Bio


Nishi's research interest has been in silicon and germanium-based CMOS devices, processes and materials. He is currently interested in research for new device structures with new materials in the nanoelectronics era, resistive switching memory, metal gate work function engineering, flexible electronics, graphene band engineering.

Academic Appointments


Honors & Awards


  • Fellow International, Japan Society of Applied Physics (2012)
  • Lifetme Achievement Award, SEMI (2008)
  • Robert N. Noyce Medal, IEEE (2002)
  • Jack A. Morton Award, IEEE (1995)
  • Life Fellow, IEEE (1987)

Professional Education


  • PhD, University of Tokyo (1973)

2013-14 Courses


Journal Articles


  • Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching IEEE TRANSACTIONS ON ELECTRON DEVICES Kamiya, K., Yang, M. Y., Magyari-Koepe, B., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 60 (10): 3400-3406
  • Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories APPLIED PHYSICS LETTERS Yang, M. Y., Kamiya, K., Magyari-Koepe, B., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 103 (9)

    View details for DOI 10.1063/1.4819772

    View details for Web of Science ID 000323846900064

  • First principles modeling of charged oxygen vacancy filaments in reduced TiO2-implications to the operation of non-volatile memory devices MATHEMATICAL AND COMPUTER MODELLING Zhao, L., Park, S., Magyari-Koepe, B., Nishi, Y. 2013; 58 (1-2): 275-281
  • p-Channel Field-Effect Transistors Based on C-60 Doped with Molybdenum Trioxide ACS APPLIED MATERIALS & INTERFACES Lee, T. H., Luessem, B., Kim, K., Giri, G., Nishi, Y., Bao, Z. 2013; 5 (7): 2337-2341

    Abstract

    Fullerene (C60) is a well-known n-channel organic semiconductor. We demonstrate that p-channel C60 field-effect transistors are possible by doping with molybdenum trioxide (MoO3). The device performance of the p-channel C60 field-effect transistors, such as mobility, threshold voltage, and on/off ratio is varied in a controlled manner by changing doping concentration. This work demonstrates the utility of charge transfer doping to obtain both n- and p-channel field-effect transistors with a single organic semiconductor.

    View details for DOI 10.1021/am3026568

    View details for Web of Science ID 000317549100007

    View details for PubMedID 23446111

  • Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories PHYSICAL REVIEW B Kamiya, K., Yang, M. Y., Nagata, T., Park, S., Magyari-Koepe, B., Chikyow, T., Yamada, K., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 87 (15)
  • Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer JAPANESE JOURNAL OF APPLIED PHYSICS Yang, M. Y., Kamiya, K., Magyari-Koepe, B., Momida, H., Ohno, T., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 52 (4)
  • Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory APPLIED PHYSICS LETTERS Zhao, L., Park, S., Magyari-Koepe, B., Nishi, Y. 2013; 102 (8)

    View details for DOI 10.1063/1.4794083

    View details for Web of Science ID 000315597000081

  • Achieving direct band gap in germanium through integration of Sn alloying and external strain JOURNAL OF APPLIED PHYSICS Gupta, S., Magyari-Koepe, B., Nishi, Y., Saraswat, K. C. 2013; 113 (7)

    View details for DOI 10.1063/1.4792649

    View details for Web of Science ID 000315262800027

  • Prediction of Semimetallic Tetragonal Hf2O3 and Zr2O3 from First Principles PHYSICAL REVIEW LETTERS Xue, K., Blaise, P., Fonseca, L. R., Nishi, Y. 2013; 110 (6)

    Abstract

    Tetragonal semimetallic phases are predicted for Hf(2)O(3) and Zr(2)O(3) using density functional theory. The structures belong to space group P4[over ¯]m2 and are more stable than their corundum counterparts. Many body corrections at first order confirm their semimetallic character. The carrier concentrations are very similar for both materials, and are estimated as 1.8×10(21) cm(-3) for both electrons and holes, allowing for electric conduction. This could serve as a basic explanation for the low resistance state of hafnia-based resistive random access memory.

    View details for DOI 10.1103/PhysRevLett.110.065502

    View details for Web of Science ID 000314687300023

    View details for PubMedID 23432270

  • Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11 Kamiya, K., YANG, M. Y., Magyari-Koepe, B., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 58 (7): 181-188
  • First-Principles Study of Oxygen Vacancy and Hydrogen Impurity Effects in the Pseudo-hexagonal Ta2O5 NONVOLATILE MEMORIES 2 Kim, J. Y., Magyari-Koepe, B., Hazeghi, A., Lee, K. J., Kim, H. S., Lee, S. H., Nishi, Y. 2013; 58 (5): 41-44
  • Neural-specific Sox2 input and differential Gli-binding affinity provide context and positional information in Shh-directed neural patterning GENES & DEVELOPMENT Peterson, K. A., Nishi, Y., Ma, W., Vedenko, A., Shokri, L., Zhang, X., McFarlane, M., Baizabal, J., Junker, J. P., van Oudenaarden, A., Mikkelsen, T., Bernstein, B. E., Bailey, T. L., Bulyk, M. L., Wong, W. H., McMahon, A. P. 2012; 26 (24): 2802-2816

    Abstract

    In the vertebrate neural tube, regional Sonic hedgehog (Shh) signaling invokes a time- and concentration-dependent induction of six different cell populations mediated through Gli transcriptional regulators. Elsewhere in the embryo, Shh/Gli responses invoke different tissue-appropriate regulatory programs. A genome-scale analysis of DNA binding by Gli1 and Sox2, a pan-neural determinant, identified a set of shared regulatory regions associated with key factors central to cell fate determination and neural tube patterning. Functional analysis in transgenic mice validates core enhancers for each of these factors and demonstrates the dual requirement for Gli1 and Sox2 inputs for neural enhancer activity. Furthermore, through an unbiased determination of Gli-binding site preferences and analysis of binding site variants in the developing mammalian CNS, we demonstrate that differential Gli-binding affinity underlies threshold-level activator responses to Shh input. In summary, our results highlight Sox2 input as a context-specific determinant of the neural-specific Shh response and differential Gli-binding site affinity as an important cis-regulatory property critical for interpreting Shh morphogen action in the mammalian neural tube.

    View details for DOI 10.1101/gad.207142.112

    View details for Web of Science ID 000312775700012

    View details for PubMedID 23249739

  • Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN APPLIED PHYSICS LETTERS Long, R. D., Hazeghi, A., Gunji, M., Nishi, Y., McIntyre, P. C. 2012; 101 (24)

    View details for DOI 10.1063/1.4769827

    View details for Web of Science ID 000312490000025

  • The effects of vacuum ultraviolet radiation on low-k dielectric films JOURNAL OF APPLIED PHYSICS Sinha, H., Ren, H., Nichols, M. T., Lauer, J. L., Tomoyasu, M., Russell, N. M., Jiang, G., Antonelli, G. A., Fuller, N. C., Engelmann, S. U., Lin, Q., Ryan, V., Nishi, Y., Shohet, J. L. 2012; 112 (11)

    View details for DOI 10.1063/1.4751317

    View details for Web of Science ID 000312490700001

  • First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides JOURNAL OF MATERIALS SCIENCE Magyari-Koepe, B., Park, S. G., Lee, H., Nishi, Y. 2012; 47 (21): 7498-7514
  • Tuning the Built-in Electric Field in Ferroelectric Pb(Zr0.2Ti0.8)O-3 Films for Long-Term Stability of Single-Digit Nanometer Inverted Domains NANO LETTERS Tayebi, N., Kim, S., Chen, R. J., Quan Tran, Q., Franklin, N., Nishi, Y., Ma, Q., Rao, V. 2012; 12 (11): 5455-5463

    Abstract

    The emergence of new technologies, such as whole genome sequencing systems, which generate a large amount of data, is requiring ultrahigh storage capacities. Due to their compactness and low power consumption, probe-based memory devices using Pb(Zr(0.2)Ti(0.8))O(3) (PZT) ferroelectric films are the ideal candidate for such applications where portability is desired. To achieve ultrahigh (>1 Tbit/in(2)) storage densities, sub-10 nm inverted domains are required. However, such domains remain unstable and can invert back to their original polarization due to the effects of an antiparallel built-in electric field in the PZT film, domain-wall, and depolarization energies. Here, we show that the built-in electric-field can be tuned and suppressed by repetitive hydrogen and oxygen plasma treatments. Such treatments trigger reversible Pb reduction/oxidation activity, which alters the electrochemistry of the Pb overlayer and compensates for charges induced by the Pb vacancies. This tuning mechanism is used to demonstrate the writing of stable and equal size sub-4 nm domains in both up- and down-polarized PZT films, corresponding to eight inverted unit-cells. The bit sizes recorded here are the smallest ever achieved, which correspond to potential 60 Tbit/in(2) data storage densities.

