S Simon Wong
Professor of Electrical Engineering, Emeritus
Bio
Wong studies the fabrication and design of high-performance integrated circuits. His work focuses on understanding and overcoming the limitations of circuit performance imposed by device and technology.
Academic Appointments
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Emeritus Faculty, Acad Council, Electrical Engineering
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Member, Bio-X
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Member, Wu Tsai Neurosciences Institute
Honors & Awards
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Fellow, IEEE
Boards, Advisory Committees, Professional Organizations
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Adviser, Atheros Qualcomm (1998 - 2018)
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Board Director, Pericom Semiconductor (2006 - 2015)
Professional Education
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PhD, UC Berkeley (1983)
2024-25 Courses
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Independent Studies (6)
- Master's Thesis and Thesis Research
EE 300 (Aut, Win, Spr) - Special Studies and Reports in Electrical Engineering
EE 191 (Aut, Win, Spr) - Special Studies and Reports in Electrical Engineering
EE 391 (Aut, Win, Spr) - Special Studies and Reports in Electrical Engineering (WIM)
EE 191W (Aut, Win, Spr) - Special Studies or Projects in Electrical Engineering
EE 190 (Aut, Win, Spr) - Special Studies or Projects in Electrical Engineering
EE 390 (Aut, Win, Spr)
- Master's Thesis and Thesis Research
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Prior Year Courses
2021-22 Courses
- Circuits I
EE 101A (Win) - Circuits II
EE 101B (Spr)
- Circuits I
Stanford Advisees
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Doctoral Dissertation Reader (AC)
George Alexopoulos, Wei-Chen Chen, Xiangjin Wu -
Master's Program Advisor
Isabela David Rodrigues
All Publications
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An international study presenting a federated learning AI platform for pediatric brain tumors.
Nature communications
2024; 15 (1): 7615
Abstract
While multiple factors impact disease, artificial intelligence (AI) studies in medicine often use small, non-diverse patient cohorts due to data sharing and privacy issues. Federated learning (FL) has emerged as a solution, enabling training across hospitals without direct data sharing. Here, we present FL-PedBrain, an FL platform for pediatric posterior fossa brain tumors, and evaluate its performance on a diverse, realistic, multi-center cohort. Pediatric brain tumors were targeted due to the scarcity of such datasets, even in tertiary care hospitals. Our platform orchestrates federated training for joint tumor classification and segmentation across 19 international sites. FL-PedBrain exhibits less than a 1.5% decrease in classification and a 3% reduction in segmentation performance compared to centralized data training. FL boosts segmentation performance by 20 to 30% on three external, out-of-network sites. Finally, we explore the sources of data heterogeneity and examine FL robustness in real-world scenarios with data imbalances.
View details for DOI 10.1038/s41467-024-51172-5
View details for PubMedID 39223133
View details for PubMedCentralID PMC11368946
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Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects.
ACS nano
2024
Abstract
Hafnia-based ferroelectric (FE) thin films are promising candidates for semiconductor memories. However, a fundamental challenge that persists is the lack of understanding regarding dimensional scaling, including thickness scaling and area scaling, of the functional properties and their heterogeneity in these films. In this work, excellent ferroelectricity and switching endurance are demonstrated in 4 nm-thick Hf0.5Zr0.5O2 (HZO) capacitors with molybdenum electrodes in capacitors as small as 65 nm × 45 nm in size. The HZO layer in these capacitors can be crystallized into the ferroelectric orthorhombic phase at the low temperature of 400 °C, making them compatible for back-end-of-line (BEOL) FE memories. With the benefits of thickness scaling, low operation voltage (1.2 V) is achieved with high endurance (>1010 cycles); however, a significant fatigue regime is noted. We observed that the bottom electrode, rather than the top electrode, plays a dominant role in the thickness scaling of HZO ferroelectric behavior. Furthermore, ultrahigh switched polarization (remanent polarization 2Pr ∼ 108 μC cm-2) is observed in some nanoscale devices. This study advances the understanding of dimensional scaling effects in HZO capacitors for high-performance FE memories.
View details for DOI 10.1021/acsnano.4c01992
View details for PubMedID 38916257
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A New 1C1T1R nv-TCAM with Simultaneously Hybrid Ferroelectricity and Memristor Layers Feasible for Ultra-highly-dense and High-performance In-memory-searching
IEEE. 2024: 103-105
View details for DOI 10.1109/EDTM58488.2024.10512294
View details for Web of Science ID 001223367200250
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Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering.
ACS applied materials & interfaces
2023
Abstract
Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal-oxide-semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors that are nearly free of polarization "wake-up"─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T-O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. These results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.
View details for DOI 10.1021/acsami.3c08895
View details for PubMedID 37856882
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First Observation of Ultra-high Polarization (~ 108 μC/cm2) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes
IEEE Symposium on VLSI Technology and Circuits
2023
View details for DOI 10.23919/VLSITechnologyandCir57934.2023.10185240
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Foundry Monolithic 3D BEOL Transistor + Memory Stack: Iso-performance and Iso-footprint BEOL Carbon Nanotube FET+RRAM vs. FEOL Silicon FET+RRAM
IEEE Symposium on VLSI Technology and Circuits
2023
View details for DOI 10.23919/VLSITechnologyandCir57934.2023.10185414
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Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors
IEEE ELECTRON DEVICE LETTERS
2022; 43 (2): 212-215
View details for DOI 10.1109/LED.2021.3136309
View details for Web of Science ID 000748371400015
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4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory
IEEE Symposium on VLSI Technology and Circuits
2022
View details for DOI 10.1109/VLSITechnologyandCir46769.2022.9830242
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8-Layer 3D Vertical Ru/AlOxNy/TiN RRAM with Mega-Ω Level LRS for Low Power and Ultrahigh-density Memory
IEEE Symposium on VLSI Technology and Circuits
2022
View details for DOI 10.1109/VLSITechnologyandCir46769.2022.9830164
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RADAR: A Fast and Energy-Efficient Programming Technique for Multiple Bits-Per-Cell RRAM Arrays
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021; 68 (9): 4397-4403
View details for DOI 10.1109/TED.2021.3097975
View details for Web of Science ID 000686761500038
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3-D Vertical via Nitrogen-Doped Aluminum Oxide Resistive Random-Access Memory
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021; 68 (6): 2712-2716
View details for DOI 10.1109/TED.2021.3075193
View details for Web of Science ID 000652799800018
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A FORMing-Free HfO2-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory With 3-Bit-Per-Cell Storage Capability
IEEE TRANSACTIONS ON ELECTRON DEVICES
2021; 68 (6): 2699-2704
View details for DOI 10.1109/TED.2021.3074354
View details for Web of Science ID 000652799800016
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Four-Bits-Per-Memory One-Transistor-and-Eight-Resistive-Random-Access-Memory (1T8R) Array
IEEE ELECTRON DEVICE LETTERS
2021; 42 (3): 335–38
View details for DOI 10.1109/LED.2021.3055017
View details for Web of Science ID 000622098100010
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Deep COVID DeteCT: an international experience on COVID-19 lung detection and prognosis using chest CT.
