David Miller
W.M. Keck Foundation Professor of Electrical Engineering, Emeritus
Web page: http://web.stanford.edu/people/dabm
Bio
David Miller (B. Sc., St. Andrews, Ph.D., Heriot-Watt) is the W. M. Keck Professor of Electrical Engineering Emeritus , and Professor by Courtesy of Applied Physics at Stanford University. Before Stanford, he was with Bell Laboratories from 1981 to 1996, as a department head from 1987. His interests include nanophotonics, quantum-well optoelectronics, and optics in information sensing, interconnects, and processing. He has published over 300 scientific papers, holds over 75 patents, has a Google h-index of over 110, is the author of the textbook Quantum Mechanics for Scientists and Engineers (Cambridge, 2008), and has taught open online quantum mechanics classes to over 70,000 students.
He was President of the IEEE LEOS (now Photonics Society) in 1995, and has served on Boards for various societies, companies, and university and government bodies.
He was awarded the OSA Adolph Lomb Medal and the R. W. Wood Prize, the ICO International Prize in Optics, the IEEE Third Millennium Medal, and the 2013 Carnegie Millennium Professorship. He is also a Fellow of AAAS, APS, OSA, IEEE, the Electromagnetics Academy, the Royal Society of London and the Royal Society of Edinburgh, holds two Honorary Doctorates, and is a Member of the US National Academies of Sciences and of Engineering.
Honors & Awards
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Adolph Lomb Medal, OSA (1986)
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Fellow, OSA (1988)
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Fellow, APS (1988)
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R. W. Wood prize, OSA (1988)
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International Prize in Optics, International Commission for Optics (1991)
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Fellow, Royal Society (1995)
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Fellow, IEEE (1995)
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Honorary Degree, Vrije Universiteit Brussel (1997)
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Third Millennium Medal, IEEE (2000)
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Fellow, Royal Society of Edinburgh (2002)
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Honorary Degree, Heriot-Watt University (2003)
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Member, National Academy of Sciences (2008)
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Member, National Academy of Engineering (2010)
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Carnegie Millennium Professorship, Carnegie (2013)
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Fellow, Electromagnetics Academy (2014)
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Fellow, AAAS (2024)
Boards, Advisory Committees, Professional Organizations
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Member, National Academy of Sciences (2008 - Present)
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Member, National Academy of Engineering (2010 - Present)
Professional Education
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PhD, Heriot-Watt University (1979)
Current Research and Scholarly Interests
David Miller’s research interests include the use of optics in switching, interconnection, communications, computing, and sensing systems, physics and applications of quantum well optics and optoelectronics, and fundamental features and limits for optics and nanophotonics in communications and information processing.
2024-25 Courses
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Independent Studies (8)
- Curricular Practical Training
APPPHYS 291 (Aut, Win, Spr, Sum) - Directed Studies in Applied Physics
APPPHYS 290 (Aut, Win, Spr, Sum) - Master's Thesis and Thesis Research
EE 300 (Aut, Win, Spr, Sum) - Special Studies and Reports in Electrical Engineering
EE 191 (Aut, Win, Spr, Sum) - Special Studies and Reports in Electrical Engineering
EE 391 (Aut, Win, Spr, Sum) - Special Studies and Reports in Electrical Engineering (WIM)
EE 191W (Aut, Win, Spr, Sum) - Special Studies or Projects in Electrical Engineering
EE 190 (Aut, Win, Spr, Sum) - Special Studies or Projects in Electrical Engineering
EE 390 (Aut, Win, Spr, Sum)
- Curricular Practical Training
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Prior Year Courses
2023-24 Courses
- Applied Quantum Mechanics II
EE 223 (Win)
2022-23 Courses
- Applied Quantum Mechanics I
EE 222, MATSCI 201 (Aut) - Applied Quantum Mechanics II
EE 223 (Win)
2021-22 Courses
- Applied Quantum Mechanics I
EE 222, MATSCI 201 (Aut) - Applied Quantum Mechanics II
EE 223 (Win)
- Applied Quantum Mechanics II
All Publications
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Measuring, processing, and generating partially coherent light with self-configuring optics.
Light, science & applications
2024; 13 (1): 260
Abstract
Optical phenomena always display some degree of partial coherence between their respective degrees of freedom. Partial coherence is of particular interest in multimodal systems, where classical and quantum correlations between spatial, polarization, and spectral degrees of freedom can lead to fascinating phenomena (e.g., entanglement) and be leveraged for advanced imaging and sensing modalities (e.g., in hyperspectral, polarization, and ghost imaging). Here, we present a universal method to analyze, process, and generate spatially partially coherent light in multimode systems by using self-configuring optical networks. Our method relies on cascaded self-configuring layers whose average power outputs are sequentially optimized. Once optimized, the network separates the input light into its mutually incoherent components, which is formally equivalent to a diagonalization of the input density matrix. We illustrate our method with numerical simulations of Mach-Zehnder interferometer arrays and show how this method can be used to perform partially coherent environmental light sensing, generation of multimode partially coherent light with arbitrary coherency matrices, and unscrambling of quantum optical mixtures. We provide guidelines for the experimental realization of this method, including the influence of losses, paving the way for self-configuring photonic devices that can automatically learn optimal modal representations of partially coherent light fields.
View details for DOI 10.1038/s41377-024-01622-y
View details for PubMedID 39300058
View details for PubMedCentralID PMC11413175
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Determining the optimal communication channels of arbitrary optical systems using integrated photonic processors
NATURE PHOTONICS
2023
View details for DOI 10.1038/s41566-023-01330-w
View details for Web of Science ID 001109031400001
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Why optics needs thickness.
Science (New York, N.Y.)
2023; 379 (6627): 41-45
Abstract
This study shows why and when optical systems need thickness as well as width or area. Wave diffraction explains the fundamental need for area or diameter of a lens or aperture to achieve some resolution or number of pixels in microscopes and cameras. This work demonstrates that if we know what the optics is to do, even before design, we can also deduce the minimum required thickness. This limit comes from diffraction combined with a concept called overlapping nonlocality C that can be deduced rigorously from just the mathematical description of what the device is to do. C expresses how much the input regions for different output regions overlap. This limit applies broadly to optics, from cameras to metasurfaces, and to wave systems generally.
View details for DOI 10.1126/science.ade3395
View details for PubMedID 36603071
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Inference in artificial intelligence with deep optics and photonics.
Nature
2020; 588 (7836): 39–47
Abstract
Artificial intelligence tasks across numerous applications require accelerators for fast and low-power execution. Optical computing systems may be able to meet these domain-specific needs but, despite half a century of research, general-purpose optical computing systems have yet to mature into a practical technology. Artificial intelligence inference, however, especially for visual computing applications, may offer opportunities for inference based on optical and photonic systems. In this Perspective, we review recent work on optical computing for artificial intelligence applications and discuss its promise and challenges.
View details for DOI 10.1038/s41586-020-2973-6
View details for PubMedID 33268862
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Programmable photonic circuits.
Nature
2020; 586 (7828): 207–16
Abstract
The growing maturity of integrated photonic technology makes it possible to build increasingly large and complex photonic circuits on the surface of a chip. Today, most of these circuits are designed for a specific application, but the increase in complexity has introduced a generation of photonic circuits that can be programmed using software for a wide variety of functions through a mesh of on-chip waveguides, tunable beam couplers and optical phase shifters. Here we discuss the state of this emerging technology, including recent developments in photonic building blocks and circuit architectures, as well as electronic control and programming strategies. We cover possible applications in linear matrix operations, quantum information processing and microwave photonics, and examine how these generic chips can accelerate the development of future photonic circuits by providing a higher-level platform for prototyping novel optical functionalities without the need for custom chip fabrication.
View details for DOI 10.1038/s41586-020-2764-0
View details for PubMedID 33028997
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Waves, modes, communications, and optics: a tutorial
ADVANCES IN OPTICS AND PHOTONICS
2019; 11 (3): 679–825
View details for DOI 10.1364/AOP.11.000679
View details for Web of Science ID 000488234600004
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Unscrambling light-automatically undoing strong mixing between modes
LIGHT-SCIENCE & APPLICATIONS
2017; 6
View details for DOI 10.1038/lsa.2017.110
View details for Web of Science ID 000424324200003
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Universal modal radiation laws for all thermal emitters
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
2017; 114 (17): 4336-4341
Abstract
We derive four laws relating the absorptivity and emissivity of thermal emitters. Unlike the original Kirchhoff radiation law derivations, these derivations include diffraction, and so are valid also for small objects, and can also cover nonreciprocal objects. The proofs exploit two recent approaches. First, we express all fields in terms of the mode-converter basis sets of beams; these sets, which can be uniquely established for any linear optical object, give orthogonal input beams that are coupled one-by-one to orthogonal output beams. Second, we consider thought experiments using universal linear optical machines, which allow us to couple appropriate beams and black bodies. Two of these laws can be regarded as rigorous extensions of previously known laws: One gives a modal version of a radiation law for reciprocal objects-the absorptivity of any input beam equals the emissivity into the "backward" (i.e., phase-conjugated) version of that beam; another gives the overall equality of the sums of the emissivities and the absorptivities for any object, including nonreciprocal ones. The other two laws, valid for reciprocal and nonreciprocal objects, are quite different from previous relations. One shows universal equivalence of the absorptivity of each mode-converter input beam and the emissivity into its corresponding scattered output beam. The other gives unexpected equivalences of absorptivity and emissivity for broad classes of beams. Additionally, we prove these orthogonal mode-converter sets of input and output beams are the ones that maximize absorptivities and emissivities, respectively, giving these beams surprising additional physical meaning.
View details for DOI 10.1073/pnas.1701606114
View details for Web of Science ID 000399995600040
View details for PubMedID 28396436
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Attojoule Optoelectronics for Low-Energy Information Processing and Communications
JOURNAL OF LIGHTWAVE TECHNOLOGY
2017; 35 (3): 346-396
View details for DOI 10.1109/JLT.2017.2647779
View details for Web of Science ID 000397724700002
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Perfect optics with imperfect components
OPTICA
2015; 2 (8): 747-750
View details for DOI 10.1364/OPTICA.2.000747
View details for Web of Science ID 000364484600016
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Establishing Optimal Wave Communication Channels Automatically
JOURNAL OF LIGHTWAVE TECHNOLOGY
2013; 31 (24): 3987-3994
View details for DOI 10.1109/JLT.2013.2278809
View details for Web of Science ID 000327721700002
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Reconfigurable add-drop multiplexer for spatial modes
OPTICS EXPRESS
2013; 21 (17): 20220-20229
Abstract
We show how a spatial mode can be extracted from a light beam, leaving the other orthogonal modes undisturbed, and allowing a new signal to be retransmitted on that mode. The method is self-aligning, avoids fundamental splitting losses, and uses only local feedback loops on controllable beam splitters and phase shifters. It could be implemented with Mach-Zehnder interferometers in planar optics. The method can be extended to multiple simultaneous mode extractions. As a spatial reconfigurable optical add-drop multiplexer, it is hitless, allowing reconfiguration without interrupting the transmission of any channel.
View details for DOI 10.1364/OE.21.020220
View details for Web of Science ID 000323830500075
View details for PubMedID 24105567
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Self-configuring universal linear optical component
PHOTONICS RESEARCH
2013; 1 (1): 1-15
View details for DOI 10.1364/PRJ.1.000001
View details for Web of Science ID 000209372300002
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Self-aligning universal beam coupler
OPTICS EXPRESS
2013; 21 (5): 6360-6370
Abstract
We propose a device that can take an arbitrary monochromatic input beam and, automatically and without any calculations, couple it into a single-mode guide or beam. Simple feedback loops from detectors to modulator elements allow the device to adapt to any specific input beam form. Potential applications include automatic compensation for misalignment and defocusing of an input beam, coupling of complex modes or multiple beams from fibers or free space to single-mode guides, and retaining coupling to a moving source. Straightforward extensions allow multiple different overlapping orthogonal input beams to be separated simultaneously to different single-mode guides with no splitting loss in principle. The approach is suitable for implementation in integrated optics platforms that offer elements such as phase shifters, Mach-Zehnder interferometers, grating couplers, and integrated monitoring detectors, and the basic approach is applicable in principle to other types of waves, such as microwaves or acoustics.
View details for PubMedID 23482206
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How complicated must an optical component be?
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION
2013; 30 (2): 238-251
Abstract
We analyze how complicated a linear optical component has to be if it is to perform one of a range of functions. Specifically, we devise an approach to evaluating the number of real parameters that must be specified in the device design or fabrication, based on the singular value decomposition of the linear operator that describes the device. This approach can be used for essentially any linear device, including space-, frequency-, or time-dependent systems, in optics, or in other linear wave problems. We analyze examples including spatial mode converters and various classes of wavelength demultiplexers. We consider limits on the functions that can be performed by simple optical devices, such as thin lenses, mirrors, gratings, modulators, and fixed optical filters, and discuss the potential for greater functionalities using modern nanophotonics.
View details for PubMedID 23456059
- Designing Linear Optical Components Optics in 2013 Special Issue, Optics and Photonics News, http://www.opnmagazine-digital.com/opn/december_2013#pg40 2013: 38
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Establishing optimal wave communication channels automatically
J. Lightwave Technol., http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6581883
2013; 31: 3987 – 3994
View details for DOI 10.1109/JLT.2013.2278809
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Self-configuring universal linear optical component
Photon. Res., http://www.opticsinfobase.org/prj/abstract.cfm?URI=prj-1-1-1
2013; 1: 1-15
View details for DOI 10.1364/PRJ.1.000001
- Reconfigurable add-drop multiplexer for spatial modes Opt. Express,http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-17-20220 2013; 21: 20220-20229
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All linear optical devices are mode converters
OPTICS EXPRESS
2012; 20 (21): 23985-23993
Abstract
We show that every linear optical component can be completely described as a device that converts one set of orthogonal input modes, one by one, to a matching set of orthogonal output modes. This result holds for any linear optical structure with any specific variation in space and/or time of its structure. There are therefore preferred orthogonal "mode converter" basis sets of input and output functions for describing any linear optical device, in terms of which the device can be described by a simple diagonal operator. This result should help us understand what linear optical devices we can and cannot make. As illustrations, we use this approach to derive a general expression for the alignment tolerance of an efficient mode coupler and to prove that loss-less combining of orthogonal modes is impossible.
View details for PubMedID 23188365
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Energy consumption in optical modulators for interconnects
OPTICS EXPRESS
2012; 20 (6): A293-A308
Abstract
We analyze energy consumption in optical modulators operated in depletion and intended for low-power interconnect applications. We include dynamic dissipation from charging modulator capacitance and net energy consumption from absorption and photocurrent, both in reverse and small forward bias. We show that dynamic dissipation can be independent of static bias, though only with specific kinds of bias circuits. We derive simple expressions for the effects of photocurrent on energy consumption, valid in both reverse and small forward bias. Though electroabsorption modulators with large reverse bias have substantial energy penalties from photocurrent dissipation, we argue that modulator diodes with thin depletion regions and operating in small reverse and/or forward bias could have little or no such photocurrent energy penalty, even conceivably being more energy-efficient than an ideal loss-less modulator.
View details for PubMedID 22418679
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Device Requirements for Optical Interconnects to Silicon Chips
PROCEEDINGS OF THE IEEE
2009; 97 (7): 1166-1185
View details for DOI 10.1109/JPROC.2009.2014298
View details for Web of Science ID 000267378800003
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Integrated Photonic Processors for Optical Free-Space Links [Invited Paper]
IEEE. 2024
View details for Web of Science ID 001242671400036
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Reconfigurable Photonic Integrated Circuit for All-Optical Matrix Inversion
SPRINGER INTERNATIONAL PUBLISHING AG. 2024: 477-483
View details for DOI 10.1007/978-3-031-63378-2_78
View details for Web of Science ID 001290811400077
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Scalable low-latency optical phase sensor array
OPTICA
2023; 10 (9): 1165-1172
View details for DOI 10.1364/OPTICA.494612
View details for Web of Science ID 001167720400001
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Experimentally realized in situ backpropagation for deep learning in photonic neural networks.
Science (New York, N.Y.)
2023; 380 (6643): 398-404
Abstract
Integrated photonic neural networks provide a promising platform for energy-efficient, high-throughput machine learning with extensive scientific and commercial applications. Photonic neural networks efficiently transform optically encoded inputs using Mach-Zehnder interferometer mesh networks interleaved with nonlinearities. We experimentally trained a three-layer, four-port silicon photonic neural network with programmable phase shifters and optical power monitoring to solve classification tasks using "in situ backpropagation," a photonic analog of the most popular method to train conventional neural networks. We measured backpropagated gradients for phase-shifter voltages by interfering forward- and backward-propagating light and simulated in situ backpropagation for 64-port photonic neural networks trained on MNIST image recognition given errors. All experiments performed comparably to digital simulations ([Formula: see text]94% test accuracy), and energy scaling analysis indicated a route to scalable machine learning.
View details for DOI 10.1126/science.ade8450
View details for PubMedID 37104594
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Power monitoring in a feedforward photonic network using two output detectors
NANOPHOTONICS
2023
View details for DOI 10.1515/nanoph-2022-0527
View details for Web of Science ID 000909801000001
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Programmable Photonic Architecture Solving Systems of Ordinary Differential Equations
IEEE. 2023
View details for DOI 10.1109/PSC57974.2023.10297288
View details for Web of Science ID 001098977900075
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Automatic setting of multiple FSO orthogonal communication channels between photonic chips
IEEE. 2023
View details for Web of Science ID 001009232500489
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Electromagnetic Information Theory in Phase-Space: A Quantum Tunnelling Approach
IEEE. 2023
View details for DOI 10.1109/VTC2023-Spring57618.2023.10200598
View details for Web of Science ID 001054797202030
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Quantitative phase contrast imaging with a nonlocal angle-selective metasurface.
Nature communications
2022; 13 (1): 7848
Abstract
Phase contrast microscopy has played a central role in the development of modern biology, geology, and nanotechnology. It can visualize the structure of translucent objects that remains hidden in regular optical microscopes. The optical layout of a phase contrast microscope is based on a 4 f image processing setup and has essentially remained unchanged since its invention by Zernike in the early 1930s. Here, we propose a conceptually new approach to phase contrast imaging that harnesses the non-local optical response of a guided-mode-resonator metasurface. We highlight its benefits and demonstrate the imaging of various phase objects, including biological cells, polymeric nanostructures, and transparent metasurfaces. Our results showcase that the addition of this non-local metasurface to a conventional microscope enables quantitative phase contrast imaging with a 0.02π phase accuracy. At a high level, this work adds to the growing body of research aimed at the use of metasurfaces for analog optical computing.
View details for DOI 10.1038/s41467-022-34197-6
View details for PubMedID 36543788
View details for PubMedCentralID PMC9772391
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Multi-dimensional data transmission using inverse-designed silicon photonics and microcombs.
