
S Simon Wong
Professor of Electrical Engineering, Emeritus
Bio
Wong studies the fabrication and design of high-performance integrated circuits. His work focuses on understanding and overcoming the limitations of circuit performance imposed by device and technology.
Academic Appointments
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Emeritus (Active) Professor, Electrical Engineering
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Member, Bio-X
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Member, Wu Tsai Neurosciences Institute
Honors & Awards
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Fellow, IEEE
Boards, Advisory Committees, Professional Organizations
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Adviser, Atheros Qualcomm (1998 - 2018)
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Board Director, Pericom Semiconductor (2006 - 2015)
Professional Education
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PhD, UC Berkeley (1983)
Current Research and Scholarly Interests
Current research focuses on
Resistive Random Access Memory (RRAM) and Integration with CMOS
Energy Efficient Approximate Computing for Machine Learning
2022-23 Courses
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Independent Studies (6)
- Master's Thesis and Thesis Research
EE 300 (Aut, Win, Spr, Sum) - Special Studies and Reports in Electrical Engineering
EE 191 (Aut, Win, Spr) - Special Studies and Reports in Electrical Engineering
EE 391 (Aut, Win, Spr, Sum) - Special Studies and Reports in Electrical Engineering (WIM)
EE 191W (Aut, Win, Spr) - Special Studies or Projects in Electrical Engineering
EE 190 (Aut, Win, Spr) - Special Studies or Projects in Electrical Engineering
EE 390 (Aut, Win, Spr, Sum)
- Master's Thesis and Thesis Research
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Prior Year Courses
2021-22 Courses
- Circuits I
EE 101A (Win) - Circuits II
EE 101B (Spr)
2019-20 Courses
- Circuits I
EE 101A (Win) - Circuits II
EE 101B (Spr)
- Circuits I
Stanford Advisees
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Doctoral Dissertation Reader (AC)
George Alexopoulos, Wei-Chen Chen, Xiangjin Wu, Joon Yang -
Doctoral Dissertation Advisor (AC)
Fei Huang -
Master's Program Advisor
Isabela David Rodrigues, Yuchen Mei
All Publications
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Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors
IEEE ELECTRON DEVICE LETTERS
2022; 43 (2): 212-215
View details for DOI 10.1109/LED.2021.3136309
View details for Web of Science ID 000748371400015
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RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021; 68 (9): 4397-4403
View details for DOI 10.1109/TED.2021.3097975
View details for Web of Science ID 000686761500038
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3-D Vertical via Nitrogen-Doped Aluminum Oxide Resistive Random-Access Memory
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021; 68 (6): 2712-2716
View details for DOI 10.1109/TED.2021.3075193
View details for Web of Science ID 000652799800018
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A FORMing-Free HfO2-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory With 3-Bit-Per-Cell Storage Capability
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021; 68 (6): 2699-2704
View details for DOI 10.1109/TED.2021.3074354
View details for Web of Science ID 000652799800016
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Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array
IEEE ELECTRON DEVICE LETTERS
2021; 42 (3): 335–38
View details for DOI 10.1109/LED.2021.3055017
View details for Web of Science ID 000622098100010
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Deep COVID DeteCT: an international experience on COVID-19 lung detection and prognosis using chest CT.
NPJ digital medicine
2021; 4 (1): 11
Abstract
The Coronavirus disease 2019 (COVID-19) presents open questions in how we clinically diagnose and assess disease course. Recently, chest computed tomography (CT) has shown utility for COVID-19 diagnosis. In this study, we developed Deep COVID DeteCT (DCD), a deep learning convolutional neural network (CNN) that uses the entire chest CT volume to automatically predict COVID-19 (COVID+) from non-COVID-19 (COVID-) pneumonia and normal controls. We discuss training strategies and differences in performance across 13 international institutions and 8 countries. The inclusion of non-China sites in training significantly improved classification performance with area under the curve (AUCs) and accuracies above 0.8 on most test sites. Furthermore, using available follow-up scans, we investigate methods to track patient disease course and predict prognosis.
View details for DOI 10.1038/s41746-020-00369-1
View details for PubMedID 33514852
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Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks
IEEE TRANSACTIONS ON ELECTRON DEVICES
2020; 67 (11): 4904–10
View details for DOI 10.1109/TED.2020.3025849
View details for Web of Science ID 000584285700062
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A shallow convolutional neural network predicts prognosis of lung cancer patients in multi-institutional computed tomography image datasets
Nature Machine Intelligence
2020; 2 (5): 274–282
View details for DOI 10.1038/s42256-020-0173-6
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Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)-Part I: Accurate and Computationally Efficient Modeling
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019; 66 (12): 5139–46
View details for DOI 10.1109/TED.2019.2950606
View details for Web of Science ID 000502043000014
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Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)-Part II: Design Guidelines for Device, Array, and Architecture
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019; 66 (12): 5147–54
View details for DOI 10.1109/TED.2019.2950595
View details for Web of Science ID 000502043000015
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DATASET CULLING: TOWARDS EFFICIENT TRAINING OF DISTILLATION-BASED DOMAIN SPECIFIC MODELS
IEEE. 2019: 3237–41
View details for Web of Science ID 000521828603075
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A Novel Architecture to Build Ideal-linearity Neuromorphic Synapses on a Pure Logic FinFET Platform Featuring 2.5ns PGM-time and 10(12) Endurance
IEEE. 2019: T138–T139
View details for Web of Science ID 000555822600012
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High-Density Multiple Bits-per-Cell 1T4R RRAM Array with Gradual SET/RESET and its Effectiveness for Deep Learning
IEEE. 2019
View details for Web of Science ID 000553550000083