NPJ digital medicine
2021; 4 (1): 11
Abstract
The Coronavirus disease 2019 (COVID-19) presents open questions in how we clinically diagnose and assess disease course. Recently, chest computed tomography (CT) has shown utility for COVID-19 diagnosis. In this study, we developed Deep COVID DeteCT (DCD), a deep learning convolutional neural network (CNN) that uses the entire chest CT volume to automatically predict COVID-19 (COVID+) from non-COVID-19 (COVID-) pneumonia and normal controls. We discuss training strategies and differences in performance across 13 international institutions and 8 countries. The inclusion of non-China sites in training significantly improved classification performance with area under the curve (AUCs) and accuracies above 0.8 on most test sites. Furthermore, using available follow-up scans, we investigate methods to track patient disease course and predict prognosis.
View details for DOI 10.1038/s41746-020-00369-1
View details for PubMedID 33514852
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Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks
IEEE TRANSACTIONS ON ELECTRON DEVICES
2020; 67 (11): 4904–10
View details for DOI 10.1109/TED.2020.3025849
View details for Web of Science ID 000584285700062
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A shallow convolutional neural network predicts prognosis of lung cancer patients in multi-institutional computed tomography image datasets
Nature Machine Intelligence
2020; 2 (5): 274–282
View details for DOI 10.1038/s42256-020-0173-6
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Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)-Part I: Accurate and Computationally Efficient Modeling
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019; 66 (12): 5139–46
View details for DOI 10.1109/TED.2019.2950606
View details for Web of Science ID 000502043000014
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Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)-Part II: Design Guidelines for Device, Array, and Architecture
IEEE TRANSACTIONS ON ELECTRON DEVICES
2019; 66 (12): 5147–54
View details for DOI 10.1109/TED.2019.2950595
View details for Web of Science ID 000502043000015
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DATASET CULLING: TOWARDS EFFICIENT TRAINING OF DISTILLATION-BASED DOMAIN SPECIFIC MODELS
IEEE. 2019: 3237–41
View details for Web of Science ID 000521828603075
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A Novel Architecture to Build Ideal-linearity Neuromorphic Synapses on a Pure Logic FinFET Platform Featuring 2.5ns PGM-time and 10(12) Endurance
IEEE. 2019: T138–T139
View details for Web of Science ID 000555822600012
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High-Density Multiple Bits-per-Cell 1T4R RRAM Array with Gradual SET/RESET and its Effectiveness for Deep Learning
IEEE. 2019
View details for Web of Science ID 000553550000083
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Deep learning to predict survival prognosis for patients with non-small cell lung cancer using images and clinical data
AMER ASSOC CANCER RESEARCH. 2018
View details for DOI 10.1158/1538-7445.AM2018-3048
View details for Web of Science ID 000468819500411
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Selector Requirements for Tera-Bit Ultra-High-Density 3D Vertical RRAM
IEEE. 2018: 107–8
View details for Web of Science ID 000465075200039
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Fault-Tolerant FPGA with Column-Based Redundancy and Power Gating Using RRAM
IEEE TRANSACTIONS ON COMPUTERS
2017; 66 (6): 946-956
View details for DOI 10.1109/TC.2016.2634533
View details for Web of Science ID 000401084600003
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Analysis and Design of a Passive Switched-Capacitor Matrix Multiplier for Approximate Computing
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2017; 52 (1): 261-271
View details for DOI 10.1109/JSSC.2016.2599536
View details for Web of Science ID 000395641800023
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LOGNET: ENERGY-EFFICIENT NEURAL NETWORKS USING LOGARITHMIC COMPUTATION
IEEE. 2017: 5900–5904
View details for Web of Science ID 000414286206013
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TPAD: Hardware Trojan Prevention and Detection for Trusted Integrated Circuits
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
2016; 35 (4): 521-534
View details for DOI 10.1109/TCAD.2015.2474373
View details for Web of Science ID 000372995000001
- A Deep Learning Framework to Predict Survival from Medical Images of Lung Cancer Patients Conference on Neural Information Processing Systems, Workshop on Machine Learning for Health 2016
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Switch Application in FPGA
RESISTIVE SWITCHING: FROM FUNDAMENTALS OF NANOIONIC REDOX PROCESSES TO MEMRISTIVE DEVICE APPLICATIONS
2016: 695-713
View details for Web of Science ID 000459595300025
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Fault-tolerant FPGA with Column-based Redundancy and Power Gating Using RRAM
IEEE. 2016: 409–14
View details for DOI 10.1109/ISVLSI.2016.86
View details for Web of Science ID 000389508400070
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A 2.5GHz 7.7TOPS/W Switched-Capacitor Matrix Multiplier with Co-designed Local Memory in 40nm
IEEE. 2016: 418–U587
View details for Web of Science ID 000382151400173
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Monolithic 3-D FPGAs
PROCEEDINGS OF THE IEEE
2015; 103 (7): 1197-1210
View details for DOI 10.1109/JPROC.2015.2433954
View details for Web of Science ID 000356806900012
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Compact One-Transistor-N-RRAM Array Architecture for Advanced CMOS Technology
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2015; 50 (5): 1299-1309
View details for DOI 10.1109/JSSC.2015.2402217
View details for Web of Science ID 000354186300020
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All-Metal-Nitride RRAM Devices
IEEE ELECTRON DEVICE LETTERS
2015; 36 (1): 29-31
View details for DOI 10.1109/LED.2014.2367542
View details for Web of Science ID 000347045200011
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FACTORIZATION FOR ANALOG-TO-DIGITAL MATRIX MULTIPLICATION
IEEE. 2015: 1061–65
View details for Web of Science ID 000427402901036
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The Role of Ti Capping Layer in HfOx-Based RRAM Devices
IEEE ELECTRON DEVICE LETTERS
2014; 35 (9): 912-914
View details for DOI 10.1109/LED.2014.2334311
View details for Web of Science ID 000341574200007
