Bio

Sydney is a Ph.D student in the Materials Science and Engineering department at Stanford University, co-advised by Prof. Shan X. Wang and Prof. Eric Pop. She received her B.S. in Materials Engineering from California Polytechnic State University, San Luis Obispo in 2023. Her research focuses on low dimensional magnetic materials for electronic applications.

Education & Certifications

  • B.S., California Polytechnic State University, San Luis Obispo, Materials Engineering (2023)

Contact

  • Academic
    sfultzwa@stanford.edu
    University - Student Department: Materials Science and Engineering Position: Graduate
    University - Student Department: Materials Science and Engineering Position: Graduate

Additional Info

  • Mail Code: 4034

All Publications

  • High-Field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors. ACS nano Su, H., Lee, Y., Pena, T., Fultz-Waters, S., Kang, J., Koroglu, C., Wahid, S., Newcomb, C. J., Song, Y. S., Wong, H. P., Wang, S. X., Pop, E. 2025

    Abstract

    Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (4 nm) amorphous indium tin oxide (ITO) transistors with scanning thermal microscopy (SThM) and multiphysics simulations. The ITO devices break irreversibly at channel temperatures of 180 and 340 °C on SiO2 and HfO2 substrates, respectively, with failure primarily caused by thermally-induced compressive strain near the device contacts. Combining SThM measurements with simulations allows us to estimate a thermal boundary conductance of 35 ± 12 MWm-2K-1 for ITO on SiO2 and 51 ± 14 MWm-2K-1 for ITO on HfO2. The latter also enables significantly higher breakdown power due to better heat dissipation and closer thermal expansion matching. These findings provide insights into the thermo-mechanical limitations of indium-based amorphous oxide transistors, which are important for more reliable and high-performance logic and memory applications.

    View details for DOI 10.1021/acsnano.5c01572

    View details for PubMedID 40259618