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Deep learning to predict survival prognosis for patients with non-small cell lung cancer using images and clinical data
AMER ASSOC CANCER RESEARCH. 2018
View details for DOI 10.1158/1538-7445.AM2018-3048
View details for Web of Science ID 000468819500411
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Selector Requirements for Tera-Bit Ultra-High-Density 3D Vertical RRAM
IEEE. 2018: 107–8
View details for Web of Science ID 000465075200039
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Fault-Tolerant FPGA with Column-Based Redundancy and Power Gating Using RRAM
IEEE TRANSACTIONS ON COMPUTERS
2017; 66 (6): 946-956
View details for DOI 10.1109/TC.2016.2634533
View details for Web of Science ID 000401084600003
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Analysis and Design of a Passive Switched-Capacitor Matrix Multiplier for Approximate Computing
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2017; 52 (1): 261-271
View details for DOI 10.1109/JSSC.2016.2599536
View details for Web of Science ID 000395641800023
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LOGNET: ENERGY-EFFICIENT NEURAL NETWORKS USING LOGARITHMIC COMPUTATION
IEEE. 2017: 5900–5904
View details for Web of Science ID 000414286206013
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TPAD: Hardware Trojan Prevention and Detection for Trusted Integrated Circuits
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
2016; 35 (4): 521-534
View details for DOI 10.1109/TCAD.2015.2474373
View details for Web of Science ID 000372995000001
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Switch Application in FPGA
RESISTIVE SWITCHING: FROM FUNDAMENTALS OF NANOIONIC REDOX PROCESSES TO MEMRISTIVE DEVICE APPLICATIONS
2016: 695-713
View details for Web of Science ID 000459595300025
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Fault-tolerant FPGA with Column-based Redundancy and Power Gating Using RRAM
IEEE. 2016: 409–14
View details for DOI 10.1109/ISVLSI.2016.86
View details for Web of Science ID 000389508400070
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A 2.5GHz 7.7TOPS/W Switched-Capacitor Matrix Multiplier with Co-designed Local Memory in 40nm
IEEE. 2016: 418–U587
View details for Web of Science ID 000382151400173
- A Deep Learning Framework to Predict Survival from Medical Images of Lung Cancer Patients Conference on Neural Information Processing Systems, Workshop on Machine Learning for Health 2016
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Monolithic 3-D FPGAs
PROCEEDINGS OF THE IEEE
2015; 103 (7): 1197-1210
View details for DOI 10.1109/JPROC.2015.2433954
View details for Web of Science ID 000356806900012
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Compact One-Transistor-N-RRAM Array Architecture for Advanced CMOS Technology
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2015; 50 (5): 1299-1309
View details for DOI 10.1109/JSSC.2015.2402217
View details for Web of Science ID 000354186300020
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All-Metal-Nitride RRAM Devices
IEEE ELECTRON DEVICE LETTERS
2015; 36 (1): 29-31
View details for DOI 10.1109/LED.2014.2367542
View details for Web of Science ID 000347045200011
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FACTORIZATION FOR ANALOG-TO-DIGITAL MATRIX MULTIPLICATION
IEEE. 2015: 1061–65
View details for Web of Science ID 000427402901036
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The Role of Ti Capping Layer in HfOx-Based RRAM Devices
IEEE ELECTRON DEVICE LETTERS
2014; 35 (9): 912-914
View details for DOI 10.1109/LED.2014.2334311
View details for Web of Science ID 000341574200007
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Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM
IEEE TRANSACTIONS ON ELECTRON DEVICES
2014; 61 (6): 2158-2163
View details for DOI 10.1109/TED.2014.2319074
View details for Web of Science ID 000338026200081
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Low-Temperature Monolithic Three-Layer 3-D Process for FPGA
IEEE ELECTRON DEVICE LETTERS
2013; 34 (8): 1044-1046
View details for DOI 10.1109/LED.2013.2266111
View details for Web of Science ID 000323911800037
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Nanometer-Scale HfOx RRAM
IEEE ELECTRON DEVICE LETTERS
2013; 34 (8): 1005-1007
View details for DOI 10.1109/LED.2013.2265404
View details for Web of Science ID 000323911800024
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Impact of III-V and Ge Devices on Circuit Performance
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
2013; 21 (7): 1189-1200
View details for DOI 10.1109/TVLSI.2012.2210450
View details for Web of Science ID 000320946200002
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Effect of Wordline/Bitline Scaling on the Performance, Energy Consumption, and Reliability of Cross-Point Memory Array
ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS
2013; 9 (1)
View details for DOI 10.1145/2422094.2422103
View details for Web of Science ID 000315457200009
- Trusted Integrated Chips Integrating Non-Volatile Memory with CMOS 2013
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First Demonstration of RRAM Patterned by Block Copolymer Self-Assembly
IEEE International Electron Devices Meeting (IEDM)
IEEE. 2013
View details for Web of Science ID 000346509500136
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Characterization of Geometric Leakage Current of GeO2 Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions
IEEE ELECTRON DEVICE LETTERS
2012; 33 (11): 1520-1522
View details for DOI 10.1109/LED.2012.2211856
View details for Web of Science ID 000310387100003
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A superheterodyne receiver front-end with on-chip automatically Q-tuned notch filters
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
2012; 71 (3): 453-463
View details for DOI 10.1007/s10470-011-9771-x
View details for Web of Science ID 000304101200011
- Nonvolatile 3D-FPGA with Monolithically Stacked RRAM-Based Configuration Memory 2012
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Scaling Challenges for the Cross-point Resistive Memory Array to Sub-10nm Node - An Interconnect Perspective
4th IEEE International Memory Workshop (IMW)
IEEE. 2012
View details for Web of Science ID 000332985300029
- Scaling Challenges for the Cross-point Resistive Memory Array to the Single-digit-nm Node – An Interconnect Perspective 2012
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Array Architecture for a Nonvolatile 3-Dimensional Cross-Point Resistance-Change Memory
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2011; 46 (9): 2158-2170
View details for DOI 10.1109/JSSC.2011.2148430
View details for Web of Science ID 000294169700018
