Bio


Miller studies optical and optoelectronic devices including quantum wells and photonic nanostructures, especially for information sensing, communication, switching and processing. He also investigates more generally the fundamentals of optics in these applications, with current research including dense optical interconnection to silicon electronics, quantum well optical physics and devices, nanometallic photonics, and fundamental limits in optics.

Academic Appointments


Honors & Awards


  • Honorary Degree, Heriot-Watt University (2003)
  • Honorary Degree, Vrije Universiteit Brussel (1997)
  • Member, National Academy of Sciences (2008)
  • Member, National Academy of Engineering (2010)
  • Fellow, Royal Society (1995)
  • Fellow, Royal Society of Edinburgh (2002)
  • Fellow, IEEE (1995)
  • Fellow, APS (1988)
  • Fellow, OSA (1988)
  • Carnegie Millennium Professorship, Carnegie (2013)
  • Third Millennium Medal, IEEE (2000)
  • International Prize in Optics, International Commission for Optics (1991)
  • Adolph Lomb Medal and the R. W. Wood Prize, OSA (1986)

Boards, Advisory Committees, Professional Organizations


  • Member, National Academy of Sciences (2008 - Present)
  • Member, National Academy of Engineering (2010 - Present)

Professional Education


  • PhD, Heriot-Watt University (1979)

Journal Articles


  • Self-aligning universal beam coupler OPTICS EXPRESS Miller, D. A. 2013; 21 (5): 6360-6370

    Abstract

    We propose a device that can take an arbitrary monochromatic input beam and, automatically and without any calculations, couple it into a single-mode guide or beam. Simple feedback loops from detectors to modulator elements allow the device to adapt to any specific input beam form. Potential applications include automatic compensation for misalignment and defocusing of an input beam, coupling of complex modes or multiple beams from fibers or free space to single-mode guides, and retaining coupling to a moving source. Straightforward extensions allow multiple different overlapping orthogonal input beams to be separated simultaneously to different single-mode guides with no splitting loss in principle. The approach is suitable for implementation in integrated optics platforms that offer elements such as phase shifters, Mach-Zehnder interferometers, grating couplers, and integrated monitoring detectors, and the basic approach is applicable in principle to other types of waves, such as microwaves or acoustics.

    View details for Web of Science ID 000316103300127

    View details for PubMedID 23482206

  • How complicated must an optical component be? JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION Miller, D. A. 2013; 30 (2): 238-251

    Abstract

    We analyze how complicated a linear optical component has to be if it is to perform one of a range of functions. Specifically, we devise an approach to evaluating the number of real parameters that must be specified in the device design or fabrication, based on the singular value decomposition of the linear operator that describes the device. This approach can be used for essentially any linear device, including space-, frequency-, or time-dependent systems, in optics, or in other linear wave problems. We analyze examples including spatial mode converters and various classes of wavelength demultiplexers. We consider limits on the functions that can be performed by simple optical devices, such as thin lenses, mirrors, gratings, modulators, and fixed optical filters, and discuss the potential for greater functionalities using modern nanophotonics.

    View details for Web of Science ID 000314808400012

    View details for PubMedID 23456059

  • All linear optical devices are mode converters OPTICS EXPRESS Miller, D. A. 2012; 20 (21): 23985-23993

    Abstract

    We show that every linear optical component can be completely described as a device that converts one set of orthogonal input modes, one by one, to a matching set of orthogonal output modes. This result holds for any linear optical structure with any specific variation in space and/or time of its structure. There are therefore preferred orthogonal "mode converter" basis sets of input and output functions for describing any linear optical device, in terms of which the device can be described by a simple diagonal operator. This result should help us understand what linear optical devices we can and cannot make. As illustrations, we use this approach to derive a general expression for the alignment tolerance of an efficient mode coupler and to prove that loss-less combining of orthogonal modes is impossible.

    View details for Web of Science ID 000309955100105

    View details for PubMedID 23188365

  • Device Requirements for Optical Interconnects to Silicon Chips PROCEEDINGS OF THE IEEE Miller, D. A. 2009; 97 (7): 1166-1185
  • Design of large scale plasmonic nanoslit arrays for arbitrary mode conversion and demultiplexing. Optics express Wahl, P., Tanemura, T., Vermeulen, N., Van Erps, J., Miller, D. A., Thienpont, H. 2014; 22 (1): 646-660

    Abstract

    We present an iterative design method for the coupling and the mode conversion of arbitrary modes to focused surface plasmons using a large array of aperiodically randomly located slits in a thin metal film. As the distance between the slits is small and the number of slits is large, significant mutual coupling occurs between the slits which makes an accurate computation of the field scattered by the slits difficult. We use an accurate modal source radiator model to efficiently compute the fields in a significantly shorter time compared with three-dimensional (3D) full-field rigorous simulations, so that iterative optimization is efficiently achieved. Since our model accounts for mutual coupling between the slits, the scattering by the slits of both the source wave and the focused surface plasmon can be incorporated in the optimization scheme. We apply this method to the design of various types of couplers for arbitrary fiber modes and a mode demultiplexer that focuses three orthogonal fiber modes to three different foci. Finally, we validate our design results using fully vectorial 3D finite-difference time-domain (FDTD) simulations.

    View details for DOI 10.1364/OE.22.000646

    View details for PubMedID 24515024

  • Surface-Normal Ge/SiGe Asymmetric Fabry-Perot Optical Modulators Fabricated on Silicon Substrates JOURNAL OF LIGHTWAVE TECHNOLOGY Audet, R. M., Edwards, E. H., Balram, K. C., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Fei, E. I., Kamins, T. I., Harris, J. S., Miller, D. A. 2013; 31 (24): 3995-4003
  • Modal Source Radiator Model for Arbitrary Two-Dimensional Arrays of Subwavelength Apertures on Metal Films IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Tanemura, T., Wahl, P., Fan, S., Miller, D. A. 2013; 19 (3)
  • Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths OPTICS EXPRESS Balram, K. C., Audet, R. M., Miller, D. A. 2013; 21 (8): 10228-10233

    Abstract

    We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.

    View details for DOI 10.1364/OE.21.010228

    View details for Web of Science ID 000318151600102

    View details for PubMedID 23609731

  • Energy-per-Bit Limits in Plasmonic Integrated Photodetectors IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Wahl, P., Tanemura, T., Debaes, C., Vermeulen, N., van Erps, J., Miller, D. A., Thienpont, H. 2013; 19 (2)
  • Light emission from strained germanium NATURE PHOTONICS Jain, J. R., Hryciw, A., Baer, T. M., Miller, D. A., Brongersma, M. L., Howe, R. T. 2013; 7 (3): 162-163
  • Highly Tailored Computational Electromagnetics Methods for Nanophotonic Design and Discovery PROCEEDINGS OF THE IEEE Liu, V., Miller, D. A., Fan, S. 2013; 101 (2): 484-493
  • Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon OPTICS EXPRESS Edwards, E. H., Lever, L., Fei, E. T., Kamins, T. I., Ikonic, Z., Harris, J. S., Kelsall, R. W., Miller, D. A. 2013; 21 (1): 867-876

    Abstract

    We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.

    View details for Web of Science ID 000315988100111

    View details for PubMedID 23388980

  • Energy-per-bit and noise limits in plasmonic intergrated photodetectors INTEGRATED OPTICS: PHYSICS AND SIMULATIONS Wahl, P., Tanemura, T., Debaes, C., Vermeulen, N., Van Erps, J., Miller, D. A., Thiempont, H. 2013; 8781

    View details for DOI 10.1117/12.2017841

    View details for Web of Science ID 000323312700019

  • B-CALM: AN OPEN-SOURCE MULTI-GPU-BASED 3D-FDTD WITH MULTI-POLE DISPERSION FOR PLASMONICS PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER Wahl, P., Ly-Gagnon, D., Bebaes, C., Van Erps, J., Vermeulen, N., Miller, D. A., Thienpont, H. 2013; 138: 467-478
  • Establishing optimal wave communication channels automatically J. Lightwave Technol., http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6581883 Miller, D., A. B. 2013; 31: 3987 – 3994

    View details for DOI 10.1109/JLT.2013.2278809

  • Self-configuring universal linear optical component Photon. Res., http://www.opticsinfobase.org/prj/abstract.cfm?URI=prj-1-1-1 Miller, D., A. B. 2013; 1: 1-15

    View details for DOI 10.1364/PRJ.1.000001

  • Reconfigurable add-drop multiplexer for spatial modes Opt. Express,http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-17-20220 Miller, D., A. B. 2013; 21: 20220-20229
  • Separating arbitrary overlapping spatial modes losslessly and without calculations IEEE Photonics Society Summer Topical Meetings, Space Division Multiplexing for Optical Communications Miller, D., A. B. 2013
  • Designing Linear Optical Components Optics in 2013 Special Issue, Optics and Photonics News, http://www.opnmagazine-digital.com/opn/december_2013#pg40 Miller, D., A. B. 2013: 38
  • Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths 2013 IEEE OPTICAL INTERCONNECTS CONFERENCE Balram, K. C., Audet, R. M., Miller, D. A. 2013: 25-26
  • Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators OPTICS EXPRESS Edwards, E. H., Audet, R. M., Fei, E. T., Claussen, S. A., Schaevitz, R. K., Tasyurek, E., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 20 (28): 29164-29173

    Abstract

    We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

    View details for Web of Science ID 000314914500005

    View details for PubMedID 23388742

  • Ultra-compact photonic crystal waveguide spatial mode converter and its connection to the optical diode effect OPTICS EXPRESS Liu, V., Miller, D. A., Fan, S. 2012; 20 (27): 28388-28397

    Abstract

    We design an extremely compact photonic crystal waveguide spatial mode converter which converts the fundamental even mode to the higher order odd mode with nearly 100% efficiency. We adapt a previously developed design and optimization process that allows these types of devices to be designed in a matter of minutes. We also present an extremely compact optical diode device and clarify its general properties and its relation to spatial mode converters. Finally, we connect the results here to a general theory on the complexity of optical designs.

    View details for Web of Science ID 000314911400044

    View details for PubMedID 23263074

  • Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications OPTICAL MATERIALS EXPRESS Claussen, S. A., Balram, K. C., Fei, E. T., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 2 (10): 1336-1342
  • Self-aligned silicon fins in metallic slits as a platform for planar wavelength-selective nanoscale resonant photodetectors OPTICS EXPRESS Balram, K. C., Miller, D. A. 2012; 20 (20): 22735-22742

    Abstract

    We propose and demonstrate a novel nanoscale resonant metal-semiconductor-metal (MSM) photodetector structure based on silicon fins self-aligned to metallic slits. This geometry allows the center wavelength of the photodetector's spectral response to be controlled by the silicon fin width, allowing multiple detectors, each sensitive to a different wavelength, to be fabricated in a single-step process. In addition, the detectors are highly efficient with simulations showing ~67% of the light (? = 800 nm) incident on the silicon fin being absorbed in a region of thickness ~170 nm whereas the absorption length at the same wavelength is ~10 µm. This approach is promising for the development of multispectral imaging sensors and low-capacitance photodetectors for short-range optical interconnects.

    View details for Web of Science ID 000309522400092

    View details for PubMedID 23037424

  • B-CALM: An open-source GPU-based 3D-FDTD with multi-pole dispersion for plasmonics OPTICAL AND QUANTUM ELECTRONICS Wahl, P., Ly-Gagnon, D., Debaes, C., Miller, D. A., Thienpont, H. 2012; 44 (3-5): 285-290
  • A micromachining-based technology for enhancing germanium light emission via tensile strain NATURE PHOTONICS Jain, J. R., Hryciw, A., Baer, T. M., Miller, D. A., Brongersma, M. L., Howe, R. T. 2012; 6 (6): 398-405
  • Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides IEEE PHOTONICS TECHNOLOGY LETTERS Ren, S., Rong, Y., Claussen, S. A., Schaevitz, R. K., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 24 (6): 461-463
  • Energy consumption in optical modulators for interconnects OPTICS EXPRESS Miller, D. A. 2012; 20 (6): A293-A308

    Abstract

    We analyze energy consumption in optical modulators operated in depletion and intended for low-power interconnect applications. We include dynamic dissipation from charging modulator capacitance and net energy consumption from absorption and photocurrent, both in reverse and small forward bias. We show that dynamic dissipation can be independent of static bias, though only with specific kinds of bias circuits. We derive simple expressions for the effects of photocurrent on energy consumption, valid in both reverse and small forward bias. Though electroabsorption modulators with large reverse bias have substantial energy penalties from photocurrent dissipation, we argue that modulator diodes with thin depletion regions and operating in small reverse and/or forward bias could have little or no such photocurrent energy penalty, even conceivably being more energy-efficient than an ideal loss-less modulator.

    View details for Web of Science ID 000301877700016

    View details for PubMedID 22418679

  • Investigation of Limits to the Optical Performance of Asymmetric Fabry-Perot Electroabsorption Modulators IEEE JOURNAL OF QUANTUM ELECTRONICS Audet, R. M., Edwards, E. H., Wahl, P., Miller, D. A. 2012; 48 (2): 198-209
  • Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells IEEE JOURNAL OF QUANTUM ELECTRONICS Schaevitz, R. K., Edwards, E. H., Roth, J. E., Fei, E. T., Rong, Y., Wahl, P., Kamins, T. I., Harris, J. S., Miller, D. A. 2012; 48 (2): 187-197
  • B-CALM: An Open-Source GPU-based 3D-FDTD with Multi-Pole Dispersion for Plasmonics OPTICAL MODELLING AND DESIGN II Wahl, P., Ly-Gagnon, D., Debaes, C., Miller, D. A., Thienpont, H. 2012; 8429

    View details for DOI 10.1117/12.922393

    View details for Web of Science ID 000305507900031

  • Routing and Photodetection in Subwavelength Plasmonic Slot Waveguides Nanophotonics Ly-Gagnon, D., Balram, Krishna, C., White, Justin, S., Wahl, P., Brongersma, Mark, L., Miller, David, A. B. 2012; 1: 9-16
  • Strained germanium thin film membrane on silicon substrate for optoelectronics OPTICS EXPRESS Nam, D., Sukhdeo, D., Roy, A., Balram, K., Cheng, S., Huang, K. C., Yuan, Z., Brongersma, M., Nishi, Y., Miller, D., Saraswat, K. 2011; 19 (27): 25866-25872

    Abstract

    This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.

