Yoshio Nishi

All Publications

• Carbon nanotube thermoelectric devices by direct printing: Toward wearable energy converters APPLIED PHYSICS LETTERS Lee, H., Furukawa, N., Ricco, A. J., Pop, E., Cui, Y., Nishi, Y. 2021; 118 (17)

  View details for DOI 10.1063/5.0042349

  View details for Web of Science ID 000677695700001

• Three-Dimensional Analysis of Particle Distribution on Filter Layers inside N95 Respirators by Deep Learning. Nano letters Lee, H. R., Liao, L., Xiao, W., Vailionis, A., Ricco, A. J., White, R., Nishi, Y., Chiu, W., Chu, S., Cui, Y. 2020

  Abstract

  The global COVID-19 pandemic has changed many aspects of daily lives. Wearing personal protective equipment, especially respirators (face masks), has become common for both the public and medical professionals, proving to be effective in preventing spread of the virus. Nevertheless, a detailed understanding of respirator filtration-layer internal structures and their physical configurations is lacking. Here, we report three-dimensional (3D) internal analysis of N95 filtration layers via X-ray tomography. Using deep learning methods, we uncover how the distribution and diameters of fibers within these layers directly affect contaminant particle filtration. The average porosity of the filter layers is found to be 89.1%. Contaminants are more efficiently captured by denser fiber regions, with fibers <1.8 mum in diameter being particularly effective, presumably because of the stronger electric field gradient on smaller diameter fibers. This study provides critical information for further development of N95-type respirators that combine high efficiency with good breathability.

  View details for DOI 10.1021/acs.nanolett.0c04230

  View details for PubMedID 33283521

• Bidirectional Analog Conductance Modulation for RRAM-Based Neural Networks IEEE TRANSACTIONS ON ELECTRON DEVICES Jiang, Z., Wang, Z., Zheng, X., Fong, S. W., Qin, S., Chen, H., Ahn, E. C., Cao, J., Nishi, Y., Wong, S., Wong, H. 2020; 67 (11): 4904–10

  View details for DOI 10.1109/TED.2020.3025849

  View details for Web of Science ID 000584285700062

• Effect of IrO2 Spatial Distribution on the Stability and Charge Distribution of Ti1-xIrxO2 Alloys CHEMISTRY OF MATERIALS Villena, M. A., Magyari-Kope, B., Nishi, Y., McIntyre, P. C., Lanza, M. 2019; 31 (21): 8742–51

  View details for DOI 10.1021/acs.chemmater.9b02507

  View details for Web of Science ID 000497262500016

• Intrinsic limits of leakage current in self-heating-triggered threshold switches APPLIED PHYSICS LETTERS Wang, Z., Kumar, S., Williams, R., Nishi, Y., Wong, H. 2019; 114 (18)

  View details for DOI 10.1063/1.5089261

  View details for Web of Science ID 000467699000023

• Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY Tsai, Y., Magyari-Kope, B., Li, Y., Samukawa, S., Nishi, Y., Sze, S. M. 2019; 7 (1): 322–28

  View details for DOI 10.1109/JEDS.2019.2897167

  View details for Web of Science ID 000460753000046

• Contact Engineering High-Performance n-Type MoTe2 Transistors. Nano letters Mleczko, M. J., Yu, A. C., Smyth, C. M., Chen, V. n., Shin, Y. C., Chatterjee, S. n., Tsai, Y. C., Nishi, Y. n., Wallace, R. M., Pop, E. n. 2019

  Abstract

  Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate band gap, similar to silicon. However, this material remains underexplored for 2D electronics due to ambient instability and predominantly p-type Fermi level pinning at contacts. Here, we demonstrate unipolar n-type MoTe2 transistors with the highest performance to date, including high saturation current (>400 μA/μm at 80 K and >200 μA/μm at 300 K) and relatively low contact resistance (1.2 to 2 kΩ·μm from 80 to 300 K), achieved with Ag contacts and AlO x encapsulation. We also investigate other contact metals (Sc, Ti, Cr, Au, Ni, Pt), extracting their Schottky barrier heights using an analytic subthreshold model. High-resolution X-ray photoelectron spectroscopy reveals that interfacial metal-Te compounds dominate the contact resistance. Among the metals studied, Sc has the lowest work function but is the most reactive, which we counter by inserting monolayer hexagonal boron nitride between MoTe2 and Sc. These metal-insulator-semiconductor (MIS) contacts partly depin the metal Fermi level and lead to the smallest Schottky barrier for electron injection. Overall, this work improves our understanding of n-type contacts to 2D materials, an important advance for low-power electronics.

  View details for DOI 10.1021/acs.nanolett.9b02497

  View details for PubMedID 31314531

• Formation of epitaxial Hf digermanide/Ge(001) contact and its crystalline properties JAPANESE JOURNAL OF APPLIED PHYSICS Nakatsuka, O., Suzuki, A., McVittie, J., Nishi, Y., Zaima, S. 2018; 57 (7)

  View details for DOI 10.7567/JJAP.57.07MA05

  View details for Web of Science ID 000439389500006

• Copper interstitial recombination centers in Cu3N PHYSICAL REVIEW B Yee, Y., Inoue, H., Hultqvist, A., Hanifi, D., Salleo, A., Magyari-Kope, B., Nishi, Y., Bent, S. F., Clemens, B. M. 2018; 97 (24)

  View details for DOI 10.1103/PhysRevB.97.245201

  View details for Web of Science ID 000434016100006

• Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism APPLIED PHYSICS LETTERS Wang, Z., Kumar, S., Nishi, Y., Wong, H. 2018; 112 (19)

  View details for DOI 10.1063/1.5027152

  View details for Web of Science ID 000431980100044

• Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2-x APL MATERIALS Magyari-Koepe, B., Song, Y., Duncan, D., Zhao, L., Nishi, Y. 2018; 6 (5)

  View details for DOI 10.1063/1.5032120

  View details for Web of Science ID 000433944800008

• Effect of thermal insulation on the electrical characteristics of NbOx threshold switches APPLIED PHYSICS LETTERS Wang, Z., Kumar, S., Wong, H., Nishi, Y. 2018; 112 (7)

  View details for DOI 10.1063/1.5015941

  View details for Web of Science ID 000425493600036

• HfO2/Ti Interface Mediated Conductive Filament Formation in RRAM: An Ab Initio Study IEEE TRANSACTIONS ON ELECTRON DEVICES Traore, B., Blaise, P., Sklenard, B., Vianello, E., Magyari-Kope, B., Nishi, Y. 2018; 65 (2): 507–13

  View details for DOI 10.1109/TED.2017.2785352

  View details for Web of Science ID 000423124500019

• A Bi-stable 1-/2-Transistor SRAM in 14 nm FinFET Technology for High Density / High Performance Embedded Applications Widjaja, Y., Wilson, J., Tu Nguyen, Han, J., Norwood, C., Maheshwari, D., Lai, S., Vorenkamp, P., Or-Bach, Z., Nishi, Y., IEEE IEEE. 2018

  View details for Web of Science ID 000459882300076

• Physical origins of current and temperature controlled negative differential resistances in NbO2 NATURE COMMUNICATIONS Kumar, S., Wang, Z., Davila, N., Kumari, N., Norris, K. J., Huang, X., Strachan, J., Vine, D., Kilcoyne, A., Nishi, Y., Williams, R. 2017; 8: 658

  Abstract

  Negative differential resistance behavior in oxide memristors, especially those using NbO2, is gaining renewed interest because of its potential utility in neuromorphic computing. However, there has been a decade-long controversy over whether the negative differential resistance is caused by a relatively low-temperature non-linear transport mechanism or a high-temperature Mott transition. Resolving this issue will enable consistent and robust predictive modeling of this phenomenon for different applications. Here we examine NbO2 memristors that exhibit both a current-controlled and a temperature-controlled negative differential resistance. Through thermal and chemical spectromicroscopy and numerical simulations, we confirm that the former is caused by a ~400 K non-linear-transport-driven instability and the latter is caused by the ~1000 K Mott metal-insulator transition, for which the thermal conductance counter-intuitively decreases in the metallic state relative to the insulating state.The development of future computation devices will be aided by a better understanding of the physics underlying material behaviors. Using thermoreflectance and spatially resolved X-ray microscopy, Kumar et al. elucidate the origin of two types of negative differential resistance in NbO2 memristors.

  View details for PubMedID 28939848

• HfSe2 and ZrSe2: Two-dimensional semiconductors with native high-κ oxides. Science advances Mleczko, M. J., Zhang, C., Lee, H. R., Kuo, H. H., Magyari-Köpe, B., Moore, R. G., Shen, Z. X., Fisher, I. R., Nishi, Y., Pop, E. 2017; 3 (8): e1700481

  Abstract

  The success of silicon as a dominant semiconductor technology has been enabled by its moderate band gap (1.1 eV), permitting low-voltage operation at reduced leakage current, and the existence of SiO2 as a high-quality "native" insulator. In contrast, other mainstream semiconductors lack stable oxides and must rely on deposited insulators, presenting numerous compatibility challenges. We demonstrate that layered two-dimensional (2D) semiconductors HfSe2 and ZrSe2 have band gaps of 0.9 to 1.2 eV (bulk to monolayer) and technologically desirable "high-κ" native dielectrics HfO2 and ZrO2, respectively. We use spectroscopic and computational studies to elucidate their electronic band structure and then fabricate air-stable transistors down to three-layer thickness with careful processing and dielectric encapsulation. Electronic measurements reveal promising performance (on/off ratio > 106; on current, ~30 μA/μm), with native oxides reducing the effects of interfacial traps. These are the first 2D materials to demonstrate technologically relevant properties of silicon, in addition to unique compatibility with high-κ dielectrics, and scaling benefits from their atomically thin nature.

  View details for DOI 10.1126/sciadv.1700481

  View details for PubMedID 28819644

  View details for PubMedCentralID PMC5553816

• Ultra-thin and high-response transparent and flexible heater based on carbon nanotube film APPLIED PHYSICS LETTERS Kim, Y., Lee, H. R., Saito, T., Nishi, Y. 2017; 110 (15)

  View details for DOI 10.1063/1.4978596

  View details for Web of Science ID 000399689400030

• Properties of Dopants in HfOx for Improving the Performance of Nonvolatile Memory PHYSICAL REVIEW APPLIED Duncan, D., Magyari-Kope, B., Nishi, Y. 2017; 7 (3)

  View details for DOI 10.1103/PhysRevApplied.7.034020

  View details for Web of Science ID 000399280700005

• Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors CHEMISTRY OF MATERIALS Lee, T. H., Kim, K., Kim, G., Park, H. J., Scullion, D., Shaw, L., Kim, M., Gu, X., Bae, W., Santos, E. J., Lee, Z., Shin, H. S., Nishi, Y., Bao, Z. 2017; 29 (5): 2341-2347

  View details for DOI 10.1021/acs.chemmater.6b05517

  View details for Web of Science ID 000396639400049

• Oxygen migration during resistance switching and failure of hafnium oxide memristors APPLIED PHYSICS LETTERS Kumar, S., Wang, Z., Huang, X., Kumari, N., Davila, N., Strachan, J. P., Vine, D., Kilcoyne, A. L., Nishi, Y., Williams, R. S. 2017; 110 (10)

  View details for DOI 10.1063/1.4974535

  View details for Web of Science ID 000397871800046

• Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Guo, X., Pei, D., Zheng, H., Li, W., Shohet, J. L., King, S. W., Lin, Y., Fung, H., Chen, C., Nishi, Y. 2017; 35 (2)

  View details for DOI 10.1116/1.4974315

  View details for Web of Science ID 000397762400035

• Polaronic interactions between oxygen vacancies in rutile TiO2 PHYSICAL REVIEW B Zhao, L., Magyari-Koepe, B., Nishi, Y. 2017; 95 (5)

  View details for DOI 10.1103/PhysRevB.95.054104

  View details for Web of Science ID 000393497900002

• Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors. Nanoscale Kumar, S., Davila, N., Wang, Z., Huang, X., Strachan, J. P., Vine, D., David Kilcoyne, A. L., Nishi, Y., Stanley Williams, R. 2017; 9 (5): 1793-1798

  Abstract

  We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ per bit per μm(2)), low read-power (∼nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.

  View details for DOI 10.1039/c6nr07671h

  View details for PubMedID 27906408

• Formation of Epitaxial Hf Germanide/Ge Contacts for Schottky Barrier Height Engineering Nakatsuka, O., Suzuki, A., McVittie, J., Nishi, Y., Zaima, S., IEEE IEEE. 2017: 47–48

  View details for Web of Science ID 000427060000014

• Ferroelectric Switching Pathways and Energetics in (Hf,Zr)O-2 Barabash, S. V., Pramanik, D., Zhai, Y., Magyari-Kope, B., Nishi, Y., Shingubara, S., Karim, Z., MagyariKope, B., Shima, H., Kubota, H., Park, J. G., Kobayashi, K., Goux, L., Bersuker, G., Saito, Y. ELECTROCHEMICAL SOC INC. 2017: 107–21

  View details for DOI 10.1149/07532.0107ecst

  View details for Web of Science ID 000435221100011

• Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors ACS NANO Kumar, S., Wang, Z., Huang, X., Kumari, N., Davila, N., Strachan, J. P., Vine, D., Kilcoyne, A. L., Nishi, Y., Williams, R. S. 2016; 10 (12): 11205-11210

  Abstract

  Transition-metal-oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating power, endurance, speed, and density. Their commercial deployment critically depends on predictive compact models based on understanding nanoscale physicochemical forces, which remains elusive and controversial owing to the difficulties in directly observing atomic motions during resistive switching, Here, using scanning transmission synchrotron X-ray spectromicroscopy to study in situ switching of hafnium oxide memristors, we directly observed the formation of a localized oxygen-deficiency-derived conductive channel surrounded by a low-conductivity ring of excess oxygen. Subsequent thermal annealing homogenized the segregated oxygen, resetting the cells toward their as-grown resistance state. We show that the formation and dissolution of the conduction channel are successfully modeled by radial thermophoresis and Fick diffusion of oxygen atoms driven by Joule heating. This confirmation and quantification of two opposing nanoscale radial forces that affect bipolar memristor switching are important components for any future physics-based compact model for the electronic switching of these devices.

  View details for DOI 10.1021/acsnano.6b06275

  View details for Web of Science ID 000391079700065

  View details for PubMedID 27957851

• Influence of porosity on electrical properties of low-k dielectrics irradiated with vacuum-ultraviolet radiation APPLIED PHYSICS LETTERS CHOUDHURY, F. A., Nguyen, H. M., Baklanov, M. R., de Marneffe, J. F., Li, W., Pei, D., Benjamin, D. I., Zheng, H., King, S. W., Lin, Y., Fung, H., Chen, C., Nishi, Y., Shohet, J. L. 2016; 109 (12)

  View details for DOI 10.1063/1.4962899

  View details for Web of Science ID 000384558700047

• The effect of vacuum ultraviolet irradiation on the time-dependent dielectric breakdown of organosilicate dielectrics APPLIED PHYSICS LETTERS Pei, D., Xue, P., Li, W., Guo, X., Lin, Y. H., Fung, H. S., Chen, C. C., Nishi, Y., Shohet, J. L. 2016; 109 (12)

  View details for DOI 10.1063/1.4962949

  View details for Web of Science ID 000384558700050

• High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2. ACS nano Mleczko, M. J., Xu, R. L., Okabe, K., Kuo, H., Fisher, I. R., Wong, H. P., Nishi, Y., Pop, E. 2016; 10 (8): 7507-7514

  Abstract

  Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically thin limit. Here, we introduce a facile growth mechanism for semimetallic WTe2 crystals and then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 μm long devices allow us to separate intrinsic and contact resistance, revealing metallic response in the thinnest encapsulated and stable WTe2 devices studied to date (3-20 layers thick). High-field electrical measurements and electrothermal modeling demonstrate that ultrathin WTe2 can carry remarkably high current density (approaching 50 MA/cm(2), higher than most common interconnect metals) despite a very low thermal conductivity (of the order ∼3 Wm(-1) K(-1)). These results suggest several pathways for air-stable technological viability of this layered semimetal.