    View details for DOI 10.1021/nl302911k

    View details for Web of Science ID 000311244400003

    View details for PubMedID 23043427

  • Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices IEEE TRANSACTIONS ON ELECTRON DEVICES Zhang, X., Mitard, J., Ragnarsson, L., Hoffmann, T., Deal, M., Grubbs, M. E., Li, J., Magyari-Kope, B., Clemens, B. M., Nishi, Y. 2012; 59 (11): 3124-3126
  • Hard HfB2 tip-coatings for ultrahigh density probe-based storage APPLIED PHYSICS LETTERS Tayebi, N., Yanguas-Gil, A., Kumar, N., Zhang, Y., Abelson, J. R., Nishi, Y., Ma, Q., Rao, V. R. 2012; 101 (9)

    View details for DOI 10.1063/1.4748983

    View details for Web of Science ID 000308408100026

  • Engineering the metal gate electrode for controlling the threshold voltage of organic transistors APPLIED PHYSICS LETTERS Chung, Y., Johnson, O., Deal, M., Nishi, Y., Murmann, B., Bao, Z. 2012; 101 (6)

    View details for DOI 10.1063/1.4739511

    View details for Web of Science ID 000307862400089

  • Charging response of back-end-of-the-line barrier dielectrics to VUV radiation THIN SOLID FILMS Sinha, H., Lauer, J. L., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2012; 520 (16): 5300-5303
  • Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser APPLIED PHYSICS LETTERS Nam, D., Sukhdeo, D., Cheng, S., Roy, A., Huang, K. C., Brongersma, M., Nishi, Y., Saraswat, K. 2012; 100 (13)

    View details for DOI 10.1063/1.3699224

    View details for Web of Science ID 000302230800012

  • Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer APPLIED PHYSICS LETTERS Ryu, S. W., Ahn, Y. B., Kim, H. J., Nishi, Y. 2012; 100 (13)

    View details for DOI 10.1063/1.3697691

    View details for Web of Science ID 000302230800079

  • Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass APPLIED PHYSICS LETTERS Nichols, M. T., Sinha, H., Wiltbank, C. A., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2012; 100 (11)

    View details for DOI 10.1063/1.3693526

    View details for Web of Science ID 000302204900059

  • ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels APPLIED PHYSICS LETTERS Kamiya, K., Yang, M. Y., Park, S., Magyari-Koepe, B., Nishi, Y., Niwa, M., Shiraishi, K. 2012; 100 (7)

    View details for DOI 10.1063/1.3685222

    View details for Web of Science ID 000300436800077

  • Germanium on Insulator (GOI) Structure Using Hetero-Epitaxial Lateral Overgrowth on Silicon GRAPHENE, GE/III-V, NANOWIRES, AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 4 Nam, J. H., Fuse, T., Nishi, Y., Saraswat, K. C. 2012; 45 (4): 203-208

    View details for DOI 10.1149/1.3700469

    View details for Web of Science ID 000316890000023

  • Plasma and vacuum ultraviolet induced charging of SiO2 and HfO2 patterned structures JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Lauer, J. L., Upadhyaya, G. S., Sinha, H., KRUGER, J. B., Nishi, Y., Shohet, J. L. 2012; 30 (1)

    View details for DOI 10.1116/1.3654012

    View details for Web of Science ID 000298992800009

  • First Principles Guiding Principles for the Switching Process in Oxide ReRAM 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) Shiraishil, K., YANG, M. Y., Kamiya, K., Magyari-Koepe, B., Niwa, M., Nishi, Y. 2012: 489-492
  • Highly-Strained Germanium as a Gain Medium for Silicon-Compatible Lasers 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Sukhdeo, D., Nam, D., Cheng, S., Yuan, Z., Roy, A., Huang, K. C., Brongersma, M., Nishi, Y., Saraswat, K. 2012
  • Computational Study toward Micro Electronics Engineering 2012 28TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL) Shiraishi, K., Yamaguchi, K., Yang, M., PARK, S. G., Kamiya, K., Shigeta, Y., Magyari-Kope, B., Niwa, M., Nishi, Y. 2012: 65-70
  • Physics in Designing Desirable ReRAM Stack Structure-Atomistic Recipes Based on Oxygen Chemical Potential Control and Charge Injection/Removal 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) Kamiya, K., YANG, M. Y., Magyari-Koepe, B., Niwa, M., Nishi, Y., Shiraishi, K. 2012
  • The effects of plasma exposure on low-k dielectric materials ADVANCED ETCH TECHNOLOGY FOR NANOPATTERNING Shohet, J. L., Ren, H., Nichols, M. T., Sinha, H., Lu, W., Mavrakakis, K., Lin, Q., Russell, N. M., Tomoyasu, M., Antonelli, G. A., Engelmann, S. U., Fuller, N. C., Ryan, V., Nishi, Y. 2012; 8328

    View details for DOI 10.1117/12.917967

    View details for Web of Science ID 000304817200011

  • Towards High Mobility GeSn Channel nMOSFETs: Improved Surface Passivation Using Novel Ozone Oxidation Method 2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) Gupta, S., Vincent, B., Yang, B., LIN, D., Gencarelli, F., Lin, J. J., Chen, R., Richard, O., Bender, H., Magyari-Koepe, B., Caymax, M., Dekoster, J., Nishi, Y., Saraswat, K. C. 2012
  • Strained germanium thin film membrane on silicon substrate for optoelectronics OPTICS EXPRESS Nam, D., Sukhdeo, D., Roy, A., Balram, K., Cheng, S., Huang, K. C., Yuan, Z., Brongersma, M., Nishi, Y., Miller, D., Saraswat, K. 2011; 19 (27): 25866-25872

    Abstract

    This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.

    View details for Web of Science ID 000301151500004

    View details for PubMedID 22274174

  • Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET IEEE TRANSACTIONS ON ELECTRON DEVICES Nainani, A., Irisawa, T., Yuan, Z., Bennett, B. R., Boos, J. B., Nishi, Y., Saraswat, K. C. 2011; 58 (10): 3407-3415
  • InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design JOURNAL OF APPLIED PHYSICS Nainani, A., Yuan, Z., Krishnamohan, T., Bennett, B. R., Boos, J. B., Reason, M., Ancona, M. G., Nishi, Y., Saraswat, K. C. 2011; 110 (1)

    View details for DOI 10.1063/1.3600220

    View details for Web of Science ID 000292776500124

  • High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for n(+)/p Junction Diode IEEE ELECTRON DEVICE LETTERS Thareja, G., Chopra, S., Adams, B., Kim, Y., Moffatt, S., Saraswat, K., Nishi, Y. 2011; 32 (7): 838-840
  • Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3 NANOTECHNOLOGY Magyari-Koepe, B., Tendulkar, M., Park, S., Lee, H. D., Nishi, Y. 2011; 22 (25)

    Abstract

    Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

    View details for DOI 10.1088/0957-4484/22/25/254029

    View details for Web of Science ID 000290619900030

    View details for PubMedID 21572196

  • The nature of the defects generated from plasma exposure in pristine and ultraviolet-cured low-k organosilicate glass APPLIED PHYSICS LETTERS Ren, H., Jiang, G., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2011; 98 (25)

    View details for DOI 10.1063/1.3601922

    View details for Web of Science ID 000292039900048

  • Effect of the dielectric-substrate interface on charge accumulation from vacuum ultraviolet irradiation of low-k porous organosilicate dielectrics THIN SOLID FILMS Sinha, H., SEHGAL, A., Ren, H., Nichols, M. T., Tomoyasu, M., Russell, N. M., Nishi, Y., Shohet, J. L. 2011; 519 (16): 5464-5466
  • Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon APPLIED PHYSICS LETTERS Cheng, S., Shambat, G., Lu, J., Yu, H., Saraswat, K., Kamins, T. I., Vuckovic, J., Nishi, Y. 2011; 98 (21)

    View details for DOI 10.1063/1.3592837

    View details for Web of Science ID 000291041600001

  • Effects of vacuum ultraviolet radiation on deposited and ultraviolet-cured low-k porous organosilicate glass JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Sinha, H., Antonelli, G. A., Jiang, G., Nishi, Y., Shohet, J. L. 2011; 29 (3)

    View details for DOI 10.1116/1.3570818

    View details for Web of Science ID 000289689000002

  • Electrical Characteristics of Germanium n(+)/p Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb IEEE ELECTRON DEVICE LETTERS Thareja, G., Cheng, S., Kamins, T., Saraswat, K., Nishi, Y. 2011; 32 (5): 608-610
  • Dielectric relaxation study of hydrogen exposure as a source of two-level systems in Al2O3 JOURNAL OF NON-CRYSTALLINE SOLIDS Jameson, J. R., Ngo, D., Benko, C., McVittie, J. P., Nishi, Y., Young, B. A. 2011; 357 (10): 2148-2151
  • Novel Germanium n-MOSFETs With Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration IEEE ELECTRON DEVICE LETTERS Yu, H., Kobayashi, M., Park, J., Nishi, Y., Saraswat, K. C. 2011; 32 (4): 446-448
  • Defects in low-k organosilicate glass and their response to processing as measured with electron-spin resonance APPLIED PHYSICS LETTERS Ren, H., Nichols, M. T., Jiang, G., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2011; 98 (10)

    View details for DOI 10.1063/1.3562307

    View details for Web of Science ID 000288277200057

  • Challenges and opportunities for future non-volatile memory technology CURRENT APPLIED PHYSICS Nishi, Y. 2011; 11 (2): E101-E103
  • Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors NANO LETTERS Chung, Y., Verploegen, E., Vailionis, A., Sun, Y., Nishi, Y., Murmann, B., Bao, Z. 2011; 11 (3): 1161-1165

    Abstract

    We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.

    View details for DOI 10.1021/nl104087u

    View details for Web of Science ID 000288061500043

    View details for PubMedID 21323381

  • Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in TiO2 for Resistive Switching Memory IEEE ELECTRON DEVICE LETTERS Park, S., Magyari-Koepe, B., Nishi, Y. 2011; 32 (2): 197-199
  • On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs IEEE TRANSACTIONS ON ELECTRON DEVICES Kobayashi, M., Mitard, J., Irisawa, T., Hoffmann, T., Meuris, M., Saraswat, K., Nishi, Y., Heyns, M. 2011; 58 (2): 384-391
  • Role of Hydrogen Ions in TiO2-Based Memory Devices INTEGRATED FERROELECTRICS Jameson, J. R., Nishi, Y. 2011; 124: 112-118
  • Effect of vacuum ultraviolet and ultraviolet irradiation on mobile charges in the bandgap of low-k-porous organosilicate dielectrics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Sinha, H., Nichols, M. T., SEHGAL, A., Tomoyasu, M., Russell, N. M., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2011; 29 (1)

    View details for DOI 10.1116/1.3520433

    View details for Web of Science ID 000286648300001

  • Changes to Charge and Defects in Dielectrics from Ion and Photon Fluences during Plasma Exposure ELECTROCHEMICAL AND SOLID STATE LETTERS Ren, H., Nishi, Y., Shohet, J. L. 2011; 14 (3): H107-H109

    View details for DOI 10.1149/1.3524403

    View details for Web of Science ID 000285974100011

  • Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation DAMAGE TO VUV, EUV, AND X-RAY OPTICS III Shohet, J. L., Sinha, H., Ren, H., Nichols, M. T., Nishi, Y., Tomoyasu, M., Russell, N. M. 2011; 8077

    View details for DOI 10.1117/12.887691

    View details for Web of Science ID 000293212000018

  • Understanding the Switching Mechanism in RRAM Devices and the Dielectric Breakdown of Ultrathin High-k Gate Stacks from First Principles Calculations 2011 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT) Magyari-Koepe, B., Park, S., Lee, H. D., Nishi, Y. 2011; 37 (1): 167-178