    View details for Web of Science ID 000301151500004

    View details for PubMedID 22274174

  • Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics OPTICAL MATERIALS EXPRESS Jain, J. R., Ly-Gagnon, D., Balram, K. C., White, J. S., Brongersma, M. L., Miller, D. A., Howe, R. T. 2011; 1 (6): 1121-1126
  • Indirect absorption in germanium quantum wells AIP ADVANCES Schaevitz, R. K., Ly-Gagnon, D. S., Roth, J. E., Edwards, E. H., Miller, D. A. 2011; 1 (3)

    View details for DOI 10.1063/1.3646149

    View details for Web of Science ID 000302139600064

  • Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides IEEE PHOTONICS JOURNAL Ren, S., Kamins, T. I., Miller, D. A. 2011; 3 (4): 739-747
  • Multiple-Wavelength Focusing of Surface Plasmons with a Nonperiodic Nanoslit Coupler NANO LETTERS Tanemura, T., Balram, K. C., Ly-Gagnon, D., Wahl, P., White, J. S., Brongersma, M. L., Miller, D. A. 2011; 11 (7): 2693-2698

    Abstract

    A novel type of multiple-wavelength focusing plasmonic coupler based on a nonperiodic nanoslit array is designed and experimentally demonstrated. An array of nanoslits patterned on a thin metal film is used to couple free-space light into surface plasmon polaritons (SPPs) and simultaneously focus different-wavelength SPPs into arbitrary predefined locations in the two-dimensional plane. We design and fabricate a compact triplexer on a glass substrate with an integrated silicon photodetector. The photocurrent spectra demonstrate that the incident light is effectively coupled to SPPs and routed into three different focal spots depending on the wavelength. The proposed scheme provides a simple method of building wavelength-division multiplexing and spectral filtering elements, integrated with other plasmonic and optoelectronic devices.

    View details for DOI 10.1021/nl200938h

    View details for Web of Science ID 000292849400022

    View details for PubMedID 21627101

  • Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition APPLIED PHYSICS LETTERS Ren, S., Rong, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2011; 98 (15)

    View details for DOI 10.1063/1.3574912

    View details for Web of Science ID 000289580800008

  • Design methodology for compact photonic-crystal-based wavelength division multiplexers OPTICS LETTERS Liu, V., Jiao, Y., Miller, D. A., Fan, S. 2011; 36 (4): 591-593

    Abstract

    We present an extremely compact wavelength division multiplexer design, as well as a general framework for designing and optimizing frequency selective devices embedded in photonic crystals satisfying arbitrary design constraints. Our method is based on the Dirichlet-to-Neumman simulation method and uses low rank updates to the system to efficiently scan through many device designs.

    View details for Web of Science ID 000287395500055

    View details for PubMedID 21326466

  • Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium Quantum Wells With Silicon-on-Insulator Waveguides IEEE Photonics Journal Ren, S., Kamins, T., I., Miller, D., A. B. 2011; 3 (4): 739-747
  • Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells OPTICS EXPRESS Claussen, S. A., Tasyurek, E., Roth, J. E., Miller, D. A. 2010; 18 (25): 25596-25607

    Abstract

    We measure the intervalley scattering time of electrons in the conduction band of Ge quantum wells from the direct ? valley to the indirect L valley to be ~185 fs using a pump-probe setup at 1570 nm. We relate this to the width of the exciton peak seen in the absorption spectra of this material, and show that these quantum wells could be used as a fast saturable absorber with a saturation fluence between 0.11 and 0.27 pJ/?m. We also observe field screening by photogenerated carriers in the material on longer timescales. We model this field screening by incorporating carrier escape from the quantum wells, drift across the intrinsic region, and recovery of the applied voltage through diffusive conduction.

    View details for Web of Science ID 000285749500013

    View details for PubMedID 21164905

  • Optical interconnects to electronic chips APPLIED OPTICS Miller, D. A. 2010; 49 (25): F59-F70

    Abstract

    Optical interconnects are progressively replacing wires at shorter and shorter distances in information processing machines. This paper summarizes the progress toward and prospects for the penetration of optics all the way to the silicon chip.

    View details for Web of Science ID 000281748100028

    View details for PubMedID 20820203

  • The role of optics in computing NATURE PHOTONICS Miller, D. A. 2010; 4 (7): 406-406
  • Are optical transistors the logical next step? NATURE PHOTONICS Miller, D. A. 2010; 4 (1): 3-5
  • Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination JOURNAL OF LIGHTWAVE TECHNOLOGY Chen, R., Fu, J., Miller, D. A., Harris, J. S. 2009; 27 (23): 5451-5460
  • High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration IEEE ELECTRON DEVICE LETTERS Yu, H., Ren, S., Jung, W. S., Okyay, A. K., Miller, D. A., Saraswat, K. C. 2009; 30 (11): 1161-1163
  • Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si APPLIED PHYSICS LETTERS Yu, H., Kim, D., Ren, S., Kobayashi, M., Miller, D. A., Nishi, Y., Saraswat, K. C. 2009; 95 (16)

    View details for DOI 10.1063/1.3254181

    View details for Web of Science ID 000271218200006

  • Electrically controlled modulation in a photonic crystal nanocavity OPTICS EXPRESS Englund, D., Ellis, B., Edwards, E., Sarmiento, T., Harris, J. S., Miller, D. A., Vuckovic, J. 2009; 17 (18): 15409-15419

    Abstract

    We describe a compact modulator based on a photonic crystal nanocavity whose resonance is electrically controlled through an integrated p-i-n junction. The sub-micron size of the nanocavity promises very low capacitance, high bandwidth, and efficient on-chip integration in optical interconnects.

    View details for Web of Science ID 000269781700003

    View details for PubMedID 19724539

  • Modeling of Plasmonic Waveguide Components and Networks JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE Veronis, G., Kocabas, S. E., Miller, D. A., Fan, S. 2009; 6 (8): 1808-1826
  • Low capacitance CMOS silicon photodetectors for optical clock injection APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING Latif, S., Kocabas, S. E., Tang, L., Debaes, C., Miller, D. A. 2009; 95 (4): 1129-1135
  • Metal-dielectric-metal plasmonic waveguide devices for manipulating light at the nanoscale CHINESE OPTICS LETTERS Veronis, G., Yu, Z., Kocabas, S. E., Miller, D. A., Brongersma, M. L., Fang, S. 2009; 7 (4): 302-308
  • Metallic nanodevices for chip-scale optical interconnects JOURNAL OF NANOPHOTONICS Tang, L., Miller, D. A. 2009; 3

    View details for DOI 10.1117/1.3111849

    View details for Web of Science ID 000272413400001

  • High Efficiency Monolithic Photodetectors for Integrated Optoelectronics in the Near Infrared 2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2 Okyay, A. K., Onbasli, M. C., Ercan, B., Yu, H., Ren, S., Miller, D. A., Saraswat, K. C., Nayfeh, A. M. 2009: 303-304
  • Modal analysis and coupling in metal-insulator-metal waveguides PHYSICAL REVIEW B Kocabas, S. E., Veronis, G., Miller, D. A., Fan, S. 2009; 79 (3)
  • Plasmonic device in silicon CMOS Electronics Lett. Tang, L., Latif, S., Miller, D., A. B. 2009; 45: 706-708
  • Characteristic Impedance Model for Plasmonic Metal Slot Waveguides IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Ly-Gagnon, D., Kocabas, S. E., Miller, D. A. 2008; 14 (6): 1473-1478
  • Transmission Line and Equivalent Circuit Models for Plasmonic Waveguide Components IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Kocabas, S. E., Veronis, G., Miller, D. A., Fan, S. 2008; 14 (6): 1462-1472
  • Optical spatial quantization for higher performance analog-to-digital conversion IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES Jarrahi, M., Fabian, R., Pease, W., Miller, D. A., Lee, T. H. 2008; 56 (9): 2143-2150
  • Material properties of Si-Ge/Ge quantum wells IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Schaevitz, R. K., Roth, J. E., Ren, S., Fidaner, O., Miller, D. A. 2008; 14 (4): 1082-1089
  • Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna NATURE PHOTONICS Tang, L., Kocabas, S. E., Latif, S., Okyay, A. K., Ly-Gagnon, D., Saraswat, K. C., Miller, D. A. 2008; 2 (4): 226-229
  • Wideband, low driving voltage traveling-wave Mach-Zehnder modulator for RF photonics IEEE PHOTONICS TECHNOLOGY LETTERS Jarrahi, M., Lee, T. H., Miller, D. A. 2008; 20 (5-8): 517-519
  • Optical switching based on high-speed phased array optical beam steering APPLIED PHYSICS LETTERS Jarrahi, M., Fabian, R., Pease, W., Miller, D. A., Lee, T. H. 2008; 92 (1)

    View details for DOI 10.1063/1.2831005

    View details for Web of Science ID 000252284200192

  • C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing ELECTRONICS LETTERS Roth, J. E., Fidaner, O., Edwards, E. H., Schaevitz, R. K., Kuo, Y., Helman, N. C., Kamins, T. I., Harris, J. S., Miller, D. A. 2008; 44 (1): 49-U63
  • Integrated Photodetectors in Metal Slot Plasmonic Waveguides Plasmonics and Metamaterials (META) 2008, OSA Fall Optics and Photonics Congress Ly-Gagnon, D., S., Kocabas, S., E., Miller, D., A. B. 2008
  • Silicon germanium CMOS optoelectronic switching device: Bringing light to latch IEEE TRANSACTIONS ON ELECTRON DEVICES Okyay, A. K., Kuzum, D., Latif, S., Miller, D. A., Saraswat, K. C. 2007; 54 (12): 3252-3259
  • An optical interconnect transceiver at 1550 nm using low-voltage electroabsorption modulators directly integrated to CMOS JOURNAL OF LIGHTWAVE TECHNOLOGY Roth, J. E., Palermo, S., Helman, N. C., Bour, D. P., Miller, D. A., Horowitz, M. 2007; 25 (12): 3739-3747
  • Fundamental limit to linear one-dimensional slow light structures PHYSICAL REVIEW LETTERS Miller, D. A. 2007; 99 (20)

    Abstract

    Using a new general approach to limits in optical structures that counts orthogonal waves generated by scattering, we derive an upper limit to the number of bits of delay possible in one-dimensional slow light structures that are based on linear optical response to the signal field. The limit is essentially the product of the length of the structure in wavelengths and the largest relative change in dielectric constant anywhere in the structure at any frequency of interest. It holds for refractive index, absorption, or gain variations with arbitrary spectral or spatial form. It is otherwise completely independent of the details of the structure's design, and does not rely on concepts of group velocity or group delay.

    View details for DOI 10.1103/PhysRevLett.99.203903

    View details for Web of Science ID 000251003600020

    View details for PubMedID 18233141

  • Fundamental limit for optical components JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS Miller, D. A. 2007; 24 (10): A1-A18
  • Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared IEEE PHOTONICS TECHNOLOGY LETTERS Fidaner, O., Okyay, A. K., Roth, J. E., Schaevitz, R. K., Kuo, Y., Saraswat, K. C., Harris, J. S., Miller, D. A. 2007; 19 (17-20): 1631-1633
  • Germanium quantum wells for high-performance modulators in silicon photonics PHOTONICS SPECTRA Miller, D. A. 2007; 41 (9): 80-83
  • SiGe optoelectronic metal-oxide semiconductor field-effect transistor OPTICS LETTERS Okyay, A. K., Pethe, A. J., Kuzum, D., Latif, S., Miller, D. A., Saraswat, K. C. 2007; 32 (14): 2022-2024

    Abstract

    We propose a novel semiconductor optoelectronic switch that is a fusion of a Ge optical detector and a Si metal-oxide semiconductor field-effect transistor (MOSFET). The device operation is investigated with simulations and experiments. The switch can be fabricated at the nanoscale with extremely low capacitance. This device operates in telecommunication standard wavelengths, hence providing the surrounding Si circuitry with noise immunity from signaling. The Ge gate absorbs light, and the gate photocurrent is amplified at the drain terminal. Experimental current gain of up to 1000x is demonstrated. The device exhibits increased responsivity (approximately 3.5x) and lower off-state current (approximately 4x) compared with traditional detector schemes.

    View details for Web of Science ID 000248669200022

    View details for PubMedID 17632630

  • Optical modulator on silicon employing germanium quantum wells OPTICS EXPRESS Roth, J. E., Fidaner, O., Schaevitz, R. K., Kuo, Y., Kamins, T. I., Harris, J. S., Miller, D. A. 2007; 15 (9): 5851-5859

    Abstract

    We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm. The novel side-entry structure employs an asymmetric Fabry-Perot resonator at oblique incidence. Unlike waveguide modulators, the design is insensitive to positional misalignment, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions. Since the optical ports are on the substrate edges, the wafer top and bottom are left free for electrical interconnections and thermal management.

    View details for Web of Science ID 000246395000064

    View details for PubMedID 19532843

  • Femtosecond carrier dynamics in Ge/SiGe quantum wells 2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS Claussen, S., Tang, L., Roth, J., Fidaner, O., Latif, S., Miller, D. A. 2007: 187-189
  • Fundamental Limit to Delay-Bandwidth Product in One-Dimensional Linear Optical Structures Slow Light and Fast Light Topical Meeting Miller, D, A. B. 2007
  • The Fundamental Limit to Optical Components Optics and Photonics News Miller, David, A. B. 2007: 27
  • How to become invisible SPIE Newsroom, March 2007 http://newsroom.spie.org/x5923.xml?highlight=x535 Miller, D., A. B. 2007
  • On perfect cloaking OPTICS EXPRESS Miller, D. A. 2006; 14 (25): 12457-12466

    Abstract

    We show in principle how to cloak a region of space to make its contents classically invisible or transparent to waves. The method uses sensors and active sources near the surface of the region, and could operate over broad bandwidths. A general expression is given for calculating the necessary sources, and explicit, fully causal simulations are shown for scalar waves. Vulnerability to broad-band probing is discussed, and any active scheme should detectable by a quantum probe, regardless of bandwidth.