  View details for DOI 10.1021/acsnano.6b02368

  View details for PubMedID 27434729

• Effects of ultraviolet (UV) irradiation in air and under vacuum on low-k dielectrics AIP ADVANCES CHOUDHURY, F. A., Ryan, E. T., Nguyen, H. M., Nishi, Y., Shohet, J. L. 2016; 6 (7)

  View details for DOI 10.1063/1.4959277

  View details for Web of Science ID 000382403600012

• Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics APPLIED PHYSICS LETTERS Zheng, H., Guo, X., Pei, D., Li, W., Blatz, J., Hsu, K., Benjamin, D., Lin, Y., Fung, H., Chen, C., Nishi, Y., Shohet, J. L. 2016; 108 (24)

  View details for DOI 10.1063/1.4954176

  View details for Web of Science ID 000379037200055

• First-principles study of carbon impurity effects in the pseudo-hexagonal Ta2O5 CURRENT APPLIED PHYSICS Kim, J., Magyari-Kope, B., Nishi, Y., Ahn, J. 2016; 16 (6): 638-643

  View details for DOI 10.1016/j.cap.2016.03.014

  View details for Web of Science ID 000374659600006

• Kinetic Study of Hydrogen Evolution Reaction over Strained MoS2 with Sulfur Vacancies Using Scanning Electrochemical Microscopy JOURNAL OF THE AMERICAN CHEMICAL SOCIETY Li, H., Du, M., Mleczko, M. J., Koh, A. L., Nishi, Y., Pop, E., Bard, A. J., Zheng, X. 2016; 138 (15): 5123-5129

  Abstract

  Molybdenum disulfide (MoS2), with its active edge sites, is a proposed alternative to platinum for catalyzing the hydrogen evolution reaction (HER). Recently, the inert basal plane of MoS2 was successfully activated and optimized with excellent intrinsic HER activity by creating and further straining sulfur (S) vacancies. Nevertheless, little is known about the HER kinetics of those S vacancies and the additional effects from elastic tensile strain. Herein, scanning electrochemical microscopy was used to determine the HER kinetic data for both unstrained S vacancies (formal potential Ev0 = −0.53 VAg/AgCl, electron-transfer coefficient αv = 0.4, electron-transfer rate constant kv0 = 2.3 × 10(–4) cm/s) and strained S vacancies (Esv0= −0.53 VAg/AgCl, αsv = 0.4, ksv0 = 1.0 × 10(–3) cm/s) on the basal plane of MoS2 monolayers, and the strained S vacancy has an electron-transfer rate 4 times higher than that of the unstrained S vacancy. This study provides a general platform for measuring the kinetics of two-dimensional material-based catalysts.

  View details for DOI 10.1021/jacs.6b01377

  View details for PubMedID 26997198

• Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors ADVANCED MATERIALS Kumar, S., Graves, C. E., Strachan, J. P., Grafals, E. M., Kilcoyne, A. L., Tyliszczak, T., Weker, J. N., Nishi, Y., Williams, R. S. 2016; 28 (14): 2772-2776

  Abstract

  Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in operando X-ray absorption spectromicroscopy. This approach allows a physical description of the evolution of conduction channel and eventual device failure. The observed ring-like patterns of oxygen concentration are modeled using thermophoretic forces and Fick diffusion, establishing the critical role of temperature-driven oxygen migration.

  View details for DOI 10.1002/adma.201505435

  View details for Web of Science ID 000373839600013

  View details for PubMedID 26833926

• Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM IEEE ELECTRON DEVICE LETTERS Duncan, D., Magyari-Koepe, B., Nishi, Y. 2016; 37 (4): 400-403

  View details for DOI 10.1109/LED.2016.2524450

  View details for Web of Science ID 000373129300012

• Memristors: Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors (Adv. Mater. 14/2016). Advanced materials Kumar, S., Graves, C. E., Strachan, J. P., Grafals, E. M., Kilcoyne, A. L., Tyliszczak, T., Weker, J. N., Nishi, Y., Williams, R. S. 2016; 28 (14): 2771-?

  Abstract

  As information bits of 0's and 1's are stored in crosspoint tantalum oxide memristors, or resistive random access memory (RRAM) cells, nanoscale-resolution in operando X-ray transmission spectromicroscopy is used by J. P. Strachan and co-workers, as reported on page 2772, to directly observe oxygen migration and clustering, revealing an important operation and failure mechanism of RRAM, a frontrunner technology for next-generation computer memory.

  View details for DOI 10.1002/adma.201670096

  View details for PubMedID 27062166

• Increased photoluminescence from single-mode microwave annealing of N-type Ge-on-Si APPLIED PHYSICS LETTERS Lee, L. Y., Watanabe, Y., Nishi, Y. 2016; 108 (11)

  View details for DOI 10.1063/1.4944578

  View details for Web of Science ID 000373058400022

• The effects of uniaxial and biaxial strain on the electronic structure of germanium COMPUTATIONAL MATERIALS SCIENCE Sakata, K., Magyari-Kope, B., Gupta, S., Nishi, Y., Blom, A., Deak, P. 2016; 112: 263-268

  View details for DOI 10.1016/j.commatsci.2015.10.023

  View details for Web of Science ID 000366053000033

• Hydrogen doping in HfO2 resistance change random access memory APPLIED PHYSICS LETTERS Duncan, D., Magyari-Koepe, B., Nishi, Y. 2016; 108 (4)

  View details for DOI 10.1063/1.4940369

  View details for Web of Science ID 000375217200058

• HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations IEEE TRANSACTIONS ON ELECTRON DEVICES Traore, B., Blaise, P., Vianello, E., Perniola, L., de Salvo, B., Nishi, Y. 2016; 63 (1): 360-368

  View details for DOI 10.1109/TED.2015.2503145

  View details for Web of Science ID 000367259600047

• Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors SCIENTIFIC REPORTS Wang, C., Lee, W., Kong, D., Pfattner, R., Schweicher, G., Nakajima, R., Lu, C., Mei, J., Lee, T. H., Wu, H., Lopez, J., Diao, Y., Gu, X., Himmelberger, S., Niu, W., Matthews, J. R., He, M., Salleo, A., Nishi, Y., Bao, Z. 2015; 5

  Abstract

  Both high gain and transconductance at low operating voltages are essential for practical applications of organic field-effect transistors (OFETs). Here, we describe the significance of the double-layer capacitance effect in polar rubbery dielectrics, even when present in a very low ion concentration and conductivity. We observed that this effect can greatly enhance the OFET transconductance when driven at low voltages. Specifically, when the polar elastomer poly(vinylidene fluoride-co-hexafluoropropylene) (e-PVDF-HFP) was used as the dielectric layer, despite a thickness of several micrometers, we obtained a transconductance per channel width 30 times higher than that measured for the same organic semiconductors fabricated on a semicrystalline PVDF-HFP with a similar thickness. After a series of detailed experimental investigations, we attribute the above observation to the double-layer capacitance effect, even though the ionic conductivity is as low as 10(-10) S/cm. Different from previously reported OFETs with double-layer capacitance effects, our devices showed unprecedented high bias-stress stability in air and even in water.

  View details for DOI 10.1038/srep17849

  View details for PubMedID 26658331

• Measurements of Schottky barrier at the low-k SiOC:H/Cu interface using vacuum ultraviolet photoemission spectroscopy APPLIED PHYSICS LETTERS Guo, X., Pei, D., Zheng, H., King, S. W., Lin, Y., Fung, H., Chen, C., Nishi, Y., Shohet, J. L. 2015; 107 (23)

  View details for DOI 10.1063/1.4937582

  View details for Web of Science ID 000367010800043

• On the Origin of Low-Resistance State Retention Failure in HfO2-Based RRAM and Impact of Doping/Alloying IEEE TRANSACTIONS ON ELECTRON DEVICES Traore, B., Blaise, P., Vianello, E., Grampeix, H., Jeannot, S., Perniola, L., de Salvo, B., Nishi, Y. 2015; 62 (12): 4029-4036

  View details for DOI 10.1109/TED.2015.2490545

  View details for Web of Science ID 000365225700016

• Deep recombination centers in Cu2ZnSnSe4 revealed by screened-exchange hybrid density functional theory PHYSICAL REVIEW B Yee, Y. S., Magyari-Koepe, B., Nishi, Y., Bent, S. F., Clemens, B. M. 2015; 92 (19)

  View details for DOI 10.1103/PhysRevB.92.195201

  View details for Web of Science ID 000364016300003

• Characterization of electronic structure of periodically strained graphene APPLIED PHYSICS LETTERS Aslani, M., Garner, C. M., Kumar, S., Nordlund, D., Pianetta, P., Nishi, Y. 2015; 107 (18)

  View details for DOI 10.1063/1.4934701

  View details for Web of Science ID 000364580800063

• Fluorophore-based sensor for oxygen radicals in processing plasmas JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Choudhury, F. A., Sabat, G., Sussman, M. R., Nishi, Y., Shohet, J. L. 2015; 33 (6)

  View details for DOI 10.1116/1.4930315

  View details for Web of Science ID 000365503800022

• 3-D Resistive Memory Arrays: From Intrinsic Switching Behaviors to Optimization Guidelines IEEE TRANSACTIONS ON ELECTRON DEVICES Li, H., Gao, B., Chen, H. (., Chen, Z., Huang, P., Liu, R., Zhao, L., Jiang, Z. (., Liu, L., Liu, X., Yu, S., Kang, J., Nishi, Y., Wong, H. P. 2015; 62 (10): 3160-3167

  View details for DOI 10.1109/TED.2015.2468602

  View details for Web of Science ID 000361684000008

• Defect-induced bandgap narrowing in low-k dielectrics APPLIED PHYSICS LETTERS Guo, X., Zheng, H., King, S. W., Afanas'ev, V. V., Baklanov, M. R., deMarneffe, J., Nishi, Y., Shohet, J. L. 2015; 107 (8)

  View details for DOI 10.1063/1.4929702

  View details for Web of Science ID 000360593900053

• In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors JOURNAL OF APPLIED PHYSICS Kumar, S., Graves, C. E., Strachan, J. P., Kilcoyne, A. L., Tyliszczak, T., Nishi, Y., Williams, R. S. 2015; 118 (3)

  View details for DOI 10.1063/1.4926477

  View details for Web of Science ID 000358429200026

• Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations APPLIED PHYSICS LETTERS Zhao, L., Clima, S., Magyari-Kope, B., Jurczak, M., Nishi, Y. 2015; 107 (1)

  View details for DOI 10.1063/1.4926337

  View details for Web of Science ID 000357824200048

• Amorphorized tantalum-nickel binary films for metal gate applications APPLIED PHYSICS LETTERS Ouyang, J., Wongpiya, R., Deal, M. D., Clemens, B. M., Nishi, Y. 2015; 106 (15)

  View details for DOI 10.1063/1.4918375

  View details for Web of Science ID 000353160700016

• H-treatment impact on conductive-filament formation and stability in Ta2O5-based resistive-switching memory cells JOURNAL OF APPLIED PHYSICS Goux, L., Kim, J. Y., Magyari-Kope, B., Nishi, Y., REDOLFI, A., Jurczak, M. 2015; 117 (12)

  View details for DOI 10.1063/1.4915946

  View details for Web of Science ID 000352315700035

• Structural and electrical characterization of CoTiN metal gates JOURNAL OF APPLIED PHYSICS Wongpiya, R., Ouyang, J., Chung, C., Duong, D. T., Deal, M., Nishi, Y., Clemens, B. 2015; 117 (7)

  View details for DOI 10.1063/1.4908547

  View details for Web of Science ID 000351130900036

• Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress APPLIED PHYSICS LETTERS Guo, X., King, S. W., Zheng, H., Xue, P., Nishi, Y., Shohet, J. L. 2015; 106 (1)

  View details for DOI 10.1063/1.4905462

  View details for Web of Science ID 000347976900040

• Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy ADVANCED MATERIALS Kumar, S., Strachan, J. P., Pickett, M. D., Bratkovsky, A., Nishi, Y., Williams, R. S. 2014; 26 (44): 7505-7509

  Abstract

  The popular dual electronic and structural transitions in VO2 are explored using X-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the electronic transition always precedes the structural Peierls transition. Between the two transitions, there are intermediate states that are spectrally isolated here.

  View details for DOI 10.1002/adma.201402404

  View details for Web of Science ID 000345514600014

• Sequential electronic and structural transitions in VO2 observed using X-ray absorption spectromicroscopy. Advanced materials Kumar, S., Strachan, J. P., Pickett, M. D., Bratkovsky, A., Nishi, Y., Williams, R. S. 2014; 26 (44): 7505-7509

  Abstract

  The popular dual electronic and structural transitions in VO2 are explored using X-ray absorption spectromicroscopy with high spatial and spectral resolutions. It is found that during both heating and cooling, the electronic transition always precedes the structural Peierls transition. Between the two transitions, there are intermediate states that are spectrally isolated here.

  View details for DOI 10.1002/adma.201402404

  View details for PubMedID 25319233

• Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics APPLIED PHYSICS LETTERS Zheng, H., Ryan, E. T., Nishi, Y., Shohet, J. L. 2014; 105 (20)

  View details for DOI 10.1063/1.4901742

  View details for Web of Science ID 000345513300057

• First-principles study of A-site substitution in ferroelectric bismuth titanate JOURNAL OF MATERIALS SCIENCE Xue, K., Fonseca, L. R., Nishi, Y. 2014; 49 (18): 6363-6372

  View details for DOI 10.1007/s10853-014-8363-4

  View details for Web of Science ID 000338348000021

• Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Pei, D., Nichols, M. T., King, S. W., Clarke, J. S., Nishi, Y., Shohet, J. L. 2014; 32 (5)

  View details for DOI 10.1116/1.4891563

  View details for Web of Science ID 000342208400021

• Surface charge sensing by altering the phase transition in VO2 JOURNAL OF APPLIED PHYSICS Kumar, S., Esfandyarpour, R., Davis, R., Nishi, Y. 2014; 116 (7)

  View details for DOI 10.1063/1.4893577

  View details for Web of Science ID 000341189400062

• Effects of ZrO2 doping on HfO2 resistive switching memory characteristics APPLIED PHYSICS LETTERS Ryu, S. W., Cho, S., Park, J., Kwac, J., Kim, H. J., Nishi, Y. 2014; 105 (7)

  View details for DOI 10.1063/1.4893568

  View details for Web of Science ID 000341189800037

• Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass JOURNAL OF APPLIED PHYSICS Guo, X., Jakes, J. E., Banna, S., Nishi, Y., Shohet, J. L. 2014; 116 (4)

  View details for DOI 10.1063/1.4891501

  View details for Web of Science ID 000340710700067

• Role of nitrogen incorporation into Al2O3-based resistive random-access memory APPLIED PHYSICS EXPRESS Yang, M. Y., Kamiya, K., Shirakawa, H., Magyari-Koepe, B., Nishi, Y., Shiraishi, K. 2014; 7 (7)

  View details for DOI 10.7567/APEX.7.074202

  View details for Web of Science ID 000339930100024

• Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations NANOSCALE Zhao, L., Chen, H., Wu, S., Jiang, Z., Yu, S., Hou, T., Wong, H. P., Nishi, Y. 2014; 6 (11): 5698-5702

  Abstract

  Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

  View details for DOI 10.1039/c4nr00500g

  View details for Web of Science ID 000336883000022

  View details for PubMedID 24769626

• Electronic structure and stability of low symmetry Ta2O5 polymorphs PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS Kim, J., Magyari-Koepe, B., Lee, K., Kim, H., Lee, S., Nishi, Y. 2014; 8 (6): 560-565

  View details for DOI 10.1002/pssr.201409018

  View details for Web of Science ID 000338021200015

• A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory IEEE TRANSACTIONS ON ELECTRON DEVICES Xue, K., Traore, B., Blaise, P., Fonseca, L. R., Vianello, E., Molas, G., de Salvo, B., Ghibaudo, G., Magyari-Koepe, B., Nishi, Y. 2014; 61 (5): 1394-1402

  View details for DOI 10.1109/TED.2014.2312943

  View details for Web of Science ID 000337753300026

• Effect of water uptake on the fracture behavior of low-k organosilicate glass JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Guo, X., Jakes, J. E., Banna, S., Nishi, Y., Shohet, J. L. 2014; 32 (3)

  View details for Web of Science ID 000335965300027

• Impact of electrode nature on the filament formation and variability in HfO2 RRAM International Reliability Physics Symposium (IRPS) Traore, B., Blaise, P., Vianello, E., Jalaguier, E., Molas, G., Nodin, J. F., Perniola, L., De Salvo, B., Nishi, Y. IEEE. 2014

  View details for Web of Science ID 000343833200090

• Ab initio modeling of resistive switching mechanism in binary metal oxides IEEE International Symposium on Circuits and Systems (ISCAS) Magyari-Koepe, B., Zhao, L., Nishi, Y., Kamiya, K., Yang, M. Y., Shiraishi, K. IEEE. 2014: 2021–2024

  View details for Web of Science ID 000346488600507

• Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2. Advanced materials Kumar, S., Pickett, M. D., Strachan, J. P., Gibson, G., Nishi, Y., Williams, R. S. 2013; 25 (42): 6128-6132

  Abstract

  Joule-heating induced conductance-switching is studied in VO2 , a Mott insulator. Complementary in situ techniques including optical characterization, blackbody microscopy, scanning transmission X-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.