    View details for DOI 10.1149/1.3600737

    View details for Web of Science ID 000305898900019

  • Direct band Ge photoluminescence at 1.6 mu m coupled to Ge-on-Si microdisk resonators 2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) Shambat, G., Cheng, S., Lu, J., Nishi, Y., Vuckovic, J. 2011
  • GeSn Technology: Extending the Ge Electronics Roadmap 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) Gupta, S., Chen, R., Magyari-Kope, B., Lin, H., Yang, B., Nainani, A., Nishi, Y., Harris, J. S., Saraswat, K. C. 2011
  • Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer APPLIED PHYSICS LETTERS Lee, H. D., Nishi, Y. 2010; 97 (25)

    View details for DOI 10.1063/1.3528211

    View details for Web of Science ID 000285764300040

  • Direct band Ge photoluminescence near 1.6 mu m coupled to Ge-on-Si microdisk resonators APPLIED PHYSICS LETTERS Shambat, G., Cheng, S., Lu, J., Nishi, Y., Vuckovic, J. 2010; 97 (24)

    View details for DOI 10.1063/1.3526732

    View details for Web of Science ID 000285481000002

  • Development and characterization of high temperature stable Ta-W-Si-C amorphous metal gates APPLIED PHYSICS LETTERS Grubbs, M. E., Zhang, X., Deal, M., Nishi, Y., Clemens, B. M. 2010; 97 (22)

    View details for DOI 10.1063/1.3508952

    View details for Web of Science ID 000284965000087

  • Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Sinha, H., Straight, D. B., Lauer, J. L., Fuller, N. C., Engelmann, S. U., Zhang, Y., Antonelli, G. A., Severson, M., Nishi, Y., Shohet, J. L. 2010; 28 (6): 1316-1318

    View details for DOI 10.1116/1.3488594

    View details for Web of Science ID 000283745300008

  • Plasma damage effects on low-k porous organosilicate glass JOURNAL OF APPLIED PHYSICS Ren, H., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 108 (9)

    View details for DOI 10.1063/1.3506523

    View details for Web of Science ID 000284270900111

  • An Ultraclean Tip-Wear Reduction Scheme for Ultrahigh Density Scanning Probe-Based Data Storage ACS NANO Tayebi, N., Zhang, Y., Chen, R. J., Tran, Q., Chen, R., Nishi, Y., Ma, Q., Rao, V. 2010; 4 (10): 5713-5720

    Abstract

    Probe-based memory devices using ferroelectric media have the potential to achieve ultrahigh data-storage densities under high write-read speeds. However, the high-speed scanning operations over a device lifetime of 5-10 years, which corresponds to a probe tip sliding distance of 5-10 km, can cause the probe tip to mechanically wear, critically affecting its write-read resolution. Here, we show that the long distance tip-wear endurance issue can be resolved by introducing a thin water layer at the tip-media interface-thin enough to form a liquid crystal. By modulating the force at the tip-surface contact, this water crystal layer can act as a viscoelastic material which reduces the stress level on atomic bonds taking part in the wear process. Under our optimized environment, a platinum-iridium probe tip can retain its write-read resolution over 5 km of sliding at a 5 mm/s velocity on a smooth ferroelectric film. We also demonstrate a 3.6 Tbit/inch(2) storage density over a 1 × 1 ?m(2) area, which is the highest density ever written on ferroelectric films over such a large area.

    View details for DOI 10.1021/nn1013512

    View details for Web of Science ID 000283453700032

    View details for PubMedID 20929239

  • Electronic correlation effects in reduced rutile TiO2 within the LDA+U method PHYSICAL REVIEW B Park, S., Magyari-Koepe, B., Nishi, Y. 2010; 82 (11)
  • Bilayer metal gate electrodes with tunable work function: Adhesion and interface characterization JOURNAL OF APPLIED PHYSICS Birringer, R. P., Lu, C., Deal, M., Nishi, Y., Dauskardt, R. H. 2010; 108 (5)

    View details for DOI 10.1063/1.3466957

    View details for Web of Science ID 000282478900037

  • Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics APPLIED PHYSICS LETTERS Ren, H., Sinha, H., SEHGAL, A., Nichols, M. T., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 97 (7)

    View details for DOI 10.1063/1.3481079

    View details for Web of Science ID 000281153600060

  • High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing APPLIED PHYSICS LETTERS Yu, H., Cheng, S., Park, J., Okyay, A. K., Onbasli, M. C., Ercan, B., Nishi, Y., Saraswat, K. C. 2010; 97 (6)

    View details for DOI 10.1063/1.3478242

    View details for Web of Science ID 000280940900089

  • Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface PHYSICAL REVIEW B Liu, Z., Kobayashi, M., Paul, B. C., Bao, Z., Nishi, Y. 2010; 82 (3)
  • Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals PHYSICAL REVIEW B Gong, Y., Ishikawa, S., Cheng, S., Gunji, M., Nishi, Y., Vuckovic, J. 2010; 81 (23)
  • Model of metallic filament formation and rupture in NiO for unipolar switching PHYSICAL REVIEW B Lee, H. D., Magyari-Kope, B., Nishi, Y. 2010; 81 (19)
  • Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance APPLIED PHYSICS LETTERS Ren, H., Cheng, S. L., Nishi, Y., Shohet, J. L. 2010; 96 (19)

    View details for DOI 10.1063/1.3430570

    View details for Web of Science ID 000277756400053

  • Synthesis of TiO2 nanoframe and the prototype of a nanoframe solar cell NANOTECHNOLOGY Chen, Y., Kim, H., McVittie, J., Ting, C., Nishi, Y. 2010; 21 (18)

    Abstract

    Nanoframes containing 20 nm diameter TiO(2) nanowire arrays were synthesized with polymer templates via cathodic sol-gel deposition followed by 450 degrees C sintering. Raman spectra indicated that they are composed of pure anatase TiO(2). The nanowire array inside the nanoframe was confirmed to be single crystalline by high resolution TEM. Dye-sensitized solar cells based on this nanoframe were fabricated and the effects of the top cover in the nanoframe, which is the only difference between nanoframe cells and nanowire cells, were investigated. The results show that the top cover does not prevent the I( - ) and I(3)( - ) ions underneath from diffusing freely in the electrolyte and causes no deterioration of the cell performance. The nanoframe cell is a promising device in which nanowire arrays are strengthened and the effective internal surface area has the potentiality to be increased without sacrificing the advantages of nanowire cells compared to nanoparticle cells.

    View details for DOI 10.1088/0957-4484/21/18/185303

    View details for Web of Science ID 000276672100009

    View details for PubMedID 20378944

  • Uniaxial Stress Engineering for High-Performance Ge NMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES Kobayashi, M., Irisawa, T., Magyari-Koepe, B., Saraswat, K., Wong, H. P., Nishi, Y. 2010; 57 (5): 1037-1046
  • Numerical simulation of vacuum-ultraviolet irradiation of dielectric layers APPLIED PHYSICS LETTERS Sinha, H., Ren, H., SEHGAL, A., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 96 (14)

    View details for DOI 10.1063/1.3386531

    View details for Web of Science ID 000276554600063

  • The effects of wet surface clean and in situ interlayer on In-0.52Al0.48As metal-oxide-semiconductor characteristics APPLIED PHYSICS LETTERS Kobayashi, M., Thareja, G., Sun, Y., Goel, N., Garner, M., Tsai, W., Pianetta, P., Nishi, Y. 2010; 96 (14)

    View details for DOI 10.1063/1.3379024

    View details for Web of Science ID 000276554600066

  • Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology APPLIED PHYSICS LETTERS Liu, P., Huang, C., Huang, Y., Lin, J., Cheng, S., Nishi, Y., Sze, S. M. 2010; 96 (11)

    View details for DOI 10.1063/1.3365177

    View details for Web of Science ID 000275825200042

  • Bilayer metal gate electrodes with tunable work function: Mechanism and proposed model JOURNAL OF APPLIED PHYSICS Lu, C., Wong, G. M., Birringer, R., Dauskardt, R., Deal, M. D., Clemens, B. M., Nishi, Y. 2010; 107 (6)

    View details for DOI 10.1063/1.3326237

    View details for Web of Science ID 000276210800055

  • Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics APPLIED PHYSICS LETTERS Sinha, H., Lauer, J. L., Nichols, M. T., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 96 (5)

    View details for DOI 10.1063/1.3306729

    View details for Web of Science ID 000274319500075

  • Fully inverted single-digit nanometer domains in ferroelectric films APPLIED PHYSICS LETTERS Tayebi, N., Narui, Y., Franklin, N., Collier, C. P., Giapis, K. P., Nishi, Y., Zhang, Y. 2010; 96 (2)

    View details for DOI 10.1063/1.3280371

    View details for Web of Science ID 000273689400050

  • Photonic Crystal and Plasmonic Silicon-Based Light Sources IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Makarova, M., Gong, Y., Cheng, S., Nishi, Y., Yerci, S., Li, R., Dal Negro, L., Vuckovic, J. 2010; 16 (1): 132-140
  • Charge Trapping within UV and Vacuum UV Irradiated Low-k Porous Organosilicate Dielectrics JOURNAL OF THE ELECTROCHEMICAL SOCIETY Lauer, J. L., Sinha, H., Nichols, M. T., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 157 (8): G177-G182

    View details for DOI 10.1149/1.3435285

    View details for Web of Science ID 000279673400052

  • Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation JOURNAL OF THE ELECTROCHEMICAL SOCIETY Tada, M., Park, J., Kuzum, D., Thareja, G., Jain, J. R., Nishi, Y., Saraswat, K. C. 2010; 157 (3): H371-H376