    View details for Web of Science ID 000242964300065

    View details for PubMedID 19529679

  • Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Kuo, Y., Lee, Y. K., Ge, Y., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2006; 12 (6): 1503-1513
  • Optoelectronic switches based on diffusive conduction JOURNAL OF APPLIED PHYSICS Demir, H. V., Koklu, F. H., Yairi, M. B., Harris, J. S., Miller, D. A. 2006; 100 (4)

    View details for DOI 10.1063/1.2234818

    View details for Web of Science ID 000240236800008

  • Temporal and spectral nonspecularities in reflection at surface plasmon resonance APPLIED PHYSICS LETTERS Yin, X., Hesselink, L., Chin, H., Miller, D. A. 2006; 89 (4)

    View details for DOI 10.1063/1.2233622

    View details for Web of Science ID 000239376500002

  • C-shaped nanoaperture-enhanced germanium photodetector OPTICS LETTERS Tang, L., Miller, D. A., Okyay, A. K., Matteo, J. A., Yuen, Y., Saraswat, K. C., Hesselink, L. 2006; 31 (10): 1519-1521

    Abstract

    We present a C-shaped nanoaperture-enhanced Ge photodetector that shows 2-5 times the photocurrent enhancement over that from a square aperture of the same area at 1310 nm wavelength. We demonstrate the polarization dependence of the C-aperture photodetector over a wide wavelength range. Our experimental observation agrees well with finite-difference time-domain simulation results.

    View details for Web of Science ID 000237431600052

    View details for PubMedID 16642158

  • Self-aligned via and trench for metal contact in III-V semiconductor devices JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B Zheng, J. F., Demir, H. V., Sabnis, V. A., Fidaner, O., Harris, J. S., Miller, D. A. 2006; 24 (3): 1117-1122

    View details for DOI 10.1116/1.2188000

    View details for Web of Science ID 000238790000007

  • Integrated photonic switches for nanosecond packet-switched optical wavelength conversion OPTICS EXPRESS Fidaner, O., Demir, H. V., Sabnis, V. A., Zheng, J. F., Harris, J. S., Miller, D. A. 2006; 14 (1): 361-368

    Abstract

    We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations to allow for different optical network functions on a single chip. Here we experimentally demonstrate GHz-range optical wavelength-converting switching with only ~10 mW of absorbed input optical power, electronically controlled packet switching with a reconfiguration time of <2.5 ns, and optically controlled packet switching in <300 ps.

    View details for Web of Science ID 000234538800040

    View details for PubMedID 19503349

  • C-shaped Nano-Aperture-Enhanced Germanium Photodetector in Integrated Photonics Research and Applications/Nanophotonics, Technical Digest (CD) (Optical Society of America, 2006) Tang, L., Miller, D., A., Okyay, A., K., Matteo, J., A., Yuen, Y., Saraswat, K., C. 2006
  • Self-aligned via and trench for metal contact in III-V semiconductor deivces J. Vac. SCi. Technol. B Zheng, J., F., Demir, H., V., Sabnis, V., A., Fidaner, O., Harris, J., S., Miller, D., A. B. 2006; 24: 1117-1122
  • Systematic photonic crystal device design: global and local optimization and sensitivity analysis IEEE J. Quantum Electron. Jiao, Y., Fan, S., Miller, D., A. B. 2006; 42 (3): 266 – 279
  • Photonic crystals: Straightening out light Nature Materials Miller, D., A. B. 2006; 5: 83–84

    View details for DOI 10.1038/nmat1566

  • Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon SiGe Technology and Device Meeting Harris, J., S., Kuo, Y., H., Miller, D., A. B. 2006
  • Limit to the Performance of Optical Components in Photonic Metamaterials: From Random to Periodic, Technical Digest (CD) (Optical Society of America, 2006) Miller, D., A. B. 2006
  • Intimate monolithic integration of chip-scale photonic circuits IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Sabnis, V. A., Demir, H. V., Fidaner, O., Zheng, J. F., Harris, J. S., Miller, D. A., Li, N., Wu, T. C., Chen, H. T., Houng, Y. M. 2005; 11 (6): 1255-1265
  • Strong quantum-confined Stark effect in germanium quantum-well structures on silicon NATURE Kuo, Y. H., Lee, Y. K., Ge, Y. S., Ren, S., Roth, J. E., Kamins, T. I., Miller, D. A., Harris, J. S. 2005; 437 (7063): 1334-1336

    Abstract

    Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.

    View details for DOI 10.1038/nature04204

    View details for Web of Science ID 000232829100048

    View details for PubMedID 16251959

  • Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Helman, N. C., Roth, J. E., Bour, D. P., Altug, H., Miller, D. A. 2005; 11 (2): 338-342
  • Self-aligning planarization and passivation for integration applications in III-V semiconductor devices IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING Demir, H. V., Zheng, J. F., Sabnis, V. A., Fidaner, O., Hanberg, J., Harris, J. S., Miller, D. A. 2005; 18 (1): 182-189
  • Novel Electrically Controlled Rapidly Wavelength Selective Photodetection Using MSMs IEEE J. Selected Topics in Quantum Electronics Chen, R., Miller, D., A. B., Ma, K., Harris Jr., J., S. 2005; 11 (1): 184-9
  • MSM-based integrated CMOS wavelength-tunable optical receiver IEEE Photonics Technology Letters Chen, R., Chin, H., Miller, D., A. B., Ma, K., Harris, J., S. 2005; 17 (6): 1271-3
  • A Single Transverse-Mode Monolithically Integrated Long Vertical-Cavity Surface-Emitting Laser IEEE Photonics Technology Letters Wiemer, M., W., Aldaz, R., I., Miller, D., A. B., Harris, J., S. 2005; 17: 1366 – 1368
  • Silicon-Based Micro-Fourier Spectrometer IEEE Trans. on Electron Devices Knipp, D., Stiebig, H., Bhalotra, Sameer, R., Bunte, E., Kung, Helen, L., Miller, David, A. B. 2005; 3 (52): 419‑426
  • Intimate monolithic integration of chip-scale photonic circuits IEEE J. Sel. Top. Quantum Electron. Sabnis, V., A., Demir, H., V., Fidaner, O., Zheng, J., Harris Jr., J., S., Miller, D., A. B. 2005; 11 (6): 1244 - 1256
  • The Relationship between the Superprism Effect in One-Dimensional Photonic Crystals and Spatial Dispersion in Non-Periodic Thin-Film Stacks Optics Lett., selected for the October 10, 2005 issue of Virtual Journal of Nanoscale Science & Technology Gerken, M., Miller, David, A. B. 2005; 30 (18): 2475-7
  • Photonic Crystal Device Sensitivity Analysis with Wannier Basis Gradients Optics Letters Jiao, Y., Fan, S., Miller, David, A. B. 2005; 3 (30): 302 – 304
  • Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits IEEE J. Sel. Top. Quantum Electron. Ma, K., Chen, R., Miller, D., A. B., Harris Jr., J., S. 2005; 11 (6): 1278 – 1283
  • Multifunctional integrated photonic switches IEEE J. Selected Topics in Quantum Electronics Demir, H., V., Sabnis, V., A., Fidaner, O., Zheng, J., F., Harris Jr., J., S., Miller, D., A. B. 2005; 11 (1): 86 – 98
  • Misalignment-Tolerant Surface-Normal Low-Voltage Modulator for Optical Interconnects IEEE J. Selected Topics in Quantum Electronics Helman, Noah, C., Roth, Jonathan, E., Bour, David, P., Altug, H., Miller, David, A. B. 2005; 11 (2): 338 - 342
  • Limits to the performance of dispersive thin-film stacks Applied Optics Gerken, M., Miller, David, A. B. 2005; 44 (18): 3349 – 3357
  • Demonstration of Systematic Photonic Crystal Device Design and Optimization By Low Rank Adjustments: an Extremely Compact Mode Separator Optics Letters Jiao, Y., Fan, S., Miller, David, A. B. 2005; 30 (2): 141-143
  • Multifunctional integrated photonic switches IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Demir, H. V., Sabnis, V. A., Fidaner, O., Zheng, J. F., Harris, J. S., Miller, D. A. 2005; 11 (1): 86-96
  • Wannier Basis Design and Optimization of a Photonic Crystal Waveguide Crossing IEEE Photonics Technology Letters Jiao, Y., Mingaleev, Sergei, F., Schillinger, M., Miller, David, A. B., Fan, S., Busch, K. 2005; 17 (9): 1875-7
  • Spectral Shaping of Electrically Controlled MSM-Based Tunable Photodetectors IEEE Photonics Technology Letters Chen, R., Fu, J., Miller, D., A. B., Harris Jr., J., S. 2005; 17: 2158-60
  • Photonic Crystal Device Optimization Without Increasing Fabrication Tolerances: A Mode Demultiplexer Design in Integrated Photonics Research and Applications/Nanophotonics for Information Systems, Technical Digest (Optical Society of America, 2005) Jiao, Y., Fan, S., Miller, D., A. B. 2005
  • Multifunctional Integrated Photonic Switches for Nanosecond Packet-Switched Wavelength Conversion in Integrated Photonics Research and Applications/Nanophotonics for Information Systems, Technical Digest (Optical Society of America, 2005) Fidaner, O., Demir, H., V., Sabnis, V., A., Harris, J., S., Miller, D., A. B., Zheng, J., F. 2005
  • Scalable wavelength-converting crossbar switches IEEE PHOTONICS TECHNOLOGY LETTERS Demir, H. V., Sabnis, V. A., Zheng, J. F., Fidaner, O., Harris, J. S., Miller, D. A. 2004; 16 (10): 2305-2307
  • Pump-probe measurements of CMOS detector rise time in the blue JOURNAL OF LIGHTWAVE TECHNOLOGY Bhatnagar, A., Latif, S., Debaes, C., Miller, D. A. 2004; 22 (9): 2213-2217
  • High-speed optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control JOURNAL OF APPLIED PHYSICS Sabnis, V. A., Demir, H. V., Yairi, M. B., Harris, J. S., Miller, D. A. 2004; 95 (5): 2258-2263

    View details for DOI 10.1063/1.1643789

    View details for Web of Science ID 000189139600009

  • Large-signal response of p-i-n photodetectors using short pulses with small spot sizes IEEE JOURNAL OF QUANTUM ELECTRONICS Yairi, M. B., Demir, H. V., Atanackovic, P. B., Miller, D. A. 2004; 40 (2): 143-151
  • Optically controlled electroabsorption modulators for unconstrained wavelength conversion APPLIED PHYSICS LETTERS Sabnis, V. A., Demir, H. V., Fidaner, O., Harris, J. S., Miller, D. A., Zheng, J. F., Li, N., Wu, T. C., Chen, H. T., Houng, Y. M. 2004; 84 (4): 469-471

    View details for DOI 10.1063/1.1643539

    View details for Web of Science ID 000188316500005

  • Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting OPTICS EXPRESS Demir, H. V., Sabnis, V. A., Fidaner, O., Harris, J. S., Miller, D. A., Zheng, J. F. 2004; 12 (2): 310-316

    Abstract

    We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.

    View details for Web of Science ID 000188383200011

    View details for PubMedID 19471539

  • Receiverless detection schemes for optical clock distribution QUANTUM SENSING AND NANOPHOTONIC DEVICES Bhatnagar, A., Debaes, C., Thienpont, H., Miller, D. A. 2004; 5359: 352-359

    View details for DOI 10.1117/12.518316

    View details for Web of Science ID 000223199200035

  • Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate Optics Express Aldaz, R., I., Wiemer, M., W., Miller, D., A. B., Harris, J., S. 2004; 12 (17): 3967-3971
  • Scalable wavelength-converting crossbar switches IEEE Photonics Technology Letters Demir, H., V., Sabnis, V., A., Zheng, J., Fidaner, O., Harris Jr., J., S., Miller, D., A. B. 2004; 16 (10): 2305-7
  • Optically-controlled electroabsorption modulators for unconstrained wavelength conversion Appl. Phys. Lett Sabnis, V., A., Demir, H., V., Fidaner, O., Harris Jr., J., S., Miller, D., A. B., Zheng, J., F. 2004; 84: 469-471
  • Multilayer Thin-Film Stacks With Steplike Spatial Beam Shifting J. Lightwave Technol. Gerken, M., Miller, David, A. B. 2004; 22: 612 – 618
  • Multilayer thin-film coatings for optical communication systems OSA Topical Meeting on Optical Interference Coatings 2004 Gerken, M., Miller, D., A. B. 2004
  • Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches IEEE Journal of Quantum Electronics Ma, K., Urata, R., Miller, D., A. B., Harris Jr., J., S. 2004; 40 (6): 800 – 804, 800-4
  • Electrically-reconfigurable integrated photonic switches 2004 IEEE Lasers and Electro-Optics Society Annual Meeting Fidaner, O., Demir, H. V., Sabnis, Vijit, A., Harris Jr., James, S., Miller, David, A. B., Zheng, J. 2004
  • Designing for beam propagation in periodic and nonperiodic photonic nanostructures: Extended Hamiltonian method Phys. Rev E Jiao, Y., Fan, S., H., Miller, D., A. B. 2004; 70 (3): 0. 036612
  • Optical interconnection and clocking for electronic chips 8TH WORLD MULTI-CONFERENCE ON SYSTEMICS, CYBERNETICS AND INFORMATICS, VOL XII, PROCEEDINGS BHATNAGAR, A., Miller, D. A. 2004: 177-181
  • Electrically-reconfigurable integrated photonic switches 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Fidaner, O., Demir, H. V., Sabnis, V. A., Harris, J. S., Miller, D. A., Zheng, J. F. 2004: 455-456
  • Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Helman, N. C., Roth, J. E., Altug, H., Miller, D. A., Bour, D. P. 2004: 461-462
  • Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS JOURNAL OF LIGHTWAVE TECHNOLOGY Urata, R., Nathawad, L. Y., Takahashi, R., Ma, K., Miller, D. A., Wooley, B. A., Harris, J. S. 2003; 21 (12): 3104-3115
  • Adaptive imaging spectrometer in a time-domain filtering architecture OPTICS EXPRESS Jiao, Y., Bhalotra, S. R., Kung, H. L., Miller, D. A. 2003; 11 (17): 1960-1965
  • Adaptive imaging spectrometer in a time-domain filtering architecturedaptive Imaging Spectrometer in a Time-Domain Filtering Architecture. Optics express Jiao, Y., Bhalotra, S., Kung, H., Miller, D. 2003; 11 (17): 1960-1965

    Abstract

    We demonstrate an imaging spectrometer with 30nm resolution that utilizes a novel time-domain filtering architecture. The architecture is based on a pixel by pixel integration of the interferogram signal mixed with reference waveforms. The system can be adapted in real time to discriminate between LED sources of different wavelengths, perform signal processing on the spectra, as well as discriminate between highly overlapping, broadband spectral features in a scene illuminated by a tungsten lamp. Unlike a conventional spectral signature discrimination system, which needs a dedicated computation subsystem running a discrimination algorithm, the time-domain filtering architecture embeds much of the computation in the filtering, which will aid the design of integrated miniaturized spectral signature discrimination systems.

