School of Engineering
Showing 11-20 of 50 Results
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Hugo Chen
Ph.D. Student in Electrical Engineering, admitted Autumn 2022
BioHugo "Jiun-Yu" Chen is currently pursuing his Ph.D. degree in the Department of Electrical Engineering at Stanford University. He earned his M.S. in Photonics and Optoelectronics from National Taiwan University in 2019 and his B.S. in Materials Science and Engineering from National Dong Hwa University in 2017.
Prior to joining Stanford, Hugo worked as an R&D engineer at Taiwan Semiconductor Manufacturing Company (TSMC) in the High Power Program and Analog Power/RF Specialty Technology from 2019 to 2022. His research experience includes investigating GaN high electron mobility transistors (HEMTs) for high power converter applications, oxide-based thin-film transistors (TFTs) for CMOS inverter applications, and III-V quantum dots molecular beam epitaxy (MBE) material growth.
As the first author, Hugo has published two peer-reviewed journal articles, six conference papers, and one US/KR/TW/CN/DE patent. He is currently advised by Professors H.-S. Philip Wong and Kwabena Boahen, and his research focuses on developing ferroelectric field-effect transistors (FeFETs) for dendritic-centric learning.
In his leisure time, Hugo enjoys biking, playing badminton, and watching dramas. -
Jian Chen
Adjunct Professor, Electrical Engineering
BioRetired executive with 30 years of experience in NOR, 2D NAND and 3D NAND flash memories, in the areas of device physics, process integration, reliability, test & product engineering, memory systems architecture, eco-systems and new business development. With a passion for innovation and practical solutions and teamwork, built multiple teams from ground up including at international sites.
Inventor of >150 US patents and some significant ideals that have been used in over 10 generations of NAND memory chip and systems, such as binary cache for MLC (USP# 5,930,167 ), fast MLC NAND writing method GPW (USP# 6,522,580 and 6,643,188 ), read method to correct cell to cell coupling effect (USP#5,867,429), NAND memory WL air-gap (USP# 7,045,849 ), and highly reliable systems EPWR (USP#8,214,700, 8,386,861 aka EPWR).
Published the paper that coined the term GIDL, and the first paper that identified the physics of the GIDL current as due to band-to-band tunneling.
Google scholar h-index 57.