  View details for DOI 10.1002/adma.201302046

  View details for PubMedID 23868142

• Interface trap evaluation of Pd/Al2O3/GaN metal oxide semiconductor capacitors and the influence of near-interface hydrogen APPLIED PHYSICS LETTERS Long, R. D., Jackson, C. M., Yang, J., Hazeghi, A., Hitzman, C., Majety, S., Arehart, A. R., Nishi, Y., Ma, T. P., Ringel, S. A., McIntyre, P. C. 2013; 103 (20)

  View details for DOI 10.1063/1.4827102

  View details for Web of Science ID 000327818700027

• Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2 ADVANCED MATERIALS Kumar, S., Pickett, M. D., Strachan, J. P., Gibson, G., Nishi, Y., Williams, R. S. 2013; 25 (42): 6128-6132

  Abstract

  Joule-heating induced conductance-switching is studied in VO2 , a Mott insulator. Complementary in situ techniques including optical characterization, blackbody microscopy, scanning transmission X-ray microscopy (STXM) and numerical simulations are used. Abrupt redistribution in local temperature is shown to occur upon conductance-switching along with a structural phase transition, at the same current.

  View details for DOI 10.1002/adma.201302046

  View details for Web of Science ID 000327801900016

• Vacancy Cohesion-Isolation Phase Transition Upon Charge Injection and Removal in Binary Oxide-Based RRAM Filamentary-Type Switching IEEE TRANSACTIONS ON ELECTRON DEVICES Kamiya, K., Yang, M. Y., Magyari-Koepe, B., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 60 (10): 3400-3406

  View details for DOI 10.1109/TED.2013.2279397

  View details for Web of Science ID 000324928900059

• Charge-dependent oxygen vacancy diffusion in Al2O3-based resistive-random-access-memories APPLIED PHYSICS LETTERS Yang, M. Y., Kamiya, K., Magyari-Koepe, B., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 103 (9)

  View details for DOI 10.1063/1.4819772

  View details for Web of Science ID 000323846900064

• Essential role for ligand-dependent feedback antagonism of vertebrate hedgehog signaling by PTCH1, PTCH2 and HHIP1 during neural patterning DEVELOPMENT Holtz, A. M., Peterson, K. A., Nishi, Y., Morin, S., Song, J. Y., Charron, F., McMahon, A. P., Allen, B. L. 2013; 140 (16): 3423-3434

  Abstract

  Hedgehog (HH) signaling is essential for vertebrate and invertebrate embryogenesis. In Drosophila, feedback upregulation of the HH receptor Patched (PTC; PTCH in vertebrates), is required to restrict HH signaling during development. By contrast, PTCH1 upregulation is dispensable for early HH-dependent patterning in mice. Unique to vertebrates are two additional HH-binding antagonists that are induced by HH signaling, HHIP1 and the PTCH1 homologue PTCH2. Although HHIP1 functions semi-redundantly with PTCH1 to restrict HH signaling in the developing nervous system, a role for PTCH2 remains unresolved. Data presented here define a novel role for PTCH2 as a ciliary localized HH pathway antagonist. While PTCH2 is dispensable for normal ventral neural patterning, combined removal of PTCH2- and PTCH1-feedback antagonism produces a significant expansion of HH-dependent ventral neural progenitors. Strikingly, complete loss of PTCH2-, HHIP1- and PTCH1-feedback inhibition results in ectopic specification of ventral cell fates throughout the neural tube, reflecting constitutive HH pathway activation. Overall, these data reveal an essential role for ligand-dependent feedback inhibition of vertebrate HH signaling governed collectively by PTCH1, PTCH2 and HHIP1.

  View details for DOI 10.1242/dev.095083

  View details for Web of Science ID 000322442900013

  View details for PubMedID 23900540

• Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation JOURNAL OF APPLIED PHYSICS Zheng, H., Nichols, M. T., Pei, D., Nishi, Y., Shohet, J. L. 2013; 114 (6)

  View details for DOI 10.1063/1.4817427

  View details for Web of Science ID 000323177100060

• Amorphous thin film TaWSiC as a diffusion barrier for copper interconnects APPLIED PHYSICS LETTERS Wongpiya, R., Ouyang, J., Kim, T. R., Deal, M., Sinclair, R., Nishi, Y., Clemens, B. 2013; 103 (2)

  View details for DOI 10.1063/1.4813396

  View details for Web of Science ID 000321761000036

• First principles modeling of charged oxygen vacancy filaments in reduced TiO2-implications to the operation of non-volatile memory devices MATHEMATICAL AND COMPUTER MODELLING Zhao, L., Park, S., Magyari-Koepe, B., Nishi, Y. 2013; 58 (1-2): 275-281

  View details for DOI 10.1016/j.mcm.2012.11.009

  View details for Web of Science ID 000320601000028

• Grain boundary composition and conduction in HfO2: An ab initio study APPLIED PHYSICS LETTERS Xue, K., Blaise, P., Fonseca, L. R., Molas, G., Vianello, E., Traore, B., De Salvo, B., Ghibaudo, G., Nishi, Y. 2013; 102 (20)

  View details for DOI 10.1063/1.4807666

  View details for Web of Science ID 000320619300040

• p-Channel Field-Effect Transistors Based on C-60 Doped with Molybdenum Trioxide ACS APPLIED MATERIALS & INTERFACES Lee, T. H., Luessem, B., Kim, K., Giri, G., Nishi, Y., Bao, Z. 2013; 5 (7): 2337-2341

  Abstract

  Fullerene (C60) is a well-known n-channel organic semiconductor. We demonstrate that p-channel C60 field-effect transistors are possible by doping with molybdenum trioxide (MoO3). The device performance of the p-channel C60 field-effect transistors, such as mobility, threshold voltage, and on/off ratio is varied in a controlled manner by changing doping concentration. This work demonstrates the utility of charge transfer doping to obtain both n- and p-channel field-effect transistors with a single organic semiconductor.

  View details for DOI 10.1021/am3026568

  View details for Web of Science ID 000317549100007

  View details for PubMedID 23446111

• Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories PHYSICAL REVIEW B Kamiya, K., Yang, M. Y., Nagata, T., Park, S., Magyari-Koepe, B., Chikyow, T., Yamada, K., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 87 (15)

  View details for DOI 10.1103/PhysRevB.87.155201

  View details for Web of Science ID 000317195000002

• Physical Guiding Principles for High Quality Resistive Random Access Memory Stack with Al2O3 Insertion Layer JAPANESE JOURNAL OF APPLIED PHYSICS Yang, M. Y., Kamiya, K., Magyari-Koepe, B., Momida, H., Ohno, T., Niwa, M., Nishi, Y., Shiraishi, K. 2013; 52 (4)

  View details for DOI 10.7567/JJAP.52.04CD11

  View details for Web of Science ID 000320002400059

• Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory APPLIED PHYSICS LETTERS Zhao, L., Park, S., Magyari-Koepe, B., Nishi, Y. 2013; 102 (8)

  View details for DOI 10.1063/1.4794083

  View details for Web of Science ID 000315597000081

• Achieving direct band gap in germanium through integration of Sn alloying and external strain JOURNAL OF APPLIED PHYSICS Gupta, S., Magyari-Koepe, B., Nishi, Y., Saraswat, K. C. 2013; 113 (7)

  View details for DOI 10.1063/1.4792649

  View details for Web of Science ID 000315262800027

• Prediction of Semimetallic Tetragonal Hf2O3 and Zr2O3 from First Principles PHYSICAL REVIEW LETTERS Xue, K., Blaise, P., Fonseca, L. R., Nishi, Y. 2013; 110 (6)

  Abstract

  Tetragonal semimetallic phases are predicted for Hf(2)O(3) and Zr(2)O(3) using density functional theory. The structures belong to space group P4[over ¯]m2 and are more stable than their corundum counterparts. Many body corrections at first order confirm their semimetallic character. The carrier concentrations are very similar for both materials, and are estimated as 1.8×10(21) cm(-3) for both electrons and holes, allowing for electric conduction. This could serve as a basic explanation for the low resistance state of hafnia-based resistive random access memory.

  View details for DOI 10.1103/PhysRevLett.110.065502

  View details for Web of Science ID 000314687300023

  View details for PubMedID 23432270

• Theoretical Design of Desirable Stack Structure for Resistive Random Access Memories Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 11 held during the 224th Meeting of the Electrochemical-Society Kamiya, K., YANG, M. Y., Magyari-Koepe, B., Niwa, M., Nishi, Y., Shiraishi, K. ELECTROCHEMICAL SOC INC. 2013: 181–88

  View details for DOI 10.1149/05807.0181ecst

  View details for Web of Science ID 000328065400022

• Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling IEEE International Reliability Physics Symposium (IRPS) Traore, B., Xue, K., Vianello, E., Molas, G., Blaise, P., De Salvo, B., Padovani, A., Pirrotta, O., Larcher, L., Fonseca, L. R., Nishi, Y. IEEE. 2013

  View details for Web of Science ID 000325097500101

• Effect of Composition on Structural and Electrical Properties of Amorphous Ta-W-Si-C Metal Thin Films ECS SOLID STATE LETTERS Ouyang, J., Wongpiya, R., Grubbs, M. E., Deal, M. D., Clemens, B. M., Nishi, Y. 2013; 2 (10): P86-P88

  View details for DOI 10.1149/2.003310ssl

  View details for Web of Science ID 000322995700003

• Design and Optimization Methodology for 3D RRAM Arrays IEEE International Electron Devices Meeting (IEDM) Deng, Y., Chen, H., Gao, B., Yu, S., Wu, S., Zhao, L., Chen, B., Jiang, Z., Liu, X., Hou, T., Nishi, Y., Kang, J., Wong, H. P. IEEE. 2013

  View details for Web of Science ID 000346509500156

• Physical Origins of ON-OFF Switching in ReRAM via V-O Based Conducting Channels 31st International Conference on the Physics of Semiconductors (ICPS) Kamiya, K., Yang, M. Y., Park, S., Magyari-Koepe, B., Nishi, Y., Niwa, M., Shiraishi, K. AMER INST PHYSICS. 2013: 11–12

  View details for DOI 10.1063/1.4848260

  View details for Web of Science ID 000331793000005

• Nanoscale (similar to 10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode IEEE International Electron Devices Meeting (IEDM) Cha, E., Woo, J., Lee, D., Lee, S., Song, J., Koo, Y., Lee, J. H., Park, C. G., Yang, M. Y., Kamiya, K., Shiraishi, K., Magyari-Koepe, B., Nishi, Y., Hwang, H. IEEE. 2013

  View details for Web of Science ID 000346509500065

• First-Principles Study of Oxygen Vacancy and Hydrogen Impurity Effects in the Pseudo-hexagonal Ta2O5 2nd Symposium on Nonvolatile Memories held at the 224th Meeting of the Electrochemical-Society Kim, J. Y., Magyari-Koepe, B., Hazeghi, A., Lee, K. J., Kim, H. S., Lee, S. H., Nishi, Y. ELECTROCHEMICAL SOC INC. 2013: 41–44

  View details for DOI 10.1149/05805.0041ecst

  View details for Web of Science ID 000329646100006

• Neural-specific Sox2 input and differential Gli-binding affinity provide context and positional information in Shh-directed neural patterning GENES & DEVELOPMENT Peterson, K. A., Nishi, Y., Ma, W., Vedenko, A., Shokri, L., Zhang, X., McFarlane, M., Baizabal, J., Junker, J. P., van Oudenaarden, A., Mikkelsen, T., Bernstein, B. E., Bailey, T. L., Bulyk, M. L., Wong, W. H., McMahon, A. P. 2012; 26 (24): 2802-2816

  Abstract

  In the vertebrate neural tube, regional Sonic hedgehog (Shh) signaling invokes a time- and concentration-dependent induction of six different cell populations mediated through Gli transcriptional regulators. Elsewhere in the embryo, Shh/Gli responses invoke different tissue-appropriate regulatory programs. A genome-scale analysis of DNA binding by Gli1 and Sox2, a pan-neural determinant, identified a set of shared regulatory regions associated with key factors central to cell fate determination and neural tube patterning. Functional analysis in transgenic mice validates core enhancers for each of these factors and demonstrates the dual requirement for Gli1 and Sox2 inputs for neural enhancer activity. Furthermore, through an unbiased determination of Gli-binding site preferences and analysis of binding site variants in the developing mammalian CNS, we demonstrate that differential Gli-binding affinity underlies threshold-level activator responses to Shh input. In summary, our results highlight Sox2 input as a context-specific determinant of the neural-specific Shh response and differential Gli-binding site affinity as an important cis-regulatory property critical for interpreting Shh morphogen action in the mammalian neural tube.

  View details for DOI 10.1101/gad.207142.112

  View details for Web of Science ID 000312775700012

  View details for PubMedID 23249739

  View details for PubMedCentralID PMC3533082

• Temperature-dependent capacitance-voltage analysis of defects in Al2O3 gate dielectric stacks on GaN APPLIED PHYSICS LETTERS Long, R. D., Hazeghi, A., Gunji, M., Nishi, Y., McIntyre, P. C. 2012; 101 (24)

  View details for DOI 10.1063/1.4769827

  View details for Web of Science ID 000312490000025

• The effects of vacuum ultraviolet radiation on low-k dielectric films JOURNAL OF APPLIED PHYSICS Sinha, H., Ren, H., Nichols, M. T., Lauer, J. L., Tomoyasu, M., Russell, N. M., Jiang, G., Antonelli, G. A., Fuller, N. C., Engelmann, S. U., Lin, Q., Ryan, V., Nishi, Y., Shohet, J. L. 2012; 112 (11)

  View details for DOI 10.1063/1.4751317

  View details for Web of Science ID 000312490700001

• First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides JOURNAL OF MATERIALS SCIENCE Magyari-Koepe, B., Park, S. G., Lee, H., Nishi, Y. 2012; 47 (21): 7498-7514

  View details for DOI 10.1007/s10853-012-6638-1

  View details for Web of Science ID 000307520900013

• Theory and Experiments of the Impact of Work-Function Variability on Threshold Voltage Variability in MOS Devices IEEE TRANSACTIONS ON ELECTRON DEVICES Zhang, X., Mitard, J., Ragnarsson, L., Hoffmann, T., Deal, M., Grubbs, M. E., Li, J., Magyari-Kope, B., Clemens, B. M., Nishi, Y. 2012; 59 (11): 3124-3126

  View details for DOI 10.1109/TED.2012.2212021

  View details for Web of Science ID 000310385100039

• Tuning the Built-in Electric Field in Ferroelectric Pb(Zr0.2Ti0.8)O-3 Films for Long-Term Stability of Single-Digit Nanometer Inverted Domains NANO LETTERS Tayebi, N., Kim, S., Chen, R. J., Quan Tran, Q., Franklin, N., Nishi, Y., Ma, Q., Rao, V. 2012; 12 (11): 5455-5463

  Abstract

  The emergence of new technologies, such as whole genome sequencing systems, which generate a large amount of data, is requiring ultrahigh storage capacities. Due to their compactness and low power consumption, probe-based memory devices using Pb(Zr(0.2)Ti(0.8))O(3) (PZT) ferroelectric films are the ideal candidate for such applications where portability is desired. To achieve ultrahigh (>1 Tbit/in(2)) storage densities, sub-10 nm inverted domains are required. However, such domains remain unstable and can invert back to their original polarization due to the effects of an antiparallel built-in electric field in the PZT film, domain-wall, and depolarization energies. Here, we show that the built-in electric-field can be tuned and suppressed by repetitive hydrogen and oxygen plasma treatments. Such treatments trigger reversible Pb reduction/oxidation activity, which alters the electrochemistry of the Pb overlayer and compensates for charges induced by the Pb vacancies. This tuning mechanism is used to demonstrate the writing of stable and equal size sub-4 nm domains in both up- and down-polarized PZT films, corresponding to eight inverted unit-cells. The bit sizes recorded here are the smallest ever achieved, which correspond to potential 60 Tbit/in(2) data storage densities.