    View details for PubMedID 19466081

  • Latency reduction in optical interconnects using short optical pulses IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Agarwal, D., Keeler, G. A., Debaes, C., Nelson, B. E., Helman, N. C., Miller, D. A. 2003; 9 (2): 410-418
  • Wavelength division multiplexed optical interconnect using short pulses IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Nelson, B. E., Keeler, G. A., Agarwal, D., Helman, N. C., Miller, D. A. 2003; 9 (2): 486-491
  • Receiver-less optical clock injection for clock distribution networks IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Debaes, C., BHATNAGAR, A., Agarwal, D., Chen, R., Keeler, G. A., Helman, N. C., Thienpont, H., Miller, D. A. 2003; 9 (2): 400-409
  • The benefits of ultrashort optical pulses in optically interconnected systems IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS Keeler, G. A., Nelson, B. E., Agarwal, D., Debaes, C., Helman, N. C., BHATNAGAR, A., Miller, D. A. 2003; 9 (2): 477-485
  • Novel optically-controlled optical switch based on intimate integration of surface-normal photodiode and waveguide electroabsorption modulator for wavelength conversion 2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Demir, H. V., Sabnis, V. A., Fidaner, O., Latif, S., Harris, J. S., Miller, D. A., Zheng, J. F., Li, N., Wu, T. C., Houng, Y. M. 2003: 644-645
  • A 40-GHz-Bandwidth, 4-Bit, Time-Interleaved A/D Converter Using Photoconductive Sampling IEEE J. Solid-State Circuits Nathawad, L., Y., Urata, R., Wooley, B., A., Miller, D., A. B. 2003; 38: 2021 – 2030
  • A 20GHz bandwidth, 4b photoconductive-sampling time-interleaved CMOS ADC 2003 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE: DIGEST OF TECHNICAL PAPERS Nathawad, L. Y., Urata, R., Wooley, B. A., Miller, D. A. 2003; 46: 320-?
  • Wavelength demultiplexer using the spatial dispersion of multilayer thin-film structures IEEE Photonics Technol. Lett. Gerken, M., Miller, David, A. B. 2003; 15: 1097-1099
  • Ultrafast Optoelectronics Sample and Hold using Low-Temperature-Grown GaAs MSM IEEE Photonics Technol. Lett. Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris Jr., J., S. 2003; 15: 724 – 726
  • The Benefits of Ultrashort Optical Pulses in Optically-Interconnected Systems IEEE J. Sel. Top. Quantum Electron. Keeler, G., A., Nelson, B., E., Agarwal, D., Debaes, C., Helman, N., C., Bhatnagar, A., Miller, David, A.B 2003; 9: 477-485
  • Multilayer Thin-Film Structures with High Spatial Dispersion Applied Optics Gerken, M., Miller, David, A. B. 2003; 42: 1330 – 1345
  • Optical pump-probe measurements of the latency of silicon CMOS optical interconnects IEEE PHOTONICS TECHNOLOGY LETTERS Keeler, G. A., Agarwal, D., Debaes, C., Nelson, B. E., Helman, N. C., Thienpont, H., Miller, D. A. 2002; 14 (8): 1214-1216
  • Adaptive time-domain filtering for real-time spectral discrimination in a Michelson interferometer OPTICS LETTERS Bhalotra, S. R., Kung, H. L., Jiao, Y., Miller, D. A. 2002; 27 (13): 1147-1149

    Abstract

    We present a method of spectral discrimination that employs time-domain processing instead of the typical frequency-domain analysis and implement the method in a Michelson interferometer with a nonlinear mirror scan. The technique yields one analog output value per scan instead of a complete interferogram by directly filtering a measured scan with a reference function in the time domain. Such a procedure drastically reduces data-processing requirements downstream. Additionally, using prerecorded interferograms as references eliminates the need to compensate for scan nonlinearities, which broadens the field of usable components for implementation in miniaturized sensing systems. With our efficient use of known spectral signatures, we demonstrate real-time discrimination of 633- and 663-nm laser sources with a mirror scan length of 1 microm , compared with the Rayleigh criterion of 7 microm.

    View details for Web of Science ID 000176623100019

    View details for PubMedID 18026389

  • Equivalence of diffusive conduction and giant ambipolar diffusion JOURNAL OF APPLIED PHYSICS Yairi, M. B., Miller, D. A. 2002; 91 (7): 4374-4381

    View details for DOI 10.1063/1.1453508

    View details for Web of Science ID 000174663900063

  • High-impedance high-frequency silicon detector response for precise receiverless optical clock injection SILICON-BASED AND HYBRID OPTOELECTRONICS IV Debaes, C., Agarwal, D., BHATNAGAR, A., Thienpont, H., Miller, D. A. 2002; 4654: 78-88
  • Large-signal response of high speed p-i-n photodetectors to short pulses with small spot sizes in CLEO 2002 Demir, H., V., Yairi, M., B., Atanackovic, P., Miller, D., A. B. 2002
  • Wide bandwidth, large, and tunable polarization mode dispersion in multilayered omnidirectional reflectors Appl. Phys. Lett. Wang, Z., Miller, David, A. B., Fan, S. 2002; 81: 187-189
  • Standing-Wave Transform Spectrometer Based on Integrated MEMS Mirror and Thin-Film Photodetector IEEE J. Selected Topics Quantum Electron. Kung, H., L., Bhalotra, S., R., Mansell, J., D., Miller, D., A. B., Harris Jr., J., S. 2002; 8: 98 – 105
  • Integrated standing-wave transform spectrometer for near infr ared optical analysis in IEEE Lasers and Electro-Optics Society 2002 Annual Meeting Bhalotra, S., R., Kung, H., L., Fu, J., Helman, N., C., Levi, O., Miller, D., A. B. 2002
  • Differential optical remoting of ultrafast charge packets using self-linearized modulation 2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 Chin, H., Keeler, G. A., Helman, N. C., Wistey, M., Miller, D. A., Harris, J. S. 2002: 467-468
  • Spatiotemporal control of ultrashort optical pulses by refractive-diffractive-dispersive structured optical elements OPTICS LETTERS Piestun, R., Miller, D. A. 2001; 26 (17): 1373-1375

    Abstract

    Structured optical elements that control the spatial and temporal characteristics of femtosecond light pulses are analyzed and synthesized. We show that unique spatiotemporal effects can be attained based on the diffraction, refraction, and dispersive effects that appear in the femtosecond regime. We argue that the design requirements for ultrafast optics are beyond the achromatization considerations that are usually applied to incoherent illumination because of the need to consider coherent effects. Despite fundamental limitations in the space-time control of ultrashort pulses, we show the potential of this technique to improve simultaneously the spatial and the temporal resolution of a lens and to generate ultrafast pulse sequences.

    View details for Web of Science ID 000170759400022

    View details for PubMedID 18049613

  • Optically controlled optical gate with an optoelectronic dual diode structure - theory and experiment OPTICAL AND QUANTUM ELECTRONICS Yairi, M. B., Demir, H. V., Miller, D. A. 2001; 33 (7-10): 1035-1054
  • Spatiotemporal control of ultrashort optical pulses by refractive-diffractive-dispersive structured optical elements Optics Lett. Piestun, R., Miller, D., A. B. 2001; 26: 1373-1375
  • Latency in Short Pulse-based Optical Interconnects in IEEE Lasers and Electro-Optics Society 2001 Annual Meeting Agarwal, D., Miller, D., A. B. 2001
  • Observation of wavelength-converting optical switching at 2.5 GHz in a surface-normal illuminated waveguide LEOS 2001: 14TH ANNUAL MEETING OF THE IEEE LASERS & ELECTRO-OPTICS SOCIETY, VOLS 1 AND 2, PROCEEDINGS Sabnis, V., Demir, H. V., Yairi, M., Miller, D. A., Harris, J. S. 2001: 362-363
  • Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion IEEE Photonics Tech. Lett. Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris, J., S. 2001; 13: 717-719
  • Transform spectrometer based on measuring the periodicity of Talbot self-images Optics Lett. Kung, H., L., Bhatnagar, A., Miller, D., A. B. 2001; 26: 1645-1647
  • Use of a dielectric stack as a one-dimensional photonic crystal for wavelength demultiplexing by beam shifting OPTICS LETTERS Nelson, B. E., Gerken, M., Miller, D. A., Piestun, R., Lin, C. C., Harris, J. S. 2000; 25 (20): 1502-1504

    Abstract

    We demonstrate the use of a 30-period dielectric stack structure as a highly dispersive device to spatially separate two beams with a 4-nm wavelength difference by more than their beam width. Unlike previous devices, our structure is simple to fabricate and relatively compact. We discuss possible applications of our device within wavelength-division multiplexing systems.

    View details for Web of Science ID 000089834900004

    View details for PubMedID 18066259

  • Electromagnetic degrees of freedom of an optical system JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION Piestun, R., Miller, D. A. 2000; 17 (5): 892-902

    Abstract

    We present a rigorous electromagnetic formalism for defining, evaluating, and optimizing the degrees of freedom of an optical system. The analysis is valid for the delivery of information with electromagnetic waves under arbitrary boundary conditions communicating between domains in three-dimensional space. We show that, although in principle there is an infinity of degrees of freedom, the effective number is finite owing to the presence of noise. This is in agreement with the restricted classical theories that showed this property for specific optical systems and within the scalar and paraxial approximations. We further show that the best transmitting and receiving functions are the solutions of well-defined eigenvalue equations. The present approach is useful for understanding and designing modern optical systems for which the previous approaches are not applicable, as well as for application in inverse and synthesis problems.

    View details for Web of Science ID 000086764500010

  • Spatio-temporal propagation of ultrashort pulses controlled by structured optical elements LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 Piestun, R., Miller, D. A. 2000: 294-295
  • Wavelength Monitor Based on Two Single-Quantum-Well Absorbers Sampling a Standing Wave Pattern Appl. Phys. Lett. Kung, H., L., Miller, D., A. B., Atanackovic, P., Lin, C., C., Harris Jr., J., S., Carraresi, L. 2000; 76: 3185-3187
  • Optical Interconnects to silicon IEEE J. Selected Topics in Quantum Electronics Miller, D., A. B. 2000; 6: 1312-1317
  • Electromagnetic degrees of freedom of an optical system J. Opt. Soc. Am. A Piestun, R., Miller, D., A. B. 2000; 17: 892 – 902
  • Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period NONLINEAR OPTICS: MATERIALS, FUNDAMENTALS, AND APPLICATIONS Yairi, M. B., Demir, H. V., Coldren, C. W., Harris, J. S., Miller, D. A. 2000; 46: 168-170
  • Skew and jitter removal using short optical pulses for optical interconnection IEEE Photonics Technol. Lett. Keeler, G., A., Nelson, B., E., Agarwal, D., Miller, D., A. B. 2000; 12: 714 -716
  • Communicating with waves between volumes - evaluating orthogonal spatial channels and limits on coupling strengths Appl. Opt. Miller, D., A. B. 2000; 39: 1681 – 1699
  • High-speed, optically controlled surface-normal optical switch based on diffusive conduction APPLIED PHYSICS LETTERS Yairi, M. B., Coldren, C. W., Miller, D. A., Harris, J. S. 1999; 75 (5): 597-599
  • Degrees of freedom of an electromagnetic wave 18TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR THE NEXT MILLENNIUM, TECHNICAL DIGEST Piestun, R., Miller, D. A. 1999; 3749: 110-111
  • High-Speed, Optically-Controlled Surface-Normal Modulator Based on Diffusive Conduction Appl. Phys. Lett. Yairi, M., B., Coldren, C., W., Miller, D., A. B., Harris Jr., J., S. 1999; 5 (75): 597-599
  • Spatial channels for communicating with waves between volumes Optics Lett. Miller, D., A. B. 1998; 23: 1645-1647
  • High-speed quantum well optoelectronic gate based on diffusive conduction recovery OPTICS IN COMPUTING 98 Yairi, M. B., Coldren, C. W., Miller, D. A., Harris, J. S. 1998; 3490: 10-13
  • Dual-function detector-modulator smart-pixel module APPLIED OPTICS Krishnamoorthy, A. V., WOODWARD, T. K., Goossen, K. W., Walker, J. A., Hui, S. P., Tseng, B., Cunningham, J. E., Jan, W. Y., Kiamilev, F. E., Miller, D. A. 1997; 36 (20): 4866-4870

    Abstract

    We describe a smart-pixel circuit that permits the use of a GaAs/AlGaAs multiple quantum well diode to be used both as a detector for data input and a modulator for data output. The module provides the ability to double the number of inputs or outputs to the array and is well suited to cascaded optoelectronic system architectures that require bidirectional communition.

