiral inductors IEEE TRANSACTIONS ON ELECTRON DEVICES Talwalkar, N. A., Yue, C. P., Wong, S. S. 2005; 52 (2): 176-182

    View details for DOI 10.1109/TED.2004.842535

    View details for Web of Science ID 000226481900007

  • Scalability of RF CMOS IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Yue, C. P., Wong, S. S. IEEE. 2005: 53–56

    View details for Web of Science ID 000230541500011

  • Studies of the driving force for room-temperature microstructure evolution in electroplated copper films JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Lee, H., Nix, W. D., Wong, S. S. 2004; 22 (5): 2369-2374

    View details for DOI 10.1116/1.1788680

    View details for Web of Science ID 000225048300022

  • Integrated CMOS transmit-receive switch using LC-Tuned substrate bias for 2.4-GHz and 5.2-GHz applications IEEE JOURNAL OF SOLID-STATE CIRCUITS Talwalkar, N. A., Yue, C. P., Gan, H. T., Wong, S. S. 2004; 39 (6): 863-870

    View details for DOI 10.1109/JSSC.2004.827809

    View details for Web of Science ID 000221803600001

  • Valuation of American options via basis functions IEEE TRANSACTIONS ON AUTOMATIC CONTROL Lai, T. L., Wong, S. P. 2004; 49 (3): 374-385

    View details for DOI 10.1109/TAC.2004.824466

    View details for Web of Science ID 000220256400006

  • Modeling and optimization of substrate resistance for RF-CMOS IEEE TRANSACTIONS ON ELECTRON DEVICES Chang, R. T., Yang, M. T., Ho, P. P., Wang, Y. J., Chia, Y. T., Liew, B. K., Yue, C. P., Wong, S. S. 2004; 51 (3): 421-426

    View details for DOI 10.1109/TED.2003.822586

    View details for Web of Science ID 000189247400019

  • A 10-GHz global clock distribution using coupled standing-wave oscillators IEEE International Solid-State Circuits Conference O'Mahony, F., Yue, C. P., Horowitz, M. A., Wong, S. S. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 1813–20

    View details for DOI 10.1109/JSSC.2003.818299

    View details for Web of Science ID 000186249100004

  • Near speed-of-light signaling over on-chip electrical interconnects Symposium on VLSI Circuits Chang, R. T., Talwalkar, N., Yue, C. P., Wong, S. S. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 834–38

    View details for DOI 10.1109/JSSC.2003.810060

    View details for Web of Science ID 000182517500021

  • Near speed-of-light velocities for on-chip - transmission of electrical signals SOLID STATE TECHNOLOGY Chang, R. T., Wong, S. S. 2003; 46 (5): 52-?

    View details for Web of Science ID 000182953800008

  • Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films JOURNAL OF APPLIED PHYSICS Lee, H., Wong, S. S., Lopatin, S. D. 2003; 93 (7): 3796-3804

    View details for DOI 10.1063/1.1555274

    View details for Web of Science ID 000181729600010

  • On the accuracy of return path assumption for loop inductance extraction for 0.1 mu m technology and beyond 4th IEEE International Symposium on Quality Electronic Design Kim, S. Y., Massoud, Y., Wong, S. S. IEEE COMPUTER SOC. 2003: 401–404

    View details for Web of Science ID 000182249900057

  • An Integrated 5.2GHz CMOS T/R Switch with LC-Tuned Substrate Bias Talwalkar, N., Yue, C., Wong, S. 2003
  • Mechanism for Early Failure in Cu Dual Damascene Structure Kim, D., Wong, S. 2003
  • 10GHz Clock Distribution Using Coupled Standing-Wave Oscillators O’Mahony, F., Yue, C., Wong, S. 2003
  • Compact modeling of high frequency phenomena for on-chip spiral inductors Nanotechnology Conference and Trade Show (Nanotech 2003) Talwalkar, N., Yue, C. P., Wong, S. S. COMPUTATIONAL PUBLICATIONS. 2003: 360–363

    View details for Web of Science ID 000223045900093

  • Design of a 10GHz clock distribution network using coupled standing-wave oscillators 40th Design Automation Conference O'Mahony, F., Yue, C. P., Horowitz, M. A., Wong, S. S. ASSOC COMPUTING MACHINERY. 2003: 682–687

    View details for Web of Science ID 000184080900125

  • High-frequency characterization of on-chip digital interconnects IEEE JOURNAL OF SOLID-STATE CIRCUITS Kleveland, B., Qi, X. N., Madden, L., Furusawa, T., DUTTON, R. W., Horowitz, M. A., Wong, S. S. 2002; 37 (6): 716-725

    View details for Web of Science ID 000175929500006

  • A 0-dB IL 2140 +/- 30 MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS Symposium on VLSI Circuits Soorapanth, T., Wong, S. S. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2002: 579–86

    View details for Web of Science ID 000175198900007

  • Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design (vol 36, pg 1480, 2001) IEEE JOURNAL OF SOLID-STATE CIRCUITS Kleveland, B., Diaz, C. H., Vook, D., Madden, L., Lee, T. H., Wong, S. S. 2002; 37 (2): 255-255

    View details for Web of Science ID 000173734300018

  • High Frequency Characterization of On-Chip Digital Interconnects IEEE Journal of Solid State Circuits Kleveland, B., Qi, X., Madden, L., Furusawa, T., Dutton, R., Horowitz, M., Wong, S. S. 2002; 37: 716-725
  • Near Speed-of-Light On-Chip Electrical Interconnect Chang, R., Yue, C., Wong, S. 2002
  • Recovery of open via after electromigration in Cu dual Damascene interconnect 40th Annual IEEE International Reliability Physics Symposium Sun, Y. H., Zhou, P., Kim, D. Y., Goodson, K. E., Wong, S. S. IEEE. 2002: 435–436