Nature communications
2022; 13 (1): 7862
Abstract
The use of optical interconnects has burgeoned as a promising technology that can address the limits of data transfer for future high-performance silicon chips. Recent pushes to enhance optical communication have focused on developing wavelength-division multiplexing technology, and new dimensions of data transfer will be paramount to fulfill the ever-growing need for speed. Here we demonstrate an integrated multi-dimensional communication scheme that combines wavelength- and mode- multiplexing on a silicon photonic circuit. Using foundry-compatible photonic inverse design and spectrally flattened microcombs, we demonstrate a 1.12-Tb/s natively error-free data transmission throughout a silicon nanophotonic waveguide. Furthermore, we implement inverse-designed surface-normal couplers to enable multimode optical transmission between separate silicon chips throughout a multimode-matched fibre. All the inverse-designed devices comply with the process design rules for standard silicon photonic foundries. Our approach is inherently scalable to a multiplicative enhancement over the state of the art silicon photonic transmitters.
View details for DOI 10.1038/s41467-022-35446-4
View details for PubMedID 36543782
View details for PubMedCentralID PMC9772188
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Spatially resolving amplitude and phase of light with a reconfigurable photonic integrated circuit
OPTICA
2022; 9 (8): 939-946
View details for DOI 10.1364/OPTICA.458727
View details for Web of Science ID 000843612600015
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Separating arbitrary free-space beams with an integrated photonic processor.
Light, science & applications
2022; 11 (1): 197
Abstract
Free-space optics naturally offers multiple-channel communications and sensing exploitable in many applications. The different optical beams will, however, generally be overlapping at the receiver, and, especially with atmospheric turbulence or other scattering or aberrations, the arriving beam shapes may not even be known in advance. We show that such beams can be still separated in the optical domain, and simultaneously detected with negligible cross-talk, even if they share the same wavelength and polarization, and even with unknown arriving beam shapes. The kernel of the adaptive multibeam receiver presented in this work is a programmable integrated photonic processor that is coupled to free-space beams through a two-dimensional array of optical antennas. We demonstrate separation of beam pairs arriving from different directions, with overlapping spatial modes in the same direction, and even with mixing between the beams deliberately added in the path. With the circuit's optical bandwidth of more than 40nm, this approach offers an enabling technology for the evolution of FSO from single-beam to multibeam space-division multiplexed systems in a perturbed environment, which has been a game-changing transition in fiber-optic systems.
View details for DOI 10.1038/s41377-022-00884-8
View details for PubMedID 35787626
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Self-configuring programmable photonics for processing, communications and sensing
IEEE. 2022
View details for Web of Science ID 000828152500303
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Photonic chips embrace piezo-optomechanics
NATURE PHOTONICS
2021
View details for DOI 10.1038/s41566-021-00932-6
View details for Web of Science ID 000731820900005
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Coherent self-control of free-space optical beams with integrated silicon photonic meshes
PHOTONICS RESEARCH
2021; 9 (11): 2196-2204
View details for DOI 10.1364/PRJ.428680
View details for Web of Science ID 000713930800008
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Development of Quantum Interconnects (QuICs) for Next-Generation Information Technologies
PRX QUANTUM
2021; 2 (1)
View details for DOI 10.1103/PRXQuantum.2.017002
View details for Web of Science ID 000674685900002
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Wavelength-Division Multiplexed Optical Cryptocurrency
IEEE. 2021
View details for Web of Science ID 000831479800115
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Self-Configuring Silicon-Photonic Receiver for Multimode Free Space Channels
IEEE. 2021
View details for DOI 10.1109/GFP51802.2021.9674015
View details for Web of Science ID 000783824500084
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Self-Configuring Complex Photonic Circuits
IEEE. 2021
View details for DOI 10.1109/GFP51802.2021.9673864
View details for Web of Science ID 000783824500023
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Multimode Free Space Optical Link Enabled by SiP Integrated Meshes
IEEE. 2021
View details for DOI 10.1109/ECOC52684.2021.9606098
View details for Web of Science ID 000821936000221
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Getting to femtojoule optics - what physics and what technology?
IEEE. 2021
View details for Web of Science ID 000698978300559
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Quantitative Phase Contrast Imaging using Guided-mode Resonator Devices
IEEE. 2021
View details for Web of Science ID 000831479803156
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MEMS Photonic Networks For Parallelized Matrix Multiplication Using Wavelength-Division Multiplexing
IEEE. 2021
View details for Web of Science ID 000831479800025
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Parallel Programming of an Arbitrary Feedforward Photonic Network
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2020; 26 (5)
View details for DOI 10.1109/JSTQE.2020.2997849
View details for Web of Science ID 000557444000001
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Adapting Mach-Zehnder Mesh Equalizers in Direct-Detection Mode-Division-Multiplexed Links
JOURNAL OF LIGHTWAVE TECHNOLOGY
2020; 38 (4): 723–35
View details for DOI 10.1109/JLT.2019.2952060
View details for Web of Science ID 000516613400004
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Parallel Fault-Tolerant Programming and Optimization of Photonic Neural Networks
IEEE. 2020
View details for Web of Science ID 000612090001197
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Saving Energy and Increasing Density in Information Processing Using Photonics
IEEE. 2020
View details for Web of Science ID 000676346200026
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Experimental band structure spectroscopy along a synthetic dimension.
Nature communications
2019; 10 (1): 3122
Abstract
There has been significant recent interest in synthetic dimensions, where internal degrees of freedom of a particle are coupled to form higher-dimensional lattices in lower-dimensional physical structures. For these systems, the concept of band structure along the synthetic dimension plays a central role in their theoretical description. Here we provide a direct experimental measurement of the band structure along the synthetic dimension. By dynamically modulating a resonator at frequencies commensurate with its mode spacing, we create a periodically driven lattice of coupled modes in the frequency dimension. The strength and range of couplings can be dynamically reconfigured by changing the modulation amplitude and frequency. We show theoretically and demonstrate experimentally that time-resolved transmission measurements of this system provide a direct readout of its band structure. We also realize long-range coupling, gauge potentials and nonreciprocal bands by simply incorporating additional frequency drives, enabling great flexibility in band structure engineering.
View details for DOI 10.1038/s41467-019-11117-9
View details for PubMedID 31311928
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Matrix Optimization on Universal Unitary Photonic Devices
PHYSICAL REVIEW APPLIED
2019; 11 (6)
View details for DOI 10.1103/PhysRevApplied.11.064044
View details for Web of Science ID 000473041300001
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Experimental Demonstration of Dynamical Input Isolation in Nonadiabatically Modulated Photonic Cavities
ACS PHOTONICS
2019; 6 (1): 162–69
View details for DOI 10.1021/acsphotonics.8b01310
View details for Web of Science ID 000456350400023
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Experimental Band Structure Spectroscopy along the Synthetic Dimension
IEEE. 2019
View details for Web of Science ID 000482226300311
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Ten-million years of activity within the Eastern California Shear Zone from U–Pb dating of fault-zone opal
Earth and Planetary Science Letters
2019; 521: 37-45
View details for DOI 10.1016/j.epsl.2019.05.047
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Unscrambling light-automatically undoing strong mixing between modes.
Light, science & applications
2017; 6 (12): e17110
Abstract
Propagation of light beams through scattering or multimode systems may lead to the randomization of the spatial coherence of the light. Although information is not lost, its recovery requires a coherent interferometric reconstruction of the original signals, which have been scrambled into the modes of the scattering system. Here we show that we can automatically unscramble optical beams that have been arbitrarily mixed in a multimode waveguide, undoing the scattering and mixing between the spatial modes through a mesh of silicon photonics tuneable beam splitters. Transparent light detectors integrated in a photonic chip are used to directly monitor the evolution of each mode along the mesh, allowing sequential tuning and adaptive individual feedback control of each beam splitter. The entire mesh self-configures automatically through a progressive tuning algorithm and resets itself after significantly perturbing the mixing, without turning off the beams. We demonstrate information recovery by the simultaneous unscrambling, sorting and tracking of four mixed modes, with residual cross-talk of -20 dB between the beams. Circuit partitioning assisted by transparent detectors enables scalability to meshes with a higher port count and to a higher number of modes without a proportionate increase in the control complexity. The principle of self-configuring and self-resetting in optical systems should be applicable in a wide range of optical applications.
View details for DOI 10.1038/lsa.2017.110
View details for PubMedID 30167222
View details for PubMedCentralID PMC6062024
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Better choices than optical angular momentum multiplexing for communications
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
2017; 114 (46): E9755–E9756
View details for DOI 10.1073/pnas.1712762114
View details for Web of Science ID 000415173300003
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Better choices than optical angular momentum multiplexing for communications.
Proceedings of the National Academy of Sciences of the United States of America
2017; 114 (46): E9755-E9756
View details for DOI 10.1073/pnas.1712762114
View details for PubMedID 29093167
View details for PubMedCentralID PMC5699074
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Arbitrary and self-configuring photonic circuits for sensing and processing
IEEE. 2017: 51–52
View details for Web of Science ID 000425928700025
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Attojoule optoelectronics-saving even more energy with optics
IEEE. 2017: 89–90
View details for Web of Science ID 000426873700044
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Applied Optics. Sorting out light.
Science
2015; 347 (6229): 1423-1424
View details for DOI 10.1126/science.aaa6801
View details for PubMedID 25814572
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Design of large scale plasmonic nanoslit arrays for arbitrary mode conversion and demultiplexing.
Optics express
2014; 22 (1): 646-660
Abstract
We present an iterative design method for the coupling and the mode conversion of arbitrary modes to focused surface plasmons using a large array of aperiodically randomly located slits in a thin metal film. As the distance between the slits is small and the number of slits is large, significant mutual coupling occurs between the slits which makes an accurate computation of the field scattered by the slits difficult. We use an accurate modal source radiator model to efficiently compute the fields in a significantly shorter time compared with three-dimensional (3D) full-field rigorous simulations, so that iterative optimization is efficiently achieved. Since our model accounts for mutual coupling between the slits, the scattering by the slits of both the source wave and the focused surface plasmon can be incorporated in the optimization scheme. We apply this method to the design of various types of couplers for arbitrary fiber modes and a mode demultiplexer that focuses three orthogonal fiber modes to three different foci. Finally, we validate our design results using fully vectorial 3D finite-difference time-domain (FDTD) simulations.
View details for DOI 10.1364/OE.22.000646
View details for PubMedID 24515024
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Design of large scale plasmonic nanoslit arrays for arbitrary mode conversion and demultiplexing
Conference on Nanophotonics V
SPIE-INT SOC OPTICAL ENGINEERING. 2014
View details for DOI 10.1117/12.2052104
View details for Web of Science ID 000346237300023
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Surface-Normal Ge/SiGe Asymmetric Fabry-Perot Optical Modulators Fabricated on Silicon Substrates
JOURNAL OF LIGHTWAVE TECHNOLOGY
2013; 31 (24): 3995-4003
View details for DOI 10.1109/JLT.2013.2279174
View details for Web of Science ID 000327721700003
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Modal Source Radiator Model for Arbitrary Two-Dimensional Arrays of Subwavelength Apertures on Metal Films
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2013; 19 (3)
View details for DOI 10.1109/JSTQE.2012.2229383
View details for Web of Science ID 000322125100012
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Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths
OPTICS EXPRESS
2013; 21 (8): 10228-10233
Abstract
We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.
View details for DOI 10.1364/OE.21.010228
View details for PubMedID 23609731
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Energy-per-Bit Limits in Plasmonic Integrated Photodetectors
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2013; 19 (2)
View details for DOI 10.1109/JSTQE.2012.2227687
View details for Web of Science ID 000317781200014
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Light emission from strained germanium
NATURE PHOTONICS
2013; 7 (3): 162-163
View details for Web of Science ID 000316154700003
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Highly Tailored Computational Electromagnetics Methods for Nanophotonic Design and Discovery
PROCEEDINGS OF THE IEEE
2013; 101 (2): 484-493
View details for DOI 10.1109/JPROC.2012.2207649
View details for Web of Science ID 000313724400021
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Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
OPTICS EXPRESS
2013; 21 (1): 867-876
Abstract
We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.
View details for PubMedID 23388980
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B-CALM: AN OPEN-SOURCE MULTI-GPU-BASED 3D-FDTD WITH MULTI-POLE DISPERSION FOR PLASMONICS
PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER
2013; 138: 467-478
View details for DOI 10.2528/PIER13030606
View details for Web of Science ID 000317963200031
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Attojoule optoelectronics - why and how
IEEE-Photonics-Society Summer Topical Meeting
IEEE. 2013: 28–29
View details for Web of Science ID 000333963600014
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Ge/SiGe Quantum Well Asymmetric Fabry-Perot Modulators on Silicon Substrates
IEEE-Photonics-Society Summer Topical Meeting
IEEE. 2013: 248–249
View details for Web of Science ID 000333963600121
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Separating arbitrary overlapping spatial modes losslessly and without calculations
IEEE-Photonics-Society Summer Topical Meeting
IEEE. 2013: 101–102
View details for Web of Science ID 000333963600047
- Nanoscale Integrated Planar Multispectral Image Sensors 2013
- Separating arbitrary overlapping spatial modes losslessly and without calculations IEEE Photonics Society Summer Topical Meetings, Space Division Multiplexing for Optical Communications 2013
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Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths
2nd IEEE-Photonics-Society Optical Interconnects Conference
IEEE. 2013: 25–26
View details for Web of Science ID 000325206200013
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Energy-per-bit and noise limits in plasmonic intergrated photodetectors
Conference on Integrated Optics - Physics and Simulations
SPIE-INT SOC OPTICAL ENGINEERING. 2013
View details for DOI 10.1117/12.2017841
View details for Web of Science ID 000323312700019
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Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators
OPTICS EXPRESS
2012; 20 (28): 29164-29173
Abstract
We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 ?m diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.
View details for Web of Science ID 000314914500005
View details for PubMedID 23388742
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Ultra-compact photonic crystal waveguide spatial mode converter and its connection to the optical diode effect
OPTICS EXPRESS
2012; 20 (27): 28388-28397
Abstract
We design an extremely compact photonic crystal waveguide spatial mode converter which converts the fundamental even mode to the higher order odd mode with nearly 100% efficiency. We adapt a previously developed design and optimization process that allows these types of devices to be designed in a matter of minutes. We also present an extremely compact optical diode device and clarify its general properties and its relation to spatial mode converters. Finally, we connect the results here to a general theory on the complexity of optical designs.
View details for PubMedID 23263074
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Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications
OPTICAL MATERIALS EXPRESS
2012; 2 (10): 1336-1342
View details for Web of Science ID 000309507000005
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Self-aligned silicon fins in metallic slits as a platform for planar wavelength-selective nanoscale resonant photodetectors
OPTICS EXPRESS
2012; 20 (20): 22735-22742
Abstract
We propose and demonstrate a novel nanoscale resonant metal-semiconductor-metal (MSM) photodetector structure based on silicon fins self-aligned to metallic slits. This geometry allows the center wavelength of the photodetector's spectral response to be controlled by the silicon fin width, allowing multiple detectors, each sensitive to a different wavelength, to be fabricated in a single-step process. In addition, the detectors are highly efficient with simulations showing ~67% of the light (λ = 800 nm) incident on the silicon fin being absorbed in a region of thickness ~170 nm whereas the absorption length at the same wavelength is ~10 µm. This approach is promising for the development of multispectral imaging sensors and low-capacitance photodetectors for short-range optical interconnects.
View details for PubMedID 23037424
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B-CALM: An open-source GPU-based 3D-FDTD with multi-pole dispersion for plasmonics
11th International Conference on Numerical Simulation of Optoelectronic Devices in Optical and Quantum Electronics (NUSOD)
SPRINGER. 2012: 285–90
View details for DOI 10.1007/s11082-012-9558-z
View details for Web of Science ID 000304625500032
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A micromachining-based technology for enhancing germanium light emission via tensile strain
NATURE PHOTONICS
2012; 6 (6): 398-405
View details for DOI 10.1038/NPHOTON.2012.111
View details for Web of Science ID 000304598200018
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Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated With SOI Waveguides
IEEE PHOTONICS TECHNOLOGY LETTERS
2012; 24 (6): 461-463
View details for DOI 10.1109/LPT.2011.2181496
View details for Web of Science ID 000300579600013
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Investigation of Limits to the Optical Performance of Asymmetric Fabry-Perot Electroabsorption Modulators
IEEE JOURNAL OF QUANTUM ELECTRONICS
2012; 48 (2): 198-209
View details for DOI 10.1109/JQE.2011.2167960
View details for Web of Science ID 000299429100014
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Simple Electroabsorption Calculator for Designing 1310 nm and 1550 nm Modulators Using Germanium Quantum Wells
IEEE JOURNAL OF QUANTUM ELECTRONICS
2012; 48 (2): 187-197
View details for DOI 10.1109/JQE.2011.2170961
View details for Web of Science ID 000299429100013
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B-CALM: An Open-Source GPU-based 3D-FDTD with Multi-Pole Dispersion for Plasmonics
Conference on Optical Modelling and Design II
SPIE-INT SOC OPTICAL ENGINEERING. 2012
View details for DOI 10.1117/12.922393
View details for Web of Science ID 000305507900031
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Routing and photodetection in subwavelength plasmonic slot waveguides
NANOPHOTONICS
2012; 1 (1): 9-16
View details for DOI 10.1515/nanoph-2012-0002
View details for Web of Science ID 000208897700003
- Self-aligned Silicon Fins in Metallic Slits as a Platform for Planar Tunable Nanoscale Resonant Photodetectors 2012
- Routing and Detection of Light on Deeply Subwavelength scale in Two-conductor Metallic Slot Waveguides 2012
- Routing and Photodetection in Subwavelength Plasmonic Slot Waveguides Nanophotonics 2012; 1: 9-16
- Energy use in optical modulators 2012
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Strained germanium thin film membrane on silicon substrate for optoelectronics
OPTICS EXPRESS
2011; 19 (27): 25866-25872
Abstract
This work presents a novel method to introduce a sustainable biaxial tensile strain larger than 1% in a thin Ge membrane using a stressor layer integrated on a Si substrate. Raman spectroscopy confirms 1.13% strain and photoluminescence shows a direct band gap reduction of 100meV with enhanced light emission efficiency. Simulation results predict that a combination of 1.1% strain and heavy n(+) doping reduces the required injected carrier density for population inversion by over a factor of 60. We also present the first highly strained Ge photodetector, showing an excellent responsivity well beyond 1.6um.