    View details for DOI 10.1149/1.3295703

    View details for Web of Science ID 000274321900093

  • Experimental Demonstration of High Source Velocity and Its Enhancement by Uniaxial Stress in Ge PFETs 2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS Kobabyashi, M., Mitard, J., Irisawa, T., Hoffmann, T., Meuris, M., Saraswat, K., Nishi, Y., Heyns, M. 2010: 215-216
  • Development of high-k dielectric for Antimonides and a sub 350 degrees C III-V pMOSFET outperforming Germanium 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST Nainani, A., Irisawa, T., Yuan, Z., Sun, Y., Krishnamohan, T., Reason, M., Bennett, B. R., Boos, J. B., Ancona, M. G., Nishi, Y., Saraswat, K. C. 2010
  • High Performance Germanium N-MOSFET with Antimony Dopant Activation Beyond 1x10(20) cm(-3) 2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST Thareja, G., Liang, J., Chopra, S., Adams, B., Patil, N., Cheng, S., Nainani, A., Tasyurek, E., Kim, Y., Moffatt, S., Brennan, R., McVittie, J., KAMINS, T., Saraswat, K., Nishi, Y. 2010
  • Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si SIGE, GE, AND RELATED COMPOUNDS 4: MATERIALS, PROCESSING, AND DEVICES Cheng, S., Shambat, G., Lu, J., Yu, H., Saraswat, K., Vuckovic, J., Nishi, Y. 2010; 33 (6): 545-554

    View details for DOI 10.1149/1.3487585

    View details for Web of Science ID 000314957600056

  • Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack JOURNAL OF APPLIED PHYSICS Kobayashi, M., Thareja, G., Ishibashi, M., Sun, Y., Griffin, P., McVittie, J., Pianetta, P., Saraswat, K., Nishi, Y. 2009; 106 (10)

    View details for DOI 10.1063/1.3259407

    View details for Web of Science ID 000272932300103

  • Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si APPLIED PHYSICS LETTERS Yu, H., Kim, D., Ren, S., Kobayashi, M., Miller, D. A., Nishi, Y., Saraswat, K. C. 2009; 95 (16)

    View details for DOI 10.1063/1.3254181

    View details for Web of Science ID 000271218200006

  • Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n(+)/p-Junction Diode IEEE ELECTRON DEVICE LETTERS Yu, H., Cheng, S., Griffin, P. B., Nishi, Y., Saraswat, K. C. 2009; 30 (9): 1002-1004
  • Image Charge and Dipole Combination Model for the Schottky Barrier Tuning at the Dopant Segregated Metal/Semiconductor Interface IEEE ELECTRON DEVICE LETTERS Geng, L., Magyari-Koepe, B., Nishi, Y. 2009; 30 (9): 963-965
  • The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices IEEE ELECTRON DEVICE LETTERS Grubbs, M. E., Deal, M., Nishi, Y., Clemens, B. M. 2009; 30 (9): 925-927
  • Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors MRS BULLETIN Wallace, R. M., McIntyre, P. C., Kim, J., Nishi, Y. 2009; 34 (7): 493-503
  • Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate. Optics express Cheng, S., Lu, J., Shambat, G., Yu, H., Saraswat, K., Vuckovic, J., Nishi, Y. 2009; 17 (12): 10019-10024

    Abstract

    We report the room temperature electroluminescence (EL) at 1.6 microm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.

    View details for PubMedID 19506652

  • Solution-processed flexible organic transistors showing very-low subthreshold slope with a bilayer polymeric dielectric on plastic APPLIED PHYSICS LETTERS Liu, Z., Oh, J. H., Roberts, M. E., Wei, P., Paul, B. C., Okajima, M., Nishi, Y., Bao, Z. 2009; 94 (20)

    View details for DOI 10.1063/1.3133902

    View details for Web of Science ID 000266342800065

  • Surface Science of Catalyst Dynamics for Aligned Carbon Nanotube Synthesis on a Full-Scale Quartz Wafer JOURNAL OF PHYSICAL CHEMISTRY C Akinwande, D., Patil, N., Lin, A., Nishi, Y., Wong, H. P. 2009; 113 (19): 8002-8008

    View details for DOI 10.1021/jp810794y

    View details for Web of Science ID 000265895500005

  • Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2/Si interface APPLIED PHYSICS LETTERS Lauer, J. L., Shohet, J. L., Nishi, Y. 2009; 94 (16)

    View details for DOI 10.1063/1.3122925

    View details for Web of Science ID 000265823300054

  • Modeling the spatio-temporal network that drives patterning in the vertebrate central nervous system BIOCHIMICA ET BIOPHYSICA ACTA-GENE REGULATORY MECHANISMS Nishi, Y., Ji, H., Wong, W. H., McMahon, A. P., Vokes, S. A. 2009; 1789 (4): 299-305

    Abstract

    In this review, we discuss the gene regulatory network underlying the patterning of the ventral neural tube during vertebrate embryogenesis. The neural tube is partitioned into domains of distinct cell fates by inductive signals along both anterior-posterior and dorsal-ventral axes. A defining feature of the dorsal-ventral patterning is the graded distribution of Sonic hedgehog (Shh), which acts as a morphogen to specify several classes of ventral neurons in a concentration-dependent fashion. These inductive signals translate into patterned expressions of transcription factors that define different neural progenitor subtypes. Progenitor boundaries are sharpened by repressive interactions between these transcription factors. The progenitor-expressed transcription factors induce another set of transcription factors that are thought to contribute to neural identities in post-mitotic neural precursors. Thus, the gene regulatory network of the ventral neural tube patterning is characterized by hierarchical expression [inductive signal-->progenitor specifying factors (mitotic)--> precursor specifying factors (post mitotic)--> differentiated neural markers] and cross-repression between progenitor-expressed regulatory factors. Although a number of transcriptional regulators have been identified at each hierarchical level, their precise regulatory relationships are not clear. Here we discuss approaches aimed at clarifying and extending our understanding of the formation and propagation of this network.

    View details for DOI 10.1016/j.bbagrm.2009.01.002

    View details for Web of Science ID 000265729800008

    View details for PubMedID 19445894

  • Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface CHINESE PHYSICS LETTERS Geng Li, L., Magyari-Kope Blanka, B., Zhang Zhi-Yong, Z. Y., Nishi Yoshio, Y. 2009; 26 (3)
  • Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors Based on an Asymmetric Small-Molecule Semiconductor IEEE TRANSACTIONS ON ELECTRON DEVICES Liu, Z., Becerril, H. A., Roberts, M. E., Nishi, Y., Bao, Z. 2009; 56 (2): 176-185
  • Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application JOURNAL OF APPLIED PHYSICS Kobayashi, M., Kinoshita, A., Saraswat, K., Wong, H. P., Nishi, Y. 2009; 105 (2)

    View details for DOI 10.1063/1.3065990

    View details for Web of Science ID 000262970900048

  • Plasmonic enhancement of emission from Si-nanocrystals APPLIED PHYSICS LETTERS Gong, Y., Lu, J., Cheng, S., Nishi, Y., Vuckovic, J. 2009; 94 (1)

    View details for DOI 10.1063/1.3055602

    View details for Web of Science ID 000262357800073

  • Plasmonic Metal-Insulator-Metal Structures for Interaction with Silicon Nanocrystals 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 Gong, Y., Cheng, S., Nishi, Y., Vuckovic, J. 2009: 1818-1819
  • Ab initio study of Al-Ni bilayers on SiO2: Implications to effective work function modulation in gate stacks JOURNAL OF APPLIED PHYSICS Magyari-Kope, B., Park, S., Colombo, L., Nishi, Y., Cho, K. 2009; 105 (1)

    View details for DOI 10.1063/1.3033368

    View details for Web of Science ID 000262534100088

  • Carbon Nanotube Quantum Capacitance for Nonlinear Terahertz Circuits IEEE TRANSACTIONS ON NANOTECHNOLOGY Akinwande, D., Nishi, Y., Wong, H. P. 2009; 8 (1): 31-36
  • Lattice and electronic effects in rutile TiO2 containing charged oxygen defects from ab initio calculations MATERIALS AND PHYSICS FOR NONVOLATILE MEMORIES Park, S., Magyari-Kope, B., Nishi, Y. 2009; 1160: 129-134
  • Impact of hydrogen on the electroforming of Pr0.7Ca0.3MnO3 resistance-change memory devices NVMTS: 2009 10TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM Tendulkar, M. P., Jameson, J. R., Griffin, P. B., McVittie, J. P., Nishi, Y. 2009: 48-51
  • Physical Model of the Impact of Metal Grain Work Function Variability on Emerging Dual Metal Gate MOSFETs and its Implication for SRAM Reliability 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING Zhang, X., Li, J., Grubbs, M., Deal, M., Magyari-Kope, B., Clemens, B. M., Nishi, Y. 2009: 51-54
  • High Performance n-MOSFETs with Novel Source/Drain on Selectively Grown Ge on Si for Monolithic Integration 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING Yu, H., Kobayashi, M., Jung, W. S., Okyay, A. K., Nishi, Y., Saraswat, K. C. 2009: 641-644
  • Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 Yu, H., Ren, S., Kobayashi, M., Miller, D. A., Nishi, Y., Saraswat, K. C. 2009: 369-370
  • High Quality GeO2/Ge Interface Formed by SPA Radical Oxidation and Uniaxial Stress Engineering for High Performance Ge NMOSFETs 2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS Kobayashi, M., Irisawa, T., Kope, B. M., Sun, Y., Saraswat, K., Wong, H. P., Pianetta, P., Nishi, Y. 2009: 76-77
  • Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection JOURNAL OF APPLIED PHYSICS Akinwande, D., Liang, J., Chong, S., Nishi, Y., Wong, H. P. 2008; 104 (12)

    View details for DOI 10.1063/1.3050345

    View details for Web of Science ID 000262225100123

  • Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces APPLIED PHYSICS LETTERS Sun, Y., Pianetta, P., Chen, P., Kobayashi, M., Nishi, Y., Goel, N., Garner, M., Tsai, W. 2008; 93 (19)

    View details for DOI 10.1063/1.3025852

    View details for Web of Science ID 000260944100134

  • Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As APPLIED PHYSICS LETTERS Kobayashi, M., Chen, P. T., Sun, Y., Goel, N., Majhi, P., GARNER, M., Tsai, W., Pianetta, P., Nishi, Y. 2008; 93 (18)

    View details for DOI 10.1063/1.3020298

    View details for Web of Science ID 000260778100030

  • Ab initio modeling of Schottky-barrier height tuning by yttrium at nickel silicide/silicon interface IEEE ELECTRON DEVICE LETTERS Geng, L., Magyari-Kope, B., Zhang, Z., Nishi, Y. 2008; 29 (7): 746-749
  • Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1-xO2/(100)Si interfaces JOURNAL OF APPLIED PHYSICS Chen, P. T., Triplett, B. B., Chambers, J. J., Colombo, L., McIntyre, P. C., Nishi, Y. 2008; 104 (1)

