Bio


Jerry A. Yang is a PhD student in electrical engineering at Stanford University. He received his BS in electrical engineering from the University of Texas at Austin and MA in Education from Stanford University. He currently works on strain engineering in two-dimensional materials in Prof. Eric Pop's lab. In addition, he works on equity issues in engineering education in Prof. Sheri Sheppard's Designing Education Lab. His research interests span novel materials, devices, and systems for next-generation computing, engineering education research methods, and critical theories in engineering education. He is a student member of the Institute for Electrical and Electronics Engineers (IEEE), Materials Research Society (MRS), and American Society of Engineering Education (ASEE).

Honors & Awards


  • ARCS Fellowship, Achievement Rewards for College Scientists (ARCS) (2024-2025)
  • NSF Graduate Research Fellowship, National Science Foundation (2020-2025)

Professional Affiliations and Activities


  • Student Member, Materials Research Society (2022 - Present)
  • Student Affiliate, American Society of Engineering Education (ASEE) (2018 - Present)
  • Member, Institute of Electrical and Electronics Engineers (IEEE) (2017 - Present)
  • Student Member, National Science Teachers' Association (2017 - 2019)

Education & Certifications


  • MA, Stanford University, Education (2023)
  • BS, University of Texas at Austin, Electrical and Computer Engineering (2020)

Lab Affiliations


All Publications


  • Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides. ACS nano Yang, J. A., Bennett, R. K., Hoang, L., Zhang, Z., Thompson, K. J., Michail, A., Parthenios, J., Papagelis, K., Mannix, A. J., Pop, E. 2024

    Abstract

    Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS2, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well characterized in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe electron transport in monolayer WS2 and MoS2 transistors. This approach experimentally achieves 2* higher on-state current and mobility with 0.3% applied biaxial strain in WS2, the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering in 2D semiconductors for flexible electronics, sensors, integrated circuits, and other optoelectronic applications.

    View details for DOI 10.1021/acsnano.3c08996

    View details for PubMedID 38921699

  • "BARBED-WIRE BOUNDARIES": HIDDEN CURRICULUM, FIRST-GENERATION AND LOW-INCOME ENGINEERING STUDENTS AND INTERNSHIP ACQUISITION JOURNAL OF WOMEN AND MINORITIES IN SCIENCE AND ENGINEERING Yang, J. A., Towles, J. D., Sheppard, S. D., Atwood, S. A. 2024; 30 (5)
  • Today's Grad Students, Tomorrow's Faculty LGBTQIA plus Graduate Student Experiences Navigating the Insider/Outsider Paradox in Engineering QUEERNESS AS DOING IN HIGHER EDUCATION Bakka, B., Jennings, M., Yang, J. A., Cisneros, J., Jourian, T. J., Miller, R. A., Duran, A. 2023: 142-156
  • LGBTQ plus in ECE: Culture and (Non)Visibility IEEE TRANSACTIONS ON EDUCATION Yang, J. A., Sherard, M. K., Julien, C., Borrego, M. 2021; 64 (4): 345-352
  • Resistance and Community-Building in LGBTQ+ Engineering Students Journal of Women and Minorities in Science and Engineering Yang, J. A., Sherard, M. K., Julien, C., Borrego, M. 2021; 27 (4): 1-33
  • Buckled beam mechanical memory using an asymmetric piezoresistor for readout JOURNAL OF MICROMECHANICS AND MICROENGINEERING Lin, J., Shuvra, P., Yang, J. A., McNamara, S., Walsh, K., Alphenaar, B. 2020; 30 (7)