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A 65 nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands
MICROELECTRONICS JOURNAL
2011; 42 (6): 855-862
View details for DOI 10.1016/j.mejo.2011.04.004
View details for Web of Science ID 000292408100005
- A 60GHz Digitally Controlled RF Beamforming Array in 65nm CMOS with Off-Chip Antennas 2011
- Forming-Free Nitrogen-Doped AlOx RRAM with Sub-μA Programming Current 2011
- 3D Field Programmable Gate Array 2011
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Semiconductor crystal islands for three-dimensional integration
54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication
A V S AMER INST PHYSICS. 2010: C6P53-C6P58
View details for DOI 10.1116/1.3511473
View details for Web of Science ID 000285015200113
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Leakage Current Analysis of Lateral p+/n Ge Based Diode Activated at Low Temperature for Three-Dimensional Integrated Circuit (3D-ICs)
Symposium on Processing, Materials, and Integration of Damascene and 3D Interconnects held during the 218th Meeting of the Electrochemical-Society
ELECTROCHEMICAL SOC INC. 2010: 35–39
View details for DOI 10.1149/1.3501032
View details for Web of Science ID 000315439100003
- Leakage Current Analysis of Lateral p+/n Ge Based Diode Activated at Low Temperature for Three-Dimensional Integrated Circuit (3D-ICs) 2010
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Optimization of Driver Preemphasis for On-Chip Interconnects
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
2009; 56 (9): 2033-2041
View details for DOI 10.1109/TCSI.2008.2011593
View details for Web of Science ID 000269841000001
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RESET Mechanism of TiOx Resistance-Change Memory Device
IEEE ELECTRON DEVICE LETTERS
2009; 30 (7): 733-735
View details for DOI 10.1109/LED.2009.2021001
View details for Web of Science ID 000267607900012
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Elimination of Forming Process for TiOx Nonvolatile Memory Devices
IEEE ELECTRON DEVICE LETTERS
2009; 30 (7): 763-765
View details for DOI 10.1109/LED.2009.2021003
View details for Web of Science ID 000267607900022
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Reduction of Inductive Crosstalk Using Quadrupole Inductors
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2009; 44 (6): 1756-1764
View details for DOI 10.1109/JSSC.2009.2020525
View details for Web of Science ID 000266723400010
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Pi Coil: A New Element for Bandwidth Extension
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
2009; 56 (6): 454-458
View details for DOI 10.1109/TCSII.2009.2020943
View details for Web of Science ID 000267438500006
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A 60-GHz LOW-NOISE AMPLIFIER FOR 60-GHz DUAL-CONVERSION RECEIVER
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
2009; 51 (4): 885-891
View details for DOI 10.1002/mop.24200
View details for Web of Science ID 000264111800004
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The Prospect of 3D-IC
IEEE Custom Integrated Circuits Conference
IEEE. 2009: 445–448
View details for Web of Science ID 000275926300095
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Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver
2009 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PROGRAM
2009: 88-?
View details for Web of Science ID 000271941200023
- Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver 2009
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Performance Comparison between Capacitively Driven Low Swing and Conventional Interconnects for Cu and Carbon Nanotube Wire Technologies
IEEE International Interconnect Technology Conference
IEEE. 2009: 23–25
View details for Web of Science ID 000272206600007
- A High-Performance 3D-SRAM Architecture 2009
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Numerical estimation of yield in sub-100-nm SRAM design using Monte Carlo simulation
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
2008; 55 (9): 907-911
View details for DOI 10.1109/TCSII.2008.923411
View details for Web of Science ID 000258950800016
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High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts
IEEE ELECTRON DEVICE LETTERS
2008; 29 (7): 805-807
View details for DOI 10.1109/LED.2008.2000613
View details for Web of Science ID 000257626000047
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A High-speed, Low-power 3D-SRAM Architecture
IEEE Custom Integrated Circuits Conference
IEEE. 2008: 201–204
View details for Web of Science ID 000262643900045
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A low-power V-band CMOS low-noise amplifier using current-sharing technique
IEEE. 2008: 964-+
View details for DOI 10.1109/ISCAS.2008.4541580
View details for Web of Science ID 000258532100245
- A Low-Power V-Band CMOS Low Noise Amplifier using Current Sharing Technique 2008
- Monolithic 3D Integrated Circuits 2008
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An on-chip dipole antenna for millimeter-wave transmitters
IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
IEEE. 2008: 571–574
View details for Web of Science ID 000258748700143
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Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films
APPLIED PHYSICS LETTERS
2007; 91 (11)
View details for DOI 10.1063/1.2784169
View details for Web of Science ID 000249474000022
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Closed-form RC and RLC delay models considering input rise time
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
2007; 54 (9): 2001-2010
View details for DOI 10.1109/TCSI.2007.902539
View details for Web of Science ID 000249730800013
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Statistical simulation methodology for sub100 nm memory design
ELECTRONICS LETTERS
2007; 43 (16): 869-870
View details for DOI 10.1049/el:20070394
View details for Web of Science ID 000248833900016
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Performance benefits of monolithically stacked 3-D FPGA
International Symposium on Field-Programmable Gate Arrays
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2007: 216–29
View details for DOI 10.1109/TCAD.2006.887920
View details for Web of Science ID 000243953000003
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Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices
IEEE ELECTRON DEVICE LETTERS
2007; 28 (1): 14-16
View details for DOI 10.1109/LED.2006.887640
View details for Web of Science ID 000243280900006
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A superheterodyne receiver front-end with on-chip automatically Q-tuned notch filters
2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS
2007: 21-?