    View details for DOI 10.1063/1.2948922

    View details for Web of Science ID 000257766500104

  • High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts IEEE ELECTRON DEVICE LETTERS Feng, J., Thareja, G., Kobayashi, M., Chen, S., Poon, A., Bai, Y., Griffin, P. B., Wong, S. S., Nishi, Y., Plummer, J. D. 2008; 29 (7): 805-807
  • Electronic structures of Nb-W bulk and surface from first principles calculation JOURNAL OF APPLIED PHYSICS Gong, H. R., Nishi, Y., Cho, K. 2008; 103 (4)

    View details for DOI 10.1063/1.2844467

    View details for Web of Science ID 000254191300024

  • HfO2 gate dielectric on (NH4)(2)S passivated (100) GaAs grown by atomic layer deposition JOURNAL OF APPLIED PHYSICS Chen, P. T., Sun, Y., Kim, E., McIntyre, P. C., Tsai, W., GARNER, M., Pianetta, P., Nishi, Y., Chui, C. O. 2008; 103 (3)

    View details for DOI 10.1063/1.2838471

    View details for Web of Science ID 000253238100054

  • Passivation studies of germanium surfaces ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES VIII Kim, J., McVittie, J., Saraswat, K., Nishi, Y. 2008; 134: 33-36
  • An analytical derivation of the density of states, effective mass, and carrier density for achiral carbon nanotubes IEEE TRANSACTIONS ON ELECTRON DEVICES Akinwande, D., Nishi, Y., Wong, H. P. 2008; 55 (1): 289-297
  • First-principles study of resistance switching in rutile TiO2 with oxygen vacancy 2008 9TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS Park, S., Magyari-Kope, B., Nishi, Y. 2008: 49-53
  • Ultra-high bandwidth memory with 3D-stacked emerging memory cells 2008 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS Abe, K., Tendulkar, M. P., Jameson, J. R., Griffin, P. B., Nomura, K., Fujita, S., Nishi, Y. 2008: 203-206
  • Challenge of Nanoelectronic Materials and Devices toward New Nonvolatile Memories 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 Nishi, Y., Jameson, J. 2008: 892-896
  • Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drainage NMOSFET 2008 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS Kobayashi, M., Kinoshita, A., Saraswat, K., Wong, H. P., Nishi, Y. 2008: 54-55
  • Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain GeNMOSFET 2008 SYMPOSIUM ON VLSI TECHNOLOGY Kobayashi, M., Kinoshita, A., Saraswat, K., Wong, H. P., Nishi, Y. 2008: 43-44
  • Effects of strain and interface on work function of a Nb-W metal gate system APPLIED PHYSICS LETTERS Gong, H. R., Nishi, Y., Cho, K. 2007; 91 (24)

    View details for DOI 10.1063/1.2821225

    View details for Web of Science ID 000251678700037

  • Field-programmable rectification in rutile TiO2 crystals APPLIED PHYSICS LETTERS Jameson, J. R., Fukuzumi, Y., Wang, Z., Griffin, P., Tsunoda, K., Meijer, G. I., Nishi, Y. 2007; 91 (11)

    View details for DOI 10.1063/1.2769961

    View details for Web of Science ID 000249474000038

  • Impact of a process variation on nanowire and nanotube device performance IEEE TRANSACTIONS ON ELECTRON DEVICES Paul, B. C., Fujita, S., Okajima, M., Lee, T. H., Wong, H. P., Nishi, Y. 2007; 54 (9): 2369-2376
  • High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric APPLIED PHYSICS LETTERS Goel, N., Majhi, P., Tsai, W., Warusawithana, M., Schlom, D. G., Santos, M. B., Harris, J. S., Nishi, Y. 2007; 91 (9)

    View details for DOI 10.1063/1.2776846

    View details for Web of Science ID 000249156100134

  • Electro-thermally coupled power optimization for future transistors and its applications IEEE TRANSACTIONS ON ELECTRON DEVICES Chao, A. K., Kapur, P., Morifuji, E., Saraswat, K., Nishi, Y. 2007; 54 (7): 1696-1704
  • An analytical compact circuit model for nanowire FET IEEE TRANSACTIONS ON ELECTRON DEVICES Paul, B. C., Tu, R., Fujita, S., Okajima, M., Lee, T. H., Nishi, Y. 2007; 54 (7): 1637-1644
  • Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment NANO LETTERS Tu, R., Zhang, L., Nishi, Y., Dai, H. 2007; 7 (6): 1561-1565

    Abstract

    Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time, thereby removing uncertainties in calculated mobility due to device geometries, surface and interface states, and gate dielectric constants and thicknesses. Direct experimental evidence showed that surround-gated nanowire transistors exhibit higher capacitance and better electrostatic gate control than top-gated devices, and are the most promising structure for future high performance nanoelectronics.

    View details for DOI 10.1021/nl070378w

    View details for Web of Science ID 000247186800023

    View details for PubMedID 17488051

  • Power optimization for SRAM and its scaling IEEE TRANSACTIONS ON ELECTRON DEVICES Morifuji, E., Patil, D., Horowitz, M., Nishi, Y. 2007; 54 (4): 715-722
  • Bipolar resistive switching in polycrystalline TiO2 films APPLIED PHYSICS LETTERS Tsunoda, K., Fukuzumi, Y., Jameson, J. R., Wang, Z., Griffin, P. B., Nishi, Y. 2007; 90 (11)

    View details for DOI 10.1063/1.2712777

    View details for Web of Science ID 000244959200094

  • Photoluminescence decay dynamics of silicon-rich silicon nitride film in photonic crystal nanocavity 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Makarova, M., Vuckovic, J., Sanda, H., Nishi, Y. 2007: 329-330
  • Electron spin resonance study of as-deposited and annealed (HfO2)(x)(SiO2)(1-x) high-kappa dielectrics on Si JOURNAL OF APPLIED PHYSICS Triplett, B. B., Chen, P. T., Nishi, Y., Kasai, P. H., Chambers, J. J., Colombo, L. 2007; 101 (1)

    View details for DOI 10.1063/1.2402974

    View details for Web of Science ID 000243585200047

  • Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices IEEE ELECTRON DEVICE LETTERS Wang, Z., Griffin, P. B., McVittie, J., Wong, S., McIntyre, P. C., Nishi, Y. 2007; 28 (1): 14-16
  • Analytical model of carbon nanotube electrostatics: Density of states, effective mass, carrier density, and quantum capacitance 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 Akinwande, D., Nishi, Y., Wong, H. P. 2007: 753-756
  • High performance, strained-Ge, heterostructure pMOSFETs SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007 Krishnamohan, T., Kim, D., Jungemann, C., Pham, A., Meinerzhagen, B., Nishi, Y., Saraswat, K. C. 2007: 21-24
  • A semiclassical model of dielectric relaxation in glasses JOURNAL OF APPLIED PHYSICS Jameson, J. R., Harrison, W., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 100 (12)

    View details for DOI 10.1063/1.2397323

    View details for Web of Science ID 000243157900069

  • Results of the search for inspiraling compact star binaries from TAMA300's observation in 2000-2004 PHYSICAL REVIEW D Akutsu, T., Akutsu, T., Ando, M., Arai, K., Araya, A., Asada, H., Aso, Y., Barton, M. A., Beyersdorf, P., Fujiki, Y., Fujimoto, M., Fujita, R., Fukushima, M., Futamase, T., Hamuro, Y., Haruyama, T., Hayakawa, H., Hayama, K., Heinzel, G., Horikoshi, G., Iguchi, H., Iida, Y., Ioka, K., Ishitsuka, H., Kamikubota, N., Kanda, N., Kaneyama, T., Karasawa, Y., Kasahara, K., Kasai, T., Katsuki, M., Kawabe, K., Kawamura, M., Kawamura, S., Kawashima, N., Kawazoe, F., Kojima, Y., Kokeyama, K., Kondo, K., Kozai, Y., Kudoh, H., Kuroda, K., Kuwabara, T., Matsuda, N., Mio, N., Miura, K., Miyakawa, O., Miyama, S., Miyoki, S., Mizusawa, H., Moriwaki, S., Musha, M., Nagano, S., Nagayama, Y., Nakagawa, K., Nakamura, T., Nakano, H., Nakao, K., Nishi, Y., Numata, K., Ogawa, Y., Ohashi, M., Ohishi, N., Okutomi, A., Oohara, K., Otsuka, S., Sago, N., Saito, Y., Sakata, S., Sasaki, M., Sato, K., Sato, N., Sato, S., Sato, Y., Seki, H., Sekido, A., Seto, N., Shibata, M., Shinkai, H., Shintomi, T., Soida, K., Somiya, K., Suzuki, T., Tagoshi, H., Takahashi, H., Takahashi, R., Takamori, A., Takemoto, S., Takeno, K., Tanaka, T., Taniguchi, K., Taniguchi, S., Tanji, T., Tatsumi, D., Taylor, C. T., Telada, S., Tochikubo, K., Tokunari, M., Tomaru, T., Tsubono, K., Tsuda, N., Tsunesada, Y., Uchiyama, T., Ueda, A., Ueda, K., Usui, F., Waseda, K., Watanabe, Y., Yakura, H., Yamamoto, A., Yamamoto, K., Yamazaki, T., Yanagi, Y., Yoda, T., Yokoyama, J., Yoshida, T., Zhu, Z. 2006; 74 (12)
  • Silicon-based photonic crystal nanocavity light emitters APPLIED PHYSICS LETTERS Makarova, M., Vuckovic, J., Sanda, H., Nishi, Y. 2006; 89 (22)

    View details for DOI 10.1063/1.2396903

    View details for Web of Science ID 000242538500001

  • Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Jagannathan, H., Deal, M., Nishi, Y., Kim, H., Freer, E. M., Sundstrom, L., Topuria, T., Rice, P. M. 2006; 24 (5): 2220-2224

    View details for DOI 10.1116/1.2244543

    View details for Web of Science ID 000241476500008

  • Charge trapping in high-k gate stacks due to the bilayer structure itself IEEE TRANSACTIONS ON ELECTRON DEVICES Jameson, J. R., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 53 (8): 1858-1867
  • Nature of germanium nanowire heteroepitaxy on silicon substrates JOURNAL OF APPLIED PHYSICS Jagannathan, H., Deal, M., Nishi, Y., Woodruff, J., Chidsey, C., McIntyre, P. C. 2006; 100 (2)

