All Publications


  • The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics International Reliability Conference Chang, Y., Tsai, W., McIntyre, P. 2022
  • New Ferroelectrics for Neuromorphic and Storage Class Memory Saini, B., Tsai, W., McIntyre, P. SRC nCORE IMPACT Center. 2022
  • Performance benchmarking of spin-orbit transfer magnetic RAM (SOT-MRAM) for deep neural network (DNN) accelerators International Memory Workshop Luo, Y., Yu, S., Wang, S. 2022
  • CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories Adv. Electron. Mater. Yu, Z., Wong, P., Tsai, W., McIntyre, P. 2022; 2101258 (1)
  • Energy Efficient Computing with High Density, Field Free STT Assisted SOT MRAM Magnetic Recording Conference (TMRC) 2022 Hwang, W., Bao, X., tsai, W., Wang, S. 2022
  • Wake-up Free, BEOL Compatible, Low Operation Voltage (1.2 V), and High Endurance HZO FeRAM Scaled to 40 nm × 40 nm Size with Mo Electrodes IEDM Huang, F., tsai, W., Wong, H., McIntyre, P., Wong, S. 2022
  • Experimental Demonstration of BEOL-Compatible, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Multiple MTJs Sharing the Same SOT Line IEDM Hwang, W., Bao, X., tsai, W., Wang, S. 2022
  • Energy Efficient Computing with High Density, Field Free STT Assisted SOT MRAM (SAS TMRC Hwang, W., Bao, X., tsai, W., Wang, S. 2022
  • Experimental Demonstration of BEOL-Compatible, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with One or Multiple Bits per SOT Programming Line IEDM 2022 Hwang, W., Bao, X., Tsai, W., Wang, S. 2022
  • Low Temperature (350 °C) Annealing for Ferroelectric Hf0.5Zr0.5O2 Thin Films Materials Research Society 2021. Late news Yu, Y., Tsai, W., McIntyre, P. 2021
  • High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 1e8 Cycles IEDM Lin, Z., Tsai, W., McIntyre, P., Ye, P. 2021
  • Towards a High-Density SOT-MRAM for On-Chip Embedded Memory Applications NMTRI, Stanford Hwang, W., Tsai, W., Wang, S. 2021
  • CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications IEDM Yu, Y., Wong, P., Tsai, W., McIntyre, P. 2021
  • Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer Applied Physics Letters Xue, F., Tsai, W., Wang, S. 2021
  • Tunable Spin-Orbit Torque Efficiency in In-plane and Perpendicular Magnetized [Pt/Co]n Multilayer Applied Physics Letters Xue, F., Tsai, W., Wang, S. 2021
  • Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in antiferromagnetic MnPd3 Nature Materials DC, M., Tsai, W., Wang, S. 2021
  • Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory Journal of the Electron Devices Society Li, X., Wang, S., Tsai, W., Lin, S. 2020
  • Memory Technologies for Emerging Computing Applications Strategic Materials Conference Tsai, W., McIntyre, P., Wang, S., Kummel, A., Datta, S. 2020
  • Large and Robust Charge-to-Spin Conversion in Sputtered Weyl Semimetal WTex with Structural Disorder Nature Materials Li, X., Xue, F., Lin, S., Tsai, W., Suzuki, Y., Wang, S. 2020
  • Emerging Memory Devices, 2019 IRDS Roadmap, Beyond CMOS Li, X., Lin, S., Tsai, W. 2020
  • Accelerating Deep Neural Networks in Processing-in-Memory Platforms: Analog or Digital Approach? IEEE Computer Society Annual Symposium on VLSI Fan, D., Lin, S., Tsai, W. 2019
  • Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 Hetero-junction Tunnel FETs IEDM Pandey, R., Datta, S., Tsai, W. 2016
  • Record high current density and low contact resistance in MoS2 FETs by ion doping VLSI-TSA Symposium Fathipour, S., Seabaugh, A., Yeh, L., Tsai, W. 2016
  • Demonstration of Black Phosporous P-MOSFETs with h-BN/Al2O3 Bilayer Gate Dielectric: Achiving Ion = 850μA/μm, gm = 340μS/μm, EOT = 2nm and Rc = 0.58kΩ•μm IEDM Yang, L., Ye, P., Yeh, L., Tsai, W. 2016
  • CHALLENGES AND PROGRESS IN III-V MOSFETs FOR CMOS CIRCUITS International Journal of High Speed Electronics and Systems Tsai, W., Lee, J., OKTYABRSKY, S., KOVESHNIKOV, S. 2008
  • Performance comparison of sub 1 nm sputtered TiN/HfO2 nMOS and pMOSFETs IEDM Tsai, W., Ragnarsson, L., Heyns, M. 2003
  • Variation of composition of sputtered TiN films as a function of target nitridation, thermal anneal, and substrate topography Appl. Phys. Lett. Tsai, W., Delfino, M. 1995; 67 (220)