View details for Web of Science ID 000248148800004
- A Fully Integrated RF Front-End with Independent RX/TX Matching and +20dbm Output Power for WLAN Applications 2007
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Integrated transformer baluns for RF low noise and power amplifiers
IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
IEEE. 2006: 85–88
View details for Web of Science ID 000239086300021
- Nonvolatile SRAM Cell 2006
- Performance Benefits of Monolithically Stacked 3D-FPGA 2006
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Multiphysics modeling and impact of thermal boundary resistance in phase change memory devices
10th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems
IEEE. 2006: 106–113
View details for Web of Science ID 000243624500013
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Integrated transformer baluns for RF low noise and power amplifiers
IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
IEEE. 2006: 69–72
View details for Web of Science ID 000245137400018
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Analysis and synthesis of on-chip spiral inductors
IEEE TRANSACTIONS ON ELECTRON DEVICES
2005; 52 (2): 176-182
View details for DOI 10.1109/TED.2004.842535
View details for Web of Science ID 000226481900007
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Scalability of RF CMOS
IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
IEEE. 2005: 53–56
View details for Web of Science ID 000230541500011
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Studies of the driving force for room-temperature microstructure evolution in electroplated copper films
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
2004; 22 (5): 2369-2374
View details for DOI 10.1116/1.1788680
View details for Web of Science ID 000225048300022
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Integrated CMOS transmit-receive switch using LC-Tuned substrate bias for 2.4-GHz and 5.2-GHz applications
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2004; 39 (6): 863-870
View details for DOI 10.1109/JSSC.2004.827809
View details for Web of Science ID 000221803600001
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Valuation of American options via basis functions
IEEE TRANSACTIONS ON AUTOMATIC CONTROL
2004; 49 (3): 374-385
View details for DOI 10.1109/TAC.2004.824466
View details for Web of Science ID 000220256400006
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Modeling and optimization of substrate resistance for RF-CMOS
IEEE TRANSACTIONS ON ELECTRON DEVICES
2004; 51 (3): 421-426
View details for DOI 10.1109/TED.2003.822586
View details for Web of Science ID 000189247400019
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A 10-GHz global clock distribution using coupled standing-wave oscillators
IEEE International Solid-State Circuits Conference
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 1813–20
View details for DOI 10.1109/JSSC.2003.818299
View details for Web of Science ID 000186249100004
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Near speed-of-light velocities for on-chip - transmission of electrical signals
SOLID STATE TECHNOLOGY
2003; 46 (5): 52-?
View details for Web of Science ID 000182953800008
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Near speed-of-light signaling over on-chip electrical interconnects
Symposium on VLSI Circuits
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 834–38
View details for DOI 10.1109/JSSC.2003.810060
View details for Web of Science ID 000182517500021
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Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films
JOURNAL OF APPLIED PHYSICS
2003; 93 (7): 3796-3804
View details for DOI 10.1063/1.1555274
View details for Web of Science ID 000181729600010
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On the accuracy of return path assumption for loop inductance extraction for 0.1 mu m technology and beyond
4th IEEE International Symposium on Quality Electronic Design
IEEE COMPUTER SOC. 2003: 401–404
View details for Web of Science ID 000182249900057
- An Integrated 5.2GHz CMOS T/R Switch with LC-Tuned Substrate Bias 2003
- Mechanism for Early Failure in Cu Dual Damascene Structure 2003
- 10GHz Clock Distribution Using Coupled Standing-Wave Oscillators 2003
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Compact modeling of high frequency phenomena for on-chip spiral inductors
Nanotechnology Conference and Trade Show (Nanotech 2003)
COMPUTATIONAL PUBLICATIONS. 2003: 360–363
View details for Web of Science ID 000223045900093
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Design of a 10GHz clock distribution network using coupled standing-wave oscillators
40th Design Automation Conference
ASSOC COMPUTING MACHINERY. 2003: 682–687
View details for Web of Science ID 000184080900125
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High-frequency characterization of on-chip digital interconnects
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2002; 37 (6): 716-725
View details for Web of Science ID 000175929500006
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A 0-dB IL 2140 +/- 30 MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS
Symposium on VLSI Circuits
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2002: 579–86
View details for Web of Science ID 000175198900007
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Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design (vol 36, pg 1480, 2001)
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2002; 37 (2): 255-255
View details for Web of Science ID 000173734300018
- High Frequency Characterization of On-Chip Digital Interconnects IEEE Journal of Solid State Circuits 2002; 37: 716-725
- Near Speed-of-Light On-Chip Electrical Interconnect 2002
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Recovery of open via after electromigration in Cu dual Damascene interconnect
40th Annual IEEE International Reliability Physics Symposium
IEEE. 2002: 435–436
View details for Web of Science ID 000176016400077
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Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2001; 36 (10): 1480-1488
View details for Web of Science ID 000171192400006
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A 0dB-IL, 2140 +/- 30 MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS
Symposium on VLSI Circuits
JAPAN SOCIETY APPLIED ELECTROMAGNETICS & MECHANICS. 2001: 15–18
View details for Web of Science ID 000173132600005
- Evidence of Dislocation Loops as a Driving Force for Self Annealing in Electroplated Cu Films 2001
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CMOS RF integrated circuits at 5 GHz and beyond
PROCEEDINGS OF THE IEEE
2000; 88 (10): 1560-1571
View details for Web of Science ID 000165853300004
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Distributed ESD protection for high-speed integrated circuits
IEEE ELECTRON DEVICE LETTERS
2000; 21 (8): 390-392
View details for Web of Science ID 000088465000007
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Physical modeling of spiral inductors on silicon
IEEE TRANSACTIONS ON ELECTRON DEVICES
2000; 47 (3): 560-568
View details for Web of Science ID 000085766300011
- Microanalysis of VLSI Interconnect Failure Modes under Short-Pulse Stress Conditions 2000
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A multi-scale random-walk thermal-analysis methodology for complex IC-interconnect systems
International Conference on Simulation of Semiconductor Processes and Devices
IEEE. 2000: 84–86
View details for Web of Science ID 000166421700020
- Quantitative Projections of Reliability and Performance for Low-k/Cu Interconnect Systems 2000
- On-Chip Inductance Modeling of VLSI Interconnects 2000
- Correlation of Stress and Texture Evolution During Self- and Thermal Annealing of Electroplated Cu Films 2000
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Kinetics of copper drift in low-kappa polymer interlevel dielectrics
IEEE TRANSACTIONS ON ELECTRON DEVICES
1999; 46 (11): 2178-2187
View details for Web of Science ID 000083256800003
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A BICMOS active substrate probe-card technology for digital testing
IEEE JOURNAL OF SOLID-STATE CIRCUITS
1999; 34 (8): 1118-1135
View details for Web of Science ID 000081755500011
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Microstructure and reliability of copper interconnects
IEEE TRANSACTIONS ON ELECTRON DEVICES
1999; 46 (6): 1113-1120
View details for Web of Science ID 000080532400007
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Ultra-low resistance, through-wafer via (TWV) technology and its applications in three dimensional structures on silicon
1998 International Conference on Solid State Devices and Materials (SSDM 98)
JAPAN SOC APPLIED PHYSICS. 1999: 2393–96
View details for Web of Science ID 000082871300046
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Barriers for copper interconnections
SOLID STATE TECHNOLOGY
1999; 42 (4): 53-?