    View details for Web of Science ID 000176016400077

  • Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design IEEE JOURNAL OF SOLID-STATE CIRCUITS Kleveland, B., Diaz, C. H., Vook, D., Madden, L., Lee, T. H., Wong, S. S. 2001; 36 (10): 1480-1488

    View details for Web of Science ID 000171192400006

  • A 0dB-IL, 2140 +/- 30 MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS Symposium on VLSI Circuits Soorapanth, T., Wong, S. S. JAPAN SOCIETY APPLIED ELECTROMAGNETICS & MECHANICS. 2001: 15–18

    View details for Web of Science ID 000173132600005

  • Evidence of Dislocation Loops as a Driving Force for Self Annealing in Electroplated Cu Films Lee, H., Lopatin, S.., Marshall, A., Wong, S. 2001
  • CMOS RF integrated circuits at 5 GHz and beyond PROCEEDINGS OF THE IEEE Lee, T. H., Wong, S. S. 2000; 88 (10): 1560-1571

    View details for Web of Science ID 000165853300004

  • Distributed ESD protection for high-speed integrated circuits IEEE ELECTRON DEVICE LETTERS Kleveland, B., Maloney, T. J., Morgan, I., Madden, L., Lee, T. H., Wong, S. S. 2000; 21 (8): 390-392

    View details for Web of Science ID 000088465000007

  • Physical modeling of spiral inductors on silicon IEEE TRANSACTIONS ON ELECTRON DEVICES Yue, C. P., Wong, S. S. 2000; 47 (3): 560-568

    View details for Web of Science ID 000085766300011

  • Microanalysis of VLSI Interconnect Failure Modes under Short-Pulse Stress Conditions Banerjee, K., Mehrota, A., Hunter, W., Saraswat, K., Wong, S., Goodson, K. 2000
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    View details for Web of Science ID 000166421700020

  • Quantitative Projections of Reliability and Performance for Low-k/Cu Interconnect Systems Banerjee, K., Kim, D., Amerasekera, A., Hu, C., Goodson, K., Wong, S. 2000
  • On-Chip Inductance Modeling of VLSI Interconnects Qi, X., Kleveland, B., Yu, Z., Wong, S., Dutton, R. 2000
  • Correlation of Stress and Texture Evolution During Self- and Thermal Annealing of Electroplated Cu Films Lee, H., Lopatin, S., Wong, S. 2000
  • Kinetics of copper drift in low-kappa polymer interlevel dielectrics IEEE TRANSACTIONS ON ELECTRON DEVICES Loke, A. L., Wetzel, J. T., Townsend, P. H., Tanabe, T., Vrtis, R. N., Zussman, M. P., Kumar, D., Ryu, C., Wong, S. S. 1999; 46 (11): 2178-2187

    View details for Web of Science ID 000083256800003

  • A BICMOS active substrate probe-card technology for digital testing IEEE JOURNAL OF SOLID-STATE CIRCUITS Zargari, M., Leung, J., Wong, S. S., Wooley, B. A. 1999; 34 (8): 1118-1135

    View details for Web of Science ID 000081755500011

  • Microstructure and reliability of copper interconnects IEEE TRANSACTIONS ON ELECTRON DEVICES Ryu, C., Kwon, K. W., Loke, A. L., LEE, H., Nogami, T., Dubin, V. M., Kavari, R. A., Ray, G. W., Wong, S. S. 1999; 46 (6): 1113-1120

    View details for Web of Science ID 000080532400007

  • Ultra-low resistance, through-wafer via (TWV) technology and its applications in three dimensional structures on silicon 1998 International Conference on Solid State Devices and Materials (SSDM 98) Soh, H. T., Yue, C. P., McCarthy, A., Ryu, C., Lee, T. H., Wong, S. S., Quate, C. F. JAPAN SOC APPLIED PHYSICS. 1999: 2393–96

    View details for Web of Science ID 000082871300046

  • Barriers for copper interconnections SOLID STATE TECHNOLOGY Ryu, C. S., Lee, H. B., Kwon, K. W., Loke, A. L., Wong, S. S. 1999; 42 (4): 53-?

    View details for Web of Science ID 000079487500015

  • Monolithic CMOS Distributed Amplifier and Oscillator Kleveland, B., Diaz, C., Vook, D., Madden, L., Lee, T., Wong, S. 1999
  • A study on substrate effects of silicon-based RF passive components 1999 IEEE MTT-S International Microwave Symposium on the Magic Touch of Microwaves Yue, C. P., Wong, S. S. IEEE. 1999: 1625–1628

    View details for Web of Science ID 000081428500373

  • Kinetics of Copper Drift in Low-k Polymer Interlevel Dielectrics IEEE Transactions on Electron Devices Loke, A., Wetzel, J., Townsend, P., Tanabe, T., Vrtis, R., Zussman, M., Wong, S. S. 1999; 46: 2178-2187
  • A Study on Substrate Effects of Silicon-Based RF Passive Components Yue, C., Wong, S. 1999
  • Line Inductance Extraction and Modeling in a Real Chip with Power Grid Kleveland, B., Qi, X., Madden, L., Dutton, R., Wong, S. 1999
  • Evaluation of copper penetration in low-kappa polymer dielectrics by bias-temperature stress Symposium N on Advanced Interconnects and Contacts, at the 1999 MRS Spring Meeting Loke, A. L., Wong, S. S., Talwalkar, N. A., Wetzel, J. T., Townsend, P. H., Tanabe, T., Vrtis, R. N., Zussman, M. P., Kumar, D. MATERIALS RESEARCH SOCIETY. 1999: 535–549

    View details for Web of Science ID 000083461300076

  • Effects of Plating Current Density and Solution Additive on the Microstructure and Recrystallization Rate of Electroplated Copper Films Lee, H., Lopatin, S., Kim, D., Dubin, V., Wong, S. 1999
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    View details for Web of Science ID 000085482500021