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Current Conduction Mechanism of Nitrogen-Doped AlOx RRAM
IEEE TRANSACTIONS ON ELECTRON DEVICES
2014; 61 (6): 2158-2163
View details for DOI 10.1109/TED.2014.2319074
View details for Web of Science ID 000338026200081
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Low-Temperature Monolithic Three-Layer 3-D Process for FPGA
IEEE ELECTRON DEVICE LETTERS
2013; 34 (8): 1044-1046
View details for DOI 10.1109/LED.2013.2266111
View details for Web of Science ID 000323911800037
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Nanometer-Scale HfOx RRAM
IEEE ELECTRON DEVICE LETTERS
2013; 34 (8): 1005-1007
View details for DOI 10.1109/LED.2013.2265404
View details for Web of Science ID 000323911800024
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Impact of III-V and Ge Devices on Circuit Performance
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
2013; 21 (7): 1189-1200
View details for DOI 10.1109/TVLSI.2012.2210450
View details for Web of Science ID 000320946200002
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Effect of Wordline/Bitline Scaling on the Performance, Energy Consumption, and Reliability of Cross-Point Memory Array
ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS
2013; 9 (1)
View details for DOI 10.1145/2422094.2422103
View details for Web of Science ID 000315457200009
- Trusted Integrated Chips Integrating Non-Volatile Memory with CMOS 2013
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First Demonstration of RRAM Patterned by Block Copolymer Self-Assembly
IEEE International Electron Devices Meeting (IEDM)
IEEE. 2013
View details for Web of Science ID 000346509500136
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Characterization of Geometric Leakage Current of GeO2 Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions
IEEE ELECTRON DEVICE LETTERS
2012; 33 (11): 1520-1522
View details for DOI 10.1109/LED.2012.2211856
View details for Web of Science ID 000310387100003
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A superheterodyne receiver front-end with on-chip automatically Q-tuned notch filters
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
2012; 71 (3): 453-463
View details for DOI 10.1007/s10470-011-9771-x
View details for Web of Science ID 000304101200011
- Nonvolatile 3D-FPGA with Monolithically Stacked RRAM-Based Configuration Memory 2012
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Scaling Challenges for the Cross-point Resistive Memory Array to Sub-10nm Node - An Interconnect Perspective
4th IEEE International Memory Workshop (IMW)
IEEE. 2012
View details for Web of Science ID 000332985300029
- Scaling Challenges for the Cross-point Resistive Memory Array to the Single-digit-nm Node – An Interconnect Perspective 2012
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Array Architecture for a Nonvolatile 3-Dimensional Cross-Point Resistance-Change Memory
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2011; 46 (9): 2158-2170
View details for DOI 10.1109/JSSC.2011.2148430
View details for Web of Science ID 000294169700018
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A 65 nm CMOS fully-integrated dynamic reconfigurable differential power amplifier with high gain in both bands
MICROELECTRONICS JOURNAL
2011; 42 (6): 855-862
View details for DOI 10.1016/j.mejo.2011.04.004
View details for Web of Science ID 000292408100005
- A 60GHz Digitally Controlled RF Beamforming Array in 65nm CMOS with Off-Chip Antennas 2011
- Forming-Free Nitrogen-Doped AlOx RRAM with Sub-μA Programming Current 2011
- 3D Field Programmable Gate Array 2011
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Semiconductor crystal islands for three-dimensional integration
54th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication
A V S AMER INST PHYSICS. 2010: C6P53-C6P58
View details for DOI 10.1116/1.3511473
View details for Web of Science ID 000285015200113
- Leakage Current Analysis of Lateral p+/n Ge Based Diode Activated at Low Temperature for Three-Dimensional Integrated Circuit (3D-ICs) 2010
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Leakage Current Analysis of Lateral p+/n Ge Based Diode Activated at Low Temperature for Three-Dimensional Integrated Circuit (3D-ICs)
Symposium on Processing, Materials, and Integration of Damascene and 3D Interconnects held during the 218th Meeting of the Electrochemical-Society
ELECTROCHEMICAL SOC INC. 2010: 35–39
View details for DOI 10.1149/1.3501032
View details for Web of Science ID 000315439100003
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Optimization of Driver Preemphasis for On-Chip Interconnects
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
2009; 56 (9): 2033-2041
View details for DOI 10.1109/TCSI.2008.2011593
View details for Web of Science ID 000269841000001
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RESET Mechanism of TiOx Resistance-Change Memory Device
IEEE ELECTRON DEVICE LETTERS
2009; 30 (7): 733-735
View details for DOI 10.1109/LED.2009.2021001
View details for Web of Science ID 000267607900012
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Elimination of Forming Process for TiOx Nonvolatile Memory Devices
IEEE ELECTRON DEVICE LETTERS
2009; 30 (7): 763-765
View details for DOI 10.1109/LED.2009.2021003
View details for Web of Science ID 000267607900022
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Reduction of Inductive Crosstalk Using Quadrupole Inductors
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2009; 44 (6): 1756-1764
View details for DOI 10.1109/JSSC.2009.2020525
View details for Web of Science ID 000266723400010
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Pi Coil: A New Element for Bandwidth Extension
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
2009; 56 (6): 454-458
View details for DOI 10.1109/TCSII.2009.2020943
View details for Web of Science ID 000267438500006
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A 60-GHz LOW-NOISE AMPLIFIER FOR 60-GHz DUAL-CONVERSION RECEIVER
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
2009; 51 (4): 885-891
View details for DOI 10.1002/mop.24200
View details for Web of Science ID 000264111800004
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The Prospect of 3D-IC
IEEE Custom Integrated Circuits Conference
IEEE. 2009: 445–448
View details for Web of Science ID 000275926300095
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Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver
2009 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PROGRAM
2009: 88-?
