Stanford Advisors

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  • Academic
    ysjiang@stanford.edu
    University - Scholar Department: Chemical Engineering Position: Postdoctoral Scholar

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All Publications

  • High-Quality HfO<sub>2</sub> High-<i>K</i> Gate Dielectrics Deposited on Highly Oriented Pyrolytic Graphite via Enhanced Precursor Atomic Layer Seeding ACS APPLIED ELECTRONIC MATERIALS Yin, Y., Huang, C., Chiu, P., Jiang, Y., Hoo, J., Chen, M. 2025; 7 (5): 1943-1952

    View details for DOI 10.1021/acsaelm.4c02224

    View details for Web of Science ID 001435186800001

  • Ferroelastic Domain Switching and Time-Resolved Negative Capacitance in Polar-Axis-Oriented Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Grown by Atomic Layer Epitaxy SMALL Jiang, Y., Lin, W., Shiojiri, M., Yin, Y., Su, Y., Nien, C., Hsu, C., Hou, V., Chang, C., Radu, I., Chen, M. 2024: e2408278

    Abstract

    Ferroelectric properties of Hf0.5Zr0.5O2 are strongly correlated with its crystallographic orientation, with the [001] direction serving as the polar axis. However, the epitaxial growth of highly polar-axis-oriented Hf0.5Zr0.5O2 layers with pronounced ferroelectricity is rarely reported. Here epitaxial (001)-oriented Hf0.5Zr0.5O2 thin films grown by atomic layer epitaxy (ALE) is demonstrated, which achieve a state-of-the-art ferroelectric polarization up to 78.9 µC cm-2. The epitaxial Hf0.5Zr0.5O2 layer experiences a lattice reorientation from (010) to (001) during the wake-up process, as evidenced by plane-view precession electron diffraction. Accordingly, a two-step, 90° ferroelastic domain switching model is proposed to elucidate multiple polarization switching. Furthermore, the observed polarization switching dynamics closely match with the time-resolved negative capacitance, which is quantified as an equivalent high dielectric constant of -170. This study highlights the capability of ALE to precisely control the crystallographic orientation of Hf0.5Zr0.5O2 thin films, providing deep insights into fundamental ferroelectric mechanisms.

    View details for DOI 10.1002/smll.202408278

    View details for Web of Science ID 001377470500001

    View details for PubMedID 39676420

  • Alternating multi-pulse atomic layer deposition for dopant tailoring in sub-10 nm ferroelectric thin films MATERIALS TODAY CHEMISTRY Wang, T., Chuang, C., Mo, C., Jiang, Y., Shyue, J., Shieh, J., Chen, M. 2025; 43

    View details for DOI 10.1016/j.mtchem.2024.102459

    View details for Web of Science ID 001385714900001

  • Robust energy storage density and negative capacitance in antiferroelectric heterostructures grown by atomic layer epitaxy JOURNAL OF MATERIALS CHEMISTRY A Jiang, Y., Chao, Y., Shiojiri, M., Yin, Y., Chen, M. 2024

    View details for DOI 10.1039/d4ta04610b

    View details for Web of Science ID 001319291900001

  • Atomic layer epitaxy of twinned TiN by hydrogen-manipulated tailoring on monolayer ACTA MATERIALIA Jiang, Y., Shiojiri, M., Shyue, J., Chen, M. 2024; 268

    View details for DOI 10.1016/j.actamat.2024.119750

    View details for Web of Science ID 001197983800001

https://orcid.org/0000-0003-2622-2771