    View details for Web of Science ID A1997XK21900034

    View details for PubMedID 18259290

  • Physical Reasons for Optical Interconnection Special Issue on Smart Pixels, Int’l J. Optoelectronics Miller, D., A. B. 1997; 3 (11): 155-168
  • Limit to the Bit-Rate Capacity of Electrical Interconnects from the Aspect Ratio of the System Architecture Special Issue on Parallel Computing with Optical Interconnects, J. Parallel and Distributed Computing Miller, D., A. B., Özaktas, H., M. 1997; 41: 42-52
  • Receiver Sensitivity Improvement by Impulsive Coding IEEE Photonics Technol. Lett. Boivin, L., Nuss, M., C., Shah, J., Miller, D., A. B., Haus, H., A. 1997; 5 (9): 684-686
  • Firehose Architectures for Free-Space Optically Interconnected VLSI Circuits J. Parallel and Distributed Computing Krishnamoorthy, Ashok, V., Miller, David, A. B. 1997; 41: 109-114
  • Digital Fourier Optics Appl. Optics Ozaktas, H., M., Miller, D., A. B. 1996; 35: 1212-1219
  • Scaling Optoelectronic-VLSI Circuits into the 21st Century: A Technology Roadmap IEEE J. Selected Topics in Quantum Electronics Krishnamoorthy, Ashok, V., Miller, David, A. B. 1996; 1 (2): 55-76
  • Arrays of Optoelectronic Switching Nodes Comprised of Flip-Chip-Bonded MQW Modulators and Detectors on Silicon CMOS Circuitry IEEE Photonics Technology Letters Lentine, A., L., Goossen, K., W., Walker, J., A., Chirovsky, L., M. F., D'Asaro, L., A., Hui, S., P., Miller, David, A.B 1996; 8: 221-223
  • Silicon Integrated Circuits Shine in News and Views, Nature Miller, D., A. B. 1996; 384: 307-308
  • GaAs MQW Modulators Integrated with Silicon CMOS IEEE Photonics Technology Letters Goossen, K., W., Walker, J., A., D'Asaro, L., A., Tseng, B., Leibenguth, R., Kossives, D., Miller, David, A.B 1995; 7: 360-362
  • 3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit IEEE Photonics Technology Letters Krishnamoorthy, A., V., Lentine, A., L., Goossen, K., W., Walker, J., A., Woodward, T., K., Ford, J., E., Miller, David, A.B 1995; 7: 1288-1290
  • Wavelength-division multiplexing with femtosecond pulses Optics Letters Souza, E., A. De, Nuss, M., C., Knox, W., H., Miller, D., A. B. 1995; 20: 1166-1168
  • Ring oscillators with optical and electrical readout based on hybrid GaAs MQW modulators bonded to 0.8 um silicon VLSI circuits Electronics Letters Krishnamoorthy, A., V., Woodward, T., K., Novotny, R., A., Goossen, K., W., Walker, J., A., Lentine, A., L., Miller, David, A.B 1995; 31: 1917-1918
  • Laser Tuners and Wavelength-Sensitive Detectors Based on Absorbers in Standing Waves IEEE Journal of Quantum Electronics Miller, D., A. B. 1994; 30: 732-749
  • Linear image differentiation by use of analog differential self-electro- optic effect devices Optics Letters DeSouza, E., A., Carraresi, L., Miller, D., A. B. 1994; 19: 1882-1884
  • Wavelength-selective detector based on a quantum well in a standing wave Appl. Phys. Lett. Carraresi, L., DeSouza, E., A., Miller, D., A. B., Jan, W., Y., Cunningham, J., E. 1994; 64: 134-136
  • Femtosecond pulse distortion in GaAs quantum wells and its effect on pump-probe or four-wave-mixing experiments Phys. Rev. B Kim, D., S., Shah, J., Miller, D., A. B., Damen, T., C., Vinattieri, A., Schäfer, W. 1994; 50: 18240-18249
  • Self-linearized analog differential self-electro-optic-effect device Appl. Optics De Souza, E., A., Carraresi, L., Boyd, G., D., Miller, D., A. B. 1994; 33: 1492-1497
  • Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixels IEEE J. of Quantum Electronics Lentine, A., L., Miller, D., A. B. 1993; 29: 655-669
  • Carrier Escape Dynamics In A Single-Quantum-Well Wave-Guide Modulator Optical and Quantum Electronics Bambha, R., Hutchings, D., C., Snelling, M., J., Wa, P., Li Kam, Miller, A., Moretti, A., L. 1993; #12 (25): S965-S971
  • Analog differential self-linearized quantum-well self-electro-optic-effect modulator Optics Letters DeSouza, E., A., Carraresi, L., Boyd, G., D., Miller, D., A. B. 1993; 18: 974-976
  • Wavelength dependence of saturation and thermal effects in multiple quantum well modulators Appl. Phys. Lett. Boyd, G., D., Cavailles, J., A., Chirovsky, L., M. F., Miller, D., A. B. 1993; 63: 1715-1717
  • Novel analog self-electrooptic-effect devices IEEE J. of Quantum Electronics Miller, D., A. B. 1993; 29: 678-698
  • Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25° C to 95° C operating range IEEE Photo. Tech. Lett. Goossen, K., W., Cunningham, J., E., Jan, W., Y., Miller, D., A. B. 1993; 5: 181-183
  • Femtosecond-pulse distortion in quantum wells Phys. Rev. B Kim, D., S., Shah, J., Miller, D., A. B., Damen, T., C., Schäfer, W., Pfeiffer, L. 1993; 48: 902-905
  • Coherent submillimeter- wave emission from charge oscillations in a double-well potential Phys. Rev. Lett. Roskos, H., G., Nuss, M., C., Shah, J., Leo, K., Miller, D., A. B., Fox, A., M. 1992; 68: 2216-2219
  • Optical investigation of Bloch oscillations in a semiconductor superlattice Physical Review B Feldmann, J., Leo, K., Shah, J., Miller, D., A. B., Cunningham, J., E., Meier, T. 1992; 46: 7252-7255
  • Suppression of the observation of Stark ladders in optical measurements on superlattices by excitonic effects Physical Review B Fox, A., M., Miller, D., A. B., Cunningham, J., E., Jan, W., Y., Chao, C., Y. P., Chuang, S., L. 1992; 46: 15365-15376
  • Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics IEEE J. of Quantum Electronics Cavailles, J., A., Miller, D., A. B., Cunningham, J., E., Wa, P., Li Kam, Miller, A. 1992; 28: 2486-2497
  • Photonic Switching Based on Free-Space Digital Optics Trends in Telecommunications Hinton, H., S., Miller, D., A. B. 1992; 8: 43-52
  • Logic self-electrooptic effect devices: quantum-well optoelectronic multiplexers, and shift registers IEEE J. of Quantum Electronics Lentine, A., L., Tooley, F., A. P., Walker, S., L., McCormick, F., B., Morrison, R., L., Chirovsky, L., M. F., Miller, David, A.B 1992; 28: 1539-1553
  • Free-Space Photonics in Switching AT&T Technical Journal Hinton, H., S., Miller, D., A. B. 1992: 84-92
  • Simultaneous measurement of electron and hole escape times from biased single quantum wells Appl. Phys. Lett. Cavailles, J., A., Miller, D., A. B., Cunningham, J., E., Wa, P., Li Kam, Miller, A. 1992; 61: 426-428
  • Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber Optics Letters Keller, U., Miller, D., A. B., Boyd, G., D., Chiu, T., H., Ferguson, J., F., Asom, M., T. 1992; 17: 505-507
  • Huygen's wave propagation principle corrected Optics Letters Miller, D., A. B. 1991; 16: 1370-1372
  • Quantum well carrier sweep out: relation to electroabsorption and exciton saturation IEEE J. of Quantum Electronics Fox, A., M., Miller, D., A. B., Livescu, G., Cunningham, J., E., Jan, W., Y. 1991; 27: 2281-2295
  • Excitonic effects in coupled quantum wells Physical Review B Fox, A., M., Miller, D., A. B., Livescu, G., Cunningham, J., E., Jan, W., Y. 1991; 44: 6231-6242
  • Optimization of Absorption in Symmetric Self-Electrooptic Effect Devices: A Systems Perspective IEEE J. of Quantum Electronics Lentine, A., L., Miller, D., A. B., Chirovsky, L., M. F., D'Asaro, L., A. 1991; 27: 2431-2439
  • Fast escape of photocreated carriers out of shallow quantum wells Appl. Phys. Lett. Feldmann, J., Goossen, K., W., Miller, D., A. B., Fox, A., M., Cunningham, J., E., Jan, W., Y. 1991; 59: 66-68
  • Exciton Green's-function approach to optical absorption in a quantum well with an applied electric field Physical Review B Chuang, S., L., Scmitt-Rink, S., Miller, D., A. B., Chemla, D., S. 1991; 43: 1500-1509
  • Electroabsorption in II-VI Multiple Quantum Wells Appl. Phys. Lett. Partovi, A., Glass, A., M., Olson, D., H., Feldman, R., D., Austin, R., F., Lee, D., Miller, David, A.B 1991; 58: 334-336
  • 33 ps optical switching of symmetric self-electro-optic effect devices Applied Physics Letters Boyd, G., D., Fox, A., M., Miller, D., A. B. 1990; 57: 1843-1845
  • Comment on 'Optical bistability in self-electro-optic effect devices with asymmetric quantum wells' and on 'Novel configuration of self-electro-optic effect device based on asymmetric quantum wells' Applied Physics Letters Miller, D., A. B. 1990; 57: 1363-1365
  • Low-Energy ultrafast fiber soliton logic gates Optics Letters Islam, M., N., Soccolich, C., E., Miller, D., A. B. 1990; 90: 909-911
  • Observation of Room-Temperature Blue Shift and Bistability in a Strained InGaAs-GaAs (111) Self-Electro-Optic Effect Device Applied Physics Letters Goossen, K., W., Caridi, E., A., Chang, T., Y., Stark, J., B., Miller, D., A. B., Morgan, R., A. 1990; 56: 715-717
  • Ultrafast Nonlinear Optical Effects in Biased Semiconductor Quantum Wells phys. stat. sol. (b) Chemla, D., S., Schmitt-Rink, S., Knox, W., H., Miller, D., A. B., Goossen, K., W., Hasnain, G. 1990; 159: 11
  • Quantum-well self-electro-optic effect devices Optical and Quantum Electronics Miller, D., A. B. 1990; 22: S61-S98
  • Quantum Well Optoelectronic Switching Devices International J. of High Speed Electronics Miller, D., A. B. 1990; 1: 19-46
  • Quantum well optical tri-state devices Applied Optics Lentine, A., L., Hinterlong, S., J., Cloonan, T., J., McCormick, F., B., Miller, D., A. B., Chirovsky, L., M. F. 1990; 29: 1157-1160
  • Optoelectronic applications of quantum wells Optics & Photonics News Miller, D., A. B. 1990; 1 (2): 7-15
  • Nonlinear Optical Properties of GaAs/(AlGa)As Multiple Quantum Well Structures under Quasistationary High Excitation Conditions physica status solidi (b) Schlaad, K., H., Weber, Ch., Chemla, D., S., Cunningham, J., E., Miller, D., A. B., Hoof, C., V. 1990; 159: 173-180
  • Excitons in Resonantly Coupled Quantum Wells SPIE 1283 Quantum-Well and Superlattice Physics III Fox, A., M., Miller, D., A. B., Livescu, G., Cunningham, J., E., Henry, J., E., Jan, W., Y. 1990: 164-174
  • Excitons in resonant coupling of quantum wells Physical Review B Fox, A., M., Miller, D., A. B., Livescu, G., Cunningham, J., E., Henry, J., E., Jan, W., Y. 1990; 42: 1841-1844
  • Exciton saturation in electrically biased quantum wells Applied Physics Letters Fox, A., M., Miller, D., A. B., Livescu, G., Cunningham, J., E., Henry, J., E., Jan, W., Y. 1990; 57: 2315-2317
  • Effect of collisions and relaxation on coherent resonant tunneling: Hole tunneling in GaAs/Al x Ga 1-x As double- quantum-well structures Physical Review B Leo, K., Shah, J., Gordon, J., P., Damen, T., C., Miller, D., A. B., Tu, C., W. 1990; 11 (42): 7065-7068
  • Optical logic using electrically connected quantum well PIN diode modulators and detectors Applied Optics Lentine, A., L., Miller, D., A. B., Henry, J., E., Cunningham, J., E., Chirovsky, L., M. F., D'Asaro, L., A. 1990; 29: 2153-2163
  • How fast is excitonic electroabsorption? Optics Letters Schmitt-Rink, S., Chemla, D., S., Knox, W., H., Miller, D., A. B. 1990; 15: 60-62
  • Femtosecond ac Stark Effect in Semiconductor Quantum Wells: Extreme Low- and High-Intensity Limits Phys. Rev. Lett. Knox, W., H., Chemla, D., S., Miller, D., A. B. 1989; 62: 1189-1192
  • GaAs-AlGaAs Multiquantum Well Reflection Modulators Grown on GaAs and Silicon Substrates IEEE Photonics Tech. Lett. Goossen, K., W., Boyd, G., D., Cunningham, J., E., Jan, W., Y., Miller, D., A. B., Chemla, D., S. 1989; 1: 304-306
  • Linear and nonlinear optical properties of semiconductor quantum wells Adv. Phys. Schmitt-Rink, S., Chemla, D., S., Miller, D., A. B. 1989; 38: 89-188
  • Femtosecond Excitonic Optoelectronics IEEE J. of Quantum Electronics Knox, W., H., Henry, J., E., Goossen, K., W., Li, K., D., Tell, B., Miller, D., A. B. 1989; 24: 2586-2595
  • Room-temperature electroabsorption and switching in a GaAs/AlGaAs superlattice Appl. Phys. Lett. Bar-Joseph, I., Goossen, K., W., Kuo, J., M., Kopf, R., F., Miller, D., A. B., Chemla, D., S. 1989; 55: 340-342
  • High-speed absorption recovery in quantum well diodes by diffusive electrical conduction Appl. Phys. Lett. Livescu, G., Miller, D., A. B., Sizer, T., Burrows, D., J., Cunningham, J., Gossard, A., C. 1989; 54: 748-750
  • Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor IEEE Photonics Tech. Lett. Miller, D., A. B., Feuer, M., D., Chang, T., Y., Shunk, S., C., Henry, J., E., Burrows, D., J. 1989; 1: 61-64
  • The Excitonic Optical Stark Effect in Semiconductor Quantum Wells Probed With Femtosecond Optical Pulses Journal of Luminescence Chemla, D., S., Knox, W., H., Miller, D., A. B., Schmitt-Rink, S., Stark, J., B., Zimmermann, R. 1989; 44: 233-246
  • Symmetric Self-Electrooptic Effect Device: Optical Set-Reset Latch, Differential Logic Gate, and Differential Modulator/Detector IEEE J. of Quantum Electronics Lentine, A., L., Hinton, H., S., Miller, D., A. B., Henry, J., E., Cunningham, J., E., Chirovsky, L., M. F. 1989; 25: 1928-1936
  • Optics for low-energy communication inside digital processors: quantum detectors, sources, and modulators as efficient impedance converters Optics Letters Miller, D., A. B. 1989; 14: 146-148
  • Optical detection of resonant tunneling of electrons in quantum wells Semiconductor Sci. Technology Livescu, G., Fox, A., M., Sizer, T., Knox, W., H., Cunningham, J., E., Gossard, A., C. 1989; 5: 549-556
  • Multistate Self-Electrooptic Effect Devices IEEE J. of Quantum Electronics Lentine, A., L., Miller, D., A. B., Henry, J., E., Cunningham, J., E., Chirovsky, L., M. F. 1989; 25: 1921-1927
  • Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wells Phys. Rev. B. Oberli, D., Y., Shah, J., Damen, T., C., Tu, C., W., Chang, T., Y., Miller, D., A. B. 1989; 40: 3028-3031
  • 5.5 GHz Multiple Quantum Well Reflection Modulator Electronics Lett. Boyd, G., D., Bowers, J., E., Soccolich, C., E., Miller, D., A. B., Chemla, D., S., Chirovsky, L., M. F. 1989; 25: 558-560
  • Energy scaling and subnanosecond switching of symmetric self-electrooptic effect devices IEEE Photonics Tech. Lett. Lentine, A., L., Chirovsky, L., M. F., D'Asaro, L., A., Tu, C., W., Miller, D., A. B. 1989; 1: 129-131
  • Resonantly Enhanced Electron Tunneling Rates in Quantum Wells Phys. Rev. Lett. Livescu, G., Fox, A., M., Miller, D., A. B., Sizer, T., Knox, W., H. 1989; 63: 438-441
  • Free carrier and many-body effects in absorption spectra of modulation-doped quantum wells IEEE J. Quantum Electron. Livescu, G., Miller, D., A. B., Chemla, D., S., Ramaswamy, M., Chang, T., Y., Sauer, N. 1988; 24: 1677-1689
  • Gain measurement and band-gap renormalization in GaAs/Alx Ga1-xAs multiple-quantum-well structures Phys. Rev. B Weber, C., Klingshirn, C., Chemla, D., S., Miller, D., A. B., Cunningham, J., E. 1988; 38: 12748-12751