View details for Web of Science ID 000271941200023
- Low-Power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz Dual-Conversion Receiver 2009
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Performance Comparison between Capacitively Driven Low Swing and Conventional Interconnects for Cu and Carbon Nanotube Wire Technologies
IEEE International Interconnect Technology Conference
IEEE. 2009: 23–25
View details for Web of Science ID 000272206600007
- A High-Performance 3D-SRAM Architecture 2009
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Numerical estimation of yield in sub-100-nm SRAM design using Monte Carlo simulation
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
2008; 55 (9): 907-911
View details for DOI 10.1109/TCSII.2008.923411
View details for Web of Science ID 000258950800016
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High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts
IEEE ELECTRON DEVICE LETTERS
2008; 29 (7): 805-807
View details for DOI 10.1109/LED.2008.2000613
View details for Web of Science ID 000257626000047
- Monolithic 3D Integrated Circuits 2008
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A low-power V-band CMOS low-noise amplifier using current-sharing technique
IEEE. 2008: 964-+
View details for DOI 10.1109/ISCAS.2008.4541580
View details for Web of Science ID 000258532100245
- A Low-Power V-Band CMOS Low Noise Amplifier using Current Sharing Technique 2008
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An on-chip dipole antenna for millimeter-wave transmitters
IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
IEEE. 2008: 571–574
View details for Web of Science ID 000258748700143
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A High-speed, Low-power 3D-SRAM Architecture
IEEE Custom Integrated Circuits Conference
IEEE. 2008: 201–204
View details for Web of Science ID 000262643900045
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Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films
APPLIED PHYSICS LETTERS
2007; 91 (11)
View details for DOI 10.1063/1.2784169
View details for Web of Science ID 000249474000022
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Closed-form RC and RLC delay models considering input rise time
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
2007; 54 (9): 2001-2010
View details for DOI 10.1109/TCSI.2007.902539
View details for Web of Science ID 000249730800013
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Statistical simulation methodology for sub100 nm memory design
ELECTRONICS LETTERS
2007; 43 (16): 869-870
View details for DOI 10.1049/el:20070394
View details for Web of Science ID 000248833900016
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Performance benefits of monolithically stacked 3-D FPGA
International Symposium on Field-Programmable Gate Arrays
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2007: 216–29
View details for DOI 10.1109/TCAD.2006.887920
View details for Web of Science ID 000243953000003
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Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices
IEEE ELECTRON DEVICE LETTERS
2007; 28 (1): 14-16
View details for DOI 10.1109/LED.2006.887640
View details for Web of Science ID 000243280900006
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A superheterodyne receiver front-end with on-chip automatically Q-tuned notch filters
2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS
2007: 21-?
View details for Web of Science ID 000248148800004
- A Fully Integrated RF Front-End with Independent RX/TX Matching and +20dbm Output Power for WLAN Applications 2007
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Integrated transformer baluns for RF low noise and power amplifiers
IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
IEEE. 2006: 85–88
View details for Web of Science ID 000239086300021
- Nonvolatile SRAM Cell 2006
- Performance Benefits of Monolithically Stacked 3D-FPGA 2006
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Multiphysics modeling and impact of thermal boundary resistance in phase change memory devices
10th Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems
IEEE. 2006: 106–113
View details for Web of Science ID 000243624500013
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Integrated transformer baluns for RF low noise and power amplifiers
IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
IEEE. 2006: 69–72
View details for Web of Science ID 000245137400018
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Analysis and synthesis of on-chip spiral inductors
IEEE TRANSACTIONS ON ELECTRON DEVICES
2005; 52 (2): 176-182
View details for DOI 10.1109/TED.2004.842535
View details for Web of Science ID 000226481900007
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Scalability of RF CMOS
IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
IEEE. 2005: 53–56
View details for Web of Science ID 000230541500011
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Studies of the driving force for room-temperature microstructure evolution in electroplated copper films
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
2004; 22 (5): 2369-2374
View details for DOI 10.1116/1.1788680
View details for Web of Science ID 000225048300022
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Integrated CMOS transmit-receive switch using LC-Tuned substrate bias for 2.4-GHz and 5.2-GHz applications
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2004; 39 (6): 863-870
View details for DOI 10.1109/JSSC.2004.827809
View details for Web of Science ID 000221803600001
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Valuation of American options via basis functions
IEEE TRANSACTIONS ON AUTOMATIC CONTROL
2004; 49 (3): 374-385
View details for DOI 10.1109/TAC.2004.824466
View details for Web of Science ID 000220256400006
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Modeling and optimization of substrate resistance for RF-CMOS
IEEE TRANSACTIONS ON ELECTRON DEVICES
2004; 51 (3): 421-426
View details for DOI 10.1109/TED.2003.822586
View details for Web of Science ID 000189247400019
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A 10-GHz global clock distribution using coupled standing-wave oscillators
IEEE International Solid-State Circuits Conference
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 1813–20
View details for DOI 10.1109/JSSC.2003.818299
View details for Web of Science ID 000186249100004
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Near speed-of-light velocities for on-chip - transmission of electrical signals
SOLID STATE TECHNOLOGY
2003; 46 (5): 52-?
View details for Web of Science ID 000182953800008
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Near speed-of-light signaling over on-chip electrical interconnects
Symposium on VLSI Circuits
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 834–38
View details for DOI 10.1109/JSSC.2003.810060
View details for Web of Science ID 000182517500021
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Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films