View details for Web of Science ID 000079487500015
- Monolithic CMOS Distributed Amplifier and Oscillator 1999
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A study on substrate effects of silicon-based RF passive components
1999 IEEE MTT-S International Microwave Symposium on the Magic Touch of Microwaves
IEEE. 1999: 1625–1628
View details for Web of Science ID 000081428500373
- Kinetics of Copper Drift in Low-k Polymer Interlevel Dielectrics IEEE Transactions on Electron Devices 1999; 46: 2178-2187
- A Study on Substrate Effects of Silicon-Based RF Passive Components 1999
- Line Inductance Extraction and Modeling in a Real Chip with Power Grid 1999
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Evaluation of copper penetration in low-kappa polymer dielectrics by bias-temperature stress
Symposium N on Advanced Interconnects and Contacts, at the 1999 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 1999: 535–549
View details for Web of Science ID 000083461300076
- Effects of Plating Current Density and Solution Additive on the Microstructure and Recrystallization Rate of Electroplated Copper Films 1999
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Evaluation of copper penetration in low-kappa polymer dielectrics by bias-temperature stress
Symposium O: Low-Dielectric Constant Materials at the 1999 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 1999: 173–187
View details for Web of Science ID 000085482500021
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Lateral IGBT in thin SOI for high voltage, high speed power IC
IEEE TRANSACTIONS ON ELECTRON DEVICES
1998; 45 (10): 2251-2254
View details for Web of Science ID 000076221300024
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Electrical leakage at low-K polyimide/TEOS interface
IEEE ELECTRON DEVICE LETTERS
1998; 19 (6): 177-179
View details for Web of Science ID 000073727100001
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On-chip spiral inductors with patterned ground shields for Si-based RF IC's
1997 Symposium on VLSI Circuits
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1998: 743–52
View details for Web of Science ID 000073300400010
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SOI MOSFET with buried body strap by wafer bonding
IEEE TRANSACTIONS ON ELECTRON DEVICES
1998; 45 (5): 1084-1091
View details for Web of Science ID 000073176500013
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Temperature-dependent thermal conductivity of single-crystal silicon layers in SOI substrates
IMECE Meeting
ASME-AMER SOC MECHANICAL ENG. 1998: 30–36
View details for Web of Science ID 000072527000003
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Electrical reliability of Cu and low-K dielectric integration
4th Symposium on Low Dielectric Constant Materials for Microelectronics Applications
MATERIALS RESEARCH SOCIETY. 1998: 317–327
View details for Web of Science ID 000077020800041
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Microstructure and mechanical properties of electroplated Cu films for Damascene ULSI metallization
Symposium on Thin-Films - Stresses and Mechanical Properties VII at the MRS Fall Meeting
MATERIALS RESEARCH SOCIETY. 1998: 137–142
View details for Web of Science ID 000075849800019
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Copper electroplating for damascene ULSI interconnects
Symposium on Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits
MATERIALS RESEARCH SOCIETY. 1998: 275–280
View details for Web of Science ID 000077430000045
- Modeling and Characterization of On-Chip Transformer 1998
- Effect of Seed Layer Texture and Surface Roughness on the Microstructure of Electroplated Copper Film 1998
- Copper Drift in Low-K Polymer Dielectrics for ULSI Metallization 1998
- Electromigration of Submicron Damascene Copper 1998
- Copper Electroplating for Damascene ULSI Interconnects 1998
- A Novel Crosstalk Isolation Structure for Bulk CMOS Power IC’s IEEE Transactions on Electron Devices 1998; 45: 1580-1586
- Lateral Emitter Controlled Thyristor (LECT) on SOI 1998
- 50 Ghz Interconnect Design in Standard Silicon Technology 1998
- Analysis and Optimization of Accumulation-Mode Varactor for RF ICs 1998
- Copper Drift in Low-K Polymer Dielectrics for ULSI Metallization 1998
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Evidence of heteroepitaxial growth of copper on beta-tantalum
APPLIED PHYSICS LETTERS
1997; 71 (21): 3069-3071
View details for Web of Science ID A1997YG83400013
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Phonon-boundary scattering in thin silicon layers
APPLIED PHYSICS LETTERS
1997; 71 (13): 1798-1800
View details for Web of Science ID A1997XY99300018
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Investigation of aluminum nitride grown by metal-organic chemical-vapor deposition on silicon
JOURNAL OF APPLIED PHYSICS
1997; 82 (6): 2990-2995
View details for Web of Science ID A1997XX99600040
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Heating mechanisms of LDMOS and LIGBT in ultrathin SOI
IEEE ELECTRON DEVICE LETTERS
1997; 18 (9): 414-416
View details for Web of Science ID A1997XR89300004
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Short-timescale thermal mapping of semiconductor devices
IEEE ELECTRON DEVICE LETTERS
1997; 18 (5): 169-171
View details for Web of Science ID A1997WU99600001
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Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers
IEEE JOURNAL OF QUANTUM ELECTRONICS
1997; 33 (2): 219-230
View details for Web of Science ID A1997WD89400012
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Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI
IEEE ELECTRON DEVICE LETTERS