  • Modulation of absorption in field-effect quantum well structures IEEE J. Quantum Electron. Chemla, D., S., Bar-Joseph, I., Kuo, J., M., Chang, T., Y., Klingshirn, C., Livescu, G., Miller, David, A.B 1988; 24: 1664-1676
  • Symmetric self-electro-optic effect device: Optical set-reset latch Appl. Phys. Lett. Lentine, A., L., Hinton, H., S., Miller, D., A. B., Henry, J., E., Cunningham, J., E., Chirovsky, L., M. F. 1988; 52: 1419-1421
  • Spatial light modulator and optical dynamic memory using a 6 x 6 array of self-electro-optic-effect devices Optics Letters Livescu, G., Miller, D., A. B., Henry, J., E., Gossard, A., C., English, J., H. 1988; 13: 297-299
  • Optical bistability in self-electro-optic effect devices with asymmetric quantum wells Appl. Phys. Lett. Miller, D., A. B. 1988; 54: 202-204
  • Electron-hole correlation singularity in optical spectra of modulation doped GaAs-AlGaAs quantum wells Superlattices and Microstructures Livescu, G., Miller, D., A. B., Chemla, D., S. 1988; 4: 359-361
  • Electroabsorption of highly confined systems: Theory of the quantum-confined Franz-Keldysh effect in semiconductor quantum wires and dots Appl. Phys. Lett. Miller, D., A. B., Chemla, D., S., Schmitt-Rink, S. 1988; 52: 2154-2156
  • All-optical regenerator Electronics Lett. Giles, C., R., Li, T., Wood, T., H., Burrus, C., A., Miller, D., A. B. 1988; 4: 848-850
  • Self-electrooptic effect device and modulation converter with InGaAs/InP multiple quantum wells Appl. Phys. Lett. Bar-Joseph, I., Sucha, G., Miller, D., A. B., Chemla, D., S., Miller, B., I., Koren, U. 1988; 52: 51-53
  • Low Voltage Modulator and Self-Biased Self-Electro-Optic Effect Device Electronics Lett. Weiner, J., S., Gossard, A., C., English, J., H., Miller, D., A. B., Chemla, D., S., Burrus, C., A. 1987; 23: 75-77
  • High-Frequency InGaAs/InP Multiple-Quantum-Well Buried-Mesa Electroabsorption Optical Modulator Electronics Letters Koren, U., Miller, B., I., Tucker, R., S., Eisenstein, G., Bar-Joseph, I., Miller, D., A. B. 1987; 23: 621-622
  • Electroabsorption in GaAs/AlGaAs Coupled Quantum Well Waveguides Appl. Phys. Lett. Islam, M., N., Hillman, R., L., Miller, D., A. B., Chemla, D., S., Gossard, A., C., English, J., H. 1987; 50: 1098-1100
  • Theory of the Linear and Nonlinear Optical Properties of Semiconductor Microcrystallites Phys. Rev. B Schmitt-Rink, S., Miller, D., A. B., Chemla, D., S. 1987; 35: 8113-8125
  • Optical Reading of Field-Effect Transistors by Phase-Space Absorption Quenching in a Single InGaAs Quantum Well Conducting Channel Appl. Phys. Lett. Chemla, D., S., Bar-Joseph, I., Klingshirn, C., Miller, D., A. B., Kuo, J., M., Chang, T., Y. 1987; 50: 585-587
  • Quantum-Confined Stark Effect in InGaAs/InP Quantum Wells Grown by Organometallic Vapor Phase Epitaxy Appl. Phys. Lett. Bar-Joseph, I., Klingshirn, C., Miller, D., A. B., Chemla, D., S., Koren, U., Miller, B., I. 1987; 50: 1010-1012
  • Quantum Wells for Optical Information Processing Opt. Eng. Miller, D., A. B. 1987; 26: 368-372
  • Generation of Ultrashort Electrical Pulses through Screening by Virtual Populations in Biased Quantum Wells Phys. Rev. Lett. Chemla, D., S., Miller, D., A. B., Schmitt-Rink, S. 1987; 59: 1018-1021
  • Absorption Spectroscopy of the Continuous Transition from Low to High Electron Density in a Single Modulation Doped InGaAs Quantum Well Phys. Rev. Lett. Bar-Joseph, I., Kuo, J., M., Klingshirn, C., Livescu, G., Miller, D., A. B., Chang, T., Y. 1987; 59: 1357-1360
  • Quadratic Electro-Optic Effect due to the Quantum-Confined Stark Effect in Quantum Wells Appl. Phys. Lett. Weiner, J., S., Miller, D., A. B., Chemla, D., S. 1987; 50: 842-844
  • Multiple Quantum Well Reflection Modulator Appl. Phys. Lett. Boyd, G., D., Miller, D., A. B., Chemla, D., S., McCall, S., L., Gossard, A., C., English, J., H. 1987; 50: 1119-1121
  • Novel Optical Modulators and Bistable Devices Using the Self-Electro-Optic Effect in Semiconductor Quantum Wells Surface Science Miller, D., A. B. 1986; 174: 221-232
  • Relation Between Electroabsorption in Bulk Semiconductors and in Quantum Wells: The Quantum-Confined Franz-Keldysh Effect Phys. Rev. B Miller, D., A. B., Chemla, D., S., Schmitt-Rink, S. 1986; 33: 6976-6982
  • Electric Field Dependence of Linear Optical Properties in Quantum Well Structures: Waveguide Electroabsorption and Sum Rules IEEE J. Quantum Electron. Miller, D., A. B., Weiner, J., S., Chemla, D., S. 1986; QE-22: 1816-1830
  • Subpicosecond Excitonic Electroabsorption in Room-Temperature Quantum Wells Appl. Phys. Lett. Knox, W., H., Miller, D., A. B., Damen, T., C., Chemla, D., S., Shank, C., V., Gossard, A., C. 1986; 48: 864-866
  • Nonlinear Spectroscopy of InGaAs/InAlAs Multiple Quantum Well Structures Appl. Phys. Lett. Weiner, J., S., Pearson, D., B., Miller, D., A. B., Chemla, D., S., Sivco, D., Cho, A., Y. 1986; 49: 531-533
  • Mechanism for Enhanced Optical Nonlinearities and Bistability by Combined Dielectric-Electronic Confinement in Semiconductor Microcrystallites Optics Lett. Chemla, D., S., Miller, D., A. B. 1986; 11: 522-524
  • Integrated Quantum Well Self-Electro-Optic Effect Device: 2x2 Array of Optically Bistable Switches Appl. Phys. Lett. Miller, D., A. B., Henry, J., E., Gossard, A., C., English, J., H. 1986; 49: 821-823
  • Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum Wells Phys. Rev. Lett. Knox, W., H., Hirlimann, C., Miller, D., A. B., Shah, J., Chemla, D., S., Shank, C., V. 1986; 56: 1191-1193
  • Attenuation of Cutoff Modes and Leaky Modes of Dielectric Slab Structures IEEE J. Quantum Electron Haus, H., A., Miller, D., A. B. 1986; QE-22: 310-324
  • Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures Phys. Rev. B Miller, D., A. B., Chemla, D., S., Damen, T., C., Gossard, A., C., Wiegmann, W., Wood, T., H. 1985; 32: 1043-1060
  • Wavelength-Selective Voltage-Tunable Photodetector Made from Multiple Quantum Wells Appl. Phys. Lett. Wood, T., H., Burrus, C., A., Gnauck, A., H., Wiesenfeld, J., M., Miller, D., A. B., Chemla, D., S. 1985; 47: 190-192
  • Nonlinear Optical Properties of GaAs/GaAlAs Multiple Quantum Well Material: Phenomena and Applications. Opt. Eng. Chemla, D., S., Miller, D., A. B., Smith, P., W. 1985; 24: 556-564
  • Strong Polarization Sensitive Electroabsorption in GaAs/AlGaAs Quantum Well Waveguides J. Opt. Soc. Am. A Weiner, J., S., Miller, D., A. B., Chemla, D., S., Damen, T., C., Gossard, A., C., Wiegmann, W. 1985; 2: 44
  • Room-Temperature Excitonic Nonlinear-Optical Effects in Semiconductor Quantum-Well Structures J. Opt. Soc. Am. B Chemla, D., S., Miller, D., A. B. 1985; 2: 1155-1173
  • Multiple Quantum Well Optical Nonlinearities: Bistability from Increasing Absorption and the Self Electro-Optic Device Phil. Trans. R. Soc. Lond. A Miller, D., A. B. 1985; 313: 239-244
  • Mode Locking of Semiconductor Diode Lasers Using Saturable Excitonic Nonlinearities J. Opt. Soc. Am. B Smith, P., W., Silberberg, Y., Miller, D., A. B. 1985; 2: 1228-1236
  • 131 ps Optical Modulation in Semiconductor Quantum Wells (MQW's) IEEE J. Quantum Electron. Wood, T., H., Burrus, C., A., Miller, D., A. B., Chemla, D., S., Damen, T., C., Gossard, A., C. 1985; QE-21: 117-118
  • Theory of Transient Excitonic Optical Nonlinearities in Semiconductor Quantum-Well Structures Phys. Rev. B Schmitt-Rink, S., Chemla, D., S., Miller, D., A. B. 1985; 32: 6601-6609
  • The Quantum Well Self-Electrooptic Effect Device: Optoelectronic Bistability and Oscillation, and Self Linearized Modulation IEEE J. Quantum Electron Miller, D., A. B., Chemla, D., S., Damen, T., C., Wood, T., H., Burrus, C., A., Gossard, A., C. 1985; QE-21: 1462-1476
  • Highly Anisotropic Optical Properties of Single Quantum Well Waveguides Appl. Phys. Lett. Weiner, J., S., Chemla, D., S., Miller, D., A. B., Haus, H., A., Gossard, A., C., Wiegmann, W. 1985; 47: 664-667
  • Femtosecond Dynamics of Resonantly Excited Excitons in Room Temperature GaAs Quantum Wells Phys. Rev. Lett. Knox, W., H., Fork, R., L., Downer, M., C., Miller, D., A. B., Chemla, D., S., Shank, C., V. 1985; 54: 1306-1309
  • Fast Nonlinear Optical Response from Proton-Bombarded Multiple Quantum Well Structures Appl. Phys. Lett. Silberberg, Y., Smith, P., W., Miller, D., A. B., Tell, B., Gossard, A., C., Wiegmann, W. 1985; 46: 701-703
  • 100 ps Waveguide Multiple Quantum Well (MQW) Optical Modulator with 10:1 On/Off Ratio Electronics Lett. Wood, T., H., Burrus, C., A., Tucker, R., S., Weiner, J., S., Miller, D. , A. B., Chemla, D., S. 1985; 21: 693-694
  • Strong Polarization-Sensitive Electroabsorption in GaAs/AlGaAs Quantum Well Waveguides Appl. Phys. Lett. Weiner, J., S., Miller, D., A. B., Chemla, D., S., Damen, T., C., Burrus, C., A., Wood, T., H. 1985; 47: 1148-1150
  • Room-temperature Excitons in 1.6µ band-gap GaInAs/AlInAs Quantum Wells Appl. Phys. Lett. Weiner, J., S., Chemla, D., S., Miller, D., A. B., Wood, T., H., Sivco, D., Cho, A., Y. 1985; 46: 619-621
  • Physics and Applications of Room Temperature Excitonic Electroabsorption in Quantum Wells J. Opt. Soc. Am. A Miller, D., A. B. 1985; 2: 47
  • Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures IEEE J. Quantum Electron. Chemla, D., S., Miller, D., A. B., Smith, P., W., Gossard, A., C., Wiegmann, W. 1984; QE-20: 265-275
  • Optical-level Shifter and Self-Linearized Optical Modulator Using a Quantum-Well Self-Electro-Optic Effect Device Optics Lett. Miller, D., A. B., Chemla, D., S., Damen, T., C., Wood, T., H., Burrus, C., A., Gossard, A., C. 1984; 9: 567-569
  • Passive Modelocking of a Semiconductor Diode Laser Optics Lett. Silberberg, Y., Smith, P., W., Eilenberger, D., J., Miller, D., A. B., Gossard, A., C., Wiegmann, W. 1984; 9: 507-509
  • Optical Bistability due to Increasing Absorption Optics Lett. Miller, D., A. B., Gossard, A., C., Wiegmann, W. 1984; 9: 162-164
  • Optical Bistability and Differential Gain Resulting from Absorption Increasing with Excitation J. Opt. Soc. Am. B Miller, D., A. B. 1984; 1: 857-864
  • Novel Hybrid Optically Bistable Switch: The Quantum Well Self Electro-Optic Effect Device Appl. Phys. Lett. Miller, D., A. B., Chemla, D., S., Damen, T., C., Gossard, A., C., Wiegmann, W., Wood, T., H. 1984; 45: 13-15
  • High-Speed Optical Modulation with GaAs/GaAlAs Quantum Wells in a p-i-n Diode Structure Appl. Phys. Lett. Wood, T., H., Burrus, C., A., Miller, D., A. B., Chemla, D., S., Damen, T., C., Gossard, A., C. 1984; 44: 16-18
  • Femtosecond Dynamics of Nonequilibrium Correlated Electron-Hole Pair Distributions in Room-Temperature GaAs Multiple Quantum Well Structures Ultrafast Phenomena IV Knox, W., H., Fork, R., L., Downer, M., C., Miller, D., A. B., Chemla, D., S., Shank, C., V. 1984: 162-165
  • Bandedge Electro-absorption in Quantum Well Structures: The Quantum Confined Stark Effect Phys. Rev. Lett. Miller, D., A. B., Chemla, D., S., Damen, T., C., Gossard, A., C., Wiegmann, W., Wood, T., H. 1984; 53: 2173-2177
  • Nonlinear Optics with a Diode Laser Light Source Optics Lett. Miller, D., A. B., Chemla, D., S., Smith, P., W., Gossard, A., C., Wiegmann, W. 1983; 8: 477-479
  • Dynamic Nonlinear Optics in Semiconductors: Physics and Applications Laser Focus Miller, D., A. B. 1983; 19 (7): 61-68
  • Electroabsorption by Stark Effect on Room-Temperature Excitons in GaAs/GaAlAs Multiple Quantum Well Structures Appl. Phys. Lett. Chemla, D., S., Damen, T., C., Miller, D., A. B., Gossard, A., C., Wiegmann, W. 1983; 42: 864-866
  • Degenerate Four-Wave Mixing in Room-Temperature GaAs/GaAlAs Multiple Quantum Well Structures Appl. Phys. Lett. Miller, D., A. B., Chemla, D., S., Eilenberger, D., J., Smith, P., W., Gossard, A., C., Wiegmann, W. 1983; 42: 925-927
  • Large Room-Temperature Optical Nonlinearity in GaAs/Ga1-xAlxAs Multiple Quantum Well Structures Appl. Phys. Lett. Miller, D., A. B., Chemla, D., S., Eilenberger, D., J., Smith, P., W., Gossard, A., C., Tsang, W., T. 1982; 41: 679-681
  • Room-Temperature Saturation Characteristics of GaAs-GaAlAs Multiple Quantum Well Structures and of Bulk GaAs Appl. Phys. B Miller, D., A. B., Chemla, D., S., Smith, P., W., Gossard, A., C., Tsang, W., T. 1982; 28: 96-96
  • Dynamic Nonlinear Optics in Semiconductors Appl. Phys. B Miller, A., Miller, D., A. B. 1982; 28: 92-93
  • Bistable Optical Devices: Physics and Operating Characteristics Laser Focus Miller, D., A. B. 1982; 18 (4): 79-84
  • Optical Bistability Laser Focus Smith, P., W., Miller, D., A. B. 1982; 18: 77-78
  • Large Nonlinearities in Room-Temperature GaAs Structures J. Opt. Soc. Am. Miller, D., A. B., Chemla, D., S., Smith, P., W., Gossard, A., C. 1982; 72: 1783
  • Dynamic Nonlinear Optical Processes in Semiconductors Adv. Phys. Miller, A., Miller, D., A. B., Smith, S., D. 1981; 30: 697-800
  • Optical Bistability in Semiconductors IEEE Journal of Quantum Electronics Miller, D., A. B., Smith, S., D., Seaton, C., T. 1981; QE-17: 312-317
  • Refractive Fabry-Perot Bistability with Linear Absorption: Theory of Operation and Cavity Optimization IEEE Journal of Quantum Electronics Miller, D., A. B. 1981; QE-17: 306-311
  • Degenerate Four-Wave Mixing in InSb at 5K Optics Communications Miller, D., A. B., Harrison, R., G., Johnston, A., Seaton, C., T., Smith, S., D. 1980; 32: 478-480
  • Computing at the Speed of Light New Scientist Smith, S., D., Miller, D., A. B. 1980; 85
  • Time Reversal of Optical Pulses by Four-Wave Mixing Optics Lett. Miller, D., A. B. 1980; 5: 300-302
  • The Microscopic Mechanism of Third-Order Optical Nonlinearity in InSb Optics Commun. Miller, D., A. B., Smith, S., D., Wherrett, B., S. 1980; 35: 221-226
  • Effect of Low-Power Nonlinear Refraction on Laser Beam Propagation in InSb Optics Lett. Weaire, D., Wherrett, B., S., Miller, D., A. B., Smith, S., D. 1979; 4: 331-333
  • Nonlinear Refraction and Absorption in InSb Inst. Phys. Conf. Ser. Holah, G., D., Dempsey, J., Miller, D., A. B., Wherrett, B., S., Miller 1979: 505-508
  • Optical Bistability and Signal Amplification in a Semiconductor Crystal. Application of New Low-Power Nonlinear Effects in InSb Appl. Phys. Lett. Miller, D., A. B., Smith, S., D., Johnston, A. 1979; 35: 658-660
  • Two Beam Optical Signal Amplification and Bistability in InSb Optics Commun. Miller, D., A. B., Smith, S., D. 1979; 31: 101-104
  • Variable Attenuator for Gaussian Laser Beams Applied Optics Miller, D. , A. B., Smith, S., D. 1978; 17: 3804-3808
  • Nonlinear Optical Effects in InSb with a cw CO Laser Optics Commun Miller, D. , A. B., Mozolowski, M., H., Miller, A., Smith, S., D. 1978; 27: 133-136