    View details for DOI 10.1063/1.2219007

    View details for Web of Science ID 000239423400124

  • High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: Experiments IEEE TRANSACTIONS ON ELECTRON DEVICES Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., Saraswat, K. C. 2006; 53 (5): 990-999
  • High-mobility low band-to-band-tunneling strained-germanium double-gate heterostructure FETs: Simulations IEEE TRANSACTIONS ON ELECTRON DEVICES Krishnamohan, T., Kim, D., Nguyen, C. D., Jungemann, C., Nishi, Y., Saraswat, K. C. 2006; 53 (5): 1000-1009
  • Joint LIGO and TAMA300 search for gravitational waves from inspiralling neutron star binaries PHYSICAL REVIEW D Abbott, B., Abbott, R., Adhikari, R., Ageev, A., Agresti, J., Ajith, P., Allen, B., Allen, J., Amin, R., Anderson, S. B., Anderson, W. G., Araya, M., Armandula, H., Ashley, M., Asiri, F., Aufmuth, P., Aulbert, C., Babak, S., Balasubramanian, R., Ballmer, S., Barish, B. C., Barker, C., Barker, D., Barnes, M., Barr, B., Barton, M. A., Bayer, K., Beausoleil, R., Belczynski, K., Bennett, R., Berukoff, S. J., Betzwieser, J., Bhawal, B., Bilenko, I. A., Billingsley, G., Black, E., Blackburn, K., Blackburn, L., Bland, B., Bochner, B., Bogue, L., Bork, R., Bose, S., Brady, P. R., Braginsky, V. B., Brau, J. E., Brown, D. A., Bullington, A., Bunkowski, A., Buonanno, A., Burgess, R., Busby, D., Butler, W. E., Byer, R. L., Cadonati, L., Cagnoli, G., Camp, J. B., Cannizzo, J., Cannon, K., Cantley, C. A., Cao, J., Cardenas, L., Carter, K., Casey, M. M., Castiglione, J., Chandler, A., Chapsky, J., Charlton, P., Chatterji, S., Chelkowski, S., Chen, Y., Chickarmane, V., Chin, D., Christensen, N., Churches, D., Cokelaer, T., Colacino, C., Coldwell, R., Coles, M., Cook, D., Corbitt, T., Coyne, D., Creighton, J. D., Creighton, T. D., Crooks, D. R., Csatorday, P., Cusack, B. J., Cutler, C., Dalrymple, J., D'Ambrosio, E., Danzmann, K., Davies, G., Daw, E., DeBra, D., Delker, T., Dergachev, V., Desai, S., DeSalvo, R., Dhurandhar, S., Di Credico, A., Diaz, M., Ding, H., Drever, R. W., Dupuis, R. J., Edlund, J. A., Ehrens, P., Elliffe, E. J., Etzel, T., Evans, M., Evans, T., Fairhurst, S., Fallnich, C., Farnham, D., Fejer, M. M., Findley, T., Fine, M., Finn, L. S., Franzen, K. Y., Freise, A., Frey, R., Fritschel, P., Frolov, V. V., Fyffe, M., Ganezer, K. S., Garofoli, J., Giaime, J. A., Gillespie, A., Goda, K., Goggin, L., Gonzalez, G., Gossler, S., Grandclement, P., Grant, A., Gray, C., Gretarsson, A. M., Grimmett, D., GROTE, H., Grunewald, S., Guenther, M., Gustafson, E., Gustafson, R., Hamilton, W. O., Hammond, M., Hanna, C., Hanson, J., Hardham, C., Harms, J., Harry, G., Hartunian, A., Heefner, J., Hefetz, Y., Heinzel, G., Heng, I. S., Hennessy, M., Hepler, N., Heptonstall, A., Heurs, M., Hewitson, M., Hild, S., Hindman, N., Hoang, P., Hough, J., Hrynevych, M., Hua, W., Ito, M., Itoh, Y., Ivanov, A., Jennrich, O., Johnson, B., Johnson, W. W., Johnston, W. R., Jones, D. I., Jones, G., Jones, L., Jungwirth, D., Kalogera, V., Katsavounidis, E., Kawabe, K., Kells, W., Kern, J., Khan, A., Killbourn, S., Killow, C. J., Kim, C., King, C., King, P., Klimenko, S., Koranda, S., Koetter, K., Kovalik, J., Kozak, D., Krishnan, B., Landry, M., Langdale, J., Lantz, B., Lawrence, R., Lazzarini, A., Lei, M., Leonor, I., Libbrecht, K., Libson, A., Lindquist, P., Liu, S., Logan, J., Lormand, M., Lubinski, M., Lueck, H., Luna, M., Lyons, T. T., Machenschalk, B., MacInnis, M., Mageswaran, M., Mailand, K., Majid, W., Malec, M., Mandic, V., Mann, F., Marin, A., Marka, S., Maros, E., Mason, J., Mason, K., Matherny, O., Matone, L., Mavalvala, N., McCarthy, R., McClelland, D. E., McHugh, M., McNabb, J. W., Melissinos, A., Mendell, G., Mercer, R. A., Meshkov, S., Messaritaki, E., Messenger, C., Mikhailov, E., Mitra, S., Mitrofanov, V. P., Mitselmakher, G., Mittleman, R., Miyakawa, O., Mohanty, S., Moreno, G., Mossavi, K., Mueller, G., Mukherjee, S., Murray, P., Myers, E., Myers, J., Nagano, S., Nash, T., Nayak, R., Newton, G., Nocera, F., Noel, J. S., Nutzman, P., Olson, T., O'Reilly, B., Ottaway, D. J., Ottewill, A., Ouimette, D., Overmier, H., Owen, B. J., Pan, Y., Papa, M. A., Parameshwaraiah, V., Parameswariah, C., Pedraza, M., Penn, S., Pitkin, M., Plissi, M., Prix, R., Quetschke, V., Raab, F., Radkins, H., Rahkola, R., Rakhmanov, M., Rao, S. R., Rawlins, K., Ray-Majumder, S., Re, V., Redding, D., Regehr, M. W., Regimbau, T., Reid, S., Reilly, K. T., Reithmaier, K., Reitze, D. H., Richman, S., Riesen, R., Riles, K., Rivera, B., Rizzi, A., Robertson, D. I., Robertson, N. A., Robinson, C., Robison, L., Roddy, S., Rodriguez, A., Rollins, J., Romano, J. D., Romie, J., Rong, H., Rose, D., Rotthoff, E., Rowan, S., Ruediger, A., Ruet, L., Russell, P., Ryan, K., Salzman, I., Sandberg, V., Sanders, G. H., Sannibale, V., Sarin, P., Sathyaprakash, B., Saulson, P. R., Savage, R., Sazonov, A., Schilling, R., Schlaufman, K., Schmidt, V., Schnabel, R., Schofield, R., Schutz, B. F., Schwinberg, P., Scott, S. M., Seader, S. E., Searle, A. C., Sears, B., Seel, S., Seifert, F., Sellers, D., Sengupta, A. S., Shapiro, C. A., Shawhan, P., Shoemaker, D. H., Shu, Q. Z., Sibley, A., Siemens, X., Sievers, L., Sigg, D., Sintes, A. M., Smith, J. R., Smith, M., Smith, M. R., Sneddon, P. H., Spero, R., Spjeld, O., Stapfer, G., Steussy, D., Strain, K. A., Strom, D., Stuver, A., Summerscales, T., Sumner, M. C., Sung, M., Sutton, P. J., Sylvestre, J., Tanner, D. B., Tariq, H., Tarallo, M., Taylor, I., Taylor, R., Taylor, R., Thorne, K. A., Thorne, K. S., Tibbits, M., Tilav, S., Tinto, M., Tokmakov, K. V., Torres, C., Torrie, C., Traylor, G., Tyler, W., Ugolini, D., Ungarelli, C., Vallisneri, M., van Putten, M., Vass, S., Vecchio, A., Veitch, J., Vorvick, C., Vyachanin, S. P., Wallace, L., Walther, H., Ward, H., Ward, R., Ware, B., Watts, K., Webber, D., Weidner, A., Weiland, U., Weinstein, A., Weiss, R., Welling, H., Wen, L., Wen, S., Wette, K., Whelan, J. T., Whitcomb, S. E., Whiting, B. F., Wiley, S., Wilkinson, C., Willems, P. A., Williams, P. R., WILLIAMS, R., Willke, B., Wilson, A., Winjum, B. J., Winkler, W., Wise, S., Wiseman, A. G., Woan, G., Woods, D., Wooley, R., Worden, J., Wu, W., Yakushin, I., Yamamoto, H., Yoshida, S., Zaleski, K. D., Zanolin, M., Zawischa, I., Zhang, L., Zhu, R., Zotov, N., Zucker, M., Zweizig, J., Akutsu, T., Akutsu, T., Ando, M., Arai, K., ARAYA, A., Asada, H., Aso, Y., Beyersdorf, P., Fujiki, Y., Fujimoto, M., Fujita, R., Fukushima, M., Futamase, T., Hamuro, Y., Haruyama, T., Hayama, K., Iguchi, H., Iida, Y., Ioka, K., Ishitsuka, H., Kamikubota, N., Kanda, N., Kaneyama, T., Karasawa, Y., Kasahara, K., Kasai, T., Katsuki, M., Kawamura, S., Kawamura, M., Kawazoe, F., Kojima, Y., Kokeyama, K., Kondo, K., Kozai, Y., Kudoh, H., Kuroda, K., Kuwabara, T., Matsuda, N., Mio, N., Miura, K., Miyama, S., Miyoki, S., Mizusawa, H., Moriwaki, S., Musha, M., Nagayama, Y., Nakagawa, K., Nakamura, T., Nakano, H., Nakao, K., Nishi, Y., Numata, K., Ogawa, Y., Ohashi, M., Ohishi, N., Okutomi, A., Oohara, K., Otsuka, S., Saito, Y., Sakata, S., Sasaki, M., Sato, N., Sato, S., Sato, Y., Sato, K., Sekido, A., Seto, N., Shibata, M., Shinkai, H., Shintomi, T., Soida, K., Somiya, K., Suzuki, T., Tagoshi, H., Takahashi, H., Takahashi, R., Takamori, A., Takemoto, S., Takeno, K., Tanaka, T., Taniguchi, K., Tanji, T., Tatsumi, D., Telada, S., Tokunari, M., Tomaru, T., Tsubono, K., Tsuda, N., Tsunesada, Y., Uchiyama, T., Ueda, K., Ueda, A., Waseda, K., Yamamoto, A., Yamamoto, K., Yamazaki, T., Yanagi, Y., Yokoyama, J., Yoshida, T., Zhu, Z. 2006; 73 (10)
  • DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching JOURNAL OF THE AMERICAN CHEMICAL SOCIETY Lu, Y. R., Bangsaruntip, S., Wang, X. R., Zhang, L., Nishi, Y., Dai, H. J. 2006; 128 (11): 3518-3519