1997; 18 (1): 13-15
View details for Web of Science ID A1997VZ12900005
- Microstructure and Mechanical properties of Electroplated Cu Films for Damascene ULSI Metallization 1997
- Characteristics of Ta as an Underlayer for Cu Interconnect 1997
- A Novel Methodology for Reliability Studies in Fully Depleted SOI MOSFETs 1997
- Electrical Stability of Low-K Polyimide/TEOS Interface 1997
- Polished TFT's: Surface Roughness Reduction and Its Correlation to Device Performance Improvement IEEE Transactions on Electron Devices 1997; 44: 455-463
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Electrical extraction of the in-plane dielectric constant of fluorinated polyimide
Symposium on Low-Dielectric Constant Materials III, at the 1997 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 1997: 129–134
View details for Web of Science ID 000072112700018
- Pnonon-Boundary Scattering in Thin Silicon Layers Applied Physics Letters 1997; 71: 1798-1800
- A Quasi-Stadium Semiconductor Laser 1997
- On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF IC’s 1997
- Effect of Texture on the Electromigration of CVD Copper 1997
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Evidence of reduced maximum E-field in Quasi-SOI MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES
1996; 43 (12): 2308-2310
View details for Web of Science ID A1996VU87900037
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Kinetics of copper drift in PECVD dielectrics
IEEE ELECTRON DEVICE LETTERS
1996; 17 (12): 549-551
View details for Web of Science ID A1996VX16300001
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A BICMOS active substrate probe card technology for digital testing
1996 IEEE International Solid-State Circuits Conference
I E E E. 1996: 308–309
View details for Web of Science ID A1996BF43W00124
- Lateral IGBT on Thin SOI for High-Speed Power IC Applications 1996
- Deep Sub-Micron SOI MOSFET with Buried Body Strap 1996
- Optimizing Polysilicon Thin-Film Transistor Performance with Chemical-Mechanical Polishing and Hydrogenation IEEE Electron Device Letters 1996; 17: 518-520
- Active Substrate Membrane Probe Card 1996
- The Combined Effects of Chemical-Mechanical Polishing and Hydrogenation on Poly-Si TFT’s 1996
- CMOS Latchup Characterization for LDMOS/LIGBT Power Integrated Circuits 1996
- A Power IC technology with Excellent Cross-Talk Isolation IEEE Electron Device Letters 1996; 17: 467-469
- Temperature-Dependent Thermal Conductivity of Single Crystal Silicon Layers in SOI Substrates 1996
- Grain Structure of CVD Copper Films 1996
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A physical model for planar spiral inductors on silicon
1996 International Electron Devices Meeting
IEEE. 1996: 155–158
View details for Web of Science ID A1996BG98F00034
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High voltage LDMOS transistors in sub-micron SOI films
8th International Symposium on Power Semiconductor Devices and PCs (ISPSD 96)
I E E E. 1996: 89–92
View details for Web of Science ID A1996BF73Z00012
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Formation and high frequency CV-measurements of aluminum aluminum nitride 6H silicon carbide structures
Symposium on III-Nitride, SiC and Diamond Materials for Electronic Devices
MATERIALS RESEARCH SOCIETY. 1996: 667–672
View details for Web of Science ID A1996BG72B00103
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LATERAL-MODE BEHAVIOR OF REACTIVE-ION-ETCHED STABLE-RESONATOR SEMICONDUCTOR-LASERS
JOURNAL OF APPLIED PHYSICS
1995; 78 (6): 4294–96
View details for DOI 10.1063/1.359831
View details for Web of Science ID A1995RU95300115
- Monolithic Stable-Resonator Semiconductor Laser 1995
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Self-heating effect in lateral DMOS on SOI
7th International Symposium on Power Semiconductor Devices and ICS (ISPSD 95)
I E E E. 1995: 136–140
View details for Web of Science ID A1995BD72A00025
- Evidence of Reduced Maximum Lateral E-Field in Quasi-SOI MOSFETs 1995
- Electrical and Thermal Study of Membrane Multi-Chip Module Systems 1995
- A Micromachined Array Probe Card - Characterization IEEE Transactions on Components, Packaging and Manufacturing Technology Part B: Advanced Packaging 1995; 18: 184-191
- Non-Radial Non-Uniformity in Chemo-Mechanical Polishing 1995
- A Micromachined Array Probe Card - Fabrication Process IEEE Transactions on Components, Packaging and Manufacturing Technology Part B: Advanced Packaging 1995; 18: 179-183
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Active substrate membrane probe card
1995 International Electron Devices Meeting
IEEE. 1995: 709–712
View details for Web of Science ID A1995BF10D00160
- An Effective Cross-Talk Isolation Structure for Power IC Applications 1995
- Reliability of Chemically Vapor Deposited (CVD) Copper Interconnections Journal of Materials Chemistry and Physics 1995; 41: 229-233
- Influence of Parasitic Capacitances on Switching Characteristics of SOI-LDMOSs 1995
- Contact Technology for High Performance Scalable BiCMOS on TFSOI IEEE Electron Device Letters 1995; 16: 424-426
- Lateral Mode Behavior of Reactive-Ion-Etched Stable-Resonator Semiconductor Lasers Journal of Applied Physics 1995; 78: 4294-4296
- Cross-Talk Prevention for Power Integrated Circuits 1995
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THE EFFECTS OF IMPACT IONIZATION ON THE OPERATION OF NEIGHBORING DEVICES AND CIRCUITS
IEEE TRANSACTIONS ON ELECTRON DEVICES
1994; 41 (9): 1603-1607
View details for Web of Science ID A1994PE02600015
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MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS
IEEE ELECTRON DEVICE LETTERS
1994; 15 (4): 132-134