  View details for DOI 10.1021/nl302911k

  View details for Web of Science ID 000311244400003

  View details for PubMedID 23043427

• Hard HfB2 tip-coatings for ultrahigh density probe-based storage APPLIED PHYSICS LETTERS Tayebi, N., Yanguas-Gil, A., Kumar, N., Zhang, Y., Abelson, J. R., Nishi, Y., Ma, Q., Rao, V. R. 2012; 101 (9)

  View details for DOI 10.1063/1.4748983

  View details for Web of Science ID 000308408100026

• Engineering the metal gate electrode for controlling the threshold voltage of organic transistors APPLIED PHYSICS LETTERS Chung, Y., Johnson, O., Deal, M., Nishi, Y., Murmann, B., Bao, Z. 2012; 101 (6)

  View details for DOI 10.1063/1.4739511

  View details for Web of Science ID 000307862400089

• Charging response of back-end-of-the-line barrier dielectrics to VUV radiation THIN SOLID FILMS Sinha, H., Lauer, J. L., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2012; 520 (16): 5300-5303

  View details for DOI 10.1016/j.tsf.2012.04.014

  View details for Web of Science ID 000305719000035

• Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser APPLIED PHYSICS LETTERS Nam, D., Sukhdeo, D., Cheng, S., Roy, A., Huang, K. C., Brongersma, M., Nishi, Y., Saraswat, K. 2012; 100 (13)

  View details for DOI 10.1063/1.3699224

  View details for Web of Science ID 000302230800012

• Ti-electrode effects of NiO based resistive switching memory with Ni insertion layer APPLIED PHYSICS LETTERS Ryu, S. W., Ahn, Y. B., Kim, H. J., Nishi, Y. 2012; 100 (13)

  View details for DOI 10.1063/1.3697691

  View details for Web of Science ID 000302230800079

• Time-dependent dielectric breakdown of plasma-exposed porous organosilicate glass APPLIED PHYSICS LETTERS Nichols, M. T., Sinha, H., Wiltbank, C. A., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2012; 100 (11)

  View details for DOI 10.1063/1.3693526

  View details for Web of Science ID 000302204900059

• ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels APPLIED PHYSICS LETTERS Kamiya, K., Yang, M. Y., Park, S., Magyari-Koepe, B., Nishi, Y., Niwa, M., Shiraishi, K. 2012; 100 (7)

  View details for DOI 10.1063/1.3685222

  View details for Web of Science ID 000300436800077

• Towards High Mobility GeSn Channel nMOSFETs: Improved Surface Passivation Using Novel Ozone Oxidation Method IEEE International Electron Devices Meeting (IEDM) Gupta, S., Vincent, B., Yang, B., LIN, D., Gencarelli, F., Lin, J. J., Chen, R., Richard, O., Bender, H., Magyari-Koepe, B., Caymax, M., Dekoster, J., Nishi, Y., Saraswat, K. C. IEEE. 2012

  View details for Web of Science ID 000320615600095

• Asymmetry, Vacancy Engineering and Mechanism for Bipolar RRAM 4th IEEE International Memory Workshop (IMW) Gilmer, D. C., Bersuker, G., Koveshnikov, S., Jo, M., Kalantarian, A., Butcher, B., Geer, R., Nishi, Y., Kirsch, P. D., Jammy, R. IEEE. 2012

  View details for Web of Science ID 000332985300028

• GeSn Channel n and p MOSFETs 5th SiGe, Ge, and Related Compounds - Materials, Processing and Devices Symposium held at the 220th Meeting of the Electrochemical-Society (ECS) Gupta, S., Chen, R., Vincent, B., Lin, D., Magyari-Koepe, B., Caymax, M., Dekoster, J., Harris, J. S., Nishi, Y., Saraswat, K. C. ELECTROCHEMICAL SOC INC. 2012: 937–41

  View details for DOI 10.1149/05009.0937ecst

  View details for Web of Science ID 000338015300111

• Computational Study toward Micro Electronics Engineering 28th International Conference on Microelectronics (MIEL) Shiraishi, K., Yamaguchi, K., Yang, M., PARK, S. G., Kamiya, K., Shigeta, Y., Magyari-Kope, B., Niwa, M., Nishi, Y. IEEE. 2012: 65–70

  View details for Web of Science ID 000309119600010

• Physics in Designing Desirable ReRAM Stack Structure-Atomistic Recipes Based on Oxygen Chemical Potential Control and Charge Injection/Removal IEEE International Electron Devices Meeting (IEDM) Kamiya, K., YANG, M. Y., Magyari-Koepe, B., Niwa, M., Nishi, Y., Shiraishi, K. IEEE. 2012

  View details for Web of Science ID 000320615600121

• The effects of plasma exposure on low-k dielectric materials Advanced Etch Technology for Nanopatterning Conference (AETNC)/SPIE Advanced Lithography Symposium Shohet, J. L., Ren, H., Nichols, M. T., Sinha, H., Lu, W., Mavrakakis, K., Lin, Q., Russell, N. M., Tomoyasu, M., Antonelli, G. A., Engelmann, S. U., Fuller, N. C., Ryan, V., Nishi, Y. SPIE-INT SOC OPTICAL ENGINEERING. 2012

  View details for DOI 10.1117/12.917967

  View details for Web of Science ID 000304817200011

• Germanium on Insulator (GOI) Structure Using Hetero-Epitaxial Lateral Overgrowth on Silicon 4th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications held at the 221st Meeting of the Electrochemical-Society (ECS) as Symposium E2 Nam, J. H., Fuse, T., Nishi, Y., Saraswat, K. C. ELECTROCHEMICAL SOC INC. 2012: 203–8

  View details for DOI 10.1149/1.3700469

  View details for Web of Science ID 000316890000023

• Plasma and vacuum ultraviolet induced charging of SiO2 and HfO2 patterned structures JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Lauer, J. L., Upadhyaya, G. S., Sinha, H., KRUGER, J. B., Nishi, Y., Shohet, J. L. 2012; 30 (1)

  View details for DOI 10.1116/1.3654012

  View details for Web of Science ID 000298992800009

• Hot forming to improve memory window and uniformity of low-power HfOx-based RRAMs 4th IEEE International Memory Workshop (IMW) Butcher, B., Bersuker, G., Young-Fisher, K. G., Gilmer, D. C., Kalantarian, A., Nishi, Y., Geer, R., Kirsch, P. D., Jammy, R. IEEE. 2012

  View details for Web of Science ID 000332985300026

• Design and Materials Selection for Low Power Laterally Actuating Nanoelectromechanical Relays IEEE International SOI Conference Yoo, K., Lee, D., Tiberio, R., Conway, J., Wong, H. P., Nishi, Y. IEEE. 2012

  View details for Web of Science ID 000315378300051

• First Principles Guiding Principles for the Switching Process in Oxide ReRAM IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Shiraishil, K., YANG, M. Y., Kamiya, K., Magyari-Koepe, B., Niwa, M., Nishi, Y. IEEE. 2012: 489–492

  View details for Web of Science ID 000319824700137

• Highly-Strained Germanium as a Gain Medium for Silicon-Compatible Lasers Conference on Lasers and Electro-Optics (CLEO) Sukhdeo, D., Nam, D., Cheng, S., Yuan, Z., Roy, A., Huang, K. C., Brongersma, M., Nishi, Y., Saraswat, K. IEEE. 2012

  View details for Web of Science ID 000310362401035

• Strained germanium thin film membrane on silicon substrate for optoelectronics OPTICS EXPRESS Nam, D., Sukhdeo, D., Roy, A., Balram, K., Cheng, S., Huang, K. C., Yuan, Z., Brongersma, M., Nishi, Y., Miller, D., Saraswat, K. 2011; 19 (27): 25866-25872

  Abstract

  This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.

  View details for PubMedID 22274174

• Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb pMOSFET IEEE TRANSACTIONS ON ELECTRON DEVICES Nainani, A., Irisawa, T., Yuan, Z., Bennett, B. R., Boos, J. B., Nishi, Y., Saraswat, K. C. 2011; 58 (10): 3407-3415

  View details for DOI 10.1109/TED.2011.2162732

  View details for Web of Science ID 000295100300024

• High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for n(+)/p Junction Diode IEEE ELECTRON DEVICE LETTERS Thareja, G., Chopra, S., Adams, B., Kim, Y., Moffatt, S., Saraswat, K., Nishi, Y. 2011; 32 (7): 838-840

  View details for DOI 10.1109/LED.2011.2142410

  View details for Web of Science ID 000292165200002

• InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design JOURNAL OF APPLIED PHYSICS Nainani, A., Yuan, Z., Krishnamohan, T., Bennett, B. R., Boos, J. B., Reason, M., Ancona, M. G., Nishi, Y., Saraswat, K. C. 2011; 110 (1)

  View details for DOI 10.1063/1.3600220

  View details for Web of Science ID 000292776500124

• Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3 NANOTECHNOLOGY Magyari-Koepe, B., Tendulkar, M., Park, S., Lee, H. D., Nishi, Y. 2011; 22 (25)

  Abstract

  Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

  View details for DOI 10.1088/0957-4484/22/25/254029

  View details for Web of Science ID 000290619900030

  View details for PubMedID 21572196

• The nature of the defects generated from plasma exposure in pristine and ultraviolet-cured low-k organosilicate glass APPLIED PHYSICS LETTERS Ren, H., Jiang, G., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2011; 98 (25)

  View details for DOI 10.1063/1.3601922

  View details for Web of Science ID 000292039900048

• Effect of the dielectric-substrate interface on charge accumulation from vacuum ultraviolet irradiation of low-k porous organosilicate dielectrics THIN SOLID FILMS Sinha, H., SEHGAL, A., Ren, H., Nichols, M. T., Tomoyasu, M., Russell, N. M., Nishi, Y., Shohet, J. L. 2011; 519 (16): 5464-5466

  View details for DOI 10.1016/j.tsf.2011.03.010

  View details for Web of Science ID 000292573500027

• Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon APPLIED PHYSICS LETTERS Cheng, S., Shambat, G., Lu, J., Yu, H., Saraswat, K., Kamins, T. I., Vuckovic, J., Nishi, Y. 2011; 98 (21)

  View details for DOI 10.1063/1.3592837

  View details for Web of Science ID 000291041600001

• Dielectric relaxation study of hydrogen exposure as a source of two-level systems in Al2O3 JOURNAL OF NON-CRYSTALLINE SOLIDS Jameson, J. R., Ngo, D., Benko, C., McVittie, J. P., Nishi, Y., Young, B. A. 2011; 357 (10): 2148-2151

  View details for DOI 10.1016/j.jnoncrysol.2011.02.054

  View details for Web of Science ID 000291172500022

• Electrical Characteristics of Germanium n(+)/p Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb IEEE ELECTRON DEVICE LETTERS Thareja, G., Cheng, S., Kamins, T., Saraswat, K., Nishi, Y. 2011; 32 (5): 608-610

  View details for DOI 10.1109/LED.2011.2119460

  View details for Web of Science ID 000289908500010

• Effects of vacuum ultraviolet radiation on deposited and ultraviolet-cured low-k porous organosilicate glass JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Sinha, H., Antonelli, G. A., Jiang, G., Nishi, Y., Shohet, J. L. 2011; 29 (3)

  View details for DOI 10.1116/1.3570818

  View details for Web of Science ID 000289689000002

• Novel Germanium n-MOSFETs With Raised Source/Drain on Selectively Grown Ge on Si for Monolithic Integration IEEE ELECTRON DEVICE LETTERS Yu, H., Kobayashi, M., Park, J., Nishi, Y., Saraswat, K. C. 2011; 32 (4): 446-448

  View details for DOI 10.1109/LED.2011.2106756

  View details for Web of Science ID 000288664800006

• Defects in low-k organosilicate glass and their response to processing as measured with electron-spin resonance APPLIED PHYSICS LETTERS Ren, H., Nichols, M. T., Jiang, G., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2011; 98 (10)

  View details for DOI 10.1063/1.3562307

  View details for Web of Science ID 000288277200057

• Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors NANO LETTERS Chung, Y., Verploegen, E., Vailionis, A., Sun, Y., Nishi, Y., Murmann, B., Bao, Z. 2011; 11 (3): 1161-1165

  Abstract

  We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.

  View details for DOI 10.1021/nl104087u

  View details for Web of Science ID 000288061500043

  View details for PubMedID 21323381

• Challenges and opportunities for future non-volatile memory technology CURRENT APPLIED PHYSICS Nishi, Y. 2011; 11 (2): E101-E103

  View details for DOI 10.1016/j.cap.2011.01.022

  View details for Web of Science ID 000294208600023

• Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in TiO2 for Resistive Switching Memory IEEE ELECTRON DEVICE LETTERS Park, S., Magyari-Koepe, B., Nishi, Y. 2011; 32 (2): 197-199

  View details for DOI 10.1109/LED.2010.2091489

  View details for Web of Science ID 000286677700029

• On the High-Field Transport and Uniaxial Stress Effect in Ge PFETs IEEE TRANSACTIONS ON ELECTRON DEVICES Kobayashi, M., Mitard, J., Irisawa, T., Hoffmann, T., Meuris, M., Saraswat, K., Nishi, Y., Heyns, M. 2011; 58 (2): 384-391

  View details for DOI 10.1109/TED.2010.2093530

  View details for Web of Science ID 000286515400014

• GeSn Technology: Extending the Ge Electronics Roadmap IEEE International Electron Devices Meeting (IEDM) Gupta, S., Chen, R., Magyari-Kope, B., Lin, H., Yang, B., Nainani, A., Nishi, Y., Harris, J. S., Saraswat, K. C. IEEE. 2011

  View details for Web of Science ID 000300015300100

• High Endurance Performance of 1T1R HfO(x)based RRAM at Low (< 20uA) Operative Current and Elevated (150 degrees C) Temperature IEEE International Integrated Reliability Workshop Final Report (IIRW) Butcher, B., Koveshnikov, S., Gilmer, D. C., Bersuker, G., Sung, M. G., Kalantarian, A., PARK, C., Geer, R., Nishi, Y., Kirsch, P. D., Jammy, R. IEEE. 2011: 146–150

  View details for Web of Science ID 000300607100037

• Effect of vacuum ultraviolet and ultraviolet irradiation on mobile charges in the bandgap of low-k-porous organosilicate dielectrics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Sinha, H., Nichols, M. T., SEHGAL, A., Tomoyasu, M., Russell, N. M., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2011; 29 (1)

  View details for DOI 10.1116/1.3520433

  View details for Web of Science ID 000286648300001

• Changes to Charge and Defects in Dielectrics from Ion and Photon Fluences during Plasma Exposure ELECTROCHEMICAL AND SOLID STATE LETTERS Ren, H., Nishi, Y., Shohet, J. L. 2011; 14 (3): H107-H109

  View details for DOI 10.1149/1.3524403

  View details for Web of Science ID 000285974100011

• Role of Hydrogen Ions in TiO2-Based Memory Devices INTEGRATED FERROELECTRICS Jameson, J. R., Nishi, Y. 2011; 124: 112-118

  View details for DOI 10.1080/10584587.2011.573733

  View details for Web of Science ID 000297007500016

• Quasi Passive Optical Switch Based on Transition Metal Oxide Device Conference on Lasers and Electro-Optics (CLEO) Yen, S., Takashima, Y., Tendulkar, M., Jameson, J. R., Nishi, Y., Kazovsky, L. G. IEEE. 2011

  View details for Web of Science ID 000295612402130

• Damage to low-k porous organosilicate glass from vacuum-ultraviolet irradiation Conference on Damage to VUV, EUV, and X-ray Optics III Shohet, J. L., Sinha, H., Ren, H., Nichols, M. T., Nishi, Y., Tomoyasu, M., Russell, N. M. SPIE-INT SOC OPTICAL ENGINEERING. 2011

  View details for DOI 10.1117/12.887691

  View details for Web of Science ID 000293212000018

• Understanding the Switching Mechanism in RRAM Devices and the Dielectric Breakdown of Ultrathin High-k Gate Stacks from First Principles Calculations 3rd International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs TFT) Magyari-Koepe, B., Park, S., Lee, H. D., Nishi, Y. ELECTROCHEMICAL SOC INC. 2011: 167–78

  View details for DOI 10.1149/1.3600737

  View details for Web of Science ID 000305898900019

• Direct band Ge photoluminescence at 1.6 mu m coupled to Ge-on-Si microdisk resonators Conference on Lasers and Electro-Optics (CLEO) Shambat, G., Cheng, S., Lu, J., Nishi, Y., Vuckovic, J. IEEE. 2011

  View details for Web of Science ID 000295612401163

• Reduction in reset current of unipolar NiO-based resistive switching through nickel interfacial layer APPLIED PHYSICS LETTERS Lee, H. D., Nishi, Y. 2010; 97 (25)

  View details for DOI 10.1063/1.3528211

  View details for Web of Science ID 000285764300040

• Direct band Ge photoluminescence near 1.6 mu m coupled to Ge-on-Si microdisk resonators APPLIED PHYSICS LETTERS Shambat, G., Cheng, S., Lu, J., Nishi, Y., Vuckovic, J. 2010; 97 (24)

  View details for DOI 10.1063/1.3526732

  View details for Web of Science ID 000285481000002

• Development and characterization of high temperature stable Ta-W-Si-C amorphous metal gates APPLIED PHYSICS LETTERS Grubbs, M. E., Zhang, X., Deal, M., Nishi, Y., Clemens, B. M. 2010; 97 (22)

  View details for DOI 10.1063/1.3508952

  View details for Web of Science ID 000284965000087

• Reflectance and substrate currents of dielectric layers under vacuum ultraviolet irradiation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A Sinha, H., Straight, D. B., Lauer, J. L., Fuller, N. C., Engelmann, S. U., Zhang, Y., Antonelli, G. A., Severson, M., Nishi, Y., Shohet, J. L. 2010; 28 (6): 1316-1318

  View details for DOI 10.1116/1.3488594

  View details for Web of Science ID 000283745300008

• Plasma damage effects on low-k porous organosilicate glass JOURNAL OF APPLIED PHYSICS Ren, H., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 108 (9)

  View details for DOI 10.1063/1.3506523

  View details for Web of Science ID 000284270900111

• An Ultraclean Tip-Wear Reduction Scheme for Ultrahigh Density Scanning Probe-Based Data Storage ACS NANO Tayebi, N., Zhang, Y., Chen, R. J., Tran, Q., Chen, R., Nishi, Y., Ma, Q., Rao, V. 2010; 4 (10): 5713-5720

  Abstract

  Probe-based memory devices using ferroelectric media have the potential to achieve ultrahigh data-storage densities under high write-read speeds. However, the high-speed scanning operations over a device lifetime of 5-10 years, which corresponds to a probe tip sliding distance of 5-10 km, can cause the probe tip to mechanically wear, critically affecting its write-read resolution. Here, we show that the long distance tip-wear endurance issue can be resolved by introducing a thin water layer at the tip-media interface-thin enough to form a liquid crystal. By modulating the force at the tip-surface contact, this water crystal layer can act as a viscoelastic material which reduces the stress level on atomic bonds taking part in the wear process. Under our optimized environment, a platinum-iridium probe tip can retain its write-read resolution over 5 km of sliding at a 5 mm/s velocity on a smooth ferroelectric film. We also demonstrate a 3.6 Tbit/inch(2) storage density over a 1 × 1 μm(2) area, which is the highest density ever written on ferroelectric films over such a large area.

