All Publications


  • Fractional Chern mosaic in supermoiré graphene PHYSICAL REVIEW RESEARCH Kwan, Y. H., Tan, T., Devakul, T. 2025; 7 (3)

    View details for DOI 10.1103/srgm-9ybc

    View details for Web of Science ID 001585678000010

  • Variational Wave-Function Analysis of the Fractional Anomalous Hall Crystal. Physical review letters Tan, T., May-Mann, J., Devakul, T. 2025; 135 (3): 036604

    Abstract

    We propose fractional anomalous Hall crystals (FAHCs) as possible ground states of strongly interacting electrons in parent bands with Berry curvature. FAHCs are exotic states of matter that spontaneously break continuous translation symmetry to form a fractional Chern insulator. We construct a unified family of variational wave functions that describe FAHCs and their competing states in the presence of uniform parent Berry curvature. We calculate their variational energy with Coulomb interactions semianalytically in the thermodynamic limit. Our analysis reveals that FAHCs can be energetically favorable over both Wigner crystals and integer anomalous Hall crystals for sufficiently strong interactions or flat dispersion.

    View details for DOI 10.1103/dd2d-kk3w

    View details for PubMedID 40758038

  • Fractional Quantum Anomalous Hall Effect in a Singular Flat Band. Physical review letters Yang, W., Zhai, D., Tan, T., Fan, F. R., Lin, Z., Yao, W. 2025; 134 (19): 196501

    Abstract

    In the search of fractional quantum anomalous Hall (FQAH) effect, the conventional wisdom is to start from a flat Chern band isolated from the rest of the Hilbert space by band gaps, so that many-body interaction can be projected to a landscape that mimics a Landau level. Singular flat bands (SFB), which share protected touching points with other dispersive bands, represent another type of flat landscapes differing from Landau levels and Chern bands in topological and geometric properties. Here we report the finding of FQAH phases in a SFB, which emerges in the bipartite limit of the nearest-neighbor tight-binding model of twisted bilayer MoTe_{2}. At 1/3 and 2/3 filling of the SFB, FQAH effects are demonstrated using density matrix renormalization group calculations with all bands, as well as exact diagonalization calculations with the two touching bands. Gapping the band touching can turn the SFB into a nearly flat Chern band, but counterintuitively this suppresses the FQAH effect, as the gap opening introduces strong inhomogeneity to the quantum geometry. An optical scheme to realize such SFB for cold atoms is provided. Our findings uncover a new arena for the exploration of fractional quantum Hall physics beyond the Landau level and Chern insulator paradigms.

    View details for DOI 10.1103/PhysRevLett.134.196501

    View details for PubMedID 40446263

  • Fractional Quantum Anomalous Hall Effect in a Singular Flat Band PHYSICAL REVIEW LETTERS Yang, W., Zhai, D., Tan, T., Fan, F., Lin, Z., Yao, W. 2025; 134 (19)
  • Magnetic and nematic order of Bose-Fermi mixtures in moiré superlattices of two-dimensional semiconductors PHYSICAL REVIEW B Fan, F., Tan, T., Xiao, C., Yao, W. 2025; 111 (15)
  • Importance of electron-phonon coupling near the electron-liquid to Wigner-crystal transition in two-dimensional atomically thin materials PHYSICAL REVIEW B Tan, T., Calvera, V., Kivelson, S. A. 2024; 110 (24)
  • Designing Topology and Fractionalization in Narrow Gap Semiconductor Films via Electrostatic Engineering. Physical review letters Tan, T., Reddy, A. P., Fu, L., Devakul, T. 2024; 133 (20): 206601

    Abstract

    We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate that, for realistic material parameters, these bands are capable of hosting correlated topological phases such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases at zero magnetic field. Our results provide a path toward the realization of fractionalized topological states in a broad range of materials.

    View details for DOI 10.1103/PhysRevLett.133.206601

    View details for PubMedID 39626729

  • Parent Berry Curvature and the Ideal Anomalous Hall Crystal PHYSICAL REVIEW X Tan, T., Devakul, T. 2024; 14 (4)