View details for Web of Science ID A1994NK10700006
- Parasitic Bipolar Gain in Fully Depleted n-Channel SOI MOSFET’s IEEE Transactions on Electron Devices 1994; 41: 970-977
- Application of Selective Epitaxial Silicon and Chemo-Mechanical Polishing to Bipolar Transistors IEEE Transactions on Electron Devices 1994; 41: 2343-2350
- Microstructure of CVD Copper on TiW 1994
- High-Power Diffraction-Limited Reactive-Ion-Etched Unstable-Resonator Diode Lasers 1994
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ELECTROLESS CU FOR VLSI
MRS BULLETIN
1993; 18 (6): 31-38
View details for Web of Science ID A1993LH30400003
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SERIAL-PARALLEL FFT ARRAY PROCESSOR
IEEE TRANSACTIONS ON SIGNAL PROCESSING
1993; 41 (3): 1472–76
View details for DOI 10.1109/78.205760
View details for Web of Science ID A1993KU54500051
- A Selective CVD Tungsten-Strapped Polysilicon Local Interconnection Technology IEEE Transactions on Electron Devices 1993; 40: 1223-1230
- Development of an Active Membrane Probe Card 1993
- Membrane Multi-Chip Module Technology on Si 1993
- First Direct Beta Measurement for Parasitic Lateral Bipolar Transistors in Fully Depleted SOI MOSFET’s 1993
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THE EFFECTS OF HOT CARRIERS GENERATION ON THE OPERATION OF NEIGHBORING DEVICES AND CIRCUITS
1993 SYMP ON VERY-LARGE-SCALE-INTEGRATION ( VLSI ) TECHNOLOGY
JAPAN SOC APPLIED PHYSICS. 1993: 11–12
View details for Web of Science ID A1993BZ20V00003
- Reliability of CVD Cu Buried Interconnections 1993
- The Effects of Hot Carriers Generation on the Operation of Neighboring Devices and Circuits 1993
- Serial-Parallel FFT Array Processor IEEE Transactions on Signal Processing 1993; 41: 1472-1476
- Grain Structure and Electromigration Properties of CVD Cu Metallization 1993
- CVD Cu Interconnections for VLSI Metallization 1993
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ELECTROMIGRATION PROPERTIES OF ELECTROLESS PLATED CU METALLIZATION
IEEE ELECTRON DEVICE LETTERS
1992; 13 (9): 448-450
View details for Web of Science ID A1992JJ71900002
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MONOLITHIC ALGAAS-GAAS SINGLE QUANTUM-WELL RIDGE LASERS FABRICATED WITH DRY-ETCHED FACETS AND RIDGES
IEEE JOURNAL OF QUANTUM ELECTRONICS
1992; 28 (5): 1227–31
View details for DOI 10.1109/3.135259
View details for Web of Science ID A1992HT02300001
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ALGAAS/GAAS-BASED TRIANGULAR-SHAPED RING RIDGE LASERS
APPLIED PHYSICS LETTERS
1992; 60 (14): 1658–60
View details for DOI 10.1063/1.107228
View details for Web of Science ID A1992HM46600004
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A PLANAR INTERCONNECTION TECHNOLOGY UTILIZING THE SELECTIVE DEPOSITION OF TUNGSTEN - PROCESS CHARACTERIZATION
IEEE TRANSACTIONS ON ELECTRON DEVICES
1992; 39 (4): 893–900
View details for Web of Science ID A1992HH95100020
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A PLANAR INTERCONNECTION TECHNOLOGY UTILIZING THE SELECTIVE DEPOSITION OF TUNGSTEN - MULTILEVEL IMPLEMENTATION
IEEE TRANSACTIONS ON ELECTRON DEVICES
1992; 39 (4): 901–7
View details for DOI 10.1109/16.127480
View details for Web of Science ID A1992HH95100021
- A Planar Interconnection Technology Utilizing the Selective Deposition of Tungsten – Multilevel Implementation IEEE Transactions on Electron Devices 1992; 39: 901-907
- Electromigration Properties of Electroless and CVD Cu Metallization 1992
- Array probe card 1992
- Micro-Machined Array Probe Card 1992
- Complementary Lateral Bipolar Transistor Action in a CMOS Technology IEEE Electron Device Letters 1992; 13: 312-313
- CVD Cu Interconnections for ULSI 1992
- Monolithic Integration of GaAs and Si Bipolar Devices for Optical Interconnect Systems 1992
- Measurement of Lateral Dopant Diffusion in Thin Silicide Layers IEEE Transactions on Electron Devices 1992; 60: 2333-2340
- Electromigration Performance of Electroless Plated Copper / Pd-Silicide Metallization IEEE Electron Device Letters 1992; 13: 433-435
- AlGaAs/GaAs-Based Triangular-Shaped Ring Ridge Laser Applied Physics Letters 1992; 60: 1658-1660
- Quasi-SOI MOSFETs Using Selective Epitaxy and Polishing 1992
- Monolithic AlGaAs/GaAs Single Quantum Well Ridge Lasers Fabricated with Dry-Etched Facets and Ridges IEEE Journal of Quantum Electronics 1992; 28: 1227-1231
- A Planar Interconnection Technology Utilizing the Selective Deposition of Tungsten – Process Characterization IEEE Transactions on Electron Devices 1992; 39: 893-900
- Al-Cu Interconnection Formed by Diffusing Selectively Deposited CVD Cu into Patterned Al Lines 1992
- Single-Poly Bipolar Transistor with Selective Epitaxial Silicon and Chemo-Mechanical Polishing 1992
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HIGH-GAIN LATERAL BIPOLAR ACTION IN A MOSFET STRUCTURE
IEEE TRANSACTIONS ON ELECTRON DEVICES
1991; 38 (11): 2487-2496
View details for Web of Science ID A1991GJ60100013
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ETCHED-FACET ALGAAS TRIANGULAR-SHAPED RING LASERS WITH OUTPUT COUPLING
APPLIED PHYSICS LETTERS
1991; 59 (12): 1395–97
View details for DOI 10.1063/1.105317
View details for Web of Science ID A1991GF29500001
- Implantation to Suppress Parasitic Bipolar Action in CMOS IEEE Transactions on Electron Devices 1991; 38: 355-364
- Copper Interconnection with Tungsten Cladding for ULSI 1991
- Series Resistance of Devices with Submicrometer Source/Drain Areas IEEE Electron Device Letters 1991; 12: 664-666
- Technology Limitations for N+/P+ Polycide Gate CMOS Due to Lateral Dopant Diffusion in Silicide/Polysilicon Layers IEEE Electron Device Letters 1991; 12: 696-698