  • Lateral IGBT in thin SOI for high voltage, high speed power IC IEEE TRANSACTIONS ON ELECTRON DEVICES Leung, Y. K., Paul, A. K., Plummer, J. D., Wong, S. S. 1998; 45 (10): 2251-2254

    View details for Web of Science ID 000076221300024

  • Electrical leakage at low-K polyimide/TEOS interface IEEE ELECTRON DEVICE LETTERS Loke, A. L., Wetzel, J. T., Stankus, J. J., Angyal, M. S., Mowry, B. K., Wong, S. S. 1998; 19 (6): 177-179

    View details for Web of Science ID 000073727100001

  • On-chip spiral inductors with patterned ground shields for Si-based RF IC's 1997 Symposium on VLSI Circuits Yue, C. P., Wong, S. S. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1998: 743–52

    View details for Web of Science ID 000073300400010

  • SOI MOSFET with buried body strap by wafer bonding IEEE TRANSACTIONS ON ELECTRON DEVICES Kuehne, S. C., Chan, A. B., Nguyen, C. T., Wong, S. S. 1998; 45 (5): 1084-1091

    View details for Web of Science ID 000073176500013

  • Temperature-dependent thermal conductivity of single-crystal silicon layers in SOI substrates IMECE Meeting Asheghi, M., Touzelbaev, M. N., Goodson, K. E., Leung, Y. K., Wong, S. S. ASME-AMER SOC MECHANICAL ENG. 1998: 30–36

    View details for Web of Science ID 000072527000003

  • Electrical reliability of Cu and low-K dielectric integration 4th Symposium on Low Dielectric Constant Materials for Microelectronics Applications Wong, S. S., Loke, A. L., Wetzel, J. T., Townsend, P. H., Vrtis, R. N., Zussman, M. P. MATERIALS RESEARCH SOCIETY. 1998: 317–327

    View details for Web of Science ID 000077020800041

  • Microstructure and mechanical properties of electroplated Cu films for Damascene ULSI metallization Symposium on Thin-Films - Stresses and Mechanical Properties VII at the MRS Fall Meeting Dubin, V. M., Morales, G., Ryu, C., Wong, S. S. MATERIALS RESEARCH SOCIETY. 1998: 137–142

    View details for Web of Science ID 000075849800019

  • Copper electroplating for damascene ULSI interconnects Symposium on Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits Dubin, V. M., Lopatin, S., Chen, S., Cheung, R., Ryu, C., Wong, S. S. MATERIALS RESEARCH SOCIETY. 1998: 275–280

    View details for Web of Science ID 000077430000045

  • Modeling and Characterization of On-Chip Transformer Mohan, S., Yue, C., Hershenson, M., Mar, Wong, S., Lee, T. 1998
  • Effect of Seed Layer Texture and Surface Roughness on the Microstructure of Electroplated Copper Film Lee, H., Lopatin, S., Nogami, T., Wong, S. 1998
  • Copper Drift in Low-K Polymer Dielectrics for ULSI Metallization Loke, A., Wetzel, J., Ryu, C., Wong, S. 1998
  • Electromigration of Submicron Damascene Copper Ryu, C., Kwon, K., Loke, A., Dubin, V., Kavari, R., Ray, G., Wong, S. S. 1998
  • Copper Electroplating for Damascene ULSI Interconnects Dubin, V., Chen, S., Cheung, R., Ryu, C., Wong, S. 1998
  • A Novel Crosstalk Isolation Structure for Bulk CMOS Power IC’s IEEE Transactions on Electron Devices Chan, W., Sin, J., Wong, S. 1998; 45: 1580-1586
  • Lateral Emitter Controlled Thyristor (LECT) on SOI Zhao, Y., Huang, A., Leung, Y., Wong, S. 1998
  • 50 Ghz Interconnect Design in Standard Silicon Technology Kleveland, B., Wong, S., Lee, T. 1998
  • Analysis and Optimization of Accumulation-Mode Varactor for RF ICs Soorapanth, T., Yue, C., Shaeffer, D., Lee, T., Wong, S. 1998
  • Copper Drift in Low-K Polymer Dielectrics for ULSI Metallization Loke, A., Wetzel, J., Ryu, C., Lee, W., Wong, S. 1998
  • Evidence of heteroepitaxial growth of copper on beta-tantalum APPLIED PHYSICS LETTERS Kwon, K. V., Ryu, C., Sinclair, R., Wong, S. S. 1997; 71 (21): 3069-3071

    View details for Web of Science ID A1997YG83400013

  • Phonon-boundary scattering in thin silicon layers APPLIED PHYSICS LETTERS Asheghi, M., Leung, Y. K., Wong, S. S., Goodson, K. E. 1997; 71 (13): 1798-1800

    View details for Web of Science ID A1997XY99300018

  • Investigation of aluminum nitride grown by metal-organic chemical-vapor deposition on silicon JOURNAL OF APPLIED PHYSICS Zetterling, C. M., Ostling, M., Wongchotigul, K., Spencer, M. G., Tang, X., Harris, C. I., Nordell, N., Wong, S. S. 1997; 82 (6): 2990-2995

    View details for Web of Science ID A1997XX99600040

  • Heating mechanisms of LDMOS and LIGBT in ultrathin SOI IEEE ELECTRON DEVICE LETTERS Leung, Y. K., Paul, A. K., Goodson, K. E., Plummer, J. D., Wong, S. S. 1997; 18 (9): 414-416

    View details for Web of Science ID A1997XR89300004

  • Short-timescale thermal mapping of semiconductor devices IEEE ELECTRON DEVICE LETTERS Ju, Y. S., KADING, O. W., Leung, Y. K., Wong, S. S., Goodson, K. E. 1997; 18 (5): 169-171

    View details for Web of Science ID A1997WU99600001

  • Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers IEEE JOURNAL OF QUANTUM ELECTRONICS Biellak, S. A., Fanning, G., Sun, Y., Wong, S. S., Siegman, A. E. 1997; 33 (2): 219-230