View details for PubMedID 22274174
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Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics
OPTICAL MATERIALS EXPRESS
2011; 1 (6): 1121-1126
View details for Web of Science ID 000299048700007
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Indirect absorption in germanium quantum wells
AIP ADVANCES
2011; 1 (3)
View details for DOI 10.1063/1.3646149
View details for Web of Science ID 000302139600064
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Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium or Germanium Quantum Wells With Silicon-on-Insulator Waveguides
IEEE PHOTONICS JOURNAL
2011; 3 (4): 739-747
View details for DOI 10.1109/JPHOT.2011.2162644
View details for Web of Science ID 000294134600001
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Multiple-Wavelength Focusing of Surface Plasmons with a Nonperiodic Nanoslit Coupler
NANO LETTERS
2011; 11 (7): 2693-2698
Abstract
A novel type of multiple-wavelength focusing plasmonic coupler based on a nonperiodic nanoslit array is designed and experimentally demonstrated. An array of nanoslits patterned on a thin metal film is used to couple free-space light into surface plasmon polaritons (SPPs) and simultaneously focus different-wavelength SPPs into arbitrary predefined locations in the two-dimensional plane. We design and fabricate a compact triplexer on a glass substrate with an integrated silicon photodetector. The photocurrent spectra demonstrate that the incident light is effectively coupled to SPPs and routed into three different focal spots depending on the wavelength. The proposed scheme provides a simple method of building wavelength-division multiplexing and spectral filtering elements, integrated with other plasmonic and optoelectronic devices.
View details for DOI 10.1021/nl200938h
View details for Web of Science ID 000292849400022
View details for PubMedID 21627101
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Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition
APPLIED PHYSICS LETTERS
2011; 98 (15)
View details for DOI 10.1063/1.3574912
View details for Web of Science ID 000289580800008
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Design methodology for compact photonic-crystal-based wavelength division multiplexers
OPTICS LETTERS
2011; 36 (4): 591-593
Abstract
We present an extremely compact wavelength division multiplexer design, as well as a general framework for designing and optimizing frequency selective devices embedded in photonic crystals satisfying arbitrary design constraints. Our method is based on the Dirichlet-to-Neumman simulation method and uses low rank updates to the system to efficiently scan through many device designs.
View details for Web of Science ID 000287395500055
View details for PubMedID 21326466
- Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium Quantum Wells With Silicon-on-Insulator Waveguides IEEE Photonics Journal 2011; 3 (4): 739-747
- On-Chip Optical Propagation and Photodetection in Nanometer-Scale Two-Conductor Plasmonic Waveguides 2011
- A Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated with SOI Waveguides 2011
- Ge Quantum Well Resonator Modulators 2011
- Simple Electroabsorption Calculator for Germanium Quantum Well Devices 2011
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Measurement and modeling of ultrafast carrier dynamics and transport in germanium/silicon-germanium quantum wells
OPTICS EXPRESS
2010; 18 (25): 25596-25607
Abstract
We measure the intervalley scattering time of electrons in the conduction band of Ge quantum wells from the direct Γ valley to the indirect L valley to be ~185 fs using a pump-probe setup at 1570 nm. We relate this to the width of the exciton peak seen in the absorption spectra of this material, and show that these quantum wells could be used as a fast saturable absorber with a saturation fluence between 0.11 and 0.27 pJ/μm. We also observe field screening by photogenerated carriers in the material on longer timescales. We model this field screening by incorporating carrier escape from the quantum wells, drift across the intrinsic region, and recovery of the applied voltage through diffusive conduction.
View details for PubMedID 21164905
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Optical interconnects to electronic chips
APPLIED OPTICS
2010; 49 (25): F59-F70
Abstract
Optical interconnects are progressively replacing wires at shorter and shorter distances in information processing machines. This paper summarizes the progress toward and prospects for the penetration of optics all the way to the silicon chip.
View details for PubMedID 20820203
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The role of optics in computing
NATURE PHOTONICS
2010; 4 (7): 406-406
View details for DOI 10.1038/nphoton.2010.163
View details for Web of Science ID 000279331800003
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Are optical transistors the logical next step?
NATURE PHOTONICS
2010; 4 (1): 3-5
View details for Web of Science ID 000273710700002
- Surface-Normal, Asymmetric Fabry-Perot Quantum-Confined Stark Effect Electro-Absorption Modulator on Silicon 2010
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Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination
JOURNAL OF LIGHTWAVE TECHNOLOGY
2009; 27 (23): 5451-5460
View details for DOI 10.1109/JLT.2009.2032248
View details for Web of Science ID 000270946600006
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High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration
IEEE ELECTRON DEVICE LETTERS
2009; 30 (11): 1161-1163
View details for DOI 10.1109/LED.2009.2030905
View details for Web of Science ID 000271151500015
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Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si
APPLIED PHYSICS LETTERS
2009; 95 (16)
View details for DOI 10.1063/1.3254181
View details for Web of Science ID 000271218200006
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Electrically controlled modulation in a photonic crystal nanocavity
OPTICS EXPRESS
2009; 17 (18): 15409-15419
Abstract
We describe a compact modulator based on a photonic crystal nanocavity whose resonance is electrically controlled through an integrated p-i-n junction. The sub-micron size of the nanocavity promises very low capacitance, high bandwidth, and efficient on-chip integration in optical interconnects.
View details for PubMedID 19724539
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Modeling of Plasmonic Waveguide Components and Networks
JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE
2009; 6 (8): 1808-1826
View details for DOI 10.1166/jctn.2009.1244
View details for Web of Science ID 000269887100006
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Low capacitance CMOS silicon photodetectors for optical clock injection
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
2009; 95 (4): 1129-1135
View details for DOI 10.1007/s00339-009-5122-5
View details for Web of Science ID 000266072800025
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Metal-dielectric-metal plasmonic waveguide devices for manipulating light at the nanoscale
CHINESE OPTICS LETTERS
2009; 7 (4): 302-308
View details for DOI 10.3788/COL20090704.0302
View details for Web of Science ID 000266970900011
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Metallic nanodevices for chip-scale optical interconnects
JOURNAL OF NANOPHOTONICS
2009; 3
View details for DOI 10.1117/1.3111849
View details for Web of Science ID 000272413400001
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Modal analysis and coupling in metal-insulator-metal waveguides
PHYSICAL REVIEW B
2009; 79 (3)
View details for DOI 10.1103/PhysRevB.79.035120
View details for Web of Science ID 000262978200055
- Plasmonic device in silicon CMOS Electronics Lett. 2009; 45: 706-708
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High Efficiency Monolithic Photodetectors for Integrated Optoelectronics in the Near Infrared
22nd Annual Meeting of the IEEE-Photonics-Society
IEEE. 2009: 303–304
View details for Web of Science ID 000279577600156
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Transmission Line and Equivalent Circuit Models for Plasmonic Waveguide Components
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2008; 14 (6): 1462-1472
View details for DOI 10.1109/JSTQE.2008.924431
View details for Web of Science ID 000262220500008
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Characteristic Impedance Model for Plasmonic Metal Slot Waveguides
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2008; 14 (6): 1473-1478
View details for DOI 10.1109/JSTQE.2008.917534
View details for Web of Science ID 000262220500009
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Optical spatial quantization for higher performance analog-to-digital conversion
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
2008; 56 (9): 2143-2150
View details for DOI 10.1109/TMTT.2008.2002230
View details for Web of Science ID 000259192500017
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Material properties of Si-Ge/Ge quantum wells
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2008; 14 (4): 1082-1089
View details for DOI 10.1109/JSTQE.2008.918935
View details for Web of Science ID 000258285000015
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Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna
NATURE PHOTONICS
2008; 2 (4): 226-229
View details for DOI 10.1038/nphoton.2008.30
View details for Web of Science ID 000255247300012
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Wideband, low driving voltage traveling-wave Mach-Zehnder modulator for RF photonics
IEEE PHOTONICS TECHNOLOGY LETTERS
2008; 20 (5-8): 517-519
View details for DOI 10.1109/LPT.2008.918889
View details for Web of Science ID 000257952800064
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Optical switching based on high-speed phased array optical beam steering
APPLIED PHYSICS LETTERS
2008; 92 (1)
View details for DOI 10.1063/1.2831005
View details for Web of Science ID 000252284200192
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C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing
ELECTRONICS LETTERS
2008; 44 (1): 49-U63
View details for Web of Science ID 000252959400032
- Integrated Photodetectors in Metal Slot Plasmonic Waveguides Plasmonics and Metamaterials (META) 2008, OSA Fall Optics and Photonics Congress 2008
- Plasmonic Device in CMOS 2008
- Spectral Analysis of Scattering in Metal-Insulator-Metal Waveguides and Related Equivalent Circuit Models 2008
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Silicon germanium CMOS optoelectronic switching device: Bringing light to latch
IEEE TRANSACTIONS ON ELECTRON DEVICES
2007; 54 (12): 3252-3259
View details for DOI 10.1109/TED.2007.908903
View details for Web of Science ID 000251268300015
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An optical interconnect transceiver at 1550 nm using low-voltage electroabsorption modulators directly integrated to CMOS
JOURNAL OF LIGHTWAVE TECHNOLOGY
2007; 25 (12): 3739-3747
View details for DOI 10.1109/JLT.2007.909334
View details for Web of Science ID 000251943600011
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Fundamental limit to linear one-dimensional slow light structures
PHYSICAL REVIEW LETTERS
2007; 99 (20)
Abstract
Using a new general approach to limits in optical structures that counts orthogonal waves generated by scattering, we derive an upper limit to the number of bits of delay possible in one-dimensional slow light structures that are based on linear optical response to the signal field. The limit is essentially the product of the length of the structure in wavelengths and the largest relative change in dielectric constant anywhere in the structure at any frequency of interest. It holds for refractive index, absorption, or gain variations with arbitrary spectral or spatial form. It is otherwise completely independent of the details of the structure's design, and does not rely on concepts of group velocity or group delay.
View details for DOI 10.1103/PhysRevLett.99.203903
View details for Web of Science ID 000251003600020
View details for PubMedID 18233141
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Fundamental limit for optical components
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
2007; 24 (10): A1-A18
View details for Web of Science ID 000250396500002
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Ge-SiGe quantum-well waveguide photodetectors on silicon for the near-infrared
IEEE PHOTONICS TECHNOLOGY LETTERS
2007; 19 (17-20): 1631-1633
View details for DOI 10.1109/LPT.2007.904929
View details for Web of Science ID 000250212600114
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Germanium quantum wells for high-performance modulators in silicon photonics
PHOTONICS SPECTRA
2007; 41 (9): 80-83
View details for Web of Science ID 000249486600016
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SiGe optoelectronic metal-oxide semiconductor field-effect transistor
OPTICS LETTERS
2007; 32 (14): 2022-2024
Abstract
We propose a novel semiconductor optoelectronic switch that is a fusion of a Ge optical detector and a Si metal-oxide semiconductor field-effect transistor (MOSFET). The device operation is investigated with simulations and experiments. The switch can be fabricated at the nanoscale with extremely low capacitance. This device operates in telecommunication standard wavelengths, hence providing the surrounding Si circuitry with noise immunity from signaling. The Ge gate absorbs light, and the gate photocurrent is amplified at the drain terminal. Experimental current gain of up to 1000x is demonstrated. The device exhibits increased responsivity (approximately 3.5x) and lower off-state current (approximately 4x) compared with traditional detector schemes.
View details for PubMedID 17632630
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Optical modulator on silicon employing germanium quantum wells
OPTICS EXPRESS
2007; 15 (9): 5851-5859
Abstract
We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with silicon-germanium barriers. The peak contrast ratio is 7.3 dB at 1457 nm for a 10 V swing, and exceeds 3 dB from 1441 nm to 1461 nm. The novel side-entry structure employs an asymmetric Fabry-Perot resonator at oblique incidence. Unlike waveguide modulators, the design is insensitive to positional misalignment, maintaining > 3 dB contrast while translating the incident beam 87 mum and 460 mum in orthogonal directions. Since the optical ports are on the substrate edges, the wafer top and bottom are left free for electrical interconnections and thermal management.
View details for Web of Science ID 000246395000064
View details for PubMedID 19532843
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Femtosecond carrier dynamics in Ge/SiGe quantum wells
4th IEEE International Conference on Group IV Photonics
IEEE. 2007: 187–189
View details for Web of Science ID 000253465500063
- Fundamental limit to optical component 2007
- Rise-time measurements of low capacitance CMOS detectors using a pump-probe technique 2007
- Plasmonic waveguides as transmission lines 2007
- Near-infrared photodetector enhanced by an open-sleeve dipole antenna 2007
- On perfect invisibility and cloaking 2007
- 1550 nm Optical Interconnect Transceiver with Low Voltage Electroabsorption Modulators Flip-Chip Bonded to 90 nm CMOS 2007
- Fundamental Limit to Delay-Bandwidth Product in One-Dimensional Linear Optical Structures Slow Light and Fast Light Topical Meeting 2007
- Waveguide electroabsorption modulator on Si employing Ge/SiGe quantum wells 2007
- Novel Si-based CMOS Optoelectronic Switching Device Operating in the Near Infrared 2007
- The Fundamental Limit to Optical Components Optics and Photonics News 2007: 27
- Optical modulator on Si employing Ge quantum wells 2007
- How to become invisible SPIE Newsroom, March 2007 http://newsroom.spie.org/x5923.xml?highlight=x535 2007
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On perfect cloaking
OPTICS EXPRESS
2006; 14 (25): 12457-12466
Abstract
We show in principle how to cloak a region of space to make its contents classically invisible or transparent to waves. The method uses sensors and active sources near the surface of the region, and could operate over broad bandwidths. A general expression is given for calculating the necessary sources, and explicit, fully causal simulations are shown for scalar waves. Vulnerability to broad-band probing is discussed, and any active scheme should detectable by a quantum probe, regardless of bandwidth.
View details for Web of Science ID 000242964300065
View details for PubMedID 19529679
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Quantum-confined Stark effect in Ge/SiGe quantum wells on Si for optical modulators
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2006; 12 (6): 1503-1513
View details for DOI 10.1109/JSTQE.2006.883146
View details for Web of Science ID 000243013700023
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Optoelectronic switches based on diffusive conduction
JOURNAL OF APPLIED PHYSICS
2006; 100 (4)
View details for DOI 10.1063/1.2234818
View details for Web of Science ID 000240236800008
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Temporal and spectral nonspecularities in reflection at surface plasmon resonance
APPLIED PHYSICS LETTERS
2006; 89 (4)
View details for DOI 10.1063/1.2233622
View details for Web of Science ID 000239376500002
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C-shaped nanoaperture-enhanced germanium photodetector
OPTICS LETTERS
2006; 31 (10): 1519-1521
Abstract
We present a C-shaped nanoaperture-enhanced Ge photodetector that shows 2-5 times the photocurrent enhancement over that from a square aperture of the same area at 1310 nm wavelength. We demonstrate the polarization dependence of the C-aperture photodetector over a wide wavelength range. Our experimental observation agrees well with finite-difference time-domain simulation results.
View details for PubMedID 16642158
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Self-aligned via and trench for metal contact in III-V semiconductor devices
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
2006; 24 (3): 1117-1122
View details for DOI 10.1116/1.2188000
View details for Web of Science ID 000238790000007
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Integrated photonic switches for nanosecond packet-switched optical wavelength conversion
OPTICS EXPRESS
2006; 14 (1): 361-368
Abstract
We present a multifunctional photonic switch that monolithically integrates an InGaAsP/InP quantum well electroabsorption modulator and an InGaAs photodiode as a part of an on-chip, InP optoelectronic circuit. The optical multifunctionality of the switch offers many configurations to allow for different optical network functions on a single chip. Here we experimentally demonstrate GHz-range optical wavelength-converting switching with only ~10 mW of absorbed input optical power, electronically controlled packet switching with a reconfiguration time of <2.5 ns, and optically controlled packet switching in <300 ps.
View details for Web of Science ID 000234538800040
View details for PubMedID 19503349
- C-shaped Nano-Aperture-Enhanced Germanium Photodetector in Integrated Photonics Research and Applications/Nanophotonics, Technical Digest (CD) (Optical Society of America, 2006) 2006
- Self-aligned via and trench for metal contact in III-V semiconductor deivces J. Vac. SCi. Technol. B 2006; 24: 1117-1122
- Performance Limit for Optical Components 2006
- Systematic photonic crystal device design: global and local optimization and sensitivity analysis IEEE J. Quantum Electron. 2006; 42 (3): 266 – 279
- Nonlinear Optical Effects in InxGa(1-x)As Quantum Systems for Saturable Absorbers 2006
- Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon SiGe Technology and Device Meeting 2006
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Photonic crystals: Straightening out light
Nature Materials
2006; 5: 83–84
View details for DOI 10.1038/nmat1566
- Limit to the Performance of Optical Components in Photonic Metamaterials: From Random to Periodic, Technical Digest (CD) (Optical Society of America, 2006) 2006
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Intimate monolithic integration of chip-scale photonic circuits
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2005; 11 (6): 1255-1265
View details for DOI 10.1109/JSTQE.2005.860995
View details for Web of Science ID 000235144100003
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Strong quantum-confined Stark effect in germanium quantum-well structures on silicon
NATURE
2005; 437 (7063): 1334-1336
Abstract
Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.
View details for DOI 10.1038/nature04204
View details for PubMedID 16251959
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Relationship between the superprism effect in one-dimensional photonic crystals and spatial dispersion in nonperiodic thin-film stacks
OPTICS LETTERS
2005; 30 (18): 2475-2477
Abstract
We derive that, in all-pass (unity amplitude transmittance or reflectance) one-dimensional layered structures, the tangent of the group-propagation angle, the group delay, and the stored energy are approximately proportional. Thus photonic crystal superprisms and spatial dispersion in nonperiodic photonic nanostructures are generally related to wavelength-dependent stored energy in the stack.
View details for PubMedID 16196357
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Limits on the performance of dispersive thin-film stacks
APPLIED OPTICS
2005; 44 (16): 3349-3357
Abstract
Dispersive thin-film stacks are interesting as compact, cost-effective devices for temporal dispersion compensation and wavelength multiplexing. Their performance depends on the total group delay or spatial shift that can be achieved. For general multilayer stacks, no analytic model exists relating the performance to the stack parameters such as the refractive indices and the number of layers. We develop an empirical model by designing and analyzing 623 thin-film stacks with constant dispersion. From this analysis we conclude that, for given stack parameters, the maximum constant dispersion value is inversely proportional to the wavelength range over which the dispersion is achieved. This is equivalent to saying that, for constant dispersion, there is a maximum possible spatial shift (or group delay) that can be achieved for a given material system and number of layers. This empirical model is useful to judge the feasibility of dispersive photonic nanostructures and photonic crystal superprism devices and serves as a first step in the search for an analytic performance model. We predict that an 8-channel wavelength multiplexer can be realized with a single 21-microm-thick SiO2-Ta2O5 thin-film stack.
