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Jerry Yang
Ph.D. Student in Electrical Engineering, admitted Autumn 2020
Bio
Jerry A. Yang is a PhD student in electrical engineering at Stanford University. He received his BS in electrical engineering from the University of Texas at Austin and MA in Education from Stanford University. He currently works on strain engineering in two-dimensional materials in Prof. Eric Pop's lab. In addition, he works on equity issues in engineering education in Prof. Sheri Sheppard's Designing Education Lab. His research interests span novel materials, devices, and systems for next-generation computing, engineering education research methods, and critical theories in engineering education. He is a student member of the Institute for Electrical and Electronics Engineers (IEEE), Materials Research Society (MRS), and American Society of Engineering Education (ASEE).
Honors & Awards
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ARCS Fellowship, Achievement Rewards for College Scientists (ARCS) (2024-2025)
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NSF Graduate Research Fellowship, National Science Foundation (2020-2025)
Professional Affiliations and Activities
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Student Member, Materials Research Society (2022 - Present)
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Student Affiliate, American Society of Engineering Education (ASEE) (2018 - Present)
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Member, Institute of Electrical and Electronics Engineers (IEEE) (2017 - Present)
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Student Member, National Science Teachers' Association (2017 - 2019)
Education & Certifications
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MA, Stanford University, Education (2023)
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BS, University of Texas at Austin, Electrical and Computer Engineering (2020)
Lab Affiliations
All Publications
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Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides.
ACS nano
2024
Abstract
Strain engineering can modulate the properties of two-dimensional (2D) semiconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS2, a 2D semiconductor, but the effects of biaxial strain on charge transport are not well characterized in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe electron transport in monolayer WS2 and MoS2 transistors. This approach experimentally achieves 2* higher on-state current and mobility with 0.3% applied biaxial strain in WS2, the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering in 2D semiconductors for flexible electronics, sensors, integrated circuits, and other optoelectronic applications.
View details for DOI 10.1021/acsnano.3c08996
View details for PubMedID 38921699
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"BARBED-WIRE BOUNDARIES": HIDDEN CURRICULUM, FIRST-GENERATION AND LOW-INCOME ENGINEERING STUDENTS AND INTERNSHIP ACQUISITION
JOURNAL OF WOMEN AND MINORITIES IN SCIENCE AND ENGINEERING
2024; 30 (5)
View details for Web of Science ID 001223811700002
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Today's Grad Students, Tomorrow's Faculty LGBTQIA plus Graduate Student Experiences Navigating the Insider/Outsider Paradox in Engineering
QUEERNESS AS DOING IN HIGHER EDUCATION
2023: 142-156
View details for Web of Science ID 000956844800013
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LGBTQ plus in ECE: Culture and (Non)Visibility
IEEE TRANSACTIONS ON EDUCATION
2021; 64 (4): 345-352
View details for DOI 10.1109/TE.2021.3057542
View details for Web of Science ID 000711633100006
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Resistance and Community-Building in LGBTQ+ Engineering Students
Journal of Women and Minorities in Science and Engineering
2021; 27 (4): 1-33
View details for DOI 10.1615/JWomenMinorScienEng.2021035089
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Buckled beam mechanical memory using an asymmetric piezoresistor for readout
JOURNAL OF MICROMECHANICS AND MICROENGINEERING
2020; 30 (7)
View details for DOI 10.1088/1361-6439/ab870c
View details for Web of Science ID 000536077400001