  View details for DOI 10.1021/nn1013512

  View details for Web of Science ID 000283453700032

  View details for PubMedID 20929239

• Electronic correlation effects in reduced rutile TiO2 within the LDA+U method PHYSICAL REVIEW B Park, S., Magyari-Koepe, B., Nishi, Y. 2010; 82 (11)

  View details for DOI 10.1103/PhysRevB.82.115109

  View details for Web of Science ID 000281658400003

• Bilayer metal gate electrodes with tunable work function: Adhesion and interface characterization JOURNAL OF APPLIED PHYSICS Birringer, R. P., Lu, C., Deal, M., Nishi, Y., Dauskardt, R. H. 2010; 108 (5)

  View details for DOI 10.1063/1.3466957

  View details for Web of Science ID 000282478900037

• Surface potential due to charge accumulation during vacuum ultraviolet exposure for high-k and low-k dielectrics APPLIED PHYSICS LETTERS Ren, H., Sinha, H., SEHGAL, A., Nichols, M. T., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 97 (7)

  View details for DOI 10.1063/1.3481079

  View details for Web of Science ID 000281153600060

• High quality single-crystal germanium-on-insulator on bulk Si substrates based on multistep lateral over-growth with hydrogen annealing APPLIED PHYSICS LETTERS Yu, H., Cheng, S., Park, J., Okyay, A. K., Onbasli, M. C., Ercan, B., Nishi, Y., Saraswat, K. C. 2010; 97 (6)

  View details for DOI 10.1063/1.3478242

  View details for Web of Science ID 000280940900089

• Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface PHYSICAL REVIEW B Liu, Z., Kobayashi, M., Paul, B. C., Bao, Z., Nishi, Y. 2010; 82 (3)

  View details for DOI 10.1103/PhysRevB.82.035311

  View details for Web of Science ID 000280123900004

• Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals PHYSICAL REVIEW B Gong, Y., Ishikawa, S., Cheng, S., Gunji, M., Nishi, Y., Vuckovic, J. 2010; 81 (23)

  View details for DOI 10.1103/PhysRevB.81.235317

  View details for Web of Science ID 000278724600001

• Model of metallic filament formation and rupture in NiO for unipolar switching PHYSICAL REVIEW B Lee, H. D., Magyari-Kope, B., Nishi, Y. 2010; 81 (19)

  View details for DOI 10.1103/PhysRevB.81.193202

  View details for Web of Science ID 000278142000006

• Effects of vacuum ultraviolet and ultraviolet irradiation on ultrathin hafnium-oxide dielectric layers on (100)Si as measured with electron-spin resonance APPLIED PHYSICS LETTERS Ren, H., Cheng, S. L., Nishi, Y., Shohet, J. L. 2010; 96 (19)

  View details for DOI 10.1063/1.3430570

  View details for Web of Science ID 000277756400053

• Synthesis of TiO2 nanoframe and the prototype of a nanoframe solar cell NANOTECHNOLOGY Chen, Y., Kim, H., McVittie, J., Ting, C., Nishi, Y. 2010; 21 (18)

  Abstract

  Nanoframes containing 20 nm diameter TiO(2) nanowire arrays were synthesized with polymer templates via cathodic sol-gel deposition followed by 450 degrees C sintering. Raman spectra indicated that they are composed of pure anatase TiO(2). The nanowire array inside the nanoframe was confirmed to be single crystalline by high resolution TEM. Dye-sensitized solar cells based on this nanoframe were fabricated and the effects of the top cover in the nanoframe, which is the only difference between nanoframe cells and nanowire cells, were investigated. The results show that the top cover does not prevent the I( - ) and I(3)( - ) ions underneath from diffusing freely in the electrolyte and causes no deterioration of the cell performance. The nanoframe cell is a promising device in which nanowire arrays are strengthened and the effective internal surface area has the potentiality to be increased without sacrificing the advantages of nanowire cells compared to nanoparticle cells.

  View details for DOI 10.1088/0957-4484/21/18/185303

  View details for Web of Science ID 000276672100009

  View details for PubMedID 20378944

• Uniaxial Stress Engineering for High-Performance Ge NMOSFETs IEEE TRANSACTIONS ON ELECTRON DEVICES Kobayashi, M., Irisawa, T., Magyari-Koepe, B., Saraswat, K., Wong, H. P., Nishi, Y. 2010; 57 (5): 1037-1046

  View details for DOI 10.1109/TED.2010.2042767

  View details for Web of Science ID 000278066500011

• The effects of wet surface clean and in situ interlayer on In-0.52Al0.48As metal-oxide-semiconductor characteristics APPLIED PHYSICS LETTERS Kobayashi, M., Thareja, G., Sun, Y., Goel, N., Garner, M., Tsai, W., Pianetta, P., Nishi, Y. 2010; 96 (14)

  View details for DOI 10.1063/1.3379024

  View details for Web of Science ID 000276554600066

• Numerical simulation of vacuum-ultraviolet irradiation of dielectric layers APPLIED PHYSICS LETTERS Sinha, H., Ren, H., SEHGAL, A., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 96 (14)

  View details for DOI 10.1063/1.3386531

  View details for Web of Science ID 000276554600063

• Effects of postgate dielectric treatment on germanium-based metal-oxide-semiconductor device by supercritical fluid technology APPLIED PHYSICS LETTERS Liu, P., Huang, C., Huang, Y., Lin, J., Cheng, S., Nishi, Y., Sze, S. M. 2010; 96 (11)

  Abstract

  Supercritical fluid (SCF) technology is employed at low temperature as a postgate dielectric treatment to improve gate SiO(2)germanium (Ge) interface in a Ge-based metal-oxide-semiconductor (Ge-MOS) device. The SCF can transport the oxidant and penetrate the gate oxide layer for the oxidation of SiO(2)Ge interface at 150 degrees C. A smooth interfacial GeO(2) layer between gate SiO(2) and Ge is thereby formed after SCF treatment, and the frequency dispersion of capacitance-voltage characteristics is also effectively alleviated. Furthermore, the electrical degradation of Ge-MOS after a postgate dielectric annealing at 450 degrees C can be restored to a extent similar to the initial state.

  View details for DOI 10.1063/1.3365177

  View details for Web of Science ID 000275825200042

  View details for PubMedCentralID PMC2852447

• Bilayer metal gate electrodes with tunable work function: Mechanism and proposed model JOURNAL OF APPLIED PHYSICS Lu, C., Wong, G. M., Birringer, R., Dauskardt, R., Deal, M. D., Clemens, B. M., Nishi, Y. 2010; 107 (6)

  View details for DOI 10.1063/1.3326237

  View details for Web of Science ID 000276210800055

• Effect of vacuum ultraviolet and ultraviolet Irradiation on capacitance-voltage characteristics of low-k-porous organosilicate dielectrics APPLIED PHYSICS LETTERS Sinha, H., Lauer, J. L., Nichols, M. T., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 96 (5)

  View details for DOI 10.1063/1.3306729

  View details for Web of Science ID 000274319500075

• Fully inverted single-digit nanometer domains in ferroelectric films APPLIED PHYSICS LETTERS Tayebi, N., Narui, Y., Franklin, N., Collier, C. P., Giapis, K. P., Nishi, Y., Zhang, Y. 2010; 96 (2)

  View details for DOI 10.1063/1.3280371

  View details for Web of Science ID 000273689400050

• Photonic Crystal and Plasmonic Silicon-Based Light Sources IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Makarova, M., Gong, Y., Cheng, S., Nishi, Y., Yerci, S., Li, R., Dal Negro, L., Vuckovic, J. 2010; 16 (1): 132-140

  View details for DOI 10.1109/JSTQE.2009.2030777

  View details for Web of Science ID 000274382900016

• Development of high-k dielectric for Antimonides and a sub 350 degrees C III-V pMOSFET outperforming Germanium International Electron Devices Meeting (IEDM) Nainani, A., Irisawa, T., Yuan, Z., Sun, Y., Krishnamohan, T., Reason, M., Bennett, B. R., Boos, J. B., Ancona, M. G., Nishi, Y., Saraswat, K. C. IEEE. 2010

  View details for Web of Science ID 000287997300033

• High Performance Germanium N-MOSFET with Antimony Dopant Activation Beyond 1x10(20) cm(-3) International Electron Devices Meeting (IEDM) Thareja, G., Liang, J., Chopra, S., Adams, B., Patil, N., Cheng, S., Nainani, A., Tasyurek, E., Kim, Y., Moffatt, S., Brennan, R., McVittie, J., KAMINS, T., Saraswat, K., Nishi, Y. IEEE. 2010

  View details for Web of Science ID 000287997300060

• Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6) Kobayashi, S., Nishi, Y., Saraswat, K. C. ELSEVIER SCIENCE SA. 2010: S136–S139

  View details for DOI 10.1016/j.tsf.2009.10.072

  View details for Web of Science ID 000274812400030

• Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation JOURNAL OF THE ELECTROCHEMICAL SOCIETY Tada, M., Park, J., Kuzum, D., Thareja, G., Jain, J. R., Nishi, Y., Saraswat, K. C. 2010; 157 (3): H371-H376

  View details for DOI 10.1149/1.3295703

  View details for Web of Science ID 000274321900093

• Understanding of switching phenomena in unipolar NiO-based RRAM Globecom Workshops Lee, H. D., Nishi, Y. IEEE. 2010: 1886–1889

  View details for Web of Science ID 000291611300357

• Quasi-Passive and Reconfigurable Node for Optical Access Network Conference on Lasers and Electro-Optics (CLEO)/Quantum Electronics and Laser Science Conference (QELS) Yen, S., Tendulkar, M., Jameson, J. R., Yamashita, S., Nishi, Y., Solgaard, O., Kazovsky, L. G. IEEE. 2010

  View details for Web of Science ID 000290513601076

• Experimental Demonstration of High Source Velocity and Its Enhancement by Uniaxial Stress in Ge PFETs Symposium on VLSI Technology (VLSIT) Kobabyashi, M., Mitard, J., Irisawa, T., Hoffmann, T., Meuris, M., Saraswat, K., Nishi, Y., Heyns, M. IEEE. 2010: 215–216

  View details for Web of Science ID 000287495500082

• Characterizations of direct band gap photoluminescence and electroluminescence from epi-Ge on Si 4th SiGe, Ge, and Related Compounds - Materials, Processing and Devices Symposium held at the 218th Meeting of the Electrochemical-Society (ECS) Cheng, S., Shambat, G., Lu, J., Yu, H., Saraswat, K., Vuckovic, J., Nishi, Y. ELECTROCHEMICAL SOC INC. 2010: 545–54

  View details for DOI 10.1149/1.3487585

  View details for Web of Science ID 000314957600056

• Charge Trapping within UV and Vacuum UV Irradiated Low-k Porous Organosilicate Dielectrics JOURNAL OF THE ELECTROCHEMICAL SOCIETY Lauer, J. L., Sinha, H., Nichols, M. T., Antonelli, G. A., Nishi, Y., Shohet, J. L. 2010; 157 (8): G177-G182

  View details for DOI 10.1149/1.3435285

  View details for Web of Science ID 000279673400052

• Radical oxidation of germanium for interface gate dielectric GeO2 formation in metal-insulator-semiconductor gate stack JOURNAL OF APPLIED PHYSICS Kobayashi, M., Thareja, G., Ishibashi, M., Sun, Y., Griffin, P., McVittie, J., Pianetta, P., Saraswat, K., Nishi, Y. 2009; 106 (10)

  View details for DOI 10.1063/1.3259407

  View details for Web of Science ID 000272932300103

• Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si APPLIED PHYSICS LETTERS Yu, H., Kim, D., Ren, S., Kobayashi, M., Miller, D. A., Nishi, Y., Saraswat, K. C. 2009; 95 (16)

  View details for DOI 10.1063/1.3254181

  View details for Web of Science ID 000271218200006

• Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n(+)/p-Junction Diode IEEE ELECTRON DEVICE LETTERS Yu, H., Cheng, S., Griffin, P. B., Nishi, Y., Saraswat, K. C. 2009; 30 (9): 1002-1004

  View details for DOI 10.1109/LED.2009.2027823

  View details for Web of Science ID 000269443000037

• Image Charge and Dipole Combination Model for the Schottky Barrier Tuning at the Dopant Segregated Metal/Semiconductor Interface IEEE ELECTRON DEVICE LETTERS Geng, L., Magyari-Koepe, B., Nishi, Y. 2009; 30 (9): 963-965

  View details for DOI 10.1109/LED.2009.2025785

  View details for Web of Science ID 000269443000024

• The Effect of Oxygen on the Work Function of Tungsten Gate Electrodes in MOS Devices IEEE ELECTRON DEVICE LETTERS Grubbs, M. E., Deal, M., Nishi, Y., Clemens, B. M. 2009; 30 (9): 925-927

  View details for DOI 10.1109/LED.2009.2026717

  View details for Web of Science ID 000269443000011

• Atomic Layer Deposition of Dielectrics on Ge and III-V Materials for Ultrahigh Performance Transistors MRS BULLETIN Wallace, R. M., McIntyre, P. C., Kim, J., Nishi, Y. 2009; 34 (7): 493-503

  View details for Web of Science ID 000268159400015

• Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate. Optics express Cheng, S., Lu, J., Shambat, G., Yu, H., Saraswat, K., Vuckovic, J., Nishi, Y. 2009; 17 (12): 10019-10024

  Abstract

  We report the room temperature electroluminescence (EL) at 1.6 microm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.

  View details for PubMedID 19506652

• Solution-processed flexible organic transistors showing very-low subthreshold slope with a bilayer polymeric dielectric on plastic APPLIED PHYSICS LETTERS Liu, Z., Oh, J. H., Roberts, M. E., Wei, P., Paul, B. C., Okajima, M., Nishi, Y., Bao, Z. 2009; 94 (20)

  View details for DOI 10.1063/1.3133902

  View details for Web of Science ID 000266342800065

• Surface Science of Catalyst Dynamics for Aligned Carbon Nanotube Synthesis on a Full-Scale Quartz Wafer JOURNAL OF PHYSICAL CHEMISTRY C Akinwande, D., Patil, N., Lin, A., Nishi, Y., Wong, H. P. 2009; 113 (19): 8002-8008

  View details for DOI 10.1021/jp810794y

  View details for Web of Science ID 000265895500005

• Effect of thermal annealing on charge exchange between oxygen interstitial defects within HfO2 and oxygen-deficient silicon centers within the SiO2/Si interface APPLIED PHYSICS LETTERS Lauer, J. L., Shohet, J. L., Nishi, Y. 2009; 94 (16)

  View details for DOI 10.1063/1.3122925

  View details for Web of Science ID 000265823300054

• Modeling the spatio-temporal network that drives patterning in the vertebrate central nervous system BIOCHIMICA ET BIOPHYSICA ACTA-GENE REGULATORY MECHANISMS Nishi, Y., Ji, H., Wong, W. H., McMahon, A. P., Vokes, S. A. 2009; 1789 (4): 299-305

  Abstract

  In this review, we discuss the gene regulatory network underlying the patterning of the ventral neural tube during vertebrate embryogenesis. The neural tube is partitioned into domains of distinct cell fates by inductive signals along both anterior-posterior and dorsal-ventral axes. A defining feature of the dorsal-ventral patterning is the graded distribution of Sonic hedgehog (Shh), which acts as a morphogen to specify several classes of ventral neurons in a concentration-dependent fashion. These inductive signals translate into patterned expressions of transcription factors that define different neural progenitor subtypes. Progenitor boundaries are sharpened by repressive interactions between these transcription factors. The progenitor-expressed transcription factors induce another set of transcription factors that are thought to contribute to neural identities in post-mitotic neural precursors. Thus, the gene regulatory network of the ventral neural tube patterning is characterized by hierarchical expression [inductive signal-->progenitor specifying factors (mitotic)--> precursor specifying factors (post mitotic)--> differentiated neural markers] and cross-repression between progenitor-expressed regulatory factors. Although a number of transcriptional regulators have been identified at each hierarchical level, their precise regulatory relationships are not clear. Here we discuss approaches aimed at clarifying and extending our understanding of the formation and propagation of this network.