    Abstract

    For single-walled carbon nanotube (SWNT) field effect transistors, vertical scaling of high kappa dielectrics by atomic layer deposition (ALD) currently stands at approximately 8 nm with a subthreshold swing S approximately 70-90 mV/decade at room temperature. ALD on as-grown pristine SWNTs is incapable of producing a uniform and conformal dielectric layer due to the lack of functional groups on nanotubes and because nucleation of an oxide dielectric layer in the ALD process hinges upon covalent chemisorption on reactive groups on surfaces. Here, we show that by noncovalent functionalization of SWNTs with poly-T DNA molecules (dT40-DNA), one can impart functional groups of sufficient density and stability for uniform and conformal ALD of high kappa dielectrics on SWNTs with thickness down to 2-3 nm. This enables approaching the ultimate vertical scaling limit of nanotube FETs and reliably achieving S approximately 60 mV/decade at room temperature, and S approximately 50 mV/decade in the band-to-band tunneling regime of ambipolar transport. We have also carried out microscopy investigations to understand ALD processes on SWNTs with and without DNA functionalization.

    View details for DOI 10.1021/ja058836v

    View details for Web of Science ID 000236299700024

    View details for PubMedID 16536515

  • Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires APPLIED PHYSICS LETTERS Jagannathan, H., Nishi, Y., Reuter, M., Copel, M., Tutuc, E., Guha, S., Pezzi, R. P. 2006; 88 (10)

    View details for DOI 10.1063/1.2179370

    View details for Web of Science ID 000235905800071

  • Theoretical investigation of performance in uniaxially- and biaxially-strained Si, SiGe and Ge double-gate p-MOSFETs 2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 Krishnamohan, T., Jungernann, C., Kim, D., Ungersboeck, E., Selberherr, S., Wong, P., Nishi, Y., Saraswat, K. 2006: 681-684
  • Silicon-based photonic crystal nanocavity light emitters 2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Makarova, M., Vnekovic, J., Sanda, H., Nishi, Y. 2006: 240-241
  • Upper limits from the LIGO and TAMA detectors on the rate of gravitational-wave bursts PHYSICAL REVIEW D Abbott, B., Abbott, R., Adhikari, R., Ageev, A., Agresti, J., Ajith, P., Allen, B., Allen, J., Amin, R., Anderson, S. B., Anderson, W. G., Araya, M., Armandula, H., Ashley, M., Asiri, F., Aufmuth, P., Aulbert, C., Babak, S., Balasubramanian, R., Ballmer, S., Barish, B. C., Barker, C., Barker, D., Barnes, M., Barr, B., Barton, M. A., Bayer, K., Beausoleil, R., Belczynski, K., Bennett, R., Berukoff, S. J., Betzwieser, J., Bhawal, B., Bilenko, I. A., Billingsley, G., Black, E., Blackburn, K., Blackburn, L., Bland, B., Bochner, B., Bogue, L., Bork, R., Bose, S., Brady, P. R., Braginsky, V. B., Brau, J. E., Brown, D. A., Bullington, A., Bunkowski, A., Buonanno, A., Burgess, R., Busby, D., Butler, W. E., Byer, R. L., Cadonati, L., Cagnoli, G., Camp, J. B., Cannizzo, J., Cannon, K., Cantley, C. A., Cao, J., Cardenas, L., Carter, K., Casey, M. M., Castiglione, J., Chandler, A., Chapsky, J., Charlton, P., Chatterji, S., Chelkowski, S., Chen, Y., Chickarmane, V., Chin, D., Christensen, N., Churches, D., Cokelaer, T., Colacino, C., Coldwell, R., Coles, M., Cook, D., Corbitt, T., Coyne, D., Creighton, J. D., Creighton, T. D., Crooks, D. R., Csatorday, P., Cusack, B. J., Cutler, C., Dalrymple, J., D'Ambrosio, E., Danzmann, K., Davies, G., Daw, E., DeBra, D., Delker, T., Dergachev, V., Desai, S., DeSalvo, R., Dhurandhar, S., Di Credico, A., Diaz, M., Ding, H., Drever, R. W., Dupuis, R. J., Edlund, J. A., Ehrens, P., Elliffe, E. J., Etzel, T., Evans, M., Evans, T., Fairhurst, S., Fallnich, C., Farnham, D., Fejer, M. M., Findley, T., Fine, M., Finn, L. S., Franzen, K. Y., Freise, A., Frey, R., Fritschel, P., Frolov, V. V., Fyffe, M., Ganezer, K. S., Garofoli, J., Giaime, J. A., Gillespie, A., Goda, K., Goggin, L., Gonzalez, G., Gossler, S., Grandclement, P., Grant, A., Gray, C., Gretarsson, A. M., Grimmett, D., GROTE, H., Grunewald, S., Guenther, M., Gustafson, E., Gustafson, R., Hamilton, W. O., Hammond, M., Hanna, C., Hanson, J., Hardham, C., Harms, J., Harry, G., Hartunian, A., Heefner, J., Hefetz, Y., Heinzel, G., Heng, I. S., Hennessy, M., Hepler, N., Heptonstall, A., Heurs, M., Hewitson, M., Hild, S., Hindman, N., Hoang, P., Hough, J., Hrynevych, M., Hua, W., Ito, M., Itoh, Y., Ivanov, A., Jennrich, O., Johnson, B., Johnson, W. W., Johnston, W. R., Jones, D. I., Jones, G., Jones, L., Jungwirth, D., Kalogera, V., Katsavounidis, E., Kawabe, K., Kells, W., Kern, J., Khan, A., Killbourn, S., Killow, C. J., Kim, C., King, C., King, P., Klimenko, S., Koranda, S., Kotter, K., Kovalik, J., Kozak, D., Krishnan, B., Landry, M., Langdale, J., Lantz, B., Lawrence, R., Lazzarini, A., Lei, M., Leonor, I., Libbrecht, K., Libson, A., Lindquist, P., Liu, S., Logan, J., Lormand, M., Lubinski, M., Luck, H., Luna, M., Lyons, T. T., Machenschalk, B., MacInnis, M., Mageswaran, M., Mailand, K., Majid, W., Malec, M., Mandic, V., Mann, F., Marin, A., Marka, S., Maros, E., Mason, J., Mason, K., Matherny, O., Matone, L., Mavalvala, N., McCarthy, R., McClelland, D. E., McHugh, M., McNabb, J. W., Melissinos, A., Mendell, G., Mercer, R. A., Meshkov, S., Messaritaki, E., Messenger, C., Mikhailov, E., Mitra, S., Mitrofanov, V. P., Mitselmakher, G., Mittleman, R., Miyakawa, O., Mohanty, S., Moreno, G., Mossavi, K., Mueller, G., Mukherjee, S., Murray, P., Myers, E., Myers, J., Nagano, S., Nash, T., Nayak, R., Newton, G., Nocera, F., Noel, J. S., Nutzman, P., Olson, T., O'Reilly, B., Ottaway, D. J., Ottewill, A., Ouimette, D., Overmier, H., Owen, B. J., Pan, Y., Papa, M. A., Parameshwaraiah, V., Parameswariah, C., Pedraza, M., Penn, S., Pitkin, M., Plissi, M., Prix, R., Quetschke, V., Raab, F., Radkins, H., Rahkola, R., Rakhmanov, M., Rao, S. R., Rawlins, K., Ray-Majumder, S., Re, V., Redding, D., Regehr, M. W., Regimbau, T., Reid, S., Reilly, K. T., Reithmaier, K., Reitze, D. H., Richman, S., Riesen, R., Riles, K., Rivera, B., Rizzi, A., Robertson, D. I., Robertson, N. A., Robinson, C., Robison, L., Roddy, S., Rodriguez, A., Rollins, J., Romano, J. D., Romie, J., Rong, H., Rose, D., Rotthoff, E., Rowan, S., Rudiger, A., Ruet, L., Russell, P., Ryan, K., Salzman, I., Sandberg, V., Sanders, G. H., Sannibale, V., Sarin, P., Sathyaprakash, B., Saulson, P. R., Savage, R., Sazonov, A., Schilling, R., Schlaufman, K., Schmidt, V., Schnabel, R., Schofield, R., Schutz, B. F., Schwinberg, P., Scott, S. M., Seader, S. E., Searle, A. C., Sears, B., Seel, S., Seifert, F., Sellers, D., Sengupta, A. S., Shapiro, C. A., Shawhan, P., Shoemaker, D. H., Shu, Q. Z., Sibley, A., Siemens, X., Sievers, L., Sigg, D., Sintes, A. M., Smith, J. R., Smith, M., Smith, M. R., Sneddon, P. H., Spero, R., Spjeld, O., Stapfer, G., Steussy, D., Strain, K. A., Strom, D., Stuver, A., Summerscales, T., Sumner, M. C., Sung, M., Sutton, P. J., Sylvestre, J., Tanner, D. B., Tariq, H., Tarallo, M., Taylor, I., Taylor, R., Taylor, R., Thorne, K. A., Thorne, K. S., Tibbits, M., Tilav, S., Tinto, M., Tokmakov, K. V., Torres, C., Torrie, C., Traylor, G., Tyler, W., Ugolini, D., Ungarelli, C., Vallisneri, M., van Putten, M., Vass, S., Vecchio, A., Veitch, J., Vorvick, C., Vyachanin, S. P., Wallace, L., Walther, H., Ward, H., Ward, R., Ware, B., Watts, K., Webber, D., Weidner, A., Weiland, U., Weinstein, A., Weiss, R., Welling, H., Wen, L., Wen, S., Wette, K., Whelan, J. T., Whitcomb, S. E., Whiting, B. F., Wiley, S., Wilkinson, C., Willems, P. A., Williams, P. R., WILLIAMS, R., Willke, B., Wilson, A., Winjum, B. J., Winkler, W., Wise, S., Wiseman, A. G., Woan, G., Woods, D., Wooley, R., Worden, J., Wu, W., Yakushin, I., Yamamoto, H., Yoshida, S., Zaleski, K. D., Zanolin, M., Zawischa, I., Zhang, L., Zhu, R., Zotov, N., Zucker, M., Zweizig, J., Akutsu, T., Akutsu, T., Ando, M., Arai, K., ARAYA, A., Asada, H., Aso, Y., Beyersdorf, P., Fujiki, Y., Fujimoto, M. K., Fujita, R., Fukushima, M., Futamase, T., Hamuro, Y., Haruyama, T., Hayama, K., Iguchi, H., Iida, Y., Ioka, K., Ishizuka, H., Kamikubota, N., Kanda, N., Kaneyama, T., Karasawa, Y., Kasahara, K., Kasai, T., Katsuki, M., Kawamura, S., Kawamura, M., Kawazoe, F., Kojima, Y., Kokeyama, K., Kondo, K., Kozai, Y., Kudoh, H., Kuroda, K., Kuwabara, T., Matsuda, N., Mio, N., Miura, K., Miyama, S., Miyoki, S., Mizusawa, H., Moriwaki, S., Musha, M., Nagayama, Y., Nakagawa, K., Nakamura, T., Nakano, H., Nakao, K., Nishi, Y., Numata, K., Ogawa, Y., Ohashi, M., Ohishi, N., Okutomi, A., Oohara, K., Otsuka, S., Saito, Y., Sakata, S., Sasaki, M., Sato, N., Sato, S., Sato, Y., Sato, K., Sekido, A., Seto, N., Shibata, M., Shinkai, H., Shintomi, T., Soida, K., Somiya, K., Suzuki, T., Tagoshi, H., Takahashi, H., Takahashi, R., Takamori, A., Takemoto, S., Takeno, K., Tanaka, T., Taniguchi, K., Tanji, T., Tatsumi, D., Telada, S., Tokunari, M., Tomaru, T., Tsubono, K., Tsuda, N., Tsunesada, Y., Uchiyama, T., Ueda, K., Ueda, A., Waseda, K., Yamamoto, A., Yamamoto, K., Yamazaki, T., Yanagi, Y., Yokoyama, J., Yoshida, T., Zhu, Z. H. 2005; 72 (12)
  • Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA Zhang, G. Y., Mann, D., Zhang, L., Javey, A., Li, Y. M., Yenilmez, E., Wang, Q., McVittie, J. P., Nishi, Y., Gibbons, J., Dai, H. J. 2005; 102 (45): 16141-16145