    View details for Web of Science ID A1997WD89400012

  • Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI IEEE ELECTRON DEVICE LETTERS Leung, Y. K., Kuehne, S. C., Huang, V. S., Nguyen, C. T., Paul, A. K., Plummer, J. D., Wong, S. S. 1997; 18 (1): 13-15

    View details for Web of Science ID A1997VZ12900005

  • Microstructure and Mechanical properties of Electroplated Cu Films for Damascene ULSI Metallization Dubin, V., Morales, G., Ryu, C., Wong, S. 1997
  • Characteristics of Ta as an Underlayer for Cu Interconnect Kwon, K., Lee, H., Ryu, C., Sinclair, R., Wong, S. 1997
  • A Novel Methodology for Reliability Studies in Fully Depleted SOI MOSFETs Banna, S., Chan, P., Wong, S., Fung, S., Ko, P. 1997
  • Electrical Stability of Low-K Polyimide/TEOS Interface Loke, A., Wetzel, J., Stankus, J., Angyal, M., Gregory, R., Abramowitz, P., Wong, S. S. 1997
  • Polished TFT's: Surface Roughness Reduction and Its Correlation to Device Performance Improvement IEEE Transactions on Electron Devices Chan, A., Nguyen, C., Ko, P., Chan, S., Wong, S. 1997; 44: 455-463
  • Electrical extraction of the in-plane dielectric constant of fluorinated polyimide Symposium on Low-Dielectric Constant Materials III, at the 1997 MRS Spring Meeting Loke, A. L., Wetzel, J. T., Stankus, J. J., Wong, S. S. MATERIALS RESEARCH SOCIETY. 1997: 129–134

    View details for Web of Science ID 000072112700018

  • Pnonon-Boundary Scattering in Thin Silicon Layers Applied Physics Letters Asheghi, M., leung, Y., Wong, S., Goodson, K. 1997; 71: 1798-1800
  • A Quasi-Stadium Semiconductor Laser Fukishima, Beillak, S., A., Sun, Y., Fanning, C., G., Cheng, Y., Wong, S. 1997
  • On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF IC’s Yue, C., Wong, S. 1997
  • Effect of Texture on the Electromigration of CVD Copper Ryu, C., Loke, A., Nogami, T., Wong, S. 1997
  • Evidence of reduced maximum E-field in Quasi-SOI MOSFET's IEEE TRANSACTIONS ON ELECTRON DEVICES Ng, C. M., Nguyen, C. T., Kuehne, S. C., Wong, S. S. 1996; 43 (12): 2308-2310

    View details for Web of Science ID A1996VU87900037

  • Kinetics of copper drift in PECVD dielectrics IEEE ELECTRON DEVICE LETTERS Loke, A. L., Ryu, C., Yue, C. P., CHO, J. S., Wong, S. S. 1996; 17 (12): 549-551

    View details for Web of Science ID A1996VX16300001

  • Formation and high frequency CV-measurements of aluminum aluminum nitride 6H silicon carbide structures Symposium on III-Nitride, SiC and Diamond Materials for Electronic Devices Zetterling, C. M., Wongchotigul, K., Spencer, M. G., Harris, C. I., Wong, S. S., Ostling, M. MATERIALS RESEARCH SOCIETY. 1996: 667–672

    View details for Web of Science ID A1996BG72B00103

  • Lateral IGBT on Thin SOI for High-Speed Power IC Applications Leung, Y., Kuehne, S., Huang, V., Nguyen, C., Paul, A., Plummer, J., Wong, S. S. 1996
  • Deep Sub-Micron SOI MOSFET with Buried Body Strap Kuehne, S., Chan, A., Nguyen, C., Wong, S. 1996
  • Optimizing Polysilicon Thin-Film Transistor Performance with Chemical-Mechanical Polishing and Hydrogenation IEEE Electron Device Letters Chan, A., Nguyen, C., Ko, P., Wong, M., Kumar, A., Sin, J. 1996; 17: 518-520
  • Active Substrate Membrane Probe Card Leung, J., Zargari, M., Wooley, B., Wong, S. 1996
  • The Combined Effects of Chemical-Mechanical Polishing and Hydrogenation on Poly-Si TFT’s Chan, A., Nguyen, C., Ko, P., Wong, S. 1996
  • CMOS Latchup Characterization for LDMOS/LIGBT Power Integrated Circuits Chan, W., Sin, J., Mok, P., Wong, S. 1996
  • A Power IC technology with Excellent Cross-Talk Isolation IEEE Electron Device Letters Chan, W., Sin, J., Mok, P., Wong, S. 1996; 17: 467-469
  • A BICMOS active substrate probe card technology for digital testing 1996 IEEE International Solid-State Circuits Conference Zargari, M., Leung, J. T., Wong, S. S., Wooley, B. A. I E E E. 1996: 308–309

    View details for Web of Science ID A1996BF43W00124

  • Temperature-Dependent Thermal Conductivity of Single Crystal Silicon Layers in SOI Substrates Asheghi, M., Touzelbaev, M., Goodson, K., Leung, Y., Wong, S. 1996
  • Grain Structure of CVD Copper Films Ryu, C., Loke, A., Wong, S. 1996
  • A physical model for planar spiral inductors on silicon 1996 International Electron Devices Meeting Yue, C. P., Ryu, C. S., Lau, J., Lee, T. H., Wong, S. S. IEEE. 1996: 155–158

    View details for Web of Science ID A1996BG98F00034

  • High voltage LDMOS transistors in sub-micron SOI films 8th International Symposium on Power Semiconductor Devices and PCs (ISPSD 96) Paul, A. K., Leung, Y. K., Plummer, J. D., Wong, S. S., Kuehne, S. C., Huang, V. S., Nguyen, C. T. I E E E. 1996: 89–92