View details for PubMedID 15943271
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Interferometric sensors for spectral imaging
SENSORS AND ACTUATORS A-PHYSICAL
2005; 120 (1): 110-114
View details for DOI 10.1016/j.sna.2004.11.022
View details for Web of Science ID 000228770700015
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Misalignment-tolerant surface-normal low-voltage modulator for optical interconnects
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2005; 11 (2): 338-342
View details for DOI 10.1109/JSTQE.2005.845613
View details for Web of Science ID 000228938900007
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Silicon-based micro-Fourier spectrometer
IEEE TRANSACTIONS ON ELECTRON DEVICES
2005; 52 (3): 419-426
View details for DOI 10.1109/TED.2005.843880
View details for Web of Science ID 000227395000018
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Self-aligning planarization and passivation for integration applications in III-V semiconductor devices
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
2005; 18 (1): 182-189
View details for DOI 10.1109/TSM.2004.841834
View details for Web of Science ID 000226791600022
- Filtering and High-Speed Switching Characteristics of a C-band Rapidly Tunable Wavelength-Selective MSM Detector 2005
- Photonic Crystal Device Sensitivity Analysis and Optimization with Wannier Basis Gradients 2005
- MSM-Based Integrated CMOS Wavelength Tunable Optical Receiver 2005
- Novel Electrically Controlled Rapidly Wavelength Selective Photodetection Using MSMs IEEE J. Selected Topics in Quantum Electronics 2005; 11 (1): 184-9
- MSM-based integrated CMOS wavelength-tunable optical receiver IEEE Photonics Technology Letters 2005; 17 (6): 1271-3
- A Single Transverse-Mode Monolithically Integrated Long Vertical-Cavity Surface-Emitting Laser IEEE Photonics Technology Letters 2005; 17: 1366 – 1368
- Silicon-Based Micro-Fourier Spectrometer IEEE Trans. on Electron Devices 2005; 3 (52): 419‑426
- Intimate monolithic integration of chip-scale photonic circuits IEEE J. Sel. Top. Quantum Electron. 2005; 11 (6): 1244 - 1256
- Linear differential electro-optic conversion of sampled voltage signals using a MSM and multiple quantum well modulators 2005
- The Relationship between the Superprism Effect in One-Dimensional Photonic Crystals and Spatial Dispersion in Non-Periodic Thin-Film Stacks Optics Lett., selected for the October 10, 2005 issue of Virtual Journal of Nanoscale Science & Technology 2005; 30 (18): 2475-7
- Photonic Crystal Device Sensitivity Analysis with Wannier Basis Gradients Optics Letters 2005; 3 (30): 302 – 304
- Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits IEEE J. Sel. Top. Quantum Electron. 2005; 11 (6): 1278 – 1283
- Multifunctional integrated photonic switches IEEE J. Selected Topics in Quantum Electronics 2005; 11 (1): 86 – 98
- Misalignment-Tolerant Surface-Normal Low-Voltage Modulator for Optical Interconnects IEEE J. Selected Topics in Quantum Electronics 2005; 11 (2): 338 - 342
- Limits to the performance of dispersive thin-film stacks Applied Optics 2005; 44 (18): 3349 – 3357
- Demonstration of Systematic Photonic Crystal Device Design and Optimization By Low Rank Adjustments: an Extremely Compact Mode Separator Optics Letters 2005; 30 (2): 141-143
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Multifunctional integrated photonic switches
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2005; 11 (1): 86-96
View details for DOI 10.1109/JSTQE.2004.841715
View details for Web of Science ID 000227014900010
- Spectral shaping of electrically controlled MSM-based rapidly tunable photodetectors 2005
- Quantum-confined Stark effect electroabsorption in Ge/SiGe quantum wells on silicon substrates 2005
- Opportunities for Optics in Integrated Circuits Applications 2005
- Wannier Basis Design and Optimization of a Photonic Crystal Waveguide Crossing IEEE Photonics Technology Letters 2005; 17 (9): 1875-7
- Spectral Shaping of Electrically Controlled MSM-Based Tunable Photodetectors IEEE Photonics Technology Letters 2005; 17: 2158-60
- Photonic Crystal Device Optimization Without Increasing Fabrication Tolerances: A Mode Demultiplexer Design in Integrated Photonics Research and Applications/Nanophotonics for Information Systems, Technical Digest (Optical Society of America, 2005) 2005
- Multifunctional Integrated Photonic Switches for Nanosecond Packet-Switched Wavelength Conversion in Integrated Photonics Research and Applications/Nanophotonics for Information Systems, Technical Digest (Optical Society of America, 2005) 2005
- Linear Electro-optic Conversion of Sampled Voltage Signals Using a Low-Temperature-Grown GaAs MSM and a Multiple Quantum Well Modulator 2005
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Scalable wavelength-converting crossbar switches
IEEE PHOTONICS TECHNOLOGY LETTERS
2004; 16 (10): 2305-2307
View details for DOI 10.1109/LPT.2004.834473
View details for Web of Science ID 000224105800035
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Pump-probe measurements of CMOS detector rise time in the blue
JOURNAL OF LIGHTWAVE TECHNOLOGY
2004; 22 (9): 2213-2217
View details for DOI 10.1109/JLT.2004.833252
View details for Web of Science ID 000223796900020
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Designing for beam propagation in periodic and nonperiodic photonic nanostructures: Extended Hamiltonian method
PHYSICAL REVIEW E
2004; 70 (3)
Abstract
We use Hamiltonian optics to design and analyze beam propagation in two-dimensional (2D) periodic structures with slowly varying nonuniformities. We extend a conventional Hamiltonian method, adding equations for calculating the width of a beam propagating in such structures, and quantify the range of validity of the extended Hamiltonian equations. For calculating the beam width, the equations are more than 10(3) times faster than finite difference time domain (FDTD) simulations. We perform FDTD simulations of beam propagation in large 2D periodic structures with slowly varying nonuniformities to validate our method. Beam path and beam width calculated using the extended Hamiltonian method show good agreement with FDTD simulations. By contrasting the method with ray tracing of the bundle of rays, we highlight and explain the limitations of the extended Hamiltonian method. Finally, we use a frequency demultiplexing device optimization example to demonstrate the potential applications of the method.
View details for DOI 10.1103/PhysRevE.70.036612
View details for PubMedID 15524661
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Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
IEEE JOURNAL OF QUANTUM ELECTRONICS
2004; 40 (6): 800-804
View details for DOI 10.1109/JQE.2004.828234
View details for Web of Science ID 000221857800024
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High-speed optical switching based on diffusive conduction in an optical waveguide with surface-normal optical control
JOURNAL OF APPLIED PHYSICS
2004; 95 (5): 2258-2263
View details for DOI 10.1063/1.1643789
View details for Web of Science ID 000189139600009
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Large-signal response of p-i-n photodetectors using short pulses with small spot sizes
IEEE JOURNAL OF QUANTUM ELECTRONICS
2004; 40 (2): 143-151
View details for DOI 10.1109/JQE.2003.821533
View details for Web of Science ID 000188605100007
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Multilayer thin-film stacks with steplike spatial beam shifting
JOURNAL OF LIGHTWAVE TECHNOLOGY
2004; 22 (2): 612-618
View details for DOI 10.1109/JLT.2004.824380
View details for Web of Science ID 000220443800037
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Optically controlled electroabsorption modulators for unconstrained wavelength conversion
APPLIED PHYSICS LETTERS
2004; 84 (4): 469-471
View details for DOI 10.1063/1.1643539
View details for Web of Science ID 000188316500005
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Dual-diode quantum-well modulator for C-band wavelength conversion and broadcasting
OPTICS EXPRESS
2004; 12 (2): 310-316
Abstract
We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength conversion across 45 nm between 1525 nm and 1570 nm, and dual-wavelength broadcasting over 20 nm between 1530 nm and 1565 nm, spanning the entire C-band with >10dB RF-extinction ratio and using 3.1-6.7 mW absorbed optical power at 1.25 Gb/s.
View details for Web of Science ID 000188383200011
View details for PubMedID 19471539
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Receiverless detection schemes for optical clock distribution
Conference on Quantum Sensing and Nanophotonic Devices
SPIE-INT SOC OPTICAL ENGINEERING. 2004: 352–359
View details for DOI 10.1117/12.518316
View details for Web of Science ID 000223199200035
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Photonic nanostructures for wavelength division multiplexing
Conference on Nanophotonics for Communication
SPIE-INT SOC OPTICAL ENGINEERING. 2004: 82–96
View details for DOI 10.1117/12.579946
View details for Web of Science ID 000225834600009
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Wavelength division multiplexing using dispersive thin-film stacks
6th International Conference on Transparent Optical Networks (ICTON 2004)
IEEE. 2004: 291–291
View details for Web of Science ID 000224408100061
- Novel Electrically Controlled Rapidly Wavelength Selective Photodetection Using MSMs 2004
- Transit-time limited response from low capacitance CMOS photodetectors 2004
- Photonic nanostructures for wavelength division multiplexing 2004
- Misalignment-tolerant surface normal low-voltage modulator for optical interconnects at 1.5 microns 2004
- Monolithically-integrated long vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate Optics Express 2004; 12 (17): 3967-3971
- Monolithically-integrated vertical cavity surface emitting laser incorporating a concave micromirror on a glass substrate 2004
- Low-Voltage Surface-Normal InGaAsP/InP Modulator for Optical Interconnects 2004
- Monolithic Integration of GaAs Devices with Completely Fabricated Si CMOS Circuits 2004
- Photodiode-driven quantum-well modulators for C-band wavelength conversion and broadcasting 2004
- Optical Interconnection and Clocking for Electronic Chips 2004
- Multimode interference device in 2-D non-uniform photonic crystal slab 2004
- Scalable wavelength-converting crossbar switches IEEE Photonics Technology Letters 2004; 16 (10): 2305-7
- Optically-controlled electroabsorption modulators for unconstrained wavelength conversion Appl. Phys. Lett 2004; 84: 469-471
- Multilayer Thin-Film Stacks With Steplike Spatial Beam Shifting J. Lightwave Technol. 2004; 22: 612 – 618
- Multilayer thin-film coatings for optical communication systems OSA Topical Meeting on Optical Interference Coatings 2004 2004
- Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches IEEE Journal of Quantum Electronics 2004; 40 (6): 800 – 804, 800-4
- Novel passivation and planarization in the integration if III-V semiconductor devices 2004
- Electrically-reconfigurable integrated photonic switches 2004 IEEE Lasers and Electro-Optics Society Annual Meeting 2004
- Designing for beam propagation in periodic and nonperiodic photonic nanostructures: Extended Hamiltonian method Phys. Rev E 2004; 70 (3): 0. 036612
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Optical interconnection and clocking for electronic chips
8th World Multi-Conference on Systemics, Cybernetics and Informatics
INT INST INFORMATICS & SYSTEMICS. 2004: 177–181
View details for Web of Science ID 000227690500034
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Electrically-reconfigurable integrated photonic switches
17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
IEEE. 2004: 455–456
View details for Web of Science ID 000225390900226
- Adaptive Coherence-Sensing Imaging Spectrometer 2004
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Low-voltage surface-normal InGaAsP/InP modulator for optical interconnects
17th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
IEEE. 2004: 461–462
View details for Web of Science ID 000225390900229
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Photonic A/D conversion using low-temperature-grown GaAs MSM switches integrated with Si-CMOS
JOURNAL OF LIGHTWAVE TECHNOLOGY
2003; 21 (12): 3104-3115
View details for DOI 10.1109/JLT.2003.820054
View details for Web of Science ID 000188851300019
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A 40-GHz-bandwidth, 4-bit, time-interleaved A/D converter using photoconductive sampling
IEEE International Solid-State Circuits Conference
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. 2003: 2021–30
View details for DOI 10.1109/JSSC.2003.819172
View details for Web of Science ID 000187569900002
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Adaptive imaging spectrometer in a time-domain filtering architecture
OPTICS EXPRESS
2003; 11 (17): 1960-1965
Abstract
We demonstrate an imaging spectrometer with 30nm resolution that utilizes a novel time-domain filtering architecture. The architecture is based on a pixel by pixel integration of the interferogram signal mixed with reference waveforms. The system can be adapted in real time to discriminate between LED sources of different wavelengths, perform signal processing on the spectra, as well as discriminate between highly overlapping, broadband spectral features in a scene illuminated by a tungsten lamp. Unlike a conventional spectral signature discrimination system, which needs a dedicated computation subsystem running a discrimination algorithm, the time-domain filtering architecture embeds much of the computation in the filtering, which will aid the design of integrated miniaturized spectral signature discrimination systems.
View details for Web of Science ID 000184951200003
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Adaptive imaging spectrometer in a time-domain filtering architecturedaptive Imaging Spectrometer in a Time-Domain Filtering Architecture.
Optics express
2003; 11 (17): 1960-1965
Abstract
We demonstrate an imaging spectrometer with 30nm resolution that utilizes a novel time-domain filtering architecture. The architecture is based on a pixel by pixel integration of the interferogram signal mixed with reference waveforms. The system can be adapted in real time to discriminate between LED sources of different wavelengths, perform signal processing on the spectra, as well as discriminate between highly overlapping, broadband spectral features in a scene illuminated by a tungsten lamp. Unlike a conventional spectral signature discrimination system, which needs a dedicated computation subsystem running a discrimination algorithm, the time-domain filtering architecture embeds much of the computation in the filtering, which will aid the design of integrated miniaturized spectral signature discrimination systems.
View details for PubMedID 19466081
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Wavelength demultiplexer using the spatial dispersion of multilayer thin-film structures
IEEE PHOTONICS TECHNOLOGY LETTERS
2003; 15 (8): 1097-1099
View details for DOI 10.1109/LPT.2003.815318
View details for Web of Science ID 000184370500026
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Ultrafast optoelectronic sample-and-hold using low-temperature-grown GaAs MSM
IEEE PHOTONICS TECHNOLOGY LETTERS
2003; 15 (5): 724-726
View details for DOI 10.1109/LPT.2003.810252
View details for Web of Science ID 000182674800032
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Latency reduction in optical interconnects using short optical pulses
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2003; 9 (2): 410-418
View details for DOI 10.1109/JSTQE.2003.813309
View details for Web of Science ID 000186135100033
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Wavelength division multiplexed optical interconnect using short pulses
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2003; 9 (2): 486-491
View details for DOI 10.1109/JSTQE.2003.813322
View details for Web of Science ID 000186135100042
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Multilayer thin-film structures with high spatial dispersion
APPLIED OPTICS
2003; 42 (7): 1330-1345
Abstract
We demonstrate how to design thin-film multilayer structures that separate multiple wavelength channels with a single stack by spatial dispersion, thus allowing compact manufacturable wavelength multiplexers and demultiplexers and possibly beam-steering or dispersion-control devices. We discuss four types of structure--periodic one-dimensional photonic crystal superprism structures, double-chirped structures exploiting wavelength-dependent penetration depth, coupled-cavity structures with dispersion that is due to stored energy, and numerically optimized nonperiodic structures utilizing a mixture of the other dispersion effects. We experimentally test the spatial dispersion of a 200-layer periodic structure and a 66-layer nonperiodic structure. Probably because of its greater design freedom, the nonperiodic structure can give both a linear shift with wavelength and a larger usable shift than the thicker periodic structure gives.
View details for PubMedID 12638890
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Receiver-less optical clock injection for clock distribution networks
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2003; 9 (2): 400-409
View details for DOI 10.1109/JSTQE.2003.813319
View details for Web of Science ID 000186135100032
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The benefits of ultrashort optical pulses in optically interconnected systems
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2003; 9 (2): 477-485
View details for DOI 10.1109/JSTQE.2003.813317
View details for Web of Science ID 000186135100041
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Novel optically-controlled optical switch based on intimate integration of surface-normal photodiode and waveguide electroabsorption modulator for wavelength conversion
16th Annual Meeting of the IEEE Lasers and Electro-Optics Society
IEEE. 2003: 644–645
View details for Web of Science ID 000188359700325
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All-silicon standing-wave microspectrometer with tunable spectral resolution
IEEE/LEOS International Conference on Optical MEMS
IEEE. 2003: 26–27
View details for Web of Science ID 000185581900013
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Thin film technology based micro-Fourier spectrometer
Conference on MOEMS and Miniaturized Systems III
SPIE-INT SOC OPTICAL ENGINEERING. 2003: 127–138
View details for Web of Science ID 000181865000018
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A 20GHz bandwidth, 4b photoconductive-sampling time-interleaved CMOS ADC
IEEE International Solid-State Circuits Conference
IEEE. 2003: 320-?
View details for Web of Science ID 000185583300135
- Thin film technology based micro-Fourier spectrometer 2003
- Scaling internet routers using optics 2003
- A 40-GHz-Bandwidth, 4-Bit, Time-Interleaved A/D Converter Using Photoconductive Sampling IEEE J. Solid-State Circuits 2003; 38: 2021 – 2030
- Novel optically-controlled optical switch based on intimate integration of surface-normal photodiode and waveguide electroabsorption modulators for wavelength conversion 2003
- Novel Electrically Tunable MSM Photodetector for Resolving WDM Channels 2003
- Designing for beam propagation in periodic and nonperiodic photonic nanostructures: extended Hamiltonian method 2003
- Adaptive spectra-selective imaging by real-time photoconductor bias modulation 2003
- Wavelength demultiplexer using the spatial dispersion of multilayer thin-film structures IEEE Photonics Technol. Lett. 2003; 15: 1097-1099
- Ultrafast Optoelectronics Sample and Hold using Low-Temperature-Grown GaAs MSM IEEE Photonics Technol. Lett. 2003; 15: 724 – 726
- The Benefits of Ultrashort Optical Pulses in Optically-Interconnected Systems IEEE J. Sel. Top. Quantum Electron. 2003; 9: 477-485
- A 20 GHz bandwidth, 4 b photoconductive-sampling time-interleaved CMOS ADC 2003
- Multilayer Thin-Film Structures with High Spatial Dispersion Applied Optics 2003; 42: 1330 – 1345
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Optical pump-probe measurements of the latency of silicon CMOS optical interconnects
IEEE PHOTONICS TECHNOLOGY LETTERS
2002; 14 (8): 1214-1216
View details for Web of Science ID 000177176000062
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Adaptive time-domain filtering for real-time spectral discrimination in a Michelson interferometer
OPTICS LETTERS
2002; 27 (13): 1147-1149
Abstract
We present a method of spectral discrimination that employs time-domain processing instead of the typical frequency-domain analysis and implement the method in a Michelson interferometer with a nonlinear mirror scan. The technique yields one analog output value per scan instead of a complete interferogram by directly filtering a measured scan with a reference function in the time domain. Such a procedure drastically reduces data-processing requirements downstream. Additionally, using prerecorded interferograms as references eliminates the need to compensate for scan nonlinearities, which broadens the field of usable components for implementation in miniaturized sensing systems. With our efficient use of known spectral signatures, we demonstrate real-time discrimination of 633- and 663-nm laser sources with a mirror scan length of 1 microm , compared with the Rayleigh criterion of 7 microm.
