Contact

  • Work
    wtsaia@stanford.edu
    University - Staff Department: Materials Science and Engineering Position: Exec. Director, Microelectronics Co-design research center
    • 476 LOMITA MALL
    • STANFORD,  California  94305 

Additional Info

  • Mail Code: 4045

All Publications

  • Experimental Demonstration of Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with Four Bits per SOT Programming Line VLSI Symposium Hwang, W., Xue, F., Tsai, W., Bao, X., Wang, S. 2024
  • On-Device Continual Learning with STT-Assisted-SOT MRAM based In-Memory Computing IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS Zhang, F., Tsai, W., Wang, S., Fan, D., Hwang, W., Xue, F. 2024
  • Atomic Layer Deposition of WO3-doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors Nature Communications Yoo, C., Hartanto, J., Tsai, W., McIntyre, P. 2024
  • Thermal optimization of two-terminal SOT-MRAM Journal of Applied Physics Su, H., Tsai, W., Wang, S., Pop, E. 2024; 135
  • Efficient Memory Integration: MRAM-SRAM Hybrid Accelerator for Sparse On-Device Learning Design Automation Conference Zhang, F., Wang, S., Tsai, W., Fan, D., Hwang, W., Xue, F. 2024
  • Atomic Layer Deposition of WO3-doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors Nature Communications Yoo, C., Tsai, W., Meng, ., McIntyre, P., Hartano, J., Saini, B. 2024
  • Dimensional Scaling of Ferroelectric Properties of Hafnia-Zirconia Thin Films: Electrode Interface Effects ACS Nano Huang, F., Saini, B., Tsai, W., Wong, P., McIntyre, P., Wong, S. 2024
  • Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films 2 Induced by Interface Engineering ACS Appl. Mater. Interfaces Huang, F., Tsai, W., McIntyre, P., Wong, S. 2023
  • Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co]N Nature Comm. Xue, F., Bao, X., Tsai, W., Wang, S. 2023
  • Energy-Efficient Computing With High-Density, Field-Free STT-Assisted SOT-MRAM IEEE TRANSACTIONS ON MAGNETICS Hwang, W., Tsai, W., Bao, X., Wang, S. 2023
  • Atomic Layer Deposition of WOX-doped In2O3 for High-Performance BEOL-Compatible Transistors Materials Research Society , Fall 2023 Yoo, C., Tsai, W., Baniecki, J., McIntyre, P. 2023
  • Field-Induced Ferroelectric Phase Evolution During Polarization “Wake-Up” in Hf0.5Zr0.5O2 Thin Film Capacitors Advanced Electronic Materials Saini, B., Baniecki, J., Tsai, W., McIntyre, P. 2023
  • Cryogenic investigation of polarization switching in ultra-thin HZO ferroelectric capacitors Stanford Non-volatile Memory Technology Research Initiative 2023 Saini, B., Tsai, W., McIntyre, P. 2023
  • Atomic Layer Deposition of WO3 doped In2O3 for High Performance BEOL Compatible Transistors 54th IEEE Semiconductor Interface Specialists Conference Yoo, C., Tsai, W., McIntyre, P. 2023
  • Unconventional materials and fabrications for high- density SOT-MRAM with multi-bit MTJs on shared SOT line Stanford NMTRI Xue, F., Tsai, W., Wang, S. 2023
  • Observation of anti-damping spin–orbit torques generated by in-plane and out-of-plane spin polarizations in MnPd3 Nature Materials DC, M., Hou, V., Xue, F., Lin, S., Tsai, W., Tsymbal, E., Wang, W., Wang, S. X. 2023
  • Cryogenic investigation of polarization switching in ultra-thin HZO ferroelectric capacitors 2023 Materials Research Society Fall Meeting Saini, B., Tsai, W., McIntyre, P. 2023
  • 2-terminal SOT-MRAM at Deeply Scaled Technology Nodes with 1x nm MTJ Critical Dimension Stanford NMTRI Hwang, W., Tsai, W., Wang, S. 2023
  • Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films Solid State Electronics Saini, B., Choi, Y., Huang, F., Tsai, W., McIntyre, P. 2023
  • Continual Learning with STT-Assisted-SOT MRAM based In-Memory Computing Design Automation Conference Zhang, F., Tsai, W., Wang, S., Fan, D. 2023
  • First Observation of Ultra-high Polarization (~108 μC/cm2) in Nanometer Scaled High Performance Ferroelectric HZO Capacitors with Mo Electrodes VLSI Symposium Huang, F., Tsai, W., Wong, P., McIntyre, P. 2023
  • Enhanced spin-orbit torque by interfacial spin-orbit precession in Mg-capped Pt/Co in-plane system detected by spin-wave coupling Nature Materials Xue, F., Tsai, W., Hwang, W., Wang, S. 2023
  • The Field-dependence Endurance Model and Its Mutual Effect in Hf-based Ferroelectrics International Reliability Conference Chang, Y., Tsai, W., McIntyre, P., Liao, P., Yu, Z., Lin, Y. 2022
  • New Ferroelectrics for Neuromorphic and Storage Class Memory Saini, B., Tsai, W., McIntyre, P. SRC nCORE IMPACT Center. 2022