JOURNAL OF APPLIED PHYSICS
2003; 93 (7): 3796-3804
View details for DOI 10.1063/1.1555274
View details for Web of Science ID 000181729600010
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On the accuracy of return path assumption for loop inductance extraction for 0.1 mu m technology and beyond
4th IEEE International Symposium on Quality Electronic Design
IEEE COMPUTER SOC. 2003: 401–404
View details for Web of Science ID 000182249900057
- An Integrated 5.2GHz CMOS T/R Switch with LC-Tuned Substrate Bias 2003
- Mechanism for Early Failure in Cu Dual Damascene Structure 2003
- 10GHz Clock Distribution Using Coupled Standing-Wave Oscillators 2003
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Compact modeling of high frequency phenomena for on-chip spiral inductors
Nanotechnology Conference and Trade Show (Nanotech 2003)
COMPUTATIONAL PUBLICATIONS. 2003: 360–363
View details for Web of Science ID 000223045900093
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Design of a 10GHz clock distribution network using coupled standing-wave oscillators
40th Design Automation Conference
ASSOC COMPUTING MACHINERY. 2003: 682–687
View details for Web of Science ID 000184080900125
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High-frequency characterization of on-chip digital interconnects
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2002; 37 (6): 716-725
View details for Web of Science ID 000175929500006
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A 0-dB IL 2140 +/- 30 MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS
Symposium on VLSI Circuits
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2002: 579–86
View details for Web of Science ID 000175198900007
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Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design (vol 36, pg 1480, 2001)
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2002; 37 (2): 255-255
View details for Web of Science ID 000173734300018
- High Frequency Characterization of On-Chip Digital Interconnects IEEE Journal of Solid State Circuits 2002; 37: 716-725
- Near Speed-of-Light On-Chip Electrical Interconnect 2002
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Recovery of open via after electromigration in Cu dual Damascene interconnect
40th Annual IEEE International Reliability Physics Symposium
IEEE. 2002: 435–436
View details for Web of Science ID 000176016400077
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Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design
IEEE JOURNAL OF SOLID-STATE CIRCUITS
2001; 36 (10): 1480-1488
View details for Web of Science ID 000171192400006
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A 0dB-IL, 2140 +/- 30 MHz bandpass filter utilizing Q-enhanced spiral inductors in standard CMOS
Symposium on VLSI Circuits
JAPAN SOCIETY APPLIED ELECTROMAGNETICS & MECHANICS. 2001: 15–18
View details for Web of Science ID 000173132600005
- Evidence of Dislocation Loops as a Driving Force for Self Annealing in Electroplated Cu Films 2001
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CMOS RF integrated circuits at 5 GHz and beyond
PROCEEDINGS OF THE IEEE
2000; 88 (10): 1560-1571
View details for Web of Science ID 000165853300004
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Distributed ESD protection for high-speed integrated circuits
IEEE ELECTRON DEVICE LETTERS
2000; 21 (8): 390-392
View details for Web of Science ID 000088465000007
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Physical modeling of spiral inductors on silicon
IEEE TRANSACTIONS ON ELECTRON DEVICES
2000; 47 (3): 560-568
View details for Web of Science ID 000085766300011
- Microanalysis of VLSI Interconnect Failure Modes under Short-Pulse Stress Conditions 2000
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A multi-scale random-walk thermal-analysis methodology for complex IC-interconnect systems
International Conference on Simulation of Semiconductor Processes and Devices
IEEE. 2000: 84–86
View details for Web of Science ID 000166421700020
- Quantitative Projections of Reliability and Performance for Low-k/Cu Interconnect Systems 2000
- On-Chip Inductance Modeling of VLSI Interconnects 2000
- Correlation of Stress and Texture Evolution During Self- and Thermal Annealing of Electroplated Cu Films 2000
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Kinetics of copper drift in low-kappa polymer interlevel dielectrics
IEEE TRANSACTIONS ON ELECTRON DEVICES
1999; 46 (11): 2178-2187
View details for Web of Science ID 000083256800003
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A BICMOS active substrate probe-card technology for digital testing
IEEE JOURNAL OF SOLID-STATE CIRCUITS
1999; 34 (8): 1118-1135
View details for Web of Science ID 000081755500011
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Microstructure and reliability of copper interconnects
IEEE TRANSACTIONS ON ELECTRON DEVICES
1999; 46 (6): 1113-1120
View details for Web of Science ID 000080532400007
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Ultra-low resistance, through-wafer via (TWV) technology and its applications in three dimensional structures on silicon
1998 International Conference on Solid State Devices and Materials (SSDM 98)
JAPAN SOC APPLIED PHYSICS. 1999: 2393–96
View details for Web of Science ID 000082871300046
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Barriers for copper interconnections
SOLID STATE TECHNOLOGY
1999; 42 (4): 53-?
View details for Web of Science ID 000079487500015
- Monolithic CMOS Distributed Amplifier and Oscillator 1999
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A study on substrate effects of silicon-based RF passive components
1999 IEEE MTT-S International Microwave Symposium on the Magic Touch of Microwaves
IEEE. 1999: 1625–1628
View details for Web of Science ID 000081428500373
- Kinetics of Copper Drift in Low-k Polymer Interlevel Dielectrics IEEE Transactions on Electron Devices 1999; 46: 2178-2187
- A Study on Substrate Effects of Silicon-Based RF Passive Components 1999
- Line Inductance Extraction and Modeling in a Real Chip with Power Grid 1999
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Evaluation of copper penetration in low-kappa polymer dielectrics by bias-temperature stress
Symposium N on Advanced Interconnects and Contacts, at the 1999 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 1999: 535–549
View details for Web of Science ID 000083461300076
- Effects of Plating Current Density and Solution Additive on the Microstructure and Recrystallization Rate of Electroplated Copper Films 1999
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Evaluation of copper penetration in low-kappa polymer dielectrics by bias-temperature stress
Symposium O: Low-Dielectric Constant Materials at the 1999 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 1999: 173–187
View details for Web of Science ID 000085482500021
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Lateral IGBT in thin SOI for high voltage, high speed power IC
IEEE TRANSACTIONS ON ELECTRON DEVICES
