Work Experience


  • Engineer, Taiwan Semiconductor Manufacturing Company (March 22, 2021)

    Semiconductor R&D engineer at TSMC with five years of experience in advanced semiconductor test hardware development.

    My work focused on probe card and test interface design, signal and power integrity, and bring-up activity across circuit probing (CP), wafer-level circuit probing (WLCP), and final test (FT) for leading-edge semiconductor products.

    Location

    Hsinchu

All Publications


  • Thermal stability and microstructural evolution of nanotwinned Ag thin films: Downward grain growth and annealing nanotwin formation SURFACE & COATINGS TECHNOLOGY Hao, Y., Chang, L., Ouyang, F. 2026; 532
  • Improvement of thermomigration resistance in lead-free Sn3.5Ag alloys by Ag interlayer JOURNAL OF ALLOYS AND COMPOUNDS Lin, Y., Hao, Y., Ouyang, F. 2020; 847
  • Application of Atmospheric-Pressure-Plasma-Jet Modified Flexible Graphite Sheets in Reduced-Graphene-Oxide/Polyaniline Supercapacitors. Polymers Hao, Y. C., Nurzal, N., Chien, H. H., Liao, C. Y., Kuok, F. H., Yang, C. C., Chen, J. Z., Yu, I. S. 2020; 12 (6)

    Abstract

    In this study, flexible and low-cost graphite sheets modified by atmospheric pressure plasma jet are applied to reduced-graphene-oxide/polyaniline supercapacitors. Surface treatment by atmospheric pressure plasma jet can make the hydrophobic surface of graphite into a hydrophilic surface and improve the adhesion of the screen-printed reduced-graphene-oxide/polyaniline on the graphite sheets. After the fabrication of reduced-graphene-oxide/polyaniline supercapacitors with polyvinyl alcohol/H2SO4 gel electrolyte, pseudo-capacitance and electrical double capacitance can be clearly identified by the measurement of cyclic voltammetry. The fabricated supercapacitor exhibits specific capacitance value of 227.32 F/g and areal capacitance value of 28.37 mF/cm2 with a potential scan rate of 2 mV/s. Meanwhile, the capacitance retention rate can reach 86.9% after 1000-cycle cyclic voltammetry test. A light-emitting diode can be lit by the fabricated reduced-graphene-oxide/polyaniline supercapacitors, which confirms that the supercapacitors function well and can potentially be used in a circuit.

    View details for DOI 10.3390/polym12061228

    View details for PubMedID 32481643

    View details for PubMedCentralID PMC7362246

  • Atmospheric-pressure-plasma-jet processed carbon nanotube (CNT)-reduced graphene oxide (rGO) nanocomposites for gel-electrolyte supercapacitors. RSC advances Kuok, F. H., Chien, H. H., Lee, C. C., Hao, Y. C., Yu, I. S., Hsu, C. C., Cheng, I. C., Chen, J. Z. 2018; 8 (6): 2851-2857

    Abstract

    This study evaluates DC-pulse nitrogen atmospheric-pressure-plasma-jet processed carbon nanotube (CNT)-reduced graphene oxide (rGO) nanocomposites for gel-electrolyte supercapacitor applications. X-ray photoelectron spectroscopy (XPS) indicates decreased oxygen content (mainly, C-O bonding content) after nitrogen APPJ processing owing to the oxidation and vaporization of ethyl cellulose. Nitrogen APPJ processing introduces nitrogen doping and improves the hydrophilicity of the CNT-rGO nanocomposites. Raman analysis indicates that nitrogen APPJ processing introduces defects and/or surface functional groups on the nanocomposites. The processed CNT-rGO nanocomposites on carbon cloth are applied to the electrodes of H2SO4-polyvinyl alcohol (PVA) gel-electrolyte supercapacitors. The best achieved specific (areal) capacitance is 93.1 F g-1 (9.1 mF cm-2) with 15 s APPJ-processed CNT-rGO nanocomposite electrodes, as evaluated by cyclic voltammetry under a potential scan rate of 2 mV s-1. The addition of rGOs in CNTs in the nanoporous electrodes improves the supercapacitor performance.

    View details for DOI 10.1039/c7ra12108c

    View details for PubMedID 35541196

    View details for PubMedCentralID PMC9077538

  • Improved performance of polyaniline/reduced-graphene-oxide supercapacitor using atmospheric-pressure-plasma-jet surface treatment of carbon cloth ELECTROCHIMICA ACTA Chien, H., Liao, C., Hao, Y., Hsu, C., Cheng, I., Yu, I., Chen, J. 2018; 260: 391-399