  View details for DOI 10.1016/j.bbagrm.2009.01.002

  View details for Web of Science ID 000265729800008

  View details for PubMedID 19445894

• Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface CHINESE PHYSICS LETTERS Geng Li, L., Magyari-Kope Blanka, B., Zhang Zhi-Yong, Z. Y., Nishi Yoshio, Y. 2009; 26 (3)

  View details for Web of Science ID 000263601300066

• Experimental Study and Statistical Analysis of Solution-Shearing Processed Organic Transistors Based on an Asymmetric Small-Molecule Semiconductor IEEE TRANSACTIONS ON ELECTRON DEVICES Liu, Z., Becerril, H. A., Roberts, M. E., Nishi, Y., Bao, Z. 2009; 56 (2): 176-185

  View details for DOI 10.1109/TED.2008.2010580

  View details for Web of Science ID 000262816800004

• Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application JOURNAL OF APPLIED PHYSICS Kobayashi, M., Kinoshita, A., Saraswat, K., Wong, H. P., Nishi, Y. 2009; 105 (2)

  View details for DOI 10.1063/1.3065990

  View details for Web of Science ID 000262970900048

• Plasmonic enhancement of emission from Si-nanocrystals APPLIED PHYSICS LETTERS Gong, Y., Lu, J., Cheng, S., Nishi, Y., Vuckovic, J. 2009; 94 (1)

  View details for DOI 10.1063/1.3055602

  View details for Web of Science ID 000262357800073

• Plasmonic Metal-Insulator-Metal Structures for Interaction with Silicon Nanocrystals Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009) Gong, Y., Cheng, S., Nishi, Y., Vuckovic, J. IEEE. 2009: 1818–1819

  View details for Web of Science ID 000274751301234

• Lattice and electronic effects in rutile TiO2 containing charged oxygen defects from ab initio calculations Symposium on Materials and Physics for Nonvolatile Memories held at the 2009 MRS Spring Meeting Park, S., Magyari-Kope, B., Nishi, Y. MATERIALS RESEARCH SOCIETY. 2009: 129–134

  View details for Web of Science ID 000274017200016

• Impact of hydrogen on the electroforming of Pr0.7Ca0.3MnO3 resistance-change memory devices 10th Annual Non-Volatile Memory Technology Symposium Tendulkar, M. P., Jameson, J. R., Griffin, P. B., McVittie, J. P., Nishi, Y. IEEE. 2009: 48–51

  View details for Web of Science ID 000278758600007

• Physical Model of the Impact of Metal Grain Work Function Variability on Emerging Dual Metal Gate MOSFETs and its Implication for SRAM Reliability IEEE International Electron Devices Meeting (IEDM 2009) Zhang, X., Li, J., Grubbs, M., Deal, M., Magyari-Kope, B., Clemens, B. M., Nishi, Y. IEEE. 2009: 51–54

  View details for Web of Science ID 000279343900012

• High Performance n-MOSFETs with Novel Source/Drain on Selectively Grown Ge on Si for Monolithic Integration IEEE International Electron Devices Meeting (IEDM 2009) Yu, H., Kobayashi, M., Jung, W. S., Okyay, A. K., Nishi, Y., Saraswat, K. C. IEEE. 2009: 641–644

  View details for Web of Science ID 000279343900166

• High Quality GeO2/Ge Interface Formed by SPA Radical Oxidation and Uniaxial Stress Engineering for High Performance Ge NMOSFETs Symposium on VLSI Technology Kobayashi, M., Irisawa, T., Kope, B. M., Sun, Y., Saraswat, K., Wong, H. P., Pianetta, P., Nishi, Y. JAPAN SOCIETY APPLIED PHYSICS. 2009: 76–77

  View details for Web of Science ID 000275651200027

• Ab initio study of Al-Ni bilayers on SiO2: Implications to effective work function modulation in gate stacks JOURNAL OF APPLIED PHYSICS Magyari-Kope, B., Park, S., Colombo, L., Nishi, Y., Cho, K. 2009; 105 (1)

  View details for DOI 10.1063/1.3033368

  View details for Web of Science ID 000262534100088

• Carbon Nanotube Quantum Capacitance for Nonlinear Terahertz Circuits IEEE TRANSACTIONS ON NANOTECHNOLOGY Akinwande, D., Nishi, Y., Wong, H. P. 2009; 8 (1): 31-36

  View details for DOI 10.1109/TNANO.2008.2005185

  View details for Web of Science ID 000262861500006

• Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si 22nd Annual Meeting of the IEEE-Photonics-Society Yu, H., Ren, S., Kobayashi, M., Miller, D. A., Nishi, Y., Saraswat, K. C. IEEE. 2009: 369–370

  View details for Web of Science ID 000279577600191

• Analytical ballistic theory of carbon nanotube transistors: Experimental validation, device physics, parameter extraction, and performance projection JOURNAL OF APPLIED PHYSICS Akinwande, D., Liang, J., Chong, S., Nishi, Y., Wong, H. P. 2008; 104 (12)

  View details for DOI 10.1063/1.3050345

  View details for Web of Science ID 000262225100123

• Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces APPLIED PHYSICS LETTERS Sun, Y., Pianetta, P., Chen, P., Kobayashi, M., Nishi, Y., Goel, N., Garner, M., Tsai, W. 2008; 93 (19)

  View details for DOI 10.1063/1.3025852

  View details for Web of Science ID 000260944100134

• Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In0.53Ga0.47As and In0.52Al0.48As APPLIED PHYSICS LETTERS Kobayashi, M., Chen, P. T., Sun, Y., Goel, N., Majhi, P., GARNER, M., Tsai, W., Pianetta, P., Nishi, Y. 2008; 93 (18)

  View details for DOI 10.1063/1.3020298

  View details for Web of Science ID 000260778100030

• Integrating phase-change memory cell with Ge nanowire diode for crosspoint memory-experimental demonstration and analysis 25th IEEE VLSI Test Symposium Kim, S., Zhang, Y., McVittie, J. P., Jagannathan, H., Nishi, Y., Wong, H. P. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2008: 2307–13

  View details for DOI 10.1109/TED.2008.927631

  View details for Web of Science ID 000258914000003

• Ab initio modeling of Schottky-barrier height tuning by yttrium at nickel silicide/silicon interface IEEE ELECTRON DEVICE LETTERS Geng, L., Magyari-Kope, B., Zhang, Z., Nishi, Y. 2008; 29 (7): 746-749

  View details for DOI 10.1109/LED.2008.2000647

  View details for Web of Science ID 000257626000029

• Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1-xO2/(100)Si interfaces JOURNAL OF APPLIED PHYSICS Chen, P. T., Triplett, B. B., Chambers, J. J., Colombo, L., McIntyre, P. C., Nishi, Y. 2008; 104 (1)

  View details for DOI 10.1063/1.2948922

  View details for Web of Science ID 000257766500104

• High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts IEEE ELECTRON DEVICE LETTERS Feng, J., Thareja, G., Kobayashi, M., Chen, S., Poon, A., Bai, Y., Griffin, P. B., Wong, S. S., Nishi, Y., Plummer, J. D. 2008; 29 (7): 805-807

  View details for DOI 10.1109/LED.2008.2000613

  View details for Web of Science ID 000257626000047

• Electronic structures of Nb-W bulk and surface from first principles calculation JOURNAL OF APPLIED PHYSICS Gong, H. R., Nishi, Y., Cho, K. 2008; 103 (4)

  View details for DOI 10.1063/1.2844467

  View details for Web of Science ID 000254191300024

• HfO2 gate dielectric on (NH4)(2)S passivated (100) GaAs grown by atomic layer deposition JOURNAL OF APPLIED PHYSICS Chen, P. T., Sun, Y., Kim, E., McIntyre, P. C., Tsai, W., GARNER, M., Pianetta, P., Nishi, Y., Chui, C. O. 2008; 103 (3)

  View details for DOI 10.1063/1.2838471

  View details for Web of Science ID 000253238100054

• Ultra-high bandwidth memory with 3D-stacked emerging memory cells IEEE International Conference on Integrated Circuit Design and Technology Abe, K., Tendulkar, M. P., Jameson, J. R., Griffin, P. B., Nomura, K., Fujita, S., Nishi, Y. IEEE. 2008: 203–206

  View details for Web of Science ID 000258326600049

• Challenge of Nanoelectronic Materials and Devices toward New Nonvolatile Memories 9th International Conference on Solid-State and Integrated-Circuit Technology Nishi, Y., Jameson, J. IEEE. 2008: 892–896

  View details for Web of Science ID 000265971001069

• Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drainage NMOSFET Symposium on VLSI Technology Kobayashi, M., Kinoshita, A., Saraswat, K., Wong, H. P., Nishi, Y. IEEE. 2008: 54–55

  View details for Web of Science ID 000259116200020

• Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain GeNMOSFET Symposium on VLSI Technology Kobayashi, M., Kinoshita, A., Saraswat, K., Wong, H. P., Nishi, Y. IEEE. 2008: 43–44

  View details for Web of Science ID 000259442500020

• Passivation studies of germanium surfaces 8th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) Kim, J., McVittie, J., Saraswat, K., Nishi, Y. TRANS TECH PUBLICATIONS LTD. 2008: 33–36

  View details for Web of Science ID 000253389300008

• An analytical derivation of the density of states, effective mass, and carrier density for achiral carbon nanotubes IEEE TRANSACTIONS ON ELECTRON DEVICES Akinwande, D., Nishi, Y., Wong, H. P. 2008; 55 (1): 289-297

  View details for DOI 10.1109/TED.2007.911078

  View details for Web of Science ID 000252059000027

• First-principles study of resistance switching in rutile TiO2 with oxygen vacancy 9th Annual Non-Volatile Memory Technology Symposium Park, S., Magyari-Kope, B., Nishi, Y. IEEE. 2008: 49–53

  View details for Web of Science ID 000266157200011

• Effects of strain and interface on work function of a Nb-W metal gate system APPLIED PHYSICS LETTERS Gong, H. R., Nishi, Y., Cho, K. 2007; 91 (24)

  View details for DOI 10.1063/1.2821225

  View details for Web of Science ID 000251678700037

• Field-programmable rectification in rutile TiO2 crystals APPLIED PHYSICS LETTERS Jameson, J. R., Fukuzumi, Y., Wang, Z., Griffin, P., Tsunoda, K., Meijer, G. I., Nishi, Y. 2007; 91 (11)

  View details for DOI 10.1063/1.2769961

  View details for Web of Science ID 000249474000038

• Impact of a process variation on nanowire and nanotube device performance IEEE TRANSACTIONS ON ELECTRON DEVICES Paul, B. C., Fujita, S., Okajima, M., Lee, T. H., Wong, H. P., Nishi, Y. 2007; 54 (9): 2369-2376

  View details for DOI 10.1109/TED.2007.901882

  View details for Web of Science ID 000249104900030

• High performance, uniaxially-strained, silicon and germanium, double-gate p-MOSFETs 15th Biennial Conference on Insulating Films on Semiconductors Krishnamohan, T., Jungemann, C., Kim, D., Ungersboeck, E., Selberherr, S., Pham, A., Meinerzhagen, B., Wong, P., Nishi, Y., Saraswat, K. C. ELSEVIER SCIENCE BV. 2007: 2063–66

  View details for DOI 10.1016/j.mee.2007.04.085

  View details for Web of Science ID 000247378600052

• High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous LaAlO3 gate dielectric APPLIED PHYSICS LETTERS Goel, N., Majhi, P., Tsai, W., Warusawithana, M., Schlom, D. G., Santos, M. B., Harris, J. S., Nishi, Y. 2007; 91 (9)

  View details for DOI 10.1063/1.2776846

  View details for Web of Science ID 000249156100134

• Electro-thermally coupled power optimization for future transistors and its applications IEEE TRANSACTIONS ON ELECTRON DEVICES Chao, A. K., Kapur, P., Morifuji, E., Saraswat, K., Nishi, Y. 2007; 54 (7): 1696-1704

  View details for DOI 10.1109/TED.2007.898242

  View details for Web of Science ID 000247643800015

• An analytical compact circuit model for nanowire FET IEEE TRANSACTIONS ON ELECTRON DEVICES Paul, B. C., Tu, R., Fujita, S., Okajima, M., Lee, T. H., Nishi, Y. 2007; 54 (7): 1637-1644

  View details for DOI 10.1109/TED.2007.899397

  View details for Web of Science ID 000247643800007

• Measuring the capacitance of individual semiconductor nanowires for carrier mobility assessment NANO LETTERS Tu, R., Zhang, L., Nishi, Y., Dai, H. 2007; 7 (6): 1561-1565

  Abstract

  Capacitance-voltage characteristics of individual germanium nanowire field effect transistors were directly measured and used to assess carrier mobility in nanowires for the first time, thereby removing uncertainties in calculated mobility due to device geometries, surface and interface states, and gate dielectric constants and thicknesses. Direct experimental evidence showed that surround-gated nanowire transistors exhibit higher capacitance and better electrostatic gate control than top-gated devices, and are the most promising structure for future high performance nanoelectronics.

  View details for DOI 10.1021/nl070378w

  View details for Web of Science ID 000247186800023

  View details for PubMedID 17488051

• Power optimization for SRAM and its scaling IEEE TRANSACTIONS ON ELECTRON DEVICES Morifuji, E., Patil, D., Horowitz, M., Nishi, Y. 2007; 54 (4): 715-722

  View details for DOI 10.1109/TED.2007.891869

  View details for Web of Science ID 000245327900014

• Bipolar resistive switching in polycrystalline TiO2 films APPLIED PHYSICS LETTERS Tsunoda, K., Fukuzumi, Y., Jameson, J. R., Wang, Z., Griffin, P. B., Nishi, Y. 2007; 90 (11)

  View details for DOI 10.1063/1.2712777

  View details for Web of Science ID 000244959200094

• Resistive switching mechanism in ZnxCd1-xS nonvolatile memory devices IEEE ELECTRON DEVICE LETTERS Wang, Z., Griffin, P. B., McVittie, J., Wong, S., McIntyre, P. C., Nishi, Y. 2007; 28 (1): 14-16

  View details for DOI 10.1109/LED.2006.887640

  View details for Web of Science ID 000243280900006

• Analytical model of carbon nanotube electrostatics: Density of states, effective mass, carrier density, and quantum capacitance IEEE International Electron Devices Meeting Akinwande, D., Nishi, Y., Wong, H. P. IEEE. 2007: 753–756

  View details for Web of Science ID 000259347800172

• Electron spin resonance study of as-deposited and annealed (HfO2)(x)(SiO2)(1-x) high-kappa dielectrics on Si JOURNAL OF APPLIED PHYSICS Triplett, B. B., Chen, P. T., Nishi, Y., Kasai, P. H., Chambers, J. J., Colombo, L. 2007; 101 (1)

  View details for DOI 10.1063/1.2402974

  View details for Web of Science ID 000243585200047

• An integrated phase change memory cell with Ge nanowire diode for cross-point memory Symposium on VLSI Technology 2007 Zhang, Y., Kim, S., McVittie, J. P., Jagannathan, H., Ratchford, J. B., Chidsey, C. E., Nishi, Y., Wong, H. P. JAPAN SOCIETY APPLIED PHYSICS. 2007: 98–99

  View details for Web of Science ID 000250539900038

• High performance, strained-Ge, heterostructure pMOSFETs 12th International Conference on Simulation of Semiconductor Processes and Devices Krishnamohan, T., Kim, D., Jungemann, C., Pham, A., Meinerzhagen, B., Nishi, Y., Saraswat, K. C. SPRINGER-VERLAG WIEN. 2007: 21–24

  View details for Web of Science ID 000252105600005

• Photoluminescence decay dynamics of silicon-rich silicon nitride film in photonic crystal nanocavity 20th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society Makarova, M., Vuckovic, J., Sanda, H., Nishi, Y. IEEE. 2007: 329–330

  View details for Web of Science ID 000259345200162

• A semiclassical model of dielectric relaxation in glasses JOURNAL OF APPLIED PHYSICS Jameson, J. R., Harrison, W., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 100 (12)