View details for Web of Science ID 000176623100019
View details for PubMedID 18026389
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Equivalence of diffusive conduction and giant ambipolar diffusion
JOURNAL OF APPLIED PHYSICS
2002; 91 (7): 4374-4381
View details for DOI 10.1063/1.1453508
View details for Web of Science ID 000174663900063
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High-impedance high-frequency silicon detector response for precise receiverless optical clock injection
Silicon-based and Hybrid Optoelectronics IV Conference
SPIE-INT SOC OPTICAL ENGINEERING. 2002: 78–88
View details for Web of Science ID 000176000300009
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Standing-wave transform spectrometer based on integrated MEMS mirror and thin-film photodetector
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
2002; 8 (1): 98-105
View details for Web of Science ID 000174519300013
- Demonstration of a Wavelength Division Multiplexed Chip-to-Chip Optical Interconnect 2002
- Adaptive coherence im aging system with time-domain filtering 2002
- Large-signal response of high speed p-i-n photodetectors to short pulses with small spot sizes in CLEO 2002 2002
- Performance Enhancement of an Optical Interconnect Using Short Pulses from a Modelocked Diode Laser 2002
- Optical Interconnect Operation with High Noise Immunity 2002
- Cavity Resonance Tuning of Asymmetric Fabry-Perot MQW Modulators Following Flip-Chip Bonding to Silicon CMOS 2002
- Wide bandwidth, large, and tunable polarization mode dispersion in multilayered omnidirectional reflectors Appl. Phys. Lett. 2002; 81: 187-189
- Standing-Wave Transform Spectrometer Based on Integrated MEMS Mirror and Thin-Film Photodetector IEEE J. Selected Topics Quantum Electron. 2002; 8: 98 – 105
- Integrated standing-wave transform spectrometer for near infr ared optical analysis in IEEE Lasers and Electro-Optics Society 2002 Annual Meeting 2002
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Differential optical remoting of ultrafast charge packets using self-linearized modulation
15th Annual Meeting of the IEEE-Lasers-and-Electro-Optics-Society
IEEE. 2002: 467–468
View details for Web of Science ID 000179772700232
- Thin-Film (DE)MUX based on Step-Like Spatial Beam Shifting 2002
- Thin-Film Wavelength Demultiplexer Based on Photonic Crystal and Group Velocity Effects 2002
- Thin-Film (DE)MUX based on group-velocity effects 2002
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Transform spectrometer based on measuring the periodicity of Talbot self-images
OPTICS LETTERS
2001; 26 (21): 1645-1647
Abstract
We demonstrate a compact transform spectrometer based on measuring the periodicity of Talbot self-images. The system has no moving parts; it contains only a tilted absorption grating that is imaged onto a CCD camera. The linear architecture of the system makes it possible to use this design in imaging arrays of spectrometers. Unlike other transform spectrometers, its resolution is independent of wavelength.
View details for Web of Science ID 000172162000003
View details for PubMedID 18049686
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Spatiotemporal control of ultrashort optical pulses by refractive-diffractive-dispersive structured optical elements
OPTICS LETTERS
2001; 26 (17): 1373-1375
Abstract
Structured optical elements that control the spatial and temporal characteristics of femtosecond light pulses are analyzed and synthesized. We show that unique spatiotemporal effects can be attained based on the diffraction, refraction, and dispersive effects that appear in the femtosecond regime. We argue that the design requirements for ultrafast optics are beyond the achromatization considerations that are usually applied to incoherent illumination because of the need to consider coherent effects. Despite fundamental limitations in the space-time control of ultrashort pulses, we show the potential of this technique to improve simultaneously the spatial and the temporal resolution of a lens and to generate ultrafast pulse sequences.
View details for Web of Science ID 000170759400022
View details for PubMedID 18049613
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Optically controlled optical gate with an optoelectronic dual diode structure - theory and experiment
OPTICAL AND QUANTUM ELECTRONICS
2001; 33 (7-10): 1035-1054
View details for Web of Science ID 000170944400025
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Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion
IEEE PHOTONICS TECHNOLOGY LETTERS
2001; 13 (7): 717-719
View details for Web of Science ID 000169452000025
- Adaptive Imaging Spectrometer in a Time-Domain Filtering Architecture 2001
- High-speed Sample and Hold using Low Temperature Grown GaAs MSM for Photonic A/D Conversion 2001
- Spatiotemporal control of ultrashort optical pulses by refractive-diffractive-dispersive structured optical elements Optics Lett. 2001; 26: 1373-1375
- Real-time discrimination of spectra by time-domain adaptive filtering in a Fourier transform interferometer 2001
- Latency in Short Pulse-based Optical Interconnects in IEEE Lasers and Electro-Optics Society 2001 Annual Meeting 2001
- Optical Pump-Probe Latency Measurements of Silicon CMOS Optical Interconnects 2001
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Observation of wavelength-converting optical switching at 2.5 GHz in a surface-normal illuminated waveguide
14th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society
IEEE. 2001: 362–363
View details for Web of Science ID 000175700800182
- Observation of Wavelength-Converting Optical Switching at 2.5 GHz in a Surface-Normal Illuminated Waveguide 2001
- Compact Standing-Wave Transform Spectrometer Based on Integrated MEMS Mirror and Thin-Film Photodetector 2001
- Ultrafast differential sample and hold using low-temperature-grown GaAs MSM for photonic A/D conversion IEEE Photonics Tech. Lett. 2001; 13: 717-719
- Transform spectrometer based on measuring the periodicity of Talbot self-images Optics Lett. 2001; 26: 1645-1647
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Use of a dielectric stack as a one-dimensional photonic crystal for wavelength demultiplexing by beam shifting
OPTICS LETTERS
2000; 25 (20): 1502-1504
Abstract
We demonstrate the use of a 30-period dielectric stack structure as a highly dispersive device to spatially separate two beams with a 4-nm wavelength difference by more than their beam width. Unlike previous devices, our structure is simple to fabricate and relatively compact. We discuss possible applications of our device within wavelength-division multiplexing systems.
View details for PubMedID 18066259
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Skew and jitter removal using short optical pulses for optical interconnection
IEEE PHOTONICS TECHNOLOGY LETTERS
2000; 12 (6): 714-716
View details for Web of Science ID 000088207200042
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Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern
APPLIED PHYSICS LETTERS
2000; 76 (22): 3185-3187
View details for Web of Science ID 000087239400009
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Electromagnetic degrees of freedom of an optical system
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION
2000; 17 (5): 892-902
Abstract
We present a rigorous electromagnetic formalism for defining, evaluating, and optimizing the degrees of freedom of an optical system. The analysis is valid for the delivery of information with electromagnetic waves under arbitrary boundary conditions communicating between domains in three-dimensional space. We show that, although in principle there is an infinity of degrees of freedom, the effective number is finite owing to the presence of noise. This is in agreement with the restricted classical theories that showed this property for specific optical systems and within the scalar and paraxial approximations. We further show that the best transmitting and receiving functions are the solutions of well-defined eigenvalue equations. The present approach is useful for understanding and designing modern optical systems for which the previous approaches are not applicable, as well as for application in inverse and synthesis problems.
View details for Web of Science ID 000086764500010
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Communicating with waves between volumes: evaluating orthogonal spatial channels and limits on coupling strengths
APPLIED OPTICS
2000; 39 (11): 1681-1699
Abstract
A rigorous method for finding the best-connected orthogonal communication channels, modes, or degrees of freedom for scalar waves between two volumes of arbitrary shape and position is derived explicitly without assuming planar surfaces or paraxial approximations. The communication channels are the solutions of two eigenvalue problems and are identical to the cavity modes of a double phase-conjugate resonator. A sum rule for the connection strengths is also derived, the sum being a simple volume integral. These results are used to analyze rectangular prism volumes, small volumes, thin volumes in different relative orientations, and arbitrary near-field volumes: all situations in which previous planar approaches have failed for one or more reasons. Previous planar results are reproduced explicitly, extending them to finite depth. Depth is shown not to increase the number of communications modes unless the volumes are close when compared with their depths. How to estimate the connection strengths in some cases without a full solution of the eigenvalue problem is discussed so that estimates of the number of usable communications modes can be made from the sum rule. In general, the approach gives a rigorous basis for handling problems related to volume sources and receivers. It may be especially applicable in near-field problems and in situations in which volume is an intrinsic part of the problem.
View details for PubMedID 18345068
- Ultrafast Differential Sample and Hold using Low Temperature grown GaAs MSM for Photonic A/D Conversion 2000
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Spatio-temporal propagation of ultrashort pulses controlled by structured optical elements
13th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society
IEEE. 2000: 294–295
View details for Web of Science ID 000165806400150
- Spatio-temporal propagation of ultrashort pulses controlled by structured optical elements 2000
- Parallel-plate MEMS Mirror Design for Large On-resonance Displacement 2000
- Wavelength Monitor Based on Two Single-Quantum-Well Absorbers Sampling a Standing Wave Pattern Appl. Phys. Lett. 2000; 76: 3185-3187
- Rationale and Challenges for Optical Interconnects to Electronic Chips 2000
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Compact transform spectrometer based on sampling a standing wave
IEEE/LEOS International Conference on Optical MEMS
IEEE. 2000: 19–20
View details for Web of Science ID 000165310300009
- Transform Spectrometer Based on Measuring Periodicity of Talbot Self-Images 2000
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Parallel-plate MEMS mirror design for large on-resonance displacement
IEEE/LEOS International Conference on Optical MEMS
IEEE. 2000: 93–94
View details for Web of Science ID 000165310300044
- Wavelength Division Multiplexing by Beam Shifting Using a Dielectric Stack as a One-Dimensional Photonic Crystal 2000
- Electromagnetic degrees of freedom of an optical system J. Opt. Soc. Am. A 2000; 17: 892 – 902
- Optical Interconnects to silicon IEEE J. Selected Topics in Quantum Electronics 2000; 6: 1312-1317
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Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20 picosecond repetition period
Conference on Nonlinear Optics: Materials, Fundamentals, and Applications, Technical Digest
OPTICAL SOC AMERICA. 2000: 168–170
View details for Web of Science ID 000165407100053
- Optical Remoting of Ultrafast Charge Packets Using Self-Linearized Modulation 2000
- Demonstration of an optoelectronic dual-diode optically controlled optical gate with a 20-ps repetition period 2000
- Skew and jitter removal using short optical pulses for optical interconnection IEEE Photonics Technol. Lett. 2000; 12: 714 -716
- Communicating with waves between volumes - evaluating orthogonal spatial channels and limits on coupling strengths Appl. Opt. 2000; 39: 1681 – 1699
- Compact transform spectrometer based on sampling a standing wave 2000
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High-speed, optically controlled surface-normal optical switch based on diffusive conduction
APPLIED PHYSICS LETTERS
1999; 75 (5): 597-599
View details for Web of Science ID 000081644100001
- Degrees of Freedom of an Electromagnetic Wave 1999
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Degrees of freedom of an electromagnetic wave
18th Congress of the International Commission for Optics - Optics for the Next Millennium
SPIE-INT SOC OPTICAL ENGINEERING. 1999: 110–111
View details for Web of Science ID 000082790200049
- High-Speed, Optically-Controlled Surface-Normal Modulator Based on Diffusive Conduction Appl. Phys. Lett. 1999; 5 (75): 597-599
- Wavelength Division Multiplexed Optical Interconnects Using Femtosecond Optical Pulses 1999
- Wavelength Monitor Based on Two Single Quantum Well Absorbers in a Standing Wave 1999
- Optically-Controlled Optical Gate Using a Double Diode Structure 1999
- Optical Interconnects Using Short Optical Pulses 1999
- High-Speed Quantum Well Optoelectronic Gate Based on Diffuse Conduction Recovery edited by Chavel, P., Miller, David, A. B., Thienpont, H. 1998
- Optics for Digital Information Processing edited by Miller, A., Ebrahimzadeh, M., Finlayson, D., M. 1998
- Communicating with Waves Between Volumes -- How Many Different Spatial Channels Are There? edited by Chavel, P., Miller, David, A. B., Thienpont, H. 1998
- Spatial channels for communicating with waves between volumes Optics Lett. 1998; 23: 1645-1647
- Dense Two-Dimensional Integration of Optoelectronics and Electronics for Interconnections edited by Husain, A., Fallahi, M. 1998
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High-speed quantum well optoelectronic gate based on diffusive conduction recovery
Optics in Computing 98 Meeting
SPIE - INT SOC OPTICAL ENGINEERING. 1998: 10–13
View details for Web of Science ID 000074523000003
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Dual-function detector-modulator smart-pixel module
APPLIED OPTICS
1997; 36 (20): 4866-4870
Abstract
We describe a smart-pixel circuit that permits the use of a GaAs/AlGaAs multiple quantum well diode to be used both as a detector for data input and a modulator for data output. The module provides the ability to double the number of inputs or outputs to the array and is well suited to cascaded optoelectronic system architectures that require bidirectional communition.
View details for Web of Science ID A1997XK21900034
View details for PubMedID 18259290
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Firehose architectures for free-space optically interconnected VLSI circuits
JOURNAL OF PARALLEL AND DISTRIBUTED COMPUTING
1997; 41 (1): 109-114
View details for Web of Science ID A1997XC08200010
- Optical Receiver Sensitivity Improvement by Impulsive Coding OSA TOPS on Ultrafast Electronics and Optoelectronics edited by Nuss, M., Bowers, J. Optical Society of America. 1997: 63–67
- Physical Reasons for Optical Interconnection Special Issue on Smart Pixels, Int’l J. Optoelectronics 1997; 3 (11): 155-168
- Limit to the Bit-Rate Capacity of Electrical Interconnects from the Aspect Ratio of the System Architecture Special Issue on Parallel Computing with Optical Interconnects, J. Parallel and Distributed Computing 1997; 41: 42-52
- Receiver Sensitivity Improvement by Impulsive Coding IEEE Photonics Technol. Lett. 1997; 5 (9): 684-686
- Firehose Architectures for Free-Space Optically Interconnected VLSI Circuits J. Parallel and Distributed Computing 1997; 41: 109-114
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Photonic page buffer based on GaAs multiple-quantum-well modulators bonded directly over active silicon complementary-metal-oxide-semiconductor (CMOS) circuits: Errata
APPLIED OPTICS
1996; 35 (23): 4637-4640
Abstract
Owing to printing errors, [Appl. Opt. 35, 2439 (1996)] several figures were illegible. The figures are reprinted and briefly reviewed.
View details for Web of Science ID A1996VB38000012
View details for PubMedID 21102885
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Photonic page buffer based on GaAs multiple-quantum-well modulators bonded directly over active silicon complementary-metal-oxide-semiconductor (CMOS) circuits
APPLIED OPTICS
1996; 35 (14): 2439-2448
Abstract
We present a 2-kbit, 50-Mpage/s, photonic first-in, first-out page buffer based on gallium arsenide/aluminium-gallium arsenide multiple-quantum-well diodes that are flip-chip bonded to submicrometer silicon complementary-metal-oxide-semiconductor circuits. This photonic chip provides nonvolatile storage (buffering), asynchronous-to-synchronous conversion, bandwidth smoothing, tolerance to jitter or skew, spatial format conversion, wavelength conversion, and independent flow control for the input and the output channels. It serves as an interface chip for parallel-accessed optical bit-plane data. It represents the first smart-pixel array that accomplishes the vertical integration of multiple-quantum-well modulators and detectors directly over active silicon VLSI circuits and provides over 340 transistors per optical input-output. Results from high-speed single-channel testing and real-time array operation of the photonic page buffer are reported.
View details for Web of Science ID A1996UL34600012
View details for PubMedID 21085380
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Scaling optoelectronic-VLSI circuits into the 21st century: A technology roadmap
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
1996; 2 (1): 55-76
View details for Web of Science ID A1996VT00400007
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Arrays of optoelectronic switching nodes comprised of flip-chip-bonded MQW modulators and detectors on silicon CMOS circuitry
IEEE PHOTONICS TECHNOLOGY LETTERS
1996; 8 (2): 221-223
View details for Web of Science ID A1996TU60900017
- 15 µm solder bonding of GaAs/AlGaAs MQW devices to MOSIS 0.8 µm CMOS for 1 Gb/s two-beam smart-pixel receiver/transmitter 1996
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32 channel WDM graphic equalizer
IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing
IEEE. 1996: A26–A27
View details for Web of Science ID A1996BG16J00045
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Fabrication and testing of AMOEBA: An opto-electronic switch for multiprocessor networking
IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing
IEEE. 1996: B95–B96
View details for Web of Science ID A1996BG16J00107
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WDM/SDM fiber network design for the AMOEBA optoelectronic switch
IEEE/LEOS 1996 Summer Topical Meeting - Advanced Applications of Lasers in Materials Processing
IEEE. 1996: B97–B98
View details for Web of Science ID A1996BG16J00108
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15 mu m solder bonding of GaAs/AlGaAs MQW devices to MOSIS 0.8 mu m CMOS for 1Gb/s two-beam smart-pixel receiver/transmitter
1996 IEEE International Solid-State Circuits Conference
I E E E. 1996: 406–407
View details for Web of Science ID A1996BF43W00166
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Optical test of a photonic FIFO page buffer memory
Conference on Optical Interconnects in Broadband Switching Architectures
SPIE-INT SOC OPTICAL ENGINEERING. 1996: 213–221
View details for Web of Science ID A1996BF31L00022
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The AMOEBA chip: An optoelectronic switch for multiprocessor networking using dense-WDM
3rd International Conference on Massively Parallel Processing Using Optical Interconnections (MPPOI 96)
IEEE COMPUTER SOC. 1996: 94–100
View details for Web of Science ID A1996BG68E00013
- Scaling Optoelectronic-VLSI Circuits into the 21st Century: A Technology Roadmap IEEE J. Selected Topics in Quantum Electronics 1996; 1 (2): 55-76
- Arrays of Optoelectronic Switching Nodes Comprised of Flip-Chip-Bonded MQW Modulators and Detectors on Silicon CMOS Circuitry IEEE Photonics Technology Letters 1996; 8: 221-223
- Dense Optical Interconnections for Silicon Electronics in Trends in Optics: Research, Developments, and Applications edited by Consortini, A. Int’l Commission for Optics, Academic Press. 1996: 207–222
- Silicon Integrated Circuits Shine in News and Views, Nature 1996; 384: 307-308
- Digital Fourier Optics Appl. Optics 1996; 35: 1212-1219
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3-D INTEGRATION OF MQW MODULATORS OVER ACTIVE SUBMICRON CMOS CIRCUITS - 375 MB/S TRANSIMPEDANCE RECEIVER TRANSMITTER CIRCUIT
IEEE PHOTONICS TECHNOLOGY LETTERS
1995; 7 (11): 1288-1290
View details for Web of Science ID A1995TE02700022
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RING OSCILLATORS WITH OPTICAL AND ELECTRICAL READOUT BASED ON HYBRID GAAS MQW MODULATORS BONDED TO 0.8-MU-M SILICON VLSI CIRCUITS
ELECTRONICS LETTERS
1995; 31 (22): 1917-1918
View details for Web of Science ID A1995TE33900024
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GAAS MQW MODULATORS INTEGRATED WITH SILICON CMOS
IEEE PHOTONICS TECHNOLOGY LETTERS
1995; 7 (4): 360-362
View details for Web of Science ID A1995QR13100006
- GaAs MQW Modulators Integrated with Silicon CMOS IEEE Photonics Technology Letters 1995; 7: 360-362
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Demonstration of dense optoelectronic integration to Si CMOS for direct optical interfacing of logic circuits to fiber bundles
21st European Conference on Optical Communication (ECOC 95)
IMEC VZW, INTEC DEPARTMENT. 1995: 181–188
View details for Web of Science ID A1995BF60B00033
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3-D integration of MQW SEED detectors and modulators over active sub-micron CMOS circuits: Application to a 2Kbit parallel photonic page buffer
1995 Annual/8th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society (LEOS 95)
I E E E. 1995: A75–A76
View details for Web of Science ID A1995BE49N00038
- 3-D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit IEEE Photonics Technology Letters 1995; 7: 1288-1290
- Wavelength-division multiplexing with femtosecond pulses Optics Letters 1995; 20: 1166-1168
- Ring oscillators with optical and electrical readout based on hybrid GaAs MQW modulators bonded to 0.8 um silicon VLSI circuits Electronics Letters 1995; 31: 1917-1918
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LINEAR IMAGE DIFFERENTIATION BY USE OF ANALOG DIFFERENTIAL SELF-ELECTRO-OPTIC EFFECT DEVICES
OPTICS LETTERS
1994; 19 (22): 1882-1884
View details for Web of Science ID A1994PR09400028
View details for PubMedID 19855685
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CARRIER ESCAPE TUNNELING OUT OF SHALLOW MULTIPLE-QUANTUM WELLS STUDIED BY TRANSIENT 4-WAVE-MIXING
8th International Conference on Hot Carriers in Semiconductors
IOP PUBLISHING LTD. 1994: 523–25
View details for Web of Science ID A1994NM75300033
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SELF-LINEARIZED ANALOG DIFFERENTIAL SELF-ELECTRO-OPTIC-EFFECT DEVICE
APPLIED OPTICS
1994; 33 (8): 1492-1497
Abstract
We describe, demonstrate, and characterize an analog self-electro-optic-effect device that gives a difference between two optical output powers that is linearly proportional to an electrical or an optical drive. Such a device should permit bipolar (positive and negative) processing in novel image processing arrays. The device is able to operate over a range of more than 4 orders of magnitude of optical power from 50 nW to 2.5 mW, corresponding to uniform incident intensities as low as 3.3 mW/cm(2). The frequency response (3-dB limit) varies linearly from 7 kHz at 1-µW absorber power to 3.5 MHz at 1 mW of absorbed powers.