    View details for Web of Science ID A1996BF73Z00012

  • LATERAL-MODE BEHAVIOR OF REACTIVE-ION-ETCHED STABLE-RESONATOR SEMICONDUCTOR-LASERS JOURNAL OF APPLIED PHYSICS BIELLAK, S. A., SUN, Y., WONG, S. S., SIEGMAN, A. E. 1995; 78 (6): 4294–96

    View details for DOI 10.1063/1.359831

    View details for Web of Science ID A1995RU95300115

  • Monolithic Stable-Resonator Semiconductor Laser Biellak, S., Sun, Y., Wong, S., Siegman, A. 1995
  • Self-heating effect in lateral DMOS on SOI 7th International Symposium on Power Semiconductor Devices and ICS (ISPSD 95) Leung, Y. K., Suzuki, Y., Goodson, K. E., Wong, S. S. I E E E. 1995: 136–140

    View details for Web of Science ID A1995BD72A00025

  • Evidence of Reduced Maximum Lateral E-Field in Quasi-SOI MOSFETs Ng, C., Nguyen, C., Wong, S. 1995
  • Active substrate membrane probe card 1995 International Electron Devices Meeting Leung, J., Zargari, M., Wooley, B. A., Wong, S. S. IEEE. 1995: 709–712

    View details for Web of Science ID A1995BF10D00160

  • Electrical and Thermal Study of Membrane Multi-Chip Module Systems Cheng, W., Wong, S. 1995
  • A Micromachined Array Probe Card - Characterization IEEE Transactions on Components, Packaging and Manufacturing Technology Part B: Advanced Packaging Beiley, M., Leung, J., Wong, S. 1995; 18: 184-191
  • Non-Radial Non-Uniformity in Chemo-Mechanical Polishing Huang, V., Nguyen, C., Chan, A., Ling, C., Wong, S. 1995
  • A Micromachined Array Probe Card - Fabrication Process IEEE Transactions on Components, Packaging and Manufacturing Technology Part B: Advanced Packaging Beiley, M., Leung, J., Wong, S. 1995; 18: 179-183
  • An Effective Cross-Talk Isolation Structure for Power IC Applications Chan, W., Sin, J., Wong, S. 1995
  • Reliability of Chemically Vapor Deposited (CVD) Copper Interconnections Journal of Materials Chemistry and Physics Wong, S., Cho, J., Kang, H., Ryu, C. 1995; 41: 229-233
  • Influence of Parasitic Capacitances on Switching Characteristics of SOI-LDMOSs Suzuki, Y., Leung, Y., Wong, S. 1995
  • Contact Technology for High Performance Scalable BiCMOS on TFSOI IEEE Electron Device Letters Racanelli, M., Huang, W., Kuehne, S., Foerstner, J., Wong, S., Hwang, B. 1995; 16: 424-426
  • Lateral Mode Behavior of Reactive-Ion-Etched Stable-Resonator Semiconductor Lasers Journal of Applied Physics Biellak, S., Sun, Y., Wong, S., Siegman, A. 1995; 78: 4294-4296
  • Cross-Talk Prevention for Power Integrated Circuits Chan, W., Wong, F., Sin, J., Wong, S. 1995
  • THE EFFECTS OF IMPACT IONIZATION ON THE OPERATION OF NEIGHBORING DEVICES AND CIRCUITS IEEE TRANSACTIONS ON ELECTRON DEVICES Sakui, K., Wong, S. S., Wooley, B. A. 1994; 41 (9): 1603-1607

    View details for Web of Science ID A1994PE02600015

  • MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS IEEE ELECTRON DEVICE LETTERS Nguyen, C. T., VERPLOEG, E. P., Kuehne, S. C., Plummer, J. D., Wong, S. S., Renteln, P. 1994; 15 (4): 132-134

    View details for Web of Science ID A1994NK10700006

  • Parasitic Bipolar Gain in Fully Depleted n-Channel SOI MOSFET’s IEEE Transactions on Electron Devices Ploeg, E., Ver, Nguyen, C., Wong, S., Plummer, J. 1994; 41: 970-977
  • Application of Selective Epitaxial Silicon and Chemo-Mechanical Polishing to Bipolar Transistors IEEE Transactions on Electron Devices Nguyen, C., Kuehne, S., Wong, S., Garling, L., Drowley, C. 1994; 41: 2343-2350
  • Microstructure of CVD Copper on TiW Ryu, C., Lee, H., Ostling, M., Wong, S. 1994
  • High-Power Diffraction-Limited Reactive-Ion-Etched Unstable-Resonator Diode Lasers Biellak, S., Fanning, G., Sun, Y., Wong, S., Siegman, A. 1994
  • ELECTROLESS CU FOR VLSI MRS BULLETIN CHO, J. S., Kang, H. K., Wong, S. S., SHACHAMDIAMAND, Y. 1993; 18 (6): 31-38

    View details for Web of Science ID A1993LH30400003

  • SERIAL-PARALLEL FFT ARRAY PROCESSOR IEEE TRANSACTIONS ON SIGNAL PROCESSING YOU, J. H., WONG, S. S. 1993; 41 (3): 1472–76

    View details for DOI 10.1109/78.205760

    View details for Web of Science ID A1993KU54500051

  • A Selective CVD Tungsten-Strapped Polysilicon Local Interconnection Technology IEEE Transactions on Electron Devices Lee, V., Kuehne, S., Nguyen, C., Beiley, M., Wong, S. 1993; 40: 1223-1230
  • THE EFFECTS OF HOT CARRIERS GENERATION ON THE OPERATION OF NEIGHBORING DEVICES AND CIRCUITS 1993 SYMP ON VERY-LARGE-SCALE-INTEGRATION ( VLSI ) TECHNOLOGY Sakui, K., Wong, S. S., Wooley, B. A. JAPAN SOC APPLIED PHYSICS. 1993: 11–12