  View details for DOI 10.1063/1.2397323

  View details for Web of Science ID 000243157900069

• Results of the search for inspiraling compact star binaries from TAMA300's observation in 2000-2004 PHYSICAL REVIEW D Akutsu, T., Akutsu, T., Ando, M., Arai, K., Araya, A., Asada, H., Aso, Y., Barton, M. A., Beyersdorf, P., Fujiki, Y., Fujimoto, M., Fujita, R., Fukushima, M., Futamase, T., Hamuro, Y., Haruyama, T., Hayakawa, H., Hayama, K., Heinzel, G., Horikoshi, G., Iguchi, H., Iida, Y., Ioka, K., Ishitsuka, H., Kamikubota, N., Kanda, N., Kaneyama, T., Karasawa, Y., Kasahara, K., Kasai, T., Katsuki, M., Kawabe, K., Kawamura, M., Kawamura, S., Kawashima, N., Kawazoe, F., Kojima, Y., Kokeyama, K., Kondo, K., Kozai, Y., Kudoh, H., Kuroda, K., Kuwabara, T., Matsuda, N., Mio, N., Miura, K., Miyakawa, O., Miyama, S., Miyoki, S., Mizusawa, H., Moriwaki, S., Musha, M., Nagano, S., Nagayama, Y., Nakagawa, K., Nakamura, T., Nakano, H., Nakao, K., Nishi, Y., Numata, K., Ogawa, Y., Ohashi, M., Ohishi, N., Okutomi, A., Oohara, K., Otsuka, S., Sago, N., Saito, Y., Sakata, S., Sasaki, M., Sato, K., Sato, N., Sato, S., Sato, Y., Seki, H., Sekido, A., Seto, N., Shibata, M., Shinkai, H., Shintomi, T., Soida, K., Somiya, K., Suzuki, T., Tagoshi, H., Takahashi, H., Takahashi, R., Takamori, A., Takemoto, S., Takeno, K., Tanaka, T., Taniguchi, K., Taniguchi, S., Tanji, T., Tatsumi, D., Taylor, C. T., Telada, S., Tochikubo, K., Tokunari, M., Tomaru, T., Tsubono, K., Tsuda, N., Tsunesada, Y., Uchiyama, T., Ueda, A., Ueda, K., Usui, F., Waseda, K., Watanabe, Y., Yakura, H., Yamamoto, A., Yamamoto, K., Yamazaki, T., Yanagi, Y., Yoda, T., Yokoyama, J., Yoshida, T., Zhu, Z. 2006; 74 (12)

  View details for DOI 10.1103/PhysRevD.74.122002

  View details for Web of Science ID 000243171800009

• Silicon-based photonic crystal nanocavity light emitters APPLIED PHYSICS LETTERS Makarova, M., Vuckovic, J., Sanda, H., Nishi, Y. 2006; 89 (22)

  View details for DOI 10.1063/1.2396903

  View details for Web of Science ID 000242538500001

• Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Jagannathan, H., Deal, M., Nishi, Y., Kim, H., Freer, E. M., Sundstrom, L., Topuria, T., Rice, P. M. 2006; 24 (5): 2220-2224

  View details for DOI 10.1116/1.2244543

  View details for Web of Science ID 000241476500008

• Charge trapping in high-k gate stacks due to the bilayer structure itself IEEE TRANSACTIONS ON ELECTRON DEVICES Jameson, J. R., Griffin, P. B., Plummer, J. D., Nishi, Y. 2006; 53 (8): 1858-1867

  View details for DOI 10.1109/TED.2006.877700

  View details for Web of Science ID 000239286700015

• Nature of germanium nanowire heteroepitaxy on silicon substrates JOURNAL OF APPLIED PHYSICS Jagannathan, H., Deal, M., Nishi, Y., Woodruff, J., Chidsey, C., McIntyre, P. C. 2006; 100 (2)

  View details for DOI 10.1063/1.2219007

  View details for Web of Science ID 000239423400124

• Joint LIGO and TAMA300 search for gravitational waves from inspiralling neutron star binaries PHYSICAL REVIEW D Abbott, B., Abbott, R., Adhikari, R., Ageev, A., Agresti, J., Ajith, P., Allen, B., Allen, J., Amin, R., Anderson, S. B., Anderson, W. G., Araya, M., Armandula, H., Ashley, M., Asiri, F., Aufmuth, P., Aulbert, C., Babak, S., Balasubramanian, R., Ballmer, S., Barish, B. C., Barker, C., Barker, D., Barnes, M., Barr, B., Barton, M. A., Bayer, K., Beausoleil, R., Belczynski, K., Bennett, R., Berukoff, S. J., Betzwieser, J., Bhawal, B., Bilenko, I. A., Billingsley, G., Black, E., Blackburn, K., Blackburn, L., Bland, B., Bochner, B., Bogue, L., Bork, R., Bose, S., Brady, P. R., Braginsky, V. B., Brau, J. E., Brown, D. A., Bullington, A., Bunkowski, A., Buonanno, A., Burgess, R., Busby, D., Butler, W. E., Byer, R. L., Cadonati, L., Cagnoli, G., Camp, J. B., Cannizzo, J., Cannon, K., Cantley, C. A., Cao, J., Cardenas, L., Carter, K., Casey, M. M., Castiglione, J., Chandler, A., Chapsky, J., Charlton, P., Chatterji, S., Chelkowski, S., Chen, Y., Chickarmane, V., Chin, D., Christensen, N., Churches, D., Cokelaer, T., Colacino, C., Coldwell, R., Coles, M., Cook, D., Corbitt, T., Coyne, D., Creighton, J. D., Creighton, T. D., Crooks, D. R., Csatorday, P., Cusack, B. J., Cutler, C., Dalrymple, J., D'Ambrosio, E., Danzmann, K., Davies, G., Daw, E., DeBra, D., Delker, T., Dergachev, V., Desai, S., DeSalvo, R., Dhurandhar, S., Di Credico, A., Diaz, M., Ding, H., Drever, R. W., Dupuis, R. J., Edlund, J. A., Ehrens, P., Elliffe, E. J., Etzel, T., Evans, M., Evans, T., Fairhurst, S., Fallnich, C., Farnham, D., Fejer, M. M., Findley, T., Fine, M., Finn, L. S., Franzen, K. Y., Freise, A., Frey, R., Fritschel, P., Frolov, V. V., Fyffe, M., Ganezer, K. S., Garofoli, J., Giaime, J. A., Gillespie, A., Goda, K., Goggin, L., Gonzalez, G., Gossler, S., Grandclement, P., Grant, A., Gray, C., Gretarsson, A. M., Grimmett, D., GROTE, H., Grunewald, S., Guenther, M., Gustafson, E., Gustafson, R., Hamilton, W. O., Hammond, M., Hanna, C., Hanson, J., Hardham, C., Harms, J., Harry, G., Hartunian, A., Heefner, J., Hefetz, Y., Heinzel, G., Heng, I. S., Hennessy, M., Hepler, N., Heptonstall, A., Heurs, M., Hewitson, M., Hild, S., Hindman, N., Hoang, P., Hough, J., Hrynevych, M., Hua, W., Ito, M., Itoh, Y., Ivanov, A., Jennrich, O., Johnson, B., Johnson, W. W., Johnston, W. R., Jones, D. I., Jones, G., Jones, L., Jungwirth, D., Kalogera, V., Katsavounidis, E., Kawabe, K., Kells, W., Kern, J., Khan, A., Killbourn, S., Killow, C. J., Kim, C., King, C., King, P., Klimenko, S., Koranda, S., Koetter, K., Kovalik, J., Kozak, D., Krishnan, B., Landry, M., Langdale, J., Lantz, B., Lawrence, R., Lazzarini, A., Lei, M., Leonor, I., Libbrecht, K., Libson, A., Lindquist, P., Liu, S., Logan, J., Lormand, M., Lubinski, M., Lueck, H., Luna, M., Lyons, T. T., Machenschalk, B., MacInnis, M., Mageswaran, M., Mailand, K., Majid, W., Malec, M., Mandic, V., Mann, F., Marin, A., Marka, S., Maros, E., Mason, J., Mason, K., Matherny, O., Matone, L., Mavalvala, N., McCarthy, R., McClelland, D. E., McHugh, M., McNabb, J. W., Melissinos, A., Mendell, G., Mercer, R. A., Meshkov, S., Messaritaki, E., Messenger, C., Mikhailov, E., Mitra, S., Mitrofanov, V. P., Mitselmakher, G., Mittleman, R., Miyakawa, O., Mohanty, S., Moreno, G., Mossavi, K., Mueller, G., Mukherjee, S., Murray, P., Myers, E., Myers, J., Nagano, S., Nash, T., Nayak, R., Newton, G., Nocera, F., Noel, J. S., Nutzman, P., Olson, T., O'Reilly, B., Ottaway, D. J., Ottewill, A., Ouimette, D., Overmier, H., Owen, B. J., Pan, Y., Papa, M. A., Parameshwaraiah, V., Parameswariah, C., Pedraza, M., Penn, S., Pitkin, M., Plissi, M., Prix, R., Quetschke, V., Raab, F., Radkins, H., Rahkola, R., Rakhmanov, M., Rao, S. R., Rawlins, K., Ray-Majumder, S., Re, V., Redding, D., Regehr, M. W., Regimbau, T., Reid, S., Reilly, K. T., Reithmaier, K., Reitze, D. H., Richman, S., Riesen, R., Riles, K., Rivera, B., Rizzi, A., Robertson, D. I., Robertson, N. A., Robinson, C., Robison, L., Roddy, S., Rodriguez, A., Rollins, J., Romano, J. D., Romie, J., Rong, H., Rose, D., Rotthoff, E., Rowan, S., Ruediger, A., Ruet, L., Russell, P., Ryan, K., Salzman, I., Sandberg, V., Sanders, G. H., Sannibale, V., Sarin, P., Sathyaprakash, B., Saulson, P. R., Savage, R., Sazonov, A., Schilling, R., Schlaufman, K., Schmidt, V., Schnabel, R., Schofield, R., Schutz, B. F., Schwinberg, P., Scott, S. M., Seader, S. E., Searle, A. C., Sears, B., Seel, S., Seifert, F., Sellers, D., Sengupta, A. S., Shapiro, C. A., Shawhan, P., Shoemaker, D. H., Shu, Q. Z., Sibley, A., Siemens, X., Sievers, L., Sigg, D., Sintes, A. M., Smith, J. R., Smith, M., Smith, M. R., Sneddon, P. H., Spero, R., Spjeld, O., Stapfer, G., Steussy, D., Strain, K. A., Strom, D., Stuver, A., Summerscales, T., Sumner, M. C., Sung, M., Sutton, P. J., Sylvestre, J., Tanner, D. B., Tariq, H., Tarallo, M., Taylor, I., Taylor, R., Taylor, R., Thorne, K. A., Thorne, K. S., Tibbits, M., Tilav, S., Tinto, M., Tokmakov, K. V., Torres, C., Torrie, C., Traylor, G., Tyler, W., Ugolini, D., Ungarelli, C., Vallisneri, M., van Putten, M., Vass, S., Vecchio, A., Veitch, J., Vorvick, C., Vyachanin, S. P., Wallace, L., Walther, H., Ward, H., Ward, R., Ware, B., Watts, K., Webber, D., Weidner, A., Weiland, U., Weinstein, A., Weiss, R., Welling, H., Wen, L., Wen, S., Wette, K., Whelan, J. T., Whitcomb, S. E., Whiting, B. F., Wiley, S., Wilkinson, C., Willems, P. A., Williams, P. R., WILLIAMS, R., Willke, B., Wilson, A., Winjum, B. J., Winkler, W., Wise, S., Wiseman, A. G., Woan, G., Woods, D., Wooley, R., Worden, J., Wu, W., Yakushin, I., Yamamoto, H., Yoshida, S., Zaleski, K. D., Zanolin, M., Zawischa, I., Zhang, L., Zhu, R., Zotov, N., Zucker, M., Zweizig, J., Akutsu, T., Akutsu, T., Ando, M., Arai, K., ARAYA, A., Asada, H., Aso, Y., Beyersdorf, P., Fujiki, Y., Fujimoto, M., Fujita, R., Fukushima, M., Futamase, T., Hamuro, Y., Haruyama, T., Hayama, K., Iguchi, H., Iida, Y., Ioka, K., Ishitsuka, H., Kamikubota, N., Kanda, N., Kaneyama, T., Karasawa, Y., Kasahara, K., Kasai, T., Katsuki, M., Kawamura, S., Kawamura, M., Kawazoe, F., Kojima, Y., Kokeyama, K., Kondo, K., Kozai, Y., Kudoh, H., Kuroda, K., Kuwabara, T., Matsuda, N., Mio, N., Miura, K., Miyama, S., Miyoki, S., Mizusawa, H., Moriwaki, S., Musha, M., Nagayama, Y., Nakagawa, K., Nakamura, T., Nakano, H., Nakao, K., Nishi, Y., Numata, K., Ogawa, Y., Ohashi, M., Ohishi, N., Okutomi, A., Oohara, K., Otsuka, S., Saito, Y., Sakata, S., Sasaki, M., Sato, N., Sato, S., Sato, Y., Sato, K., Sekido, A., Seto, N., Shibata, M., Shinkai, H., Shintomi, T., Soida, K., Somiya, K., Suzuki, T., Tagoshi, H., Takahashi, H., Takahashi, R., Takamori, A., Takemoto, S., Takeno, K., Tanaka, T., Taniguchi, K., Tanji, T., Tatsumi, D., Telada, S., Tokunari, M., Tomaru, T., Tsubono, K., Tsuda, N., Tsunesada, Y., Uchiyama, T., Ueda, K., Ueda, A., Waseda, K., Yamamoto, A., Yamamoto, K., Yamazaki, T., Yanagi, Y., Yokoyama, J., Yoshida, T., Zhu, Z. 2006; 73 (10)

  View details for DOI 10.1103/PhysRevD.73.102002

  View details for Web of Science ID 000237951100005

• High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: Experiments IEEE TRANSACTIONS ON ELECTRON DEVICES Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., Saraswat, K. C. 2006; 53 (5): 990-999

  View details for DOI 10.1109/TED.2006.872362

  View details for Web of Science ID 000237369800005

• High-mobility low band-to-band-tunneling strained-germanium double-gate heterostructure FETs: Simulations IEEE TRANSACTIONS ON ELECTRON DEVICES Krishnamohan, T., Kim, D., Nguyen, C. D., Jungemann, C., Nishi, Y., Saraswat, K. C. 2006; 53 (5): 1000-1009

  View details for DOI 10.1109/TED.2006.872367

  View details for Web of Science ID 000237369800006

• DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high kappa dielectrics for nanotube transistors with 60 mV/decade switching JOURNAL OF THE AMERICAN CHEMICAL SOCIETY Lu, Y. R., Bangsaruntip, S., Wang, X. R., Zhang, L., Nishi, Y., Dai, H. J. 2006; 128 (11): 3518-3519

  Abstract

  For single-walled carbon nanotube (SWNT) field effect transistors, vertical scaling of high kappa dielectrics by atomic layer deposition (ALD) currently stands at approximately 8 nm with a subthreshold swing S approximately 70-90 mV/decade at room temperature. ALD on as-grown pristine SWNTs is incapable of producing a uniform and conformal dielectric layer due to the lack of functional groups on nanotubes and because nucleation of an oxide dielectric layer in the ALD process hinges upon covalent chemisorption on reactive groups on surfaces. Here, we show that by noncovalent functionalization of SWNTs with poly-T DNA molecules (dT40-DNA), one can impart functional groups of sufficient density and stability for uniform and conformal ALD of high kappa dielectrics on SWNTs with thickness down to 2-3 nm. This enables approaching the ultimate vertical scaling limit of nanotube FETs and reliably achieving S approximately 60 mV/decade at room temperature, and S approximately 50 mV/decade in the band-to-band tunneling regime of ambipolar transport. We have also carried out microscopy investigations to understand ALD processes on SWNTs with and without DNA functionalization.