1998; 45 (10): 2251-2254
View details for Web of Science ID 000076221300024
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Electrical leakage at low-K polyimide/TEOS interface
IEEE ELECTRON DEVICE LETTERS
1998; 19 (6): 177-179
View details for Web of Science ID 000073727100001
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On-chip spiral inductors with patterned ground shields for Si-based RF IC's
1997 Symposium on VLSI Circuits
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 1998: 743–52
View details for Web of Science ID 000073300400010
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SOI MOSFET with buried body strap by wafer bonding
IEEE TRANSACTIONS ON ELECTRON DEVICES
1998; 45 (5): 1084-1091
View details for Web of Science ID 000073176500013
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Temperature-dependent thermal conductivity of single-crystal silicon layers in SOI substrates
IMECE Meeting
ASME-AMER SOC MECHANICAL ENG. 1998: 30–36
View details for Web of Science ID 000072527000003
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Electrical reliability of Cu and low-K dielectric integration
4th Symposium on Low Dielectric Constant Materials for Microelectronics Applications
MATERIALS RESEARCH SOCIETY. 1998: 317–327
View details for Web of Science ID 000077020800041
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Microstructure and mechanical properties of electroplated Cu films for Damascene ULSI metallization
Symposium on Thin-Films - Stresses and Mechanical Properties VII at the MRS Fall Meeting
MATERIALS RESEARCH SOCIETY. 1998: 137–142
View details for Web of Science ID 000075849800019
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Copper electroplating for damascene ULSI interconnects
Symposium on Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits
MATERIALS RESEARCH SOCIETY. 1998: 275–280
View details for Web of Science ID 000077430000045
- Modeling and Characterization of On-Chip Transformer 1998
- Effect of Seed Layer Texture and Surface Roughness on the Microstructure of Electroplated Copper Film 1998
- Copper Drift in Low-K Polymer Dielectrics for ULSI Metallization 1998
- Electromigration of Submicron Damascene Copper 1998
- Copper Electroplating for Damascene ULSI Interconnects 1998
- A Novel Crosstalk Isolation Structure for Bulk CMOS Power IC’s IEEE Transactions on Electron Devices 1998; 45: 1580-1586
- Lateral Emitter Controlled Thyristor (LECT) on SOI 1998
- 50 Ghz Interconnect Design in Standard Silicon Technology 1998
- Analysis and Optimization of Accumulation-Mode Varactor for RF ICs 1998
- Copper Drift in Low-K Polymer Dielectrics for ULSI Metallization 1998
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Evidence of heteroepitaxial growth of copper on beta-tantalum
APPLIED PHYSICS LETTERS
1997; 71 (21): 3069-3071
View details for Web of Science ID A1997YG83400013
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Phonon-boundary scattering in thin silicon layers
APPLIED PHYSICS LETTERS
1997; 71 (13): 1798-1800
View details for Web of Science ID A1997XY99300018
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Investigation of aluminum nitride grown by metal-organic chemical-vapor deposition on silicon
JOURNAL OF APPLIED PHYSICS
1997; 82 (6): 2990-2995
View details for Web of Science ID A1997XX99600040
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Heating mechanisms of LDMOS and LIGBT in ultrathin SOI
IEEE ELECTRON DEVICE LETTERS
1997; 18 (9): 414-416
View details for Web of Science ID A1997XR89300004
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Short-timescale thermal mapping of semiconductor devices
IEEE ELECTRON DEVICE LETTERS
1997; 18 (5): 169-171
View details for Web of Science ID A1997WU99600001
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Reactive-ion-etched diffraction-limited unstable resonator semiconductor lasers
IEEE JOURNAL OF QUANTUM ELECTRONICS
1997; 33 (2): 219-230
View details for Web of Science ID A1997WD89400012
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Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI
IEEE ELECTRON DEVICE LETTERS
1997; 18 (1): 13-15
View details for Web of Science ID A1997VZ12900005
- Microstructure and Mechanical properties of Electroplated Cu Films for Damascene ULSI Metallization 1997
- Characteristics of Ta as an Underlayer for Cu Interconnect 1997
- A Novel Methodology for Reliability Studies in Fully Depleted SOI MOSFETs 1997
- Electrical Stability of Low-K Polyimide/TEOS Interface 1997
- Polished TFT's: Surface Roughness Reduction and Its Correlation to Device Performance Improvement IEEE Transactions on Electron Devices 1997; 44: 455-463
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Electrical extraction of the in-plane dielectric constant of fluorinated polyimide
Symposium on Low-Dielectric Constant Materials III, at the 1997 MRS Spring Meeting
MATERIALS RESEARCH SOCIETY. 1997: 129–134
View details for Web of Science ID 000072112700018
- Pnonon-Boundary Scattering in Thin Silicon Layers Applied Physics Letters 1997; 71: 1798-1800
- A Quasi-Stadium Semiconductor Laser 1997
- On-Chip Spiral Inductors with Patterned Ground Shields for Si-Based RF IC’s 1997
- Effect of Texture on the Electromigration of CVD Copper 1997
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Evidence of reduced maximum E-field in Quasi-SOI MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES
1996; 43 (12): 2308-2310
View details for Web of Science ID A1996VU87900037
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Kinetics of copper drift in PECVD dielectrics
IEEE ELECTRON DEVICE LETTERS
1996; 17 (12): 549-551
View details for Web of Science ID A1996VX16300001
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Formation and high frequency CV-measurements of aluminum aluminum nitride 6H silicon carbide structures
Symposium on III-Nitride, SiC and Diamond Materials for Electronic Devices
MATERIALS RESEARCH SOCIETY. 1996: 667–672
View details for Web of Science ID A1996BG72B00103
- Lateral IGBT on Thin SOI for High-Speed Power IC Applications 1996
- Deep Sub-Micron SOI MOSFET with Buried Body Strap 1996
- Optimizing Polysilicon Thin-Film Transistor Performance with Chemical-Mechanical Polishing and Hydrogenation IEEE Electron Device Letters 1996; 17: 518-520
- Active Substrate Membrane Probe Card 1996
- The Combined Effects of Chemical-Mechanical Polishing and Hydrogenation on Poly-Si TFT’s 1996
- CMOS Latchup Characterization for LDMOS/LIGBT Power Integrated Circuits 1996
- A Power IC technology with Excellent Cross-Talk Isolation IEEE Electron Device Letters 1996; 17: 467-469
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A BICMOS active substrate probe card technology for digital testing
1996 IEEE International Solid-State Circuits Conference
I E E E. 1996: 308–309
View details for Web of Science ID A1996BF43W00124
- Temperature-Dependent Thermal Conductivity of Single Crystal Silicon Layers in SOI Substrates 1996
- Grain Structure of CVD Copper Films 1996
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A physical model for planar spiral inductors on silicon