View details for Web of Science ID A1994NC58600019
View details for PubMedID 20862176
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WAVELENGTH-SELECTIVE DETECTOR BASED ON A QUANTUM-WELL IN A STANDING-WAVE
APPLIED PHYSICS LETTERS
1994; 64 (2): 134-136
View details for Web of Science ID A1994MQ50200002
- Laser Tuners and Wavelength-Sensitive Detectors Based on Absorbers in Standing Waves IEEE Journal of Quantum Electronics 1994; 30: 732-749
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DENSE WDM WITH FEMTOSECOND LASER PULSES
7th Annual Meeting of the IEEE Lasers-and-Electro-Optics-Society
IEEE. 1994: 199–200
View details for Web of Science ID A1994BC36N00096
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VERTICAL TRANSPORT STUDIED BY SUBPICOSECOND 4-WAVE-MIXING EXPERIMENTS
NATO Advanced Research Workshop on Coherent Optical Interactions in Semiconductors
PLENUM PRESS DIV PLENUM PUBLISHING CORP. 1994: 223–243
View details for Web of Science ID A1994BB67D00010
- Linear image differentiation by use of analog differential self-electro- optic effect devices Optics Letters 1994; 19: 1882-1884
- Wavelength-selective detector based on a quantum well in a standing wave Appl. Phys. Lett. 1994; 64: 134-136
- Femtosecond pulse distortion in GaAs quantum wells and its effect on pump-probe or four-wave-mixing experiments Phys. Rev. B 1994; 50: 18240-18249
- Self-linearized analog differential self-electro-optic-effect device Appl. Optics 1994; 33: 1492-1497
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ESCAPE TUNNELING OUT OF SHALLOW MULTIPLE-QUANTUM WELLS STUDIED BY TRANSIENT 4-WAVE-MIXING
APPLIED PHYSICS LETTERS
1993; 63 (17): 2372-2374
View details for Web of Science ID A1993MD95900022
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WAVELENGTH DEPENDENCE OF SATURATION AND THERMAL EFFECTS IN MULTIPLE-QUANTUM-WELL MODULATORS
APPLIED PHYSICS LETTERS
1993; 63 (13): 1715-1717
View details for Web of Science ID A1993LZ65400001
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ANALOG DIFFERENTIAL SELF-LINEARIZED QUANTUM-WELL SELF-ELECTRO-OPTIC-EFFECT MODULATOR
OPTICS LETTERS
1993; 18 (12): 974-976
Abstract
We describe an analog self-electro-optic-effect device that gives a difference between two optical output powers that is linearly proportional to electrical or optical drive, permitting bipolar processing in novel image-processing arrays. The device is able to operate over a range of more than four orders of magnitude optical power, from 50 nW to 2.5 mW, corresponding to uniform incident intensities as low as 3.3 mW/cm(2).
View details for Web of Science ID A1993LF88900014
View details for PubMedID 19823263
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INTERLEAVED-CONTACT ELECTROABSORPTION MODULATOR USING DOPING-SELECTIVE ELECTRODES WITH 25-DEGREES-C TO 95-DEGREES-C OPERATING RANGE
IEEE PHOTONICS TECHNOLOGY LETTERS
1993; 5 (2): 181-183
View details for Web of Science ID A1993KN74600022
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EVOLUTION OF THE SEED TECHNOLOGY - BISTABLE LOGIC GATES TO OPTOELECTRONIC SMART PIXELS
IEEE JOURNAL OF QUANTUM ELECTRONICS
1993; 29 (2): 655-669
View details for Web of Science ID A1993KQ48000039
- Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixels IEEE J. of Quantum Electronics 1993; 29: 655-669
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MONOLITHIC INTEGRATION OF GAAS/ALGAAS MULTIPLE-QUANTUM-WELL MODULATORS AND SILICON METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Optical-Society-of-America Topical Meeting on Photonics in Switching
OPTICAL SOC AMERICA. 1993: 94–98
View details for Web of Science ID A1993BZ58F00020
- Carrier Escape Dynamics In A Single-Quantum-Well Wave-Guide Modulator Optical and Quantum Electronics 1993; #12 (25): S965-S971
- Analog differential self-linearized quantum-well self-electro-optic-effect modulator Optics Letters 1993; 18: 974-976
- Wavelength dependence of saturation and thermal effects in multiple quantum well modulators Appl. Phys. Lett. 1993; 63: 1715-1717
- Interleaved-contact electroabsorption modulator using doping-selective electrodes with 25° C to 95° C operating range IEEE Photo. Tech. Lett. 1993; 5: 181-183
- Femtosecond-pulse distortion in quantum wells Phys. Rev. B 1993; 48: 902-905
- Novel analog self-electrooptic-effect devices IEEE J. of Quantum Electronics 1993; 29: 678-698
- Monolithic Integration of GaAs/AlGaAs Multiple Quantum Well Modulators and Silicon Metal-Oxide-Semiconductor Transistors 1993
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THZ PULSES FROM THE CREATION OF POLARIZED ELECTRON-HOLE PAIRS IN BIASED QUANTUM-WELLS
APPLIED PHYSICS LETTERS
1992; 61 (17): 2009-2011
View details for Web of Science ID A1992JV04100004
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SIMULTANEOUS MEASUREMENTS OF ELECTRON AND HOLE SWEEP-OUT FROM QUANTUM-WELLS AND MODELING OF PHOTOINDUCED FIELD SCREENING DYNAMICS
IEEE JOURNAL OF QUANTUM ELECTRONICS
1992; 28 (10): 2486-2497
View details for Web of Science ID A1992JQ97500054
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SIMULTANEOUS MEASUREMENT OF ELECTRON AND HOLE ESCAPE TIMES FROM BIASED SINGLE QUANTUM-WELLS
APPLIED PHYSICS LETTERS
1992; 61 (4): 426-428
View details for Web of Science ID A1992JE82100019
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LOGIC SELF-ELECTROOPTIC EFFECT DEVICES - QUANTUM-WELL OPTOELECTRONIC MULTIPORT LOGIC GATES, MULTIPLEXERS, DEMULTIPLEXERS, AND SHIFT REGISTERS
IEEE JOURNAL OF QUANTUM ELECTRONICS
1992; 28 (6): 1539-1553
View details for Web of Science ID A1992HU74200019
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COHERENT SUBMILLIMETER-WAVE EMISSION FROM CHARGE OSCILLATIONS IN A DOUBLE-WELL POTENTIAL
PHYSICAL REVIEW LETTERS
1992; 68 (14): 2216-2219
View details for Web of Science ID A1992HM44000028
- Coherent submillimeter- wave emission from charge oscillations in a double-well potential Phys. Rev. Lett. 1992; 68: 2216-2219
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FREE-SPACE PHOTONICS IN SWITCHING
AT&T TECHNICAL JOURNAL
1992; 71 (1): 84-92
View details for Web of Science ID A1992HR49800010
- Optical investigation of Bloch oscillations in a semiconductor superlattice Physical Review B 1992; 46: 7252-7255
- Passively mode-locked Nd:YLF and Nd:YAG Lasers using a new intracavity antiresonant semiconductor Fabry-Perot edited by Chase, Lloyd, L., Pinto, Albert, A. 1992
- Suppression of the observation of Stark ladders in optical measurements on superlattices by excitonic effects Physical Review B 1992; 46: 15365-15376
- Simultaneous measurements of electron and hole sweep-out from quantum wells and modeling of photoinduced field screening dynamics IEEE J. of Quantum Electronics 1992; 28: 2486-2497
- Photonic Switching Based on Free-Space Digital Optics Trends in Telecommunications 1992; 8: 43-52
- Logic self-electrooptic effect devices: quantum-well optoelectronic multiplexers, and shift registers IEEE J. of Quantum Electronics 1992; 28: 1539-1553
- Free-Space Photonics in Switching AT&T Technical Journal 1992: 84-92
- Simultaneous measurement of electron and hole escape times from biased single quantum wells Appl. Phys. Lett. 1992; 61: 426-428
- Solid-state low-loss intracavity saturable absorber for Nd:YLF lasers: an antiresonant semiconductor Fabry-Perot saturable absorber Optics Letters 1992; 17: 505-507
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OPTIMIZATION OF ABSORPTION IN SYMMETRICAL SELF-ELECTROOPTIC EFFECT DEVICES - A SYSTEMS PERSPECTIVE
IEEE JOURNAL OF QUANTUM ELECTRONICS
1991; 27 (11): 2431-2439
View details for Web of Science ID A1991GN87900009
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QUANTUM-WELL CARRIER SWEEP OUT - RELATION TO ELECTROABSORPTION AND EXCITON SATURATION
IEEE JOURNAL OF QUANTUM ELECTRONICS
1991; 27 (10): 2281-2295
View details for Web of Science ID A1991GM52100007
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EXCITONIC EFFECTS IN COUPLED QUANTUM-WELLS
PHYSICAL REVIEW B
1991; 44 (12): 6231-6242
View details for Web of Science ID A1991GH55300026
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FAST ESCAPE OF PHOTOCREATED CARRIERS OUT OF SHALLOW QUANTUM-WELLS
APPLIED PHYSICS LETTERS
1991; 59 (1): 66-68
View details for Web of Science ID A1991FU34400023
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EXCITON GREENS-FUNCTION APPROACH TO OPTICAL-ABSORPTION IN A QUANTUM-WELL WITH AN APPLIED ELECTRIC-FIELD
PHYSICAL REVIEW B
1991; 43 (2): 1500-1509
View details for Web of Science ID A1991ET21800024
- Low Field Electroabsorption and Self-Biased Self-Electrooptics Effect Device Using Slightly Asymmetric Coupled Quantum Wells 1991
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OPTICAL-DETECTION OF RESONANT TUNNELING - MEASUREMENT OF TUNNELING TIMES AND RESONANT FIELDS
NATO ADVANCED RESEARCH WORKSHOP ON RESONANT TUNNELING IN SEMICONDUCTORS : PHYSICS AND APPLICATIONS
PLENUM PRESS DIV PLENUM PUBLISHING CORP. 1991: 331–339
View details for Web of Science ID A1991BV16S00031
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CARRIER SWEEP-OUT FROM QUANTUM-WELLS IN AN ELECTRIC-FIELD
4TH TOPICAL MEETING ON PICOSECOND ELECTRONICS AND OPTOELECTRONICS
OPTICAL SOC AMERICA. 1991: 210–213
View details for Web of Science ID A1991BW69Y00041
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INTEGRATED SEED PHOTONIC SWITCHING NODES, MULTIPLEXERS, DEMULTIPLEXERS, AND SHIFT REGISTERS
INTERNATIONAL TOPICAL MEETING ON PHOTONIC SWITCHING
OPTICAL SOC AMERICA. 1991: 60–66
View details for Web of Science ID A1991BX14S00013
- Huygen's wave propagation principle corrected Optics Letters 1991; 16: 1370-1372
- Quantum well carrier sweep out: relation to electroabsorption and exciton saturation IEEE J. of Quantum Electronics 1991; 27: 2281-2295
- Excitonic effects in coupled quantum wells Physical Review B 1991; 44: 6231-6242
- Optical Detection of Resonant Tunneling: Measurement of Tunneling Times and Resonant Fields in Resonant Tunneling in Semiconductors edited by Chang et al., L., L. Plenum Press, New York. 1991: 331–339
- Optimization of Absorption in Symmetric Self-Electrooptic Effect Devices: A Systems Perspective IEEE J. of Quantum Electronics 1991; 27: 2431-2439
- Carrier Sweep-Out from Quantum Wells in an Electric Field 1991
- Fast escape of photocreated carriers out of shallow quantum wells Appl. Phys. Lett. 1991; 59: 66-68
- Exciton Green's-function approach to optical absorption in a quantum well with an applied electric field Physical Review B 1991; 43: 1500-1509
- Electroabsorption in II-VI Multiple Quantum Wells Appl. Phys. Lett. 1991; 58: 334-336
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EXCITON SATURATION IN ELECTRICALLY BIASED QUANTUM-WELLS
APPLIED PHYSICS LETTERS
1990; 57 (22): 2315-2317
View details for Web of Science ID A1990EK41100012
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33-PS OPTICAL SWITCHING OF SYMMETRICAL SELF-ELECTRO-OPTIC EFFECT DEVICES
APPLIED PHYSICS LETTERS
1990; 57 (18): 1843-1845
View details for Web of Science ID A1990EF48900003
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LOW-ENERGY ULTRAFAST FIBER SOLITON LOGIC GATES
OPTICS LETTERS
1990; 15 (16): 909-911
Abstract
We have reduced the switching energy for an all-optical soliton dragging NOR gate to 5.8 pJ by using a two-fiber configuration and optimizing the fiber and laser parameters. The cascadable NOR gate has a fanout of six, restores both the logic level and timing, and can operate at bit rates of up to 0.2 THz. In addition, we show that soliton dragging can be represented as a generalized exclusive-or module with high functionality. Two such modules can be interconnected as NOR and AND gates or broadcast and routing switches.
View details for Web of Science ID A1990DW76800011
View details for PubMedID 19770950
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OPTICAL-DETECTION OF RESONANT TUNNELING OF ELECTRONS IN QUANTUM-WELLS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
1990; 5 (6): 549-556
View details for Web of Science ID A1990DH75100015
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PHOTOCURRENT SATURATION IN SHORT-PERIOD SUPERLATTICE MODULATORS
ELECTRONICS LETTERS
1990; 26 (11): 736-737
View details for Web of Science ID A1990DH57800034
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OPTICAL LOGIC USING ELECTRICALLY CONNECTED QUANTUM-WELL PIN DIODE MODULATORS AND DETECTORS
TOPICAL MEETING ON OPTICAL COMPUTING
OPTICAL SOC AMER. 1990: 2153–63
Abstract
We present new optoelectronic logic devices or circuits consisting of electrically connected quantum well PIN diodes capable of implementing any boolean logic function. One class of circuits uses single beams to represent the logic levels and compares their intensities to a locally generated reference signal. A second class of circuits routes signals as differential pairs. The connections of diodes in these circuits resemble the transistor connections in NMOS and CMOS logic families. We demonstrate simple optical programmable logic arrays (e.g., E = AB + CD) using both of these classes of circuits.
View details for Web of Science ID A1990DC61800023
View details for PubMedID 20563144
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ULTRAFAST NONLINEAR OPTICAL EFFECTS IN BIASED SEMICONDUCTOR QUANTUM-WELLS
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
1990; 159 (1): 11-28
View details for Web of Science ID A1990DN77400001
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QUANTUM-WELL OPTICAL TRISTATE DEVICES
APPLIED OPTICS
1990; 29 (8): 1157-1160
Abstract
We demonstrate quantum well tri-state logic devices for possible use in optical bus architectures. These optical devices are analogous to the tri-state devices often used in electronic buses, where each device can be actively on, actively off, or disabled with at most one device on the bus active at a time. We show two methods of generating these tri-state data, one using tri-state quantum well modulators and one using optical tri-state self-electrooptic effect devices, and we demonstrate a simple optical bus consisting of two such devices. Finally, we comment on the limitations on the number of devices that can be connected to a bus of this type.
View details for Web of Science ID A1990CU29200019
View details for PubMedID 20562974
- 33 ps optical switching of symmetric self-electro-optic effect devices Applied Physics Letters 1990; 57: 1843-1845
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ULTRAFAST STUDIES OF RESONANT AND NONRESONANT ELECTRON AND HOLE TUNNELING IN QUANTUM-WELL STRUCTURES
7TH INTERNATIONAL CONF ON ULTRAFAST PHENOMENA
SPRINGER-VERLAG BERLIN. 1990: 222–226
View details for Web of Science ID A1990BS05F00067
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ULTRAFAST STUDIES OF ELECTRON AND HOLE TUNNELING IN QUANTUM-WELL STRUCTURES
20TH INTERNATIONAL CONF ON THE PHYSICS OF SEMICONDUCTORS
WORLD SCIENTIFIC PUBL CO PTE LTD. 1990: 1222–1225
View details for Web of Science ID A1990BS85G00274
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HOLE TUNNELING IN GAAS/ALGAAS HETEROSTRUCTURES - COHERENT VS INCOHERENT RESONANT TUNNELING
CONF ON QUANTUM-WELL AND SUPERLATTICE PHYSICS 3
SPIE - INT SOC OPTICAL ENGINEERING. 1990: 35–44
View details for Web of Science ID A1990BS13V00004
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ULTRAFAST ALL-OPTICAL FIBER SOLITON LOGIC GATES
7TH INTERNATIONAL CONF ON ULTRAFAST PHENOMENA
SPRINGER-VERLAG BERLIN. 1990: 174–178
View details for Web of Science ID A1990BS05F00054
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EXCITONS IN RESONANTLY COUPLED QUANTUM-WELLS
CONF ON QUANTUM-WELL AND SUPERLATTICE PHYSICS 3
SPIE - INT SOC OPTICAL ENGINEERING. 1990: 164–174
View details for Web of Science ID A1990BS13V00016
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HOW FAST IS EXCITONIC ELECTROABSORPTION
OPTICS LETTERS
1990; 15 (1): 60-62
Abstract
Many semiconductor light modulators rely on changes in excitonic absorption induced by electric fields. We study their temporal response in the framework of a one-dimensional model, for which we solve exactly the timedependent Schrödinger equation. For a homogeneously broadened system, the electroabsorption response time is found to be simply the inverse of the (field-induced) exciton linewidth, which can be as short as 50 fsec.