    View details for Web of Science ID A1993BZ20V00003

  • Development of an Active Membrane Probe Card Leung, J., Beiley, M., Zargari, M., Wong, S. 1993
  • Membrane Multi-Chip Module Technology on Si Cheng, W., Beiley, M., Wong, S. 1993
  • First Direct Beta Measurement for Parasitic Lateral Bipolar Transistors in Fully Depleted SOI MOSFET’s Ploeg, E., Ver, Nguyen, C., Kistler, N., Wong, S., Woo, J., Plummer, J. 1993
  • Reliability of CVD Cu Buried Interconnections Cho, J., Kang, H., Ryu, C., Wong, S. 1993
  • The Effects of Hot Carriers Generation on the Operation of Neighboring Devices and Circuits Sakui, K., Wong, S., Wooley, B. 1993
  • Serial-Parallel FFT Array Processor IEEE Transactions on Signal Processing You, J., Wong, S. 1993; 41: 1472-1476
  • Grain Structure and Electromigration Properties of CVD Cu Metallization Kang, H., Asano, I., Ryu, C., Wong, S., Norman, J. 1993
  • CVD Cu Interconnections for VLSI Metallization Cho, J., Kang, H., Gross, M., Wong, S. 1993
  • ELECTROMIGRATION PROPERTIES OF ELECTROLESS PLATED CU METALLIZATION IEEE ELECTRON DEVICE LETTERS Kang, H. K., CHO, J. S., Wong, S. S. 1992; 13 (9): 448-450

    View details for Web of Science ID A1992JJ71900002

  • MONOLITHIC ALGAAS-GAAS SINGLE QUANTUM-WELL RIDGE LASERS FABRICATED WITH DRY-ETCHED FACETS AND RIDGES IEEE JOURNAL OF QUANTUM ELECTRONICS BEHFARRAD, A., WONG, S. S. 1992; 28 (5): 1227–31

    View details for DOI 10.1109/3.135259

    View details for Web of Science ID A1992HT02300001

  • ALGAAS/GAAS-BASED TRIANGULAR-SHAPED RING RIDGE LASERS APPLIED PHYSICS LETTERS BEHFARRAD, A., BALLANTYNE, J. M., WONG, S. S. 1992; 60 (14): 1658–60

    View details for DOI 10.1063/1.107228

    View details for Web of Science ID A1992HM46600004

  • A PLANAR INTERCONNECTION TECHNOLOGY UTILIZING THE SELECTIVE DEPOSITION OF TUNGSTEN - PROCESS CHARACTERIZATION IEEE TRANSACTIONS ON ELECTRON DEVICES THOMAS, D. C., BEHFARRAD, A., COMEAU, G. L., SKVARLA, M. J., WONG, S. S. 1992; 39 (4): 893–900

    View details for Web of Science ID A1992HH95100020

  • A PLANAR INTERCONNECTION TECHNOLOGY UTILIZING THE SELECTIVE DEPOSITION OF TUNGSTEN - MULTILEVEL IMPLEMENTATION IEEE TRANSACTIONS ON ELECTRON DEVICES THOMAS, D. C., WONG, S. S. 1992; 39 (4): 901–7

    View details for DOI 10.1109/16.127480

    View details for Web of Science ID A1992HH95100021

  • A Planar Interconnection Technology Utilizing the Selective Deposition of Tungsten – Multilevel Implementation IEEE Transactions on Electron Devices Thomas, D., Wong, S. 1992; 39: 901-907
  • Electromigration Properties of Electroless and CVD Cu Metallization Kang, H., Cho, J., Asano, I., Wong, S. 1992
  • Array probe card Beiley, M., Ichishita, F., Nguyen, C., Wong, S. 1992
  • Micro-Machined Array Probe Card Beiley, M., Wong, S. 1992
  • Complementary Lateral Bipolar Transistor Action in a CMOS Technology IEEE Electron Device Letters Verdonckt-Vandebroek, S., You, J., Woo, J., Wong, S. 1992; 13: 312-313
  • CVD Cu Interconnections for ULSI Cho, J., Kang, H., Asano, I., Wong, S. 1992
  • Monolithic Integration of GaAs and Si Bipolar Devices for Optical Interconnect Systems Nasserbakht, G., Adkisson, J., Wooley, B., Harris, J., Kamins, T., Wong, S. 1992
  • Measurement of Lateral Dopant Diffusion in Thin Silicide Layers IEEE Transactions on Electron Devices Chu, C., Saraswat, K., Wong, S. 1992; 60: 2333-2340
  • Electromigration Performance of Electroless Plated Copper / Pd-Silicide Metallization IEEE Electron Device Letters Tao, J., Cheung, N., Hu, C., Kang, H., Wong, S. 1992; 13: 433-435
  • AlGaAs/GaAs-Based Triangular-Shaped Ring Ridge Laser Applied Physics Letters Behfar-Rad, A., Ballantyne, J., Wong, S. 1992; 60: 1658-1660
  • Quasi-SOI MOSFETs Using Selective Epitaxy and Polishing Nguyen, C., Kuehne, S., Wong, S., Renteln, P. 1992
  • Monolithic AlGaAs/GaAs Single Quantum Well Ridge Lasers Fabricated with Dry-Etched Facets and Ridges IEEE Journal of Quantum Electronics Behfar-Rad, A., Wong, S. 1992; 28: 1227-1231
  • A Planar Interconnection Technology Utilizing the Selective Deposition of Tungsten – Process Characterization IEEE Transactions on Electron Devices Thomas, D., Behfar-Rad, A., Comeau, G., Skvarla, M., Wong, S. 1992; 39: 893-900
  • Al-Cu Interconnection Formed by Diffusing Selectively Deposited CVD Cu into Patterned Al Lines Kang, H., Asano, I., Wong, S., Norman, J. 1992
  • Single-Poly Bipolar Transistor with Selective Epitaxial Silicon and Chemo-Mechanical Polishing Nguyen, C., Kuehne, S., Wong, S. 1992
  • HIGH-GAIN LATERAL BIPOLAR ACTION IN A MOSFET STRUCTURE IEEE TRANSACTIONS ON ELECTRON DEVICES VERDONCKTVANDEBROEK, S., Wong, S. S., Woo, J. C., Ko, P. K. 1991; 38 (11): 2487-2496

