Zongru Li

All Publications

• Microbeam Testing of an ASIC Radiation-Hardened 32-bit RISC-V Microcontroller IEEE TRANSACTIONS ON NUCLEAR SCIENCE Elash, C. J., Peracchi, S., Li, Z., Xing, J., Lu, H., Fung, R., Pastuovic, Z., Drury, R., Martin, G., Chen, L. 2026; 73 (8): 2792-2801

  View details for DOI 10.1109/TNS.2026.3655735

  View details for Web of Science ID 001853152000004

• Design and Testing of a 32-bit Radiation-Tolerant RISC-V Microcontroller at the 22-nm FD SOI Node IEEE TRANSACTIONS ON NUCLEAR SCIENCE Elash, C. J., Li, Z., Xing, J., Ramaswami, D., Lambert, D., Chavez, J., Fung, R., Martin, G., Chen, L. 2026; 73 (4): 1154-1163

  View details for DOI 10.1109/TNS.2025.3632154

  View details for Web of Science ID 001756824900002

• Analysis of Guard Gates on FF SEU Rates at a 12-nm FinFET Node IEEE TRANSACTIONS ON NUCLEAR SCIENCE Elash, C. J., Xing, J., Momen, P., Ramaswami, D., Lambert, D., Lu, H., Li, Z., Wen, S., Fung, R., Chen, L. 2025; 72 (8): 2614-2621

  View details for DOI 10.1109/TNS.2025.3537609

  View details for Web of Science ID 001554455500048

• OscNet: Machine Learning on CMOS Oscillator Networks IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS Cai, W., Li, Z., Lee, T. H. 2025; 72 (7): 908-912

  View details for DOI 10.1109/TCSII.2025.3574181

  View details for Web of Science ID 001522054500008

• OscNet v1.5: Energy Efficient Hopfield Network on CMOS Oscillators for Image Classification Cai, W., Li, Z., Wang, I., Wang, Y., Lee, T. H., IEEE COMPUTER SOC IEEE COMPUTER SOC. 2025: 4792-4800

  View details for DOI 10.1109/ICCVW69036.2025.00497

  View details for Web of Science ID 001740020100497

• Impact of CnRx Structure on Soft Error Rates of Flip-Flop Designs at 22-nm FD SOI Node IEEE TRANSACTIONS ON NUCLEAR SCIENCE Elash, C. J., Li, Z., Jin, C., Chen, L., Wen, S., Fung, R., Xing, J., Shi, S., Yang, Z., Bhuva, B. L. 2023; 70 (8): 1768-1774

  View details for DOI 10.1109/TNS.2023.3263770

  View details for Web of Science ID 001116676600034

• SEU Performance of RHBD Flip-Flops Using Guard Gates at 22-nm FDSOI Technology Node IEEE TRANSACTIONS ON NUCLEAR SCIENCE Li, Z., Elash, C., Xing, J., Jin, C., Chen, L., Wen, S., Fung, R., Shi, S., Yang, Z., Bhuva, B. L. 2023; 70 (8): 1760-1767

  View details for DOI 10.1109/TNS.2023.3284758

  View details for Web of Science ID 001116676600033

• SEU performance of Schmitt-trigger-based flip-flops at the 22-nm FD SOI technology node MICROELECTRONICS RELIABILITY Li, Z., Elash, C., Jin, C., Chen, L., Wen, S., Fung, R., Xing, J., Shi, S., Yang, Z., Bhuva, B. L. 2023; 146

  View details for DOI 10.1016/j.microrel.2023.115033

  View details for Web of Science ID 001013246600001

• Efficacy of Transistor Stacking on Flip-Flop SEU Performance at 22-nm FDSOI Node IEEE TRANSACTIONS ON NUCLEAR SCIENCE Li, Z., Elash, C., Jin, C., Chen, L., Wen, S., Fung, R., Xing, J., Shi, S., Yang, Z., Bhuva, B. L. 2023; 70 (4): 596-602

  View details for DOI 10.1109/TNS.2023.3257744

  View details for Web of Science ID 000975399300041

• Comparison of Total Ionizing Dose Effects in 22-nm and 28-nm FD SOI Technologies ELECTRONICS Li, Z., Elash, C., Jin, C., Chen, L., Xing, J., Yang, Z., Shi, S. 2022; 11 (11)

  View details for DOI 10.3390/electronics11111757

  View details for Web of Science ID 000808690800001

• Efficacy of Transistor Interleaving in DICE Flip-Flops at a 22 nm FD SOI Technology Node APPLIED SCIENCES-BASEL Elash, C. J., Li, Z., Jin, C., Chen, L., Xing, J., Yang, Z., Shi, S. 2022; 12 (9)

  View details for DOI 10.3390/app12094229

  View details for Web of Science ID 000794448600001

• Single Event Effect Evaluation of the Jetson AGX Xavier Module Using Proton Irradiation Hiemstra, D. M., Jin, C., Li, Z., Chen, R., Shi, S., Chen, L., IEEE IEEE. 2020: 31-34

  View details for DOI 10.1109/REDW51883.2020.9325840

  View details for Web of Science ID 000664045300008

• Total Dose Homogeneity of Commercial off the Shelf biCMOS and Bipolar Voltage References at Low Dose Rate Hiemstra, D. M., Shi, S., Li, Z., Chen, L., Kirischian, V., IEEE IEEE. 2019: 11-13

  View details for DOI 10.1109/redw.2019.8906620

  View details for Web of Science ID 000520416900003