    Abstract

    An oxygen-assisted hydrocarbon chemical vapor deposition method is developed to afford large-scale, highly reproducible, ultra-high-yield growth of vertical single-walled carbon nanotubes (V-SWNTs). It is revealed that reactive hydrogen species, inevitable in hydrocarbon-based growth, are damaging to the formation of sp(2)-like SWNTs in a diameter-dependent manner. The addition of oxygen scavenges H species and provides a powerful control over the C/H ratio to favor SWNT growth. The revelation of the roles played by hydrogen and oxygen leads to a unified and universal optimum-growth condition for SWNTs. Further, a versatile method is developed to form V-SWNT films on any substrate, lifting a major substrate-type limitation for aligned SWNTs.

    View details for DOI 10.1073/pnas.0507064102

    View details for Web of Science ID 000233283700005

    View details for PubMedID 16263931

  • Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2 IEEE ELECTRON DEVICE LETTERS Lu, C. H., Wong, G. M., Deal, M. D., Tsai, W., Majhi, P., Chui, C. O., Visokay, M. R., Chambers, J. J., Colombo, L., Clemens, B. M., Nishi, Y. 2005; 26 (7): 445-447
  • Ab initio study of metal gate electrode work function APPLIED PHYSICS LETTERS Park, S., Colombo, L., Nishi, Y., Cho, K. 2005; 86 (7)

    View details for DOI 10.1063/1.1865349

    View details for Web of Science ID 000227439400092

  • Edge-defined 90nm TFTs with adjustable V-T in a 3-D compatible process 2005 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS Nasrullah, J., BURR, J. B., Tyler, G. L., Nishi, Y. 2005: 27-29
  • Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST Sanda, H., McVittie, J., Koto, M., Yamagata, K., Yonebara, T., Nishi, Y. 2005: 695-698
  • Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST Uchida, K., Krishnamohan, T., Saraswat, K. C., Nishi, Y. 2005: 135-138
  • New constraint for Vth optimization for sub 32nm node CMOS gates scaling IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST Morifuji, E., Kapur, P., Chao, A. K., Nishi, Y. 2005: 1049-1052
  • Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT) 2005 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., Saraswat, K. C. 2005: 82-83
  • Preferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method NANO LETTERS Li, Y. M., Mann, D., Rolandi, M., Kim, W., Ural, A., Hung, S., Javey, A., Cao, J., Wang, D. W., Yenilmez, E., Wang, Q., Gibbons, J. F., Nishi, Y., Dai, H. J. 2004; 4 (2): 317-321

    View details for DOI 10.1021/nl035097c

    View details for Web of Science ID 000188965700025

  • Power optimization of future transistors and a resulting global comparison standard IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST Kapur, P., Shenoy, R. S., Chao, A. K., Nishi, Y., Saraswat, K. C. 2004: 415-418
  • Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST Uchida, K., Zednik, R., Lu, C. H., Jagannathan, H., McVittie, J., McIntyre, P. C., Nishi, Y. 2004: 229-232
  • Critical evaluation of the safety of recombinant human growth hormone administration: Statement from the growth hormone research society JOURNAL OF CLINICAL ENDOCRINOLOGY & METABOLISM Christiansen, J. S., Bengtsson, B. A., Thorner, M. O., Hintz, R., Sonksen, P. H., Cohen, P., Clemmons, D., Strasburger, C. J., Carlsson, L., Tanaka, T., ROBINSON, I., Jorgensen, J. O., Johannson, G., Clayton, P. E., Cowell, C. T., Malozowski, S. N., Hankinson, S., Yee, D., Baxter, R., Swerdlow, A., Rosenfeld, R., Fradkin, J. E., Nishi, Y., Monson, J. P., Van den Berghe, G., Carroll, P. V., Takala, J., van der Lely, A. J., Pollak, M. N., LeRoith, D., Tachibana, K., Kappelgaard, A. M., Langbakke, I., Lippe, B., Wilton, P., Stein, P., Salazar, D. E., Maneatis, T., Blethen, S. L., Cutler, G. B., Blum, W. F., Svanberg, E., Gertner, J. M., Shimatsu, A., Takahashi, H. 2001; 86 (5): 1868-1870

    View details for Web of Science ID 000168731600004

    View details for PubMedID 11344173

  • Consensus guidelines for the diagnosis and treatment of growth hormone (GH) deficiency in childhood and adolescence: Summary statement of the GH Research Society JOURNAL OF CLINICAL ENDOCRINOLOGY & METABOLISM Israel, E., Attie, K. M., Bengtsson, B. A., Blethen, S. L., Blum, W., Cameron, F., Carel, J. C., Carlsson, L., Chipman, J. J., Christiansen, J. S., Clayton, P., Clemmons, D. R., Cohen, P., Drop, S., Fujieda, K., Ghigo, E., Hintz, R. L., Ho, K., Ilondo, M. M., Jasper, H., Jesussek, B., Kappelgaard, A. M., Laron, Z., Lippe, B. M., Malozowski, S., Mullis, P. E., de Munick-Keizer-Schrama, S., Nishi, Y., Parks, J. S., Phelps, C., Ranke, M., ROBINSON, I., Rosenfeld, R. G., Rose, S., Saenger, P., Saggese, G., Savage, M., Shalet, S., Sizonenko, P. C., Strasburger, C., Tachibana, K., Tanaka, T., Thorner, M. O., Wikland, K. A., Zadik, Z. 2000; 85 (11): 3990-3993
  • Analysis of the potential distribution in the channel region of a platinum silicided source drain metal oxide semiconductor field effect transistor APPLIED PHYSICS LETTERS Snyder, J. P., Helms, C. R., Nishi, Y. 1999; 74 (22): 3407-3409
  • EXPERIMENTAL INVESTIGATION OF A PTSI SOURCE AND DRAIN FIELD-EMISSION TRANSISTOR APPLIED PHYSICS LETTERS Snyder, J. P., Helms, C. R., Nishi, Y. 1995; 67 (10): 1420-1422

Conference Proceedings


  • Quasi Passive Optical Switch Based on Transition Metal Oxide Device Yen, S., Takashima, Y., Tendulkar, M., Jameson, J. R., Nishi, Y., Kazovsky, L. G. IEEE. 2011
  • Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si Kobayashi, S., Nishi, Y., Saraswat, K. C. ELSEVIER SCIENCE SA. 2010: S136-S139
  • Quasi-Passive and Reconfigurable Node for Optical Access Network Yen, S., Tendulkar, M., Jameson, J. R., Yamashita, S., Nishi, Y., Solgaard, O., Kazovsky, L. G. IEEE. 2010
  • Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory-experimental demonstration and analysis Kim, S., Zhang, Y., McVittie, J. P., Jagannathan, H., Nishi, Y., Wong, H. P. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2008: 2307-2313
  • High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Pham, A., Meinerzhagen, B., Wong, P., Nishi, Y., Saraswat, K. C. ELSEVIER SCIENCE BV. 2007: 2063-2066
  • An integrated phase change memory cell with Ge nanowire diode for cross-point memory Zhang, Y., Kim, S., McVittie, J. P., Jagannathan, H., Ratchford, J. B., Chidsey, C. E., Nishi, Y., Wong, H. P. JAPAN SOCIETY APPLIED PHYSICS. 2007: 98-99
  • An atomic force microscope study of surface roughness of thin silicon films deposited on SiO2 Nasrullah, J., Tyler, G. L., Nishi, Y. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2005: 303-311