  • Performance benchmarking of spin-orbit transfer magnetic RAM (SOT-MRAM) for deep neural network (DNN) accelerators International Memory Workshop Luo, Y., Yu, S., Wang, S., Tsai, W. 2022
  • CeO2 Doping of Hf0.5Zr0.5O2 Thin Films for High Endurance Ferroelectric Memories Adv. Electron. Mater. Yu, Z., Wong, P., Tsai, W., McIntyre, P., Baniecki, J., Chang, C., Mehta, A. 2022; 2101258 (1)
  • Phase Evolution with Wake-Up Effect in HZO Thin Film Capacitors using Synchrotron X-ray Diffraction Semiconductor Interface Specialists Conference Saini, B., Choi, Y., Tsai, W., McIntyre, P. 2022
  • Nanocrystallite Seeding of Metastable Ferroelectric Phase Formation in Atomic Layer-Deposited Hafnia−Zirconia Alloys ACS Applied Materials & Interfaces Yu, Z., Saini, B., Wong, P., Tsai, W., McIntyre, P., Huang, F., Baniecki, J., Mehta, A. 2022
  • Energy Efficient Computing with High Density, Field Free STT Assisted SOT MRAM Magnetic Recording Conference (TMRC) 2022 Hwang, W., Bao, X., Tsai, W., Wang, S. 2022
  • Wake-up Free, BEOL Compatible, Low Operation Voltage (1.2 V), and High Endurance HZO FeRAM Scaled to 40 nm × 40 nm Size with Mo Electrodes IEDM Huang, F., Tsai, W., Wong, H., McIntyre, P., Wong, S. 2022
  • Energy Efficient Computing with High Density, Field Free STT Assisted SOT MRAM (SAS) TMRC Hwang, W., Bao, X., Tsai, W., Wang, S. 2022
  • Experimental Demonstration of BEOL-Compatible, Field-Free STT-Assisted SOT-MRAM (SAS-MRAM) with One or Multiple Bits per SOT Programming Line IEDM 2022 Hwang, W., Bao, X., Tsai, W., Wang, S. 2022
  • CeO2-Doped Hf0.5Zr0.5O2 Ferroelectrics for High Endurance Embedded Memory Applications IEDM Yu, Y., Wong, P., Tsai, W., McIntyre, P. 2021
  • High-Peformance BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs Enabled by Channel Length Scaling down to 7 nm: Achieving Performance Enhancement with Large Memory Window of 2.2 V, Long Retention > 10 years and High Endurance > 1e8 Cycles IEDM Lin, Z., Tsai, W., McIntyre, P., Ye, P. 2021
  • Towards a High-Density SOT-MRAM for On-Chip Embedded Memory Applications NMTRI, Stanford Hwang, W., Tsai, W., Wang, S. 2021
  • Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer Applied Physics Letters Xue, F., Tsai, W., Wang, S. 2021
  • Tunable Spin-Orbit Torque Efficiency in In-plane and Perpendicular Magnetized [Pt/Co]n Multilayer Applied Physics Letters Xue, F., Tsai, W., Wang, S. 2021
  • Observation of anti-damping spin-orbit torques generated by in-plane and out-of-plane spin polarizations in antiferromagnetic MnPd3 Nature Materials DC, M., Tsai, W., Wang, S. 2021
  • Low Temperature (350 °C) Annealing for Ferroelectric Hf0.5Zr0.5O2 Thin Films Materials Research Society 2021. Late news Yu, Y., Tsai, W., McIntyre, P. 2021
  • Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory Journal of the Electron Devices Society Li, X., Wang, S., Tsai, W., Lin, S. 2020
  • Memory Technologies for Emerging Computing Applications Strategic Materials Conference Tsai, W., McIntyre, P., Wang, S., Kummel, A., Datta, S. 2020
  • Large and Robust Charge-to-Spin Conversion in Sputtered Weyl Semimetal WTex with Structural Disorder Nature Materials Li, X., Xue, F., Lin, S., Tsai, W., Suzuki, Y., Wang, S. 2020
  • Emerging Memory Devices, 2019 IRDS Roadmap, Beyond CMOS Li, X., Lin, S., Tsai, W. 2020
  • Accelerating Deep Neural Networks in Processing-in-Memory Platforms: Analog or Digital Approach? IEEE Computer Society Annual Symposium on VLSI Fan, D., Lin, S., Tsai, W. 2019
  • Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 Hetero-junction Tunnel FETs IEDM Pandey, R., Datta, S., Tsai, W. 2016
  • Record high current density and low contact resistance in MoS2 FETs by ion doping VLSI-TSA Symposium Fathipour, S., Seabaugh, A., Yeh, L., Tsai, W. 2016
  • Demonstration of Black Phosporous P-MOSFETs with h-BN/Al2O3 Bilayer Gate Dielectric: Achiving Ion = 850μA/μm, gm = 340μS/μm, EOT = 2nm and Rc = 0.58kΩ•μm IEDM Yang, L., Ye, P., Yeh, L., Tsai, W. 2016
  • CHALLENGES AND PROGRESS IN III-V MOSFETs FOR CMOS CIRCUITS International Journal of High Speed Electronics and Systems Tsai, W., Lee, J., OKTYABRSKY, S., KOVESHNIKOV, S. 2008
  • Performance comparison of sub 1 nm sputtered TiN/HfO2 nMOS and pMOSFETs IEDM Tsai, W., Ragnarsson, L., Heyns, M. 2003
  • Variation of composition of sputtered TiN films as a function of target nitridation, thermal anneal, and substrate topography Appl. Phys. Lett. Tsai, W., Delfino, M. 1995; 67 (220)