1996 International Electron Devices Meeting
IEEE. 1996: 155–158
View details for Web of Science ID A1996BG98F00034
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High voltage LDMOS transistors in sub-micron SOI films
8th International Symposium on Power Semiconductor Devices and PCs (ISPSD 96)
I E E E. 1996: 89–92
View details for Web of Science ID A1996BF73Z00012
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LATERAL-MODE BEHAVIOR OF REACTIVE-ION-ETCHED STABLE-RESONATOR SEMICONDUCTOR-LASERS
JOURNAL OF APPLIED PHYSICS
1995; 78 (6): 4294–96
View details for DOI 10.1063/1.359831
View details for Web of Science ID A1995RU95300115
- Monolithic Stable-Resonator Semiconductor Laser 1995
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Self-heating effect in lateral DMOS on SOI
7th International Symposium on Power Semiconductor Devices and ICS (ISPSD 95)
I E E E. 1995: 136–140
View details for Web of Science ID A1995BD72A00025
- Evidence of Reduced Maximum Lateral E-Field in Quasi-SOI MOSFETs 1995
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Active substrate membrane probe card
1995 International Electron Devices Meeting
IEEE. 1995: 709–712
View details for Web of Science ID A1995BF10D00160
- Electrical and Thermal Study of Membrane Multi-Chip Module Systems 1995
- A Micromachined Array Probe Card - Characterization IEEE Transactions on Components, Packaging and Manufacturing Technology Part B: Advanced Packaging 1995; 18: 184-191
- Non-Radial Non-Uniformity in Chemo-Mechanical Polishing 1995
- A Micromachined Array Probe Card - Fabrication Process IEEE Transactions on Components, Packaging and Manufacturing Technology Part B: Advanced Packaging 1995; 18: 179-183
- An Effective Cross-Talk Isolation Structure for Power IC Applications 1995
- Reliability of Chemically Vapor Deposited (CVD) Copper Interconnections Journal of Materials Chemistry and Physics 1995; 41: 229-233
- Influence of Parasitic Capacitances on Switching Characteristics of SOI-LDMOSs 1995
- Contact Technology for High Performance Scalable BiCMOS on TFSOI IEEE Electron Device Letters 1995; 16: 424-426
- Lateral Mode Behavior of Reactive-Ion-Etched Stable-Resonator Semiconductor Lasers Journal of Applied Physics 1995; 78: 4294-4296
- Cross-Talk Prevention for Power Integrated Circuits 1995
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THE EFFECTS OF IMPACT IONIZATION ON THE OPERATION OF NEIGHBORING DEVICES AND CIRCUITS
IEEE TRANSACTIONS ON ELECTRON DEVICES
1994; 41 (9): 1603-1607
View details for Web of Science ID A1994PE02600015
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MEASUREMENT OF SUBSTRATE CURRENT IN SOI MOSFETS
IEEE ELECTRON DEVICE LETTERS
1994; 15 (4): 132-134
View details for Web of Science ID A1994NK10700006
- Parasitic Bipolar Gain in Fully Depleted n-Channel SOI MOSFET’s IEEE Transactions on Electron Devices 1994; 41: 970-977
- Application of Selective Epitaxial Silicon and Chemo-Mechanical Polishing to Bipolar Transistors IEEE Transactions on Electron Devices 1994; 41: 2343-2350
- Microstructure of CVD Copper on TiW 1994
- High-Power Diffraction-Limited Reactive-Ion-Etched Unstable-Resonator Diode Lasers 1994
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ELECTROLESS CU FOR VLSI
MRS BULLETIN
1993; 18 (6): 31-38
View details for Web of Science ID A1993LH30400003
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SERIAL-PARALLEL FFT ARRAY PROCESSOR
IEEE TRANSACTIONS ON SIGNAL PROCESSING
1993; 41 (3): 1472–76
View details for DOI 10.1109/78.205760
View details for Web of Science ID A1993KU54500051
- A Selective CVD Tungsten-Strapped Polysilicon Local Interconnection Technology IEEE Transactions on Electron Devices 1993; 40: 1223-1230
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THE EFFECTS OF HOT CARRIERS GENERATION ON THE OPERATION OF NEIGHBORING DEVICES AND CIRCUITS
1993 SYMP ON VERY-LARGE-SCALE-INTEGRATION ( VLSI ) TECHNOLOGY
JAPAN SOC APPLIED PHYSICS. 1993: 11–12
View details for Web of Science ID A1993BZ20V00003
- Development of an Active Membrane Probe Card 1993
- Membrane Multi-Chip Module Technology on Si 1993
- First Direct Beta Measurement for Parasitic Lateral Bipolar Transistors in Fully Depleted SOI MOSFET’s 1993
- Reliability of CVD Cu Buried Interconnections 1993
- The Effects of Hot Carriers Generation on the Operation of Neighboring Devices and Circuits 1993
- Serial-Parallel FFT Array Processor IEEE Transactions on Signal Processing 1993; 41: 1472-1476
- Grain Structure and Electromigration Properties of CVD Cu Metallization 1993
- CVD Cu Interconnections for VLSI Metallization 1993
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ELECTROMIGRATION PROPERTIES OF ELECTROLESS PLATED CU METALLIZATION
IEEE ELECTRON DEVICE LETTERS
1992; 13 (9): 448-450
View details for Web of Science ID A1992JJ71900002
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MONOLITHIC ALGAAS-GAAS SINGLE QUANTUM-WELL RIDGE LASERS FABRICATED WITH DRY-ETCHED FACETS AND RIDGES
IEEE JOURNAL OF QUANTUM ELECTRONICS
1992; 28 (5): 1227–31
View details for DOI 10.1109/3.135259
View details for Web of Science ID A1992HT02300001
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ALGAAS/GAAS-BASED TRIANGULAR-SHAPED RING RIDGE LASERS
APPLIED PHYSICS LETTERS
1992; 60 (14): 1658–60
View details for DOI 10.1063/1.107228
View details for Web of Science ID A1992HM46600004
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A PLANAR INTERCONNECTION TECHNOLOGY UTILIZING THE SELECTIVE DEPOSITION OF TUNGSTEN - PROCESS CHARACTERIZATION
IEEE TRANSACTIONS ON ELECTRON DEVICES
1992; 39 (4): 893–900
View details for Web of Science ID A1992HH95100020
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A PLANAR INTERCONNECTION TECHNOLOGY UTILIZING THE SELECTIVE DEPOSITION OF TUNGSTEN - MULTILEVEL IMPLEMENTATION
IEEE TRANSACTIONS ON ELECTRON DEVICES
1992; 39 (4): 901–7
View details for DOI 10.1109/16.127480
View details for Web of Science ID A1992HH95100021
- A Planar Interconnection Technology Utilizing the Selective Deposition of Tungsten – Multilevel Implementation IEEE Transactions on Electron Devices 1992; 39: 901-907
- Electromigration Properties of Electroless and CVD Cu Metallization 1992
- Array probe card 1992
- Micro-Machined Array Probe Card 1992
- Complementary Lateral Bipolar Transistor Action in a CMOS Technology IEEE Electron Device Letters 1992; 13: 312-313
- CVD Cu Interconnections for ULSI 1992
- Monolithic Integration of GaAs and Si Bipolar Devices for Optical Interconnect Systems 1992
- Measurement of Lateral Dopant Diffusion in Thin Silicide Layers IEEE Transactions on Electron Devices 1992; 60: 2333-2340
- AlGaAs/GaAs-Based Triangular-Shaped Ring Ridge Laser Applied Physics Letters 1992; 60: 1658-1660
- Electromigration Performance of Electroless Plated Copper / Pd-Silicide Metallization IEEE Electron Device Letters 1992; 13: 433-435
- Quasi-SOI MOSFETs Using Selective Epitaxy and Polishing 1992
- Monolithic AlGaAs/GaAs Single Quantum Well Ridge Lasers Fabricated with Dry-Etched Facets and Ridges IEEE Journal of Quantum Electronics 1992; 28: 1227-1231