- Etched-Facet AlGaAs Triangular-Shaped Ring Lasers with Output Coupling Applied Physics Letters 1991; 59: 1395-1397
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HOT-ELECTRON-INDUCED MINORITY-CARRIER GENERATION IN BIPOLAR JUNCTION TRANSISTORS
IEEE ELECTRON DEVICE LETTERS
1990; 11 (11): 490–92
View details for DOI 10.1109/55.63010
View details for Web of Science ID A1990EE94500003
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A SELF-ALIGNED NITROGEN IMPLANTATION PROCESS (SNIP) TO MINIMIZE FIELD OXIDE THINNING EFFECT IN SUBMICROMETER LOCOS
IEEE TRANSACTIONS ON ELECTRON DEVICES
1990; 37 (9): 1948-1958
View details for Web of Science ID A1990DU61600003
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EFFECT OF CLADDING LAYER THICKNESS ON THE PERFORMANCE OF GAAS-ALGAAS GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM-WELL LASERS
IEEE JOURNAL OF QUANTUM ELECTRONICS
1990; 26 (9): 1476–80
View details for DOI 10.1109/3.102624
View details for Web of Science ID A1990EK41000006
- Hot-Electron-Induced Minority-Carrier Generation in Bipolar Junction Transistors IEEE Electron Device Letters 1990; 11: 490-492
- Traveling-Wave Operation in a Triangular-Shaped Monolithic Semiconductor Ring Ridge Laser 1990
- A High Performance Single Chip FFT Array Processor for Wafer Scale Integration 1990
- A Complementary High Gain Transistor for Use in a CMOS Compatible Technology 1990
- Fully Monolithic Self-Aligned GaAs/AlGaAs Single Quantum Well Ridge Laser 1990
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A COMPLEMENTARY HIGH-CURRENT GAIN TRANSISTOR FOR USE IN A CMOS COMPATIBLE TECHNOLOGY
1990 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING
I E E E, ELECTRON DEVICES SOC & RELIABILITY GROUP. 1990: 82–85
View details for Web of Science ID A1990BS57Q00014
- A Self-Aligned Nitrogen Implantation Process (SNIP) to Minimize Field Oxide Thinning Effect in Submicrometer LOCOS IEEE Transactions on Electron Devices 1990; 37: 1948-1958
- Characterization of Lateral Dopant Diffusion in Silicides 1990
- Effect of Cladding Layer Thickness on the Performance of GaAs-AlGaAs Graded Index Separate Confinement Heterostructure Single Quantum-Well Lasers IEEE Journal of Quantum Electronics 1990; 26: 1476-1480
- Characterization of Lateral Dopant Diffusion in Silicides 1990
- Characterization of Lateral Bipolar Transistor Structure 1990
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EFFICIENT COUPLING OF OPTICAL FIBER TO SILICON PHOTODIODE
IEEE ELECTRON DEVICE LETTERS
1989; 10 (6): 255–56
View details for DOI 10.1109/55.31738
View details for Web of Science ID A1989U751800005
- Efficient Coupling of Optical Fiber to Silicon Photodiode IEEE Electron Device Letters 1989; 10: 255-256
- Hot Electron Induced Minority Carrier Generation in Bipolar Junction Transistors 1989
- Masking Considerations in Chemically Assisted Ion Beam Etching of GaAs/AlGaAs Laser Structures Journal of Electrochemical Society 1989; 136: 779-782
- A Framework to Evaluate Technology and Device Design Enhancements for MOS Integrated Circuits IEEE Journal of Solid-State Circuits 1989; 24: 118-127
- Lateral NPN Bipolar Transistor for High Current Gain Applications at Reduced Temperatures 1989
- Rectangular and L-Shaped GaAs/AlGaAs Lasers with Very High Quality Etched Facets Applied Physics Letters 1989; 54: 493-495
- A Multilevel Tungsten Interconnect Technology 1988
- A Triangular-Shaped GaAs/AlGaAs Laser 1988
- A Selective CVD Tungsten Local Interconnect Technology 1988
- High Gain Lateral Bipolar Transistor 1988
- Multilevel Tungsten Interconnect Technology 1988
- Oxygen Implantation for Internal Gettering and Reducing Carrier Lifetime Applied Physics Letters 1987; 50: 986-988
- Semiconductor Lasers with Very High Quality Etched Facets 1987
- Oxygen Implantation for Improved CMOS Latchup Immunity 1987
- HPSAC – A Silicided Amorphous-Silicon Contact and Interconnect Technology for VLSI IEEE Transactions on Electron Devices 1987; 34: 587-592
- Oxygen Implantation for Lifetime Control 1986
- A Planar Multi-Level Tungsten Interconnect Technology 1986
- Specific Contact Resistivity of TiSi2 to p+ and n+ Junctions IEEE Electron Device Letters 1985; 6: 479-481
- Anodic Nitridation of Silicon and Silicon Dioxide IEEE Transactions on Electron Devices 1985; 32: 978-982
- CMOS Well Drive-In in NH3 for Reduced Lateral Diffusion and Heat Cycle IEEE Electron Device Letters 1985; 6: 659-661
- CMOS Well Drive-In in NH3 for Reduced Lateral Diffusion and Heat Cycle 1985
- Anodic Nitridation of Silicon-Dioxide 1984
- Enhancement of Hot-Electron Currents in Graded-Gate-Oxide (GGO) MOSFETs 1984
- Elevated Source/Drain MOSFET 1984
- A New Device Interconnect Scheme for Sub-Micron VLSI 1984
- A Multiwafer Plasma System for Anodic Nitridation and Oxidation IEEE Electron Device Letters 1984; 5: 175-177
- A JMOS Transistor Fabricated with 100-Å Low-Pressure Nitrided-Oxide Gate Dielectric IEEE Transactions on Electron Devices 1984; 31: 17-21
- Low Pressure, Nitrided-Oxide as a Thin Gate Dielectric for MOSFETs Journal of Electrochemical Society 1983; 130: 1139-1144
- Anodic Si3N4 Grown in a New Plasma Reactor 1983
- Composition and Electrical Properties of Nitrided-Oxide and Re-Oxidized Nitrided-Oxide 1983
- Sealed-Interface Local Oxidation Technology Transactions on Electron Devices 1982; 29: 554-561
- Electrical Properties of MOS Devices Made with SILO Technology 1982
- Nitrided-Oxide, Thin Gate Dielectric for MOS Devices 1982
- Selective Oxidation Technologies for High Density MOS IEEE Electron Device Letters 1981; 2: 244-247
- A 64 Kbit MOS Dynamic RAM with Novel Memory Capacitor IEEE Journal of Solid-State Circuits 1980; 15: 184-189
- Synthesis of Piecewise-Linear Networks IEE Journal of Electronic Circuits and Systems 1978; 2: 102-108