Zherui Han received his Ph.D. (2024) in Mechanical Engineering from Purdue University, and B.S. (2019) in Energy and Power Engineering from Huazhong University of Science and Technology in China. He is a recipient of Purdue's Ross Fellowship and Bilsland Dissertation Fellowship. He is now a postdoc at Stanford developing multi-scale simulation methods for thermal transport in 2D systems and devices. His prior works include first-principles modeling of phonon dynamics.

Professional Education

  • Ph.D., Purdue University, Mechanical Engineering (2024)
  • B. E., Huazhong University of Science and Technology, Energy and Power Engineering (2019)

Stanford Advisors

  • Eric Pop, Postdoctoral Faculty Sponsor

All Publications

  • First-principles prediction of thermal conductivity of bulk hexagonal boron nitride APPLIED PHYSICS LETTERS Guo, Z., Han, Z., Alkandari, A., Khot, K., Ruan, X. 2024; 124 (16)

    View details for DOI 10.1063/5.0210935

    View details for Web of Science ID 001204074000020

  • Near-field radiation in BAs and BSb dominated by four-phonon scattering PHYSICAL REVIEW B Feng, D., Yang, X., Han, Z., Ruan, X. 2024; 109 (8)
  • Sampling-accelerated prediction of phonon scattering rates for converged thermal conductivity and radiative properties NPJ COMPUTATIONAL MATERIALS Guo, Z., Han, Z., Feng, D., Lin, G., Ruan, X. 2024; 10 (1)
  • Machine Learning Designed and Experimentally Confirmed Enhanced Reflectance in Aperiodic Multilayer Structures ADVANCED OPTICAL MATERIALS Chowdhury, P., Khot, K., Song, J., He, Z., Kortge, D., Han, Z., Bermel, P., Wang, H., Ruan, X. 2024; 12 (4)
  • Predictions and measurements of thermal conductivity of ceramic materials at high temperature PHYSICAL REVIEW B Han, Z., Xiong, Z., Riffe, W. T., Schonfeld, H. B., Segovia, M., Song, J., Wang, H., Xu, X., Hopkins, P. E., Marconnet, A., Ruan, X. 2023; 108 (18)
  • Thermal conductivity of monolayer graphene: Convergent and lower than diamond PHYSICAL REVIEW B Han, Z., Ruan, X. 2023; 108 (12)
  • Fast and accurate machine learning prediction of phonon scattering rates and lattice thermal conductivity NPJ COMPUTATIONAL MATERIALS Guo, Z., Chowdhury, P., Han, Z., Sun, Y., Feng, D., Lin, G., Ruan, X. 2023; 9 (1)
  • Temperature-dependent full spectrum dielectric function of semiconductors from first principles PHYSICAL REVIEW B Han, Z., Lee, C., Song, J., Wang, H., Bermel, P., Ruan, X. 2023; 107 (20)
  • Prediction of hot zone-center optical phonons in laser-irradiated molybdenum disulfide with a semiconductor multitemperature model PHYSICAL REVIEW B Han, Z., Sokalski, P., Shi, L., Ruan, X. 2023; 107 (4)
  • Effects of hot phonons and thermal stress in micro-Raman spectra of molybdenum disulfide APPLIED PHYSICS LETTERS Sokalski, P., Han, Z., Fleming, G., Smith, B., Sullivan, S. E., Huang, R., Ruan, X., Shi, L. 2022; 121 (18)

    View details for DOI 10.1063/5.0122945

    View details for Web of Science ID 000880112000014

  • Abnormal in-plane thermal conductivity anisotropy in bilayer a-phase tellurene INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER Cheng, Y., Yang, X., Han, Z., Wu, W., Luo, X., Ruan, X. 2022; 192
  • Raman Linewidth Contributions from Four-Phonon and Electron-Phonon Interactions in Graphene PHYSICAL REVIEW LETTERS Han, Z., Yang, X., Sullivan, S. E., Feng, T., Shi, L., Li, W., Ruan, X. 2022; 128 (4): 045901


    The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with increasing temperature, which is opposite to measurement results. Here, we explicitly consider four-phonon anharmonicity, phonon renormalization, and electron-phonon coupling, and find all to be important to successfully explain both the G peak frequency shift and linewidths in our suspended graphene sample over a wide temperature range. Four-phonon scattering contributes a prominent linewidth that increases with temperature, while temperature dependence from electron-phonon interactions is found to be reversed above a doping threshold (ℏω_{G}/2, with ω_{G} being the frequency of the G phonon).

    View details for DOI 10.1103/PhysRevLett.128.045901

    View details for Web of Science ID 000754148900009

    View details for PubMedID 35148139

  • FourPhonon: An extension module to ShengBTE for computing four-phonon scattering rates and thermal conductivity COMPUTER PHYSICS COMMUNICATIONS Han, Z., Yang, X., Li, W., Feng, T., Ruan, X. 2022; 270