  View details for DOI 10.1021/ja058836v

  View details for Web of Science ID 000236299700024

  View details for PubMedID 16536515

• Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires APPLIED PHYSICS LETTERS Jagannathan, H., Nishi, Y., Reuter, M., Copel, M., Tutuc, E., Guha, S., Pezzi, R. P. 2006; 88 (10)

  View details for DOI 10.1063/1.2179370

  View details for Web of Science ID 000235905800071

• Theoretical investigation of performance in uniaxially- and biaxially-strained Si, SiGe and Ge double-gate p-MOSFETs IEEE International Electron Devices Meeting Krishnamohan, T., Jungernann, C., Kim, D., Ungersboeck, E., Selberherr, S., Wong, P., Nishi, Y., Saraswat, K. IEEE. 2006: 681–684

  View details for Web of Science ID 000247357700170

• Silicon-based photonic crystal nanocavity light emitters 19th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society Makarova, M., Vnekovic, J., Sanda, H., Nishi, Y. IEEE. 2006: 240–241

  View details for Web of Science ID 000246167900122

• Upper limits from the LIGO and TAMA detectors on the rate of gravitational-wave bursts PHYSICAL REVIEW D Abbott, B., Abbott, R., Adhikari, R., Ageev, A., Agresti, J., Ajith, P., Allen, B., Allen, J., Amin, R., Anderson, S. B., Anderson, W. G., Araya, M., Armandula, H., Ashley, M., Asiri, F., Aufmuth, P., Aulbert, C., Babak, S., Balasubramanian, R., Ballmer, S., Barish, B. C., Barker, C., Barker, D., Barnes, M., Barr, B., Barton, M. A., Bayer, K., Beausoleil, R., Belczynski, K., Bennett, R., Berukoff, S. J., Betzwieser, J., Bhawal, B., Bilenko, I. A., Billingsley, G., Black, E., Blackburn, K., Blackburn, L., Bland, B., Bochner, B., Bogue, L., Bork, R., Bose, S., Brady, P. R., Braginsky, V. B., Brau, J. E., Brown, D. A., Bullington, A., Bunkowski, A., Buonanno, A., Burgess, R., Busby, D., Butler, W. E., Byer, R. L., Cadonati, L., Cagnoli, G., Camp, J. B., Cannizzo, J., Cannon, K., Cantley, C. A., Cao, J., Cardenas, L., Carter, K., Casey, M. M., Castiglione, J., Chandler, A., Chapsky, J., Charlton, P., Chatterji, S., Chelkowski, S., Chen, Y., Chickarmane, V., Chin, D., Christensen, N., Churches, D., Cokelaer, T., Colacino, C., Coldwell, R., Coles, M., Cook, D., Corbitt, T., Coyne, D., Creighton, J. D., Creighton, T. D., Crooks, D. R., Csatorday, P., Cusack, B. J., Cutler, C., Dalrymple, J., D'Ambrosio, E., Danzmann, K., Davies, G., Daw, E., DeBra, D., Delker, T., Dergachev, V., Desai, S., DeSalvo, R., Dhurandhar, S., Di Credico, A., Diaz, M., Ding, H., Drever, R. W., Dupuis, R. J., Edlund, J. A., Ehrens, P., Elliffe, E. J., Etzel, T., Evans, M., Evans, T., Fairhurst, S., Fallnich, C., Farnham, D., Fejer, M. M., Findley, T., Fine, M., Finn, L. S., Franzen, K. Y., Freise, A., Frey, R., Fritschel, P., Frolov, V. V., Fyffe, M., Ganezer, K. S., Garofoli, J., Giaime, J. A., Gillespie, A., Goda, K., Goggin, L., Gonzalez, G., Gossler, S., Grandclement, P., Grant, A., Gray, C., Gretarsson, A. M., Grimmett, D., GROTE, H., Grunewald, S., Guenther, M., Gustafson, E., Gustafson, R., Hamilton, W. O., Hammond, M., Hanna, C., Hanson, J., Hardham, C., Harms, J., Harry, G., Hartunian, A., Heefner, J., Hefetz, Y., Heinzel, G., Heng, I. S., Hennessy, M., Hepler, N., Heptonstall, A., Heurs, M., Hewitson, M., Hild, S., Hindman, N., Hoang, P., Hough, J., Hrynevych, M., Hua, W., Ito, M., Itoh, Y., Ivanov, A., Jennrich, O., Johnson, B., Johnson, W. W., Johnston, W. R., Jones, D. I., Jones, G., Jones, L., Jungwirth, D., Kalogera, V., Katsavounidis, E., Kawabe, K., Kells, W., Kern, J., Khan, A., Killbourn, S., Killow, C. J., Kim, C., King, C., King, P., Klimenko, S., Koranda, S., Kotter, K., Kovalik, J., Kozak, D., Krishnan, B., Landry, M., Langdale, J., Lantz, B., Lawrence, R., Lazzarini, A., Lei, M., Leonor, I., Libbrecht, K., Libson, A., Lindquist, P., Liu, S., Logan, J., Lormand, M., Lubinski, M., Luck, H., Luna, M., Lyons, T. T., Machenschalk, B., MacInnis, M., Mageswaran, M., Mailand, K., Majid, W., Malec, M., Mandic, V., Mann, F., Marin, A., Marka, S., Maros, E., Mason, J., Mason, K., Matherny, O., Matone, L., Mavalvala, N., McCarthy, R., McClelland, D. E., McHugh, M., McNabb, J. W., Melissinos, A., Mendell, G., Mercer, R. A., Meshkov, S., Messaritaki, E., Messenger, C., Mikhailov, E., Mitra, S., Mitrofanov, V. P., Mitselmakher, G., Mittleman, R., Miyakawa, O., Mohanty, S., Moreno, G., Mossavi, K., Mueller, G., Mukherjee, S., Murray, P., Myers, E., Myers, J., Nagano, S., Nash, T., Nayak, R., Newton, G., Nocera, F., Noel, J. S., Nutzman, P., Olson, T., O'Reilly, B., Ottaway, D. J., Ottewill, A., Ouimette, D., Overmier, H., Owen, B. J., Pan, Y., Papa, M. A., Parameshwaraiah, V., Parameswariah, C., Pedraza, M., Penn, S., Pitkin, M., Plissi, M., Prix, R., Quetschke, V., Raab, F., Radkins, H., Rahkola, R., Rakhmanov, M., Rao, S. R., Rawlins, K., Ray-Majumder, S., Re, V., Redding, D., Regehr, M. W., Regimbau, T., Reid, S., Reilly, K. T., Reithmaier, K., Reitze, D. H., Richman, S., Riesen, R., Riles, K., Rivera, B., Rizzi, A., Robertson, D. I., Robertson, N. A., Robinson, C., Robison, L., Roddy, S., Rodriguez, A., Rollins, J., Romano, J. D., Romie, J., Rong, H., Rose, D., Rotthoff, E., Rowan, S., Rudiger, A., Ruet, L., Russell, P., Ryan, K., Salzman, I., Sandberg, V., Sanders, G. H., Sannibale, V., Sarin, P., Sathyaprakash, B., Saulson, P. R., Savage, R., Sazonov, A., Schilling, R., Schlaufman, K., Schmidt, V., Schnabel, R., Schofield, R., Schutz, B. F., Schwinberg, P., Scott, S. M., Seader, S. E., Searle, A. C., Sears, B., Seel, S., Seifert, F., Sellers, D., Sengupta, A. S., Shapiro, C. A., Shawhan, P., Shoemaker, D. H., Shu, Q. Z., Sibley, A., Siemens, X., Sievers, L., Sigg, D., Sintes, A. M., Smith, J. R., Smith, M., Smith, M. R., Sneddon, P. H., Spero, R., Spjeld, O., Stapfer, G., Steussy, D., Strain, K. A., Strom, D., Stuver, A., Summerscales, T., Sumner, M. C., Sung, M., Sutton, P. J., Sylvestre, J., Tanner, D. B., Tariq, H., Tarallo, M., Taylor, I., Taylor, R., Taylor, R., Thorne, K. A., Thorne, K. S., Tibbits, M., Tilav, S., Tinto, M., Tokmakov, K. V., Torres, C., Torrie, C., Traylor, G., Tyler, W., Ugolini, D., Ungarelli, C., Vallisneri, M., van Putten, M., Vass, S., Vecchio, A., Veitch, J., Vorvick, C., Vyachanin, S. P., Wallace, L., Walther, H., Ward, H., Ward, R., Ware, B., Watts, K., Webber, D., Weidner, A., Weiland, U., Weinstein, A., Weiss, R., Welling, H., Wen, L., Wen, S., Wette, K., Whelan, J. T., Whitcomb, S. E., Whiting, B. F., Wiley, S., Wilkinson, C., Willems, P. A., Williams, P. R., WILLIAMS, R., Willke, B., Wilson, A., Winjum, B. J., Winkler, W., Wise, S., Wiseman, A. G., Woan, G., Woods, D., Wooley, R., Worden, J., Wu, W., Yakushin, I., Yamamoto, H., Yoshida, S., Zaleski, K. D., Zanolin, M., Zawischa, I., Zhang, L., Zhu, R., Zotov, N., Zucker, M., Zweizig, J., Akutsu, T., Akutsu, T., Ando, M., Arai, K., ARAYA, A., Asada, H., Aso, Y., Beyersdorf, P., Fujiki, Y., Fujimoto, M. K., Fujita, R., Fukushima, M., Futamase, T., Hamuro, Y., Haruyama, T., Hayama, K., Iguchi, H., Iida, Y., Ioka, K., Ishizuka, H., Kamikubota, N., Kanda, N., Kaneyama, T., Karasawa, Y., Kasahara, K., Kasai, T., Katsuki, M., Kawamura, S., Kawamura, M., Kawazoe, F., Kojima, Y., Kokeyama, K., Kondo, K., Kozai, Y., Kudoh, H., Kuroda, K., Kuwabara, T., Matsuda, N., Mio, N., Miura, K., Miyama, S., Miyoki, S., Mizusawa, H., Moriwaki, S., Musha, M., Nagayama, Y., Nakagawa, K., Nakamura, T., Nakano, H., Nakao, K., Nishi, Y., Numata, K., Ogawa, Y., Ohashi, M., Ohishi, N., Okutomi, A., Oohara, K., Otsuka, S., Saito, Y., Sakata, S., Sasaki, M., Sato, N., Sato, S., Sato, Y., Sato, K., Sekido, A., Seto, N., Shibata, M., Shinkai, H., Shintomi, T., Soida, K., Somiya, K., Suzuki, T., Tagoshi, H., Takahashi, H., Takahashi, R., Takamori, A., Takemoto, S., Takeno, K., Tanaka, T., Taniguchi, K., Tanji, T., Tatsumi, D., Telada, S., Tokunari, M., Tomaru, T., Tsubono, K., Tsuda, N., Tsunesada, Y., Uchiyama, T., Ueda, K., Ueda, A., Waseda, K., Yamamoto, A., Yamamoto, K., Yamazaki, T., Yanagi, Y., Yokoyama, J., Yoshida, T., Zhu, Z. H. 2005; 72 (12)

  View details for DOI 10.1103/PhysRevD.72.122004

  View details for Web of Science ID 000234274900008

• Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA Zhang, G. Y., Mann, D., Zhang, L., Javey, A., Li, Y. M., Yenilmez, E., Wang, Q., McVittie, J. P., Nishi, Y., Gibbons, J., Dai, H. J. 2005; 102 (45): 16141-16145

  Abstract

  An oxygen-assisted hydrocarbon chemical vapor deposition method is developed to afford large-scale, highly reproducible, ultra-high-yield growth of vertical single-walled carbon nanotubes (V-SWNTs). It is revealed that reactive hydrogen species, inevitable in hydrocarbon-based growth, are damaging to the formation of sp(2)-like SWNTs in a diameter-dependent manner. The addition of oxygen scavenges H species and provides a powerful control over the C/H ratio to favor SWNT growth. The revelation of the roles played by hydrogen and oxygen leads to a unified and universal optimum-growth condition for SWNTs. Further, a versatile method is developed to form V-SWNT films on any substrate, lifting a major substrate-type limitation for aligned SWNTs.

  View details for DOI 10.1073/pnas.0507064102

  View details for PubMedID 16263931

• Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2 IEEE ELECTRON DEVICE LETTERS Lu, C. H., Wong, G. M., Deal, M. D., Tsai, W., Majhi, P., Chui, C. O., Visokay, M. R., Chambers, J. J., Colombo, L., Clemens, B. M., Nishi, Y. 2005; 26 (7): 445-447

  View details for DOI 10.1109/LED.2005.851232

  View details for Web of Science ID 000230150400007

• An atomic force microscope study of surface roughness of thin silicon films deposited on SiO2 Silicon Nanoelectronics Workshop 2004 Nasrullah, J., Tyler, G. L., Nishi, Y. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2005: 303–11

  View details for DOI 10.1109/TNANO.2005.847007

  View details for Web of Science ID 000229056800002

• Ab initio study of metal gate electrode work function APPLIED PHYSICS LETTERS Park, S., Colombo, L., Nishi, Y., Cho, K. 2005; 86 (7)

  View details for DOI 10.1063/1.1865349

  View details for Web of Science ID 000227439400092

• New constraint for Vth optimization for sub 32nm node CMOS gates scaling IEEE International Electron Devices Meeting Morifuji, E., Kapur, P., Chao, A. K., Nishi, Y. IEEE. 2005: 1049–1052

  View details for Web of Science ID 000236225100240

• Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer IEEE International Electron Devices Meeting Sanda, H., McVittie, J., Koto, M., Yamagata, K., Yonebara, T., Nishi, Y. IEEE. 2005: 695–698

  View details for Web of Science ID 000236225100158

• Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime IEEE International Electron Devices Meeting Uchida, K., Krishnamohan, T., Saraswat, K. C., Nishi, Y. IEEE. 2005: 135–138

  View details for Web of Science ID 000236225100029

• Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT) 25th Symposium on VLSI Technology Krishnamohan, T., Krivokapic, Z., Uchida, K., Nishi, Y., Saraswat, K. C. JAPAN SOCIETY APPLIED PHYSICS. 2005: 82–83

  View details for Web of Science ID 000234973100032

• Edge-defined 90nm TFTs with adjustable V-T in a 3-D compatible process IEEE International SOI Conference Nasrullah, J., BURR, J. B., Tyler, G. L., Nishi, Y. IEEE. 2005: 27–29

  View details for Web of Science ID 000234923200006

• Preferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method NANO LETTERS Li, Y. M., Mann, D., Rolandi, M., Kim, W., Ural, A., Hung, S., Javey, A., Cao, J., Wang, D. W., Yenilmez, E., Wang, Q., Gibbons, J. F., Nishi, Y., Dai, H. J. 2004; 4 (2): 317-321

  View details for DOI 10.1021/nl035097c

  View details for Web of Science ID 000188965700025

• Power optimization of future transistors and a resulting global comparison standard 50th IEEE International Electron Devices Meeting Kapur, P., Shenoy, R. S., Chao, A. K., Nishi, Y., Saraswat, K. C. IEEE. 2004: 415–418

  View details for Web of Science ID 000227158500094

• Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs 50th IEEE International Electron Devices Meeting Uchida, K., Zednik, R., Lu, C. H., Jagannathan, H., McVittie, J., McIntyre, P. C., Nishi, Y. IEEE. 2004: 229–232

  View details for Web of Science ID 000227158500051

• Critical evaluation of the safety of recombinant human growth hormone administration: Statement from the growth hormone research society JOURNAL OF CLINICAL ENDOCRINOLOGY & METABOLISM Christiansen, J. S., Bengtsson, B. A., Thorner, M. O., Hintz, R., Sonksen, P. H., Cohen, P., Clemmons, D., Strasburger, C. J., Carlsson, L., Tanaka, T., ROBINSON, I., Jorgensen, J. O., Johannson, G., Clayton, P. E., Cowell, C. T., Malozowski, S. N., Hankinson, S., Yee, D., Baxter, R., Swerdlow, A., Rosenfeld, R., Fradkin, J. E., Nishi, Y., Monson, J. P., Van den Berghe, G., Carroll, P. V., Takala, J., van der Lely, A. J., Pollak, M. N., LeRoith, D., Tachibana, K., Kappelgaard, A. M., Langbakke, I., Lippe, B., Wilton, P., Stein, P., Salazar, D. E., Maneatis, T., Blethen, S. L., Cutler, G. B., Blum, W. F., Svanberg, E., Gertner, J. M., Shimatsu, A., Takahashi, H. 2001; 86 (5): 1868-1870

  View details for Web of Science ID 000168731600004

  View details for PubMedID 11344173

• Consensus guidelines for the diagnosis and treatment of growth hormone (GH) deficiency in childhood and adolescence: Summary statement of the GH Research Society JOURNAL OF CLINICAL ENDOCRINOLOGY & METABOLISM Israel, E., Attie, K. M., Bengtsson, B. A., Blethen, S. L., Blum, W., Cameron, F., Carel, J. C., Carlsson, L., Chipman, J. J., Christiansen, J. S., Clayton, P., Clemmons, D. R., Cohen, P., Drop, S., Fujieda, K., Ghigo, E., Hintz, R. L., Ho, K., Ilondo, M. M., Jasper, H., Jesussek, B., Kappelgaard, A. M., Laron, Z., Lippe, B. M., Malozowski, S., Mullis, P. E., de Munick-Keizer-Schrama, S., Nishi, Y., Parks, J. S., Phelps, C., Ranke, M., ROBINSON, I., Rosenfeld, R. G., Rose, S., Saenger, P., Saggese, G., Savage, M., Shalet, S., Sizonenko, P. C., Strasburger, C., Tachibana, K., Tanaka, T., Thorner, M. O., Wikland, K. A., Zadik, Z. 2000; 85 (11): 3990-3993

  View details for Web of Science ID 000166992000008

• Analysis of the potential distribution in the channel region of a platinum silicided source drain metal oxide semiconductor field effect transistor APPLIED PHYSICS LETTERS Snyder, J. P., Helms, C. R., Nishi, Y. 1999; 74 (22): 3407-3409

  View details for Web of Science ID 000080474300055

• EXPERIMENTAL INVESTIGATION OF A PTSI SOURCE AND DRAIN FIELD-EMISSION TRANSISTOR APPLIED PHYSICS LETTERS Snyder, J. P., Helms, C. R., Nishi, Y. 1995; 67 (10): 1420-1422

  View details for Web of Science ID A1995RR44000027