    View details for Web of Science ID A1991GJ60100013

  • ETCHED-FACET ALGAAS TRIANGULAR-SHAPED RING LASERS WITH OUTPUT COUPLING APPLIED PHYSICS LETTERS BEHFARRAD, A., BALLANTYNE, J. M., WONG, S. S. 1991; 59 (12): 1395–97

    View details for DOI 10.1063/1.105317

    View details for Web of Science ID A1991GF29500001

  • Implantation to Suppress Parasitic Bipolar Action in CMOS IEEE Transactions on Electron Devices Ratanaphanyarat, S., Renteln, P., Drowley, C., Wong, S. 1991; 38: 355-364
  • Copper Interconnection with Tungsten Cladding for ULSI Cho, J., Kang, H., Beiley, M., Wong, S., Ting, C. 1991
  • Series Resistance of Devices with Submicrometer Source/Drain Areas IEEE Electron Device Letters Lee, V., Biellak, S., Cho, J., Wong, S. 1991; 12: 664-666
  • Technology Limitations for N+/P+ Polycide Gate CMOS Due to Lateral Dopant Diffusion in Silicide/Polysilicon Layers IEEE Electron Device Letters Chu, C., Chin, G., Saraswat, K., Wong, S., Dutton, R. 1991; 12: 696-698
  • Etched-Facet AlGaAs Triangular-Shaped Ring Lasers with Output Coupling Applied Physics Letters Behfar-Rad, A., Ballantyne, J., Wong, S. 1991; 59: 1395-1397
  • HOT-ELECTRON-INDUCED MINORITY-CARRIER GENERATION IN BIPOLAR JUNCTION TRANSISTORS IEEE ELECTRON DEVICE LETTERS ISHIUCHI, H., TAMBA, N., SHOTT, J. D., KNORR, C. J., WONG, S. S. 1990; 11 (11): 490–92

    View details for DOI 10.1109/55.63010

    View details for Web of Science ID A1990EE94500003

  • A SELF-ALIGNED NITROGEN IMPLANTATION PROCESS (SNIP) TO MINIMIZE FIELD OXIDE THINNING EFFECT IN SUBMICROMETER LOCOS IEEE TRANSACTIONS ON ELECTRON DEVICES Ratanaphanyarat, S., Kuang, J. B., Wong, S. S. 1990; 37 (9): 1948-1958

    View details for Web of Science ID A1990DU61600003

  • EFFECT OF CLADDING LAYER THICKNESS ON THE PERFORMANCE OF GAAS-ALGAAS GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM-WELL LASERS IEEE JOURNAL OF QUANTUM ELECTRONICS BEHFARRAD, A., SHEALY, CHINN, WONG, S. S. 1990; 26 (9): 1476–80

    View details for DOI 10.1109/3.102624

    View details for Web of Science ID A1990EK41000006

  • Characterization of Lateral Bipolar Transistor Structure Theodore, D., Verdonckt-Vandebroek, S., Carter, C., Wong, S. 1990
  • A COMPLEMENTARY HIGH-CURRENT GAIN TRANSISTOR FOR USE IN A CMOS COMPATIBLE TECHNOLOGY 1990 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING VERDONCKTVANDEBROEK, S., Woo, J. C., Wong, S. S. I E E E, ELECTRON DEVICES SOC & RELIABILITY GROUP. 1990: 82–85

    View details for Web of Science ID A1990BS57Q00014

  • Traveling-Wave Operation in a Triangular-Shaped Monolithic Semiconductor Ring Ridge Laser Behfar-Rad, A., Wong, S., Ballantyne, J. 1990
  • A High Performance Single Chip FFT Array Processor for Wafer Scale Integration You, J., Wong, S. 1990
  • A Complementary High Gain Transistor for Use in a CMOS Compatible Technology Verdonckt-Vandebroek, S., Woo, J., Wong, S. 1990
  • Fully Monolithic Self-Aligned GaAs/AlGaAs Single Quantum Well Ridge Laser Behfar-Rad, A., Wong, S. 1990
  • Hot-Electron-Induced Minority-Carrier Generation in Bipolar Junction Transistors IEEE Electron Device Letters Ishiuchi, H., Tamba, N., Shott, J., Knorr, C., Wong, S. 1990; 11: 490-492
  • A Self-Aligned Nitrogen Implantation Process (SNIP) to Minimize Field Oxide Thinning Effect in Submicrometer LOCOS IEEE Transactions on Electron Devices Ratanaphanyarat, S., Wong, S. 1990; 37: 1948-1958
  • Characterization of Lateral Dopant Diffusion in Silicides Chu, C., Saraswat, K., Wong, S. 1990
  • Effect of Cladding Layer Thickness on the Performance of GaAs-AlGaAs Graded Index Separate Confinement Heterostructure Single Quantum-Well Lasers IEEE Journal of Quantum Electronics Behfar-Rad, J., Shealy, Chinn, S., Wong, S. 1990; 26: 1476-1480
  • Characterization of Lateral Dopant Diffusion in Silicides Chu, C., Saraswat, K., Wong, S. 1990
  • EFFICIENT COUPLING OF OPTICAL FIBER TO SILICON PHOTODIODE IEEE ELECTRON DEVICE LETTERS BALTUCH, O., LEE, WONG, S. 1989; 10 (6): 255–56