Books and Book Chapters


  • Optical Receiver Sensitivity Improvement by Impulsive Coding OSA TOPS on Ultrafast Electronics and Optoelectronics Boivin, L., Nuss, M., C., Shah, J., Miller, D., A. B., Haus, H., A. edited by Nuss, M., Bowers, J. Optical Society of America. 1997: 63-67
  • Dense Optical Interconnections for Silicon Electronics in Trends in Optics: Research, Developments, and Applications Miller, David, A. B. edited by Consortini, A. Int’l Commission for Optics, Academic Press. 1996: 207-222
  • Optical Detection of Resonant Tunneling: Measurement of Tunneling Times and Resonant Fields in Resonant Tunneling in Semiconductors Livescu, G., Fox, A., M., Miller, D., A. B. edited by Chang et al., L., L. Plenum Press, New York. 1991: 331-339
  • Device requirements for digital optical processing Digital Optical Computing Miller, D., A. B. edited by Athale, R., A. SPIE Critical Reviews of Optical Science and Technology. 1990: 68-76
  • Integrated Quantum Well Switching Devices Optical Switching in Low Dimensional Systems Miller, D., A. B. Plenum Press, New York and London. 1988: 1-8
  • Electric field dependence of optical properties of semiconductor quantum wells: physics and applications Nonlinear Optical Properties of Semiconductors Miller, D., A. B., Chemla, D., S., Schmitt-Rink, S. edited by Haug, H. Academic Press, San Diego. 1988: 325-359
  • Nonlinear Optical Properties of Semiconductor Quantum Wells Nonlinear Optical Properties of Semiconductors Chemla, D., S., Miller, D., A. B., Schmitt-Rink, S. edited by Haug, H. Academic Press, San Diego. 1988: 83-120
  • Optical Bistability Optical Bistability and Multistability in the Semiconductor InSb Miller, D., A. B., Smith, S., D., Seaton, C., T. edited by Bowden, C., M., Ciftan, M., Robl, H., R. Plenum. 1981: 115-126