- A Planar Interconnection Technology Utilizing the Selective Deposition of Tungsten – Process Characterization IEEE Transactions on Electron Devices 1992; 39: 893-900
- Al-Cu Interconnection Formed by Diffusing Selectively Deposited CVD Cu into Patterned Al Lines 1992
- Single-Poly Bipolar Transistor with Selective Epitaxial Silicon and Chemo-Mechanical Polishing 1992
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HIGH-GAIN LATERAL BIPOLAR ACTION IN A MOSFET STRUCTURE
IEEE TRANSACTIONS ON ELECTRON DEVICES
1991; 38 (11): 2487-2496
View details for Web of Science ID A1991GJ60100013
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ETCHED-FACET ALGAAS TRIANGULAR-SHAPED RING LASERS WITH OUTPUT COUPLING
APPLIED PHYSICS LETTERS
1991; 59 (12): 1395–97
View details for DOI 10.1063/1.105317
View details for Web of Science ID A1991GF29500001
- Implantation to Suppress Parasitic Bipolar Action in CMOS IEEE Transactions on Electron Devices 1991; 38: 355-364
- Copper Interconnection with Tungsten Cladding for ULSI 1991
- Series Resistance of Devices with Submicrometer Source/Drain Areas IEEE Electron Device Letters 1991; 12: 664-666
- Technology Limitations for N+/P+ Polycide Gate CMOS Due to Lateral Dopant Diffusion in Silicide/Polysilicon Layers IEEE Electron Device Letters 1991; 12: 696-698
- Etched-Facet AlGaAs Triangular-Shaped Ring Lasers with Output Coupling Applied Physics Letters 1991; 59: 1395-1397
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HOT-ELECTRON-INDUCED MINORITY-CARRIER GENERATION IN BIPOLAR JUNCTION TRANSISTORS
IEEE ELECTRON DEVICE LETTERS
1990; 11 (11): 490–92
View details for DOI 10.1109/55.63010
View details for Web of Science ID A1990EE94500003
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A SELF-ALIGNED NITROGEN IMPLANTATION PROCESS (SNIP) TO MINIMIZE FIELD OXIDE THINNING EFFECT IN SUBMICROMETER LOCOS
IEEE TRANSACTIONS ON ELECTRON DEVICES
1990; 37 (9): 1948-1958
View details for Web of Science ID A1990DU61600003
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EFFECT OF CLADDING LAYER THICKNESS ON THE PERFORMANCE OF GAAS-ALGAAS GRADED INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM-WELL LASERS
IEEE JOURNAL OF QUANTUM ELECTRONICS
1990; 26 (9): 1476–80
View details for DOI 10.1109/3.102624
View details for Web of Science ID A1990EK41000006
- Characterization of Lateral Bipolar Transistor Structure 1990
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A COMPLEMENTARY HIGH-CURRENT GAIN TRANSISTOR FOR USE IN A CMOS COMPATIBLE TECHNOLOGY
1990 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING
I E E E, ELECTRON DEVICES SOC & RELIABILITY GROUP. 1990: 82–85
View details for Web of Science ID A1990BS57Q00014
- Traveling-Wave Operation in a Triangular-Shaped Monolithic Semiconductor Ring Ridge Laser 1990
- A High Performance Single Chip FFT Array Processor for Wafer Scale Integration 1990
- A Complementary High Gain Transistor for Use in a CMOS Compatible Technology 1990
- Fully Monolithic Self-Aligned GaAs/AlGaAs Single Quantum Well Ridge Laser 1990
- Hot-Electron-Induced Minority-Carrier Generation in Bipolar Junction Transistors IEEE Electron Device Letters 1990; 11: 490-492
- A Self-Aligned Nitrogen Implantation Process (SNIP) to Minimize Field Oxide Thinning Effect in Submicrometer LOCOS IEEE Transactions on Electron Devices 1990; 37: 1948-1958
- Characterization of Lateral Dopant Diffusion in Silicides 1990
- Effect of Cladding Layer Thickness on the Performance of GaAs-AlGaAs Graded Index Separate Confinement Heterostructure Single Quantum-Well Lasers IEEE Journal of Quantum Electronics 1990; 26: 1476-1480
- Characterization of Lateral Dopant Diffusion in Silicides 1990
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EFFICIENT COUPLING OF OPTICAL FIBER TO SILICON PHOTODIODE
IEEE ELECTRON DEVICE LETTERS
1989; 10 (6): 255–56
View details for DOI 10.1109/55.31738
View details for Web of Science ID A1989U751800005
- Efficient Coupling of Optical Fiber to Silicon Photodiode IEEE Electron Device Letters 1989; 10: 255-256
- Hot Electron Induced Minority Carrier Generation in Bipolar Junction Transistors 1989
- Masking Considerations in Chemically Assisted Ion Beam Etching of GaAs/AlGaAs Laser Structures Journal of Electrochemical Society 1989; 136: 779-782
- A Framework to Evaluate Technology and Device Design Enhancements for MOS Integrated Circuits IEEE Journal of Solid-State Circuits 1989; 24: 118-127
- Lateral NPN Bipolar Transistor for High Current Gain Applications at Reduced Temperatures 1989
- Rectangular and L-Shaped GaAs/AlGaAs Lasers with Very High Quality Etched Facets Applied Physics Letters 1989; 54: 493-495
- A Multilevel Tungsten Interconnect Technology 1988
- A Triangular-Shaped GaAs/AlGaAs Laser 1988
- A Selective CVD Tungsten Local Interconnect Technology 1988
- High Gain Lateral Bipolar Transistor 1988
- Multilevel Tungsten Interconnect Technology 1988
- Oxygen Implantation for Internal Gettering and Reducing Carrier Lifetime Applied Physics Letters 1987; 50: 986-988
- Semiconductor Lasers with Very High Quality Etched Facets 1987
- Oxygen Implantation for Improved CMOS Latchup Immunity 1987
- HPSAC – A Silicided Amorphous-Silicon Contact and Interconnect Technology for VLSI IEEE Transactions on Electron Devices 1987; 34: 587-592
- Oxygen Implantation for Lifetime Control 1986
- A Planar Multi-Level Tungsten Interconnect Technology 1986
- Specific Contact Resistivity of TiSi2 to p+ and n+ Junctions IEEE Electron Device Letters 1985; 6: 479-481
- Anodic Nitridation of Silicon and Silicon Dioxide IEEE Transactions on Electron Devices 1985; 32: 978-982
- CMOS Well Drive-In in NH3 for Reduced Lateral Diffusion and Heat Cycle IEEE Electron Device Letters 1985; 6: 659-661
- CMOS Well Drive-In in NH3 for Reduced Lateral Diffusion and Heat Cycle 1985
- Anodic Nitridation of Silicon-Dioxide 1984
- Enhancement of Hot-Electron Currents in Graded-Gate-Oxide (GGO) MOSFETs 1984
- Elevated Source/Drain MOSFET 1984
- A New Device Interconnect Scheme for Sub-Micron VLSI 1984
- A Multiwafer Plasma System for Anodic Nitridation and Oxidation IEEE Electron Device Letters 1984; 5: 175-177
- A JMOS Transistor Fabricated with 100-Å Low-Pressure Nitrided-Oxide Gate Dielectric IEEE Transactions on Electron Devices 1984; 31: 17-21
- Low Pressure, Nitrided-Oxide as a Thin Gate Dielectric for MOSFETs Journal of Electrochemical Society 1983; 130: 1139-1144
- Anodic Si3N4 Grown in a New Plasma Reactor 1983
- Composition and Electrical Properties of Nitrided-Oxide and Re-Oxidized Nitrided-Oxide 1983
- Sealed-Interface Local Oxidation Technology Transactions on Electron Devices 1982; 29: 554-561
- Electrical Properties of MOS Devices Made with SILO Technology 1982
- Nitrided-Oxide, Thin Gate Dielectric for MOS Devices 1982
- Selective Oxidation Technologies for High Density MOS IEEE Electron Device Letters 1981; 2: 244-247
- A 64 Kbit MOS Dynamic RAM with Novel Memory Capacitor IEEE Journal of Solid-State Circuits 1980; 15: 184-189
- Synthesis of Piecewise-Linear Networks IEE Journal of Electronic Circuits and Systems 1978; 2: 102-108