Zherui Han
Postdoctoral Scholar, Electrical Engineering
Bio
Zherui Han received his Ph.D. (2024) in Mechanical Engineering from Purdue University, and B.S. (2019) in Energy and Power Engineering from Huazhong University of Science and Technology in China. He is a recipient of Purdue's Ross Fellowship and Bilsland Dissertation Fellowship. He is now a postdoc at Stanford developing multi-scale simulation methods for thermal transport in 2D systems and devices. His prior works include first-principles modeling of phonon dynamics.
Professional Education
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Ph.D., Purdue University, Mechanical Engineering (2024)
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B. E., Huazhong University of Science and Technology, Energy and Power Engineering (2019)
All Publications
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First-principles prediction of thermal conductivity of bulk hexagonal boron nitride
APPLIED PHYSICS LETTERS
2024; 124 (16)
View details for DOI 10.1063/5.0210935
View details for Web of Science ID 001204074000020
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Near-field radiation in BAs and BSb dominated by four-phonon scattering
PHYSICAL REVIEW B
2024; 109 (8)
View details for DOI 10.1103/PhysRevB.109.L081409
View details for Web of Science ID 001220513500002
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Sampling-accelerated prediction of phonon scattering rates for converged thermal conductivity and radiative properties
NPJ COMPUTATIONAL MATERIALS
2024; 10 (1)
View details for DOI 10.1038/s41524-024-01215-8
View details for Web of Science ID 001157688800001
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Machine Learning Designed and Experimentally Confirmed Enhanced Reflectance in Aperiodic Multilayer Structures
ADVANCED OPTICAL MATERIALS
2024; 12 (4)
View details for DOI 10.1002/adom.202300610
View details for Web of Science ID 001118007400001
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Predictions and measurements of thermal conductivity of ceramic materials at high temperature
PHYSICAL REVIEW B
2023; 108 (18)
View details for DOI 10.1103/PhysRevB.108.184306
View details for Web of Science ID 001141855300009
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Thermal conductivity of monolayer graphene: Convergent and lower than diamond
PHYSICAL REVIEW B
2023; 108 (12)
View details for DOI 10.1103/PhysRevB.108.L121412
View details for Web of Science ID 001089572400002
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Fast and accurate machine learning prediction of phonon scattering rates and lattice thermal conductivity
NPJ COMPUTATIONAL MATERIALS
2023; 9 (1)
View details for DOI 10.1038/s41524-023-01020-9
View details for Web of Science ID 000999863800001
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Temperature-dependent full spectrum dielectric function of semiconductors from first principles
PHYSICAL REVIEW B
2023; 107 (20)
View details for DOI 10.1103/PhysRevB.107.L201202
View details for Web of Science ID 001055194800005
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Prediction of hot zone-center optical phonons in laser-irradiated molybdenum disulfide with a semiconductor multitemperature model
PHYSICAL REVIEW B
2023; 107 (4)
View details for DOI 10.1103/PhysRevB.107.L041407
View details for Web of Science ID 000961135700001
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Effects of hot phonons and thermal stress in micro-Raman spectra of molybdenum disulfide
APPLIED PHYSICS LETTERS
2022; 121 (18)
View details for DOI 10.1063/5.0122945
View details for Web of Science ID 000880112000014
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Abnormal in-plane thermal conductivity anisotropy in bilayer a-phase tellurene
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER
2022; 192
View details for DOI 10.1016/j.ijheatmasstransfer.2022.122908
View details for Web of Science ID 000799977100003
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Raman Linewidth Contributions from Four-Phonon and Electron-Phonon Interactions in Graphene
PHYSICAL REVIEW LETTERS
2022; 128 (4): 045901
Abstract
The Raman peak position and linewidth provide insight into phonon anharmonicity and electron-phonon interactions in materials. For monolayer graphene, prior first-principles calculations have yielded decreasing linewidth with increasing temperature, which is opposite to measurement results. Here, we explicitly consider four-phonon anharmonicity, phonon renormalization, and electron-phonon coupling, and find all to be important to successfully explain both the G peak frequency shift and linewidths in our suspended graphene sample over a wide temperature range. Four-phonon scattering contributes a prominent linewidth that increases with temperature, while temperature dependence from electron-phonon interactions is found to be reversed above a doping threshold (ℏω_{G}/2, with ω_{G} being the frequency of the G phonon).
View details for DOI 10.1103/PhysRevLett.128.045901
View details for Web of Science ID 000754148900009
View details for PubMedID 35148139
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FourPhonon: An extension module to ShengBTE for computing four-phonon scattering rates and thermal conductivity
COMPUTER PHYSICS COMMUNICATIONS
2022; 270
View details for DOI 10.1016/j.cpc.2021.108179
View details for Web of Science ID 000708648400004