    View details for DOI 10.1109/55.31738

    View details for Web of Science ID A1989U751800005

  • Efficient Coupling of Optical Fiber to Silicon Photodiode IEEE Electron Device Letters Baltuch, O., Lee, V., Wong, S. 1989; 10: 255-256
  • Hot Electron Induced Minority Carrier Generation in Bipolar Junction Transistors Ishiuchi, H., Tamba, N., Shott, J., Knorr, C., Wong, S. 1989
  • Masking Considerations in Chemically Assisted Ion Beam Etching of GaAs/AlGaAs Laser Structures Journal of Electrochemical Society Behfar-Rad, A., Wong, S., Davis, R., Wolf, E. 1989; 136: 779-782
  • A Framework to Evaluate Technology and Device Design Enhancements for MOS Integrated Circuits IEEE Journal of Solid-State Circuits Sodini, C., Wong, S., Ko, P. 1989; 24: 118-127
  • Lateral NPN Bipolar Transistor for High Current Gain Applications at Reduced Temperatures Woo, J., Wong, S., Verdonckt-Vandebroek, S., Ko, P., Terrill, K., Vasudev, P. 1989
  • Rectangular and L-Shaped GaAs/AlGaAs Lasers with Very High Quality Etched Facets Applied Physics Letters Behfar-Rad, A., Wong, S., Ballantyne, J., Soltz, B., Harding, C. 1989; 54: 493-495
  • A Multilevel Tungsten Interconnect Technology Thomas, D., Wong, S., Dinsmore, D., Soave, R. 1988
  • A Triangular-Shaped GaAs/AlGaAs Laser Behfar-Rad, A., Wong, S. 1988
  • A Selective CVD Tungsten Local Interconnect Technology Lee, V., Verdonckt, S., Wong, S. 1988
  • High Gain Lateral Bipolar Transistor Verdonckt, S., Wong, S., Ko, P. 1988
  • Multilevel Tungsten Interconnect Technology Wong, S., Thomas, D., Verdonckt, S. 1988
  • HPSAC – A Silicided Amorphous-Silicon Contact and Interconnect Technology for VLSI IEEE Transactions on Electron Devices Wong, S., Chen, D., Merchant, P., Cass, T., Amano, J., Chiu, K. 1987; 34: 587-592
  • Semiconductor Lasers with Very High Quality Etched Facets Behfar-Rad, A., Wong, S. 1987
  • Oxygen Implantation for Improved CMOS Latchup Immunity Ratanaphanyarat, S., Verdonckt, S., Wong, S., Drowley, C. 1987
  • Oxygen Implantation for Internal Gettering and Reducing Carrier Lifetime Applied Physics Letters Weiner, D., Wong, S., Drowley, C. 1987; 50: 986-988
  • Oxygen Implantation for Lifetime Control Weiner, D., Wong, S., Drowley, C. 1986
  • A Planar Multi-Level Tungsten Interconnect Technology Thomas, D., Wong, S. 1986
  • Specific Contact Resistivity of TiSi2 to p+ and n+ Junctions IEEE Electron Device Letters Hui, J., Wong, S., Moll, J. 1985; 6: 479-481
  • Anodic Nitridation of Silicon and Silicon Dioxide IEEE Transactions on Electron Devices Wong, S., Oldham, W. 1985; 32: 978-982
  • CMOS Well Drive-In in NH3 for Reduced Lateral Diffusion and Heat Cycle IEEE Electron Device Letters Wong, S., Ekstedt, T. 1985; 6: 659-661
  • CMOS Well Drive-In in NH3 for Reduced Lateral Diffusion and Heat Cycle Wong, S., Ekstedt, T. 1985
  • Anodic Nitridation of Silicon-Dioxide Wong, S., Oldham, W. 1984
  • Enhancement of Hot-Electron Currents in Graded-Gate-Oxide (GGO) MOSFETs Ko, P., Tam, S., Hu, C., Wong, S., Sodini, C. 1984
  • Elevated Source/Drain MOSFET Wong, S., Bradbury, D., Chen, D., Chiu, K. 1984
  • A New Device Interconnect Scheme for Sub-Micron VLSI Chen, D., Wong, S., Voorde, P., Vande, Merchant, P., Cass, T., Amano, J. 1984
  • A Multiwafer Plasma System for Anodic Nitridation and Oxidation IEEE Electron Device Letters Wong, S., Oldham, W. 1984; 5: 175-177
  • A JMOS Transistor Fabricated with 100-Å Low-Pressure Nitrided-Oxide Gate Dielectric IEEE Transactions on Electron Devices Sodini, C., Wong, S., Ekstedt, T., Grinolds, H., Oldham, W. 1984; 31: 17-21
  • Low Pressure, Nitrided-Oxide as a Thin Gate Dielectric for MOSFETs Journal of Electrochemical Society Wong, S., Sodini, C., Ekstedt, T., Grinolds, H., Jackson, K., Kwan, S. 1983; 130: 1139-1144
  • Anodic Si3N4 Grown in a New Plasma Reactor Wong, S., Oldham, W., Grinolds, H. 1983
  • Composition and Electrical Properties of Nitrided-Oxide and Re-Oxidized Nitrided-Oxide Wong, S., Kwan, S., Grinolds, H., Oldham, W. 1983
  • Sealed-Interface Local Oxidation Technology Transactions on Electron Devices Hui, J., Chiu, T., Wong, S., Oldham, W. 1982; 29: 554-561
  • Electrical Properties of MOS Devices Made with SILO Technology Hui, J., Chiu, T., Wong, S., Oldham, W. 1982
  • Nitrided-Oxide, Thin Gate Dielectric for MOS Devices Sodini, C., Wong, S., Ekstedt, T. 1982
  • Selective Oxidation Technologies for High Density MOS IEEE Electron Device Letters Hui, J., Chiu, T., Wong, S., Oldham, W. 1981; 2: 244-247
  • A 64 Kbit MOS Dynamic RAM with Novel Memory Capacitor IEEE Journal of Solid-State Circuits Smith, F., Yau, R., Lee, I., Wong, S., Embrathiry, M. 1980; 15: 184-189
  • Synthesis of Piecewise-Linear Networks IEE Journal of Electronic Circuits and Systems Chua, L., Wong, S. 1978; 2: 102-108
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