Conference Proceedings


  • Nanoscale Integrated Planar Multispectral Image Sensors Balram, K., C., Miller, D., A. B. 2013
  • Self-aligned Silicon Fins in Metallic Slits as a Platform for Planar Tunable Nanoscale Resonant Photodetectors Balram, K., C., Miller, D., A. B. 2012
  • Routing and Detection of Light on Deeply Subwavelength scale in Two-conductor Metallic Slot Waveguides Balram, K., C., Ly-Gagnon, D., S., White, J., Wahl, P., Brongersma, M., Miller, D., A. B. 2012
  • Energy use in optical modulators Miller, D., A. B. 2012
  • On-Chip Optical Propagation and Photodetection in Nanometer-Scale Two-Conductor Plasmonic Waveguides Ly-Gagnon, D., s., Balram, K., C., White, J., S., Wahl, P., Brongersma, M., L., Miller, D., A. B. 2011
  • A Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated with SOI Waveguides Ren, S., Rong, Y., Claussen, S., Schaevitz, R., Kamins, T., I., Harris, J., S., Miller, David, A.B 2011
  • Ge Quantum Well Resonator Modulators Edwards, E., H., Audet, R., M., Fei, E., Shambat, G., Schaevitz, R., K., Rong, Y., Miller, David, A.B 2011
  • Simple Electroabsorption Calculator for Germanium Quantum Well Devices Schaevitz, R., K., Edwards, E., H., Ren, S., Ly-Gagnon, D., S., Audet, R., M., Rong, Y., Miller, David, A.B 2011
  • Surface-Normal, Asymmetric Fabry-Perot Quantum-Confined Stark Effect Electro-Absorption Modulator on Silicon Audet, R., M., Claussen, S., A., Edwards, E., H., Ren, S., Schaevitz, T., k., Tasyurek, E., Miller, David, A.B 2010
  • Plasmonic Device in CMOS Tang, L., Latif, S., Miller, D., A. B. 2008
  • Spectral Analysis of Scattering in Metal-Insulator-Metal Waveguides and Related Equivalent Circuit Models Kocabas, S., E., Veronis, G., Miller, D., A. B., Fan, S., H. 2008
  • Fundamental limit to optical component Miller, D., A. B. 2007
  • Rise-time measurements of low capacitance CMOS detectors using a pump-probe technique Latif, S., Kocabas, S., E., Tang, L., Miller, D., A. B. 2007
  • Plasmonic waveguides as transmission lines Kocabas, S., E., Ly-Gagnon, D., S., Miller, D., A. B. 2007
  • On perfect invisibility and cloaking Miller, D., A. B. 2007
  • Near-infrared photodetector enhanced by an open-sleeve dipole antenna Tang, L., Kocabas, E., Latif, S., Okyay, A., K., Ly-Gagnon, D., Saraswat, K., C., Miller, David, A.B 2007
  • 1550 nm Optical Interconnect Transceiver with Low Voltage Electroabsorption Modulators Flip-Chip Bonded to 90 nm CMOS Roth, J., E., Palermo, S., Helman, N., C., Bour, D., P., Miller, D., A. B., Horowitz, M., A. 2007
  • Waveguide electroabsorption modulator on Si employing Ge/SiGe quantum wells Fidaner, O., Okyay, A., K., Roth, J., E., Kuo, Y., H., Saraswat, K., C., Harris, J., S., Miller, David, A.B 2007
  • Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared Okyay, A., K., Pethe, A., J., Kuzum, D., Latif, S., Miller, D., A. B., Saraswat, K., C. 2007
  • Optical modulator on Si employing Ge quantum wells Roth, J., E., Fidner, O., Schaevitz, R., K., Edwards, E., H., Kuo, Y., H., Kamins, T., I., Miller, David, A.B 2007
  • Performance Limit for Optical Components Miller, D., A. B. 2006
  • Nonlinear Optical Effects in InxGa(1-x)As Quantum Systems for Saturable Absorbers Aldaz, R., I., Wiemer, M., W., Miller, D., A. B., Harris, J., S. 2006
  • Filtering and High-Speed Switching Characteristics of a C-band Rapidly Tunable Wavelength-Selective MSM Detector Ebrahimi, P., Chen, R., Willner, A., E., Miller, D., A. B. 2005
  • Photonic Crystal Device Sensitivity Analysis and Optimization with Wannier Basis Gradients Jiao, Y., Fan, S., Miller, D., A. B. 2005
  • MSM-Based Integrated CMOS Wavelength Tunable Optical Receiver chen, R., Chen, H., Miller, D., A., Ma, K., Harris, J., S. 2005
  • Linear differential electro-optic conversion of sampled voltage signals using a MSM and multiple quantum well modulators Chin, H., Urata, R., Ma, K., Miller, D., A. B., Harris Jr., J., S. 2005
  • Spectral shaping of electrically controlled MSM-based rapidly tunable photodetectors Chen, R., Fu, J., Miller, D., A. B., Harris Jr., J., S. 2005
  • Quantum-confined Stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates Kuo, Y., H, Lee, Y., Ren, S., Ge, Y., Miller, D., A. B., Harris, J., S. 2005
  • Opportunities for Optics in Integrated Circuits Applications Miller, D., A. B., Bhatnagar, A., Palermo, S., Emami-Neyestanak, A., Horowitz, M., A. 2005
  • Linear Electro-optic Conversion of Sampled Voltage Signals Using a Low-Temperature-Grown GaAs MSM and a Multiple Quantum Well Modulator chin, H., Urata, R., chen, R., Ma, K., Miller, D., A., Harris, J., S. 2005
  • Novel Electrically Controlled Rapidly Wavelength Selective Photodetection Using MSMs Chen, R., Miller, David, A. B., Ma, K., Harris Jr., James, S. 2004
  • Transit-time limited response from low capacitance CMOS photodetectors Bhatnagar, A., Latif, S., Miller, David, A. B. 2004
  • Photonic nanostructures for wavelength division multiplexing Gerken, M., Miller, David, A. B. 2004
  • Misalignment-tolerant surface normal low-voltage modulator for optical interconnects at 1.5 microns Helman, N., C., Roth, J., E., Bour, D., P., Miller, D., A. B. 2004
  • Monolithically-integrated vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate Aldaz, Rafael, I., Wiemer, Michael, W., Miller, David, A. B., Harris Jr., James, S. 2004
  • Low-Voltage Surface-Normal InGaAsP/InP Modulator for Optical Interconnects Helman, Noah, C., Roth, Jonathan, E., Altug, H., Miller, David, A. B., Bour, David, P. 2004
  • Monolithic Integration of GaAs Devices with Completely Fabricated Si CMOS Circuits Ma, K., Chen, R., Miller, David, A. B., Harris Jr., James, S. 2004
  • Photodiode-driven quantum-well modulators for C-band wavelength conversion and broadcasting Demir, H. V., Fidaner, O., Sabnis, Vijit, A., Harris Jr., James, S., Miller, David, A. B. 2004
  • Optical Interconnection and Clocking for Electronic Chips Bhatnagar, A., Miller, David, A. B. 2004
  • Novel passivation and planarization in the integration if III-V semiconductor devices Zheng, J., Hanberg, J., Demir, H. V., Sabnis, Vijit, A., Fidaner, O., Harris Jr., James, S., Miller, David, A.B 2004
  • Multimode interference device in 2-D non-uniform photonic crystal slab Jiao, Y., Yu, X., Fan, S., Miller, David, A. B. 2004
  • Adaptive Coherence-Sensing Imaging Spectrometer Barnhoefer, U., Bhalotra, S., R., Huang, Y., Miller, D., A. B. 2004
  • A 40-GHz-bandwidth, 4-bit, time-interleaved A/D converter using photoconductive sampling Nathawad, L. Y., Urata, R., Wooley, B. A., Miller, D. A. IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 2021-2030
  • Thin film technology based micro-Fourier spectrometer Knipp, D., Stiebig, H., Bhalotra, S., R., Kung, H., L., Miller, D., A. B. 2003
  • Scaling internet routers using optics Keslassy, I., Chuang, S., Yu, K., Miller, D., Horowitz, M., Solgaard, O. 2003
  • Novel optically-controlled optical switch based on intimate integration of surface-normal photodiode and waveguide electroabsorption modulators for wavelength conversion Demir, H. V., Sabnis, Vijit, A., Fidaner, O., Latif, S., Harris Jr., James, S., Miller, David, A. B. 2003
  • Novel Electrically Tunable MSM Photodetector for Resolving WDM Channels Chen, R., Chin, H., Miller, David, A. B. 2003
  • Designing for beam propagation in periodic and nonperiodic photonic nanostructures: extended Hamiltonian method Jiao, Y., Fan, S., Miller, David, A. B. 2003
  • Adaptive spectra-selective imaging by real-time photoconductor bias modulation Bhalotra, S., R., Roth, J., Jiao, Y., Kung, H., L., Urata, R., Miller, D., A. B. 2003
  • A 20 GHz bandwidth, 4 b photoconductive-sampling time-interleaved CMOS ADC Nathawad, L., Y., Urata, R., Wooley, B., A., Miller, D., A. B. 2003
  • Demonstration of a Wavelength Division Multiplexed Chip-to-Chip Optical Interconnect Nelson, B., E., Keeler, G., A., Agarwal, D., Helman, N., C., Miller, D., A. B. 2002
  • Adaptive coherence im aging system with time-domain filtering Jiao, Y., Bhalotra, S., R., Kung, H., L., Miller, D., A. B. 2002
  • Performance Enhancement of an Optical Interconnect Using Short Pulses from a Modelocked Diode Laser Keeler, G., A., Agarwal, D., Nelson, B., E., Helman, N., C., Miller, D., A. B. 2002
  • Optical Interconnect Operation with High Noise Immunity Agarwal, D., Keeler, G., A., Nelson, B., E., Helman, N., C., Miller, D., A. B. 2002
  • Cavity Resonance Tuning of Asymmetric Fabry-Perot MQW Modulators Following Flip-Chip Bonding to Silicon CMOS Keeler, G, A., Helman, N., C., Atanackovic, P., Miller, D., A. B. 2002
  • Thin-Film (DE)MUX based on Step-Like Spatial Beam Shifting Gerken, M., Miller, D., A. B. 2002
  • Thin-Film Wavelength Demultiplexer Based on Photonic Crystal and Group Velocity Effects Gerken, M., Nelson, B., E., Miller, D., A. B. 2002
  • Thin-Film (DE)MUX based on group-velocity effects Gerken, M., Miller, D., A. B. 2002
  • Adaptive Imaging Spectrometer in a Time-Domain Filtering Architecture Jiao, Y., Bhalotra, S., R., Kung, H., L., Miller, D., A. B. 2001
  • High-speed Sample and Hold using Low Temperature Grown GaAs MSM for Photonic A/D Conversion Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B., Harris, J., S. 2001
  • Real-time discrimination of spectra by time-domain adaptive filtering in a Fourier transform interferometer Bhalotra, S., R., Kung, H., L., Miller, D., A. B. 2001
  • Optical Pump-Probe Latency Measurements of Silicon CMOS Optical Interconnects Keeler, Gordon, A., Agarwal, D., Debaes, C., Nelson, Bianca, E., Helman, Noah, C., Miller, David, A. B. 2001
  • Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface-Normal Illuminated Waveguide Sabnis, V., Demir, H., V., Yairi, M., B., Miller, D., A. B., Harris Jr., J., S. 2001
  • Compact Standing-Wave Transform Spectrometer Based on Integrated MEMS Mirror and Thin-Film Photodetector Kung, H., L., Bhalotra, S., R., Miller, D., A. B. 2001
  • Compact transform spectrometer based on sampling a standing wave Kung, H., L., Bhalotra, S., R., Mansell, J., D., Miller, D., A. B. 2000
  • Spatio-temporal propagation of ultrashort pulses controlled by structured optical elements Piestun, R., Miller, D., A. B. 2000
  • Parallel-plate MEMS Mirror Design for Large On-resonance Displacement Bhalotra, S., R., Mansell, J., D., Kung, H., L., Miller, D., A. B. 2000
  • Rationale and Challenges for Optical Interconnects to Electronic Chips Miller, D., A. B. 2000
  • Transform Spectrometer Based on Measuring Periodicity of Talbot Self-Images Kung, H., L., Bhatnagar, A., Miller, D., A. B. 2000
  • Wavelength Division Multiplexing by Beam Shifting Using a Dielectric Stack as a One-Dimensional Photonic Crystal Nelson, B., E., Gerken, M., Miller, D., A. B., Piestun, R., Lin, C., C., Harris, J., S. 2000
  • Ultrafast Differential Sample and Hold using Low Temperature grown GaAs MSM for Photonic A/D Conversion Urata, R., Takahashi, R., Sabnis, V., A., Miller, D., A. B. 2000
  • Optical Remoting of Ultrafast Charge Packets Using Self-Linearized Modulation Chin, H., Atanackovic, P., Miller, D., A. B. 2000
  • Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20-ps repetition period Yairi, M., B., Demir, H., V., Coldren, C., W., Harris, J., S., Miller, D., A. B. 2000
  • Degrees of Freedom of an Electromagnetic Wave Piestun, R., Miller, D., A. B. 1999
  • Wavelength Division Multiplexed Optical Interconnects Using Femtosecond Optical Pulses Agarwal, D., Keeler, Gordon, A., Nelson, Bianca, E., Miller, David, A. B. 1999
  • Wavelength Monitor Based on Two Single Quantum Well Absorbers in a Standing Wave Kung, H., L., Miller, D., A. B., Carraresi, L., Cunningham, J., E., Jan, W., Y. 1999
  • Optically-Controlled Optical Gate Using a Double Diode Structure Yairi, Micah, B., Demir, Hilmi, V., Coldren, Chris, W., Miller, David, A. B., Harris Jr., James, S. 1999
  • Optical Interconnects Using Short Optical Pulses Keeler, Gordon, A., Nelson, Bianca, E., Agarwal, D., Miller, David, A. B. 1999
  • High-Speed Quantum Well Optoelectronic Gate Based on Diffuse Conduction Recovery Yairi, M., B., Coldren, C., W., Miller, D., A. B., Harris, J., S. edited by Chavel, P., Miller, David, A. B., Thienpont, H. 1998
  • Optics for Digital Information Processing Miller, D., A. B. edited by Miller, A., Ebrahimzadeh, M., Finlayson, D., M. 1998
  • Dense Two-Dimensional Integration of Optoelectronics and Electronics for Interconnections Miller, D., A. B. edited by Husain, A., Fallahi, M. 1998
  • Communicating with Waves Between Volumes -- How Many Different Spatial Channels Are There? Miller, D., A. B. edited by Chavel, P., Miller, David, A. B., Thienpont, H. 1998
  • 15 µm solder bonding of GaAs/AlGaAs MQW devices to MOSIS 0.8 µm CMOS for 1 Gb/s two-beam smart-pixel receiver/transmitter Woodward, T., K., Krishnamoorthy, A., V., Goossen, K., W., Walker, J., A., Lentine, A., L., Novotny, R., A., Miller, David, A.B 1996
  • Monolithic Integration of GaAs/AlGaAs Multiple Quantum Well Modulators and Silicon Metal-Oxide-Semiconductor Transistors Goossen, K., W., Walker, J., A., Cunningham, J., E., Jan, W., Y., Miller, D., A. B. 1993
  • Passively mode-locked Nd:YLF and Nd:YAG Lasers using a new intracavity antiresonant semiconductor Fabry-Perot Keller, U., Miller, D., A. B., Boyd, G., D., Chiu, T., H., Ferguson, J., F., Asom, M., T. edited by Chase, Lloyd, L., Pinto, Albert, A. 1992
  • Low Field Electroabsorption and Self-Biased Self-Electrooptics Effect Device Using Slightly Asymmetric Coupled Quantum Wells Goossen, K., W., Cunningham, J., E., Miller, D., A. B., Jan, W., Y., Lentine, A., L., Fox, A., M. 1991
  • Carrier Sweep-Out from Quantum Wells in an Electric Field Fox, A., M., Miller, D., A. B., Livescu, G., Cunningham, J., E., Jan, W., Y. 1991
  • Prospects for THz quantum well optoelectronics Schmitt-Rink, S., Chemla, D., S., Goossen, K., W., Knox, W., H., Miller, D., A. B. 1990
  • Quantum Well Devices for Optics in Digital Systems Miller, D., A. B. 1990
  • Physics and applications of quantum wells in optics Miller, D., A. B. 1989
  • Digital Optics Streibl, N., Brenner, K., H., Huang, A., Jahns, J., Jewell, J., Lohmann, A., W., Miller, David, A.B 1989
  • Batch-Fabricated Symmetric Self-Electro-Optic Effect Devices Chirovsky, L., M. F., D'Asaro, L., A., Tu, C., W., Lentine, A., L., Boyd, G., D., Miller, D., A. B. edited by Midwinter, J., E., Hinton, H., S. 1989
  • Properties of the electron-hole plasma in GaAs/GaAlAs multiple quantum wells Weber, C., Klingshirn, C., Chemla, D., S., Miller, D., A. B., Cunningham, J., Ell, C. edited by Zawadski, W. 1988
  • Optical Switching Devices: Some Basic Concepts, Optical Computing Miller, D., A. B. edited by Wherrett, B., S., Tooley, F., A. P. 1988
  • Quantum Well Electroabsorptive Devices: Physics and Applications, Optical Computing Miller, D., A. B. edited by Wherrett, B., S., Tooley, F., A. P. 1988
  • Photo-electronic optical nonlinearities in three - and quasi two - dimensional semiconductors, Nonlinear Optical Materials Klingshirn, C., Weber, C., Swoboda, H., E., Renner, R., Majumder, F., A., Kunz, M. 1988
  • Integrated quantum well modulator, field effect transistor, and optical detector Miller, D., A. B., Feuer, M., D., Chang, T., Y., Shunk, S., C., Henry, J., E., Burrows, D., J. 1988
  • Electric Field Dependence of Optical Absorption in Quantum Well Structures: Physics and Applications,Quantum Well and Superlattice Physics Miller, D., A. B. 1987
  • Electric Field Dependence of Optical Properties of Quantum Well Structures, Electro-optic and Photorefractive Materials Miller, D., A. B. edited by Gunter, P. 1986
  • Enhanced Electro-Absorption in GaAs/GaAlAs Multiple Quantum Wells and its Application to Opto-Electronic Devices Wood, T., H., Burrus, C., A., Miller, D., A. B., Chemla, D., S., Damen, T., C., Gossard, A., C. 1984
  • Long Wavelength, Room Temperature Observation of Excitons and 2 Dimensional Electron-hole States in Multiple Quantum Wells (MQWs) Wood, T., H., Burrus, C., A., Weiner, J., S., Chemla, D., S., Miller, D., A. B., Damen, T., C. 1984
  • Femtosecond Dynamics of Nonequilibrium Correlated Electron-Hole Pair Distributions in Room-Temperature GaAs Multiple Quantum Well Structures Knox, W., H., Fork, R., L., Downer, M., C., Miller, D., A. B., Chemla, D., S., Shank, C., V. edited by Auston, D., H., Eisenthal, K., B. 1984
  • Optical Logic and the Self Electro-optic Effect Device (SEED) Miller, D., A. B. 1984
  • Room Temperature Optical Nonlinear Absorption and Refraction in GaAs Multiple Quantum Wells, Optical Bistability 2 Miller, D., A. B., Chemla, D., S., Gossard, A., C., Smith, P., W. edited by Bowden, C., M., Gibbs, H., M., McCall, S., L. 1983
  • High-Speed Optical Modulation with GaAs/GaAlAs Quantum Wells in a p-i-n Diode Structure Wood, T., H., Burrus, C., A., Miller, D., A. B., Chemla, D., S., Damen, T., C., Gossard, A., C. 1983
  • Optical Bistability Miller, D., A. B. 1982
  • Saturation of Band-Tail Optical Absorption in InSb Miller, D., A. B. 1982
  • Optical Bistability, Trends in Physics 1981 Miller, D., A. B. 1982
  • Optical Bistability and Transphasor Action using Semiconductor Materials Smith, S., D., Miller, D., A. B. 1980
  • Optical Bistability and Transphasor Action in Semiconductors Miller, D., A. B., Seaton, C., T., Smith, S., D. 1980
  • Optical Bistability and Transistor Action in a Semiconductor Crystal Miller, D., A. B., Smith, S., D., Johnston, A. edited by Wherrett, B., S. 1979