View details for Web of Science ID A1990CH36900021
View details for PubMedID 19759711
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PROSPECTS FOR THZ QUANTUM-WELL OPTOELECTRONICS
CONF ON NONLINEAR OPTICAL MATERIALS AND DEVICES FOR PHOTONIC SWITCHING
SPIE - INT SOC OPTICAL ENGINEERING. 1990: 53–62
View details for Web of Science ID A1990BR23X00006
- Prospects for THz quantum well optoelectronics 1990
- Device requirements for digital optical processing Digital Optical Computing edited by Athale, R., A. SPIE Critical Reviews of Optical Science and Technology. 1990: 68–76
- Comment on 'Optical bistability in self-electro-optic effect devices with asymmetric quantum wells' and on 'Novel configuration of self-electro-optic effect device based on asymmetric quantum wells' Applied Physics Letters 1990; 57: 1363-1365
- Low-Energy ultrafast fiber soliton logic gates Optics Letters 1990; 90: 909-911
- Observation of Room-Temperature Blue Shift and Bistability in a Strained InGaAs-GaAs (111) Self-Electro-Optic Effect Device Applied Physics Letters 1990; 56: 715-717
- Ultrafast Nonlinear Optical Effects in Biased Semiconductor Quantum Wells phys. stat. sol. (b) 1990; 159: 11
- Quantum Well Devices for Optics in Digital Systems 1990
- Quantum well optical tri-state devices Applied Optics 1990; 29: 1157-1160
- Quantum-well self-electro-optic effect devices Optical and Quantum Electronics 1990; 22: S61-S98
- Optoelectronic applications of quantum wells Optics & Photonics News 1990; 1 (2): 7-15
- Nonlinear Optical Properties of GaAs/(AlGa)As Multiple Quantum Well Structures under Quasistationary High Excitation Conditions physica status solidi (b) 1990; 159: 173-180
- Excitons in Resonantly Coupled Quantum Wells SPIE 1283 Quantum-Well and Superlattice Physics III 1990: 164-174
- Excitons in resonant coupling of quantum wells Physical Review B 1990; 42: 1841-1844
- Exciton saturation in electrically biased quantum wells Applied Physics Letters 1990; 57: 2315-2317
- Effect of collisions and relaxation on coherent resonant tunneling: Hole tunneling in GaAs/Al x Ga 1-x As double- quantum-well structures Physical Review B 1990; 11 (42): 7065-7068
- Quantum Well Optoelectronic Switching Devices International J. of High Speed Electronics 1990; 1: 19-46
- Optical logic using electrically connected quantum well PIN diode modulators and detectors Applied Optics 1990; 29: 2153-2163
- How fast is excitonic electroabsorption? Optics Letters 1990; 15: 60-62
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THE EXCITONIC OPTICAL STARK-EFFECT IN SEMICONDUCTOR QUANTUM WELLS PROBED WITH FEMTOSECOND OPTICAL PULSES
JOURNAL OF LUMINESCENCE
1989; 44 (4-6): 233-246
View details for Web of Science ID A1989CK47800004
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FEMTOSECOND EXCITONIC OPTOELECTRONICS
IEEE JOURNAL OF QUANTUM ELECTRONICS
1989; 25 (12): 2586-2595
View details for Web of Science ID A1989CG62600024
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GAAS-ALGAAS MULTIQUANTUM WELL REFLECTION MODULATORS GROWN ON GAAS AND SILICON SUBSTRATES
IEEE PHOTONICS TECHNOLOGY LETTERS
1989; 1 (10): 304-306
View details for Web of Science ID A1989AQ89100008
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MULTISTATE SELF-ELECTROOPTIC EFFECT DEVICES
IEEE JOURNAL OF QUANTUM ELECTRONICS
1989; 25 (8): 1921-1927
View details for Web of Science ID A1989AH90200025
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SYMMETRIC SELF-ELECTROOPTIC EFFECT DEVICE - OPTICAL SET-RESET LATCH, DIFFERENTIAL LOGIC GATE, AND DIFFERENTIAL MODULATOR DETECTOR
IEEE JOURNAL OF QUANTUM ELECTRONICS
1989; 25 (8): 1928-1936
View details for Web of Science ID A1989AH90200026
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ROOM-TEMPERATURE ELECTROABSORPTION AND SWITCHING IN A GAAS/ALGAAS SUPERLATTICE
APPLIED PHYSICS LETTERS
1989; 55 (4): 340-342
View details for Web of Science ID A1989AG24200006
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RESONANTLY ENHANCED ELECTRON-TUNNELING RATES IN QUANTUM WELLS
PHYSICAL REVIEW LETTERS
1989; 63 (4): 438-441
View details for Web of Science ID A1989AG04200026
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5.5 GHZ MULTIPLE QUANTUM WELL REFLECTION MODULATOR
ELECTRONICS LETTERS
1989; 25 (9): 558-560
View details for Web of Science ID A1989U502400002
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FEMTOSECOND AC STARK-EFFECT IN SEMICONDUCTOR QUANTUM WELLS - EXTREME LOW-INTENSITY AND HIGH-INTENSITY LIMITS
PHYSICAL REVIEW LETTERS
1989; 62 (10): 1189-1192
View details for Web of Science ID A1989T487800032
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LINEAR AND NONLINEAR OPTICAL-PROPERTIES OF SEMICONDUCTOR QUANTUM WELLS
ADVANCES IN PHYSICS
1989; 38 (2): 89-188
View details for Web of Science ID A1989AA97200001
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HIGH-SPEED ABSORPTION RECOVERY IN QUANTUM WELL DIODES BY DIFFUSIVE ELECTRICAL-CONDUCTION
APPLIED PHYSICS LETTERS
1989; 54 (8): 748-750
View details for Web of Science ID A1989T266700024
- Femtosecond ac Stark Effect in Semiconductor Quantum Wells: Extreme Low- and High-Intensity Limits Phys. Rev. Lett. 1989; 62: 1189-1192
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NONALLOYED AL OHMIC CONTACT TO GAAS FOR GAAS/SI INTERCONNECT COMPATIBILITY
1989 INTERNATIONAL ELECTRON DEVICES MEETING
I E E E, ELECTRON DEVICES SOC & RELIABILITY GROUP. 1989: 409–410
View details for Web of Science ID A1989BQ39F00094
- GaAs-AlGaAs Multiquantum Well Reflection Modulators Grown on GaAs and Silicon Substrates IEEE Photonics Tech. Lett. 1989; 1: 304-306
- Linear and nonlinear optical properties of semiconductor quantum wells Adv. Phys. 1989; 38: 89-188
- Femtosecond Excitonic Optoelectronics IEEE J. of Quantum Electronics 1989; 24: 2586-2595
- Room-temperature electroabsorption and switching in a GaAs/AlGaAs superlattice Appl. Phys. Lett. 1989; 55: 340-342
- High-speed absorption recovery in quantum well diodes by diffusive electrical conduction Appl. Phys. Lett. 1989; 54: 748-750
- Field-effect transistor self-electrooptic effect device: integrated photodiode, quantum well modulator and transistor IEEE Photonics Tech. Lett. 1989; 1: 61-64
- Physics and applications of quantum wells in optics 1989
- Digital Optics 1989
- Batch-Fabricated Symmetric Self-Electro-Optic Effect Devices edited by Midwinter, J., E., Hinton, H., S. 1989
- The Excitonic Optical Stark Effect in Semiconductor Quantum Wells Probed With Femtosecond Optical Pulses Journal of Luminescence 1989; 44: 233-246
- Symmetric Self-Electrooptic Effect Device: Optical Set-Reset Latch, Differential Logic Gate, and Differential Modulator/Detector IEEE J. of Quantum Electronics 1989; 25: 1928-1936
- Optics for low-energy communication inside digital processors: quantum detectors, sources, and modulators as efficient impedance converters Optics Letters 1989; 14: 146-148
- Optical detection of resonant tunneling of electrons in quantum wells Semiconductor Sci. Technology 1989; 5: 549-556
- Multistate Self-Electrooptic Effect Devices IEEE J. of Quantum Electronics 1989; 25: 1921-1927
- Direct measurement of resonant and nonresonant tunneling times in asymmetric coupled quantum wells Phys. Rev. B. 1989; 40: 3028-3031
- 5.5 GHz Multiple Quantum Well Reflection Modulator Electronics Lett. 1989; 25: 558-560
- Energy scaling and subnanosecond switching of symmetric self-electrooptic effect devices IEEE Photonics Tech. Lett. 1989; 1: 129-131
- Resonantly Enhanced Electron Tunneling Rates in Quantum Wells Phys. Rev. Lett. 1989; 63: 438-441
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MODULATION OF ABSORPTION IN FIELD-EFFECT QUANTUM WELL STRUCTURES
IEEE JOURNAL OF QUANTUM ELECTRONICS
1988; 24 (8): 1664-1676
View details for Web of Science ID A1988Q038500025
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FREE CARRIER AND MANY-BODY EFFECTS IN ABSORPTION-SPECTRA OF MODULATION-DOPED QUANTUM WELLS
IEEE JOURNAL OF QUANTUM ELECTRONICS
1988; 24 (8): 1677-1689
View details for Web of Science ID A1988Q038500026
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ELECTROABSORPTION OF HIGHLY CONFINED SYSTEMS - THEORY OF THE QUANTUM-CONFINED FRANZ-KELDYSH EFFECT IN SEMICONDUCTOR QUANTUM WIRES AND DOTS
APPLIED PHYSICS LETTERS
1988; 52 (25): 2154-2156
View details for Web of Science ID A1988N875400020
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SYMMETRIC SELF-ELECTRO-OPTIC EFFECT DEVICE - OPTICAL SET-RESET LATCH
APPLIED PHYSICS LETTERS
1988; 52 (17): 1419-1421
View details for Web of Science ID A1988N071300018
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SPATIAL LIGHT-MODULATOR AND OPTICAL-DYNAMIC MEMORY USING A 6X6 ARRAY OF SELF-ELECTRO-OPTIC-EFFECT DEVICES
OPTICS LETTERS
1988; 13 (4): 297-299
Abstract
Using a 6 X 6 array of integrated quantum-well self-electro-optic-effect devices, we demonstrate an optically addressed spatial light modulator able to convert a visible, incoherent image into coherent infrared (IR) light. Depending on the IR wavelength used, the output is either a positive, binary-thresholded version of the input (bistable mode) or its linear, negative (self-linearized) mode. This device can also function as a dynamic bistable memory that can retain its internal state without power for times as long as 30 sec.
View details for Web of Science ID A1988M704700014
View details for PubMedID 19745878
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SELF-ELECTRO-OPTIC EFFECT DEVICE AND MODULATION CONVERTER WITH INGAAS/INP MULTIPLE QUANTUM WELLS
APPLIED PHYSICS LETTERS
1988; 52 (1): 51-53
View details for Web of Science ID A1988L504200018
- Free carrier and many-body effects in absorption spectra of modulation-doped quantum wells IEEE J. Quantum Electron. 1988; 24: 1677-1689
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ELECTRON-HOLE CORRELATION SINGULARITY IN OPTICAL-SPECTRA OF MODULATION DOPED GAAS-ALGAAS QUANTUM WELLS
SUPERLATTICES AND MICROSTRUCTURES
1988; 4 (3): 359-361
View details for Web of Science ID A1988P031400022
- Properties of the electron-hole plasma in GaAs/GaAlAs multiple quantum wells edited by Zawadski, W. 1988
- Optical Switching Devices: Some Basic Concepts, Optical Computing edited by Wherrett, B., S., Tooley, F., A. P. 1988
- Modulation of absorption in field-effect quantum well structures IEEE J. Quantum Electron. 1988; 24: 1664-1676
- Gain measurement and band-gap renormalization in GaAs/Alx Ga1-xAs multiple-quantum-well structures Phys. Rev. B 1988; 38: 12748-12751
- Photo-electronic optical nonlinearities in three - and quasi two - dimensional semiconductors, Nonlinear Optical Materials 1988
- Integrated quantum well modulator, field effect transistor, and optical detector 1988
- Electric field dependence of optical properties of semiconductor quantum wells: physics and applications Nonlinear Optical Properties of Semiconductors edited by Haug, H. Academic Press, San Diego. 1988: 325–359
- Nonlinear Optical Properties of Semiconductor Quantum Wells Nonlinear Optical Properties of Semiconductors edited by Haug, H. Academic Press, San Diego. 1988: 83–120
- Symmetric self-electro-optic effect device: Optical set-reset latch Appl. Phys. Lett. 1988; 52: 1419-1421
- Spatial light modulator and optical dynamic memory using a 6 x 6 array of self-electro-optic-effect devices Optics Letters 1988; 13: 297-299
- Optical bistability in self-electro-optic effect devices with asymmetric quantum wells Appl. Phys. Lett. 1988; 54: 202-204
- Electron-hole correlation singularity in optical spectra of modulation doped GaAs-AlGaAs quantum wells Superlattices and Microstructures 1988; 4: 359-361
- Electroabsorption of highly confined systems: Theory of the quantum-confined Franz-Keldysh effect in semiconductor quantum wires and dots Appl. Phys. Lett. 1988; 52: 2154-2156
- All-optical regenerator Electronics Lett. 1988; 4: 848-850
- Quantum Well Electroabsorptive Devices: Physics and Applications, Optical Computing edited by Wherrett, B., S., Tooley, F., A. P. 1988
- Integrated Quantum Well Switching Devices Optical Switching in Low Dimensional Systems Plenum Press, New York and London. 1988: 1–8
- Self-electrooptic effect device and modulation converter with InGaAs/InP multiple quantum wells Appl. Phys. Lett. 1988; 52: 51-53
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ABSORPTION-SPECTROSCOPY OF THE CONTINUOUS TRANSITION FROM LOW TO HIGH ELECTRON-DENSITY IN A SINGLE MODULATION-DOPED INGAAS QUANTUM-WELL
PHYSICAL REVIEW LETTERS
1987; 59 (12): 1357-1360
View details for Web of Science ID A1987K013800025
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GENERATION OF ULTRASHORT ELECTRICAL PULSES THROUGH SCREENING BY VIRTUAL POPULATIONS IN BIASED QUANTUM-WELLS
PHYSICAL REVIEW LETTERS
1987; 59 (9): 1018-1021
View details for Web of Science ID A1987J763400019
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HIGH-FREQUENCY INGAAS/INP MULTIPLE-QUANTUM-WELL BURIED-MESA ELECTROABSORPTION OPTICAL MODULATOR
ELECTRONICS LETTERS
1987; 23 (12): 621-622
View details for Web of Science ID A1987H744300010
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THEORY OF THE LINEAR AND NONLINEAR OPTICAL-PROPERTIES OF SEMICONDUCTOR MICROCRYSTALLITES
PHYSICAL REVIEW B
1987; 35 (15): 8113-8125
View details for Web of Science ID A1987H517300040
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MULTIPLE QUANTUM-WELL REFLECTION MODULATOR
APPLIED PHYSICS LETTERS
1987; 50 (17): 1119-1121
View details for Web of Science ID A1987G970700001
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ELECTROABSORPTION IN GAAS/ALGAAS COUPLED QUANTUM-WELL WAVE-GUIDES
APPLIED PHYSICS LETTERS
1987; 50 (16): 1098-1100
View details for Web of Science ID A1987G876500025
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QUANTUM-CONFINED STARK-EFFECT IN INGAAS INP QUANTUM-WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
APPLIED PHYSICS LETTERS
1987; 50 (15): 1010-1012
View details for Web of Science ID A1987G780000022
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QUADRATIC ELECTROOPTIC EFFECT DUE TO THE QUANTUM-CONFINED STARK-EFFECT IN QUANTUM-WELLS
APPLIED PHYSICS LETTERS
1987; 50 (13): 842-844
View details for Web of Science ID A1987G547800021
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OPTICAL READING OF FIELD-EFFECT TRANSISTORS BY PHASE-SPACE ABSORPTION QUENCHING IN A SINGLE INGAAS QUANTUM-WELL CONDUCTING CHANNEL
APPLIED PHYSICS LETTERS
1987; 50 (10): 585-587
View details for Web of Science ID A1987G640300013
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LOW-VOLTAGE MODULATOR AND SELF-BIASED SELF-ELECTRO-OPTIC-EFFECT DEVICE
ELECTRONICS LETTERS
1987; 23 (2): 75-77
View details for Web of Science ID A1987F878100012
- Low Voltage Modulator and Self-Biased Self-Electro-Optic Effect Device Electronics Lett. 1987; 23: 75-77
- High-Frequency InGaAs/InP Multiple-Quantum-Well Buried-Mesa Electroabsorption Optical Modulator Electronics Letters 1987; 23: 621-622
- Electroabsorption in GaAs/AlGaAs Coupled Quantum Well Waveguides Appl. Phys. Lett. 1987; 50: 1098-1100
- Theory of the Linear and Nonlinear Optical Properties of Semiconductor Microcrystallites Phys. Rev. B 1987; 35: 8113-8125
- Optical Reading of Field-Effect Transistors by Phase-Space Absorption Quenching in a Single InGaAs Quantum Well Conducting Channel Appl. Phys. Lett. 1987; 50: 585-587
- Electric Field Dependence of Optical Absorption in Quantum Well Structures: Physics and Applications,Quantum Well and Superlattice Physics 1987
- Quantum-Confined Stark Effect in InGaAs/InP Quantum Wells Grown by Organometallic Vapor Phase Epitaxy Appl. Phys. Lett. 1987; 50: 1010-1012
- Quantum Wells for Optical Information Processing Opt. Eng. 1987; 26: 368-372
- Generation of Ultrashort Electrical Pulses through Screening by Virtual Populations in Biased Quantum Wells Phys. Rev. Lett. 1987; 59: 1018-1021
- Absorption Spectroscopy of the Continuous Transition from Low to High Electron Density in a Single Modulation Doped InGaAs Quantum Well Phys. Rev. Lett. 1987; 59: 1357-1360
- Quadratic Electro-Optic Effect due to the Quantum-Confined Stark Effect in Quantum Wells Appl. Phys. Lett. 1987; 50: 842-844
- Multiple Quantum Well Reflection Modulator Appl. Phys. Lett. 1987; 50: 1119-1121
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INTEGRATED QUANTUM-WELL SELF-ELECTRO-OPTIC EFFECT DEVICE - 2X2 ARRAY OF OPTICALLY BISTABLE SWITCHES
APPLIED PHYSICS LETTERS
1986; 49 (13): 821-823
View details for Web of Science ID A1986E172500025
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ELECTRIC-FIELD DEPENDENCE OF LINEAR OPTICAL-PROPERTIES IN QUANTUM-WELL STRUCTURES - WAVE-GUIDE ELECTROABSORPTION AND SUM-RULES
IEEE JOURNAL OF QUANTUM ELECTRONICS
1986; 22 (9): 1816-1830
View details for Web of Science ID A1986D808100032
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MECHANISM FOR ENHANCED OPTICAL NONLINEARITIES AND BISTABILITY BY COMBINED DIELECTRIC ELECTRONIC CONFINEMENT IN SEMICONDUCTOR MICROCRYSTALLITES
OPTICS LETTERS
1986; 11 (8): 522-524
Abstract
We propose a new type of mechanism for enhanced optical nonlinearities and intrinsic optical bistability that relies on the combination of intrinsic feedback due to local field effects and excitonic resonances in semiconductor crystallites. These effects will be further enhanced by quantum confinement in small crystallites.
View details for Web of Science ID A1986D412500013
View details for PubMedID 19738676
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RELATION BETWEEN ELECTROABSORPTION IN BULK SEMICONDUCTORS AND IN QUANTUM-WELLS - THE QUANTUM-CONFINED FRANZ-KELDYSH EFFECT
PHYSICAL REVIEW B
1986; 33 (10): 6976-6982
View details for Web of Science ID A1986C337800047
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SUBPICOSECOND EXCITONIC ELECTROABSORPTION IN ROOM-TEMPERATURE QUANTUM-WELLS
APPLIED PHYSICS LETTERS
1986; 48 (13): 864-866
View details for Web of Science ID A1986A639400017
- Novel Optical Modulators and Bistable Devices Using the Self-Electro-Optic Effect in Semiconductor Quantum Wells Surface Science 1986; 174: 221-232
- Relation Between Electroabsorption in Bulk Semiconductors and in Quantum Wells: The Quantum-Confined Franz-Keldysh Effect Phys. Rev. B 1986; 33: 6976-6982
- Electric Field Dependence of Linear Optical Properties in Quantum Well Structures: Waveguide Electroabsorption and Sum Rules IEEE J. Quantum Electron. 1986; QE-22: 1816-1830
- Electric Field Dependence of Optical Properties of Quantum Well Structures, Electro-optic and Photorefractive Materials edited by Gunter, P. 1986
- Subpicosecond Excitonic Electroabsorption in Room-Temperature Quantum Wells Appl. Phys. Lett. 1986; 48: 864-866
- Nonlinear Spectroscopy of InGaAs/InAlAs Multiple Quantum Well Structures Appl. Phys. Lett. 1986; 49: 531-533
- Mechanism for Enhanced Optical Nonlinearities and Bistability by Combined Dielectric-Electronic Confinement in Semiconductor Microcrystallites Optics Lett. 1986; 11: 522-524
- Integrated Quantum Well Self-Electro-Optic Effect Device: 2x2 Array of Optically Bistable Switches Appl. Phys. Lett. 1986; 49: 821-823
- Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum Wells Phys. Rev. Lett. 1986; 56: 1191-1193
- Attenuation of Cutoff Modes and Leaky Modes of Dielectric Slab Structures IEEE J. Quantum Electron 1986; QE-22: 310-324
- Strong Polarization-Sensitive Electroabsorption in GaAs/AlGaAs Quantum Well Waveguides Appl. Phys. Lett. 1985; 47: 1148-1150
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HIGHLY ANISOTROPIC OPTICAL-PROPERTIES OF SINGLE QUANTUM WELL WAVE-GUIDES
APPLIED PHYSICS LETTERS
1985; 47 (7): 664-667
View details for Web of Science ID A1985ARB2700007
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FAST NONLINEAR OPTICAL-RESPONSE FROM PROTON-BOMBARDED MULTIPLE QUANTUM WELL STRUCTURES
APPLIED PHYSICS LETTERS
1985; 46 (8): 701-703
View details for Web of Science ID A1985AFC3000001
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THE QUANTUM WELL SELF-ELECTROOPTIC EFFECT DEVICE - OPTOELECTRONIC BISTABILITY AND OSCILLATION, AND SELF-LINEARIZED MODULATION
IEEE JOURNAL OF QUANTUM ELECTRONICS
1985; 21 (9): 1462-1476
View details for Web of Science ID A1985ATR5500027
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FEMTOSECOND DYNAMICS OF RESONANTLY EXCITED EXCITONS IN ROOM-TEMPERATURE GAAS QUANTUM WELLS
PHYSICAL REVIEW LETTERS
1985; 54 (12): 1306-1309
View details for Web of Science ID A1985ADW6700026
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ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES
PHYSICAL REVIEW B
1985; 32 (2): 1043-1060
View details for Web of Science ID A1985AMH6100060
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STRONG POLARIZATION-SENSITIVE ELECTROABSORPTION IN GAAS/ALGAAS QUANTUM WELL WAVE-GUIDES
APPLIED PHYSICS LETTERS
1985; 47 (11): 1148-1150
View details for Web of Science ID A1985AUS2200010
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100 PS WAVE-GUIDE MULTIPLE QUANTUM WELL (MQW) OPTICAL MODULATOR WITH 10-1 ON OFF RATIO
ELECTRONICS LETTERS
1985; 21 (16): 693-694
View details for Web of Science ID A1985ART4600021
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ROOM-TEMPERATURE EXCITONIC NONLINEAR-OPTICAL EFFECTS IN SEMICONDUCTOR QUANTUM-WELL STRUCTURES
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
1985; 2 (7): 1155-1173
View details for Web of Science ID A1985AMK6500015
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THEORY OF TRANSIENT EXCITONIC OPTICAL NONLINEARITIES IN SEMICONDUCTOR QUANTUM-WELL STRUCTURES
PHYSICAL REVIEW B
1985; 32 (10): 6601-6609
View details for Web of Science ID A1985ATX8800054
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NONLINEAR OPTICAL-PROPERTIES OF GAAS/GAAIAS MULTIPLE QUANTUM WELL MATERIAL - PHENOMENA AND APPLICATIONS
OPTICAL ENGINEERING
1985; 24 (4): 556-564
View details for Web of Science ID A1985AMN7300003
- Wavelength-Selective Voltage-Tunable Photodetector Made from Multiple Quantum Wells Appl. Phys. Lett. 1985; 47: 190-192
- Nonlinear Optical Properties of GaAs/GaAlAs Multiple Quantum Well Material: Phenomena and Applications. Opt. Eng. 1985; 24: 556-564
- Strong Polarization Sensitive Electroabsorption in GaAs/AlGaAs Quantum Well Waveguides J. Opt. Soc. Am. A 1985; 2: 44
- Room-Temperature Excitonic Nonlinear-Optical Effects in Semiconductor Quantum-Well Structures J. Opt. Soc. Am. B 1985; 2: 1155-1173
- Multiple Quantum Well Optical Nonlinearities: Bistability from Increasing Absorption and the Self Electro-Optic Device Phil. Trans. R. Soc. Lond. A 1985; 313: 239-244
- Mode Locking of Semiconductor Diode Lasers Using Saturable Excitonic Nonlinearities J. Opt. Soc. Am. B 1985; 2: 1228-1236
- 131 ps Optical Modulation in Semiconductor Quantum Wells (MQW's) IEEE J. Quantum Electron. 1985; QE-21: 117-118
- Theory of Transient Excitonic Optical Nonlinearities in Semiconductor Quantum-Well Structures Phys. Rev. B 1985; 32: 6601-6609
- The Quantum Well Self-Electrooptic Effect Device: Optoelectronic Bistability and Oscillation, and Self Linearized Modulation IEEE J. Quantum Electron 1985; QE-21: 1462-1476
- Highly Anisotropic Optical Properties of Single Quantum Well Waveguides Appl. Phys. Lett. 1985; 47: 664-667
- Femtosecond Dynamics of Resonantly Excited Excitons in Room Temperature GaAs Quantum Wells Phys. Rev. Lett. 1985; 54: 1306-1309
- Fast Nonlinear Optical Response from Proton-Bombarded Multiple Quantum Well Structures Appl. Phys. Lett. 1985; 46: 701-703
- 100 ps Waveguide Multiple Quantum Well (MQW) Optical Modulator with 10:1 On/Off Ratio Electronics Lett. 1985; 21: 693-694
- Room-temperature Excitons in 1.6µ band-gap GaInAs/AlInAs Quantum Wells Appl. Phys. Lett. 1985; 46: 619-621
- Physics and Applications of Room Temperature Excitonic Electroabsorption in Quantum Wells J. Opt. Soc. Am. A 1985; 2: 47
- Electric Field Dependence of Optical Absorption near the Bandgap of Quantum Well Structures Phys. Rev. B 1985; 32: 1043-1060
- Room Temperature Excitonic Nonlinear Absorption and Refraction in GaAs/AlGaAs Multiple Quantum Well Structures IEEE J. Quantum Electron. 1984; QE-20: 265-275
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OPTICAL BISTABILITY DUE TO INCREASING ABSORPTION
OPTICS LETTERS
1984; 9 (5): 162-164
Abstract
It is shown theoretically that optical bistability will exist in a material whose optical absorption is more than linearly proportional to the degree to which the material is excited. No cavity or external feedback is required. The underlying principle of this bistability appears to be a generalization of several previous independent discussions of mirrorless bistabilities in specific physical systems. This bistability and associated differential gain are demonstrated experimentally using a thermal nonlinearity in a GaAs/GaAlAs multiple-quantum-well semiconductor. Theory and experiment show good agreement.
View details for Web of Science ID A1984SP80800006
View details for PubMedID 19721530
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OPTICAL-LEVEL SHIFTER AND SELF-LINEARIZED OPTICAL MODULATOR USING A QUANTUM-WELL SELF-ELECTRO-OPTIC EFFECT DEVICE
OPTICS LETTERS
1984; 9 (12): 567-569
Abstract
We demonstrate an optical-level shifter and a modulator whose transmission varies linearly with drive current, both based on a new, negative-feedback mode of operation of the recently discovered quantum-well self-electro-optic effect device. The system is compatible with both laser diodes and low-power semiconductor electronics and is applicable in both analog and digital optical processing. An extension of the system gives inverted, linear modulation of a coherent beam by an incoherent light source.
View details for Web of Science ID A1984TV44300015
View details for PubMedID 19721670
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NOVEL HYBRID OPTICALLY BISTABLE SWITCH - THE QUANTUM WELL SELF-ELECTRO-OPTIC EFFECT DEVICE
APPLIED PHYSICS LETTERS
1984; 45 (1): 13-15
View details for Web of Science ID A1984SX87100006
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ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES
IEEE JOURNAL OF QUANTUM ELECTRONICS
1984; 20 (3): 265-275
View details for Web of Science ID A1984SM30100014
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BAND-EDGE ELECTROABSORPTION IN QUANTUM WELL STRUCTURES - THE QUANTUM-CONFINED STARK-EFFECT
PHYSICAL REVIEW LETTERS
1984; 53 (22): 2173-2176
View details for Web of Science ID A1984TT08800029
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HIGH-SPEED OPTICAL MODULATION WITH GAAS/GAALAS QUANTUM WELLS IN A P-I-N-DIODE STRUCTURE
APPLIED PHYSICS LETTERS
1984; 44 (1): 16-18
View details for Web of Science ID A1984RZ08300007
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PASSIVE-MODE LOCKING OF A SEMICONDUCTOR DIODE-LASER
OPTICS LETTERS
1984; 9 (11): 507-509
Abstract
By using a GaAs/GaAIAs multiple-quantum-well sample as a saturable absorber in an external resonator, we have passively mode locked a GaAs laser to obtain pulses as short as 1.6 psec, the shortest pulses ever observed to our knowledge from a mode-locked diode laser in a regulator pulse train.
View details for Web of Science ID A1984TQ12800012
View details for PubMedID 19721649
- Enhanced Electro-Absorption in GaAs/GaAlAs Multiple Quantum Wells and its Application to Opto-Electronic Devices 1984
- Optical-level Shifter and Self-Linearized Optical Modulator Using a Quantum-Well Self-Electro-Optic Effect Device Optics Lett. 1984; 9: 567-569
- Passive Modelocking of a Semiconductor Diode Laser Optics Lett. 1984; 9: 507-509
- Long Wavelength, Room Temperature Observation of Excitons and 2 Dimensional Electron-hole States in Multiple Quantum Wells (MQWs) 1984
- Femtosecond Dynamics of Nonequilibrium Correlated Electron-Hole Pair Distributions in Room-Temperature GaAs Multiple Quantum Well Structures edited by Auston, D., H., Eisenthal, K., B. 1984
- Optical Logic and the Self Electro-optic Effect Device (SEED) 1984
- Optical Bistability due to Increasing Absorption Optics Lett. 1984; 9: 162-164
- Optical Bistability and Differential Gain Resulting from Absorption Increasing with Excitation J. Opt. Soc. Am. B 1984; 1: 857-864
- Novel Hybrid Optically Bistable Switch: The Quantum Well Self Electro-Optic Effect Device Appl. Phys. Lett. 1984; 45: 13-15
- High-Speed Optical Modulation with GaAs/GaAlAs Quantum Wells in a p-i-n Diode Structure Appl. Phys. Lett. 1984; 44: 16-18
- Femtosecond Dynamics of Nonequilibrium Correlated Electron-Hole Pair Distributions in Room-Temperature GaAs Multiple Quantum Well Structures Ultrafast Phenomena IV 1984: 162-165
- Bandedge Electro-absorption in Quantum Well Structures: The Quantum Confined Stark Effect Phys. Rev. Lett. 1984; 53: 2173-2177
- Nonlinear Optics with a Diode Laser Light Source Optics Lett. 1983; 8: 477-479
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DEGENERATE 4-WAVE MIXING IN ROOM-TEMPERATURE GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES
APPLIED PHYSICS LETTERS
1983; 42 (11): 925-927
View details for Web of Science ID A1983QT20200003
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NON-LINEAR OPTICS WITH A DIODE-LASER LIGHT-SOURCE
OPTICS LETTERS
1983; 8 (9): 477-479
Abstract
We report results of cw degenerate four-wave mixing experiments on room-temperature GaAs-GaAlAs multiple quantum-well material using a commercial semiconductor diode laser as the sole light source. With cw powers of ~3 mW and intensities of ~13 W/cm(2), we observe diffraction efficiencies of ~10(-4), corresponding to an effective nonlinear coefficient of chi(3)~6 x 10(-2) esu.
View details for Web of Science ID A1983RE62000005
View details for PubMedID 19718153
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ELECTRO-ABSORPTION BY STARK-EFFECT ON ROOM-TEMPERATURE EXCITONS IN GAAS/GAALAS MULTIPLE QUANTUM WELL STRUCTURES
APPLIED PHYSICS LETTERS
1983; 42 (10): 864-866
View details for Web of Science ID A1983QP57500009
- Dynamic Nonlinear Optics in Semiconductors: Physics and Applications Laser Focus 1983; 19 (7): 61-68
- Room Temperature Optical Nonlinear Absorption and Refraction in GaAs Multiple Quantum Wells, Optical Bistability 2 edited by Bowden, C., M., Gibbs, H., M., McCall, S., L. 1983
- High-Speed Optical Modulation with GaAs/GaAlAs Quantum Wells in a p-i-n Diode Structure 1983
- Electroabsorption by Stark Effect on Room-Temperature Excitons in GaAs/GaAlAs Multiple Quantum Well Structures Appl. Phys. Lett. 1983; 42: 864-866
- Degenerate Four-Wave Mixing in Room-Temperature GaAs/GaAlAs Multiple Quantum Well Structures Appl. Phys. Lett. 1983; 42: 925-927
- Optical Bistability 1982
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LARGE ROOM-TEMPERATURE OPTICAL NONLINEARITY IN GAAS/GA1-X ALXAS MULTIPLE QUANTUM WELL STRUCTURES
APPLIED PHYSICS LETTERS
1982; 41 (8): 679-681
View details for Web of Science ID A1982PL39400001
- Large Room-Temperature Optical Nonlinearity in GaAs/Ga1-xAlxAs Multiple Quantum Well Structures Appl. Phys. Lett. 1982; 41: 679-681
- Saturation of Band-Tail Optical Absorption in InSb 1982
- Room-Temperature Saturation Characteristics of GaAs-GaAlAs Multiple Quantum Well Structures and of Bulk GaAs Appl. Phys. B 1982; 28: 96-96
- Dynamic Nonlinear Optics in Semiconductors Appl. Phys. B 1982; 28: 92-93
- Bistable Optical Devices: Physics and Operating Characteristics Laser Focus 1982; 18 (4): 79-84
- Optical Bistability, Trends in Physics 1981 1982
- Optical Bistability Laser Focus 1982; 18: 77-78
- Large Nonlinearities in Room-Temperature GaAs Structures J. Opt. Soc. Am. 1982; 72: 1783
- Dynamic Nonlinear Optical Processes in Semiconductors Adv. Phys. 1981; 30: 697-800
- Optical Bistability in Semiconductors IEEE Journal of Quantum Electronics 1981; QE-17: 312-317
- Refractive Fabry-Perot Bistability with Linear Absorption: Theory of Operation and Cavity Optimization IEEE Journal of Quantum Electronics 1981; QE-17: 306-311
- Optical Bistability Optical Bistability and Multistability in the Semiconductor InSb edited by Bowden, C., M., Ciftan, M., Robl, H., R. Plenum. 1981: 115–126
- Degenerate Four-Wave Mixing in InSb at 5K Optics Communications 1980; 32: 478-480
- Optical Bistability and Transphasor Action using Semiconductor Materials 1980
- Computing at the Speed of Light New Scientist 1980; 85
- Time Reversal of Optical Pulses by Four-Wave Mixing Optics Lett. 1980; 5: 300-302
- Optical Bistability and Transphasor Action in Semiconductors 1980
- The Microscopic Mechanism of Third-Order Optical Nonlinearity in InSb Optics Commun. 1980; 35: 221-226
- Effect of Low-Power Nonlinear Refraction on Laser Beam Propagation in InSb Optics Lett. 1979; 4: 331-333
- Optical Bistability and Transistor Action in a Semiconductor Crystal edited by Wherrett, B., S. 1979
- Two Beam Optical Signal Amplification and Bistability in InSb Optics Commun. 1979; 31: 101-104
- Nonlinear Refraction and Absorption in InSb Inst. Phys. Conf. Ser. 1979: 505-508
- Optical Bistability and Signal Amplification in a Semiconductor Crystal. Application of New Low-Power Nonlinear Effects in InSb Appl. Phys. Lett. 1979; 35: 658-660
- Variable Attenuator for Gaussian Laser Beams Applied Optics 1978; 17: 3804-3808
- Nonlinear Optical Effects in InSb with a cw CO Laser Optics Commun 1978; 27: 133-136